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15 Jul 1982

Volume 41, Issue 2, pp. 107-208

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Rotationally relaxed, grating tuned laser oscillations in optically pumped C2D2

T. A. Fischer and C. Wittig

Appl. Phys. Lett. 41, 107 (1982); http://dx.doi.org/10.1063/1.93435 (3 pages) | Cited 1 time

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Rotationally relaxed, grating tuned laser oscillations are obtained in the frequency range 500–562 cm−1 via the optical pumping of C2D2/He mixtures with a transverse, electric, atmospheric (TEA) CO2 laser. Strong Q‐branch oscillations at 530.8 cm−1 are also reported.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Pumping mechanism of Javan’s pure rotational OH laser

Dean W. Robinson

Appl. Phys. Lett. 41, 110 (1982); http://dx.doi.org/10.1063/1.93443 (3 pages)

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Javan and coworkers have reported pure rotational laser oscillation from OH and OD in a pulsed discharge through H2‐O2‐SF6 mixtures. The pumping mechanism was not established, but it was thought at the time to be chemical. The intensity distribution can be understood as resulting from the electronic to rotational transfer of 13 200 cm−1 from O2(1Σ+g ) to ground vibrational state OH(2Π) leaving the O2 in its ground 3Σ−g state. Unexcited OH would be formed from either the reaction O+H2 = OH+H or H+O2 = OH+O. Nothing can be said about the efficiency of this E‐R transfer compared to E‐V; however, E‐R appears to be a new mechanism for pumping diatomic, pure rotational inversions. The full explanation of this laser also demands the conclusion that SF6, like the rare gases, can serve as a collision partner inducing intramolecular V‐R transition in OH.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Semiconductor interferometric laser

Ismail H. A. Fattah and Shyh Wang

Appl. Phys. Lett. 41, 112 (1982); http://dx.doi.org/10.1063/1.93444 (3 pages) | Cited 7 times

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A novel semiconductor laser employing a cavity structure of the open ended Michelson interferometer is studied. The interference effect is used to select and stabilize the longitudinal mode of the laser. Experimental results showed that lasing action is observed only at the few coincident resonant modes that do not suffer any interference loss. Hence the operating wavelength is primarily determined by the cavity dimensions. The laser showed a change of 0.667 Å/ °C in its lasing wavelength with temperature, a considerable improvement over the conventional Fabry–Perot lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics

Mid‐infrared lasers in hydrogen and deuterium

T. A. Barr and W. B. McKnight

Appl. Phys. Lett. 41, 114 (1982); http://dx.doi.org/10.1063/1.93445 (3 pages) | Cited 6 times

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New laser lines at 3.71 and 3.84 μm in hydrogen and lines at 4.52, 4.60, and 4.71 μm in deuterium excited by a pulsed electrical discharge have been obtained. The lines in hydrogen are assigned to the a 3Σ+g → c 3Πu triplet band, but the lines in deuterium have not yet been assigned. Direct electronic excitation from the ground state to the a 3Σ+g state is believed to be the excitation mechanism, and indicates that an excimer‐type laser from the a 3Σ+g upper state to the dissociative b 3Σ+u state may be possible.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Vibrational excitation of HCl in electron beam excited Ar/HCl mixtures

R. E. Center, J. H. Jacob, M. Rokni, and Z. Rozenberg

Appl. Phys. Lett. 41, 116 (1982); http://dx.doi.org/10.1063/1.93446 (3 pages) | Cited 10 times

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Measurements have been made of the vibrational excitation of HCl under typical e‐beam XeCl laser conditions. The results indicate less than 10% excitation to the first vibrational level. This is too small to yield the tenfold enhancement of dissociative electron attachment predicted by existing XeCl laser models.
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34.80.Gs Molecular excitation and ionization

High power coupled multiple stripe quantum well injection lasers

D. R. Scifres, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 41, 118 (1982); http://dx.doi.org/10.1063/1.93447 (3 pages) | Cited 39 times

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Operation of a coupled multiple stripe quantum well injection laser array is described. The device emits up to 400 mW of continuous output power and 2.1 W of peak pulsed (75 ns) output power from an uncoated mirror facet. Its far‐field pattern is invariant to over three times threshold, and over 140 mW cw are coupled into a 100‐μm core 0.3‐numerical aperture (N.A.) optical fiber.
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42.55.Px Semiconductor lasers; laser diodes
42.81.-i Fiber optics
42.82.-m Integrated optics

Electron density and energy output limits of plasma‐recombination lasers

O. R. Wood and W. T. Silfvast

Appl. Phys. Lett. 41, 121 (1982); http://dx.doi.org/10.1063/1.93448 (3 pages) | Cited 15 times

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Theoretically estimated limiting electron densities for plasma‐recombination lasers are shown to agree with experimentally measured values over a wavelength variation of nearly one decade. Radiation trapping is found not to restrict the electron densities in recombination lasers that operate at wavelengths longer than about 100 nm. For wavelengths shorter than 150 nm predicted specific output energies for plasma‐recombination lasers may exceed those of excimer lasers.
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42.55.-f Lasers

Transient behavior of an actively mode‐locked semiconductor laser diode

John C. AuYeung, Larry A. Bergman, and Alan R. Johnston

Appl. Phys. Lett. 41, 124 (1982); http://dx.doi.org/10.1063/1.93449 (3 pages) | Cited 3 times

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Experimental investigation was carried out to study the transient regimes during the buildup and decay of the active mode‐locked state in a laser diode. The mode locking was achieved through a sinusoidal modulation of the diode current with the laser in an external cavity. The pulse shape evolution and the time constants for the buildup and decay were determined.
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42.55.Px Semiconductor lasers; laser diodes

Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit

Israel Ury, Kam Y. Lau, Nadav Bar‐Chaim, and Amnon Yariv

Appl. Phys. Lett. 41, 126 (1982); http://dx.doi.org/10.1063/1.93425 (3 pages) | Cited 6 times

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A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal‐semiconductor field‐effect transistor on a semi‐insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Thermal waveguiding in oxide‐defined, narrow‐stripe, large‐optical‐cavity lasers

Y. C. Chen, A. R. Reisinger, and S. R. Chinn

Appl. Phys. Lett. 41, 129 (1982); http://dx.doi.org/10.1063/1.93426 (3 pages) | Cited 1 time

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The characteristics of oxide‐defined, narrow‐stripe large‐optical‐cavity (LOC) AlGaAs lasers are described. Compared with regular narrow‐stripe double heterostructure (DH) lasers, the LOC version exhibits more narrowing of the near‐field and far‐field distributions, higher astigmatism, higher differential quantum efficiency, and higher incidence of sustained pulsations. We have found that these phenomena can be explained in terms of the formation of a thermal waveguide. There is often a striking similarity in characteristics of narrow‐stripe LOC and degraded narrow‐ stripe DH lasers. We suggest that a thermal waveguiding effect is an important factor in determining the behavior of degraded semiconductor lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Discrete Fourier transformation using a time‐integrating, acousto‐optical signal processor

John N. Lee, Shih‐Chun Lin, and A. B. Tveten

Appl. Phys. Lett. 41, 131 (1982); http://dx.doi.org/10.1063/1.93427 (3 pages) | Cited 1 time

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Discrete Fourier transformation has been implemented on a time‐integrating, acousto‐optical signal processor based on the chirp z‐transform algorithm. Novel features are the use of an injection diode laser for signal input and an additive architecture. The operational principles are analytically derived and experimentally demonstrated. Discrete Fourier transforms of 4, 8, 64, and 128 points are in excellent agreement with fast Fourier transform simulations. The architecture lends itself easily to miniaturization and to extension to parallel, multichannel operation.
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42.30.Kq Fourier optics
42.62.-b Laser applications

Integrated optical temperature sensor

L. M. Johnson, F. J. Leonberger, and G. W. Pratt

Appl. Phys. Lett. 41, 134 (1982); http://dx.doi.org/10.1063/1.93428 (3 pages) | Cited 14 times

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An integrated optical temperature sensor requiring no electrical connection and consisting of a parallel array of unequal arm‐length waveguide interferometers in LiNbO3 has been designed and the key components have been demonstrated. The optical transmission of each interferometer varies sinusoidally with temperature with a period inversely proportional to the path length difference between the two arms. This device has a projected range and resolution of ≳700 °C and 2×10−3 °C, respectively, and would be particularly useful in applications requiring immunity to electrical noise.
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42.82.-m Integrated optics
07.07.Mp Transducers
07.20.Dt Thermometers
42.79.Gn Optical waveguides and couplers

Optimum operational parameters of the ultrashort cavity laser

J. Q. Yao

Appl. Phys. Lett. 41, 136 (1982); http://dx.doi.org/10.1063/1.93429 (3 pages) | Cited 1 time

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The influence of input parameters and cavity parameters of the ultrashort cavity laser is discussed in terms of numerical calculation of the rate equations of this laser. The optimum parameters of the ultrashort cavity laser are obtained. The results of this letter will provide some theoretical guides for designing and adjusting picosecond tunable dye lasers with ultrashort cavities.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Microbend optical fiber tapped delay line for gigahertz signal processing

K. P. Jackson, J. E. Bowers, S. A. Newton, and C. C. Cutler

Appl. Phys. Lett. 41, 139 (1982); http://dx.doi.org/10.1063/1.93430 (3 pages) | Cited 7 times

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A single‐mode optical fiber tapped delay line which utilizes microbend taps has been constructed. The taps are obtained simply and repeatably and are uniform to ±1 dB. A device with 19 taps and a 1‐ns delay between taps was constructed. The average tap strength was 1.5%. The frequency response for the device has been measured and simple programmability has also been demonstrated. Extension of the procedure to devices with 102–103 taps and 100‐ps time delays is possible.
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42.81.-i Fiber optics

Real‐time phase conjugate window for one‐way optical field imaging through a distortion

Baruch Fischer, Mark Cronin‐Golomb, Jeffrey O. White, and Amnon Yariv

Appl. Phys. Lett. 41, 141 (1982); http://dx.doi.org/10.1063/1.93431 (3 pages) | Cited 22 times

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We demonstrate one‐way optical field imaging through a distorting medium using a four‐wave mixing implementation of real‐time holography. Information can be transmitted at an arbitrarily fast rate as long as the mixing medium can respond to changes in the distortion.
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42.30.Va Image forming and processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.40.Kw Holographic interferometry; other holographic techniques

Tensile stress dependence of magnetically induced ultrasonic shear wave velocity change in polycrystalline A‐36 steel

H. Kwun and C. M. Teller

Appl. Phys. Lett. 41, 144 (1982); http://dx.doi.org/10.1063/1.93432 (3 pages) | Cited 5 times

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Magnetically induced changes in the velocity of 4.5‐MHz ultrasonic shear waves have been measured as a function of tensile stress in polycrystalline A‐36 steel. The velocity changes are dependent on the relative orientations of the shear wave polarization, the magnetic field, and the external tensile stress. When the shear wave is polarized and propagated perpendicular to the tensile stress, the velocity changes induced by a magnetic field applied parallel to either stress or polarization were found to decrease with stress. This stress dependence of the magnetically induced velocity change shows potential for the nondestructive evaluation of stress in ferromagnetic materials.
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75.80.+q Magnetomechanical effects, magnetostriction
43.35.Rw Magnetoacoustic effect; oscillations and resonance
75.50.Bb Fe and its alloys

Gases for possible use in diffuse‐discharge switches

L. G. Christophorou, S. R. Hunter, J. G. Carter, and R. A. Mathis

Appl. Phys. Lett. 41, 147 (1982); http://dx.doi.org/10.1063/1.93433 (3 pages) | Cited 45 times

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Desirable electron attachment and electron drift characteristics of gases for possible use in diffuse‐discharge switches are indicated. Gas mixtures for possible use in externally sustained (e‐ beam) diffuse‐discharge switches are suggested on the basis of electron attachment rate constants and electron drift velocities measured as a function of the density‐normalized electric field E/N. Of particular promise are mixtures of Ar and C3F8.
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52.80.Dy Low-field and Townsend discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
34.70.+e Charge transfer
34.80.Gs Molecular excitation and ionization

Rutherford backscattering, nuclear reaction, and channeling studies of nitrogen implanted single‐crystal stainless steel

J. L. Whitton, M. M. Ferguson, G. T. Ewan, I. V. Mitchell, and H. H. Plattner

Appl. Phys. Lett. 41, 150 (1982); http://dx.doi.org/10.1063/1.93434 (3 pages) | Cited 6 times

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The techniques of channeling and backscattering of MeV He+ ions have been used in conjunction with nuclear reactions on nitrogen‐implanted single crystals of stainless steel in an attempt to find the mechanism responsible for the well documented improvement in mechanical properties of such implanted steels. The nitrogen, as implanted, is found by the 15N( p,α)12C reaction to sit in the octahedral interstitial site. The present results support the suggestion that CrN forms in the implanted layer and could play a role in the improvement in mechanical properties.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Temperature dependence of the growth rate of silicon prepared through chemical vapor deposition from silane

A. M. Beers and J. Bloem

Appl. Phys. Lett. 41, 153 (1982); http://dx.doi.org/10.1063/1.93436 (3 pages) | Cited 42 times

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Below about 650 °C a new region is reported in the temperature dependence of the growth rate of silicon through chemical vapor deposition (CVD) from SiH4 in H2 at atmospheric pressure (Eact = 51 kcal/mole). Emissivity measurements during and after deposition offer experimental evidence for the presence of a hydrogenated layer a‐Si:H near the surface of the growing material. At higher surface temperatures the activation energy (32–38 kcal/mole) depends on the silane partial pressure. The solid growth is amorphous on both sides of the transition, which is governed by the incorporation of hydrogen.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
64.70.K- Solid-solid transitions
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Thermoelectricity in composition‐modulated Cu‐Ni foils

D. Baral and J. E. Hilliard

Appl. Phys. Lett. 41, 156 (1982); http://dx.doi.org/10.1063/1.93437 (3 pages) | Cited 9 times

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Anomalous thermoelectric behavior has been observed in composition‐modulated Cu‐Ni foils. A maximum in the thermo‐emf and its temperature differential was observed at a modulation wavelength of approximately 2.0 nm at which a maximum in the elastic modulus has also been observed.
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72.15.Jf Thermoelectric and thermomagnetic effects
73.61.At Metal and metallic alloys

Empirical study of the metal‐nitride‐oxide‐semiconductor device characteristics deduced from a microscopic model of memory traps

Kia L. Ngai and Yukun Hsia

Appl. Phys. Lett. 41, 159 (1982); http://dx.doi.org/10.1063/1.93438 (3 pages) | Cited 20 times

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A graded‐nitride gate dielectric metal‐nitride‐oxide‐semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase‐write speed, and the retention‐endurance characteristic features.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Oxidation of silicon surfaces by CO2 lasers

I. W. Boyd and J. I. B. Wilson

Appl. Phys. Lett. 41, 162 (1982); http://dx.doi.org/10.1063/1.93439 (3 pages) | Cited 18 times

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We report for the first time, the use of a focussed CO2 laser beam and a controlled oxygen atmosphere to induce localized oxidation on the surface of a silicon wafer. These thin oxide films have been compared by infrared spectrometry with thin furnace‐grown layers. We conclude that the laser‐grown oxides are compositionally similar to conventional layers, and can be described by the formula SiO2. In contrast the half‐width of the Si‐O stretching vibration at 1070 cm−1 was found to be consistently less than for furnace‐grown oxides. By fabricating simple Al‐SiO2‐Si‐Al diodes, the dielectric properties of the films have been studied.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

High conductivity zinc sulfoselenide thin films

Wallace Leigh and Bruce W. Wessels

Appl. Phys. Lett. 41, 165 (1982); http://dx.doi.org/10.1063/1.93440 (3 pages) | Cited 3 times

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High conductivity thin films of ZnSSe have been deposited using hydrogen vapor transport. The films grown on GaAs are single crystalline and have excellent surface morphologies. Resistivities of the as‐grown material ranged from 1 to greater than 103 Ω cm depending upon zinc partial pressure of the growth ambient and sulphur concentration in the film. For a film with a composition of ZnS0.12Se0.88 , a carrier concentration of n = 5×1016 cm−3 and mobility of 126 cm2/Vs were observed.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K

P. C. Zalm and L. J. Beckers

Appl. Phys. Lett. 41, 167 (1982); http://dx.doi.org/10.1063/1.93441 (3 pages) | Cited 55 times

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Epitaxial growth of silicon on Ge (100), Si (100) and Si (111) wafers at substrate temperatures close to 400 K was observed in ion beam deposition experiments under UHV conditions (10−7 Pa). Single‐charged Si+ beams of about 5‐10 μA at an acceleration energy of 50 eV and a 5‐mm‐diam spot size were employed. Purity and crystallinity of the layers formed were checked by Auger electron spectroscopy (AES) and Rutherford high energy electron diffraction (RHEED).
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68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Electron‐beam induced current in GaAs field‐effect transistors

D. S. Newman and D. K. Ferry

Appl. Phys. Lett. 41, 169 (1982); http://dx.doi.org/10.1063/1.93442 (3 pages)

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We have used an electron beam to probe the active region of n‐channel GaAs junction field‐effect transistors. The injected charge leads to a rise in drain current (ΔiD), and static current gains (ΔiD / ΔiB) in excess of 107 are observed. These gains are ∼104 greater than expected from pair production given the incident beam energy (15 kV). It has been previously suggested that the injected charge modifies the surface potential, but we find the major effect to be an effective channel thickness increase. In addition, this channel opening and the current gain saturate at high beam current.
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85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
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