APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

1 Jul 1982

Volume 41, Issue 1, pp. 1-105

Page 2 of 2 Pages Previous Page | Jump to Page

Laser‐induced lateral epitaxial growth of silicon over silicon dioxide with locally varied encapsulation

J. Sakurai, S. Kawamura, M. Nakano, and M. Takagi

Appl. Phys. Lett. 41, 64 (1982); http://dx.doi.org/10.1063/1.93330 (4 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
The effect and use of locally varied encapsulation thickness has been demonstrated in cw Ar laser‐ induced lateral epitaxial growth of silicon (Si) layers over silicon dioxide (SiO2) islands. The reflectivity of the laser light has been separately controlled in each region of the Si seed or the SiO2 island by changing the thicknesses of SiO2 and/or silicon nitride (Si3N4) caps. The technique essentially eliminates the surface ripples and thermal detachment of the laser‐recrystallized Si layer, producing single crystalline layers over SiO2 islands as large as 15×80 μm and 20×40 μm.
Show PACS
79.20.Ds Laser-beam impact phenomena
81.10.Fq Growth from melts; zone melting and refining

A new method to control impact ionization rate ratio by spatial separation of avalanching carriers in multilayered heterostructures

T. Tanoue and H. Sakaki

Appl. Phys. Lett. 41, 67 (1982); http://dx.doi.org/10.1063/1.93331 (4 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We propose a new scheme to control the impact ionization rate ratio α/β of electrons and holes by utilizing multilayered heterostructures (–A–B–A–B–). In the structure, avalanching carriers, which accelerated mainly along the layer plane, are spatially separated by the action of band edge discontinuities in such a way that the impact ionization process of electrons takes place mainly in layer A and that of holes in layer B. An analysis is made to show that a proper choice of constituent materials allows the control of α/β over an extremely wide range (10−2∼103).
Show PACS
72.20.Ht High-field and nonlinear effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Dw Photodiodes; phototransistors; photoresistors
72.10.Bg General formulation of transport theory

Direct evidence for the site of substitutional carbon impurity in GaAs

W. M. Theis, K. K. Bajaj, C. W. Litton, and W. G. Spitzer

Appl. Phys. Lett. 41, 70 (1982); http://dx.doi.org/10.1063/1.93333 (3 pages) | Cited 85 times

Full Text: | Download PDF

Show Abstract
Direct evidence that substitutional carbon in GaAs is predominantly on the As sublattice is obtained from Fourier transform infrared spectroscopy absorption measurements of the carbon‐induced localized vibrational mode (LVM). The previously reported LVM absorption band of carbon is measured under high resolution conditions and is found to be the near superposition of at least four bands. It is shown by comparison with similar measurements of silicon‐doped GaAs and by physical arguments that the only satisfactory explanation is that the bands arise from carbon on As sites with different nearest‐neighbor configurations of the two Ga isotopes. There is no experimental indication of carbon on the Ga sublattice. These are the first observations of such shifts in LVM spectra for simple substitutional impurity defects in semiconductors.
Show PACS
63.20.Pw Localized modes
78.30.Hv Other nonmetallic inorganics
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

28Si implantation into 40Ar implant‐pretreated semi‐insulating GaAs substrates—mobility and activation efficiency enhancement

S. G. Liu, S. Y. Narayan, C. W. Magee, and C. P. Wu

Appl. Phys. Lett. 41, 72 (1982); http://dx.doi.org/10.1063/1.93293 (4 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We describe a 750‐keV, 5–10×1012 cm−2 dose, 40Ar implant pretreatment for semi‐insulating (SI) GaAs substrates allowing generation of 28Si implanted n layers with higher mobility and/or activation efficiency. This effect was observed in Bridgman Cr‐doped, Bridgman Cr‐O‐doped, liquid encapsulated Czochralski (LEC) Cr‐doped, and LEC undoped substrates. Pretreated and control samples were studied by carrier profiling, van der Pauw measurements, and secondary ion mass spectrometry (SIMS). The compensation ratio (ϑ = NA/ND) of n layers in pretreated substrates was lower than in controls. Probable mechanisms of improvement in ϑ are (1) reduced surface Cr concentration due to pretreatment, (2) preferential incorporation of 28Si on Ga sites due to pretreatment‐created stoichiometry imbalance, and (3) a combination thereof.
Show PACS
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Plasma‐enhanced chemical vapor deposition of tungsten films

J. K. Chu, C. C. Tang, and D. W. Hess

Appl. Phys. Lett. 41, 75 (1982); http://dx.doi.org/10.1063/1.93294 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
High‐purity films of tungsten are deposited from tungsten hexafluoride and hydrogen using plasma‐enhanced deposition (PED). At 400 °C deposition temperature, resistivities of ∼40 μΩ cm are attained. After annealing at 1100 °C, the resistivity falls to ∼7 μΩ cm. Below 400 °C, the as‐deposited film stress is <6×109 dynes/cm2. Tensile, unlike tungsten, molybdenum films deposited by PED displayed high resistivities.
Show PACS
73.61.At Metal and metallic alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
52.80.Vp Discharge in vacuum

Surface morphology of erbium silicide

S. S. Lau, C. S. Pai, C. S. Wu, T. F. Kuech, and B. X. Liu

Appl. Phys. Lett. 41, 77 (1982); http://dx.doi.org/10.1063/1.93295 (4 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
The surface of rare‐earth silicides (Er, Tb, etc.), formed by the reaction of thin‐film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n‐type Si. This study suggests that contamination at the metal‐Si or silicide‐Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.
Show PACS
68.60.-p Physical properties of thin films, nonelectronic
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
66.30.Lw Diffusion of other defects
68.55.-a Thin film structure and morphology

Surface etching kinetics of hydrogen plasma on InP

C. W. Tu, R. P. H. Chang, and A. R. Schlier

Appl. Phys. Lett. 41, 80 (1982); http://dx.doi.org/10.1063/1.93296 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm−3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10−6 Torr) by residual water vapor. However, at low base pressure (≲10−7 Torr) the native oxide (∼10 Å) can be etched away.
Show PACS
81.65.-b Surface treatments
52.40.Hf Plasma-material interactions; boundary layer effects

Microsecond carrier lifetimes in Si films prepared on SiO2‐coated Si substrates by zone‐melting recrystallization and by subsequent epitaxial growth

B‐Y. Tsaur, John C. C. Fan, and M. W. Geis

Appl. Phys. Lett. 41, 83 (1982); http://dx.doi.org/10.1063/1.93297 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The generation lifetimes in zone‐melting‐recrystallized Si films on SiO2‐coated Si substrates and in epitaxial Si layers grown by chemical vapor deposition on the recrystallized films have been determined by pulsed metal‐oxide‐semiconductor (MOS) capacitor and p‐n junction leakage current measurements. For recrystallized Si films that are 1×1017 cm−3 n type and 1×1016 cm−3 p type, respectively, the lifetimes are 0.2–0.5 μs and ∼1 μs. For epitaxial Si layers that are 2×1015 cm−3 n type, lifetimes are 0.8–1.3 μs, compared to ∼2 μs for control layers grown on single‐ crystal Si 〈100〉 wafers. The relatively high lifetimes suggest the possibility of fabricating bipolar devices utilizing Si‐on‐insulator structures prepared by the present techniques.
Show PACS
68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Tv Field effect devices

A new silicon‐on‐insulator structure using a silicon molecular beam epitaxial growth on porous silicon

Shinsuke Konaka, Michiharu Tabe, and Tetsushi Sakai

Appl. Phys. Lett. 41, 86 (1982); http://dx.doi.org/10.1063/1.93298 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
A new silicon‐on‐insulator (SOI) structure has been achieved by utilizing silicon molecular beam epitaxial (Si‐MBE) growth on porous silicon, silicon island patterning, and the subsequent laterally enhanced oxidation of the porous silicon. The surface of Si‐MBE film grown on porous silicon at 770 °C without high‐temperature preheating has a 7×7 superlattice structure when observed by a reflection high‐energy electron diffraction (RHEED). Patterned Si‐MBE film island, that is 7.0 μm wide and 0.35 μm thick, is successfully isolated by the laterally enhanced oxidation of porous silicon.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

A new technique for gettering oxygen and moisture from gases used in semiconductor processing

J. R. Shealy and J. M. Woodall

Appl. Phys. Lett. 41, 88 (1982); http://dx.doi.org/10.1063/1.93299 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
A technique for the removal of small amounts of water vapor and oxygen from hydrogen and nitrogen is described in which the gas is purified by bubbling it through a gallium‐indium‐ aluminum melt at room temperature. Using this technique, dew points of ⩽−80 °C are achieved when the starting gas contains as much as one part per thousand of water vapor.
Show PACS
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Organic‐on‐inorganic semiconductor contact barrier devices

S. R. Forrest, M. L. Kaplan, P. H. Schmidt, W. L. Feldmann, and E. Yanowski

Appl. Phys. Lett. 41, 90 (1982); http://dx.doi.org/10.1063/1.93300 (4 pages) | Cited 52 times

Full Text: | Download PDF

Show Abstract
The organic compound 3,4,9,10‐perylenetetracarboxylic dianhydride (PTCDA) has previously been observed to undergo a large increase in conductivity on irradiation with energetic particle beams. In this letter, we describe the electrical characteristics of novel rectifying junctions employing unirradiated PTCDA vapor deposited onto 10‐Ω cm p‐Si substrates. The PTCDA‐Si contact barrier has a height of ϕB = 0.74 eV. The resulting diodes undergo avalanche breakdown at VB = 230 V, and exhibit current densities at 1/2  VB of ⩽50  μA/cm2. In addition, the forward current‐voltage (IF−V) characteristics are strongly dependent on the contact metal used on the top PTCDA surface. The best results obtained were for diodes employing Ti contacts which gave nonhysteretic, stable IF‐V characteristics with an ideality factor of n = 1.7. Several properties of the as‐deposited PTCDA are also discussed. The rectifying characteristics reported here, coupled with the properties of irradiated PTCDA, suggest many unique device applications.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.-i Conductivity phenomena in semiconductors and insulators
72.80.Le Polymers; organic compounds (including organic semiconductors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Analysis of arsenic and phosphorus ion implanted silicon by spectroscopic ellipsometry

J. P. Cortot and Ph. Ged

Appl. Phys. Lett. 41, 93 (1982); http://dx.doi.org/10.1063/1.93301 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Crystalline damage of As+ and P+ ion implanted silicon has been investigated by spectroscopic ellipsometry at wavelengths in the range 325–400 nm. The experimental procedure takes care of the presence of a technology dependent surface layer. The measurements made can be unambiguously associated with crystalline damage and are sensitive to doses as low as two orders of magnitude below the amorphization dose.
Show PACS
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
75.20.Ck Nonmetals
81.40.Tv Optical and dielectric properties related to treatment conditions

Optical response time of In0.53Ga0.47As/InP avalanche photodiodes

S. R. Forrest, O. K. Kim, and R. G. Smith

Appl. Phys. Lett. 41, 95 (1982); http://dx.doi.org/10.1063/1.93302 (4 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Heterojunction In0.53Ga0.47As/InP avalanche photodiodes have recently been observed to have a response to long‐wavelength optical pulses which contains both fast and slow components. We present evidence that the slow response is limited by charge pile‐up at the semiconductor heterointerface. We find that the speed of response depends on the degree of compositional grading in the heterointerface region. The response time can be significantly reduced for compositional grading lengths of greater than 600 Å depending on the doping and depletion region width in the In0.53Ga0.47As layer.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors
72.80.Ey III-V and II-VI semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Parameter fluctuations and low frequency noise in Josephson junction devices

C. D. Tesche

Appl. Phys. Lett. 41, 99 (1982); http://dx.doi.org/10.1063/1.93303 (2 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
A model is presented for a possible source of low frequency (1/f) noise in the dc superconducting quantum interferometer device (SQUID). Thermal fluctuations within the device are assumed to generate low frequency fluctuations in the device parameters. The resultant parameter fluctuations induce fluctuations in the device characteristics. As an example, low frequency voltage noise spectral densities are computed as a function of temperature and applied flux. In addition, low frequency variations in the forward transfer function of the SQUID are predicted. The model can be generalized to predict low frequency noise generated by parameter fluctuations in other Josephson junction circuits.
Show PACS
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
72.70.+m Noise processes and phenomena

Evidence for hot‐electron injection across p‐GaP/electrolyte junctions

John A. Turner and Arthur J. Nozik

Appl. Phys. Lett. 41, 101 (1982); http://dx.doi.org/10.1063/1.93317 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Evidence has been obtained for hot‐electron injection from illuminated p‐GaP photocathodes into nonaqueous electrolyte containing anthracene as the electron acceptor. The position of the conduction‐band edge at the electrolyte interface has been unequivocally established from Mott– Schottky plots in the dark and under illumination; no band‐edge movement occurs during the experiment. The observed supraband‐edge reduction of anthracene occurs with a hot‐electron energy of 0.9 eV.
Show PACS
82.47.-a Applied electrochemistry
84.60.Jt Photoelectric conversion
73.40.Mr Semiconductor-electrolyte contacts

Optical writing on blue, sputtered iridium oxide films

M. A. Bösch, K. S. Kang, S. Hackwood, G. Beni, and J. L. Shay

Appl. Phys. Lett. 41, 103 (1982); http://dx.doi.org/10.1063/1.93318 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Optical writing on sputtered iridium oxide films is reported. Optical changes on a 1‐μm scale have been observed with a low‐power helium neon laser. The basic writing mechanism is thermally induced dehydration at temperatures well below the melting point.
Show PACS
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
79.20.Ds Laser-beam impact phenomena
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
42.70.Gi Light-sensitive materials
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close