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Applied Physics Letters / Volume 41 / Issue 2

Appl. Phys. Lett. 41, 126 (1982); doi:10.1063/1.93425 (3 pages)

Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit

Israel Ury1, Kam Y. Lau1, Nadav Bar‐Chaim2, and Amnon Yariv2

1Ortel Corporation, Alhambra, California, 91803
2California Institute of Technology, Pasadena, California 91125

A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal‐semiconductor field‐effect transistor on a semi‐insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.

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KEYWORDS and PACS

Keywords

BANDWIDTH, INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, SEMICONDUCTOR LASERS, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, HETEROJUNCTIONS, MODULATION, SUBSTRATES, GHZ RANGE

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.Fc

    Modulation, tuning, and mode locking

  • 42.79.Sz

    Optical communication systems, multiplexers, and demultiplexers

  • 85.40.-e

    Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.93425

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    M. Yust, N. Bar-Chaim, S. H. Izadpanah, S. Margalit, I. Ury, D. Wilt, and A. Yariv, Appl. Phys. Lett. 35, 795 (1979APPLAB000035000010000795000001).

    T. Fukuzawa, M. Nakamura, M. Hirao, T. Kuroda, and J. Umeda, Appl. Phys. Lett. 36, 181 (1980APPLAB000036000003000181000001).

    U. Koren, K. L. Yu, T. R. Chen, N. Bar-Chaim, S. Margalit, and A. Yariv, Appl. Phys. Lett. 40, 643 (1982APPLAB000040000008000643000001).


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