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Lateral diffusion of Ni and Si through Ni₂Si in Ni/Si couples

L. R. Zheng, L. S. Hung, J. W. Mayer, G. Majni, and G. Ottaviani

Appl. Phys. Lett. 41, 646 (1982); http://dx.doi.org/10.1063/1.93635 (4 pages) | Cited 39 times

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Lateral diffusion couples of Ni on Si layers and Si on Ni layers were used in conjunction with scanning electron microprobe measurements to investigate the growth of Ni silicides in the temperature range 400–700 °C. The phase Ni₂Si grows proportional to (time)^1/2 until a length of 25–30 μm (at 600 °C) where the phase sequence Ni₅Si₂, Ni₂Si, Ni₃Si₂, and NiSi is observed. Both Ni and Si diffuse through Ni₂Si with an effective diffusion coefficient D≃0.02 cm²/s ×exp[−(1.4±0.1) eV/kT]. The diffusion of Si was also observed by the growth of Ni₂Si in Ni films at the periphery of contact openings in SiO₂ layers on Si.

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66.30.-h	Diffusion in solids
64.70.K-	Solid-solid transitions
81.30.Dz	Phase diagrams of other materials
64.60.-i	General studies of phase transitions

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Silicon solar cell with a novel low‐resistance emitter structure

P. G. Borden and R. V. Walsh

Appl. Phys. Lett. 41, 649 (1982); http://dx.doi.org/10.1063/1.93636 (3 pages) | Cited 1 time

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A silicon solar cell with over 19% efficiency at 100 suns, AM1.5, 20 °C, incorporating a novel front contact geometry, has been demonstrated. The cell has one third of its frontal area covered with metal and grid line spacing of 82 μ, as measured along the silicon surface. It uses V‐groove etching, angle‐contact metal evaporation, and a cover glass to allow high fractional grid coverage with low obscuration, thereby minimizing emitter resistance losses at high concentrations.

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84.60.Jt

Photoelectric conversion

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Electrical rectification caused by lamellar microstructures in platinum‐doped TiO_2−x ceramics

A. H. Meitzler, S. S. Shinozaki, and W. T. Donlon

Appl. Phys. Lett. 41, 651 (1982); http://dx.doi.org/10.1063/1.93637 (3 pages) | Cited 2 times

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A heat treatment combining cyclic oxidation/reduction with an applied electric field is described that enhances the diffusion of Pt into TiO_2−x ceramics and causes a reaction product of PtTi₃ to be formed. The PtTi₃ forms as lamellar microstructures within the TiO_2−x rutile grains. The ceramics produced by this heat treatment have markedly altered electrical properties showing room‐temperature conductivities increased several orders of magnitude and asymmetrical conductivity (rectification) characteristics.

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73.30.+y	Surface double layers, Schottky barriers, and work functions
73.40.Ei	Rectification
61.05.J-	Electron diffraction and scattering
07.79.Cz	Scanning tunneling microscopes
61.05.-a	Techniques for structure determination

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Palladium and platinum gate metal‐oxide‐semiconductor capacitors in hydrogen and oxygen mixtures

M. Armgarth, D. Söderberg, and I. Lundström

Appl. Phys. Lett. 41, 654 (1982); http://dx.doi.org/10.1063/1.93638 (2 pages) | Cited 22 times

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A comparison is made between palladium (Pd) and platinum (Pt) as gates in metal‐oxide‐semiconductor devices in different hydrogen/oxygen mixtures. We have shown that Pd is superior as gate material for detection of small amounts of hydrogen in room ambient. At high hydrogen concentrations Pt would be more suitable.

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85.30.Tv	Field effect devices
73.40.Qv	Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
07.07.Df	Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

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Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio

J. R. Morante, J. E. Carceller, A. Herms, P. Cartujo, and J. Barbolla

Appl. Phys. Lett. 41, 656 (1982); http://dx.doi.org/10.1063/1.93603 (3 pages) | Cited 12 times

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Current transient spectroscopy was adapted to quasi‐compensated samples for measurement of the electron cross section for the acceptor gold level in Czochralski‐grown silicon in samples with various ratios of the deep level concentration N_T to the shallow level concentration N_D up to N_T/N_D = 0.83. The value obtained, (7.05±1)×10⁻¹⁷ cm², appears to be independent of the N_T/N_D ratio, in good agreement with previous results for lower N_T/N_D ratios.

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72.20.Jv	Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq	Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.55.-i	Impurity and defect levels
85.30.De	Semiconductor-device characterization, design, and modeling

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Nonlinear luminescence and time‐resolved diffusion profiles of photoexcited carriers in semiconductors

A. Olsson, D. J. Erskine, Z. Y. Xu, A. Schremer, and C. L. Tang

Appl. Phys. Lett. 41, 659 (1982); http://dx.doi.org/10.1063/1.93604 (3 pages) | Cited 37 times

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We describe a new and general optical technique for studying carrier dynamics in semiconductors which is based on the luminescence nonlinearity resulting from the bimolecular recombination of the carriers. The technique has been used to obtain time‐resolved diffusion profiles and the hole mobility in photoexcited GaAs.

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72.40.+w

Photoconduction and photovoltaic effects

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Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial Al_xGa_1−xAs

Takashi Matsumoto, Pallab K. Bhattacharya, and M. J. Ludowise

Appl. Phys. Lett. 41, 662 (1982); http://dx.doi.org/10.1063/1.93605 (3 pages) | Cited 19 times

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Thermal emission and capture properties of three dominant electron traps in organometallic vapor phase epitaxial Al_xGa_1−xAs have been studied by transient capacitance measurements. The traps have activation energies ΔE_T = 0.82±0.01, 0.62±0.02, and 0.38±0.02 eV, which remain invariant with x. The thermal capture cross section of the traps, however, decreases with increasing x. These results, together with the annealing behavior of the traps, add more evidence to the fact that the 0.82‐eV trap, commonly known as the EL2 center, is related to a Ga vacancy. The 0.82‐ and 0.38‐eV traps exhibit barriers to electron capture ∼0.06–0.08 eV and the concentration of the 0.62‐ and 0.38‐eV traps increases with increasing x.

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72.20.Jv	Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq	Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh	Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

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Theory of resonant scattering in semiconductors due to impurity central‐cell potentials

Otto F. Sankey, John D. Dow, and Karl Hess

Appl. Phys. Lett. 41, 664 (1982); http://dx.doi.org/10.1063/1.93606 (3 pages) | Cited 14 times

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Electron scattering by the central‐cell defect potential of a substitutional sp³‐bonded impurity or vacancy in a zincblende host is considered. Significant scattering of electrons can occur if a ’’deep resonance’’ lies slightly above the conduction‐band edge. The theory is applied to scattering of electrons by defects in GaAs.

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72.10.Fk	Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
72.10.-d	Theory of electronic transport; scattering mechanisms
72.80.Ey	III-V and II-VI semiconductors

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Critical currents in the Chevrel‐phase lead molybdenum sulfide thin films

K. Hamasaki, T. Inoue, T. Yamashita, T. Komata, and T. Sasaki

Appl. Phys. Lett. 41, 667 (1982); http://dx.doi.org/10.1063/1.93607 (3 pages) | Cited 5 times

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Critical currents in thin films of Chevrel‐phase lead molybdenum sulfide have been measured as a function of applied magnetic field up to 8.5 T. The magnetic field was perpendicular or parallel to the film plane, and a 5‐μV/cm criterion was used to define the critical current density J_c. The maximum value of critical current density was above 10⁶ A/cm² at zero field and 5×10⁴ A/cm² at 8 T. These values are greater than the best reported so far.

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74.25.Sv	Critical currents
74.25.-q	Properties of superconductors

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Compact integrated dc SQUID gradiometer

V. J. de Waal and T. M. Klapwijk

Appl. Phys. Lett. 41, 669 (1982); http://dx.doi.org/10.1063/1.93608 (3 pages) | Cited 14 times

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An all‐niobium integrated system of first‐order gradiometer and dc suprconducting quantum interference device (SQUID) has been developed. It is relatively simple to fabricate, has an overall size of 17×12 mm and a sensitivity of 3.5×10⁻¹² T m⁻¹ Hz^−1/2.

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85.25.-j	Superconducting devices
74.50.+r	Tunneling phenomena; Josephson effects
07.55.-w	Magnetic instruments and components

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Role of dangling bonds and antisite defects in rapid and gradual III‐V laser degradation

John D. Dow and Roland E. Allen

Appl. Phys. Lett. 41, 672 (1982); http://dx.doi.org/10.1063/1.93609 (3 pages) | Cited 16 times

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Based on calculations of deep trap energies, it is proposed that the rapid (∼1 h) degradation of high‐radiance (≳10¹⁸ carriers/cm³) Ga‐rich III‐V semiconductor lasers proceeds through self‐reproducing dangling bond deep traps generated as a result of nonradiative recombination. This degradation mechanism can be inhibited by constructing lasers from alloys whose dangling bond energy levels do not lie within the fundamental band gap. The gradual (∼10⁶ h) III‐V laser degradation is tentatively associated with recombination events at an anion‐on‐cation‐site deep trap.

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78.60.Fi	Electroluminescence
61.72.-y	Defects and impurities in crystals; microstructure

BROWSE VOLUMES

1 Oct 1982

Volume 41, Issue 7, pp. 583-674

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