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1 Nov 1982

Volume 41, Issue 9, pp. 779-897

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Suppression effect upon oxygen precipitation in silicon by carbon for a two‐step thermal anneal

Masanobu Ogino

Appl. Phys. Lett. 41, 847 (1982); http://dx.doi.org/10.1063/1.93715 (3 pages) | Cited 24 times

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The suppression effect on oxygen precipitation by carbon was observed under a certain heat treatment condition. The amount of precipitate oxygen in a high carbon silicon crystal is less than that in a low carbon silicon crystal, when silicon crystals are heat treated by the two‐step thermal anneal (700 °C anneal+1000 °C anneal), whose first step annealing time is long. This is caused by the generation of too many precipitate nuclei during the first step thermal anneal. Growth rate for small precipitates is retarded. Carbon has the enhancement effect on oxygen precipitation during the first step anneal at 700 °C, but no enhancement effects during the second step anneal at 1000 °C.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.-y Defects and impurities in crystals; microstructure

Trap creation in channel oxides due to ion penetration of polycrystalline silicon

R. K. Smeltzer

Appl. Phys. Lett. 41, 849 (1982); http://dx.doi.org/10.1063/1.93716 (3 pages)

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Deep penetration of polycrystalline silicon by high‐energy phosphorus ions was shown to produce large concentrations of hole traps in metal‐oxide‐semiconductor devices. An excess concentration of hole traps was found to exist even in devices whose characteristics were initially unaffected by the deep tail on the phosphorus implantations. To detect the presence of the traps, devices were subjected to ionizing radiation which produces free carriers in the channel oxide. A strong dependence of hole trap generation on the implantation dose was found up to very high doses. A secondary ion mass spectrometry profile of implanted phosphorus in polysilicon also clearly shows a large phosphorus concentration in the deep tail of the implantations.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects

Tunable electroluminescence from GaAs doping superlattices

H. Künzel, G. H. Döhler, P. Ruden, and K. Ploog

Appl. Phys. Lett. 41, 852 (1982); http://dx.doi.org/10.1063/1.93717 (3 pages) | Cited 18 times

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The first observation of strongly tunable electroluminescence from a new type of semiconductor superlattice is reported. We achieved a shift of the electroluminescence peak energy by several hundred millielectron volts below the gap of pure GaAs, when electrons and holes are injected over long distances via selective electrodes. This directly reflects the tunability of the indirect gap in real space, which is a unique feature of doping superlattices. The results further demonstrate that with increasing doping concentration of the constituent superlattice layers the luminescence frequency can be tuned over an even wider range. This behavior agrees well with our calculations.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Temperature dependence of minority‐carrier recombination velocities at grain boundaries in silicon

C. H. Seager

Appl. Phys. Lett. 41, 855 (1982); http://dx.doi.org/10.1063/1.93675 (3 pages) | Cited 6 times

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Measurements have been made of the temperature dependence of grain boundary minority‐carrier recombination velocities in p‐type polycrystalline silicon. This temperature dependence is found to be close to that observed for the dark resistance to across‐boundary majority‐carrier currents. We discuss this result in light of recent theoretical calculations of this effect.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High‐field drift velocity of holes in inversion layers on silicon

D. F. Nelson, J. A. Cooper, and A. R. Tretola

Appl. Phys. Lett. 41, 857 (1982); http://dx.doi.org/10.1063/1.93676 (3 pages) | Cited 6 times

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We report measurements of the room‐temperature drift velocity of holes along the (100) Si‐SiO2 interface (drift direction [011]) as obtained by a time‐of‐flight technique. Our measured values range up to 60% higher than previously reported values at comparable tangential and normal electric fields. An empirical equation that fits the low‐field mobility and the high‐field velocity as a function of tangential and normal fields is presented.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Ht High-field and nonlinear effects
73.25.+i Surface conductivity and carrier phenomena

Electrolyte electroreflectance study of laser annealing effects on the CdTe/Hg0.8Cd0.2Te (111) system

P. M. Amirtharaj, Fred H. Pollak, J. R. Waterman, and P. R. Boyd

Appl. Phys. Lett. 41, 860 (1982); http://dx.doi.org/10.1063/1.93677 (3 pages) | Cited 8 times

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We have investigated the effects of laser annealing on the CdTe/Hg0.8Cd0.2Te (111) system by measuring the electrolyte electroreflectance (EER) spectra from both the CdTe layer as well as the interface region. The sample was a Hg0.8Cd0.2Te (111) single crystal with a 500‐Å‐thick polycrystalline CdTe film deposited on it; a section of the interface was annealed using the neodymium: yttrium aluminum garnet (Nd:YAG) laser 1.06‐μm line. Our observations indicate the presence of strain due to lattice mismatch at the interface; laser annealing relieves this strain. In addition, the annealing also causes the diffusion of Hg ions from the interfacial region into the passivant layer. The changes in the line shapes of the EER spectra also show an improvement in the crystalline quality of the passivant layer.
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78.20.-e Optical properties of bulk materials and thin films
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Tv Optical and dielectric properties related to treatment conditions
73.40.-c Electronic transport in interface structures

Deep photoluminescence band related to oxygen in gallium arsenide

Phil Won Yu and D. C. Walters

Appl. Phys. Lett. 41, 863 (1982); http://dx.doi.org/10.1063/1.93678 (3 pages) | Cited 34 times

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Temperature‐dependent photoluminescence and photoluminescence excitation spectroscopy have been used to measure the 0.63‐eV luminescence band present in O‐doped semi‐insulating GaAs. It is shown that the 0.63‐eV band is related to the presence of O. The center responsible for the band forms a deep level similar to the main deep donor EL2. However, spark source mass spectrometry indicates that incorporation of O into GaAs is difficult.
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78.40.Fy Semiconductors
63.20.K- Phonon interactions

Physical properties of sputtered chalcogenide films with a variable content of Fe

A. Bornstein, I. Lewin, Y. Lereah, and N. Croitoru

Appl. Phys. Lett. 41, 866 (1982); http://dx.doi.org/10.1063/1.93679 (3 pages) | Cited 3 times

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Thin films of the system (As13Te24Si27Sb18)1−xFex have been deposited by rf sputtering in argon from the powder of the corresponding composition. Structure and composition analyses have been performed using electron microscopy, electron diffraction, and electron probe x‐ray microanalysis. Using these analyses, the amorphous structure and homogeneity of the material in the films have been verified. The Fe content x varies between 0 and 0.6. Electrical transport measurements have been performed at different temperatures between 77 and 400 K for 0≤x≤0.6, and the thermoelectric power measured at room temperature. Optical reflection and transmission measurements have also been made at room temperature for several values of x. From the conductivity measurements, thermoelectric power, and optical measurements, we found that the amorphous films show metallic behavior for x≥0.4. On the basis of the above measurements, we suggest an energy‐band model which fits the experimental results.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Pa Thermoelectric and thermomagnetic effects

Relation of stimulated and spontaneous transitions in tunneling structures to the elastic current‐voltage characteristic

S. R. Whiteley, L. Z. Xie, R. Hemphill, and T. K. Gustafson

Appl. Phys. Lett. 41, 868 (1982); http://dx.doi.org/10.1063/1.93680 (3 pages) | Cited 1 time

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The stimulated emission and absorption of surface plasma modes by inelastic scattering of tunneling electrons is considered. It is shown that the net absorption rate is proportional to the current difference between points ±ℏω/e about the bias point on the elastic current‐voltage characteristic. In particular, this can be negative implying the possibility of net stimulated emission over a large bandwidth. The relationship to photon assisted tunneling theory is considered.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling

Excess solubility of oxygen in silicon during steam oxidation

J. C. Mikkelsen

Appl. Phys. Lett. 41, 871 (1982); http://dx.doi.org/10.1063/1.93681 (3 pages) | Cited 35 times

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18O was introduced into float‐zone Si wafers during oxidation in H2 18O at temperatures from 600–1240 °C, and the 18O concentration profiles were measured by secondary ion mass spectrometry. The oxygen solubility, as determined from the surface 18O concentrations, was found to be significantly higher in as‐oxidized wafers than in post‐oxidation annealed wafers. The temperature dependence of the as‐oxidized solubility, Sox, can be described by Sox(T)=1.2×1020 cm−3 exp(−0.67 eV/kT), with a higher activation energy of 1.02 eV for the equilibrium solubility. These results are compared with other published oxygen solubility determinations.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
64.75.-g Phase equilibria
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

An enhancement mode Schottky barrier gate charge‐coupled device on a high electron mobility transistor structure

Y. Z. Liu

Appl. Phys. Lett. 41, 874 (1982); http://dx.doi.org/10.1063/1.93682 (3 pages)

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An enhancement mode charge‐coupled device (CCD) was fabricated for the first time on a selectively doped n‐GaAlAs/p−‐GaAs heterojunction structure. A dramatic improvement in charge‐transfer efficiency (CTE) was observed as the CCD is cooled from 300 to 77 °K. This improvement is attributed to the increase in low field electron mobility of the two‐dimensional electron gas at low temperature. Charge capacity was also found to increase upon cooling. The cause is not well understood. An optimized structure for high‐speed CCD is proposed.
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85.30.Hi Surface barrier, boundary, and point contact devices

Simultaneous formation of a shallow silicon p‐n junction and a shallow silicide/silicon ohmic contact by an ion implantation technique

B‐Y. Tsaur and C. H. Anderson

Appl. Phys. Lett. 41, 877 (1982); http://dx.doi.org/10.1063/1.93683 (3 pages) | Cited 3 times

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An ion implantation technique has been developed for the simultaneous formation of a shallow Si p‐n junction and a shallow silicide/Si ohmic contact. A p‐Si substrate is coated with a thin layer of W, then with alternating layers of Si and W. Bombardment of the coated substrate with As+ ions causes formation of WSi2 from the W and Si layers, dispersion of contaminant atoms at the interface between the first W layer and the substrate, and implantation of As atoms in the substrate. Subsequent thermal annealing produces a shallow WSi2/Si ohmic contact and simultaneously activates the implanted As donors to form a shallow p‐n junction located directly below the contact. Mesa diodes with good junction characteristics have been fabricated by using this technique.
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61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
85.30.Kk Junction diodes

Magneto‐optical detection of deep acceptor impurities in p‐InSb

C. L. Littler, D. G. Seiler, R. Kaplan, and R. J. Wagner

Appl. Phys. Lett. 41, 880 (1982); http://dx.doi.org/10.1063/1.93684 (3 pages) | Cited 5 times

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We report the first magneto‐optical experiments on Au‐doped p‐InSb and show how they can be used to detect and identify impurities in semiconductor materials. A ground state binding energy of 42.5±0.5 meV has been determined for the lower level of the Au double acceptor in InSb. The technique also provides information about the magnetic field dependence of the excited states associated with a deep acceptor level.
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78.40.Fy Semiconductors
78.20.Ls Magneto-optical effects
72.40.+w Photoconduction and photovoltaic effects
78.30.-j Infrared and Raman spectra

ac Josephson effect in small‐area superconducting tunnel junctions at 604 GHz

W. C. Danchi, F. Habbal, and M. Tinkham

Appl. Phys. Lett. 41, 883 (1982); http://dx.doi.org/10.1063/1.93685 (3 pages) | Cited 15 times

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We have measured the ac Josephson effect in small‐area superconducting tunnel junctions at 604 GHz (λ=496 μm) using a resonant planar dipole antenna to couple the radiation into the junction. In a 176‐Ω junction, we have observed up to the 7th Josephson step (at 8.75 mV), a performance comparable to that seen in point contacts. We also compare our data with the results of the RSJ model and of the Werthamer theory.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.N- Response to electromagnetic fields

Logic delays of 5‐μm resistor coupled Josephson logic

J. Sone, T. Yoshida, S. Tahara, and H. Abe

Appl. Phys. Lett. 41, 886 (1982); http://dx.doi.org/10.1063/1.93686 (3 pages) | Cited 6 times

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Logic delays of resistor coupled Josephson logic (RCJL) have been investigated. An experimental circuit with a cascade chain of ten RCJL OR gates was fabricated using Pb‐alloy Josephson IC technology with 5‐μm minimum linewidth. Logic delay was measured to be as low as 10.8 ps with power dissipation of 11.7 μW. This demonstrates a switching operation faster than those reported for other Josephson gate designs. Comparison with computer‐simulation results is also presented.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
07.50.Ek Circuits and circuit components

New inorganic electron resist system for high resolution lithography

B. Singh, S. P. Beaumont, P. G. Bower, and C. D. W. Wilkinson

Appl. Phys. Lett. 41, 889 (1982); http://dx.doi.org/10.1063/1.93687 (3 pages) | Cited 13 times

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A new Ag2S/As2S3 negative electron resist system is proposed for nanostructure fabrication. Linear gaps down to 30 nm wide have already been resolved. Sensitization of the Ag2S3 with a chemically deposited layer of Ag2S overcomes the limitations involved in the use of silver halides as a source of silver. Although the sensitivity of this resist is very low (4×10−3–10−2 C/cm2) its extremely high contrast (γ>5.5) is an advantage in nanostructure fabrication where it is necessary to discriminate against exposure by backscattered electrons.
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81.05.Kf Glasses (including metallic glasses)
61.80.Fe Electron and positron radiation effects
85.40.Bh Computer-aided design of microcircuits; layout and modeling
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Photoelectrochemical cells based on GaAs0.6P0.4 epilayers: Stabilization and luminescent properties

William S. Hobson and Arthur B. Ellis

Appl. Phys. Lett. 41, 891 (1982); http://dx.doi.org/10.1063/1.93688 (3 pages) | Cited 7 times

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Stable, efficient photoelectrochemical cells (PEC’s) have been constructed from an n‐type material used in light‐emitting diode (LED) fabrication. The photoelectrode, which consists of an epilayer of GaAs0.6P0.4 on a graded layer terminating in a GaAs substrate, can be used in a PEC employing aqueous ditelluride electrolyte to convert 457.9‐nm light to electrical energy with efficiencies which routinely exceed 16% at incident intensities of ∼10 mW/cm2. Photoluminescence from these electrodes can be substantially quenched by the passage of photoanodic current during PEC operation.
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84.60.Jt Photoelectric conversion

Ablative hole formation process in thin tellurium and tellurium‐alloy films

M. Chen, V. Marrello, and U. G. Gerber

Appl. Phys. Lett. 41, 894 (1982); http://dx.doi.org/10.1063/1.93689 (3 pages) | Cited 13 times

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Static measurement data of contrast ratio versus laser power of single layer Te and Te alloys on polymethylmethacrylate substrates are reported. It is shown that these films can exhibit two regimes of hole formation depending upon laser power. In the lower power regime hole opening must be initiated by voids in the film while for higher powers voids are not necessary for hole opening. This interpretation leads to a better understanding of the hole ablation process as well as some practical consequences.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.62.-b Laser applications
89.20.Bb Industrial and technological research and development
FREE

Erratum: Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers [Appl. Phys. Lett. 40, 747 (1982)]

D. W. Jillie, H. Kroger, L. N. Smith, E. J. Cukauskas, and M. Nisenoff

Appl. Phys. Lett. 41, 897 (1982); http://dx.doi.org/10.1063/1.93722 (1 page)

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Abstract Unavailable
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74.50.+r Tunneling phenomena; Josephson effects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
85.25.-j Superconducting devices
99.10.Cd Errata
FREE

Erratum: Plasma bubble domains: A magnetic bubble analog [Appl. Phys. Lett. 41, 28 (1982)]

David G. Boyers and William A. Tiller

Appl. Phys. Lett. 41, 897 (1982); http://dx.doi.org/10.1063/1.93723 (1 page)

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Abstract Unavailable
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52.80.Hc Glow; corona
52.75.-d Plasma devices
85.60.Jb Light-emitting devices
85.60.Pg Display systems
99.10.Cd Errata
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