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15 Aug 1982

Volume 41, Issue 4, pp. 307-384

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Measurement of third order nonlinear susceptibilities by surface plasmons

Y. J. Chen and G. M. Carter

Appl. Phys. Lett. 41, 307 (1982); http://dx.doi.org/10.1063/1.93516 (3 pages) | Cited 37 times

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We have developed a novel technique which utilizes the intensity‐dependent dispersion relation of surface plasmons to study the third order nonlinear susceptibility coefficient χ(3). This new technique yields information about both the magnitude and the sign (with respect to χ(1)) of χ(3). Experimental results are reported for GaAs and Si at input wavelengths of 1.05 and 1.11 μm, respectively.
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42.65.-k Nonlinear optics
42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Terraced‐heterostructure large‐optical‐cavity AlGaAs diode laser: A new type of high‐power cw single‐mode device

D. Botez and J. C. Connolly

Appl. Phys. Lett. 41, 310 (1982); http://dx.doi.org/10.1063/1.93517 (4 pages) | Cited 3 times

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A new terraced lateral wave confining structure is obtained by liquid phase epitaxy over channeled substrates misoriented perpendicular to the channels’ direction. Single spatial and longitudinal mode cw operation is achieved to 50 mW from one facet, in large spot sizes (2×7.5 μm, 1/e2 points in intensity) and narrow beams (6°×23°, full width half‐power). At 70 °C ambient temperature cw lasing is obtained to 15 mW from one facet. Weak mode confinement in an asymmetric lateral waveguide provides discrimination against high‐order mode oscillation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Schottky diode mixer for visible laser light and microwave harmonics up to 0.43 THz

H.‐U. Daniel, B. Maurer, M. Steiner, and H. Walther

Appl. Phys. Lett. 41, 313 (1982); http://dx.doi.org/10.1063/1.93518 (3 pages) | Cited 2 times

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An open‐structure W‐GaAs Schottky point‐contact diode was tested as an efficient mixer device for visible laser light and microwave radiation. Beat signals between the lines of a krypton ion laser at 568 nm, and of a dye ring laser and the emission of a backward wave oscillator at 85.4 GHz, showed signal‐to‐noise ratios of 50 dB. Microwave harmonics generated in the same diode could be mixed with the two laser lines up to frequency differences of 430 GHz (i.e., 5th harmonic). A comparison with other mixers for the visible spectral range is given.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.30.+y Surface double layers, Schottky barriers, and work functions
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

Direct detection of vacuum ultraviolet scintillations in liquid helium using germanium photodiodes

Paul N. Luke, Herbert M. Steiner, and E. E. Haller

Appl. Phys. Lett. 41, 315 (1982); http://dx.doi.org/10.1063/1.93519 (3 pages) | Cited 3 times

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Direct detection of vacuum ultraviolet scintillations in liquid helium produced by 5.3 MeV α particles has been accomplished using a high‐purity germanium photodiode. The diode was immersed in the liquid helium and operated in the side‐entry mode with a senstive area of 0.3×1.0 cm. Scintillation from each α particle was detected as a single pulse. A signal rise time <0.1 μs was obtained at an electric field ≳1200 V cm−1. The quantum efficiency of the photodiode was estimated to be ∼4.
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29.40.Mc Scintillation detectors
29.40.Wk Solid-state detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

High energy AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure laser operation

M. D. Camras, N. Holonyak, K. Hess, J. J. Coleman, R. D. Burnham, and D. R. Scifres

Appl. Phys. Lett. 41, 317 (1982); http://dx.doi.org/10.1063/1.93520 (3 pages) | Cited 10 times

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Besides high pressure or bulk crystal composition change, a size‐determined direct‐indirect transition can be obtained in an AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure (QWH), in fact, at higher energy (E∼2.05 eV) than in bulk AlxGa1−xAs (∼1.98 eV). Laser operation is demonstrated at 6700–6500 Å on a QWH grown by metalorganic chemical vapor deposition (MOCVD).
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42.55.Px Semiconductor lasers; laser diodes
71.23.An Theories and models; localized states
75.20.Ck Nonmetals
78.40.Fy Semiconductors

Internal loss of InGaAsP/InP buried crescent (λ = 1.3 μm) laser

Hideyo Higuchi, Hirofumi Namizaki, Etsuji Oomura, Ryoichi Hirano, Yasushi Sakakibara, Wataru Susaki, and Kyoichiro Fujikawa

Appl. Phys. Lett. 41, 320 (1982); http://dx.doi.org/10.1063/1.93521 (2 pages) | Cited 1 time

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The temperature dependence of the internal loss α of the InGaAsP/InP buried crescent laser is presented in the temperature range 20–80 °C. α is about 18 cm−1, and no apparent temperature dependence of α is observed in this temperature range. This indicates that the temperature‐sensitive behavior of the threshold current in InGaAsP/InP long‐wavelength lasers is not due to the temperature dependence of internal loss. The decrease in the external quantum efficiency with increasing temperature is attributed to the decrease in the internal quantum efficiency.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Stress‐induced frequency tuning for stimulated four‐photon mixing in a birefringent single‐mode fiber

Ken‐ichi Kitayama, Shigeyuki Seikai, and Naoya Uchida

Appl. Phys. Lett. 41, 322 (1982); http://dx.doi.org/10.1063/1.93522 (3 pages) | Cited 8 times

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In stimulated four‐photon mixing using a stress‐induced birefringent fiber, the frequency shift of the stimulated emission has been tuned by changing the modal birefringence with an external force applied to the fiber. The frequency shift tuning with the range up to 140 cm−1 has been observed for an external stress of 0.3 kg/cm in the test stress‐induced birefringent fiber.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.25.Lc Birefringence
42.81.-i Fiber optics

Broadband triboluminescence in silica core fiber optic waveguides

A. J. Smiel and T. A. Fischer

Appl. Phys. Lett. 41, 324 (1982); http://dx.doi.org/10.1063/1.93523 (3 pages) | Cited 5 times

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This letter describes the first observation of broadband, shock‐induced luminescence in silica core fiber optic waveguides on a single‐event basis. Spectra recorded with an optical multichannel analyzer suggest that at least two different types of luminescence centers are responsible for this emission. The degree to which each type of luminescence center is created and/or excited is found to depend upon the detailed dynamics of the crushing.
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78.60.Mq Sonoluminescence, triboluminescence
42.79.Gn Optical waveguides and couplers

Fabry–Perot photothermal trace detection

A. J. Campillo, S. J. Petuchowski, Christopher C. Davis, and H‐B. Lin

Appl. Phys. Lett. 41, 327 (1982); http://dx.doi.org/10.1063/1.93524 (3 pages) | Cited 8 times

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A novel trace gas detection scheme based upon the photothermal effect following light absorption is described. The resulting index change, which is proportional to the trace species absorption and concentration, is measured interferometrically in a stabilized Fabry–Perot cavity. An experimental noise limit corresponding to an absorption coefficient of 4×10−8 cm−1/( √Hz) was observed. We discuss possible improvements and estimate the ultimate sensitivities achievable with this technique.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.60.Hv Refractometers and reflectometers
42.60.-v Laser optical systems: design and operation

Imaging antenna array at 119 μm

Dean P. Neikirk, Peter P. Tong, David B. Rutledge, Hyeon Park, and Peter E. Young

Appl. Phys. Lett. 41, 329 (1982); http://dx.doi.org/10.1063/1.93525 (3 pages) | Cited 13 times

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A focal‐plane imaging antenna array has been demonstrated at 119 μm. The array is a line of evaporated silver bow‐tie antennas with bismuth microbolometer detectors on a silicon substrate. Radiation is coupled into the array by a lens placed on the back of the substrate. The bolometers are thermally isolated from the silicon substrate with a half‐micron layer of polyimide. The array performance is demonstrated by coherent imaging of a series of holes at half the diffraction‐limited cut‐off frequency.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
84.40.Ba Antennas: theory, components and accessories
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Charge transport by surface acoustic waves in GaAs

Michael J. Hoskins, Hadis Morkoç, and Bill J. Hunsinger

Appl. Phys. Lett. 41, 332 (1982); http://dx.doi.org/10.1063/1.93526 (3 pages) | Cited 36 times

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The traveling wave potential wells, associated with a surface acoustic wave (SAW) generated in a multilayer epitaxial GaAs structure, are used to transport electrons at the velocity of sound in the buried channel formed by a Schottky‐N‐P layer configuration. A monolithic delay line based on the SAW transport concept is constructed and the time domain response of the delay line is presented. The SAW charge transport concept in GaAs is expected to be useful for the implementation of high‐speed monolithic signal processors.
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43.35.Pt Surface waves in solids and liquids
72.20.Ht High-field and nonlinear effects

Resistance probe for energetic particle dosimetry with applications for plasma edge studies

W. R. Wampler

Appl. Phys. Lett. 41, 335 (1982); http://dx.doi.org/10.1063/1.93527 (3 pages) | Cited 17 times

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Changes in the electrical resistance of thin carbon films caused by implantation with hydrogen, deuterium, and carbon ions were measured for various incident energies and for particle fluences in the range from 1012 to 1017 at./cm2. At low fluences the resistivity change is found to be proportional to the displacement damage caused by the incident particles. A model is presented which can be used to calculate the resistance change which is in good agreement with the measurements. It is proposed that by measuring the resistance change for carbon films exposed to the edge of magnetically confined plasmas the energy and the flux of incident ions and neutral atoms may be determined.
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73.61.-r Electrical properties of specific thin films
61.72.U- Doping and impurity implantation

Large amplitude wave packets of ionization waves

Kazuyuki Ohe

Appl. Phys. Lett. 41, 338 (1982); http://dx.doi.org/10.1063/1.93528 (3 pages) | Cited 2 times

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The temporal and spatial growth rates of large amplitude ionization waves are measured from the evolutions of the wave packets. The group velocity has a constant value for the small amplitudes, while it increases proportionally to the square of wave amplitude for the large amplitudes. The phase velocity at the front of the carrier wave has a similar wave amplitude dependence to that of the group velocity. The velocity at the tail decreases inversely proportionally to the wave amplitude. The increases of the group and phase velocities can be theoretically explained by the nonlinear frequency shift.
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51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams
52.80.Hc Glow; corona

Thermal diffusivity of optical fibers measured by photoacoustics

Dominique Chardon and Serge J. Huard

Appl. Phys. Lett. 41, 341 (1982); http://dx.doi.org/10.1063/1.93505 (2 pages) | Cited 3 times

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We report the first measurement of the thermal diffusivity of an optical fiber using a photoacoustic (PA) technique. The absorption of a modulated light in the fiber core induces heat which diffuses through the optical cladding. The phase delay connected with the PA signal is directly related to the thermal diffusivity χ. We have obtained χ = 1.21×10−7±0.03 m2/s for a standard fiber. Although this value is smaller than the bulk diffusivity of ordinary glasses it has been measured on the real sample which is a drawn material.
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42.79.Gn Optical waveguides and couplers
05.70.Ce Thermodynamic functions and equations of state
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.81.-i Fiber optics

Imaging of domains and grain boundaries in a ferroelectric semiconducting ceramic

J. E. Ralph, J. P. Gowers, and M. R. Burgess

Appl. Phys. Lett. 41, 343 (1982); http://dx.doi.org/10.1063/1.93506 (3 pages) | Cited 4 times

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This letter describes experiments using the scanning electron microscope in the electron beam induced current mode to image ferroelectric domains and grain boundaries in a positive temperature coefficient ceramic. The mechanism responsible for the observed contrast is discussed together with the relevance of the observations to a previously published hypothesis concerning the interaction between domains and grain boundary barriers.
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77.80.Dj Domain structure; hysteresis
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Use of selective annealing for growing very large grain silicon on insulator films

J. P. Colinge, E. Demoulin, D. Bensahel, and G. Auvert

Appl. Phys. Lett. 41, 346 (1982); http://dx.doi.org/10.1063/1.93507 (2 pages) | Cited 52 times

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The selective annealing technique (laser annealing under a patterned antireflecting coating) has been successfully applied to the growth of very large (20×400 μm) silicon single crystals on SiO2. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
79.20.Ds Laser-beam impact phenomena
75.20.Ck Nonmetals
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Low‐dislocation‐density GaAs epilayers grown on Ge‐coated Si substrates by means of lateral epitaxial overgrowth

B‐Y. Tsaur, R. W. McClelland, John C. C. Fan, R. P. Gale, J. P. Salerno, B. A. Vojak, and C. O. Bozler

Appl. Phys. Lett. 41, 347 (1982); http://dx.doi.org/10.1063/1.93508 (3 pages) | Cited 24 times

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Single‐crystal GaAs layers have been obtained by means of lateral epitaxial overgrowth seeded within stripe openings in a SiO2 mask over GaAs layers grown on Ge‐coated Si substrates. Transmission electron microscope and scanning cathodoluminescence studies indicate that the laterally overgrown GaAs layers have a dislocation density of less than 104 cm−2, compared to 107–108 cm−2 for the GaAs layers grown directly on the Ge/Si substrates. Initial experiments indicate that the electrical properties of the laterally overgrown layers are comparable to those of conventional GaAs epilayers grown on single‐crystal GaAs substrates.
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61.72.Lk Linear defects: dislocations, disclinations
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.10.Bk Growth from vapor

Interface chemistry and electrical properties of tungsten Schottky‐barrier contacts to GaAs

J. R. Waldrop

Appl. Phys. Lett. 41, 350 (1982); http://dx.doi.org/10.1063/1.93509 (3 pages) | Cited 23 times

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A correlation between the interface chemistry and the electrical properties of evaporated tungsten Schottky‐barrier contacts to GaAs is made by using data obtained by x‐ray photoemission spectroscopy (XPS), current‐voltage (I‐V), and capacitance‐voltage (C‐V) techniques. A chemical reaction and associated nonabruptness was observed both at ideal (initial clean surface) and at practical (initial native‐oxide covered surface) W‐GaAs interfaces during Schottky‐barrier formation at room temperature. The XPS measured W Schottky‐barrier height for both types of interface is 0.9 eV. I‐V and C‐V measurements were made for a sequence of anneal temperatures up to 650 °C; changes in the contact electrical properties occurred at each temperature. The reactive W contacts are compared to relatively nonreactive Au contacts to GaAs similarly prepared and characterized. The I‐V and C‐V properties of Schottky‐barrier contacts are found to be strongly influenced by the chemistry associated with interface formation.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Measurement of spontaneous emission efficiency and nonradiative recombinations in 1.58‐μm wavelength GaInAsP/InP crystals

Masahiro Asada and Yasuharu Suematsu

Appl. Phys. Lett. 41, 353 (1982); http://dx.doi.org/10.1063/1.93510 (3 pages) | Cited 8 times

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Nonradiative recombination in 1.58‐μm wavelength GaInAsP/InP crystals is discussed with the measured results of the light output saturation and the carrier lifetime of light emitting diodes. Measured results of the spontaneous emission efficiency depend strongly on temperature, and nonradiative recombination is dominant in the carrier lifetime at room temperature. The reciprocal of nonradiative recombination time 1/τNR is expanded into the power series of the carrier density n as Ā+BNRn+Cn2, where the three terms express the nonradiative centers, the carrier overflow, and the Auger recombination, respectively. It is shown that the coefficient C is almost constant for temperature while BNR increases rapidly with increasing temperature, and Ā is negligible. The proportions of the carrier overflow and Auger recombination in the above approximation of 1/τNR are 71 and 29%, respectively, at room temperature at the carrier density of 1×1018 cm−3.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
79.20.Fv Electron impact: Auger emission

Efficient cadmium sulfide on silicon solar cells

R. R. Arya, P. M. Sarro, and J. J. Loferski

Appl. Phys. Lett. 41, 355 (1982); http://dx.doi.org/10.1063/1.93511 (3 pages) | Cited 7 times

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p‐Si/CdS heterojunction solar cells, fabricated by single source evaporation of CdS over silicon at low temperatures (∼175 °C), which have solar power conversion efficiencies up to 11%, measured under simulated AM1 illumination, are described.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Barrier height of Au on n‐GaAs1−xSbx diodes

S. Subramanian, P. A. Murawala, S. S. Chandvankar, and B. M. Arora

Appl. Phys. Lett. 41, 357 (1982); http://dx.doi.org/10.1063/1.93512 (3 pages) | Cited 3 times

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The barrier height of Au‐n‐GaAs1‐xSbx Schottky diodes was measured in the range of Sb compositions 0⩽x<0.2. As x increases from 0 to 0.1, the barrier height decreases by about the same amount as the decrease in the band‐gap energy. For x≳0.1, the decrease in barrier height is less in comparison with the decrease of band gap. This behavior can be related to the ’’defect model’’ of the barrier formation.
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73.30.+y Surface double layers, Schottky barriers, and work functions

Offset channel insulated gate field‐effect transistors

C. Y. Chen, A. Y. Cho, A. C. Gossard, and P. A. Garbinski

Appl. Phys. Lett. 41, 360 (1982); http://dx.doi.org/10.1063/1.93513 (3 pages)

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We report a new insulated gate field‐effect transistor, which has a conducting channel created by the band bending and band edge discontinuity at a selectively doped Al0.3Ga0.7As/GaAs interface rather than at the insulator‐semiconductor interface. The device can be operated both in the depletion mode and in the enhancement mode with a dc transconductance of 18 mmho/mm in both cases (gate length = 5.2 μm). The gate electrode can sustain a positive voltage greater than 2 V. Preliminary results indicate that the idea of offset channel can be of great importance for realizing ultrahigh speed transistors.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Ey III-V and II-VI semiconductors

Lamellar solidification of laser melted Co‐Si films

M. A. Bösch, A. H. Dayem, T. R. Harrison, and R. A. Lemons

Appl. Phys. Lett. 41, 363 (1982); http://dx.doi.org/10.1063/1.93514 (2 pages) | Cited 8 times

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Co‐Si films deposited by coevaporation on silica substrates were melted with a scanned cw argon laser beam. A dramatic phase segregation is exhibited for compositions close to the eutectic composition. The observed morphology is an excellent example of lamellar eutectic solidification and is unusual for these high entropy of melting phases. The lamellae follow the temperature gradient produced by the scanned laser beam and delineate this gradient.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Combined microcrystal and amorphous silicon cells

P. H. Fang, C. C. Schubert, Peiguang Bei, and J. H. Kinnier

Appl. Phys. Lett. 41, 365 (1982); http://dx.doi.org/10.1063/1.93515 (2 pages) | Cited 1 time

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Solar cells have been constructed by depositing a microcrystalline p‐silicon layer on an amorphous i‐n structure. Here p and n denote the type of dopant and i the intrinsic. The silicon layers are formed by electron beam evaporation and doped through the coevaporation of boron for p type and antimony for n type. After hydrogenation by plasma annealing, solar cells are obtained with an open circuit voltage of 540 mV and short circuit current of 5 mA/cm2 under AMl simulated light. The fill factor is 46%.
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84.60.Jt Photoelectric conversion

Investigation of fluorine‐concentration profiles in pulsed‐laser‐irradiated BF+2 ‐implanted silicon single crystals

A. Nylandsted‐Larsen and R. A. Jarjis

Appl. Phys. Lett. 41, 366 (1982); http://dx.doi.org/10.1063/1.93529 (3 pages) | Cited 1 time

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The technique of 19F(p,αγ) 16O resonant nuclear reaction is applied to pulsed‐laser‐irradiated BF+2 ‐implanted silicon single crystals for the determination of fluorine‐concentration profiles by γ‐ray counting. Out‐diffusion of fluorine is observed for all applied laser‐energy densities. For laser‐energy densities typical for complete recrystallization of the damaged surface layer, about 50% of the implanted fluorine is still retained in this layer.
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79.20.Ds Laser-beam impact phenomena
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
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