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15 Jun 1983

Volume 42, Issue 12, pp. 997-1052


UV laser photopolymerization of volatile surface‐adsorbed methyl methacrylate

J. Y. Tsao and D. J. Ehrlich

Appl. Phys. Lett. 42, 997 (1983); http://dx.doi.org/10.1063/1.93840 (3 pages) | Cited 13 times

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The localized UV laser photopolymerization of surface‐adsorbed methyl methacrylate has been used to deposit poly(methyl methacrylate) films for direct patterning of wet and dry chemical etching processes. Using this negative resist process, submicrometer linewidths both in the polymer deposition and in pattern transfer into Si and SiO2 have been demonstrated. The chemical kinetics of simple and catalyzed photopolymerization have been studied by dynamic lensing experiments and modeled as a dynamic equilibrium between competing surface photoreactions.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.-m Photochemistry
79.20.Ds Laser-beam impact phenomena
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Direct measurement of the carrier leakage in an InGaAsP/InP laser

T. R. Chen, S. Margalit, U. Koren, K. L. Yu, L. C. Chiu, A. Hasson, and A. Yariv

Appl. Phys. Lett. 42, 1000 (1983); http://dx.doi.org/10.1063/1.93841 (3 pages) | Cited 19 times

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Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser‐bipolar‐transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions.
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42.55.Px Semiconductor lasers; laser diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Transient single‐longitudinal mode stabilization in double active layer GaInAsP/InP laser under high‐bit rate modulation

W. T. Tsang, N. A. Olsson, and R. A. Logan

Appl. Phys. Lett. 42, 1003 (1983); http://dx.doi.org/10.1063/1.93842 (3 pages) | Cited 6 times

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We propose and demonstrate the operation of a new 1.3‐μm wavelength GaInAsP semiconductor laser: the double active layer (DAL) crescent laser and compared its device performances with regular single active layer (SAL) crescent laser fabricated under similar procedures. While the regular SAL crescent lasers (∼250 μm cavity) tested were in general multilongitudinal moded, the DAL crescent lasers (both 300 and 125 μm) were highly single‐longitudinal moded for the entire current range tested (up to 3Ith), even under transient fast pulse excitation (high‐bit rate modulation) and showed stability to mode hopping. DAL crescent lasers with short cavity (∼125 μm) operated stably in the same single‐longitudinal mode under fast constant current pulse excitation at all time starting from the onset of optical pulse and approach the characteristics of distributed Bragg reflector lasers in spectral purity and stability.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Optimization of electrically excited XeF(C→A) laser performance

W. L. Nighan, Y. Nachshon, F. K. Tittel, and W. L. Wilson

Appl. Phys. Lett. 42, 1006 (1983); http://dx.doi.org/10.1063/1.93843 (3 pages) | Cited 9 times

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Significantly improved output power and spectral characteristics have been obtained for an electron beam‐pumped XeF(C→A) laser by selective tailoring of kinetic processes. Using a high pressure Ar‐Xe mixture containing both NF3 and F2 in combination, a laser pulse energy density of 0.1 J/l was obtained corresponding to an electrical‐optical conversion efficiency of approximately 0.1%. Modeling of kinetic processes and analysis of laser spectral output confirm that the improved laser efficiency is primarily a consequence of reduced absorption by Xe‐related excited species.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

High‐pressure high‐current transversely excited Sr+ recombination laser

M. S. Butler and J. A. Piper

Appl. Phys. Lett. 42, 1008 (1983); http://dx.doi.org/10.1063/1.93844 (3 pages) | Cited 8 times

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Operation of a transversely excited Sr+ recombination laser at buffer gas (He) pressures up to 1300 Torr and discharge current densities up to 103 A/cm2 is reported. Specific energy densities on the λ430.5‐nm Sr+ line exceed 50 μJ/cm3 for the 30‐cm3 active volume device with no fundamental limitations observed. Double‐pulse experiments indicate pulse repetition frequencies near 1 MHz may be possible.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Stimulated bremsstrahlung masers

A. J. Palmer

Appl. Phys. Lett. 42, 1011 (1983); http://dx.doi.org/10.1063/1.93845 (2 pages) | Cited 4 times

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Interferometer measurements of the dielectric constant of the cathode‐region plasma of a helium glow discharge yield a null result for the stimulated bremsstrahlung gain coefficient for 75–95‐GHz radiation in contradiction to recently reported single‐pass gain measurements. Physical arguments supportive of the results are presented.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

Picosecond optical pulse generation by impulse train current modulation of a semiconductor laser

R. A. Elliott, Huang DeXiu, R. K. DeFreez, J. M. Hunt, and P. G. Rickman

Appl. Phys. Lett. 42, 1012 (1983); http://dx.doi.org/10.1063/1.93846 (3 pages) | Cited 12 times

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Optical pulses of less than 10‐ps duration have been generated by driving a GaAlAs laser with a train of 80‐ps full width at half‐maximum current impulses and a 20‐ns pulsed square wave bias.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Integrated surface acoustic wave/field‐effect transistor high‐speed analog memory

J. B. Green, G. S. Kino, J. T. Walker, and J. D. Shott

Appl. Phys. Lett. 42, 1015 (1983); http://dx.doi.org/10.1063/1.93847 (3 pages)

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A totally monolithic buffer memory has been demonstrated whose operation is governed by the interaction between surface acoustic waves and an integrated multiplexed field‐effect transistor array. The device is based on ZnO on Si surface acoustic wave technology with the field‐effect transistor array being fabricated using a standard negative metal‐oxide‐semiconductor processing schedule. Experimental results are presented which show the low‐speed readout of rf modulated waveforms (f0≊100 MHz), previously stored in the device.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Tv Field effect devices

Thermoelastic hologram for focused ultrasound

R. J. von Gutfeld, D. R. Vigliotti, C. S. Ih, and W. R. Scott

Appl. Phys. Lett. 42, 1018 (1983); http://dx.doi.org/10.1063/1.93826 (3 pages) | Cited 6 times

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An acoustic holographic lens structure is described for generating thermoelastic waves from the energy of absorbed laser excitation. The structure uses a large area optically absorbing surface to permit the megahertz ultrasound to be focused for nondestructive evaluation applications. Experimental results for the spatial distribution of 10‐MHz ultrasonic waves obtained from the hologram are presented.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.38.+n Transduction; acoustical devices for the generation and reproduction of sound
43.60.+d Acoustic signal processing

Solid phase epitaxial regrowth of amorphous silicon on molecular beam epitaxial silicon/Si layers

A. Christou, B. R. Wilkins, and J. E. Davey

Appl. Phys. Lett. 42, 1021 (1983); http://dx.doi.org/10.1063/1.93827 (3 pages) | Cited 4 times

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The recrystallization and epitaxial regrowth of amorphous silicon layers on molecular beam epitaxial (MBE) silicon at 650 °C is described. MBE silicon layers were deposited at 650 °C followed by deposition of amorphous layers at 100–400 °C. Subsequent solid phase epitaxial regrowth of these layers has been achieved at 650 °C.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Solid phase diffusivity effect on nonequilibrium dopant segregation

Salvatore Ugo Campisano and Pietro Baeri

Appl. Phys. Lett. 42, 1023 (1983); http://dx.doi.org/10.1063/1.93828 (3 pages) | Cited 4 times

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The profile distribution and lattice location of Zn atoms after laser irradiation of ion implanted Si and Ge substrates have been determined by ion beam analysis techniques. In Si the implanted Zn is completely zone refined to the surface whilst in Ge considerable trapping and supersaturation are obtained. Zn is a fast interstitial diffuser in Si and a slow substitutional diffuser in Ge. This result confirms the kinetic trapping model in which the solid phase diffusivity of the considered dopant plays an important role in determining the velocity at which the interfacial segregation coefficient deviates from the equilibrium value.
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61.72.jn Color centers
64.75.-g Phase equilibria
81.30.Fb Solidification

Crystal growth in amorphous silicon thin films induced by incoherent light flashes

B. Y. Tong, K. Ebihara, P. K. John, S. K. Wong, and K. P. Chik

Appl. Phys. Lett. 42, 1026 (1983); http://dx.doi.org/10.1063/1.93829 (3 pages) | Cited 1 time

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Amorphous silicon thin films on glass substrates were crystallized by a 4‐μs light pulse from a plasma arc. Explosive crystal growth from nucleation centers was observed at 4.6 J/cm2. Large silver‐shaped streaks (0.7 mm×50 μm) were produced. Conductivity changed by six orders of magnitude and the flashed samples gave high photoconductivity. Growth patterns were different near the threshold value of 3.1 J/cm2.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
85.30.Kk Junction diodes
72.40.+w Photoconduction and photovoltaic effects

High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane

Yutaka Ohashi, Jean Kenne, Makoto Konagai, and Kiyoshi Takahashi

Appl. Phys. Lett. 42, 1028 (1983); http://dx.doi.org/10.1063/1.93830 (3 pages) | Cited 5 times

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The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si2H6) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 Å/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial of n‐i‐p type solar cells deposited on SnO2/ITO glass and metal substrates, respectively.
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84.60.Jt Photoelectric conversion
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Degradation of 1.3‐μm InP/InGaAsP light‐emitting diodes with misfit dislocations

A. K. Chin, C. L. Zipfel, B. H. Chin, and M. A. DiGiuseppe

Appl. Phys. Lett. 42, 1031 (1983); http://dx.doi.org/10.1063/1.93831 (3 pages) | Cited 8 times

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The degradation of 1.3‐μm InP/InGaAsP light‐emitting diodes (LED’s) with misfit dislocations was investigated. Initially, the misfit dislocations were found to be present only in the p‐InP confining layer and they thus showed weak (∼1%) contrast in the electroluminescence (EL) image of the light‐emitting region. Without bias, no degradation of the LED’s was measured after 103 h at 200 °C. After 103 h at 20 °C and 8 kA/cm2, a previous study found that InP/InGaAsP LED’s containing misfit dislocations did not degrade. However, our study showed that the lifetime of the LED’s varied inversely with the third power of the current density. In the degraded LED’s, the misfit dislocations showed stronger (∼50%) contrast in the EL image, suggesting that they played a significant role in the device degradation. In these devices, misfit dislocations were found not only in the p‐InP confining layer but also in the light‐emitting region of the active layer. The degradation of InP/InGaAsP LED’s with misfit dislocations is thus consistent with the mechanism of nonradiative recombination enhanced growth of the misfit dislocations into the active layer. For our device structure, wafers with Δa/a≲0.05% lattice mismatch are free of misfit dislocations and thus ensure reliable device operation at high current densities.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
85.60.Jb Light-emitting devices

Bifurcation of deep levels in metastable (GaAs)1−xGe2x alloys

Kathie E. Newman and John D. Dow

Appl. Phys. Lett. 42, 1033 (1983); http://dx.doi.org/10.1063/1.93832 (3 pages)

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Deep impurity levels in metastable (GaAs)1−xGe2x alloys are predicted to bifurcate as functions of x at the alloy order‐disorder transition composition.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
61.66.Dk Alloys
64.60.Cn Order-disorder transformations

Photoelectrocatalysis on silicon in solar light

Marek Szklarczyk and John O’M. Bockris

Appl. Phys. Lett. 42, 1035 (1983); http://dx.doi.org/10.1063/1.93833 (2 pages) | Cited 9 times

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Photoelectrochemical measurements have been carried out on p‐Si electrodes which contained islands of Pb, Cd, Au, Ni, Co, and Pt. These islands cause the photocurrent density of some of the Si systems to increase greatly (10×) in the middle region of the photocurrent potential curve. A plot of the change in potential observed for this region against log i0 for the dark hydrogen evolution on the metals concerned is linear with a slope close to that expected for a rate determining step at the metal‐solution interface.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Mr Semiconductor-electrolyte contacts
82.45.-h Electrochemistry and electrophoresis

Silicon molecular beam epitaxy on gallium phosphide

T. de Jong, W. A. S. Douma, J. F. van der Veen, F. W. Saris, and J. Haisma

Appl. Phys. Lett. 42, 1037 (1983); http://dx.doi.org/10.1063/1.93834 (3 pages) | Cited 14 times

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Si overlayers have been grown under ultrahigh vacuum conditions on GaP(100) single crystals by means of molecular beam epitaxy. For growth temperatures of 300 °C and higher (2×1) low‐energy electron diffraction patterns of the Si overlayers were seen at all overlayer thicknesses produced (8–10 000 Å). By means of Auger electron spectroscopy segregation of P and Ga on top of the grown Si surface was measured. With Rutherford backscattering using ion channeling we found Si minimum channeling yields of 3% in the GaP:Si(100) heterostructures, which corresponds well to the yield of pure monocrystalline (100) Si. Two methods are described to eliminate the Ga and P segregation.
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68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ultrahigh speed modulation‐doped heterostructure field‐effect photodetectors

C. Y. Chen, A. Y. Cho, C. G. Bethea, P. A. Garbinski, Y. M. Pang, B. F. Levine, and K. Ogawa

Appl. Phys. Lett. 42, 1040 (1983); http://dx.doi.org/10.1063/1.93835 (3 pages) | Cited 14 times

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We have developed a sensitive, ultrahigh speed photodetector which has a structure of a modulation‐doped AlxGa1−xAs/GaAs field‐effect transistor. In spite of a large gate‐drain spacing of >8 μm and a gate length of >20 μm, this detector exhibited a rise time of 12 ps and a full width at half‐maximum of 27 ps. When tested by a 8200‐Å GaAs injection laser, the detector showed an ac (>20 MHz) external quantum efficiency of >630%, i.e., 9 times more sensitive than a pin photodiode. In view of its high sensitivity, ultrahigh speed, and compatibility with modulation‐doped field‐effect transistors, this detector has promise for a variety of high‐speed optical applications.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Diffusion of arsenic in silicon: Validity of the percolation model

D. Mathiot and J. C. Pfister

Appl. Phys. Lett. 42, 1043 (1983); http://dx.doi.org/10.1063/1.93836 (2 pages) | Cited 20 times

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It is shown that the percolation model previously proposed to explain the high concentration diffusion of phosphorus in Si holds also in the case of arsenic. Suitable numerical values of the parameters are derived, and it is shown that the model allows the simulation of arsenic diffusion in a wide range of experimental conditions.
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66.30.J- Diffusion of impurities

Shot noise effect on the nonzero voltage state of the hysteretic Josephson junction

E. Ben‐Jacob, D. J. Bergman, Y. Imry, B. J. Matkowsky, and Z. Schuss

Appl. Phys. Lett. 42, 1045 (1983); http://dx.doi.org/10.1063/1.93837 (3 pages) | Cited 6 times

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We consider the combined effect of shot and thermal noise on (i) the stationary distribution of fluctuations about the nonzero voltage state of an underdamped hysteretic Josephson junction, and (ii) the noise induced transition rate from the nonzero voltage to the zero voltage state. We find that the distribution is nonsymmetric in that the positive voltage fluctuations are more probable than the negative ones. We also find that the transition rates are larger than those due to thermal noise alone.
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74.50.+r Tunneling phenomena; Josephson effects
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

Performance characteristics of a low‐flow rate 25 mW, LN2 Joule–Thomson refrigerator fabricated by photolithographic means

S. Garvey, S. Logan, R. Rowe, and W. A. Little

Appl. Phys. Lett. 42, 1048 (1983); http://dx.doi.org/10.1063/1.93838 (3 pages) | Cited 9 times

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Using a photolithographic fabrication process microminiature Joule–Thomson refrigerators have been fabricated substantially smaller in size than hitherto and with refrigeration capacities of the order of 25 mW. The devices are 0.5×2×15 mm in size, they operate on nitrogen gas and cool to 88 K in 45 s. The fabrication process allows mass production of the devices at low cost. It was found that the theoretical models used for the design of the refrigerators are adequate at this level of miniaturization.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.60.Gz Photodetectors (including infrared and CCD detectors)

High‐speed x‐ray sensitive photoconducting detector

D. H. Auston, R. R. Freeman, P. R. Smith, D. M. Mills, and R. H. Siemann

Appl. Phys. Lett. 42, 1050 (1983); http://dx.doi.org/10.1063/1.93839 (3 pages) | Cited 4 times

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A novel photoconducting detector for time‐resolved measurements in the x‐ray region of the spectrum has been constructed. Time resolution of better than 40 ps at energies between 3 and 10 keV has been demonstrated in bunch length measurements on the Cornell Electron Storage Ring. At high beam currents, dramatic instabilities and a breakup of the electron bunch were directly observed with this detector.
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85.30.De Semiconductor-device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects
29.40.Wk Solid-state detectors
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