APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Dec 1982

Volume 41, Issue 11, pp. 1013-1105

Page 2 of 2 Pages Previous Page | Jump to Page

Transfer doping effects at the organometallic vapor phase epitaxial AlxGa1−xAs‐substrate GaAs interface

Takashi Matsumoto, Pallab K. Bhattacharya, Johan Darmawan, and M. J. Ludowise

Appl. Phys. Lett. 41, 1075 (1982); http://dx.doi.org/10.1063/1.93406 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Electron mobilities in Alx Ga1−xAs (0.1≤x≤0.6) crystals grown by organometallic vapor phase epitaxy on semi‐insulating GaAs:Cr have been measured and analyzed. The mobilities are an order of magnitude higher than theoretical predictions, or those obtained in liquid phase epitaxial Alx Ga1−xAs for x≥0.4. The expected lower mobilities are, however, obtained when measurements are made on the epitaxial layer with the substrate removed. A persistent photoconductivity effect is observed at low temperatures in the layers with substrates. The present results indicate that transfer doping is operative at the epilayer‐substrate heterointerface.
Show PACS
72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Passivation of the dominant deep level (EL2) in GaAs by hydrogen

J. Lagowski, M. Kaminska, J. M. Parsey, H. C. Gatos, and M. Lichtensteiger

Appl. Phys. Lett. 41, 1078 (1982); http://dx.doi.org/10.1063/1.93407 (3 pages) | Cited 68 times

Full Text: | Download PDF

Show Abstract
We showed that hydrogen incorporated into single crystals of GaAs (by exposure of the crystals to hydrogen plasma) renders the major deep donor level (EL2) located at 0.82 eV below the conduction band at room temperature electronically inert. We attribute this passivation process to the interaction of hydrogen with the unsaturated bonds of the antisite AsGa defect (believed to be responsible for EL2) leading to the formation of stable As–H bonds.
Show PACS
78.40.Fy Semiconductors

Field induced tunneling in Hg1−xCdxTe photodiodes

W. W. Anderson

Appl. Phys. Lett. 41, 1080 (1982); http://dx.doi.org/10.1063/1.93372 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Using insulated field plates, we have observed band‐to‐band tunneling and impurity‐to‐band tunneling in ion‐implanted n+‐on‐p Hg1−xCdxTe photodiodes. The latter process results in a field‐plate‐voltage controlled negative resistance region in the forward biased I‐V characteristic. The peak and valley voltages for this excess current process are greater than those observed in Esaki type tunnel diodes.
Show PACS
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Dw Photodiodes; phototransistors; photoresistors

Lateral zone growth and characterization of device quality silicon‐on‐insulator wafers

H. W. Lam, R. F. Pinizzotto, S. D. S. Malhi, and B. L. Vaandrager

Appl. Phys. Lett. 41, 1083 (1982); http://dx.doi.org/10.1063/1.93373 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
A lateral zone melting process has been developed whereby (100) silicon‐on‐insulator wafers can be obtained. Small angle grain boundaries exist extensively in the recrystallized silicon, with a maximum variation in the orientation between adjacent grains of 0.3°. A SiC coating prevents the dusting of carbon from the moving heater from contaminating the silicon film. It has been found that enhanced arsenic diffusion along the small angle grain boundaries in this material is significantly less than that in the grain boundaries in laser‐recrystallized silicon‐on‐insulator material. Furthermore, it was found that the small angle grain boundaries do not significantly affect the carrier mobility, probably because of the relatively low surface trapping state density at the small angle grain boundaries. Complementary‐metal‐oxide‐semiconductor devices fabricated in this material exhibit characteristics that are comparable to those of bulk devices.
Show PACS
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.10.Fq Growth from melts; zone melting and refining
61.72.Mm Grain and twin boundaries

Lattice incorporation of n‐type dopants in GaAs

A. K. Rai, R. S. Bhattacharya, and P. P. Pronko

Appl. Phys. Lett. 41, 1086 (1982); http://dx.doi.org/10.1063/1.93374 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Transmission electron microscopy has been used to investigate precipitates of the n‐type dopants S, Si, Se, and the deep acceptor Cr implanted in GaAs and annealed in the temperature range 800–900 °C. The lowest precipitation was observed for S and Si (4–5%) followed by Se (∼12%). Bulk precipitation was observed for Cr. These results are found to correlate inversely with the percentage substitutionality of S, Si, and Cr measured by the technique of proton induced x‐ray excitation in combination with Rutherford backscattering channeling.
Show PACS
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Characterization of seeded‐lateral epitaxial layer by microprobe reflection high‐energy electron diffraction

M. Ohkura, M. Ichikawa, M. Miyao, and T. Tokuyama

Appl. Phys. Lett. 41, 1089 (1982); http://dx.doi.org/10.1063/1.93375 (2 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The crystallinity and regrowth mechanism of a seeded‐lateral epitaxial layer of Si on a SiO2 substrate is evaluated using a newly developed microprobe reflection high‐energy electron diffraction method. Measurements with a spatial resolution of 0.1 μm reveal that the lateral seeding process actually occurs in the regrowth process and that the seeding area is indispensable to the process, though a seed length of less than 0.5 μm is required.
Show PACS
68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.66.Bi Elemental solids
81.10.Fq Growth from melts; zone melting and refining

Evidence of the role of boron in undoped GaAs grown by liquid encapsulated Czochralski

L. B. Ta, H. M. Hobgood, and R. N. Thomas

Appl. Phys. Lett. 41, 1091 (1982); http://dx.doi.org/10.1063/1.93376 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
We provide experimental evidence of electrical activity correlated with residual boron impurities and native point defects in undoped liquid‐encapsulated Czochralski GaAs crystals. In Ga‐rich samples containing ≥1017 cm−3 boron, an 0.073‐eV acceptor level is observed in which the concentration increases with Ga and B content. An approximately quadratic increase in the concentration of the 0.073‐eV defect acceptor is observed with increasing boron concentration, suggesting that a complex involving boron with an intrinsic defect (VAs, Gai, or GaAs ) is responsible for the observed acceptor behavior. No evidence of electrically active boron or boron complexes was found in semi‐insulating GaAs pulled from stoichiometric or As‐rich melts.
Show PACS
72.80.Ey III-V and II-VI semiconductors
81.10.Fq Growth from melts; zone melting and refining
78.40.Fy Semiconductors
61.50.Nw Crystal stoichiometry

1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger

Appl. Phys. Lett. 41, 1094 (1982); http://dx.doi.org/10.1063/1.93377 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
We report the first successful preparation of current injection GaInAsP/InP double heterostructure lasers operating at 1.3 μm by molecular beam epitaxy. The median threshold current density Jth is 3.5 kA/cm2, while the lowest Jth is 1.8 kA/cm2 for broad‐area Fabry–Perot diodes of 380×200 μm and an active layer thickness of 0.2 μm. The threshold current‐temperature dependence is described very closely by exp (T/T0) with T0 of 70–87 K in the temperature range 10°–65 °C. Elemental As and P (red phosphorus) were used as the primary molecular beam sources for deriving the As2 and P2 beams. In addition, the As and P ovens were equipped with recharge interlock systems. As a result, the growth chamber was always maintained in ultrahigh vacuum condition even during As and P recharge.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

New fabrication process for Josephson tunnel junctions with (niobium nitride, niobium) double‐layered electrodes

Akira Shoji, Fujitoshi Shinoki, Shin Kosaka, Masahiro Aoyagi, and Hisao Hayakawa

Appl. Phys. Lett. 41, 1097 (1982); http://dx.doi.org/10.1063/1.93378 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
All hard Josephson tunnel junctions, whose base and counter electrodes are composed of double‐layered niobium nitride (NbN) and niobium (Nb) films, have been successfully fabricated by isolating a junction sandwich formed on a whole silicon wafer with a reactive ion etching technique. The reactive ion etching technique has been used for patterning both base and counterelectrodes, and self‐aligning definition of junction areas has been performed. The fabricated junctions show good quality single‐particle tunneling characteristics and excellent uniformity in critical currents.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
74.25.-q Properties of superconductors
85.25.-j Superconducting devices

Irradiation‐induced phase transformation in type 304 stainless steel

N. Hayashi and T. Takahashi

Appl. Phys. Lett. 41, 1100 (1982); http://dx.doi.org/10.1063/1.93379 (2 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Conversion electron Mössbauer spectroscopy has been used to study irradiation effects in the near surface region of type 304 stainless steel after 40 keV helium ion bombardment; a ferromagnetic phase in the paramagnetic matrix was observed after the irradiation to 8×1017 ion/cm2 at 200 °C. The amount of ferromagnetic phase was found to increase with increasing helium ion fluence.
Show PACS
76.80.+y Mössbauer effect; other γ-ray spectroscopy
61.80.Jh Ion radiation effects
75.50.Bb Fe and its alloys

Thin‐film CaF2 inorganic electron resist and optical‐read storage medium

T. R. Harrison, P. M. Mankiewich, and A. H. Dayem

Appl. Phys. Lett. 41, 1102 (1982); http://dx.doi.org/10.1063/1.93380 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Polished silicon substrates were e‐gun deposited with 100‐nm films of CaF2 in a molecular beam epitaxy vacuum station. Measurements of this material system reveal a factor of 35 reduction in reflectivity for films exposed to electron irradiation. Exposure is accomplished by simply viewing the desired area using a 3‐kV Auger electron microprobe. It is further reported that this exposed inorganic material can be developed (selectively washed away) in H2O. In addition, both over and under exposures have been observed. Optimum electron exposure dose has been determined to be 0.1–0.2 C/cm2.
Show PACS
81.40.Tv Optical and dielectric properties related to treatment conditions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Fe Electron and positron radiation effects
FREE

Erratum: Oxidant transport during steam oxidation of silicon [Appl. Phys. Lett. 39, 903 (1981)]

J. C. Mikkelsen

Appl. Phys. Lett. 41, 1105 (1982); http://dx.doi.org/10.1063/1.93719 (1 page)

Full Text: | Download PDF

Abstract Unavailable
Show PACS
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
99.10.Cd Errata
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close