APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Oct 1982

Volume 41, Issue 7, pp. 583-674

Page 1 of 2 Pages Next Page | Jump to Page

Aging tests of low threshold current InGaAsP/InP V‐grooved substrate buried heterostructure lasers emitting at 1.3‐μm wavelength

Hajime Imai, Hiroshi Ishikawa, Ken‐ichi Hori, and Ken‐ichiro Takahei

Appl. Phys. Lett. 41, 583 (1982); http://dx.doi.org/10.1063/1.93616 (2 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Aging tests of InGaAsP/InP V‐grooved substrate buried heterostructure lasers have performed. The cw threshold current of these lasers is around 20 mA at 25 °C. The laser are tested at 10, 50, and 70 °C with a constant optical power of 5 mW/facet and are still operating at over 5000 h with only a slight increase in the driving current. The far‐field pattern and lasing spectrum do not change appreciably during aging, and self‐pulsation is not observed after aging.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Laser emission from stimulated spin‐flip Raman scattering in (Cd,Mn)Se

D. Heiman

Appl. Phys. Lett. 41, 585 (1982); http://dx.doi.org/10.1063/1.93617 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Stimulated spin‐flip Raman scattering has been observed in the semimagnetic semiconductor Cd1−xMnxSe. g values as large as 170 were observed, allowing the spin‐flip frequency to be tuned by 20 meV with magnetic fields below B = 30 kG. A threshold intensity of less than 1 MW/cm2 was found. This threshold varies rapidly with pump wavelength, and peaks near the donor‐bound exciton energy. The tunability and gain coefficient are comparable to those in narrow‐gap semiconductors, such as InSb and (Hg,Cd)Te, under nonresonant conditions. Laser action is achieved for longitudinal pumping.
Show PACS
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ls Magneto-optical effects

High‐power low‐divergence superradiance diode

C. S. Wang, W. H. Cheng, C. J. Hwang, W. K. Burns, and R. P. Moeller

Appl. Phys. Lett. 41, 587 (1982); http://dx.doi.org/10.1063/1.93618 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Using a combination of antireflection coating and proton implantation techniques, GaAlAs double‐heterostructure lasers are fabricated to operate in superradiant mode. Light output, in excess of seven milliwatts, is obtained with spectral half‐power widths of 15–20 nm. This implies extremely short coherence lengths of less than 50 μm. Such a short coherence length light source should be very useful for many applications in fiber sensors and fiber optic communications. In particular, it has produced marked reduction (better than 15 dB) of coherent Rayleigh backscattering noise in a single‐mode fiber. Since the laser operates in superradiant mode, the output light is only partially polarized, another unique characteristic that is important for fiber gyroscopes. The typical light output angle of 30°×50° also provides easy coupling into fibers. Coupling efficiencies of 80% into multimode fiber and over 20% into single‐mode fiber have been achieved.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.40.Fy Semiconductors

Four‐wave mixing via optically generated free carriers in Hg1−xCdxTe

S. Y. Yuen

Appl. Phys. Lett. 41, 590 (1982); http://dx.doi.org/10.1063/1.93619 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Four‐wave mixing experiments are used to study the variation of the third‐order susceptibility χ(3), with frequency difference Δω and laser intensity I in low carrier concentration HgCdTe crystals. At small Δω, χ(3) is caused by nonparabolicity of free electrons generated by two‐photon absorption, with χ(3) scaling as Δω−1 and I2/3. The Δω variation of χ(3) indicates that the electron thermalization time is longer than 8 ps. At large Δω, χ(3)≃3×10−8 esu is mainly due to bound electrons.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.40.-i Holography

Frequency synchronization and phase locking of CO2 lasers

Walter R. Leeb, Heinz K. Philipp, Arpad L. Scholtz, and Ernst Bonek

Appl. Phys. Lett. 41, 592 (1982); http://dx.doi.org/10.1063/1.93620 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Employing the principle of a phase‐locked loop (PLL) we have synchronized the frequency and phase of two CO2 lasers. The laser acting as voltage controlled oscillator is tuned both by electro‐optic and piezoelectric means. A cooled photodiode serves as the phase detector. The main loop parameters, natural frequency ωn and damping factor ζ, have been measured. The small phase jitter in the error signal obtained will allow application of such an optical PLL in homodyne receivers at 10 μm.
Show PACS
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.By Design of specific laser systems

Optical absorption coefficient of silicon at 1.152 μ at elevated temperatures

G. E. Jellison and D. H. Lowndes

Appl. Phys. Lett. 41, 594 (1982); http://dx.doi.org/10.1063/1.93621 (3 pages) | Cited 67 times

Full Text: | Download PDF

Show Abstract
The optical absorption coefficient of silicon has been measured at the HeNe near‐infrared line (λ = 1.152 μm) from room temperature to 1140 K. The results are compared with the previous less extensive data in the literature, and with the formulation given by Macfarlane et al. [Phys. Rev. 111, 1245 (1958)]. It is found that the absorption is described very well by phonon‐assisted indirect transitions across an energy gap having the temperature dependence described by Thurmond.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors

Frequency stabilization of a diode laser by use of the optogalvanic effect

Shizuo Yamaguchi and Masao Suzuki

Appl. Phys. Lett. 41, 597 (1982); http://dx.doi.org/10.1063/1.93622 (2 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The frequency of an AlGaAs diode laser has been stabilized to the center frequency of the optogalvanic signal corresponding to the 4s′01–4p12 (Racah notation) transition of Ar I at 8408.2094 Å. The first derivative curve of the line was used as the error signal to be fed back to the operating current source of the diode laser. Fluctuation of the laser frequency was within 200 kHz for several hours.
Show PACS
42.62.-b Laser applications
42.72.-g Optical sources and standards

Picosecond optical electronic sampling: Characterization of high‐speed photodetectors

D. H. Auston and P. R. Smith

Appl. Phys. Lett. 41, 599 (1982); http://dx.doi.org/10.1063/1.93612 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
A photoconducting sampling gate which is triggered by a picosecond optical pulse and has an aperture of approximately 12 ps has been used to measure accurately the response of a high‐speed, solid‐state photodiode. The sample gate, which is made from a radiation‐damaged semiconductor, is demonstrated to have better speed, lower noise level, negligible jitter, and fewer reflections than conventional sampling oscilloscopes. In addition, it can be used over a wide temperature range by direct mounting in a variable temperature cryostat.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors

Extended gas lifetime operation of a miniature transversely excited atmosphere CO2 laser doped with tripropylamine

R. Marchetti, E. Penco, E. Armandillo, and G. Salvetti

Appl. Phys. Lett. 41, 601 (1982); http://dx.doi.org/10.1063/1.93613 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Long life (≳106 shots), sealed operation of a repetitively pulsed (4 pps), compact (5‐cm3 active volume), transversely excited atmosphere (TEA) CO2 laser has been achieved using an efficient corona‐type preionization and traces of tripropylamine (TPA) as gas additive. The use of TPA has enabled extended operation with a maximum output peak power of about 350 kW.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Observation of optical signatures of materials

I. J. Cox, D. K. Hamilton, and C. J. R. Sheppard

Appl. Phys. Lett. 41, 604 (1982); http://dx.doi.org/10.1063/1.93614 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
A new technique for the study of surfaces is described, whereby materials with different optical properties may be identified from characteristic responses, and which may be developed to give measurements of the optical properties. The technique is similar to one already used in acoustic microscopy.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Proton exchange for high‐index waveguides in LiNbO3

J. L. Jackel, C. E. Rice, and J. J. Veselka

Appl. Phys. Lett. 41, 607 (1982); http://dx.doi.org/10.1063/1.93615 (2 pages) | Cited 268 times

Full Text: | Download PDF

Show Abstract
We describe the fabrication and characterization of optical waveguides formed in LiNbO3 by proton exchange in benzoic acid melts at 200–250 °C. Proton exchange, in LiNbO3 the replacement of lithium ions with protons, takes place when the substrate is immersed in the molten acid. We observe a surface increase in the refractive index of 0.12, for the extraordinary polarization only, with a step function index profile. This is the highest index increase obtainable to date for LiNbO3. Measured diffusion rates for x‐cut crystals are 1.37 μm2/h at T = 249 °C and 0.37 μm2/h at T = 217 °C, so that very deep guides can be formed in short times. Diffusion is somewhat slower in the z direction. The process as described is not useful for y‐cut crystals, since it damgaes this surface. Losses, measured on x‐cut samples, were <0.5 dB/cm. All measurements were made at 0.633 μm.
Show PACS
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.70.-a Optical materials

Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate

M. Oron, N. Tamari, H. Shtrikman, and C. A. Burrus

Appl. Phys. Lett. 41, 609 (1982); http://dx.doi.org/10.1063/1.93623 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The lasing properties of InGaAsP crescent‐shape mesa substrate buried heterojunction (CMSB) lasers emitting at 1.3 μm are described. Threshold currents as low as 20 mA have been observed with a temperature sensitivity T0 = 97 °C. An external differential quantum efficiency (two facets) of up to 54% was observed. This combination of the characteristics is directly attributed to the device structure which is specially designed to decrease lateral leakage current. Single transverse and longitudinal mode operation was realized with output powers of at least 5 mW per facet.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices

High‐power nitrogen laser

E. Armandillo and A. J. Kearsley

Appl. Phys. Lett. 41, 611 (1982); http://dx.doi.org/10.1063/1.93624 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
The design and performance of a discharge excited N2 laser which can produce pulses of 337‐nm radiation with peak powers in excess of 5 MW and durations of 4 ns [full width at half‐maximum (FWHM)] are described. The output beam is reproducible, uniform, and of large (25×35 mm) cross section. The peak value of the radiance is greater than 3×1011 Wsr−1.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Lateral beam collimation of a phased array semiconductor laser

D. Scifres, R. D. Burnham, W. Streifer, and M. Bernstein

Appl. Phys. Lett. 41, 614 (1982); http://dx.doi.org/10.1063/1.93625 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
The lateral near‐field and far‐field radiation patterns of a phase‐locked array of gain‐guided semiconductor injection lasers are studied. These lasers exhibit a lateral far‐field beam divergence full width at half‐maximum (FWHM) of 1.5° up to 200 mW of output power per facet. Greater than 60% of the laser output power is concentrated in a low divergence beam at this high optical power. Catastrophic mirror degradation of the laser occurs at ≊250–270 mW cw per facet.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.62.-b Laser applications
42.82.-m Integrated optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Passive stabilization scheme for fiber interferometers using (3×3) fiber directional couplers

K. P. Koo, A. B. Tveten, and A. Dandridge

Appl. Phys. Lett. 41, 616 (1982); http://dx.doi.org/10.1063/1.93626 (3 pages) | Cited 40 times

Full Text: | Download PDF

Show Abstract
A passive stabilization scheme using a (3×3) fiber directional coupler in an all fiber Mach–Zehnder interferometer and suitable signal processing has been successfully demonstrated. A stable output with large signal dynamic range and a minimum detectable phase shift in the microradian range has been achieved.
Show PACS
07.60.Ly Interferometers

Frequency tuning for stimulated four‐photon mixing by bending‐induced birefringence in a single‐mode fiber

Ken‐ichi Kitayama and Masaharu Ohashi

Appl. Phys. Lett. 41, 619 (1982); http://dx.doi.org/10.1063/1.93627 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A new type of frequency tuning for stimulated four‐photon mixing is demonstrated using bending‐induced birefringence in a single‐mode fiber. It is experimentally verified that the frequency shift of the Stokes emission is tuned by approximately 100 cm−1 via the bending‐induced birefringence in the spectral region around 1 μm. This will provide a new application of a birefringent fiber to a optical frequency generator.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.25.Lc Birefringence
42.81.-i Fiber optics

Transducer effects in acoustic scattering measurements

Richard K. Johnson and A. J. Devaney

Appl. Phys. Lett. 41, 622 (1982); http://dx.doi.org/10.1063/1.93628 (3 pages)

Full Text: | Download PDF

Show Abstract
An expression for the electrical input‐output response of a circularly symmetric reciprocal electroacoustic transducer is developed for the case of scattering from a layered elastic half‐space aligned perpendicular to the transducer axis. The model represents the acoustical output and input of the transducer as angular spectra of plane waves. The expression is in the form of a one‐dimensional integral transform (over angles of incidence) of the reflection coefficient for the half‐space and is valid for arbitrary separation distances. Good agreement between calculation and measurement is obtained for the case of reflection from an elastic plate.
Show PACS
43.20.Fn Scattering of acoustic waves
43.30.Yj Transducers and transducer arrays for underwater sound; transducer calibration
43.30.Jx Radiation from objects vibrating under water, acoustic and mechanical impedance
43.38.Ar Transducing principles, materials, and structures: general

Spot‐size dependence of laser‐induced damage to diamond‐turned Cu mirrors

C. S. Lee, N. Koumvakalis, and M. Bass

Appl. Phys. Lett. 41, 625 (1982); http://dx.doi.org/10.1063/1.93629 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
A comparison of single and multiple pulse damage fluxes for oxygen‐free high‐conductivity (OFHC) diamond‐turned Cu at 1.06 and 10.6 μm shows opposite trends in spot‐size dependence. The single pulse damage threshold decreases or remains constant with increasing spot size in the range of sizes used (50–250 μm), but the multiple pulse threshold increases. However, both appear to have the same value in the limit of large spot size. These data suggest that the two phenomena are the result of different mechanisms. Models consistent with the data are discussed.
Show PACS
62.20.M- Structural failure of materials
62.20.F- Deformation and plasticity
79.20.Ds Laser-beam impact phenomena
42.70.-a Optical materials

Profiling of deep impurities by persistent photocurrent measurements

D. E. Theodorou, H. J. Queisser, and E. Bauser

Appl. Phys. Lett. 41, 628 (1982); http://dx.doi.org/10.1063/1.93630 (2 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
A method to obtain the volume density Z of deep impurities in semiconductors versus their spatial depth is described. Z is derived by measuring the increase of the photoinduced persistent sheet density of carriers Δ(nd) in a conductive layer as a function of incident photon dose Q. The slope of the Δ(nd) =  f(log Q) curve depends upon the concentration profile of the deep traps in the substrate beneath the conductive layer, as is demonstrated by experiments using GaAs.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
72.80.Ey III-V and II-VI semiconductors

Time‐resolved measurements of stimulated surface polariton wave scattering and grating formation in pulsed‐laser‐annealed germanium

D. J. Ehrlich, S. R. J. Brueck, and J. Y. Tsao

Appl. Phys. Lett. 41, 630 (1982); http://dx.doi.org/10.1063/1.93631 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
Nanosecond resolution optical probe measurements of the growth of surface ripples in pulsed‐laser‐annealed Ge are reported. The ripples are shown to arise from stimulated scattering of the incident laser light into surface polariton waves at the air/liquid/solid interfaces which form during the optical excitation. These surface waves grow exponentially from spontaneous scattering via feedback involving modulation of the velocity of the liquid/solid interface. The final ripple structure results from the density change on melting coupled with transverse diffusional processes during the regrowth.
Show PACS
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
78.66.Bz Metals and metallic alloys
79.20.Ds Laser-beam impact phenomena
81.40.Tv Optical and dielectric properties related to treatment conditions

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

M. Feng, V. K. Eu, I. J. D’Haenens, and M. Braunstein

Appl. Phys. Lett. 41, 633 (1982); http://dx.doi.org/10.1063/1.93632 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Low‐noise GaAs metal‐semiconductor field‐effect transistors (MESFET’s) have been made using molecular beam epitaxy. A noise figure of 1.47 dB with 9.9‐dB associated gain has been achieved at 12 GHz, with a 0.6‐μm gate length by 300‐μm gate width FET device. These are the best results yet reported for low‐noise molecular beam epitaxial (MBE) GaAs FET’s, and comparable to the best performance devices made with vapor phase epitaxy and ion implantation. Equivalent circuit elements have been evaluated in an effort to understand the critical parameters necessary to achieve these results.
Show PACS
85.30.Tv Field effect devices

Toward quantum well wires: Fabrication and optical properties

P. M. Petroff, A. C. Gossard, R. A. Logan, and W. Wiegmann

Appl. Phys. Lett. 41, 635 (1982); http://dx.doi.org/10.1063/1.93610 (4 pages) | Cited 250 times

Full Text: | Download PDF

Show Abstract
As a first step toward the realization of a one‐dimensional carrier confining structure in semiconductors, we have fabricated GaAs quantum well wires (QWW) with submicron dimensions using molecular beam epitaxy of GaAs and Ga1−xAlxAs. The structural quality and dimensions of the QWW have been assessed by transmission electron microscopy showing that single crystal, defect‐free QWW, with dimensions as small as 200×200 Å in cross section can be achieved. The optical properties measured by low‐temperature (T≳20°K) cathodoluminescence (CL) indicate a CL efficiency nearly as good as that of the quantum well material from which the QWW originated. A localization of the luminescence along the QWW axis is characteristic of QWW with sizes below a critical dimension (1.5 μm×200 Å cross section). This luminescence localization and a shift of the intrinsic luminescence to lower energy in QWW structures are tentatively assigned to strain effects in these structures.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Impurity redistribution in GaAs metalorganic vapor phase epilayers

A. M. Huber, G. Morillot, M. Bonnet, P. Merenda, and G. Bessonneau

Appl. Phys. Lett. 41, 638 (1982); http://dx.doi.org/10.1063/1.93633 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
This letter reports new experimental results using the secondary ion mass spectrometry technique for quantitative determination of Mg, Cr, Mn, Fe in gallium arsenide layers grown on semi‐insulating substrates by means of metalorganic vapor phase epitaxy. Mg amd Fe accumulation at the interface and variable residual impurity levels were found in these layers.
Show PACS
81.10.Bk Growth from vapor
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
07.75.+h Mass spectrometers

Hydrogen annealing of silicon gate‐nitride‐oxide‐silicon nonvolatile memory devices

James A. Topich and Raymond A. Turi

Appl. Phys. Lett. 41, 641 (1982); http://dx.doi.org/10.1063/1.93634 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
A hydrogen annealing study of silicon gate‐nitride‐oxide‐silicon (SNOS) nonvolatile memory devices showed that the important parameter in determining the optimum hydrogen annealing temperature for maximum charge retention is the previous thermal history of the memory devices. If a memory device’s charge retention is not degraded by high‐temperature processing, then the hydrogen anneal should be at the silicon nitride deposition temperature. If a device is degraded by high‐temperature processing, then the hydrogen anneal should be at the degradation temperature.
Show PACS
73.61.Ng Insulators
85.30.Tv Field effect devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
77.55.-g Dielectric thin films

Picosecond time‐resolved plasma and temperature‐induced changes of reflectivity and transmission in silicon

J. M. Liu, H. Kurz, and N. Bloembergen

Appl. Phys. Lett. 41, 643 (1982); http://dx.doi.org/10.1063/1.93611 (4 pages) | Cited 66 times

Full Text: | Download PDF

Show Abstract
A pump‐and‐probe technique is used to perform picosecond time‐resolved measurements of reflectivity and transmission changes in silicon. The results provide direct evidence that lattice heating, melting, or boiling can occur on a picosecond time scale. Detailed analysis of the data provides information about the dynamics of the electron‐hole plasma prior to melting and the kinetics of ultrafast phase transitions and crystal regrowth.
Show PACS
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
79.20.Ds Laser-beam impact phenomena
81.10.Fq Growth from melts; zone melting and refining
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close