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15 Dec 1982

Volume 41, Issue 12, pp. 1111-1156


Phase‐matched light amplification by three‐wave mixing process in a birefringent fiber due to externally applied stress

Masaharu Ohashi, Ken‐ichi Kitayama, Yukinori Ishida, and Naoya Uchida

Appl. Phys. Lett. 41, 1111 (1982); http://dx.doi.org/10.1063/1.93418 (3 pages) | Cited 6 times

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A novel method to achieve phase‐matched light amplification in a birefringent fiber via the three‐wave mixing is proposed by using frequency shift change due to the stress applied to the fiber. It is confirmed that the signal power from a cw laser diode at λ=1.292 μm is amplified by 6.1×103 times in the birefringent fiber pumped with a Q‐switched Nd: yttrium aluminum garnet laser at λ=1.064 μm. This will provide a new fiber‐optic light signal amplifier having a good tolerance for variation of signal wavelengths.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.25.Lc Birefringence
42.81.-i Fiber optics

Catastrophic degradation level of visible and infrared GaAlAs lasers

Kiyohide Wakao, Nobuyuki Takagi, Katsuhito Shima, Kiyoshi Hanamitsu, Ken‐ichi Hori, and Masahito Takusagawa

Appl. Phys. Lett. 41, 1113 (1982); http://dx.doi.org/10.1063/1.93419 (3 pages) | Cited 5 times

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Burn‐off output powers of catastrophic failures have been studied for GaAlAs double heterostructure (DH) lasers with facet coatings in the wavelength range of 750–870 nm. It was found that the burn‐off power density does not depend on the lasing wavelength when the laser is operated under pulsed condition, whereas it decreases slightly as the wavelength becomes shorter under cw condition.
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42.55.Px Semiconductor lasers; laser diodes

Low threshold InGaAsP terrace mass transport laser on semi‐insulating substrate

T. R. Chen, L. C. Chiu, K. L. Yu, U. Koren, A. Hasson, S. Margalit, and A. Yariv

Appl. Phys. Lett. 41, 1115 (1982); http://dx.doi.org/10.1063/1.93420 (3 pages) | Cited 6 times

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Very low threshold InGaAsP terrace lasers on semi‐insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single‐step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ∼675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far‐field patterns and threshold currents as low as 9.5 mA have been obtained.
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42.55.Px Semiconductor lasers; laser diodes

Spatial mode discrimination and control in high‐power single‐mode constricted double‐heterojunction large‐optical‐cavity diode lasers

J. K. Butler and D. Botez

Appl. Phys. Lett. 41, 1118 (1982); http://dx.doi.org/10.1063/1.93421 (3 pages) | Cited 2 times

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Mode discrimination and control in high‐power constricted double‐heterojunction large‐optical‐cavity (CDH‐LOC) lasers are determined by three factors: a sharp lateral variation in radiation confinement factor, a ‘‘built‐in’’ dielectric W guide in the plane of the junction, and the influence of gain‐induced index depressions on the W guide. Excellent far‐field pattern fits are achieved by using the actual geometries and compositions of two high‐power CDH‐LOC structures, and gain‐induced (bulk) index depressions in the −0.02 to −0.03 range. The dependence of mode discrimination on the gain‐induced index depression allows tailoring CDH‐LOC devices for specific spatial mode operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers

Focusing of a 7700‐Å high power phased array semiconductor laser

D. R. Scifres, R. A. Sprague, W. Streifer, and R. D. Burnham

Appl. Phys. Lett. 41, 1121 (1982); http://dx.doi.org/10.1063/1.93422 (3 pages) | Cited 21 times

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A high power (200 mW/facet) phased array semiconductor injection laser consisting of multiple optically coupled 7700‐Å emitters is focused to obtain over 90 mW in a single nearly diffraction limited 2.5‐μm‐diam spot. Focusing is accomplished by imaging the vertical near‐field and the lateral far‐field patterns. Such an optical system functions only when the emitters are mutually coherent, as with this device.
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42.62.-b Laser applications
42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes

Precision measurement of Rayleigh wave velocity perturbation

K. Liang, S. D. Bennett, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 41, 1124 (1982); http://dx.doi.org/10.1063/1.93423 (3 pages) | Cited 11 times

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A 50‐MHz acoustic microscope for imaging Rayleigh wave velocity perturbation over a surface is described. A line scan of a multiple‐thickness indium film deposited on a glass shows that the system has a potential sensitivity of 1 part in 105 change in velocity.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Thermal oxidation of tantalum silicide in O2 and H2O

Krishna C. Saraswat, Ronald S. Nowicki, and John F. Moulder

Appl. Phys. Lett. 41, 1127 (1982); http://dx.doi.org/10.1063/1.93424 (3 pages) | Cited 15 times

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Thermal oxidation of TaSi2 in dry oxygen and steam has been investigated. 0.3‐μm‐thick films of tantalum silicide were deposited by cosputtering on high resistivity 〈111〉 silicon and oxidized silicon wafers. After a crystallization anneal in argon, the films were oxidized in dry O2 or steam at 1000 and 1100 °C. In all cases oxidation was observed. For TaSi2 deposited on Si, only the growth of SiO2 was observed, indicating that the Si diffused through TaSi2 before oxidation, and TaSi2 remained intact. In the case where TaSi2 was deposited on SiO2, it was actively involved in the oxidation process, resulting in the formation of SiO2 and Ta2O5.
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81.65.-b Surface treatments

Structural phase transitions of indium/indium oxide thin‐film composites

A. F. Hebard and S. Nakahara

Appl. Phys. Lett. 41, 1130 (1982); http://dx.doi.org/10.1063/1.93408 (3 pages) | Cited 37 times

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Correlation of resisitivity measurements with transmission electron microscopy analysis reveals that indium/indium oxide thin films, prepared by reactive ion‐beam sputter deposition, undergo pronounced and heretofore unrecognized structural phase transitions as a function of increasing oxide content. We have found that these films can be fabricated in a reproducible manner with microstructure characterized as either granular, with crystalline grains embedded in crystalline oxide, amorphous, or mixed amorphous and crystalline.
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64.70.K- Solid-solid transitions

Thermal annealing of microcracks produced by backside laser irradiation of silicon

G. E. J. Eggermont, S. A. Gee, C. G. M. van Kessel, R. J. Falster, and J. F. Gibbons

Appl. Phys. Lett. 41, 1133 (1982); http://dx.doi.org/10.1063/1.93409 (3 pages) | Cited 1 time

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Using a cleavage cross‐section technique in combination with Nomarski and scanning electron microscopy, the irradiation of silicon wafer backsides with neodymium: yttrium aluminum garnet laser pulses with energy densities of 20 J/cm is shown to lead to the formation of microcracks in the silicon up to a depth of 20–40 μm. The microcracks are shown to heal during a temperature cycle at 1050 °C. Preferentially etching the cleaved cross‐section surfaces shows the occurrence of dislocations, and the healing of the microcracks is suggested to be the mechanism for the formation of these dislocations, possibly in the form of low angle boundaries. The observed effects and interpretation offer an explanation for the wafer fracture strength behavior exhibited by laser backside damaged silicon wafers.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
79.20.Ds Laser-beam impact phenomena
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Charge carrier generation, transport, and trapping in a photoconductive conjugated polymer: Polyphenylacetylene

E. T. Kang, P. Ehrlich, A. P. Bhatt, and W. A. Anderson

Appl. Phys. Lett. 41, 1136 (1982); http://dx.doi.org/10.1063/1.93410 (3 pages) | Cited 20 times

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Dark currents and photocurrents were measured in 3–6‐μm‐thick films of polyphenylacetylene (PPA) and of iodine‐doped PPA. In undoped PPA, Schottky–Richardson injection from the electrodes is observed and holes are strongly trapped. Defect states exert a major control over dark currents and photocurrents. The photoconductivity action spectrum shows a good response in the red at energies well below the absorption edge. We conclude that undoped PPA is capable of trap‐modulated electron transport through states in the band gap. Doping with iodine enhances photocurrents through charge transfer interaction.
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61.41.+e Polymers, elastomers, and plastics
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Le Polymers; organic compounds (including organic semiconductors)

CO2 laser‐induced melting of indium antimonide

M. Hasselbeck and H. S. Kwok

Appl. Phys. Lett. 41, 1138 (1982); http://dx.doi.org/10.1063/1.93411 (3 pages) | Cited 7 times

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Using picosecond CO2 laser pulses, the following sequence of events was identified in high power laser‐semiconductor interaction: (i) generation of a dense (≳1018 cm3) plasma, (ii) melting of the crystal by free‐carrier absorption, (iii) formation of surface ripples at the breakdown threshold, and (iv) formation of a crater at higher intensities. The melting without breakdown region can be quite broad and may have potential applications in semiconductor processing and annealing.
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79.20.Ds Laser-beam impact phenomena
81.10.Fq Growth from melts; zone melting and refining
81.40.Gh Other heat and thermomechanical treatments

Index of refraction dispersion of n‐ and p‐type InP between 0.95 and 2.0 eV

J. Stone and M. S. Whalen

Appl. Phys. Lett. 41, 1140 (1982); http://dx.doi.org/10.1063/1.93412 (3 pages) | Cited 12 times

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The index of refraction dispersion of InP has been measured by a normal incidence reflection method. The index of refraction is proportional to the reflected power with a small correction necessary for absorption. Spectra are reported for one p‐type and several n‐type crystals, and are fitted with single‐oscillator Sellmeier curves below the band‐gap energy.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.60.-q Optoelectronic devices
42.70.-a Optical materials

Thermal annealing behavior of an oxide layer under silicon

A. H. Hamdi, F. D. McDaniel, R. F. Pinizzotto, S. Matteson, H. W. Lam, and S. D. S. Malhi

Appl. Phys. Lett. 41, 1143 (1982); http://dx.doi.org/10.1063/1.93413 (3 pages) | Cited 10 times

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High resolution Rutherford backscattering spectrometry and ion channeling have been employed to evaluate the crystallinity of the surface silicon layer in oxygen implanted silicon. The quality of the top surface layer was determined by measuring the minimum yields along 〈110〉 directions in channeling spectra. Single crystal (100) silicon was implanted with 300 keV O+2 to a dose of 1.06×1018 O+2 /cm2. Measurements of residual damage of the top layer were made after annealing the samples at 1150 °C for times ranging from 10 to 240 min in either Ar or N2. Under the implantation conditions used in this experiment, a uniform oxide layer 0.52 μm thick was buried under a top silicon layer 0.17 μm thick. The buried oxide layer has abrupt silicon to oxide interfaces. The highest quality silicon surface layer was produced after 3‐h annealing in an Ar ambient. A lesser quality silicon surface layer was produced by annealing for shorter times or for equivalent times in N2 ambient.
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61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Electronic and optical properties of amorphous Si:H films deposited by chemical vapor deposition

M. Akhtar, V. L. Dalal, K. R. Ramaprasad, S. Gau, and J. A. Cambridge

Appl. Phys. Lett. 41, 1146 (1982); http://dx.doi.org/10.1063/1.93414 (3 pages) | Cited 14 times

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Doping properties, optical absorption, and infrared (IR) spectra of amorphous Si:H(a‐Si:H) films prepared by chemical vapor deposition (CVD) of Si2H6 are reported. The optical absorption curves are very sharp and they indicate that the band gap of CVD a‐Si:H can be changed substantially by varying the deposition temperature. A band gap of 1.5 eV has been achieved. IR spectra indicate the presence of Si–H and SiH2 bonds, but H content is less than in device‐quality glow‐discharge deposited a‐Si:H. The activation energy of undoped films is 0.6 eV. n‐type doping can be achieved by PH3 doping and the activation energy reduces to 0.12 eV upon doping. Photoinduced changes in electron trapping (Staebler–Wronski effect) are small in CVD a‐Si:H films.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Motion of deep gold‐related centers in reverse‐biased silicon junction diodes at room temperature

S. J. Pearton and A. J. Tavendale

Appl. Phys. Lett. 41, 1148 (1982); http://dx.doi.org/10.1063/1.93415 (3 pages) | Cited 5 times

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The room‐temperature motion of gold‐related centers in reverse‐biased silicon n+p junction diodes has been observed using deep level transient spectroscopy. The concentration profile of the gold‐related donor level (Ev +0.34 eV) is presented as a function of the duration of the electric field application. A mobility of 7.8±3.2×10−15 cm2 V−1 s−1 at 25 °C was obtained for this center. Under the same conditions, no movement was observed of the deep gold‐related acceptor center (Ec −0.55 eV) in n‐type silicon surface barrier diodes.
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78.40.Fy Semiconductors
66.30.J- Diffusion of impurities

Transmission electron microscopy of GaAs grown over submicrometer‐period tungsten gratings

B. A. Vojak and J. P. Salerno

Appl. Phys. Lett. 41, 1151 (1982); http://dx.doi.org/10.1063/1.93416 (3 pages) | Cited 7 times

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The GaAs overgrowth of tungsten gratings, the most critical step in the fabrication of the permeable base transistor (PBT), has been characterized by transmission electron microscopy (TEM). The 3200‐Å‐period tungsten base gratings for the PBT are very uniform in linewidth and spacing before the GaAs overgrowth, and this uniformity is preserved after the overgrowth. Both voids and stacking faults are observed in the epitaxial GaAs grown over the gratings. An unexpected result of this study is the observation that a considerable density of such defects can be present in a PBT wafer that yields uniform, high‐frequency devices.
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85.30.De Semiconductor-device characterization, design, and modeling
61.72.Nn Stacking faults and other planar or extended defects
68.55.-a Thin film structure and morphology
61.72.-y Defects and impurities in crystals; microstructure

Amorphous‐silicon charge‐coupled devices

Satoru Kishida, Yasuo Nara, Osamu Kobayashi, and Masakiyo Matsumura

Appl. Phys. Lett. 41, 1154 (1982); http://dx.doi.org/10.1063/1.93417 (3 pages) | Cited 4 times

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Amorphous‐silicon charge‐coupled devices have been proposed and demonstrated for the first time. The cross section is of a silicon‐oxynitride/amorphous‐silicon/silicon‐oxynitride structure sandwiched between staggered transfer electrodes. Electrons are transferred along the amorphous‐silicon film with a serpentine motion. The prototype device fabricated on a glass substrate had a transfer inefficiency of as low as 0.4% transfer at 0.5–1‐kHz clock frequencies.
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85.30.De Semiconductor-device characterization, design, and modeling
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