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15 Oct 1982

Volume 41, Issue 8, pp. 679-775

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Effect of p‐n junction position on the performance of InGaAsP light emitting diodes

H. Temkin, W. B. Joyce, A. K. Chin, M. A. DiGiuseppe, and F. Ermanis

Appl. Phys. Lett. 41, 745 (1982); http://dx.doi.org/10.1063/1.93663 (3 pages)

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The power‐speed relationship of 1.3‐μm InGaAsP light emitting diodes is examined as a function of the p‐n junction position within the active layer. It is shown that a gradual displacement of the p‐n junction into the InGaAsP layer results in devices with increased speed and lower output power. To account for the experimental findings junction displacement is modeled in terms of both electron and hole injection.
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85.60.Jb Light-emitting devices

Orientation selection by zone‐melting silicon films through planar constrictions

H. A. Atwater, Henry I. Smith, and M. W. Geis

Appl. Phys. Lett. 41, 747 (1982); http://dx.doi.org/10.1063/1.93664 (3 pages) | Cited 13 times

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Recrystallization of encapsulated Si films on SiO2 by zone‐melting produces films composed of several grains approximately 1 mm wide and extending the length of the scan. Within grains there are sub‐boundaries. We report a technique for producing recrystallized Si films of a single orientation. The technique consists of patterning polysilicon with a narrow, planar constriction and passing a molten zone through it so that only one orientation propagates beyond the constriction. We also show that sub‐boundaries can be eliminated in the constriction.
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68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Thermal pulse annealing of boron‐implanted HgCdTe

K. L. Conway, W. G. Opyd, M. E. Greiner, J. F. Gibbons, T. W. Sigmon, and L. O. Bubulac

Appl. Phys. Lett. 41, 750 (1982); http://dx.doi.org/10.1063/1.93665 (3 pages) | Cited 14 times

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Crystal damage, caused by a 1015 11B/cm2 250‐keV implant into epitaxial Hg0.64Cd0.36Te layers held at LN2 temperature, has been successfully annealed, as observed by MeV 4He ion channeling and Rutherford backscattering. The anneal consists of a thermal pulse of 250 °C for 8 s in air under a Si proximity cap. Secondary ion mass spectrometry (SIMS) data indicate that the boron did not diffuse during the anneal. An n‐p junction was observed at a depth of 5.5 μm by electron beam induced current (EBIC) measurements. A diode fabricated on the layer exhibited a very sharp I‐V curve with reverse breakdown occurring at 12 V and an R0A of ⩾107 Ω cm2 at 77 K.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
73.40.Rw Metal-insulator-metal structures

Patterned silicon molecular beam epitaxy with submicron lateral resolution

J. C. Bean and G. A. Rozgonyi

Appl. Phys. Lett. 41, 752 (1982); http://dx.doi.org/10.1063/1.93666 (4 pages) | Cited 5 times

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Patterned epitaxial silicon films are grown on silicon substrates by molecular beam deposition (MBE) through an oxide masking layer. Epitaxial patterns faithfully reproduce the oxide mask, which is fabricated by conventional photolithographic processes. Resolution is determined solely by the mask, and linewidths below 1 μ are demonstrated. Sample morphology and crystallinity are examined by scanning and transmission electron microscopy, and Nomarski interference contrast microscopy in conjunction with chemical defect etching. These techniques confirm that patterned films are epitaxial and free of observable defects. A chemical liftoff step dissolves the oxide mask and leaves an elevated silicon pattern. Patterned film growth requires no modification to the MBE apparatus.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Infrared rapid thermal annealing of Si‐implanted GaAs

Masaaki Kuzuhara, Hideaki Kohzu, and Yoichiro Takayama

Appl. Phys. Lett. 41, 755 (1982); http://dx.doi.org/10.1063/1.93667 (4 pages) | Cited 37 times

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Conditions for post‐implantation capless annealing of GaAs, called infrared rapid thermal annealing (IRTA) using halogen lamps, were investigated. Si‐implanted GaAs (5×1012 cm−2, 150 keV) was annealed at temperatures ranging from 700 to 1100 °C for various annealing times. Annealed GaAs at 950 °C for 2–4 s shows about 75% electrical activation and 3700 cm2/Vs electron mobility without noticeable dopant diffusion and surface decomposition. Planar metal‐semiconductor field‐effect transistors (MESFET’s) fabricated on the active layer formed by this annealing method show that the technique is promising as a post‐implantation annealing method for the fabrication of GaAs MESFET’s and GaAs integrated circuits (IC’s).
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
85.30.Tv Field effect devices

New method for generation of Josephson pulses

I. Iguchi and A. Nishiura

Appl. Phys. Lett. 41, 759 (1982); http://dx.doi.org/10.1063/1.93668 (3 pages)

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A new circuit which generates ultrashort Josephson pulses is presented. The experiments verify the operational principle. Pulse duration, pulse repetition rate, and pulse delay with respect to the trigger output are adjustable from outside the cryostat system. Some application to nonequilibrium superconductivity is given.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
74.40.-n Fluctuation phenomena

Work function of oxygen exposed lead and lead/indium alloy films

K. H. Gundlach, H. P. Hellemann, and J. Hölzl

Appl. Phys. Lett. 41, 761 (1982); http://dx.doi.org/10.1063/1.93669 (3 pages) | Cited 1 time

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The effect of indium in superconducting tunnel junctions with lead/indium alloy base electrodes is investigated by measuring the vacuum work function of lead, indium, and lead/indium alloy films. It is found that the anomalous decrease of the work function of lead upon exposure to oxygen, explained by the penetration of oxygen into the inner surface of the lead film, is reversed into a slight increase in work function when some indium is added to the lead. This result indicates that the addition of indium provides a protection by suppressing the penetration of oxygen (and probably other gases) into the interior of the thin film.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
73.30.+y Surface double layers, Schottky barriers, and work functions

Superconductive tunneling into NbN deposited near room temperature

R. B. van Dover, D. D. Bacon, and W. Robert Sinclair

Appl. Phys. Lett. 41, 764 (1982); http://dx.doi.org/10.1063/1.93670 (3 pages) | Cited 19 times

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We have developed the ability to deposit niobium nitride thin films routinely having a superconducting transition temperature of 14 K by dc reactive magnetron sputtering onto substrates held near room temperature (Ts <90 °C). This allows the use of conventional photoresist liftoff techniques for patterning. Pb‐counterelectrode tunnel junctions formed on these films show excellent V‐I characteristics, suitable for device applications and offering potential advantages over conventional Pb‐alloy/Pb‐alloy and Nb/Pb‐alloy junctions. These high quality junctions are also suitable for tunneling investigations of superconductivity in the Nb‐N system.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.-q Properties of superconductors
85.25.-j Superconducting devices

Negative dynamic conductance from photon‐assisted tunneling in superconducting junctions

Michael L. Roukes and John W. Wilkins

Appl. Phys. Lett. 41, 767 (1982); http://dx.doi.org/10.1063/1.93671 (3 pages) | Cited 1 time

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We show that a superconductor‐insulator‐superconductor (SIS) junction may exhibit regions of negative dynamic conductance if it is irradiated by a time‐varying signal source which deviates from the conventionally treated constant ac voltage limit. This phenomenon reflects the strong dependence of the junction absorption cross section upon dc bias voltage. Analytic estimates for the magnitude of the negative conductance and its impact upon the frequency down conversion process are obtained in the constant ac current limit.
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74.20.Fg BCS theory and its development
74.25.N- Response to electromagnetic fields
74.50.+r Tunneling phenomena; Josephson effects
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

Observation of fluxon propagation on Josephson transmission line

A. Matsuda and S. Uehara

Appl. Phys. Lett. 41, 770 (1982); http://dx.doi.org/10.1063/1.93672 (3 pages) | Cited 13 times

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This letter reports on the observation of a single fluxon propagating on a Josephson transmission line (JTL). The JTL used has a Nb/Nb‐oxide/Pb tunnel structure with a 50‐μm width and a 1‐cm length. Output signals from the JTL are directly measured by using minicomputer signal processing. The obtained waveform and the threshold property agree with the theoretical results.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Dielectric function of coevaporated Co‐Al2O3 cermet films

G. A. Niklasson and C. G. Granqvist

Appl. Phys. Lett. 41, 773 (1982); http://dx.doi.org/10.1063/1.93673 (3 pages) | Cited 7 times

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The dielectric function of well characterized granular Co‐Al2O3 films, produced by e‐beam coevaporation, is reported for the 0.3–40‐μm range. The data are interpreted within the Maxwell‐Garnett formalism. Effects of atomic Co dispersed in the Al2O3 matrix and of multipole coupling among the Co particles are discussed.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.30.-j Infrared and Raman spectra
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
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