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15 Oct 1982

Volume 41, Issue 8, pp. 679-775

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Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures

D. A. B. Miller, D. S. Chemla, D. J. Eilenberger, P. W. Smith, A. C. Gossard, and W. T. Tsang

Appl. Phys. Lett. 41, 679 (1982); http://dx.doi.org/10.1063/1.93648 (3 pages) | Cited 203 times

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We report the first measurements of optical absorption saturation in GaAs/GaAlAs multiple quantum well (MQW) structures at room temperature near the heavy hole exciton peak. Linear absorption shows distinct exciton peaks at room temperature in the MQW and we deduce this is because the confinement increases exciton binding energy without increasing LO phonon coupling. This room‐temperature MQW absorption also saturates more readily than that in a comparable GaAs sample; the measured saturation intensity is 580 W/cm2 with a recombination time of 21 ns in a MQW with 102‐Å GaAs layers. From this we predict a nonlinear refraction coefficient n2∼2×10−5 cm2/W. This large nonlinearity should permit room‐temperature optical devices compatible with laser diode wavelengths, materials and power levels.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Resonance phenomena on bias current dependence of AlGaAs double heterostructure laser amplifier

Nobutaka Watanabe and Kyohei Sakuda

Appl. Phys. Lett. 41, 682 (1982); http://dx.doi.org/10.1063/1.93649 (3 pages) | Cited 2 times

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We report the first observation of the resonance phenomena on the bias current dependence of the amplified light output for AlGaAs double heterostructure laser. We also show that this resonance phenomenon is mainly caused by the change in the refractive index of the active layer due to the bias current change in terms of the simple theoretical calculations taking into account the effect of the refractive index change in the active layer.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.62.-b Laser applications
42.79.Gn Optical waveguides and couplers

‘‘Temporal tuning’’ of XeCl laser pulse width from 5 ns to less than 500 ps using saturable absorber dyes

Thomas Varghese

Appl. Phys. Lett. 41, 684 (1982); http://dx.doi.org/10.1063/1.93650 (3 pages) | Cited 8 times

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The width of XeCl laser pulse from a discharge laser has been ’’temporally tuned’’ from 5 ns to less than 500 ps using saturable absorber dyes. A maximum pulse shortening of ≊20 has been achieved in a single pass, single stage saturable absorber pulse compression scheme. Pulse shortening characteristics were found to be reproducible for single shot and repetition rate operation.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Hp Optical processors, correlators, and modulators

Magneto‐optical studies on cobalt substituted MnSb films

M. S. Vijayaraghavan and V. Sivaramakrishnan

Appl. Phys. Lett. 41, 686 (1982); http://dx.doi.org/10.1063/1.93651 (3 pages)

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Optical and magneto‐optical studies MnSb films substituted with 20 at. % of cobalt have been carried out. The results suggest the possibility of these being considered as potential candidates for magneto‐optic storage.
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85.70.Sq Magnetooptical devices
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
78.20.Ls Magneto-optical effects
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Passive (self‐pumped) phase conjugate mirror: Theoretical and experimental investigation

Mark Cronin‐Golomb, Baruch Fischer, Jeffrey O. White, and Amnon Yariv

Appl. Phys. Lett. 41, 689 (1982); http://dx.doi.org/10.1063/1.93652 (3 pages) | Cited 28 times

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We report the results of a theoretical and experimental investigation of a passive (self‐pumped) phase conjugate mirror. This device is based on real time holography in materials which allow a spatial phase shift between the refractive index grating and the light interference pattern. An imaging experiment is reported showing the phase conjugating nature of the device. The holographic medium used was a single crystal of barium titanate.
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42.65.-k Nonlinear optics
42.40.-i Holography
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

Far‐infrared radiation from thin‐film plasmons excited at the difference frequency of two CO2 lasers

J. B. McManus

Appl. Phys. Lett. 41, 692 (1982); http://dx.doi.org/10.1063/1.93653 (3 pages) | Cited 3 times

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We report the first observation of radiation from coherently excited thin‐film plasmons of definite wave vector. With two noncollinear CO2 laser beams incident on a 20‐μm‐thick film of n‐InSb, a difference frequency radiation at ∼100 cm−1 was generated, with a resonance at the plasma frequency. Previous theory had indicated than thin‐film plasmons of definite wave vector could be coherently excited with a longitudinal driving force produced at the difference frequency of two laser beams. This thin‐film plasmon is partially transverse and radiates efficiently. The observed difference frequency generation as a function of angle and difference frequency follows the theoretical predictions.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Characterization of phase noise in semiconductor lasers

S. Piazzolla, P. Spano, and M. Tamburrini

Appl. Phys. Lett. 41, 695 (1982); http://dx.doi.org/10.1063/1.93654 (2 pages) | Cited 11 times

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Phase noise in semiconductor lasers has been investigated by many authors in the range of low frequencies (<1 MHz). In this letter we present for the first time phase noise measurements extended up to frequencies greater than 1 GHz. Experimental results showing the power spectral density Sϕ(ω) of the instantaneous frequency ϕ(t) and the variance σ2[Δτϕ(t)] of the phase shift Δτϕ(t) are presented. The peculiar behavior of Sϕ(ω), which presents a sharp peak at the same frequency of the amplitude noise peak, can account for the excessive broadening of the linewidth of single‐mode injection lasers.
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42.55.Px Semiconductor lasers; laser diodes

Effects of dielectric relaxations and dual‐frequency addressing on the electro‐optics of guest‐host liquid crystal displays

M. Schadt

Appl. Phys. Lett. 41, 697 (1982); http://dx.doi.org/10.1063/1.93655 (3 pages) | Cited 9 times

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Nematic as well as phase‐change guest‐host liquid crystal displays are shown to be dual‐frequency addressable by using liquid crystalline hosts with suitable static and dynamic dielectric properties, thus rendering them multiplexable. Positive as well as negative optical contrasts and fast turn‐off times can be achieved.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Raman scattering with nanosecond resolution during pulsed laser annealing of silicon

D. von der Linde and G. Wartmann

Appl. Phys. Lett. 41, 700 (1982); http://dx.doi.org/10.1063/1.93639 (3 pages) | Cited 20 times

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The development of the anti‐Stokes to Stokes ratio of spontaneous Raman scattering in silicon is measured during annealing with a 10‐ns laser pulse. Raman measurements with weak UV probe pulses avoid averaging over the penetration depth of the annealing pulses. The data suggest that the surface temperature rises above the melting point for exposure energies greater than 0.35 J/cm2. The absolute temperature inferred from the Raman experiments are subject to some uncertainty because of a lack of information on the temperature dependence of the Raman scattering cross sections.
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68.35.Md Surface thermodynamics, surface energies
78.30.Hv Other nonmetallic inorganics

Optical input and output characteristics for bistable semiconductor lasers

H. Kawaguchi

Appl. Phys. Lett. 41, 702 (1982); http://dx.doi.org/10.1063/1.93640 (3 pages) | Cited 23 times

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Experimental results are presented regarding the switching of a bistable semiconductor laser’s output (PO) with injected optical power (PI). An incident optical beam, generated by an ordinary semiconductor laser, was injected into the bistable semiconductor laser with inhomogeneous excitation. The mutual relation between PI‐PO characteristics and I‐L characteristics for the bistable laser, and the dependence of PI‐PO characteristics on the bias current of the bistable laser are described. Switching between the two stable bistable operation states is accomplished by injecting optical trigger pulses. Switching of the laser having differential gain characteristics, through use of optical pulse, is also looked at.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.-k Nonlinear optics
42.82.-m Integrated optics

Magnetoresistive waves in plasmas

F. S. Felber, R. O. Hunter, N. R. Pereira, and T. Tajima

Appl. Phys. Lett. 41, 705 (1982); http://dx.doi.org/10.1063/1.93641 (3 pages) | Cited 10 times

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The self‐generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.40.-w Plasma interactions (nonlaser)
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams

Large conductivity changes in ion beam irradiated organic thin films

S. R. Forrest, M. L. Kaplan, P. H. Schmidt, T. Venkatesan, and A. J. Lovinger

Appl. Phys. Lett. 41, 708 (1982); http://dx.doi.org/10.1063/1.93642 (3 pages) | Cited 83 times

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Using 2‐MeV Ar+ ion beam irradiation, we have generated conducting patterns in otherwise high resistivity, organic thin films of 3,4,9,10‐perylenetetracarboxylic dianhydride (PTCDA), 1,4,5,8‐napthalenetetracarboxylic dianhydride (NTCDA), and Ni phthalocyanine (NiPc). The room‐temperature resistivity of the films changes by 14 orders of magnitude from its as‐deposited value of ρ≳1010 Ω cm to ρ≅5×10−4 Ω cm at ion doses of 1017 cm−2. The temperature (T) dependence of the resistivity follows ρ(T)∝exp[+(T0/T)1/2] over a wide range of dose and temperature. The characteristic temperature T0 is found to be a function of dose. The exp(T0/T)1/2 behavior of ρ(T) is consistent with charge transport due to hopping between isolated, conducting islands.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.20.-i Conductivity phenomena in semiconductors and insulators

Characterization of damage in ion implanted Ge

B. R. Appleton, O. W. Holland, J. Narayan, O. E. Schow, J. S. Williams, K. T. Short, and E. Lawson

Appl. Phys. Lett. 41, 711 (1982); http://dx.doi.org/10.1063/1.93643 (2 pages) | Cited 51 times

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It has been observed that ion implantation into Ge at room temperature creates severe surface craters extending several thousand angstroms into the surface, and results in the incorporation of large quantities of C and O impurities (∼50 impurities/ion). This effect has a strong temperature dependence and essentially disappears for implantations performed at liquid nitrogen temperature. The systematics of this effect are presented, preliminary annealing results are cited, and possible mechanisms are discussed.
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61.72.U- Doping and impurity implantation

CdTe‐HgTe multilayers grown by molecular beam epitaxy

J. P. Faurie, A. Million, and J. Piaguet

Appl. Phys. Lett. 41, 713 (1982); http://dx.doi.org/10.1063/1.93644 (3 pages) | Cited 74 times

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Monocrystalline multilayers CdTe‐HgTe have been grown for the first time using the molecular beam epitaxy (MBE) technique. A multilayer consisting alternately of CdTe (44 Å thick) and HgTe (180 Å thick), repeated 100 times, has been grown at 200 °C with a good crystal quality. As for epilayers grown by MBE the crystallinity of the multilayers is improved by a raise in substrate temperature; moreover, the crystal quality is higher for HgTe than for CdTe up to 200 °C. An upper limit of 40 Å for the interdiffusion depth between HgTe and CdTe layers has been determined from Auger electron spectroscopy and ion microprobe profiling measurements carried out on a 13 1/2 ‐period multilayer, each period consisting of 150 Å for the CdTe layer and 400 Å for HgTe layer. We have also observed that no decrease occurs in the peak‐to‐valley ratio Auger signals if the focus of the electron gun is maintained at the center of the ion crater, during all the analysis, using the secondary electron image.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Bulk formation of a metallic glass: Pd40Ni40P20

A. J. Drehman, A. L. Greer, and D. Turnbull

Appl. Phys. Lett. 41, 716 (1982); http://dx.doi.org/10.1063/1.93645 (2 pages) | Cited 138 times

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Molten spheroids of Pd40 Ni40 P20, of up to 0.53‐cm minor diameter, were slowly cooled (1.4 K/s) on a fused silica surface under 10−6 Torr vacuum to a form which was entirely glassy except for some superficial crystallinity comprising less than 0.5% of the volume. The occurrence of crystallization was eliminated by subjecting the specimens to surface etching followed by a succession of heating and cooling cycles. The absence of crystallization in the bulk was confirmed by x‐ray diffraction, transmission electron microscopy, and calorimetry. Using the last technique, the heat of crystallization of the glass was measured to be 5.3±0.3 kJ/g atom.
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81.05.Kf Glasses (including metallic glasses)
81.10.Fq Growth from melts; zone melting and refining
81.65.-b Surface treatments

Epitaxial growth of Pd2Si films on Si(111) substrates by scanning electron‐beam annealing

Hiroshi Ishiwara and Hiroshi Yamamoto

Appl. Phys. Lett. 41, 718 (1982); http://dx.doi.org/10.1063/1.93646 (3 pages) | Cited 2 times

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Pd2Si films were grown epitaxially onto Si(111) substrates by scanning electron‐beam annealing of deposited Pd films. Single phase silicide formation and epitaxial growth were studied by Nomarski optical microscopy, x‐ray diffraction analysis, and Rutherford backscattering and channeling techniques. The crystalline quality of the electron‐beam‐annealed Pd2Si films was weakly dependent on annealing conditions and somewhat worse than that of furnace‐annealed films.
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68.55.-a Thin film structure and morphology
61.80.Fe Electron and positron radiation effects

Fe‐B glasses formed by picosecond pulsed laser quenching

Chien‐Jung Lin and Frans Spaepen

Appl. Phys. Lett. 41, 721 (1982); http://dx.doi.org/10.1063/1.93647 (3 pages) | Cited 24 times

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Using picosecond pulsed laser irradiation, Fe‐B alloys have been melted and quenched into glasses, with a B content as low as 5 at. %, which is significantly less than the minimum 12‐at. % B content required for glass formation by other liquid quenching techniques. Compositionally modulated films with wavelengths on the order of 20 Å were used as starting materials to ensure homogeneity of the melt after irradiation.
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64.70.K- Solid-solid transitions
81.05.Kf Glasses (including metallic glasses)
42.60.-v Laser optical systems: design and operation

Ring formation of Kirkendall voids in Pb‐alloy thin‐film diffusion couples

H.‐C. W. Huang

Appl. Phys. Lett. 41, 724 (1982); http://dx.doi.org/10.1063/1.93674 (3 pages) | Cited 3 times

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Ring formation has been observed in thin‐film diffusion couples consisting of a 400‐nm‐thick Pb0.71Bi0.29 (in weight fraction) or Pb layer above a 200‐nm‐thick Pb0.84In0.12Au0.04 layer with a very thin (∼6 nm) rf‐grown oxide diffusion barrier in between. When interdiffusion was initiated by a rupture in the oxide barrier, concentric rings were observed to form in Pb‐Bi or Pb layer centering at the rupture site as interdiffusion proceeded. Rings were found to be a string of voids resulting from Kirkendall interdiffusion. In addition, relatively high concentrations of indium and oxygen were found at rings. Although the mechanism for ring formation is not clear at present, factors which influence ring formation are discussed.
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66.30.Ny Chemical interdiffusion; diffusion barriers
66.30.Lw Diffusion of other defects

Interfacial properties of indium tin oxide/indium phosphide devices

P. Sheldon, R. K. Ahrenkiel, R. E. Hayes, and P. E. Russell

Appl. Phys. Lett. 41, 727 (1982); http://dx.doi.org/10.1063/1.93656 (3 pages) | Cited 13 times

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Efficient indium tin oxide (ITO)/p‐InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance‐voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi‐insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.
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72.80.Ey III-V and II-VI semiconductors
84.60.Jt Photoelectric conversion
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Multiply scanned electron beam annealing of ion implanted indium phosphide

Sukhdev S. Gill

Appl. Phys. Lett. 41, 729 (1982); http://dx.doi.org/10.1063/1.93657 (3 pages) | Cited 6 times

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A multiply scanned electron beam has been used to anneal ion implanted indium phosphide in the dose range of 5×1012 to 3.6×1014 Se+/cm2. The power density was varied from 8 to 165 W/cm2, and exposure times were in the range 0.5–4.5 s. The best electrical activity for the dose of 5×1012 Se+/cm2 was 9% with a sheet mobility of 1400 cm2/Vs, whereas for a dose of 3.6×1014 Se+/cm2 the electrical activity was 36% with a sheet mobility of 760 cm2/Vs.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Effects of compositional clustering on electron transport in In0.53Ga0.47As

J. H. Marsh

Appl. Phys. Lett. 41, 732 (1982); http://dx.doi.org/10.1063/1.93658 (3 pages) | Cited 51 times

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A new theory of alloy scattering is proposed which assumes the presence of compositional clusters in alloy semiconductors. This is used in electron transport calculations for In0.53Ga0.47As, and it is found that good agreement can be obtained with experimental velocity‐field data, measured up to the threshold electric field. The theory assumes small (∼2%) fluctuations in composition over 1000 atoms.
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72.10.-d Theory of electronic transport; scattering mechanisms

NiSi2‐Si infrared Schottky photodetectors grown by molecular beam epitaxy

T. R. Harrison, A. M. Johnson, P. K. Tien, and A. H. Dayem

Appl. Phys. Lett. 41, 734 (1982); http://dx.doi.org/10.1063/1.93659 (3 pages) | Cited 11 times

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We report the first infrared sensitive (λ≳1 μm) Schottky photodetector using nickel disilicide (NiSi2) grown expitaxially on a silicon substrate by molecular beam expitaxy. Measurements utilizing the 1.32‐μm line of a neodymium yttrium aluminum garnet (Nd:YAG) laser indicate a barrier height of 0.64 eV and a quantum efficiency of 0.22%. The use of silicon technology has the potential of integrating the detector with electronics on a monolithic chip of silicon. Such systems are attractive for optical communication applications in the 1.3‐μm wavelength region.
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72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Rs Electrical and magnetic properties related to treatment conditions
85.60.Gz Photodetectors (including infrared and CCD detectors)

Fabrication of surface‐channel charge‐coupled devices with ultralow density of interface states

Nelson S. Saks

Appl. Phys. Lett. 41, 737 (1982); http://dx.doi.org/10.1063/1.93660 (3 pages) | Cited 2 times

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Surface‐channel charge‐coupled devices (CCD’s) have been fabricated with ultralow density of (fast) interface states in the range 1–3×108/cm2 eV. This low interface state density is achieved by hydrogen implantation into the metal‐nitride‐oxide‐silicon (MNOS) insulator structure of the CCD as the final fabrication step after aluminum interconnect metallization. The CCD’s are shown to have excellent operating characteristics including high transfer efficiency (∼0.99995 without bias charge), low dark current (0.25–0.50 nA/cm2 at 20°C), and high signal charge capacity (1.55×1012 e/cm2 for 10‐V clock swing).
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85.30.-z Semiconductor devices

Diffusion of deuterium and hydrogen in crystalline LiNbO3

R. Gonzalez, Y. Chen, K. L. Tsang, and G. P. Summers

Appl. Phys. Lett. 41, 739 (1982); http://dx.doi.org/10.1063/1.93661 (3 pages) | Cited 28 times

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The diffusion coefficient of D+ in LiNbO3 single crystals at elevated temperatures has been measured by monitoring the growth of the OD− optical absorbance in samples heated in D2O vapor. The diffusion coefficient at 873 K is ∼5×10−8 cm2/s for diffusion either parallel or perpendicular to the z axis, and the activation energy parallel to the z axis is 1.4 eV.
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66.30.J- Diffusion of impurities

Capped versus capless heat treatment of molecular beam epitaxial GaAs

S. H. Xin, W. J. Schaff, C. E. C. Wood, and L. F. Eastman

Appl. Phys. Lett. 41, 742 (1982); http://dx.doi.org/10.1063/1.93662 (3 pages) | Cited 11 times

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Both capless and Si3N4 capped annealing of molecular beam epitaxial n‐GaAs were investigated by photoluminescence and computerized deep level spectroscopy. It was found that the 1.507‐eV emission bands (defect exciton) and the 1.4934‐eV (carbon) and the 0.83‐eV (EL2) electron trap are greatly enhanced after Si3N4 encapsulated annealing at 700 °C. These features were not observed in capless annealed material. It is concluded that capless annealing using an InAs ambient can avoid surface impurity, drive in, and stress effects in the MBE film. In addition, Si3N4 capping causes surface topographic degradation on annealing, whereas capless annealing does not.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
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