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1 Sep 1982

Volume 41, Issue 5, pp. 387-494

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Amorphous‐silicon/silicon‐oxynitride field‐effect transistors

Kouichirou Ishibashi and Masakiyo Matsumura

Appl. Phys. Lett. 41, 454 (1982); http://dx.doi.org/10.1063/1.93569 (3 pages) | Cited 11 times

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The high performance amorphous‐silicon field‐effect transistors were fabricated by applying silicon oxynitride as the gate insulator and high quality amorphous‐silicon film as the active layer. The on‐off current ratio was about 107, and the drain current varied by six orders in magnitude while the gate voltage varied by only 3 V. The field‐effect mobility was as high as 1.9 cm2/V s, which is several times higher than the one reported to date.
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85.30.Tv Field effect devices

Impurity redistribution in Bi‐implanted Si after nanosecond and picosecond Nd laser pulse irradiation

S. U. Campisano, P. Baeri, E. Rimini, A. M. Malvezzi, and G. Russo

Appl. Phys. Lett. 41, 456 (1982); http://dx.doi.org/10.1063/1.93570 (3 pages) | Cited 7 times

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The redistribution in Bi‐implanted Si was measured after irradiation with 25‐ps or 35‐ns Nd laser pulses by channeling effect measurements in combination with MeV He+ backscattering. For both pulse durations some of the Bi accumulated at the surface and the amount of segregation depended on the substrate orientation. The impurity redistribution was similar after nanosecond or picosecond laser pulses thus indicating that the solidification velocities were comparable for the two cases.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Generalized stream function representation for current flow in semiconducting media

Deva N. Pattanayak, Ross A. Williams, and John G. Poksheva

Appl. Phys. Lett. 41, 459 (1982); http://dx.doi.org/10.1063/1.93571 (3 pages) | Cited 2 times

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Stream functions comprised of stream vectors and stream potentials are introduced to represent electron and hole current densities in a semiconductor. These stream functions satisfy electron and hole current continuity equations individually for general cases involving, for example, transient behavior and recombination‐generation processes. The terminal currents are expressed in terms of the stream functions. The nonuniqueness property of the stream functions is discussed briefly.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

New type of thin‐film electroluminescent device having a multilayer structure

Takahiro Suyama, Kenji Okamoto, and Yoshihiro Hamakawa

Appl. Phys. Lett. 41, 462 (1982); http://dx.doi.org/10.1063/1.93532 (3 pages) | Cited 9 times

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A new kind of multilayered thin‐film electroluminescent (EL) device is proposed. The device consists of multiple alternate layers in which the functions of carrier acceleration and light emission are separated. One big advantage of the proposed structure is that the light emitting phosphor can be selected independently of the carrier accelerating material, thus permitting a variety of color emissions. Therefore, one can optimize the device performance by selecting combinations of materials and cell structure design parameters. For example, a device employing ZnS and Y2O3:Eu thin films as the carrier accelerator and light emitter, respectively, emits a red color, and a brightness level of 40‐ft lambert has been obtained under sinusoidal voltage excitation of 5 kHz. This value is several times higher than that reported for EL in powdered layers of Y2O3:Eu.
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85.60.Jb Light-emitting devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Electron mobility enhancement in epitaxial multilayer Si‐Si1−xGex alloy films on (100) Si

H. M. Manasevit, I. S. Gergis, and A. B. Jones

Appl. Phys. Lett. 41, 464 (1982); http://dx.doi.org/10.1063/1.93533 (3 pages) | Cited 25 times

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Enhanced Hall‐effect mobilities have been measured in epitaxial (100)‐oriented multilayer n‐type Si/Si1−xGex films grown on single‐crystal Si substrates by chemical vapor deposition. Mobilities from ∼20 to 40% higher than that of epitaxial Si layers and ∼100% higher than that of epitaxial SiGe layers on Si were measured for the doping range ∼8×1015–∼1017 cm−3. The mobilities of multilayer Si/SiGe films approach that of single‐crystal Si films at ∼2×1017 cm−3. No mobility enhancement was observed in multilayer p‐type (100) films and n‐type (111)‐oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thicknesses, and growth temperature.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects

High quality InP grown by molecular beam epitaxy

W. T. Tsang, R. C. Miller, F. Capasso, and W. A. Bonner

Appl. Phys. Lett. 41, 467 (1982); http://dx.doi.org/10.1063/1.93534 (3 pages) | Cited 23 times

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We report the first high quality InP grown by molecular beam epitaxy (MBE). The undoped InP layers are n type with residual impurity concentrations ∼5×1014–∼5×1015 cm−3. Fine structure attributed to polariton, neutral donor‐exciton (D0–X), neutral donor–hole (D0−h), neutral acceptor–exciton (A0–X) transitions at the exciton edge and neutral donor‐neutral accepton (D0–A0) transitions are clearly resolved in the low‐temperature (5 K) photoluminescence spectra with a linewidth of <1 meV for D0–X as has been observed with high‐purity InP layers grown by other methods. Elemental In and P (red phosphorus) were used as the primary molecular beam sources. The growth temperature has a very significant effect on the quality of the InP layers. The advanced design of the present MBE system employed for growing III‐V compound semiconductors containing P from elemental red phosphorus is also described.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity

B. F. Levine, W. T. Tsang, C. G. Bethea, and F. Capasso

Appl. Phys. Lett. 41, 470 (1982); http://dx.doi.org/10.1063/1.93535 (3 pages) | Cited 22 times

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We have measured for the first time the velocity of minority‐carrier electrons in a heavily doped (p = 2×1018 cm−3) molecular beam epitaxy grown compositionally graded (0.12 eV/μm) AlxGa1−x As layer. The drift velocity is determined to be ve = 2.3×106 cm/s in a quasi‐electric field of 1.2 kV/cm.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Technique for the quantitative measurement of the three‐dimensional distribution of hydrogen in solids

W. A. Lanford and C. Burman

Appl. Phys. Lett. 41, 473 (1982); http://dx.doi.org/10.1063/1.93536 (3 pages) | Cited 1 time

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A technique for measuring full three‐dimensional concentration profiles of hydrogen in solids is proposed and demonstrated. The technique uses the resonant nuclear reaction 15N+1H→12C+4He+gamma ray to probe for hydrogen in thin samples with the 4He particles emitted in forward directions used to form an autoradiograph of the lateral distribution of hydrogen within the sample. Results from a demonstration example of H implanted through a mask into silicon are reported.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP

D. Olego, T. Y. Chang, E. Silberg, E. A. Caridi, and A. Pinczuk

Appl. Phys. Lett. 41, 476 (1982); http://dx.doi.org/10.1063/1.93537 (3 pages) | Cited 94 times

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The band‐gap energy and the electron effective mass of In1−x−yGaxAlyAs lattice matched to InP have been determined as a function of Al content. From photoluminescence measurements we obtain Eg(eV) = (0.76±0.04)+(1.04±0.10)y+(0.87±0.13)y2. The electron effective mass is determined from the plasma frequencies measured with Raman scattering in n‐type samples. Its compositional dependence is given by m∗ = (0.0427±0.0015)+(0.0683±0.0007)y.
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78.40.Fy Semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
78.30.Hv Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Threshold and memory switching in polycrystalline silicon

John E. Mahan

Appl. Phys. Lett. 41, 479 (1982); http://dx.doi.org/10.1063/1.93538 (3 pages) | Cited 4 times

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Both threshold and memory switching have been observed in very high value resistors formed from undoped low pressure chemical vapor deposited (LPCVD) polycrystalline silicon and of a size suitable for microelectronic application. The resistors undergo a reversible, current‐controlled negative resistance transition at a threshold voltage of around 50 V. A slightly higher applied voltage induces the memory switching transition, with a permanent increase in conductance of more than a factor of 106. It is suggested that threshold switching occurs via charge injection that neutralizes grain boundary potential barriers, thereby increasing the carrier mobility. It is probable that the memory switching event is due to the formation of a permanent, relatively conductive filament induced by Joule heating of the material.
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72.20.Ht High-field and nonlinear effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Contactless measurement of Schottky barrier heights using secondary electrons

H.‐C. W. Huang and P. S. Ho

Appl. Phys. Lett. 41, 482 (1982); http://dx.doi.org/10.1063/1.93539 (3 pages) | Cited 1 time

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A contactless technique using electron‐beam‐induced voltage has been developed to measure the barrier heights of Schottky diodes. The method detects the change in the on‐set energy of the secondary electrons using a cylindrical mirror analyzer in a scanning Auger microprobe (SAM). Measurements have been carried out in a Si diode with half‐high‐barrier (platinum) and half‐low‐barrier (titanium) height metal coverage in order to establish the correlation between the measured energy change to the difference in the barrier heights. Using an electron beam of about 1‐μm diameter, a change in the on‐set energy of 50 meV can be detected with a lateral resolution of about 1 μm. The fine‐beam Auger capability of the SAM enables us to identify in situ the local chemistry change responsible for the barrier height variation. This provides a technique with high spatial and energy resolution for investigating the correlation between the interface chemistry and electrical properties of mixed diodes.
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73.30.+y Surface double layers, Schottky barriers, and work functions

AlGaAs inverted strip buried heterostructure lasers

H. Blauvelt, S. Margalit, and A. Yariv

Appl. Phys. Lett. 41, 485 (1982); http://dx.doi.org/10.1063/1.93540 (3 pages) | Cited 1 time

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Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold currents and quantum efficiencies that are comparable to those of conventional buried heterostructure lasers. The optical mode is confined by a weakly guiding strip loaded waveguide which makes possible operation in the fundamental transverse mode for larger stripe widths than is possible for conventional buried heterostructure lasers. Scattering of the laser light by irregularities in the sidewalls of the waveguide, which can be a serious problem in conventional buried heterostructure lasers, is also greatly reduced in these lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Artificial tunnel barriers produced by cryogenically deposited Al2O3

Jagadeesh S. Moodera, R. Meservey, and P. M. Tedrow

Appl. Phys. Lett. 41, 488 (1982); http://dx.doi.org/10.1063/1.93541 (3 pages) | Cited 16 times

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Electron beam evaporated sapphire has been used to form tunnel barriers on substrates cooled to near 77 K. Ni/Al2O3/Al junctions show tunneling characteristics comparable with those obtained by plasma oxidation of Al and the subsequent deposition of Ni. The deposited Al2O3 barriers are stable and usually have insignificant leakage currents. The barrier heights are about 2.5 eV, and Al2O3 does not degrade the spin polarization of tunnel currents (as does oxidized amorphous Si). Au/Al2O3/Al junctions were made with good superconducting tunneling characteristics and with leakage less than 1%. Even Au/Al2O3/Au junctions apparently exhibit good tunneling characteristics.
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73.40.Gk Tunneling
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Optimization of dc SQUID linear amplifiers and the quantum noise limit

C. D. Tesche

Appl. Phys. Lett. 41, 490 (1982); http://dx.doi.org/10.1063/1.93542 (3 pages) | Cited 20 times

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A model for inductively coupled linear amplifier and magnetometer circuits employing superconducting quantum interference devices (dc SQUID’s), which is accurate to all values in the coupling strength, is described. The model explicitly includes the interaction between the input circuit and the dc SQUID. The optimization of the untuned linear amplifier is discussed in detail. The uncertainty principle constraint on the noise temperature of a linear amplifier is shown to place a constraint on the minimum achievable values of the noise figures of an isolated dc SQUID in the quantum noise limit.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Electron paramagnetic resonance study of electric gun induced reactions in the solid state

F. J. Owens

Appl. Phys. Lett. 41, 493 (1982); http://dx.doi.org/10.1063/1.93543 (2 pages)

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A foil flyer plate electric gun device has been used to shock and recover potassium cyanate containing radiation induced paramagnetic molecules. The shock induced reaction of the molecules is monitored as a function of peak shock pressure by electron paramagnetic resonance of the recovered samples.
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61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
61.66.Fn Inorganic compounds
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