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15 May 1983

Volume 42, Issue 10, pp. 845-914

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1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

H. Temkin, K. Alavi, W. R. Wagner, T. P. Pearsall, and A. Y. Cho

Appl. Phys. Lett. 42, 845 (1983); http://dx.doi.org/10.1063/1.93786 (3 pages) | Cited 63 times

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The first successful preparation of optically pumped and current injection Ga0.47In0.53As/Al0.48 In0.42As multiquantum well lasers is reported. These devices, operating at room temperature in the 1.5–1.6‐μm range, have been prepared by molecular beam epitaxy with well thicknesses as low as 80–90 Å and barrier thicknesses as low as 30 Å. In the broad area devices with a total active layer thickness of 0.14 μm we have observed threshold current density as low as 2.4 kA/cm2.
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42.55.Px Semiconductor lasers; laser diodes

Short cavity InGaAsP/InP lasers with dielectric mirrors

U. Koren, Z. Rav‐Noy, A. Hasson, T. R. Chen, K. L. Yu, L. C. Chiu, S. Margalit, and A. Yariv

Appl. Phys. Lett. 42, 848 (1983); http://dx.doi.org/10.1063/1.93787 (3 pages) | Cited 5 times

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Short cavity length (38 μm) lasers have been fabricated using a recently developed microcleavage technique. SiO2‐amorphous Si multilayer coatings have been evaported on the lasers to obtain high reflectivity mirrors. The lasers have current thresholds as low as 3.8 mA with 85% reflecting front mirror and high reflectivity rear mirror and 2.9 mA with two high reflectivity mirrors. Single longitudinal mode operation is observed over a wide range of driving currents and temperatures.
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42.55.Px Semiconductor lasers; laser diodes

New large optical cavity laser with distributed active layers

W. T. Tsang and N. A. Olsson

Appl. Phys. Lett. 42, 850 (1983); http://dx.doi.org/10.1063/1.93788 (3 pages) | Cited 2 times

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A new semiconductor current injection laser having multiple active layers distributed within a large optical cavity (LOC) waveguide is shown to operate as an efficient, low‐threshold, high‐peak power laser diode. The use of distributed active layers in LOC laser structure leads to improved efficiency in utilizing the injected carriers when compared to the conventional single active layer LOC laser structure.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology

A high‐power, single‐mode laser with twin‐ridge‐substrate structure

M. Wada, K. Hamada, H. Shimizu, T. Sugino, F. Tajiri, K. Itoh, G. Kano, and I. Teramoto

Appl. Phys. Lett. 42, 853 (1983); http://dx.doi.org/10.1063/1.93789 (2 pages) | Cited 15 times

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The structure of stripe‐geometry lasers is reported, in which a double heterostructure with a very thin active layer is fabricated on a substrate with two parallel ridges. It is shown that the structure is very much fitted for the high‐power, single‐mode oscillation. The maximum cw output obtained is approximately 100 mW/facet, which is the highest power output ever attained in fundamental transverse mode devices. The far‐field beam divergences parallel and perpendicular to the junction plane are as small as 6° and 16°, respectively.
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42.55.Px Semiconductor lasers; laser diodes

Spectral dependence of reversible optically induced transitions in organometallic compounds

R. C. Benson, R. C. Hoffman, R. S. Potember, E. Bourkoff, and T. O. Poehler

Appl. Phys. Lett. 42, 855 (1983); http://dx.doi.org/10.1063/1.93790 (3 pages) | Cited 28 times

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Optical switching in the class of semiconducting organometallic films such as copper and silver tetracyanoquinodimethane (CuTCNQ and AgTCNQ) can be erased using CO2 laser radiation. The effect can be observed by Raman spectroscopy and direct observation. Results on the wavelength and irradiance dependence of the optical switching threshold are also presented and interpreted in light of proposed switching mechanisms in these organic materials.
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07.05.Bx Computer systems: hardware, operating systems, computer languages, and utilities

Bistability and slow oscillation in an external cavity semiconductor laser

W. A. Stallard and D. J. Bradley

Appl. Phys. Lett. 42, 858 (1983); http://dx.doi.org/10.1063/1.93791 (2 pages) | Cited 8 times

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Reproducible bistable and hysteretical behavior is obtained from an external cavity laser, with one absorbing and one gain semiconductor diode, when the absorber diode is operated below its transparency threshold current density. The laser diodes are optically coupled without parasitic conductance or photoconductive electrical coupling and the bistable laser operates in a single longitudinal mode. Under certain conditions the laser oscillates at around 20 Hz with millisecond optical switching times.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.-k Nonlinear optics

Improved lasing performance of KrCl excimer laser

E. Armandillo, A. Luches, V. Nassisi, and M. R. Perrone

Appl. Phys. Lett. 42, 860 (1983); http://dx.doi.org/10.1063/1.93792 (2 pages) | Cited 13 times

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A compact, small active volume (70 cc) discharge pumped KrCl laser with UV preionization is described. The results obtained show that KrCl compares well with the performance obtainable from the well established XeCl and KrF lasers. Considerably improved laser output energy density (≂2.5 J/1) is achieved at very high discharge power loadings (≂24 MW/cc), with a good power conversion efficiency (0.8%) and a long gas static lifetime. The output laser beam is reproducible and uniform with a cross section of 2×1 cm2.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Hc Glow; corona

High‐resolution submillimeter‐wave radiometry of supersonic flow

G. F. Dionne, J. A. Weiss, J. F. Fitzgerald, H. R. Fetterman, and M. M. Litvak

Appl. Phys. Lett. 42, 862 (1983); http://dx.doi.org/10.1063/1.93793 (3 pages) | Cited 1 time

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The recent development of a high‐resolution submillimeter‐wave heterodyne radiometer has made possible the first measurements of H2O molecule rotational line excitation temperatures and detailed profiles in supersonic flow. Absorption signals were measured across the flow for the 211←202 (752 GHz) para‐H2O rotational transition against a hot background. These signals decrease downstream owing to the volume expansion of the gas away from the sonic nozzle exit in the high‐vacuum chamber. Radiative transfer calculations based on the large‐velocity‐gradient approximation and multilevel statistical equilibrium agree with these results and with the measured spectral line shapes. The data reveal nearly isentropic gas expansion and cooling. These studies have shown that submillimeter‐wave heterodyne radiometry can be useful for remote sensing of supersonic flow with low mass flux, provided the signal transmission is through a dry or thin atmosphere.
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34.50.Ez Rotational and vibrational energy transfer
42.25.Dd Wave propagation in random media
33.70.-w Intensities and shapes of molecular spectral lines and bands
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

D. S. Chemla, T. C. Damen, D. A. B. Miller, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 42, 864 (1983); http://dx.doi.org/10.1063/1.93794 (3 pages) | Cited 59 times

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We report the first observation of electroabsorption in GaAs/GaAlAs multiple quantum well structures. We have been able to induce Stark shifts for room‐temperature exciton resonances of ∼10 meV for applied field ∼1.6×104 V/cm in a sample with 96‐Å GaAs layers, giving large changes in optical absorption (e.g., a factor of 5 or ∼4×103 cm−1 increase). This should permit optical modulators with micron path lengths and potentially very fast operation.
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78.20.Jq Electro-optical effects

Electro‐optic effects of (Pb, La)(Zr, Ti)O3 thin films prepared by rf planar magnetron sputtering

Hideaki Adachi, Takao Kawaguchi, Kentaro Setsune, Kenzo Ohji, and Kiyotaka Wasa

Appl. Phys. Lett. 42, 867 (1983); http://dx.doi.org/10.1063/1.93795 (2 pages) | Cited 61 times

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Epitaxial (Pb, La)(Zr, Ti)O3 thin films were grown successfully on (0001) sapphire substrates at below 600 °C. High quadratic electro‐optic coefficient of 0.8×10−16 (m/V)2 was also obtained at 6328 Å. The rf planar magnetron sputtering process improved the quality of the film, which will be suitable for thin‐film integrated optic devices.
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
78.20.Jq Electro-optical effects
75.20.Ck Nonmetals

High resolution acoustic microscopy in superfluid helium

J. S. Foster and D. Rugar

Appl. Phys. Lett. 42, 869 (1983); http://dx.doi.org/10.1063/1.93796 (3 pages) | Cited 11 times

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An acoustic microscope has been developed which utilizes liquid helium at temperatures less than 0.2 K as the coupling medium. At the operating frequency of 4.2 GHz, the acoustic attenuation of the helium is negligible and the acoustic wavelength is 570 Å. Micrographs of a silicon integrated circuit are presented which demonstrate the good signal‐to‐noise ratio of the imaging and resolution better than 500 Å.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
67.25.dt Sound and excitations
68.37.-d Microscopy of surfaces, interfaces, and thin films
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

New oxide growth law and the thermal oxidation of silicon

S. M. Hu

Appl. Phys. Lett. 42, 872 (1983); http://dx.doi.org/10.1063/1.93797 (3 pages) | Cited 24 times

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A general kinetic law governing the thermal growth of oxide films is presented. It encompasses the Deal–Grove linear‐parabolic growth law and Blanc’s growth law as two special cases; it extends to more general cases where the interface reaction rate has a power‐law dependence on oxidant pressure, such as observed in the thermal oxidation of silicon, where neither the Deal–Grove nor the Blanc growth law is applicable. The new growth law is required even for oxidation under atmospheric pressure because of the varying oxidant pressure at the Si–SiO2 interface. Probable mechanisms for silicon oxidation are suggested.
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68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.90.+c Other topics in materials science (restricted to new topics in section 81)
66.30.J- Diffusion of impurities

Amorphization of germanium, gallium phosphide, and gallium arsenide by laser quenching from the melt

A. G. Cullis, H. C. Webber, and N. G. Chew

Appl. Phys. Lett. 42, 875 (1983); http://dx.doi.org/10.1063/1.93798 (3 pages) | Cited 3 times

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The direct formation of amorphous layers on (111) Ge, GaP, and GaAs crystals is demonstrated to occur when these are transiently melted with 2.5‐ns UV laser pulses below particular radiation energy density thresholds. Above these thresholds, the melt resolidification rate is reduced and in each case the (111) crystals exhibit a transition to a regime of profuse twin defect nucleation. Also for each material, laser melting of (001) crystal leads to defect‐free recrystallization when amorphization does not occur. All amorphous layers exhibit a cellular thickness modulation which may be due to a fundamental instability in the recrystallization interface.
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81.10.Fq Growth from melts; zone melting and refining

Effect of argon implantation on the activation of boron implanted in silicon

A. Milgram and M. Delfino

Appl. Phys. Lett. 42, 878 (1983); http://dx.doi.org/10.1063/1.93772 (3 pages) | Cited 4 times

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Argon ions were implanted either prior or subsequent to an ion implantation of boron into silicon wafers. After isochronal annealing at temperatures ranging from 500 to 900 °C, the samples were examined by a spreading resistance‐carrier concentration profile and secondary ion mass spectroscopy. It is shown that argon implantation at a dose sufficient to produce an amorphous layer inhibits the electrical activation and diffusion of boron implanted in silicon.
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61.72.U- Doping and impurity implantation
72.80.Cw Elemental semiconductors

Specific site location of S and Si in ion‐implanted GaAs

R. S. Bhattacharya, P. P. Pronko, and S. C. Ling

Appl. Phys. Lett. 42, 880 (1983); http://dx.doi.org/10.1063/1.93773 (3 pages) | Cited 21 times

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Rutherford backscattering and proton induced x‐ray emission in combination with channeling have been used to investigate the specific site location of S and Si implanted in GaAs through the asymmetry in their channeling dips. A pronounced asymmetry is observed for 〈110〉 scans parallel to the {110} plane in the case of S, whereas no such asymmetry is found for the case of Si. These results clearly indicate that S predominantly occupies one sublattice site which is shown to be the As site whereas Si occupies both Ga and As sites in about equal concentrations.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices

M. R. Chin and T. P. Ma

Appl. Phys. Lett. 42, 883 (1983); http://dx.doi.org/10.1063/1.93774 (3 pages) | Cited 26 times

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The density of radiation‐induced interface traps in a post‐metal‐annealed (PMA) Al‐gate metal‐oxide‐semiconductor (metal/SiO2/Si) depends strongly on the linewidth of the metal gate over a wide range (1–750 μm) of linewidths studied, although there is no discernible dependence prior to the irradiation. The dependence is such that the narrower the linewidth, the fewer the radiation‐induced interface traps. Such dependence has been generally observed for both p‐ and n‐type Si samples, for oxides grown in dry O2 or steam at temperatures over a wide range (900–1000 °C), and for PMA treatment either in dry N2 or in forming gas (10% H2+90% N2). The results can be qualitatively explained by a model based on the gate linewidth dependence of the SiO2/Si interfacial stress prior to irradiation, which affects the radiation sensitivity in accordance with the strained bond model.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.-x Physical radiation effects, radiation damage

High mobility in liquid phase epitaxial InGaAsP free of composition modulations

Maurice Quillec, Jean‐Louis Benchimol, Serge Slempkes, and Huguette Launois

Appl. Phys. Lett. 42, 886 (1983); http://dx.doi.org/10.1063/1.93775 (2 pages) | Cited 10 times

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InxGa1−xAsyP1−y epilayers lattice matched to InP were grown from the liquid phase at temperatures far above the commonly used temperature range. The goal was to get off the unstable region corresponding to compositions emitting in the wavelength range of 1.2 μm<λ<1.5 μm at 650 °C. In0.71Ga0.29As0.65P0.35 (λ=1.35 μm) layers thus grown have the highest electron Hall mobilities ever obtained in this material: μ300 K =7000 cm2/Vs and μ77 K =23 200 cm2/Vs for ND−NA =8.1014 cm−3. We suggest that a contribution to mobility limitation might be related to the composition modulations present in epilayers grown in the usual temperature range.
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81.10.Fq Growth from melts; zone melting and refining

Growth of single crystal epitaxial silicides on silicon by the use of template layers

R. T. Tung, J. M. Gibson, and J. M. Poate

Appl. Phys. Lett. 42, 888 (1983); http://dx.doi.org/10.1063/1.93776 (3 pages) | Cited 101 times

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A novel crystal growth technique for silicide epitaxy is presented which utilizes thin silicide (<60 Å) template layers to pin the subsequent growth under ultrahigh vacuum conditions. Single crystal NiSi2 films can be grown with either type A or type B orientations on Si (111). Continuous single crystal NiSi2 is grown on Si (100) with a flat interface and uniform thickness. Thick CoSi2 can be grown on Si (111) by a similar process using thicker templates.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Relation between current‐voltage characteristics and interface states at metal‐semiconductor interfaces

C. Barret and P. Muret

Appl. Phys. Lett. 42, 890 (1983); http://dx.doi.org/10.1063/1.93777 (3 pages) | Cited 14 times

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In the case of metal‐covalent semiconductor interfaces, the ‘‘pinning’’ of the metal Fermi level was attributed to large densities of interface states by Bardeen, 35 years ago. These interface states are usually thought to be in equilibrium with the metal. But capacitance measurements show unambiguously the existence of states in equilibrium with the semiconductor, even for cleaved contacts. Freeouf argued recently that this kind of states would influence I‐V characteristics. Here, some examples of such a correlation between interface states spectra and I‐V nonidealities are presented for Au‐InP and Au‐Si contacts.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Diffusion length of moles in n‐InP

V. Diadiuk, S. H. Groves, C. A. Armiento, and C. E. Hurwitz

Appl. Phys. Lett. 42, 892 (1983); http://dx.doi.org/10.1063/1.93778 (3 pages) | Cited 17 times

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By measuring the photocurrent as a function of reverse bias for InP photodiodes with a range of junction depths, the hole diffusion length Lp of epitaxial n‐type InP (n∼1.5×1016 cm−3) was determined to be approximately 12 μm. This value of Lp is an order of magnitude larger than that determined by the electron beam induced current and surface photovoltage techniques. Reasons for these discrepancies, which involve geometrical and material considerations, respectively, are discussed.
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72.80.Ey III-V and II-VI semiconductors
72.80.Jc Other crystalline inorganic semiconductors
72.70.+m Noise processes and phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Reversible photoinduced modification of electron‐capture cross section at localized states in a‐Si:H

H. Okushi, M. Miyagawa, Y. Tokumaru, S. Yamasaki, H. Oheda, and K. Tanaka

Appl. Phys. Lett. 42, 895 (1983); http://dx.doi.org/10.1063/1.93779 (3 pages) | Cited 8 times

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A reversible photoinduced modification of the electron‐capture cross section at localized states in P‐doped a‐Si:H has been directly observed, being associated with the Staebler–Wronski effect. Isothermal capacitance transient spectroscopy measurement shows that the electron‐capture cross section at the gap states located at around 0.5 eV below the conduction‐band mobility edge (Ec) increases after the band‐gap illumination and is nearly restored to its original value by thermal annealing below 200 °C. It has been suggested that a metastable state related with the dangling bond is created through the multiphonon emission when excess carriers recombine.
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76.60.Cq Chemical and Knight shifts
71.23.-k Electronic structure of disordered solids
71.55.Jv Disordered structures; amorphous and glassy solids

New dry etch for Al and Al‐Cu‐Si alloy: Reactively masked sputter etching with SiF4

Chris M. Horwitz

Appl. Phys. Lett. 42, 898 (1983); http://dx.doi.org/10.1063/1.93780 (3 pages) | Cited 1 time

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A new technique, ‘‘reactively masked sputter etching’’ of Al, is described here. This process can pattern fine lines in Al or in Al‐Cu‐Si alloy but does not have many of the problems associated with presently available reactive sputter etching methods. The technique combines deposition and etching in the one process; Al2O3, Al, and Al‐Cu‐Si alloy are etched, while all other materials are coated with a layer of SiOx. This results in essentially infinite (Al/mask) and (Al/substrate) etch rate ratios. In addition, the etch gas contains no Cl, which is a common cause of corrosion and undercut. In effect, the etch combines the advantages of both reactive and nonreactive sputter etching. The gas described here is a SiF4/O2 mixture, and it is shown that additions of most impurity gases have very little effect on the etch. However, water or H2 addition significantly improves the performance of the etch, and typical profiles are shown for a SiF4/O2/H2 mixture with a photoresist masking layer.
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81.15.Cd Deposition by sputtering
52.80.-s Electric discharges
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Extremely rapid outdiffusion of n‐type impurities in InP

A. K. Chin, I. Camlibel, B. V. Dutt, V. Swaminathan, W. A. Bonner, and A. A. Ballman

Appl. Phys. Lett. 42, 901 (1983); http://dx.doi.org/10.1063/1.93781 (3 pages) | Cited 4 times

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During sealed ampoule annealing at 550 °C, an unexpected, deep diffuson front was observed in n‐type InP crystals using defect etching and cathodoluminescence (CL) imaging. The diffusivities of the fronts were determined to be 1–5×10−8 cm2 s−1 which is approximately two orders of magnitude greater than that of the rapidly diffusing Zn impurity. By measuring the changes in the CL intensity and the photoluminescence linewidth to determine the changes in carrier concentration, the diffusion fronts were shown to be caused by the outdiffusion of the dopants. Although outdiffusion of Cr and Fe, affecting an ∼1 μm surface region during thermal annealing at 550 °C for 30 min, has previously been reported for InP, we believe this is the first reported observation of rapid outdiffusion of n‐type impurities that can affect InP crystals to a substantial depth (∼200 μm) for similar annealing conditions.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects

Instabilities in superconducting tunnel junctions in different thermal environments

J. G. Adler and T. A. Will

Appl. Phys. Lett. 42, 904 (1983); http://dx.doi.org/10.1063/1.93782 (2 pages)

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Instabilities in superconducting tunnel junctions have been studied in three environments: low pressure He gas, normal liquid He I, and superfluid He II. It is demonstrated that the effect arises at a bias voltage V0 where junction dissipation is sufficient to drive a region of the electrode(s) normal. The transition is accompanied by a small excess current, which is due to the appearance of electrode resistance and junction heating. For Pb electrode junctions immersed in liquid He the critical junction dissipation marks the outset of film boiling, which shows up as excessive noise in the tunneling curves. This critical heat flux, ≂1 W/cm2 at 4.2 K, limits the useful energy range for tunneling spectroscopy and leads to catastrophic burnout of high density Josephson arrays.
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74.50.+r Tunneling phenomena; Josephson effects

A fundamental noise limit for biased resistors at low temperatures

Makoto R. Arai

Appl. Phys. Lett. 42, 906 (1983); http://dx.doi.org/10.1063/1.93783 (3 pages) | Cited 33 times

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A biased resistor at low temperature T is modelled by a degenerate Fermi gas whose electrons scatter from phonons in thermal equilibrium and impurities while moving in the presence of a finite electric field E. A nonperturbative solution of the Boltzmann equation valid for thin films yields a Fermi‐like steady state distribution characterized by an effective temperature T∗ (>T). For large fields the energy scale (T∗) is set by the energy (eEl∗) absorbed in an inelastic mean free path (l∗∝T∗−3/2). This yields T∗ proportional to E2/5. At low temperatures and frequencies the Johnson noise temperature is T∗, independent of the bath temperature for large fields.
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05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
44.30.+v Heat flow in porous media
73.61.At Metal and metallic alloys
72.70.+m Noise processes and phenomena
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