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1 Sep 1982

Volume 41, Issue 5, pp. 387-494

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Emission spectrum and quenching kinetics of Xe2F∗

W. Walter, R. Sauerbrey, F. K. Tittel, and W. L. Wilson

Appl. Phys. Lett. 41, 387 (1982); http://dx.doi.org/10.1063/1.93549 (3 pages) | Cited 7 times

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Experiments demonstrating the existence of the triatomic rare‐gas excimer Xe2F∗ are reported. Three‐body quenching of XeF∗(B,C) yields Xe2F∗, which radiates around 610 nm with a bandwidth full width at half‐maximum (FWHM) of 120 nm. The two‐body quenching constants of Xe2F∗ by NF3, Xe, and Ar as well as the radiative lifetime of 152 ns are determined.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

New heterojunction InGaAsP/InP laser with high‐temperature stability (T0 = 180 K)

Mitsuhiro Yano, Masahiro Morimoto, Yorimitsu Nishitani, and Masahito Takusagawa

Appl. Phys. Lett. 41, 390 (1982); http://dx.doi.org/10.1063/1.93550 (3 pages) | Cited 3 times

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This letter proposes and demonstrates the operation of a new heterojunction InGaAsP/InP laser, a double‐carrier‐confinement heterojunction (DCC‐heterojunction) laser. This laser is fabricated by incorporating a p‐InGaAsP second well layer into a p‐InP clad layer of the conventional InGaAsP/InP double‐heterojunction laser. With this laser, excellent temperature stability of threshold current [T0 is 180 K in the temperature range of 20–100 °C when threshold current varies with exp(T/T0)] and high external differential quantum efficiency (more than 45% at 100 °C) were achieved. Beam divergence perpendicular to the junction plane was also much improved (less than 25°).
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.Fi Electroluminescence

Ultrafast optoelectronic switching in Blumlein pulse generator

C. S. Chang, V. K. Mathur, M. J. Rhee, and Chi H. Lee

Appl. Phys. Lett. 41, 392 (1982); http://dx.doi.org/10.1063/1.93551 (3 pages)

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Blumlein pulse generator has the potentiality of yielding pulse amplitude equal to the charging voltage. By applying the technique of optoelectronic switching to Blumlein pulse generator, square pulses with ultrafast rise time have been generated. In such cases, the rise time is essentially controlled by the temporal width of the picosecond laser pulse.
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85.60.-q Optoelectronic devices
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
06.60.Jn High-speed techniques (microsecond to femtosecond)

High peak power picosecond light pulses from a directly modulated semiconductor laser

H.‐J. Klein, D. Bimberg, H. Beneking, J. Kuhl, and E. O. Göbel

Appl. Phys. Lett. 41, 394 (1982); http://dx.doi.org/10.1063/1.93552 (3 pages) | Cited 10 times

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We report the generation of short light pulses of 23‐ps duration from an unbiased proton implanted double heterostructure cw laser by direct gain modulation. Repetition frequencies up to 10 MHz and a typical peak power of 300 mW are achieved. The time behavior of the light output is largely independent of the rise and fall time of the modulation current, since the first relaxation oscillation of the laser is utilized.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Isotopes separation experiments in natural UF6 by CF4 and CO2 lasers, analyzed by gamma‐ray spectrometry

G. Koren, Y. Gertner, and U. Shreter

Appl. Phys. Lett. 41, 397 (1982); http://dx.doi.org/10.1063/1.93553 (3 pages) | Cited 8 times

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Multiphoton dissociation of natural UF6 was obtained by simultaneous irradiation with a CF4 laser at 615.2 cm−1 and a transverse, electric, atmospheric (TEA)‐CO2 laser at 1073.3 cm−1 using various gas pressures and laser fluences. The dissociation percentages D235 and D238 of 235UF6 and 238UF6, respectively, were determined by comparing results of an irradiated sample to those of a nonirradiated reference sample prepared under identical conditions. For the analysis we employed a simple, high‐precision nuclear technique based on gamma‐ray spectrometry. The values of D235,D238 and the resulting enrichment factor F = D235/D238 were found from an analysis of the 186‐keV peak, originating in 235U, and the 63‐keV peak, originating in 234Th, the daughter nucleus of 238U. A representative result shows a dissociation of 41±1% and 235U enrichment factor of 1.049±0.016 yielded by the excitation of 0.47 Torr gas by 25 laser pulses at 20‐mJ cm−2 CF4 fluence and 1‐J cm−2 CO2 fluence.
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33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
33.80.Gj Diffuse spectra; predissociation, photodissociation
28.60.+s Isotope separation and enrichment

Self‐heated thermocouples for far‐infrared detection

Dean P. Neikirk and David B. Rutledge

Appl. Phys. Lett. 41, 400 (1982); http://dx.doi.org/10.1063/1.93554 (3 pages) | Cited 9 times

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A novel self‐heated Bi‐Sb thermocouple for far‐infrared detection has been developed. The detector is suitable for integration with monolithic antennas and imaging arrays. The device is fabricated in a single photolithography masking step using a photoresist‐bridge technique. This bridge technique has also been used to make microbolometers with lower 1/f noise than those made by two conventional masking steps. The thermocouples have a noise equivalent power (NEP) of 7×10−10 W/(√Hz) and a 3‐dB frequency response of 150 kHz.
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84.40.Ba Antennas: theory, components and accessories
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

High‐speed ultraviolet and x‐ray‐sensitive InP photoconductive detectors

T. F. Deutsch, F. J. Leonberger, A. G. Foyt, and D. Mills

Appl. Phys. Lett. 41, 403 (1982); http://dx.doi.org/10.1063/1.93555 (3 pages) | Cited 14 times

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The performance of iron‐doped InP photoconductive detectors in the optical and x‐ray spectral regions is compared. The detectors show uniform, high cw quantum efficiency from 900 to 200 nm. Pulse response times at 193 nm are laser source limited to ⩽12 ns. The response to ∼9‐keV‐fast x‐ray pulses indicates device rise times <90 ps.
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85.60.-q Optoelectronic devices
72.80.Ey III-V and II-VI semiconductors

High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750‐Å 300‐K operation

S. W. Kirchoefer, K. Meehan, N. Holonyak, D. A. Gulino, H. G. Drickamer, R. D. Burnham, and D. R. Scifres

Appl. Phys. Lett. 41, 406 (1982); http://dx.doi.org/10.1063/1.93545 (2 pages) | Cited 7 times

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Pressure applied to high performance cw 300‐K bulk‐limit (Lz∼ 600 Å) single quantum well heterostructure AlxGa1−xAs (x∼0.28, λ∼7100 Å) laser diodes is used to simulate composition change and determine the threshold increase at shorter wavelength. Unless small quantum well sizes are employed in more sophisticated designs it is unlikely that λ (for cw 300‐K operation) can be made much less than 6900 Å.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
62.50.-p High-pressure effects in solids and liquids
78.60.Fi Electroluminescence

High‐power Cerenkov maser oscillator

S. Von Laven, J. Branscum, J. Golub, R. Layman, and J. Walsh

Appl. Phys. Lett. 41, 408 (1982); http://dx.doi.org/10.1063/1.93546 (3 pages) | Cited 19 times

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An electron beam driven dielectric‐lined waveguide has produced 30–100 kW of coherent radiation over an octave band on the TM01 mode of the waveguide. Operation of the TM02 mode has been realized as well. Impedance mismatches at the ends of the liner section provide a reflected signal, which undergoes amplification during successive passes.
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32.30.Bv Radio-frequency, microwave, and infrared spectra
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
41.60.-m Radiation by moving charges

Nanosecond modulation at 10 μm by coherent Stark switching

John Wessel

Appl. Phys. Lett. 41, 411 (1982); http://dx.doi.org/10.1063/1.93547 (3 pages)

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Coherent transient Stark switching has been investigated for potential application to low‐power gigahertz modulation at 10 μm. We have observed free‐induction decay and optical nutation in ammonia on a nanosecond time scale. The results suggest that subnanosecond response should be feasible and that the heterodyne beat signal will provide improved modulation depth.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
33.55.+b Optical activity and dichroism
33.57.+c Magneto-optical and electro-optical spectra and effects
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Spatial light modulation using electroabsorption in a GaAs charge‐coupled device

R. H. Kingston, B. E. Burke, K. B. Nichols, and F. J. Leonberger

Appl. Phys. Lett. 41, 413 (1982); http://dx.doi.org/10.1063/1.93548 (3 pages) | Cited 6 times

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High‐speed one‐ and two‐dimensional spatial light modulation may be carried out using the electroabsorption (Franz‐Keldysh) effect in a GaAs buried‐channel charge‐coupled device (CCD). For photon energies slightly lower than the energy gap, the transmission through or along the surface of a CCD structure may be controlled by the signal charge in the wells, through the change of electric field with charge. The modulator is thus electrically addressable and it promises optical quality sufficient for coherent applications. Experimental measurements on a specially designed GaAs CCD structure with semitransparent gates have verified the predicted performance.
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42.79.Hp Optical processors, correlators, and modulators
42.30.Va Image forming and processing
78.20.Jq Electro-optical effects
85.60.-q Optoelectronic devices

Infrared laser‐induced desorption of H2O and hydrocarbons from optical surfaces

Susan D. Allen, J. O. Porteus, and W. N. Faith

Appl. Phys. Lett. 41, 416 (1982); http://dx.doi.org/10.1063/1.93556 (3 pages) | Cited 18 times

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Laser‐induced desorption has been demonstrated for strongly optically absorbing molecules on nominally transparent substrates. Both H2O and hydrocarbon contaminants were desorbed using a pulsed HF/DF laser source at 2.8 and 3.7 μm. Following laser desorption of H2O, the 2.8‐μm damage threshold in CaF2 roughly doubled. Surface mapping of H2O desorption with a 120‐μm‐diam focal spot showed considerable variation with spatial position on polished CaF2, indicating localized concentrations of adsorbate.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.20.Ds Laser-beam impact phenomena
42.62.-b Laser applications
42.70.-a Optical materials

Autoacceleration of high power electron beams

M. Friedman

Appl. Phys. Lett. 41, 419 (1982); http://dx.doi.org/10.1063/1.93557 (3 pages) | Cited 12 times

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The mutual interaction between a 70‐kA intense relativistic electron beam and a passive structure increased the kinetic energy of electrons from 4.2 to 7.4 MeV. This process (known as autoacceleration) should be capable of generating electron beams with even higher particle energy and with currents ≳ 100 kA.
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41.75.Fr Electron and positron beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
29.20.-c Accelerators

Relative energy deposition of electrons in a magnetic guide field

M. W. McGeoch

Appl. Phys. Lett. 41, 422 (1982); http://dx.doi.org/10.1063/1.93558 (3 pages) | Cited 2 times

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The spatial dependence of electron beam deposition was measured for a 320‐kV beam propagating into argon, guided by a magnetic field of 1 kG. Deposition was monitored using the HgBr (B‐X) fluorescence at 502 nm, which is believed to arise from the recombination of HgBr+2.
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41.75.Fr Electron and positron beams
52.50.Dg Plasma sources
34.80.Bm Elastic scattering
34.70.+e Charge transfer

High‐gain air breathing electric discharge CO2 laser

H. Hara and M. Sugii

Appl. Phys. Lett. 41, 425 (1982); http://dx.doi.org/10.1063/1.93559 (2 pages) | Cited 1 time

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The small‐signal gain and the output power of air breathing electric discharge CO2 laser have been measured in the absence of He gas. A maximum gain of 4.9 m−1 was observed at a gas composition of CO2:air = 120:80 (l/min, at normal state), and a 45‐W output power was obtained with an energy conversion efficiency of 5.1%. The corresponding specific power was 7.4 J/g.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Effects of impurities on the characteristics of high‐voltage glow discharges in D2 gas—Application to neutron tubes

C. Saubignac and C. Faure

Appl. Phys. Lett. 41, 427 (1982); http://dx.doi.org/10.1063/1.93560 (2 pages)

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Effects of impurities on the characteristics of high‐voltage glow discharges are theoretically studied. These glow discharges are established during a few microseconds between two plane parallel electrodes separated by a few centimeters under a deuterium pressure of about 0.1 mmHg, at currents of the order of 1–10 A, and voltages of about 100 kV. With tritium‐loaded cathodes, high‐voltage discharge tubes produce neutron pulses. In a one‐dimensional theoretical treatment of the discharge, we take into consideration complex processes: charge exchange, ionization of gas by ions, and ion dissociation. Our model shows that some gaseous impurities increase the neutron emission level. Computed variations of neutron output and discharge characteristics as a function of impurity partial pressure are in good agreement with experimental values.
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29.25.Dz Neutron sources
52.80.Hc Glow; corona

Flash x radiography of laser‐accelerated targets

R. R. Whitlock, S. P. Obenschain, and J. Grun

Appl. Phys. Lett. 41, 429 (1982); http://dx.doi.org/10.1063/1.93561 (3 pages) | Cited 14 times

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Flash x radiography of ablatively accelerated planar foils has provided quantitative measurements and qualitative observations regarding several parameters of critical interest to direct illumination laser fusion. A 1.05‐μ, 3.3‐ns driver beam was focused onto carbon foils in a large (0.7–1‐mm diameter) spot to reduce edge effects. From images produced by a backlighting x‐ray flash, we have measured overall coupling efficiency, smoothing of laser nonuniformities, target velocity, and ablation pressure. The high velocity targets maintain a localized, high density (≳3% of solid). In contrast to other workers’ recent measurement of pressure from x‐ray imaging, our x‐radiographic results, including pressure, are in general agreement with earlier NRL studies. Our results have also provided further insights into double foil interactions and planar target preheat measurements.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Fi Transport properties

Diffusion of fast electrons in the presence of a magnetic field

M. S. Tekula and J. H. Jacob

Appl. Phys. Lett. 41, 432 (1982); http://dx.doi.org/10.1063/1.93562 (3 pages) | Cited 2 times

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The Boltzman equation, for energy deposited by fast electrons in the presence of an applied magnetic field, is solved in the diffuse beam approximation. The solution is obtained by a simple coordinate transformation which is valid both when λ/rL⩽0.25 (λ = mean free path, rL = Larmor radius) and when λ/rL ⩾4.5. The half‐space solution is used to determine the dose in a gas. The theoretical results are compared with experiments. It is found that agreement is better than ∗10% for cases of interest.
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41.75.Fr Electron and positron beams
52.50.Dg Plasma sources
34.80.Bm Elastic scattering
34.70.+e Charge transfer

Percolation‐type behavior in black chrome selective solar films

G. Zajac and A. Ignatiev

Appl. Phys. Lett. 41, 435 (1982); http://dx.doi.org/10.1063/1.93563 (3 pages) | Cited 2 times

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The optical constants (n and k) and dc resistivity have been measured for black chrome particulate solar absorbing coatings for the purpose of defining the applicability of various inhomogeneous medium theories in the description of the black chrome optical response. It has been shown that percolation‐type behavior does exist in the films and hence of the various theories, only those exhibiting percolation at the 0.3 packing fraction value determined for the black chrome films are applicable. The two valid approaches are an effective medium theory first proposed by Bruggeman and a modified Maxwell Garnett theory which includes a particle shape distribution.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Bz Metals and metallic alloys
72.20.-i Conductivity phenomena in semiconductors and insulators
73.61.At Metal and metallic alloys

Effect of substrate surfaces on the formation of nematic phase at the isotropic→nematic transition

Hiroshi Yokoyama, Shunsuke Kobayashi, and Hirotake Kamei

Appl. Phys. Lett. 41, 438 (1982); http://dx.doi.org/10.1063/1.93564 (3 pages) | Cited 45 times

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The effect of substrate surfaces on the formation of the nematic phase at the isotropic→nematic transition of a mixture of 4‐cyano‐4′‐n‐pentylbiphenyl and hexamethyl‐benzene was studied by observing the textures with a polarizing microscope and measuring the birefringence induced by the substrate in the isotropic phase for two typical homogeneous aligning surface treatments: (1) polyvinylalcohol coating followed by rubbing and (2) SiO oblique evaporation. The two treatments resulted in completely different textures at the transition depending on the magnitude of the ordering, or equivalently the birefringence, induced by the substrate in the isotropic phase.
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64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.30.Fb Solidification

Low temperature gettering of Cu, Ag, and Au across a wafer of Si by Al

R. D. Thompson and K. N. Tu

Appl. Phys. Lett. 41, 440 (1982); http://dx.doi.org/10.1063/1.93565 (3 pages) | Cited 42 times

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A set of sandwich structures consisting of a noble metal film of Cu, Ag, or Au on one side of a Si wafer (200 μm thick) and an Al film on the other side was annealed at 540 °C for 100 h to study the gettering of these noble metals across the wafer by Al. Rutherford backscattering spectroscopy was used to analyze the amount of these metals in the Al. A very large quantity of Cu(∼1021 atom/cm3) in the Al film was detected after the annealing but neither Ag nor Au could be found in the Al. The solubility of Cu in Si at 540 °C has been calculated to be 1.7×1014 atom/cm3.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Time correlations of electron and positive ion emission accompanying and following fracture of a filled elastomer

J. T. Dickinson, L. C. Jensen, and M. K. Park

Appl. Phys. Lett. 41, 443 (1982); http://dx.doi.org/10.1063/1.93544 (3 pages) | Cited 11 times

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When filled elastomers fracture intense electron emission (EE) and positive ion emission (PIE) accompany and follow crack propagation, two important components of what we call fracto‐emission. We present here results of simultaneous measurements of EE and PIE from polybutadiene filled with glass beads. These measurements indicate that (a) the EE and PIE decay kinetics are identical, (b) substantial components of EE and PIE are emitted in coincidence, and (c) an excited neutral species is also emitted in coincidence with the EE.
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46.50.+a Fracture mechanics, fatigue and cracks
61.41.+e Polymers, elastomers, and plastics
79.90.+b Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Properties of TiN obtained by N+2 implantation on Ti‐coated Si wafers

A. Armigliato, G. Celotti, A. Garulli, S. Guerri, R. Lotti, P. Ostoja, and C. Summonte

Appl. Phys. Lett. 41, 446 (1982); http://dx.doi.org/10.1063/1.93566 (3 pages) | Cited 6 times

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Titanium nitride films have been prepared by implanting 3.4×1017 cm−2 N+2 ions in 600‐Å‐thick titanium layers deposited on silicon single crystals. Unlike the films obtained by evaporation or sputtering, both low electrical resistivity and fairly good optical properties were found even in the as‐implanted samples. Moreover, thermal treatments up to 700 °C performed both in vacuum and H2 atmosphere resulted in a further improvement of the overall films characteristics. This opens interesting perspectives of applications for TiN as a transparent (antireflective) conducting material in photovoltaic field, which are presently being investigated.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Properties of a GaxIn1−x As‐GaAs isotype heterojunction diode

P. K. Bhattacharya, H. ‐J. Bühlmann, M. Ilegems, P. Schmid, and H. Melchior

Appl. Phys. Lett. 41, 449 (1982); http://dx.doi.org/10.1063/1.93567 (3 pages) | Cited 3 times

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The properties of a n‐n+ GaAs‐Gax In1−x As heterojunction grown by molecular beam epitaxy are described. Current‐voltage and capacitance‐voltage measurements indicate that the junction behaves as a Schottky diode. Significant photoresponse is observed for incident light of wavelength greater than 0.9 μm. Subnanosecond response speeds with full width at half‐maximum (FWHM) of ≃250 ps were measured when the diodes were operated as photodetectors.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

Pulsed x‐ray annealing of ion‐implanted silicon

T. W. Sigmon, D. E. Osias, R. L. Schneider, C. Gilman, and G. Dahlbacka

Appl. Phys. Lett. 41, 452 (1982); http://dx.doi.org/10.1063/1.93568 (3 pages) | Cited 1 time

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Annealing of As ion‐implant‐amorphized 〈100〉 Si using a pulsed imploding plasma x‐ray source is reported. The wafers were exposed to a single 50‐ns pulse of x rays. For wafers annealed in the energy density range 0.3–0.4 J/cm2, Rutherford backscattering and channeling show recovery of the crystallinity of the damaged layer with incorporation of about 86% of the implanted As onto substitutional lattice positions. Movement toward the surface and flattening of the As profile, characteristic of melting, was observed. Transmission electron and optical microscopy and spreading resistance measurements verified low defect levels remaining and uniform surfaces and electrical activity.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
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