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15 Sep 1982

Volume 41, Issue 6, pp. 499-578

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Use of a GaAs smoothing layer to improve the heterointerface of GaAs/AlxGa1−xAs field‐effect transistors

W. Kopp, S. L. Su, R. Fischer, W. G. Lyons, R. E. Thorne, T. J. Drummond, H. Morkoç, and A. Y. Cho

Appl. Phys. Lett. 41, 563 (1982); http://dx.doi.org/10.1063/1.93596 (3 pages) | Cited 8 times

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The effect of a GaAs smoothing layer on the performance of GaAs/AlxGa1−xAs field‐effect transistors prepared by molecular beam epitaxy was investigated. The GaAs smoothing layer was inserted between the channel layer and the AlxGa1−xAs buffer layer in an attempt to reduce the dependence of interface quality on growth conditions. Current‐voltage characteristics of field‐effect transistors with 1‐μm gate lengths were used to characterize the properties of the heterointerface. Without the GaAs smoothing layer, extremely sharp interfaces, as indicated by the electron velocity, were obtained when the structures were grown at 700 °C. However, the interface sharpness was very sensitive to growth conditions and in particular to the substrate temperature, decreasing from 50 Å at 700 °C to 70 Å at 640 °C and to 260 Å at 580 °C. Incorporation of a 200‐Å‐thick undoped GaAs smoothing layer at the heterointerface decreased this sensitivity to growth conditions. With the smoothing layer, interface sharpnesses of 150, 60, and 50 Å were obtained for substrate temperatures of 580, 630, and 700 °C, respectively.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Low‐frequency behavior of coupled Josephson junctions near phase locking

A. K. Jain, K. K. Likharev, J. E. Lukens, and J. E. Sauvageau

Appl. Phys. Lett. 41, 566 (1982); http://dx.doi.org/10.1063/1.93597 (3 pages) | Cited 2 times

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It is shown that the external behavior of a cell of two interacting Josephson junctions in the vicinity of phase locking is quantitatively the same as that of a single equivalent resistively shunted junction operated at the difference frequency of the two interacting junctions, as predicted by perturbation theory. Steps of constant voltage difference closely obeying the familiar Bessel dependence are observed when an external current with a frequency equal to the difference of the two Josephson frequencies is applied.
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74.50.+r Tunneling phenomena; Josephson effects

Far‐infrared electron spin resonance of ruby in very high magnetic fields

G. Kido and N. Miura

Appl. Phys. Lett. 41, 569 (1982); http://dx.doi.org/10.1063/1.93598 (3 pages) | Cited 2 times

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Electron spin resonance (ESR) of ruby was observed in the far‐infrared range at 336.6‐ and 118.6‐μm wavelengths under very high magnetic fields in the megagauss range. It was confirmed that the g factor is constant up to a megagauss. Thus the ESR of ruby proved to be a good means for calibrating the ultrahigh magnetic fields.
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76.30.-v Electron paramagnetic resonance and relaxation

Supersonic gas shell for puff pinch experiments

Richard S. Smith, Wesley O. Doggett, I. Roth, and Charles Stallings

Appl. Phys. Lett. 41, 572 (1982); http://dx.doi.org/10.1063/1.93599 (2 pages) | Cited 11 times

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An easy‐to‐fabricate, conical, annular supersonic nozzle has been developed for use in high‐power, puff gas z‐pinch experiments. A fast responding conical pressure probe has also been developed as an accurate supersonic gas flow diagnostic for evaluating the transient gas jet formed by the nozzle. Density profile measurements show that the magnitude and radial position of the gas annulus are fairly constant with distance from the nozzle, but the gas density in the center of the annulus increases with distance from the nozzle.
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61.05.C- X-ray diffraction and scattering
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Technique for the inversion of backscattered elastic wave data to extract the geometrical parameters of defects with varying shape

F. Cohen‐Tenoudji, B. R. Tittmann, and G. Quentin

Appl. Phys. Lett. 41, 574 (1982); http://dx.doi.org/10.1063/1.93600 (3 pages)

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A technique is described for the inversion of elastic scattering data in order to extract the geometrical properties of a scatterer embedded in a solid. The technique is in part based on the Kirchhoff approximation. Results are presented for the inversion of theoretical and experimental scattering data for a variety of shapes including spherical, ellipsoidal, and disc‐shaped voids as well as a compound void consisting of two overlapping spherical voids of different radii.
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02.70.-c Computational techniques; simulations

Self‐developing photoetching of poly(ethylene terephthalate) films by far‐ultraviolet excimer laser radiation

R. Srinivasan and V. Mayne‐Banton

Appl. Phys. Lett. 41, 576 (1982); http://dx.doi.org/10.1063/1.93601 (3 pages) | Cited 319 times

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Radiation of 193‐nm (ArF excimer laser) wavelength can cause the etching of surfaces of poly(ethylene terephthalate) (PET) films in a controlled manner without any subsequent processing. Etch rates of 1200 Å/pulse of 370 mJ/cm2 were realized in air. The reaction can be attributed to (ijk) the high absorption cross section of the films for the radiation which results in the energy being trapped in the first 2700 Å, (ii) the high efficiency for bond breaking at these photon energies, and (iii) the formation of numerous small fragment molecules which promotes their volatization. The process is observed in a vacuum but is considerably modified in the presence of air.
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79.20.Ds Laser-beam impact phenomena
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
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