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1 Jan 1983

Volume 42, Issue 1, pp. 1-125

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12× pulse compression using optical fibers

B. Nikolaus and D. Grischkowsky

Appl. Phys. Lett. 42, 1 (1983); http://dx.doi.org/10.1063/1.93749 (2 pages) | Cited 41 times

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We report a factor of 12 compression of the 5.4‐ps, 1‐kW pulses from a mode‐locked dye laser. The pulses were frequency broadened and linearly chirped by the combined action of self‐phase modulation and group velocity dispersion during passage through a 30‐m single‐mode optical fiber. The fiber output pulses were then compressed to 450‐fs, 3‐kW pulses by passage through a diffraction grating based dispersive delay line. These short pulses were tunable over the 300‐Å range of the laser dye.
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42.65.-k Nonlinear optics
42.81.-i Fiber optics

Rate and efficiency of I2 dissociation in the presence of O2(1Δ)

G. N. Hays and G. A. Fisk

Appl. Phys. Lett. 42, 3 (1983); http://dx.doi.org/10.1063/1.93758 (3 pages) | Cited 5 times

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We adopt a simplified kinetic scheme to account for the functional dependence of the observed, rapid dissociation of I2 in the presence of O2(1Δ). Phenomenologically, the functional form for I2 disappearance was found to be d[I2]/dt=−[(6±4)×10−29 cm6 s−1][I2][O2(1Δ)]2 for O2(1Δ) concentrations greater than 25 mTorr. Moreover, analysis of our data indicates that three O2(1Δ) molecules are expended in producing two iodine atoms.
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82.20.Pm Rate constants, reaction cross sections, and activation energies
78.60.Ps Chemiluminescence
42.55.Ks Chemical lasers

Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers

K. J. Ebeling, L. A. Coldren, B. I. Miller, and J. A. Rentschler

Appl. Phys. Lett. 42, 6 (1983); http://dx.doi.org/10.1063/1.93729 (3 pages) | Cited 20 times

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Monolithic two‐section GaInAsP/InP lasers are shown to operate in a single longitudinal mode under high‐speed pulsed current modulation. The length of the emitted monomode light pulses is less than 500 ps. The suppression of secondary modes is described in a rate equation model that is generally useful for a variety of coupled‐cavity configurations. It is found that 10% increase in cavity loss for the unwanted modes is sufficient to provide 17 dB suppression.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.60.By Design of specific laser systems

Soft x‐ray pumping of metastable levels of Li+

R. G. Caro, J. C. Wang, R. W. Falcone, J. F. Young, and S. E. Harris

Appl. Phys. Lett. 42, 9 (1983); http://dx.doi.org/10.1063/1.93742 (3 pages) | Cited 10 times

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Soft x rays from a plasma generated by a neodymium: yttrium aluminum garnet laser beam (1.06 μm) are used to photoionize neutral Li vapor to produce Li+ metastables. Maximum metastable densities of Li+ (1s2s) 1S=6×1014 ions/cm3 and Li+ (1s2s) 3S=3×1015 ions/cm3 are obtained. The effective lifetimes of these levels are measured to be approximately 5 ns. At 50 mJ of incident laser energy the inferred conversion efficiency from 1.06‐μm radiation to soft x rays is ∼14%.
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42.62.-b Laser applications
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
32.30.Rj X-ray spectra
32.80.Fb Photoionization of atoms and ions

Polarization coupling effects in transversely excited atmospheric CO2 lasers: Application to single axial mode operation

A. K. Kar, R. G. Harrison, D. M. Tratt, and C. A. Emshary

Appl. Phys. Lett. 42, 12 (1983); http://dx.doi.org/10.1063/1.93746 (3 pages) | Cited 8 times

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We report the observation of anomalous polarization coupling effects occurring in injection‐locked transversely excited atmospheric (TEA) CO2 lasers, deduced from studies of the injection detuning parameter under varying conditions of polarization and injection power. For the special case of injection with orthogonally polarized radiation we have determined the existence of an optimum operation point, exhibiting minimum sensitivity of single mode operation to the detuning parameter. Off‐resonance injection locking of untuned TEA cavities is also discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Influence of lateral waveguiding properties on the longitudinal mode spectrum for semiconductor lasers

Bernhard Stegmüller

Appl. Phys. Lett. 42, 15 (1983); http://dx.doi.org/10.1063/1.93747 (2 pages) | Cited 5 times

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The direct dependence of the longitudinal mode spectrum on active and passive waveguiding and stripewidth of metal‐cladded ridge‐waveguide‐stripe lasers is presented. Since the investigated lasers originate from the same epitaxial wafer, the influence of other laser parameters, such as layer characteristics and material quality, can be neglected. Experimental results agree well with a theory, based on the spontaneous emission coefficient as the dominant parameter, which is affected by the curvature of wave fronts.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Structure‐dependent threshold current density in InGaAsP quantum well lasers

Akira Sugimura

Appl. Phys. Lett. 42, 17 (1983); http://dx.doi.org/10.1063/1.93748 (3 pages) | Cited 12 times

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Threshold current density is studied theoretically for InGaAsP multiple quantum well lasers by including the Auger recombination process. All the possible transitions between quantized subbands of two‐dimensional carriers are taken into account in evaluating radiative and Auger processes. The Auger recombination current depends strongly on the quantum well structure, resulting in the necessity for an elaborate structure design. A design procedure is elucidated for the structure which gives the lowest threshold current density for InGaAsP multiple quantum well lasers.
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42.55.Px Semiconductor lasers; laser diodes

Discharge pumped ZnI (599–606 nm) and CdI (653–662 nm) amplifiers

D. P. Greene and J. G. Eden

Appl. Phys. Lett. 42, 20 (1983); http://dx.doi.org/10.1063/1.93750 (3 pages) | Cited 6 times

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Peak small‐signal gain coefficients (γ0) of 2.0% cm−1 and 0.7% cm−1 have been obtained on the B→X bands of CdI (cadmium monoiodide) and ZnI, respectively, in a UV‐preionized, high‐temperature (650≲T≲710 K) transverse discharge. For CdI, γ0 is greater than 1% cm−1 over a 90‐Å (653≤λ≤662 nm) spectral region.
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34.80.Gs Molecular excitation and ionization
33.20.Kf Visible spectra
52.80.-s Electric discharges
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Improved lifetimes of (GaAl)As visible (740 nm) lasers by reducing bonding stress

T. Hayakawa, N. Miyauchi, S. Yamamoto, H. Hayashi, S. Yano, and T. Hijikata

Appl. Phys. Lett. 42, 23 (1983); http://dx.doi.org/10.1063/1.93751 (2 pages) | Cited 4 times

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It is shown that the active layer stress caused by the bonding process can be reduced by setting the thicknesses of the cap layer and the substrate at the appropriate values. The life test of the (GaAl)As V‐channeled substrate inner stripe lasers emitting at 740 nm, 50 °C demonstrated that the lifetime is considerably improved by the introduction of the thick cap layer (∼40 μm) and the thinned substrate (∼80 μm).
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42.55.Px Semiconductor lasers; laser diodes

Direct gain modulation of a semiconductor laser by a GaAs picosecond optoelectronic switch

E. O. Göbel, G. Veith, J. Kuhl, H.‐U. Habermeier, K. Lübke, and A. Perger

Appl. Phys. Lett. 42, 25 (1983); http://dx.doi.org/10.1063/1.93752 (3 pages) | Cited 13 times

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We report a novel application of high‐speed optoelectronic switches for direct gain modulation of semiconductor lasers. A GaAs/GaAlAs buried heterostructure laser is driven by a Cr‐doped GaAs photoconducting switch activated by a synchronously mode‐locked cw dye laser. Infrared light pulses of 55‐ps width are emitted from the semiconductor laser.
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85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes

Dynamic and noise properties of multiple quantum well injection lasers

C. Lindström, D. R. Scifres, and R. D. Burnham

Appl. Phys. Lett. 42, 28 (1983); http://dx.doi.org/10.1063/1.93753 (3 pages) | Cited 4 times

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The fast pulse response and the dc noise spectra of multiple quantum well lasers grown by metalorganic chemical vapor deposition and with different stripe widths are reported. A best rise time of 100 ps corresponding to a modulation bandwidth of ∼3.6 GHz, was obtained. The dc noise spectra showed a damped shot noise resonance at a high frequency (∼3.0 GHz). The improvement in pulse and noise performances of these lasers compared to conventional double heterostructure lasers is explained with the small active volume and the high charge densities present in quantum well lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Imaging through a distorting medium with and without phase conjugation

Jack Feinberg

Appl. Phys. Lett. 42, 30 (1983); http://dx.doi.org/10.1063/1.93754 (3 pages) | Cited 9 times

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The problem of sending an optical image through a phase‐distorting medium is discussed. It is shown that a simple lens is sufficient for transmitting the intensity of an image through a thin distorter. A phase conjugator and a lens can transmit the amplitude of an image through a thin distorter. Neither can transmit an undistorted image through a thick distorter. These results are experimentally verified using a self‐pumped phase conjugator.
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42.30.Va Image forming and processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.68.Sq Image transmission and formation

Photoacoustic generation and detection of 10‐ns acoustic pulses in solids

A. C. Tam and H. Coufal

Appl. Phys. Lett. 42, 33 (1983); http://dx.doi.org/10.1063/1.93755 (3 pages) | Cited 42 times

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We describe the generation and detection of short acoustic pulses (∼10‐ns widths) in opaque plates, using weak laser pulses (less than 1‐mJ energy) for excitation. The longitudinal, shear, and surface acoustic waves generated by a single laser pulse can be time resolved by using a thin‐film piezoelectric transducer, and acoustic mode conversions at surfaces are clearly observable. This new photoacoustic material testing technique is useful for fast ultrasonic measurements or for detecting deep subsurface flaws.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
62.30.+d Mechanical and elastic waves; vibrations
43.58.+z Acoustical measurements and instrumentation

Ion bombardment control of morphology during the growth of hydrogenated amorphous silicon thin films by reactive ion beam deposition

A. Kasdan and D. P. Goshorn

Appl. Phys. Lett. 42, 36 (1983); http://dx.doi.org/10.1063/1.93756 (3 pages) | Cited 2 times

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Low‐energy ion bombardment of hydrogenated amorphous silicon thin films during growth is shown to have a pronounced effect on growth morphology. The films studied have been prepared by reactive ion beam sputtering. For substrate temperatures ≳200 °C and hydrogen content in the films ≳20 at. %, a growth instability develops, which results in a rough film morphology. Ion bombardment during growth stabilizes the film growth, and results in smooth morphologies.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
79.20.Ds Laser-beam impact phenomena
68.55.-a Thin film structure and morphology

10‐nm linewidth electron beam lithography on GaAs

H. G. Craighead, R. E. Howard, L. D. Jackel, and P. M. Mankiewich

Appl. Phys. Lett. 42, 38 (1983); http://dx.doi.org/10.1063/1.93757 (3 pages) | Cited 60 times

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Metal features with 10‐nm linewidths were produced on thick GaAs substrates using electron beam lithography. A single layer of polymethylmethacrylate (PMMA) was exposed by an approximately 2‐nm‐diam electron beam with energies ranging from 20 to 120 keV. Gold‐palladium lines less than 20 nm wide, and 15 nm thick, with center‐to‐center spacings of 70 nm, were produced over 15‐μm square fields at all electron beam energies by lift off. The exposure latitude increased significantly for higher electron energies, with 10‐nm‐wide metal lines formed using a 120‐keV writing beam.
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81.20.-n Methods of materials synthesis and materials processing
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Low dose depth distribution of recoil implanted atoms

G. Falcone and A. Oliva

Appl. Phys. Lett. 42, 41 (1983); http://dx.doi.org/10.1063/1.93759 (3 pages) | Cited 4 times

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Recoil implantation of atoms from a layer deposited on a substrate is described in terms both of the linear cascade theory and of the continuous slowing down approximation. The model is valid within the limit of low incident ion doses and for layer thicknesses large enough to contain the main part of the deposited energy. Results are compared to experimental data with satisfactory agreement. Ad hoc experiments can give information concerning the interactions of atoms colliding at low energy.
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61.72.U- Doping and impurity implantation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Cerium‐activated Gd2SiO5 single crystal scintillator

Kazumasa Takagi and Tokuumi Fukazawa

Appl. Phys. Lett. 42, 43 (1983); http://dx.doi.org/10.1063/1.93760 (3 pages) | Cited 81 times

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Cerium‐activated phosphors are characterized by their fast luminescence decay. Gadolinium orthosilicate (Gd2SiO5) is a material possessing a high atomic number, and can also play host to the cerium activator. Cerium‐doped Gd2SiO5 single crystals were grown by the Czochralski technique, and their luminescence properties were examined. The light output was 1.3 times larger than that of the best Bi4Ge3O12, and the decay constant was 60 ns at room temperature.
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78.70.-g Interactions of particles and radiation with matter
78.45.+h Stimulated emission
87.85.-d Biomedical engineering
81.10.Fq Growth from melts; zone melting and refining

Structural difference rule for amorphous alloy formation by ion mixing

Bai‐Xin Liu, W. L. Johnson, M‐A. Nicolet, and S. S. Lau

Appl. Phys. Lett. 42, 45 (1983); http://dx.doi.org/10.1063/1.93767 (3 pages) | Cited 141 times

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We formulate a rule which establishes a sufficient condition that an amorphous binary alloy will be formed by ion mixing of multilayered samples when the two constituent metals are of different crystalline structure, regardless of their atomic sizes and electronegativities. The rule is supported by the experimental results we have obtained on six selected binary metal systems, as well as by the previous data reported in the literature. The amorphization mechanism is discussed in terms of the competition between two different structures resulting in frustration of the crystallization process.
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81.05.Kf Glasses (including metallic glasses)
61.80.-x Physical radiation effects, radiation damage
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Observation of multiconfigurations for a vortex mode in long Josephson tunnel junctions

M. Scheuermann and J. T. Chen

Appl. Phys. Lett. 42, 48 (1983); http://dx.doi.org/10.1063/1.93768 (3 pages) | Cited 1 time

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Symmetric vortex‐antivortex and asymmetric vortex‐vortex modes have been observed in long Josephson tunnel junctions. These two modes manifest themselves as two nearly identical resistive branches in the current‐voltage characteristics. The voltage spacing between the symmetric vortex‐antivortex and the asymmetric vortex‐vortex modes is only about 3% of the voltage spacing between the first and second resistive branches. Except for a slight displacement in current these two modes almost completely overlap in voltage and current.
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74.50.+r Tunneling phenomena; Josephson effects
74.90.+n Other topics in superconductivity (restricted to new topics in section 74)
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
85.25.-j Superconducting devices

Changes in the local chemical composition during the Hg1−xCdxTe‐Al interface formation

R. R. Daniels, G. Margaritondo, G. D. Davis, and N. E. Byer

Appl. Phys. Lett. 42, 50 (1983); http://dx.doi.org/10.1063/1.93769 (3 pages) | Cited 20 times

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Photoemission spectroscopy experiments with a synchrotron radiation source demonstrate that Hg depletion occurs near the surface during Al deposition on Hg0.72Cd0.28Te. The measured interface position of the Fermi level suggests that this depletion influences the effective Schottky barrier height.
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81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.40.-c Electronic transport in interface structures

Interface states in GaAs/AlxGa1−xAs heterostructures grown by organometallic vapor phase epitaxy

Takashi Matsumoto, Pallab K. Bhattacharya, and M. J. Ludowise

Appl. Phys. Lett. 42, 52 (1983); http://dx.doi.org/10.1063/1.93770 (3 pages) | Cited 11 times

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The GaAs/AlxGa1−xAs interface grown by organometallic vapor phase epitaxy has been studied by transient capacitance techniques. No electron emissions have been observed from deep states at or near the interface of a GaAs/Al0.2Ga0.8As junction. Highly nonexponential transients were recorded for emissions near the interface, which arise from states with an apparent activation energy of 0.15 eV. Dominant deep traps were detected in the GaAs and Al0.2Ga0.8As in regions away from the interface. The implications of the results have been discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electric field induced heating of high mobility electrons in modulation‐doped GaAs‐AlGaAs heterostructures

Jagdeep Shah, A. Pinczuk, H. L. Störmer, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 42, 55 (1983); http://dx.doi.org/10.1063/1.93771 (3 pages) | Cited 48 times

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We report the simultaneous determination of the temperature and mobility of electrons in modulation‐doped multiple quantum well GaAs‐AlGaAs heterostructures as a function of applied electric field up to 150 V/cm. The decrease of high field mobility with increasing electron temperature is found to be much more rapid than the decrease of the low field mobility with the lattice temperature.
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72.20.Ht High-field and nonlinear effects
42.60.By Design of specific laser systems

Hot‐electron luminescence in aged electrodeposited CdSe liquid‐junction solar cell

R. P. Silberstein and Micha Tomkiewicz

Appl. Phys. Lett. 42, 58 (1983); http://dx.doi.org/10.1063/1.93724 (3 pages) | Cited 6 times

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We have utilized Raman spectroscopy and scanning Auger electron spectroscopy (AES) to probe the surface of polycrystalline, electrodeposited CdSe photoelectrodes which have been aged in a polysulfide electrolyte under illumination and in darkness. We have observed characteristic ‘‘hot‐electron’’ luminescence at multiples of ωLO (CdS)=305 cm−1 in the light‐aged electrode, indicating that a surface layer of CdS has been formed. AES profiling shows that extensive substitution of S for Se has occurred, in the light‐aged electrode alone, to a depth of ∼600 Å. Measurements at 300 K suggest that Raman scattering can be a useful, in situ, contactless, nondestructive probe of CdS formation.
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78.30.Hv Other nonmetallic inorganics
75.20.Ck Nonmetals
78.55.Hx Other solid inorganic materials
84.60.Jt Photoelectric conversion

Evidence for the creation of the main electron trap in bulk GaAs

G. M. Martin, P. Terriac, S. Makram‐Ebeid, G. Guillot, and M. Gavand

Appl. Phys. Lett. 42, 61 (1983); http://dx.doi.org/10.1063/1.93725 (3 pages) | Cited 15 times

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Ikoma and Tanigushi have recently proposed a procedure consisting of O or As ion implantation followed by a 600 °C anneal to create a midgap electron trap in GaAs. The question of the definite identification of this level with the native level EL2, the main electron trap always observed in bulk and vapor phase epitaxial materials, remained open. To answer this question, we performed photocapacitance transient experiments. In these experiments, the presence of EL2 is revealed unambiguously by an overshoot behavior in the photocapacitance transients. We have reproduced the experiment of Tanigushi and Ikoma using O, B, and Ne as implanted species. Our experiment has established that EL2 is created by O, B, or Ne implantation in bulk GaAs. When the same procedure is repeated with liquid phase epitaxial material, an electron trap is created at approximately the same energy level but the photocapacitance transient experiment shows that this level does not have the same properties as EL2.
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61.72.U- Doping and impurity implantation
78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors

Photon enhanced oxidation of silicon

Edwin M. Young and William A. Tiller

Appl. Phys. Lett. 42, 63 (1983); http://dx.doi.org/10.1063/1.93726 (3 pages) | Cited 37 times

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Experiments have been conducted to show that at low laser power densities the enhanced oxidation rate of silicon is linearly proportional to the photon flux density for photon energies in the range 2.4–2.7 eV. The enhancement effect is greater for 〈100〉 Si than for 〈111〉 Si.
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78.60.Ps Chemiluminescence
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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