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15 Sep 1982

Volume 41, Issue 6, pp. 499-578

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Integrated multilayer GaAs lasers separated by tunnel junctions

J. P. van der Ziel and W. T. Tsang

Appl. Phys. Lett. 41, 499 (1982); http://dx.doi.org/10.1063/1.93585 (3 pages) | Cited 23 times

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An integrated multilayer laser consisting of three double heterostructure GaAs laser diodes connected in series by reversed biased p+n+ tunnel junctions have been grown by molecular beam epitaxy. The lasers operate at currents comparable to single double heterostructure lasers but at approximately three times the single laser voltage.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.-e Optical elements, devices, and systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Uniformity of quantum well heterostructure GaAlAs lasers grown by metalorganic chemical vapor deposition

D. R. Scifres, R. D. Burnham, M. Bernstein, H. Chung, F. Endicott, W. Mosby, J. Tramontana, J. Walker, and R. D. Yingling

Appl. Phys. Lett. 41, 501 (1982); http://dx.doi.org/10.1063/1.93586 (4 pages) | Cited 4 times

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The threshold current density, laser wavelength, grown layer thickness, reverse breakdown voltage, and far‐field radiation pattern as a function of position on the grown wafer are reported for broad area multiple quantum well GaAlAs heterostructure lasers grown by metalorganic chemical vapor deposition. It is found that the layer thickness varies across a 1.5‐in. sample by as much as 20% at the outer edges of the water, leading to a lasing wavelength shift of as much as 150 Å owing to the quantum size effect. It is shown that this thickness variation has only a small effect on the threshold current density across the water such that the uniformity of threshold current density is comparable to that reported previously for molecular beam epitaxy‐grown conventional double heterostructure lasers.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.60.Jb Light-emitting devices
85.30.-z Semiconductor devices

Enhanced nonlinear birefringence in hybrid aligned nematics

G. Barbero and F. Simoni

Appl. Phys. Lett. 41, 504 (1982); http://dx.doi.org/10.1063/1.93587 (3 pages) | Cited 16 times

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See Also: Erratum

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We show that birefringence can be optically induced in hybrid aligned nematic (HAN) liquid crystals at normal incidence for light fields much lower than the Fredericksz threshold. In this case no threshold exists and the nonlinear optical effect at normal incidence is of the same order as that obtained with homeotropic (HOM) cells for the maximum useful angle. An analysis of the effect of the anchoring energy Ws is worked out showing that weak anchoring on the walls enhances the nonlinear effect by one order of magnitude or more.
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42.25.Lc Birefringence
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Improved performance of mini‐repetitively pulsed CO2 lasers using H2 buffered gas mixtures

P. E. Dyer and B. L. Tait

Appl. Phys. Lett. 41, 506 (1982); http://dx.doi.org/10.1063/1.93588 (3 pages) | Cited 7 times

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The improved performance characteristics of a compact pulsed, atmospheric pressure CO2 laser using He‐free, H2 buffered gas mistures are reported. Both peak and average power are found to be optimal with this mixture as a result of an enhanced gain amplitude and rise time. A ∼2.7‐cm3 discharge has produced 17‐W average laser power at ∼300 Hz.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Variation in waveguides fabricated by immersion of LiNbO3 in AgNO3 and TlNO3: The role of hydrogen

J. L. Jackel and C. E. Rice

Appl. Phys. Lett. 41, 508 (1982); http://dx.doi.org/10.1063/1.93589 (3 pages) | Cited 13 times

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Optical waveguides fabricated in LiNbO3 by what has previously been described as silver‐lithium or thallium‐lithium ion exchange in the molten nitrates AgNO3 or TlNO3 have not generally been reproducible. We show that the large increases of the extraordinary index (Δne = 0.12), which are observed intermittently, result not from introduction of the heavy ions, Ag+ or Tl+, but from hydrogen‐lithium exchange, which occurs when hydrogen is present as an impurity in the melts.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.70.-a Optical materials

Ultrasonic‐wave generation by harmonic heating in composite structures

Grover C. Wetsel

Appl. Phys. Lett. 41, 511 (1982); http://dx.doi.org/10.1063/1.93590 (3 pages) | Cited 6 times

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A one‐dimensional theory of the generation of ultrasonic waves by photoacoustic absorption in a composite structure is described. The model consists of a backing material, an absorbing bulk or surface film, and a sample. Variations of ultrasonic amplitude and intensity with structure dimensions, optical absorption coefficient, frequency, and material parameters are discussed and compared with reported experimental data. It was found that the important material group—for both backing and film or sample—is α(D)1/2, where α is effectively a thermal‐expansion coefficient and D is the thermal diffusivity. The relevance of the parameters in the heated volume to imaging is discussed.
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43.20.+g General linear acoustics
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Current density and pressure dependence of XeCl excimer fluorescence and laser emissions observed in a very small volume discharge

Qi‐hong Lou, Qi‐sheng He, and Shao‐Chi Lin

Appl. Phys. Lett. 41, 514 (1982); http://dx.doi.org/10.1063/1.93572 (3 pages) | Cited 4 times

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Some observational results on the XeCl excimer B→X fluorescence and laser emissions from dilute Ne/Xe/HCl mixtures in a very small volume (∼1 cm3) pulsed avalanche discharge of ∼200‐ns duration at high current densities (0.6< j<1.8 kA/cm2) and at high gas pressures (2< p<11 atm) are presented. With increasing  j, p, and Ne dilution, the fluorescence pulse duration becomes more and restricted but the laser peak power continues to show an upward trend until p≊8 atm. In spite of the short pulse and low extraction efficiency, laser peak power of up to ∼10 kW has been observed from the ∼1‐cm3 volume discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Effect of a magnetic filter on the formation and deposition of high‐Z impurities in a multicusp ion source

K. W. Ehlers, K. N. Leung, P. A. Pincosy, and M. C. Vella

Appl. Phys. Lett. 41, 517 (1982); http://dx.doi.org/10.1063/1.93573 (3 pages) | Cited 4 times

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The presence of a magnetic filter in a multicusp ion source reduces the transport of tungsten to the extractor region by forming a uniform plasma potential region in the source chamber. Because of the reduced numbers of primary electrons in the extraction chamber, the plasma grid floats near the plasma potential and this reduces the amount of impurity ions formed from sputtered grid material.
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52.50.Dg Plasma sources
52.55.Jd Magnetic mirrors, gas dynamic traps
52.25.Fi Transport properties
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions

Two‐dimensional interferometric imaging of moving plasma disturbances in the ZT‐40M reversed‐field pinch, using time‐delayed correlation techniques

Abram R. Jacobson and Peter R. Forman

Appl. Phys. Lett. 41, 520 (1982); http://dx.doi.org/10.1063/1.93574 (2 pages) | Cited 9 times

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An eight‐chord interferometer array, together with a single‐chord interferometer separated toroidally by 90°, shows propagating global plasma density disturbances in the final 1 ms prior to discharge termination in ZT‐40M. A time‐delayed correlation technique applied to the nine‐chord data allows reconstruction of the shape of the propagating disturbance and discriminates against competing random density fluctuations.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.55.Ez Theta pinch
52.35.Bj Magnetohydrodynamic waves (e.g., Alfven waves)
52.55.Fa Tokamaks, spherical tokamaks
52.55.Hc Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices

Quasi‐equilibrium beam‐plasma dynamics

R. A. McCorkle

Appl. Phys. Lett. 41, 522 (1982); http://dx.doi.org/10.1063/1.93575 (2 pages)

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Intense charged particle beams in plasmas are subject to current limitation for single beam propagation. The limiting mechanism is excessive self‐focusing due to net current and space‐charge overneutralization effects. A nearly constant minimum plasma impedance of ∼30 Ω is presented to beams with Lorentz factors γ≳1.1.
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52.40.Mj Particle beam interactions in plasmas
52.27.Ny Relativistic plasmas
41.75.Fr Electron and positron beams
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

Characterization of ion implanted and laser annealed polycrystalline Si by a Raman microprobe

S. Nakashima, Y. Inoue, M. Miyauchi, A. Mitsuishi, T. Nishimura, T. Fukumoto, and Y. Akasaka

Appl. Phys. Lett. 41, 524 (1982); http://dx.doi.org/10.1063/1.93576 (3 pages) | Cited 6 times

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The Raman frequency, intensity, and bandwidth of the ion implanted and cw laser annealed polycrystalline Si films have been measured by the Raman microprobe with a spatial resolution of 1 μm. The crystallinity estimated from these quantities changes drastically at the boundary region between the annealed and amorphous regions which is 6∼8 μm in width. The polarization measurement of the Raman scattering enables the estimation of grain size of the annealed region.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.30.Hv Other nonmetallic inorganics

Graphoepitaxy of germanium on gratings with square‐wave and sawtooth profiles

M. W. Geis, B‐Y. Tsaur, and D. C. Flanders

Appl. Phys. Lett. 41, 526 (1982); http://dx.doi.org/10.1063/1.93577 (4 pages) | Cited 10 times

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For Ge crystallized on amorphous SiO2 by a process yielding (111) texture on smooth substrates, in‐plane crystallographic orientation has been obtained by using gratings with square‐wave or sawtooth profiles for orientation. Successive layers of vacuum‐evaporated Cr, Au, and Ge were deposited on heated SiO2 substrates that had been patterned with the gratings. The Ge crystallized on square‐wave gratings had the (111) planes parallel to the substrate surface and the (211) planes parallel to the vertical facets of the gratings. The sawtooth gratings were fabricated with facets meetings at 70.5°, the smallest angle between (111) planes. In this case the (111) planes of the Ge were parallel to the grating facets, the 〈100〉 directions were perpendicular to the substrate and the 〈110〉 directions were parallel to the grating axis.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

First nucleation rule for solid‐state nucleation in metal‐metal thin‐film systems

R. W. Bené

Appl. Phys. Lett. 41, 529 (1982); http://dx.doi.org/10.1063/1.93578 (3 pages) | Cited 44 times

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We extend our previous considerations of low‐temperature phase nucleation in transition metal (Tm) silicon systems to thin‐film metal‐metal systems. We particularly concentrate on the similarities and differences between Tm‐Si (and Tm‐Ge) systems and metal‐metal systems. Most of the metal‐metal low‐temperature reaction data has been previously presented in an article by Campisano, or in the book by Baglin and Poate, which we have reorganized and discussed in terms of a rule for first phase nucleation for these systems. Finally, we suggest a model for Pd80 Si20 glass formation in terms of the general model recently introduced by Phillips.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.35.Md Surface thermodynamics, surface energies

Evidence of intrinsic double acceptor in GaAs

Phil Won Yu, W. C. Mitchel, M. G. Mier, S. S. Li, and W. L. Wang

Appl. Phys. Lett. 41, 532 (1982); http://dx.doi.org/10.1063/1.93579 (3 pages) | Cited 67 times

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Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temperature‐dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p‐type conduction is due to presence of the shallow acceptor CAs and the cation antisite double acceptor GaAs. The first and second ionization energies determined for GaAs are 77 and 230 meV from the valence‐band edge.
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78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors

Morphological fluctuation and electrical properties of sputtered hydrogenated silicon

J. Shirafuji, H. Matsui, A. Narukawa, and Y. Inuishi

Appl. Phys. Lett. 41, 535 (1982); http://dx.doi.org/10.1063/1.93580 (3 pages) | Cited 8 times

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Electrical properties and x‐ray small angle scattering have been measured on rf‐sputtered Si:H alloys deposited at various hydrogen partial pressures of argon and hydrogen mixture gas with a constant total pressure. When the hydrogen partial pressure exceeds 40%, microcrystalline zone of about 200 Å in diameter is formed and photoexcited carriers show nondispersive transport, instead of dispersive transport which is typical of rf‐sputtered a‐Si:H.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Cd Deposition by sputtering

Damage induced through megavolt arsenic implantation into silicon

P. F. Byrne, N. W. Cheung, and D. K. Sadana

Appl. Phys. Lett. 41, 537 (1982); http://dx.doi.org/10.1063/1.93581 (3 pages) | Cited 26 times

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An arsenic beam of 11 MeV was used to achieve a layer of heavily doped silicon centered at 4.4 μ below the surface. Both liquid nitrogen and water‐cooled (100) silicon substrates were exposed to an arsenic dose of 1.9×1015 ions/cm2. Before furnace annealing, cross‐sectional transmission electron microscopy (XTEM) shows buried amorphous regions for both samples with a wider amorphous region for the LN‐cooled sample. The depth distribution of secondary defects on subsequent annealing qualitatively resembles those obtained by lower energy implantation, and the details depend strongly on the substrate temperature during implantation. Secondary ion mass spectrometry (SIMS) was used to verify LSS calculations for the arsenic distribution.
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61.80.Jh Ion radiation effects

Mobility enhancement in modulation‐doped GaAs/AlAs heterostructures grown by molecular beam epitaxy

W. I. Wang

Appl. Phys. Lett. 41, 540 (1982); http://dx.doi.org/10.1063/1.93582 (3 pages) | Cited 4 times

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Modulation‐doped GaAs/AlAs heterojunctions have been successfully grown for the first time. Liquid nitrogen electron mobility in excess of 100 000 cm2 V−1 s−1 has been obtained at a sheet electron concentration of 3.27×1011 cm−2. The interface properties studied by reflection electron diffraction are consistent with results of electrical measurement. The advantages of modulation‐doped structures with high aluminum concentrations are discussed.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface

P. M. Lenahan and P. V. Dressendorfer

Appl. Phys. Lett. 41, 542 (1982); http://dx.doi.org/10.1063/1.93583 (3 pages) | Cited 64 times

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Electron spin resonance measurements have been made on gamma‐irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation‐induced paramagnetic Pb centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation‐induced interface states.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
76.30.Mi Color centers and other defects

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition

R. P. Gale, R. W. McClelland, John C. C. Fan, and C. O. Bozler

Appl. Phys. Lett. 41, 545 (1982); http://dx.doi.org/10.1063/1.93584 (3 pages) | Cited 16 times

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Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than 5 have been obtained. The lateral growth is due to surface‐kinetic control for the two‐dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 μm thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Optical switching in semiconductor organic thin films

R. S. Potember, T. O. Poehler, and R. C. Benson

Appl. Phys. Lett. 41, 548 (1982); http://dx.doi.org/10.1063/1.93591 (3 pages) | Cited 83 times

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Semiconducting organometallic films such as copper tetracyanoquinodimethane (CuTCNQ) have been observed to switch between two stable states when exposed to optical radiation. Observations of switching between two states in these films have been made by Raman spectroscopic methods and direct observation of electrical resistance changes. Line or pattern generation is observed for exposure above certain threshold levels. These effects are observed in a wide range of Cu and Ag organometallic compounds.
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72.80.Le Polymers; organic compounds (including organic semiconductors)
78.30.Jw Organic compounds, polymers
85.60.-q Optoelectronic devices
72.60.+g Mixed conductivity and conductivity transitions

High‐efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnects

M. J. Ludowise, R. A. LaRue, P. G. Borden, P. E. Gregory, and W. T. Dietze

Appl. Phys. Lett. 41, 550 (1982); http://dx.doi.org/10.1063/1.93592 (3 pages) | Cited 9 times

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A two‐junction solar cell has been fabricated using an Al0.30Ga0.70As (1.82 eV) tap cell and a GaAs (1.43 eV) bottom cell. A processed metal interconnect is used to connect the two cells together in series. An efficiency of 21.5% at 980 mW/cm2 has been measured in a solar simulator with an open circuit voltage of 2.35 V, a short circuit current of 118.6 mA/cm2, and a fill factor of 0.76. An efficiency of 22% has been measured under 130 AM3 sun in a solar tracking concentrator. Organometallic vapor phase epitaxy is used to grow the entire nine‐layer device.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Forming ohmic contacts in CdSe thin‐film transistors by dc sputter etching

F. C. Luo, E. C. Freeman, J. H. Slowik, and M. Poleshuk

Appl. Phys. Lett. 41, 552 (1982); http://dx.doi.org/10.1063/1.93593 (3 pages)

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dc sputter etching is used in the photolithographic fabrication of CdSe thin‐film transistors to clean the interfaces between Cr or Cr‐Au source‐drain contacts and CdSe. To evaluate the effects, the devices are tested by both I‐V characteristics and transient‐reponse‐charge injection measurements. The results indicate that dc sputter etching improves the contacts significantly. The charge injection of cleaned contacts approaches the theoretical maximum (ohmic) value.
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73.40.Ns Metal-nonmetal contacts
73.61.At Metal and metallic alloys
73.40.Jn Metal-to-metal contacts
85.30.Tv Field effect devices

Cathodoluminescence evaluation of dark spot defects in InP/InGaAsP light‐emitting diodes

A. K. Chin, C. L. Zipfel, S. Mahajan, F. Ermanis, and M. A. DiGiuseppe

Appl. Phys. Lett. 41, 555 (1982); http://dx.doi.org/10.1063/1.93602 (3 pages) | Cited 13 times

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In this study, the formation of dark spot defects (DSD’s) in InP/InGaAsP light‐emitting diodes (LED’s) is evaluated by cathodoluminescence imaging and energy dispersive x‐ray spectroscopy (EDS). Defects resulting in DSD’s are shown to be located in either the p‐InGaAsP contact layer, the p‐InP confining layer, or the InGaAsP active layer. The presence of gold was not detected at the DSD’s using EDS. However, gold was found in the form of submicron‐sized inclusions in the contact layer and confining layer of cylindrically lapped wafers using EDS. Our results strongly suggest that the migration of gold from the p contact during device processing and aging results in the formation of DSD’s in InP/InGaAsP LED’s.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence

New analysis of field‐effect conductance in hydrogenated amorphous silicon thin‐film transistors

Sanboh Lee and Inan Chen

Appl. Phys. Lett. 41, 558 (1982); http://dx.doi.org/10.1063/1.93594 (3 pages) | Cited 4 times

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The field‐effect conductance of hydrogenated amorphous silicon thin‐film transistors has been calculated as a function of the gate voltage. This analysis differs from the existing ones in taking into account (1) the space charge due to excess free carriers, in addition to that caused by modulation of bulk localized state occupancy, and (2) the charge in the surface states in the determination of the boundary condition. Numerical results are presented to demonstrate the significance of these effects.
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85.30.De Semiconductor-device characterization, design, and modeling
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Deep levels in cw laser‐crystallized silicon thin films

N. M. Johnson, M. D. Moyer, and L. E. Fennell

Appl. Phys. Lett. 41, 560 (1982); http://dx.doi.org/10.1063/1.93595 (4 pages) | Cited 5 times

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Electronic defect levels in cw laser‐crystallized silicon thin films have been measured with deep level transient spectroscopy. Polycrystalline silicon thin films were deposited on thermal oxides over single‐crystal silicon and crystallized with a scanning cw Ar‐ion laser. Hole‐emission spectra, recorded on inverted metal‐oxide‐silicon capacitors with p‐type conductivity, reveal a continuous distribution of deep levels in the lower‐half of the silicon band gap. There is no evidence of discrete energy levels with densities ⩾1×1014 cm−3, and its proposed that defect levels at the Si‐SiO2 interface are a major source of emission centers in crystallized silicon thin films, along with grain boundaries which can also contribute a continuous defect distribution.
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78.40.Fy Semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
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