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1 Jun 1983

Volume 42, Issue 11, pp. 919-991

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Passive phase conjugate mirror based on self‐induced oscillation in an optical ring cavity

Mark Cronin‐Golomb, Baruch Fischer, Jeffrey O. White, and Amnon Yariv

Appl. Phys. Lett. 42, 919 (1983); http://dx.doi.org/10.1063/1.93800 (3 pages) | Cited 40 times

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A passive phase conjugate mirror based on four‐wave mixing in an optical ring cavity is described. Unlike previously demonstrated passive phase conjugate mirrors it generates only one of its pumping beams by nonlinear optical interactions, the other being provided by feedback of the probe after transmission through the nonlinear medium. The results of a theory yielding phase conjugate reflectivity and oscillation thresholds are presented together with an experimental demonstration of phase conjugation in barium titanate and strontium barium niobate. The device is self‐starting by four‐wave mixing, and has an oscillation threshold lower than that of other previously demonstrated passive phase conjugate mirrors with similar ease of alignment. The operation of a device which generates nonconjugate oscillation beams is also reported.
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42.65.-k Nonlinear optics
42.40.Kw Holographic interferometry; other holographic techniques
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

New current injection 1.5‐μm wavelength GaxAlyIn1−x−yAs/InP double‐heterostructure laser grown by molecular beam epitaxy

W. T. Tsang and N. A. Olsson

Appl. Phys. Lett. 42, 922 (1983); http://dx.doi.org/10.1063/1.93801 (3 pages) | Cited 13 times

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We have prepared and characterized for the first time a new current injection double‐heterostructure (DH) laser with GaxAlyIn1−x−y As as the active layer and InP as the cladding layers operating at 1.5‐μm wavelength. In this new heterostructure, there is only one group V element involved in every layer. This eases the precise control of lattice matching during molecular beam epitaxial (MBE) growth. At the same time, it eliminates the use of Al0.48In0.52 As, which is of lower quality than InP when grown by MBE, as the cladding layers. Broad‐area Fabry–Perot diodes of 380×200 μm have a threshold current density of ∼3.2 kA/cm2 for active layer thickness of 0.25 μm. In the temperature range ∼15–50 °C, the threshold temperature dependence coefficient T0 is typically ∼40 K. Above ∼50 °C, T0 decreases to ∼25–35 K. The present laser also represents the first current injection DH laser emitting at 1.5 μm ever prepared by MBE. In the present experiment, As2 instead of As4 was also used for the first time in growing the GaxAlyIn1−x−y As layers by MBE in order to improve their quality. This becomes particularly important as the substrate growth temperatures employed are relatively low, ≲625 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Degenerate four‐wave mixing in room‐temperature GaAs/GaAlAs multiple quantum well structures

D. A. B. Miller, D. S. Chemla, D. J. Eilenberger, P. W. Smith, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 42, 925 (1983); http://dx.doi.org/10.1063/1.93802 (3 pages) | Cited 46 times

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We report the first observation of forward degenerate four‐wave mixing (DFWM) in room‐temperature GaAs/GaAlAs multiple quantum well structures near the exciton resonances. In a sample 1.26 μm thick with sixty‐five 96‐Å GaAs quantum wells we observe ∼10−4 diffraction efficiency with ∼30 W/cm2 average intensity from a mode‐locked laser. We measure nonlinear absorption and DFWM spectra, and also a change in refractive index, per carrier pair/cm3, of neh∼2×10−19 cm3 just below the heavy hole exciton peak. With 20‐ns carrier lifetime this corresponds to an effective nonlinear coefficient for cw beams of ‖n2‖≂2×10−4 cm2/W. This is appreciably larger than previous estimates and encouraging for room‐temperature all‐optical devices.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Complete experimental evaluation of the carrier dependence of the refractive index from the frequency modulation spectra of single mode injection lasers

H. S. Sommers

Appl. Phys. Lett. 42, 928 (1983); http://dx.doi.org/10.1063/1.93803 (3 pages) | Cited 4 times

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A new method of evaluating the dependence on carrier density of the propagation constant of the excited mode of a semiconductor laser biased above threshold is applied to a single mode confined double heterostructure‐large optical cavity laser operated at 8‐mW dc. The method combines the measurements of the Fabry–Perot spectrum of the modulated laser, the relative modulation amplitudes of the coherent and short‐wavelength spontaneous powers and the phase difference between the two, and the dependence on dc current of the two emissions. The evaluation is independent of the model of the lasing state, the reduction of the raw data requiring only subthreshold relations between current, voltage, carrier density, and spectrum. The change of the index of refraction of the waveguide mode with the concentration of electron‐hole pairs in the recombination region is +1.8×10−22 cm3. Striking inconsistencies among various published accounts indicate a need for critical examination of all such studies.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
85.30.De Semiconductor-device characterization, design, and modeling

Absolute measurement of optical attenuation

Grover C. Wetsel and Steven A. Stotts

Appl. Phys. Lett. 42, 931 (1983); http://dx.doi.org/10.1063/1.93804 (3 pages) | Cited 5 times

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We have discovered that laser beam deflection spectroscopy can be used for the absolute measurement of wave or particle beam attenuation in condensed matter. The concept has been experimentally evaluated by successfully measuring the absolute optical attenuation in a crystal of U3+:CaF2 at 514 nm. A theoretical model that explains the experiment and characterizes the range of applicability of the method has been developed.
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42.25.Bs Wave propagation, transmission and absorption
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Integrated arrays of 1.3‐μm buried‐crescent lasers

H. Temkin, R. A. Logan, and J. P. van der Ziel

Appl. Phys. Lett. 42, 934 (1983); http://dx.doi.org/10.1063/1.93805 (3 pages) | Cited 4 times

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Arrays of five InGaAsP buried‐cresent large‐optical‐cavity lasers operating at 1.3 μm are described. The monolithically integrated arrays have threshold as low as 60 mA, external quantum efficiencies η≊55%, and operate in the fundamental transverse mode up to 50 mW per facet at room temperature. Despite the very close center to center spacing of 8 μm, no electrical or optical interaction between lasers has been observed.
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42.55.Px Semiconductor lasers; laser diodes

cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW

R. D. Burnham, C. Lindström, T. L. Paoli, D. R. Scifres, W. Streifer, and N. Holonyak

Appl. Phys. Lett. 42, 937 (1983); http://dx.doi.org/10.1063/1.93806 (3 pages) | Cited 13 times

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100‐mW room‐temperature cw laser operation at 7300 Å has been achieved in a Ga1−xAlxAs (x∼0.22), ∼300 Å thick, single quantum well double heterostructure diode grown by organometallic vapor phase epitaxy. The proton‐delineated stripe contact is 6 μm wide, and the front and rear laser facets are coated for antireflection and high reflection respectively. The cw threshold current is 86 mA for a 250‐μm‐long device, and linear output power versus current characteristics are observed up to 100 mW with an external differential quantum efficiency of 1 W/A (59%). cw output power exceeds 13 mW at 100 °C. Between 25–55 °C, the pulsed threshold current varies exponentially with temperature T as exp(T/T0), where T0∼187 K.
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42.55.Px Semiconductor lasers; laser diodes

Surface acoustic wave quasi‐zero‐temperature cuts in Ba2NaNb5O15

Jeannine Hénaff and Michel Feldmann

Appl. Phys. Lett. 42, 940 (1983); http://dx.doi.org/10.1063/1.93799 (3 pages)

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Surface acoustic wave properties of Ba2NaNb5O15 crystals are investigated in terms of electromechanical coupling coefficient k2 and frequency temperature coefficients. A X‐rotated cut and a Y‐rotated cut are selected for their fair coupling. Experimental verifications on a Union Carbide Ba2NaNb5O15 crystal proved excellent agreement for the coupling (1.2%) and markedly better results than computed for the frequency‐temperature coefficient. The best value is measured to be as low as 1.5 ppm/K for 〈101〉 cut, (101) propagation.
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43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Vacuum inductive store/pulse compression experiments on a high power accelerator using plasma opening switches

R. A. Meger, R. J. Commisso, G. Cooperstein, and Shyke A. Goldstein

Appl. Phys. Lett. 42, 943 (1983); http://dx.doi.org/10.1063/1.93807 (3 pages) | Cited 53 times

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The first results of experiments using plasma opening switches for inductive energy storage are described. The switch has been shown to conduct up to 200‐kA current for ∼50 ns then to open in <10 ns, transferring the current to an electron beam load. Inductive energy storage, pulse compression, and power multiplication are demonstrated. A simple model explaining the switch operation is presented.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.75.Di Ion and plasma propulsion
52.80.Vp Discharge in vacuum

Time and space resolved vacuum‐ultraviolet spectroscopy of an argon gas‐puff Z pinch

R. E. Marrs, D. D. Dietrich, R. J. Fortner, M. A. Levine, D. F. Price, R. E. Stewart, and B. K. F. Young

Appl. Phys. Lett. 42, 946 (1983); http://dx.doi.org/10.1063/1.93808 (3 pages) | Cited 13 times

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Time and radially resolved vacuum‐ultraviolet spectra from an argon gas‐puff Z pinch have been obtained using a grazing incidence spectrometer with gated microchannel plates curved to the Rowland circle. Most of the 50–300‐Å radiation is emitted from a dense core (r≊0.4 mm, ne≳1019 cm−3, Te≊150 eV) which forms when the plasma assembles on the axis.
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52.50.Dg Plasma sources
32.30.Rj X-ray spectra
52.55.Ez Theta pinch
07.60.Rd Visible and ultraviolet spectrometers

Drift velocity measurements in relativistic electron beams

P. Avivi, Ch. Cohen, and L. Friedland

Appl. Phys. Lett. 42, 948 (1983); http://dx.doi.org/10.1063/1.93809 (2 pages) | Cited 12 times

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A novel experimental method to measure the average drift velocity of relativistic electron beams is presented. The method is based on simultaneous measurements of the beam current and the radial electrostatic potential induced by the space charge of the beam. The method was applied to analyze the beam at different diode voltages and guide fields. The average drift velocity was found to be always considerably less than that corresponding to the diode voltage.
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41.75.Fr Electron and positron beams

Surface and interface nitridation of thin polycrystalline silicon films

F. H. P. M. Habraken, A. E. T. Kuiper, and Y. Tamminga

Appl. Phys. Lett. 42, 950 (1983); http://dx.doi.org/10.1063/1.93810 (3 pages)

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Polycrystalline silicon thin films (about 800 Å thick) on silicon dioxide, annealed in ammonia at 1160 °C for various times, have been analyzed using Auger electron spectroscopy in combination with argon ion sputtering and Rutherford backscattering spectrometry. Nitridation results in the growth of surface nitride layers of the same thickness as on monocrystalline silicon. However, nitridation times longer than 30 min give rise to an additional (oxy)nitride formation at the polysilicon/silicon dioxide interface. The degree of coverage of the grain boundary surface by nitrogen is estimated to be well below monolayer level.
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68.55.-a Thin film structure and morphology
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Thermal and pulsed laser evaporation of single phase AsxP1−x alloys

G. P. Schwartz, V. E. Bondybey, J. H. English, and G. J. Gualtieri

Appl. Phys. Lett. 42, 952 (1983); http://dx.doi.org/10.1063/1.93811 (3 pages) | Cited 15 times

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The atomic and molecular species evolved during thermal and pulsed laser evaporation of single phase AsxP1−x alloys have been examined using mass spectroscopy. Thermal evaporation yields tetratomic molecules of the form As4−nPn (n=0, 1, 2, 3, 4) as well as diatomic As2, P2, and AsP. Pulsed laser vaporization using a Q‐switched train of 1.06‐μ neodymium: yttrium aluminum garnet (Nd:YAG) pulses primarily evolves atomic As and P species, some fraction of which are ionized. The generation of atomic beams containing one or more of the group V elements from a homogeneous source of controllable stoichiometry has some potential applications for the growth of optoelectronic thin films.
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05.70.-a Thermodynamics
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.55.-a Thin film structure and morphology
79.20.Ds Laser-beam impact phenomena

Photoacoustic determination of thin‐film thermal properties

Randall T. Swimm

Appl. Phys. Lett. 42, 955 (1983); http://dx.doi.org/10.1063/1.93812 (3 pages) | Cited 48 times

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Photoacoustic measurements of the thermal diffusivity and thermal conductivity of a thin‐film optical coating are described. The figures of merit characterizing the thin‐film/substrate system studied are as follows: ratio of substrate to thin‐film effusivity g=5.0%±10%, critical frequency (equal to thin‐film thermal diffusivity divided by the square of the thin‐film thickness) fc=98 kHz±3%. Measured values of thin‐film thermal diffusivity and thermal conductivity are comparable to tabulated bulk values. The ability to directly measure thin‐film thermal properties may be particularly valuable in investigating laser damage of optical coatings.
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05.70.Ce Thermodynamic functions and equations of state
68.60.-p Physical properties of thin films, nonelectronic
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
44.30.+v Heat flow in porous media

Determination of diffusion length of electron beam induced minority carriers in polycrystalline GaAs

O. Paz and J. M. Borrego

Appl. Phys. Lett. 42, 958 (1983); http://dx.doi.org/10.1063/1.93813 (3 pages) | Cited 5 times

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A method of combining Schottky barrier electron beam induced current imaging of grain clusters with quantitative determination of diffusion length is demonstrated. This was achieved by comparing the measured number of collected carriers per incident electron, corrected for backscattered, and secondary electrons to a calculated value. A source function compensated for metal thickness was used. Diffusion lengths were measured in GaAs samples and ranged from 0.2 μm for polycrystalline and bulk single crystal material to 7.5 μm for chemical vapor deposition grown layers. These values were independently verified through a comparison with quantum efficiency data.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Kinetics of self‐interstitials generated at the Si/SiO2 interface

K. Taniguchi, D. A. Antoniadis, and Y. Matsushita

Appl. Phys. Lett. 42, 961 (1983); http://dx.doi.org/10.1063/1.93814 (3 pages) | Cited 64 times

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The kinetics of self‐interstitials in silicon were investigated by monitoring oxidation stacking faults on backside oxidized silicon wafers in the temperature range 1100–1200 °C in a wet O2 ambient. The diffusion coefficient and thermal equilibrium concentration of self‐interstitials were obtained by optimizing model parameters to match calculated and experimental observations of growth of oxidation stacking faults at the front surface of silicon wafers protected from oxidation by a composite SiO2/poly Si/Si3N4 film.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.Nn Stacking faults and other planar or extended defects

Pd/a‐Si:H metal‐insulator‐semiconductor Schottky barrier diode for hydrogen detection

A. D’Amico, G. Fortunato, G. Petrocco, and C. Coluzza

Appl. Phys. Lett. 42, 964 (1983); http://dx.doi.org/10.1063/1.93815 (2 pages) | Cited 7 times

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Hydrogenated amorphous silicon (a‐Si:H), produced by the glow‐discharge technique, has been used to construct very low cost, high quality metal‐insulator‐semiconductor structures where palladium has been utilized as catalytic metal for hydrogen detection. With this device, hydrogen concentration in hydrogen‐nitrogen mixture as low as 100 ppm has been detected. There is indication that the ultimate limit is much lower.
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72.80.Ng Disordered solids
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

High‐performance K‐band GaAs power field‐effect transistors prepared by molecular beam epitaxy

P. Saunier and H. D. Shih

Appl. Phys. Lett. 42, 966 (1983); http://dx.doi.org/10.1063/1.93816 (3 pages)

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The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K‐band GaAs power field‐effect transistors (FET’s) fabricated on the MBE wafers. An output power of 710 mW with 4.5‐dB gain and 17.7% power‐added efficiency was achieved at 21 GHz with a 1.26‐mm gate width π‐gate device. A similar device with a 0.56‐mm gate width produced an output power of 320 mW with 5.0‐dB gain and 26.6% power‐added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FET’s operated in the K‐band frequency range.
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85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology

Optically enhanced amorphous silicon solar cells

H. W. Deckman, C. R. Wronski, H. Witzke, and E. Yablonovitch

Appl. Phys. Lett. 42, 968 (1983); http://dx.doi.org/10.1063/1.93817 (3 pages) | Cited 61 times

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We describe the first application of optical enhancement to thin‐film (∼0.75 μm thick) amorphous silicon solar cells and define cell geometries which maximize enhancement effects. We observed that due to the improved infrared absorption the external AM1 short circuit current increases by 3.0 mA/cm2 in cells constructed in accordance with the principles of optical enhancement.
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84.60.Jt Photoelectric conversion

High resistivity in p‐type InP by deuteron bombardment

M. W. Focht and B. Schwartz

Appl. Phys. Lett. 42, 970 (1983); http://dx.doi.org/10.1063/1.93818 (3 pages) | Cited 14 times

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High resistivity layers have been achieved in p‐type InP using deuteron bombardment. A curve of average resistivity versus bombardment dose has been determined for p‐type InP with an initial background carrier concentration of 1×1018 cm−3. It has been shown that average resistivities of 109 Ω cm or higher can be attained reproducibly, over a dose range 3×1013–1×1014 deuterons/cm2.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
73.40.Rw Metal-insulator-metal structures
72.80.Ey III-V and II-VI semiconductors

Fabrication of GaAs‐Mo‐Si structures by metalorganic chemical vapor deposition and laser annealing

K. Okamoto and T. Imai

Appl. Phys. Lett. 42, 972 (1983); http://dx.doi.org/10.1063/1.93819 (3 pages) | Cited 4 times

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Undoped‐polycrystalline GaAs layers were deposited on Mo layers by metalorganic chemical vapor deposition and annealed by pulse laser irradiation. The laser used here was a Q‐switched ruby laser and the annealing was done by immersing the samples in SnCl2‐dissolved methanol. Then, recrystallization and doping of the GaAs layers were successfully done. The Schottky characteristics were observed between the top GaAs layer and the Mo layer underneath; the barrier height was 0.53 eV.
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68.55.-a Thin film structure and morphology
73.40.Vz Semiconductor-metal-semiconductor structures

Picosecond CdSe photodetector

W. Margulis and W. Sibbett

Appl. Phys. Lett. 42, 975 (1983); http://dx.doi.org/10.1063/1.93820 (3 pages) | Cited 4 times

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The performance of a photoconductive device in which an evaporated CdSe film is used as the semiconductor medium is described. The results indicate an ultrafast response and a recovery time ∼20 ps.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors

Optical transmission at 3.39 μm during pulsed laser annealing of silicon

S. A. Lyon, Y. H. Chen, J. F. Lin, and J. M. Worlock

Appl. Phys. Lett. 42, 978 (1983); http://dx.doi.org/10.1063/1.93821 (3 pages) | Cited 4 times

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We have measured the infrared transmission at 3.39 μm, for bulk Si and Si:Au and for silicon on sapphire during pulsed laser annealing. The transmission drops sharply and remains near zero for approximately 100 ns in all samples. The infrared transmission in bulk Si requires milliseconds to completely recover. We attribute this effect to a thermally induced change in the index of refraction of the silicon and associated tuning of the Fabry–Perot cavity formed by the faces of the Si wafers. Our experiments yield no evidence for an optical gap as expected for a Bose condensed exciton phase, and thus are supportive of the thermal melting model of laser annealing.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopy

N. M. Johnson

Appl. Phys. Lett. 42, 981 (1983); http://dx.doi.org/10.1063/1.93822 (3 pages) | Cited 20 times

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Electronic defect levels in amorphous silicon Schottky diodes have been measured by capacitance transient spectroscopy performed in the constant capacitance mode. In hydrogenated amorphous silicon deep levels are continuously distributed in energy and of sufficient density to dominate the electrical properties. The constant capacitance mode, applied for the first time to an amorphous semiconductor, offers significant advantages over the transient capacitance mode for measuring the bulk density of gap states. For example, numerical solution of Poisson’s equation for only the steady‐state charge distribution is required to analyze the transient response of a diode after a trap‐filling voltage pulse. The technique has been used to record time‐resolved transients, which saturate with respect to pulse width, and the analysis yields deep level distributions in the range of 1017 eV−1 cm−3 over the energy interval from 0.6 to 0.9 eV below the conduction‐band mobility edge.
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71.23.-k Electronic structure of disordered solids

Infrared optical constants of PtSi

J. M. Pimbley and W. Katz

Appl. Phys. Lett. 42, 984 (1983); http://dx.doi.org/10.1063/1.93823 (3 pages) | Cited 15 times

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Knowledge of the infrared optical constants of PtSi is required for quantum yield calculations of Schottky barrier IR imagers with PtSi electrodes. We employ Rutherford backscattering spectrometry to identify the PtSi phase and calculate the infrared optical constants from reflectance data by a Kramers–Kronig analysis technique. Several examples of quantum yield calculations for different imager structures using the calculated optical constants are given.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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