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1 Jul 1982

Volume 41, Issue 1, pp. 1-105

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Optical pulse compression based on enhanced frequency chirping

D. Grischkowsky and A. C. Balant

Appl. Phys. Lett. 41, 1 (1982); http://dx.doi.org/10.1063/1.93306 (3 pages) | Cited 103 times

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Through numerical simulations, we show that, under relatively general conditions, passage of an intense picosecond pulse through a single‐mode optical fiber can cause the pulse to become strongly frequency broadened with a positive chirp (linear frequency sweep) describing essentially all of the energy of the output pulse. Also, because the optical fiber supports only a single transverse mode, the entire output beam profile has the same frequency modulation. These two features allow for unprecedented optical pulse compression.
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42.65.-k Nonlinear optics
42.81.-i Fiber optics

Polariton‐induced compensation of pulse broadening in optical fibers

G. W. Fehrenbach and M. M. Salour

Appl. Phys. Lett. 41, 4 (1982); http://dx.doi.org/10.1063/1.93324 (3 pages) | Cited 1 time

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We report the first experimental technique for compensating the pulse broadening in single‐mode optical fibers, using the ’’slow’’ anomalous pulse propagation in the exciton‐polariton resonance in a direct‐gap semiconductor. Mode‐locked dye laser pulses of 0.7‐ps duration at 8180 Å were propagated through a 100‐m single‐mode optical fiber and emerged with 2.8‐ps duration. We have demonstrated the compensation of this pulse broadening in optical fibers by passage through a 6.3‐μm‐thick GaAs crystal, taking advantage of the group velocity dispersion around the discrete n = 1 exciton‐polariton resonance.
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42.81.-i Fiber optics
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Picosecond carrier dynamics and laser action in optically pumped buried heterostructure lasers

T. L. Koch, L. C. Chiu, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 41, 6 (1982); http://dx.doi.org/10.1063/1.93332 (3 pages) | Cited 18 times

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We report the observation of picosecond optical pulses and unusual pulse structures from optically pumped buried heterostructure semiconductor lasers. A model which considers the hot electron and hole energy distributions dynamically accounts well for our experimental findings. The results are relevant to the problem of the limiting response time of semiconductor lasers.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.20.-e Optical properties of bulk materials and thin films

A closely spaced (50 μm) array of 16 individually addressable buried heterostructure GaAs lasers

J. P. van der Ziel, R. A. Logan, and R. M. Mikulyak

Appl. Phys. Lett. 41, 9 (1982); http://dx.doi.org/10.1063/1.93304 (3 pages) | Cited 13 times

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An array of 16 individual addressable lasers with 50‐μm center spacing has been monolithically integrated on a GaAs chip and cw bonded to a Si submount and copper heat sink. The lasers have the loss stabilized buried heterostructure geometry with separate optical and carrier confinement. The advantages of this laser geometry for integration into arrays are described.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

The effect of baking and pulsed laser irradiation on the bulk laser damage threshold of potassium dihydrogen phosphate crystals

J. E. Swain, S. E. Stokowski, D. Milam, and Gretchen C. Kennedy

Appl. Phys. Lett. 41, 12 (1982); http://dx.doi.org/10.1063/1.93319 (3 pages) | Cited 21 times

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We increased the bulk laser damage threshold of potassium dihydrogen phosphate crystals by as much as a factor of 5 by first baking the crystals at 140 °C for 24 h and then irradiating them with laser pulses of increasing fluence. The combination of baking and subthreshold laser irradiation was more effective in improving bulk damage thresholds than either process alone. The combined process was effective for all laser pulse durations from 1 to 20 ns.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
81.40.Tv Optical and dielectric properties related to treatment conditions

Generation of single‐mode picosecond pulses by injection locking of an AlGaAs semiconductor laser

T. Andersson, S. Lundqvist, and S. T. Eng

Appl. Phys. Lett. 41, 14 (1982); http://dx.doi.org/10.1063/1.93320 (3 pages) | Cited 18 times

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We report on the generation of picosecond single‐mode optical pulses with 1‐GHz repetition rate. Single‐mode operation is obtained by injection locking a modulated multimode buried optical guide laser with a single‐mode channel substrate planar master laser. The power ratio of the dominant mode to the total emitted power is improved from less than 0.07 without to more than 0.9 with injection locking. Detection is performed with an autocorrelator using second‐harmonic generation in a nonlinear crystal. A pulsewidth of 58 ps is obtained assuming a Gaussian pulse shape. Moreover, the substructure of spikes caused by multimode operation is strongly suppressed when the laser is injection locked.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

An efficient, small scale chemical oxygen‐iodine laser

J. Bachar and S. Rosenwaks

Appl. Phys. Lett. 41, 16 (1982); http://dx.doi.org/10.1063/1.93321 (3 pages) | Cited 24 times

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More than 40% extractable power efficiency has been achieved in a transverse flow, small scale, chemically pumped iodine‐atom laser. 5 W of cw laser emission at 1315 nm has been obtained via energy transfer from chemically generated O2(1Δ) to I atoms in a 10×1 cm2 rectangular flow duct. Simple construction materials, safely handled chemicals, and a medium size vacuum pump were used for fabricating and operating the laser. The importance of minimizing quenching of excited species by collision with water molecules or with the wall is demonstrated.
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42.55.Ks Chemical lasers

Facet degradation and passivation of InGaAsP/InP lasers

M. Fukuda, K. Takahei, G. Iwane, and T. Ikegami

Appl. Phys. Lett. 41, 18 (1982); http://dx.doi.org/10.1063/1.93322 (4 pages) | Cited 7 times

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Formation of oxide on mirror facets was observed by Auger electron spectroscopy in InGaAsP/ InP buried heterostructure lasers. The oxide on the mirror facets caused increase of threshold current and leakage current, and decrease of differential quantum efficiency. Such phenomena were observed under nonlasing high current density operation as well as under high optical output power operation. The degradation of lasers due to the mirror facet oxidation is shown to be suppressed by coating the mirror facet with Al2O3.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.70.-a Optical materials

Acoustic wave propagation on indium phosphide surfaces

Jeannine Henaff, Michel Feldmann, Michel Carel, and Reneé Dubois

Appl. Phys. Lett. 41, 22 (1982); http://dx.doi.org/10.1063/1.93307 (3 pages) | Cited 2 times

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In view of combined use of piezoelectric and semiconducting properties of indium phosphide, new surface (SAW) and surface skimming bulk waves (SSBW) are described. The properties of semi‐ insulating InP crystals are investigated in terms of piezoelectric coupling demonstrating that the SSBW branches may be more useful than the SAW branches. Two Rayleigh modes and one Bleustein–Gulyaev branch have been experimentally investigated in the 200–300‐MHz range and good agreement between theory and experiment is reported.
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43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
77.65.-j Piezoelectricity and electromechanical effects

Parametric amplification of surface acoustic wave of ZnO‐Ga‐doped yttrium iron garnet

R. Inaba and N. Mikoshiba

Appl. Phys. Lett. 41, 25 (1982); http://dx.doi.org/10.1063/1.93308 (2 pages) | Cited 1 time

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Interactions of surface acoustic wave (SAW) with magnetization are investigated on a ZnO‐Ga‐ doped yttrium iron garnet (YIG) and GGG structure. The attenuation of SAW depends on the input power of SAW due to a nonlinear interaction with the magnetization of the YIG. Parametric amplification of SAW is closely related to the magnetic field strength and the input power. The amplification gain is 5.1 dB at 180 MHz, the magnetic field strength is 9 Oe, and the input power is −5 dBm.
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62.30.+d Mechanical and elastic waves; vibrations
43.25.-x Nonlinear acoustics
85.70.Ge Ferrite and garnet devices

Derivative‐free inversion of Abel’s integral equation

Moshe Deutsch and Israel Beniaminy

Appl. Phys. Lett. 41, 27 (1982); http://dx.doi.org/10.1063/1.93309 (2 pages) | Cited 27 times

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We present a new inversion formula for Abel’s integral equation which does not require derivatives of any of the functions involved. This is a particularly desirable feature when analyzing experimentally derived data, since differentiation enormously amplifies the random errors inherent in all measured data. The high quality of the results obtainable using the new formula is demonstrated by a typical numerical example for which it yields errors smaller by an order of magnitude than those obtained with the usual inversion formula.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.20.Fs Electron collisions

Plasma bubble domains: A magnetic bubble analog

David G. Boyers and William A. Tiller

Appl. Phys. Lett. 41, 28 (1982); http://dx.doi.org/10.1063/1.93310 (4 pages) | Cited 40 times

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See Also: Erratum

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Results are presented on the discovery of plasma bubble domains (PBD’s), which occur as regular patterns of localized glow discharges formed under ac excitation in an atmospheric pressure inert gas based mixture confined between large‐area, closely spaced, plane‐parallel, dielectric‐covered electrodes. These plasma bubble domains have many characteristics analogous to those of magnetic bubble domains (MBD’s): (1) Changing the applied field changes the size and the shape of the domain that forms (bubble, stripe, etc.). (2) There is a range of applied fields over which a bubble domain exhibits a corresponding range of stable diameters. (3) Bubble domains are bistable. Whereas MBD’s are used in computer memory devices, PBD’s are most likely to be used in computer display devices. ials; electrodes; surface coatings; electric fields; configuration;
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52.80.Hc Glow; corona
52.75.-d Plasma devices
85.60.Jb Light-emitting devices
85.60.Pg Display systems

Poloidal flux loss in a field‐reversed theta pinch

Alan L. Hoffman, Richard D. Milroy, and Loren C. Steinhauer

Appl. Phys. Lett. 41, 31 (1982); http://dx.doi.org/10.1063/1.93311 (3 pages) | Cited 33 times

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Poloidal flux loss has been measured in field‐reversed configurations and related to anomalous resistivity near the magnetic field null. The results indicate that mechanisms in addition to the lower hybrid drift instability are affecting transport.
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52.55.Fa Tokamaks, spherical tokamaks
52.55.Hc Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices
52.25.Fi Transport properties

Field imperfection induced frequency shifts in a Penning trap

Chun‐Sing O, G. F. Gärtner, and H. A. Schuessler

Appl. Phys. Lett. 41, 33 (1982); http://dx.doi.org/10.1063/1.93312 (3 pages) | Cited 1 time

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The effects of field imperfections on the cyclotron resonance frequency of charged particles stored in imperfect Penning traps were evaluated. Anharmonicity in the electric potential distribution and the magnetic field misalignment lead to shifted and asymmetrically broadened resonance signals. The frequency shifts were observed experimentally. The corrected cyclotron resonance frequencies are in good agreement with the cyclotron frequency obtained through extrapolation to zero confining voltage.
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52.55.Jd Magnetic mirrors, gas dynamic traps
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

A stress detection technique for stressed structures, including superconducting magnets

N. Tamada, F. Schauer, and Y. Iwasa

Appl. Phys. Lett. 41, 36 (1982); http://dx.doi.org/10.1063/1.93313 (3 pages) | Cited 3 times

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It is demonstrated here that the resonant frequencies of a structure shift with stress in the structure. We propose to use this stress‐induced shift in resonant frequency to monitor stressed structures such as superconducting magnets. Results observed from a large superconducting magnet are presented.
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85.25.-j Superconducting devices

Stroboscopic microscopy of fast electro‐optic switching in ferroelectric smectic C liquid crystals

M. A. Handschy and Noel A. Clark

Appl. Phys. Lett. 41, 39 (1982); http://dx.doi.org/10.1063/1.93314 (3 pages) | Cited 74 times

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We have characterized the process that yields high‐speed, bistable, electro‐optic switching in the surface‐stabilized ferroelectric liquid crystal geometry, at intermediate electric fields. Switching proceeds by a continuous reversal of ferroelectric polarization in regions away from the surfaces of the sample, followed by the nucleation and growth of domains of reversed polarization in the remaining surface layers. A model involving bulk distortion+electrostatic+surface free energy successfully accounts for the variation of the switching process with changes in applied electric field.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
77.80.Dj Domain structure; hysteresis
78.20.Jq Electro-optical effects

Mass transport in laser surface alloying: Iron‐nickel system

T. Chande and J. Mazumder

Appl. Phys. Lett. 41, 42 (1982); http://dx.doi.org/10.1063/1.93315 (2 pages) | Cited 30 times

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The role of fluid flow in producing uniformly alloyed beads in laser surface alloying is examined and the experimental finding that the uniformity of alloying increased with a decrease in the beam diameter is analyzed. Fluid flow can dominate the process of solute redistribution in the melt pool by producing a fine dispersion of solute rich pockets. The fineness of the scale is estimated and found to compare favorably with the experimentally measured scale of local fluctuations in composition. It is found that the magnitude of the surface tension gradients is primarily dependent upon the magnitude of the surface temperature gradients. This can be used to estimate the effect of process parameters on the vigor of the fluid flow in the pool, which controls the process of mass transport in laser surface alloying.
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66.10.C- Diffusion and thermal diffusion
81.20.-n Methods of materials synthesis and materials processing
68.03.Cd Surface tension and related phenomena

Picosecond electron diffraction

Gerard Mourou and Steve Williamson

Appl. Phys. Lett. 41, 44 (1982); http://dx.doi.org/10.1063/1.93316 (2 pages) | Cited 47 times

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A picosecond photoelectron pulse generated by a streak camera has been used to probe a thin film of aluminum producing a diffraction pattern representative of its lattice structure. Because this photoelectron pulse is in picosecond synchronism with the optical pulse, this technique will make possible the investigation of structural phase transitions in the picosecond time domain.
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06.60.Jn High-speed techniques (microsecond to femtosecond)
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
41.75.Fr Electron and positron beams
61.05.J- Electron diffraction and scattering

Formation kinetics of MoSi2 induced by cw scanned laser beam

G. Bomchil, D. Bensahel, A. Golanski, F. Ferrieu, G. Auvert, A. Perio, and J. C. Pfister

Appl. Phys. Lett. 41, 46 (1982); http://dx.doi.org/10.1063/1.93323 (3 pages) | Cited 8 times

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Scanned cw laser beams at different scan velocities from 10 to 400 cm/s have been used to study the interaction of thin metal films of molybdenum deposited by electron beam evaporation with single‐crystal silicon substrate. Backscattering technique has been used to investigate the growth mechanism of hexagonal silicide MoSi2 as a function of the number of repetitive laser scans. Silicide layers are found to grow at a rate proportional to the square root of the effective annealing time in the whole range of scan velocities. Effective annealing temperatures are calculated for each laser annealing condition, and from an Arrhenius plot a mean value of activation energy for MoSi2 growth is estimated.
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82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.40.-g Chemical kinetics and reactions: special regimes and techniques

Chemical bonding of W‐Si compounds

K. Akimoto

Appl. Phys. Lett. 41, 49 (1982); http://dx.doi.org/10.1063/1.93305 (3 pages) | Cited 2 times

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The chemical bonding of W‐Si compounds formed by plasma chemical vapor deposition [WSi (PD)] and hot pressing [WSi (HP)] was investigated by x‐ray photoelectron spectroscopy and Si‐Kβ emission spectroscopy. Some apparent chemical effects on the spectra of these W‐Si compounds were observed and can be reasonably interpreted by a model in which chemical bonding between the W and Si atoms consists of a major σ donation and a minor π back donation. The chemical effects suggest that the bonding between the W and Si atoms in WSi(HP) is stronger than that in WSi (PD).
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78.70.En X-ray emission spectra and fluorescence
79.60.Jv Interfaces; heterostructures; nanostructures
73.61.At Metal and metallic alloys

Picosecond surface Raman spectroscopy beyond the damage limit

D. F. Voss, C. A. Paddock, and R. B. Miles

Appl. Phys. Lett. 41, 51 (1982); http://dx.doi.org/10.1063/1.93325 (3 pages) | Cited 2 times

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Picosecond Raman spectra of adsorbed CN were obtained for the first time in the presence of extensive surface damage. The incident laser intensity was 40 times than previously reported. At this intensity, nonlinear Raman spectroscopy such as coherent anti‐Stokes Raman scattering should be feasible without dependence on surface enhancement.
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68.35.Ja Surface and interface dynamics and vibrations
78.30.-j Infrared and Raman spectra
75.20.Ck Nonmetals

Schottky barrier height measurement by electron‐beam induced voltage

H.‐C. W. Huang, C. F. Aliotta, and P. S. Ho

Appl. Phys. Lett. 41, 54 (1982); http://dx.doi.org/10.1063/1.93326 (3 pages) | Cited 8 times

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We demonstrate that electron‐beam induced voltage (EBIV) technique can be used for direct measurement of Schottky (or p‐n junction) barrier height. Schottky barrier heights of PtSi, Pd2Si, and TiSi2 on n‐type (111) Si measured by this technique were found to be 0.84, 0.74, and 0.57 eV, respectively, in excellent agreement with values obtained by the standard current‐voltage technique. Because of no complication due to leakage current in EBIV measurement, this technique is particularly suited for studying the formation of low barrier height Schottky diodes. Furthermore, this technique can be extended for in situ measurements of barrier height to supplement surface electron spectroscopy studies on the electrical and chemical characteristics of silicide/Si interfaces.
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73.30.+y Surface double layers, Schottky barriers, and work functions

Preparation of surface silicon nitride films by low energy ion implantation

G. E. Thomas, L. J. Beckers, F. H. P. M. Habraken, and A. E. T. Kuiper

Appl. Phys. Lett. 41, 56 (1982); http://dx.doi.org/10.1063/1.93327 (4 pages) | Cited 11 times

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Surface silicon nitride layers have been formed on Si(100) crystals via high dose implantation of 1 keV N+ and 2 keV N+2 ions in ultrahigh vacuum. Auger electron spectroscopy depth profiles and Rutherford backscattering measurements indicate the formation of a relatively uniform layer having a composition near Si3N4 to a depth of approximately 70 Å. The current‐voltage characteristics of such implanted layers are inferior to those of standard Si3N4 layers.
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68.55.-a Thin film structure and morphology
73.61.Ng Insulators
61.80.Jh Ion radiation effects

Metal‐oxide‐semiconductor field‐effect transistors fabricated in laterally seeded epitaxial Si layers on SiO2

M. Miyao, M. Ohkura, I. Takemoto, M. Tamura, and T. Tokuyama

Appl. Phys. Lett. 41, 59 (1982); http://dx.doi.org/10.1063/1.93328 (3 pages) | Cited 9 times

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Metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) were fabricated in laterally seeded epitaxial Si layers on SiO2, using cw Ar laser irradiation. FET’s were distributed in various regions of the epitaxial films grown on SiO2, as well as directly on a Si substrate. Electronic properties were found to be good when compared with that for bulk Si, even though mobility at the SiO2 edge was somewhat poor. The results are discussed in connection with the crystal qualities examined through use of optical and electron microscopy.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology

Observation of discrete current levels in metal‐oxide‐semiconductor field‐ effect transistors switched into weak inversion between 10 and 25 K

S. K. Tewksbury

Appl. Phys. Lett. 41, 62 (1982); http://dx.doi.org/10.1063/1.93329 (3 pages) | Cited 2 times

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A discrete conductance effect in the transient response of an n‐channel metal‐oxide‐ semiconductor field‐effect transistor (MOSFET) switched from accumulation to weak surface inversion between 10 and 25 K is described. The discrete conductance appears as a set of equally spaced current levels superimposed on the steady state and transient currents. Transitions to lower discrete current levels are randomly distributed in time over the interval 0⩽t⩽τp(n), with τp(n) the maximum persistence time of the nth level and t = 0 the time when the MOSFET is switched into weak inversion. Up to six discrete levels have been observed. The general dependence of the current on biases and temperature is described.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.Tv Field effect devices
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