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1 Nov 1982

Volume 41, Issue 9, pp. 779-897

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Optical guided‐wave interactions with magnetostatic waves at microwave frequencies

A. D. Fisher, John N. Lee, E. S. Gaynor, and A. B. Tveten

Appl. Phys. Lett. 41, 779 (1982); http://dx.doi.org/10.1063/1.93700 (3 pages) | Cited 38 times

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Interaction of guided optical waves with microwave magnetostatic waves in yittrium iron garnet thin films has been demonstrated. TM↔TE mode conversion induced by codirectional (and contradirectional) magnetostatic waves was experimentally observed with conversion efficiencies of up to 4%. Theoretical expressions for this interaction are given and compared with observations. The thin‐film geometry demonstrated could make a practical number of optical signal processing devices in the 1–20‐GHz range.
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78.20.Ls Magneto-optical effects
42.79.Hp Optical processors, correlators, and modulators
85.70.Sq Magnetooptical devices
42.82.-m Integrated optics

Raising damage thresholds of gradient‐index antireflecting surfaces by pulsed laser irradiation

J. E. Swain, W. H. Lowdermilk, and D. Milam

Appl. Phys. Lett. 41, 782 (1982); http://dx.doi.org/10.1063/1.93701 (2 pages) | Cited 3 times

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Gradient‐index antireflecting surfaces produced by neutral solution processing have a median surface damage threshold of 12 J/cm2 for 1‐ns, 1064‐nm pulses. We have found that the threshold can be increased to 25 J/cm2 by irradiating the surface with 1064‐nm wavelength pulses with fluence below the initial 12‐J/cm2 threshold. Damage thresholds, both before and after this treatment, increased as the square root of the pulse duration in the 1–20‐ns range.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.86.+b Optical workshop techniques

Sources of photoionization in transversely excited atmospheric CO2 lasers

S. J. Scott and A. L. S. Smith

Appl. Phys. Lett. 41, 783 (1982); http://dx.doi.org/10.1063/1.93702 (3 pages) | Cited 5 times

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The existence of two sources of the photionization in UV preionized sealed CO2‐N2‐He‐(CO) lasers has been established. One is steadily created in the laser gas mixture by the electrical discharge and is identified as NO and NO2. The second source is associated with an impurity in any CO gas used as part of the initial gas mixture.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Eh Autoionization, photoionization, and photodetachment
52.80.-s Electric discharges

Bound‐free emission in HgBr

Walter P. Lapatovich, George R. Gibbs, and Joseph M. Proud

Appl. Phys. Lett. 41, 786 (1982); http://dx.doi.org/10.1063/1.93703 (3 pages) | Cited 9 times

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We report the first experimental observation of bound‐continuum fluorescence in the mercuric bromide system. HgBr (B2Σ+) population is created in ultraviolet photodissociative excitation of the dihalide. The resulting bound‐free fluorescence (B2Σ+→A2Π) is detected over a bandwidth of ≂120 nm centered at 685 nm. The associated and well known bound‐bound fluorescence (B2Σ+→X 2Σ+) is also seen. A semiclassical computer code has been developed to predict the transition probability density for the observed bound‐free features.
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33.20.Kf Visible spectra
33.70.Jg Line and band widths, shapes, and shifts

B → X transitions in HgCl and HgI

Joel Tellinghuisen, Patricia C. Tellinghuisen, Sue A. Davies, Patrick Berwanger, and K. S. Viswanathan

Appl. Phys. Lett. 41, 789 (1982); http://dx.doi.org/10.1063/1.93704 (3 pages) | Cited 15 times

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The B → X spectra of HgCl and HgI are studied at high resolution for the single isotopic species, 200Hg35Cl, 200Hg127I, and 200Hg129I. For HgI the analysis indicates that the v″ numbering should be decreased by one unit from the previous assignment. For both molecules the analyses deviate progressively from the previous assignments at high v″, extrapolating to lower estimates of the ground‐state dissociation energies. Franck–Condon calculations yield ΔRe (=Re′ −Re″) =0.60Å for HgCl and 0.49 Å for HgI. The strongest laser features previously reported for HgCl occur near the heads of the overlapped 0–22, 1–23, 2–24, and 3–25 bands. The HgI laser operates in the region of the 0–14, 0–15, 1–15, 1–16, 2–17, and 2–18 bands.
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33.20.Kf Visible spectra
33.20.Tp Vibrational analysis
33.70.-w Intensities and shapes of molecular spectral lines and bands
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

U. Koren, A. Hasson, K. L. Yu, T. R. Chen, S. Margalit, and A. Yariv

Appl. Phys. Lett. 41, 791 (1982); http://dx.doi.org/10.1063/1.93705 (3 pages) | Cited 7 times

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Low threshold InGaAsP/InP injection lasers on semi‐insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140‐μm cavity length and with 35–45% differential quantum efficiency have been obtained.
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42.55.Px Semiconductor lasers; laser diodes

200‐MHz electrodeless discharge excitation of an XeF laser

C. P. Christensen and R. W. Waynant

Appl. Phys. Lett. 41, 794 (1982); http://dx.doi.org/10.1063/1.93706 (3 pages) | Cited 14 times

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Two hundred megahertz electrodeless rf discharge excitation of an XeF laser is reported. Laser output of total duration exceeding 300 ns is observed. Onset of discharge inhomogeneity is found to limit duration of the laser pulse and to influence recovery of the active medium.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Room‐temperature cw operation in the visible spectral range of 680–700 nm by AlGaAs double heterojunction lasers

S. Yamamoto, H. Hayashi, T. Hayakawa, N. Miyauchi, S. Yano, and T. Hijikata

Appl. Phys. Lett. 41, 796 (1982); http://dx.doi.org/10.1063/1.93691 (3 pages) | Cited 12 times

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Room‐temperature cw operation at the wavelength below 700 nm has been achieved by AlGaAs double heterojunction (DH) lasers with a novel structure, in which a thick buffer layer is grown and the substrate is removed. Continuous‐wave threshold currents were 60–120 mA in the visible spectral range of 680–700 nm. Also the fundamental transverse and single longitudinal mode were obtained under cw operation. The shortest cw wavelength is 683 nm at the present time.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology

Wide aperture self‐sustained discharge KrF and XeCl lasers

S. Watanabe and A. Endoh

Appl. Phys. Lett. 41, 799 (1982); http://dx.doi.org/10.1063/1.93692 (3 pages) | Cited 30 times

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A UV‐preionized rare‐gas halide laser with a large aperture to 7×7 cm2 and active volume of 4 l has been operated at a high pressure regime of 5 atm. Beam profile measurements at the midplane between electrodes have shown the beam widths of 7 cm at a half‐energy density both in KrF and XeCl. The improvement in discharge homogeneity and extension of the optical pulse duration have been obtained by the peaking of the discharge current with a small stray capacitance between the rail gap and the laser head as well as by the use of Ne rather than He as a buffer gas, resulting in the output energy of 13.8 J in XeCl and 5.0 J in KrF.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Low loss poly(methyl methacrylate‐d5) core optical fibers

Toshikuni Kaino, Kaname Jinguji, and Shigeo Nara

Appl. Phys. Lett. 41, 802 (1982); http://dx.doi.org/10.1063/1.93693 (3 pages) | Cited 11 times

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Low loss plastic optical fibers (POF’s) have been prepared employing poly(methyl methacrylate‐d5) [P(MMA‐d5)] core and fluorinated alkyl methacrylate copolymer cladding with attenuation losses of 41 and 55 db/km at wavelengths of 565 and 646 nm, respectively. The POF can allow short distance optical signal transmission, about 400 m at –36 dBm at rates up to 25 MHz, using a display grade GaAlAs light emission diode whose emission power at 660 nm and 20 mA of forward input current is 1 mW. The loss limit of this P(MMA‐d5) core POF is estimated to be 22 dB/km at 565 nm.
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42.79.Gn Optical waveguides and couplers
42.25.Lc Birefringence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Effect of nonuniform piezoelectric films on monolithic surface acoustic wave devices

J. E. Bowers, R. L. Thornton, B. T. Khuri‐Yakub, R. L. Jungerman, and G. S. Kino

Appl. Phys. Lett. 41, 805 (1982); http://dx.doi.org/10.1063/1.93694 (3 pages) | Cited 3 times

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The effect of film thickness variation on the performance of ZnO on silicon surface acoustic wave delay lines is examined. The thickness variation obtained from a planar magnetron sputtering system with a 5‐cm diameter erosion ring was measured and found to be in good agreement with the calculated thickness variation. This information, together with theoretical data on the dependence of surface acoustic wave velocity on ZnO film thickness, is used to predict phase distortions of 400° across 1‐mm‐wide, 2.5‐cm‐long delay lines. This high level of phase distortion was confirmed by experimental measurements with a laser probe.
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43.35.Pt Surface waves in solids and liquids

Nonlinear aspects of hydrodynamic instabilities in laser ablation

Mark H. Emery, John H. Gardner, and Jay P. Boris

Appl. Phys. Lett. 41, 808 (1982); http://dx.doi.org/10.1063/1.93695 (3 pages) | Cited 48 times

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We report on our investigation of the Rayleigh–Taylor and Kelvin–Helmholtz (KH) instabilities in laser ablatively accelerated targets for a series of single mode perturbations. We find linear growth rates well below classical values and a cutoff in the growth rates for wavelengths less than the foil thickness. However, the striking result is the dominance of nonlinear effects, i.e., the KH rollup, for the short wavelength perturbations. Although the linear growth rate increases as k1/2 up to the cutoff, the KH rollup dominates at large k, drastically reducing the penetration rate of the dense spike below its free fall value in the nonlinear phase and effectively doubling the aspect ratio before foil breakup.
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52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.65.-y Plasma simulation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
47.20.-k Flow instabilities

Multikilowatt electron beams for pumping cw ion lasers

J. J. Rocca, J. D. Meyer, Z. Yu, M. Farrell, and G. J. Collins

Appl. Phys. Lett. 41, 811 (1982); http://dx.doi.org/10.1063/1.93696 (3 pages) | Cited 14 times

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A glow discharge electron gun capable of producing a well collimated dc electron beam at energies between 1 and 6 keV and currents up to 1 A is described. The electron beam is produced in helium at pressures between 0.1 and 2 Torr without differential pumping. Beam generation efficiencies up to 80% have been measured. The electron guns are designed to pump cw ion lasers and are constructed to provide an optical path through the axis. Continuous‐wave laser oscillation in Kr II has been obtained using electron‐beam pumping of a He–Kr mixture.
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41.75.Fr Electron and positron beams
52.80.Hc Glow; corona

Plasma channel formation with ultraviolet lasers

C. A. Frost, J. R. Woodworth, J. N. Olsen, and T. A. Green

Appl. Phys. Lett. 41, 813 (1982); http://dx.doi.org/10.1063/1.93697 (3 pages) | Cited 15 times

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The beam from a low‐divergence KrF laser (λ=248 nm) has been used to generate long plasma channels in low pressure gases. Current‐carrying channels 60 cm in length were produced with 5 mJ of laser energy. Channels exceeding 1 m in length were also initiated. The ionization source producing the plasma is laser‐induced resonant two‐step photoionization of organic molecules which are seeded in a buffer gas.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.75.Kq Plasma switches (e.g., spark gaps)
28.52.-s Fusion reactors

Characterization of thermally nitrided silicon dioxide

Jun Amano and Tom Ekstedt

Appl. Phys. Lett. 41, 816 (1982); http://dx.doi.org/10.1063/1.93698 (3 pages) | Cited 5 times

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Characterization of low pressure (LP) thermal oxide films grown on Si(100) substrate and thermally nitrided LP oxide films were conducted by glancing angle backscattering with channeling. Film stoichiometry and the SiO2/Si interface properties were investigated by MeV He+ ion beams. LP oxide films exhibited stoichiometric SiO2 composition with one to two monolayers of nonregistered Si atoms at the interface. After thermal nitridation of these LP oxide films at 925 and 950 °C for 2 h, thin (oxy)‐nitride layers on the oxide surface were observed. Also an additional one to two monolayers of nonregistered Si atoms were observed at the interface after the thermal nitridation. There were no observable changes in bulk stoichiometry of the LP oxide films after the thermal nitridation at 925 and 950 °C for 2 h.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
77.55.-g Dielectric thin films

Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopy

J. M. Gibson, J. C. Bean, J. M. Poate, and R. T. Tung

Appl. Phys. Lett. 41, 818 (1982); http://dx.doi.org/10.1063/1.93699 (3 pages) | Cited 87 times

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Previously we reported that (111) CoSi2 on Si grown under UHV conditions is a true single‐crystalline epitaxy. In this letter we report a determination of the atomic structure at the silicide‐silicon interface in UHV reacted films. This determination was based on electron‐microscopical data taken on an ultrahigh resolution instrument but included detailed consideration and modeling of the expected images. The atomic arrangement at this interface is best modelled with the silicide atom adjacent to the interface a metal one, with apparently only 5‐fold local coordination, contrasted with the 8‐fold coordination found in the bulk. The interface is perfectly regular, except at misfit dislocations, which have interesting core structure. Moreover, they provide indirect evidence for the ‘‘5‐fold’’ model in the case of codeposited silicide films.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Fluctuations in tipping angles and delay times of simple superfluorescence

C. T. Lee

Appl. Phys. Lett. 41, 821 (1982); http://dx.doi.org/10.1063/1.93707 (3 pages) | Cited 3 times

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It is shown that the essential statistical properties of the initial tipping angle θ0 can be obtained through a simple model and can be calculated directly from the super‐radiance master equation. Thus, the more elaborate models and the tedious task of solving the master equation can all be avoided, as far as θ0 is concerned. As a byproduct, the statistical properties of the delay time first calculated by Degiorgio are rederived in a more rigorous and much simpler way.
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32.50.+d Fluorescence, phosphorescence (including quenching)

Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

T. J. Stultz and J. F. Gibbons

Appl. Phys. Lett. 41, 824 (1982); http://dx.doi.org/10.1063/1.93708 (3 pages) | Cited 32 times

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A high pressure mercury arc lamp focused into a narrow ribbon beam has been used to recrystallize thin films of polysilicon deposited on thermally grown silicon dioxide. The recrystallized films contain grains that are typically 0.5–1 mm in width and several centimeters long. Surface texture measurements show the crystallites to be almost entirely 〈100〉 in the plane of the film with the orthogonal 〈100〉 direction closely paralleling the scan direction.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Mass‐to‐charge ratio and kinetic energy of positive ion emission accompanying fracture of a filled elastomer

J. T. Dickinson, L. C. Jensen, and M. K. Park

Appl. Phys. Lett. 41, 827 (1982); http://dx.doi.org/10.1063/1.93709 (3 pages) | Cited 8 times

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We have recently discovered that the electron emission (EE) and positive ion emission (PIE) accompanying and following fracture of filled elastomers have substantial components emitted in coincidence. We exploit this result by using a time‐of‐flight method to measure the mass‐to‐charge ratio and kinetic energy of the PIE from the fracture of polybutadiene filled with glass beads.
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62.20.M- Structural failure of materials
79.75.+g Exoelectron emission
79.90.+b Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Model of backsurface gettering of metal impurities in silicon

Arvind S. Vengurlekar

Appl. Phys. Lett. 41, 830 (1982); http://dx.doi.org/10.1063/1.93710 (3 pages) | Cited 3 times

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Metallic impurities can degrade silicon devices in many ways, and various gettering techniques are therefore used to immobilize these atoms at the backsurface of the wafer. A solution to the relevent diffusion equations is given here and used to obtain a simple formula relating the gettered atom density to the gettering temperature and time with the metal diffusivity in silicon as the main input. The model reproduces experimental trends quite well.
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66.30.J- Diffusion of impurities
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.Yx Interaction between different crystal defects; gettering effect

Carrier lifetime measurement for determination of recombination rates and doping levels of III‐V semiconductor light sources

C. B. Su and R. Olshansky

Appl. Phys. Lett. 41, 833 (1982); http://dx.doi.org/10.1063/1.93690 (3 pages) | Cited 37 times

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A novel method is described for measuring the carrier lifetimes in double heterostructure light‐emitting diodes (LED’s) and lasers. The improved resolution of the technique permits the first reported measurement of the carrier dependence of the radiative recombination coefficient. The technique also provides a reliable measurement of the active region doping level which is in very good agreement with the values calculated from the composition of the growth solutions.
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42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Jb Light-emitting devices

Metalorganic chemical vapor deposition of very thin (≂2 μm), oriented GaAs layers on tungsten substrates

S. K. Shastry

Appl. Phys. Lett. 41, 836 (1982); http://dx.doi.org/10.1063/1.93711 (3 pages) | Cited 1 time

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This letter describes a novel technique for the deposition of very thin (≂2 μm), pinhole‐free gallium arsenide layers, with large grains (≂ 7 μ) and (110) preferred orientation, on tungsten substrates, by the metalorganic chemical vapor deposition process (MOCVD). The deposition was performed at ∼930 °C with a controlled undercooling of 2°/min, and under a high trimethylgallium flux, corresponding to a gallium arsenide growth rate of 0.4 μm/min. The deposition process is explained by the vapor‐liquid‐solid growth mechanism in which gallium arsenide, in the chemical vapor deposition environment, is formed as in solution growth. The need for undercooling during the deposition process is outlined in terms of gallium arsenide nucleation. It is proposed that such nucleation in CVD occurs by a priori nucleation of gallium, and by subsequent supersaturation of these gallium nuclei by arsenic.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.60.Nh Thermodynamics of nucleation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Species and deposition angle dependence of ion beam induced densification of germanium selenide films

T. Venkatesan and B. J. Wilkens

Appl. Phys. Lett. 41, 839 (1982); http://dx.doi.org/10.1063/1.93712 (3 pages) | Cited 2 times

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The ion beam induced densification of obliquely deposited germanium selenide films shows strong dependence on the irradiating species and the deposition angle of the film. For a film deposited at 75° the Ar+ and Ne+ irradiations follow the simple statistics to be expected if each ion resulted in a compressed cylinder along the ion’s path. The He+ and H+ irradiations do not produce densification that follows similar statistics, indicating a strong nonlinearity of the irradiation phenomenon with respect to the energy deposited by the ions. The energy density in the track of an ion seems to be the relevant parameter rather than the total deposited energy. Films deposited at larger angles densify at lower ion doses. This can be understood if the low density of the as‐deposited films depends on two types of voids, enclosed and canyonlike. Based on electron microscope pictures we propose that the films deposited at larger angles are dominated by canyonlike voids (which are easier to fill in by irradiation) whereas films deposited at smaller angles contain more of enclosed voids (which are harder to fill in by irradiation).
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81.15.Jj Ion and electron beam-assisted deposition; ion plating

Properties of high quality GaP single crystals grown by computer controlled liquid encapsulated Czochralski technique

Y. Kokubun, S. Washizuka, J. Ushizawa, M. Watanabe, and T. Fukuda

Appl. Phys. Lett. 41, 841 (1982); http://dx.doi.org/10.1063/1.93713 (3 pages)

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The properties of GaP single crystals grown by an automatically diameter controlled liquid encapsulated Czochralski technique using a computer have been studied. A dislocation density less than 5×104 cm−2 has been observed for crystal grown in a temperature gradient lower than 70 °C/cm near the solid‐liquid interface. Crystals have about 10% higher electron mobility than that of commercially available coracle controlled crystals and have 0.2∼0.5 compensation ratios. Yellow light emitting diodes using computer controlled (100) substrates have shown extremely high external quantum efficiency of 0.3%.
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72.80.Ey III-V and II-VI semiconductors
81.10.Fq Growth from melts; zone melting and refining
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.60.Fi Electroluminescence

Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

H. L. Hwang, C. C. Hwu, J. C. Liue, and H. H. Lin

Appl. Phys. Lett. 41, 844 (1982); http://dx.doi.org/10.1063/1.93714 (3 pages) | Cited 4 times

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See Also: Erratum

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Rutherford backscattering spectrometry channeling was found effective in composition and impurity analysis of silicon nitride films, and conditions to deposit stoichiometric Si3N4 by low‐pressure chemical vapor deposition are obtained. The as‐determined N/Si ratio is not correlated with the measured refractive index, and a possible interpretation is discussed. Also, the inhomogeneity problem of the nitride films is examined.
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77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.-p Physical properties of thin films, nonelectronic
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