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1 Jan 1983

Volume 42, Issue 1, pp. 1-125

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Growth of high‐purity GaAs layers by molecular beam epitaxy

J. C. M. Hwang, H. Temkin, T. M. Brennan, and R. E. Frahm

Appl. Phys. Lett. 42, 66 (1983); http://dx.doi.org/10.1063/1.93727 (3 pages) | Cited 22 times

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High‐purity GaAs layers were grown by molecular beam epitaxy using carefully controlled procedures for source and substrate preparation as well as the growth itself. The layers grown without intentional doping were semi‐insulating with resistivities consistently greater than 106 Ω cm. The layers doped with Si in the 1014 cm−3 range gave record Hall mobilities, the highest value being 140 000 cm2/Vs at 55 K with a net charge carrier concentration of 1×1014 cm−3. The results suggest that the use of prolonged growth period or AsH3 source is not a necessary condition for high‐purity growth.
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68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Tv Field effect devices

Solid‐phase reactions of a polycrystalline silicon film with an overlapping aluminum film

Yukio Fukuda and Shigeto Kohda

Appl. Phys. Lett. 42, 68 (1983); http://dx.doi.org/10.1063/1.93728 (3 pages) | Cited 5 times

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Reactions betwen aluminum and polycrystalline silicon films below the eutectic temperature have been studied for a structure in which the aluminum film overlaps the polycrystalline silicon film on the SiO2 layer. The polycrystalline silicon in the overlapping location was found to be intensively dissolved into the aluminum film in comparison with the polycrystalline silicon with the aluminum film overlay. The aluminum substitution reaction for the polycrystalline silicon film was also found. The activation energy of the substitution reaction was about 1.0 eV, estimated from the dependence of the substituted aluminum length on the annealing temperature.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
66.30.-h Diffusion in solids
73.40.Ns Metal-nonmetal contacts

Auger and electron energy‐loss study of the Al/SiC interface

Victor M. Bermudez

Appl. Phys. Lett. 42, 70 (1983); http://dx.doi.org/10.1063/1.93730 (3 pages) | Cited 54 times

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Auger and electron energy‐loss spectroscopies, as functions of Al coverage and annealing temperature, have been used to determine the mechanism of formation of the Al/SiC interface. Al deposited at room temperature forms quasi‐metallic islands randomly distributed over the surface. Annealing at moderate temperature (≤600 °C) causes aggregation of Al at C‐rich sites. At higher temperature, Al reacts with C (but not with Si) to form Al4C3.
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68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.20.Fv Electron impact: Auger emission

Diffusivity of oxygen in silicon at the donor formation temperature

M. Stavola, J. R. Patel, L. C. Kimerling, and P. E. Freeland

Appl. Phys. Lett. 42, 73 (1983); http://dx.doi.org/10.1063/1.93731 (3 pages) | Cited 144 times

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We present data on oxygen diffusivity in silicon for the temperature range 270–400 °C. The diffusivity is determined from the recovery kinetics of a stress induced dichroism in the 9‐μm oxygen infrared absorption band. We combine our data for well dispersed oxygen (i.e., crystals heat treated at 1350 °C for 20 h), with Mikkelsen’s recent mass transport work at higher temperature to obtain the diffusivity, D=0.17 exp (−2.54/kT), for the range 330–1240 °C. We have also found that the oxygen atomic hopping times can be as much as 100 times faster in crystals that have not received the 1350 °C heat treatment.
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66.30.J- Diffusion of impurities

Monte Carlo simulation of impact ionization in GaAs including quantum effects

Yia‐Chung Chang, D. Z. ‐Y. Ting, J. Y. Tang, and K. Hess

Appl. Phys. Lett. 42, 76 (1983); http://dx.doi.org/10.1063/1.93732 (3 pages) | Cited 57 times

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We present a theory of steady‐state impact ionization in GaAs including a realistic band structure and the electron‐phonon interaction using a field‐theoretic scheme that goes beyond first order processes. The theory explains most known experimental high‐field transport data for GaAs satisfactorily, except for the anisotropy of the impact ionization rate measured by Pearsall. It is concluded that this anisotropy is not connected to quantum effects influencing the scattering rate and is probably caused by transient phenomena at the metallurgical junction of the samples used for investigating the anisotropy of the ionization rate.
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79.20.Kz Other electron-impact emission phenomena
72.20.Ht High-field and nonlinear effects

Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon

Shuji Komuro, Yoshinobu Aoyagi, Yusaburo Segawa, Susumu Namba, Akio Masuyama, Hiroaki Okamoto, and Yoshihiro Hamakawa

Appl. Phys. Lett. 42, 79 (1983); http://dx.doi.org/10.1063/1.93733 (3 pages) | Cited 21 times

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See Also: Erratum

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We have found that a picosecond time relaxation of photoexcited carriers appears after an optical illumination in glow discharge hydrogenated amorphous silicon. The origin of this rapid relaxation is qualitatively explained by the relaxation of excited carriers to increased shallow localized states after the optical illumination. The experimental results have been analyzed by a multiple trapping mechanism taking into account shallow and deep localized states.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ng Disordered solids
42.60.-v Laser optical systems: design and operation
84.60.Jt Photoelectric conversion

Low‐temperature silicon crystal growth on an amorphous planar substrate

Hidefumi Mori

Appl. Phys. Lett. 42, 81 (1983); http://dx.doi.org/10.1063/1.93734 (3 pages) | Cited 5 times

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Silicon single crystal film having an area of aobut 130×130 μm2 was grown on an amorphous planar substrate. Crystal growth was performed by silicon evaporation on the substrate, which was covered by gold film and maintained at 380 °C. The gold film, which is shaped in a periodic rhomboidal pattern, controls the crystallographic orientation. Transmission electron microscope/diffraction observation showed that the 〈111〉 axis was normal to the substrate, and the 〈110〉 axis was normal to a side of the gold rhomboid pattern.
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68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source

J. R. Shealy, V. G. Kreismanis, D. K. Wagner, and J. M. Woodall

Appl. Phys. Lett. 42, 83 (1983); http://dx.doi.org/10.1063/1.93735 (3 pages) | Cited 23 times

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Using an aluminum‐gallium‐indium ternary melt for the removal of oxygen and moisture from the arsine source, substantial improvement in the quality of organometallic vapor phase epitaxial AlGaAs can be achieved. The arsine is bubbled through the ternary melt at room temperature prior to its introduction into a low‐pressure reactor. Low‐temperature photoluminescence spectra indicate an improvement in the sharpness of the bound exciton transition after the use of this gettering technique.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Hx Other solid inorganic materials

Surface chemical reactions on In0.53Ga0.47As

H. J. Stocker and D. E. Aspnes

Appl. Phys. Lett. 42, 85 (1983); http://dx.doi.org/10.1063/1.93736 (3 pages) | Cited 12 times

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Dark currents on In0.53Ga0.47As mesa photodiodes can be reduced significantly by treating the surfaces with H2SO4:H2O2:XH2O (10≤X≤500) instead of the usual bromine‐methanol etch. Using spectroscopic ellipsometry we show that peroxide etches form porous amorphous As or oxide overlayers according to whether the pH values are less than or greater than ∼3. The identity of these overlayers is established by their dielectric response and chemical reactivity.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Investigation of Sn‐doped GaAs epilayers grown by low pressure metal‐organic chemical vapor deposition

M. K. Lee, C. Y. Chang, and Y. K. Su

Appl. Phys. Lett. 42, 88 (1983); http://dx.doi.org/10.1063/1.93737 (2 pages) | Cited 9 times

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Tetraethyltin was used as a source of Sn dopant in homoepitaxial GaAs films grown from triethylgallium and arsine by low pressure metal‐organic chemical vapor deposition. Epitaxial crystallinity was examined by using the x‐ray back reflection Laue method. The carrier concentration is uniform in the Sn‐doped epilayers and the transition region can be controlled to within 0.2 μm. The current‐voltage characteristics were also examined. The accumulation of Sn on the surface of the epilayer was observed by Auger electron spectroscopy.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Nucleation and growth rate of a‐Si alloys

Jesus Gonzalez‐Hernandez and Raphael Tsu

Appl. Phys. Lett. 42, 90 (1983); http://dx.doi.org/10.1063/1.93738 (3 pages) | Cited 42 times

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From fitting the crystallization rate to an Arrhenius rate expression with a single activation energy we found that it is possible to distinguish a purely amorphous silicon sample from one having trace crystallinity. Whenever microcrystallites are present whether from heavy P doping or heat treatment, the ‘‘activation energy’’ is approximately 1 eV, whereas purely amorphous silicon has an activation energy of 3–4 eV. In other words, the exponent on time in the Avrami expression is different for the nucleation and growth processes.
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61.43.Fs Glasses
61.43.-j Disordered solids
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

New graded band‐gap picosecond phototransistor

F. Capasso, W. T. Tsang, C. G. Bethea, A. L. Hutchinson, and B. F. Levine

Appl. Phys. Lett. 42, 93 (1983); http://dx.doi.org/10.1063/1.93739 (3 pages) | Cited 17 times

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We demonstrate the first phototransistor with a graded band‐gap base. The AlGaAs/GaAs wide gap emitter molecular beam epitaxial structure, when operated at zero bias, behaves as an ultrahigh speed photodetector. The pulse response is symmetric with an intrinsic rise time ≤20 ps and a full width at half‐maximum ≤40 ps. When operated at reverse bias the detector behaves as a phototransistor. The response time of this device demonstrates that the base transit time is greatly reduced by the quasi‐electric field in the base. This feature combined with the abrupt wide gap emitter may be used to implement new high‐speed transistors.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Dispersion of the saturated current in GaAs from dc to 1200 GHz

S. J. Allen, C. L. Allyn, H. M. Cox, F. DeRosa, and G. E. Mahoney

Appl. Phys. Lett. 42, 96 (1983); http://dx.doi.org/10.1063/1.93740 (3 pages) | Cited 3 times

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The frequency dependence of the small‐signal conductance of GaAs epilayers biased into current saturation is measured from dc to 1200 GHz. The experiments directly expose the effective energy and momentum relaxation rates in the high field anode domain. Velocity overshoot appears as a recovery of the small‐signal device conductance at high frequencies.
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72.20.Ht High-field and nonlinear effects
72.30.+q High-frequency effects; plasma effects

Seeded recrystallization of thick polysilicon films on oxidized 3‐in. wafers

G. K. Celler, McD. Robinson, and D. J. Lischner

Appl. Phys. Lett. 42, 99 (1983); http://dx.doi.org/10.1063/1.93741 (3 pages) | Cited 21 times

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The first successful seeded recrystallization of thick, >10 μm Si films deposited on SiO2 is reported. A method of lateral epitaxial growth over oxide (LEGO) has been developed, in which the thick polycrystalline Si films are completely melted by intense photon flux. The epitaxial recrystallization which follows starts at the seeding regions, spaced as far as 1 mm apart, and results in single crystalline Si‐on‐insulator with a low density of defects. The process is carried out in a special furnace with samples placed between a bank of tungsten halogen lamps and a water‐cooled base, allowing uniform and bow‐free crystallization of complete 3‐in. wafers in ∼60 s.
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68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Metal‐oxide‐semiconductor field‐effect transistors and a ring oscillator fabricated in laser‐recrystallized polycrystalline silicon islands

T. Nishimura, Y. Akasaka, H. Nakata, and A. Ishizu

Appl. Phys. Lett. 42, 102 (1983); http://dx.doi.org/10.1063/1.93761 (3 pages) | Cited 5 times

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Directions of grain boundaries in laser‐recrystallized polycrystalline silicon (polysilicon) islands are found to be arranged along with the laser scan direction, and are connected to the electrical characteristics of metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) fabricated in polysilicon islands. When the laser scan is parallel to the channel direction, grain boundaries work as fast‐diffusion paths of arsenic from source and drain into the channel and a decrease of effective channel length of the MOSFET results. But when the laser scan is perpendicular to the channel direction, few grain boundaries are contributed to diffusion paths of arsenic. A maximum electron mobility of 590 cm2/V s approaching that of a single crystalline silicon can be obtained in devices with a channel length of 3 μm, though grain boundaries work as additional potential barriers for carriers. A nine‐stage ring oscillator is fabricated by applying these results. A minimum propagation delay of 38 ns is obtained.
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68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
66.30.J- Diffusion of impurities
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

W. B. Jackson, D. K. Biegelsen, R. J. Nemanich, and J. C. Knights

Appl. Phys. Lett. 42, 105 (1983); http://dx.doi.org/10.1063/1.93762 (3 pages) | Cited 66 times

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The optical absorption of doped and undoped hydrogenated amorphous silicon (a‐Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy. The absorption spectra show that there is a high defect layer associated with the surface or interface of the film. From comparison of defect absorption and dangling bond spin densities, it is found that a‐Si:H films which have ∼1015 bulk defects/cm3 exhibit surface or interface layers with ∼1012 dangling bonds/cm2.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
75.20.Ck Nonmetals

Shallow zinc diffusion in liquid phase epitaxial GaAs and (GaAl)As at 600 °C

S. E. Blum, M. B. Small, and D. Gupta

Appl. Phys. Lett. 42, 108 (1983); http://dx.doi.org/10.1063/1.93763 (3 pages) | Cited 7 times

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The diffusion of zinc into GaAs and (GaAl)As was studied using a high resolution microsectioning technique. Diffusions were performed into epitaxially grown thin layers comparable to those used in injection laser structures; several boat grown GaAs were also studied. The diffusions were done at a temperature commonly used in device processing; a three‐phase diffusant was used to preclude sample dissociation and damage. A diffusion coefficient of Zn in GaAs of 1.4×10−11 cm2 s−1 was obtained, and this is in good agreement with the extrapolation of the values obtained at higher temperatures. A marked difference in the diffusion profiles of GaAs and (GaAl)As was observed.
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66.30.J- Diffusion of impurities

Magnetic field gradient dependence of the electrical conductivity in a low resistive garnet film

Paolo De Gasperis and Arnaldo D’Amico

Appl. Phys. Lett. 42, 111 (1983); http://dx.doi.org/10.1063/1.93764 (3 pages) | Cited 1 time

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A dramatic dependence of the resistivity on an external magnetic field gradient has been observed for the first time in a p‐type semiconducting calcium‐doped yttrium iron garnet film. In a homogeneous gradient a steady increase of the conductivity (up to 26%) is detected, while by applying a nonuniform gradient only transient variations are found. These results are interpreted as due to an intrinsic physical process independent on the nature of the sputtered contacts. A hole trapping/detrapping mechanism is suggested to qualitatively explain the results in a uiform field gradient and, in particular, the long relaxation times measured.
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72.20.My Galvanomagnetic and other magnetotransport effects
75.50.Gg Ferrimagnetics
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Schlieren method as applied to magnetic recording heads in the scanning electron microscope

Oliver C. Wells and Matthias Brunner

Appl. Phys. Lett. 42, 114 (1983); http://dx.doi.org/10.1063/1.93765 (3 pages) | Cited 5 times

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The fringing field above the surface of a magnetic recording head or magnetic tape can be studied in transmission in the scanning electron microscope (SEM) by either the ‘‘image distortion’’ or the ‘‘Schlieren’’ method. In the image distortion method, the magnetic field is calculated from the distortion caused by the fringing field to the image of either the specimen itself, or of a reference mesh. The Schlieren image shows a contour of equal field‐times‐distance integral (either for the total field or for a specified component of the field) directly. Methods used previously to show the contours of constant values of this integral in the SEM can be improved by the use of the rocking scanning mode about the plane of the aperture stop. The Schlieren method can also give a two‐part image in which one‐half of the micrograph shows the surface of the head viewed at a glancing angle, while the other half of the image shows the fringing field. This method has the potential for stroboscopic operation.
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07.55.-w Magnetic instruments and components
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams
42.79.Mt Schlieren devices

Remote thermal imaging with 0.7‐μm spatial resolution using temperature‐dependent fluorescent thin flims

Paul Kolodner and J. Anthony Tyson

Appl. Phys. Lett. 42, 117 (1983); http://dx.doi.org/10.1063/1.93766 (3 pages) | Cited 29 times

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We have applied the recently developed technique of fluorescent thermal imaging to measure the surface temperature profile of a test sample with unprecedented temperature and spatial resolution. A particularly simple temperature profile was produced by passing an electrical current through a long, unresolvably thin metal stripe on a glass substrate. The sample was coated with a fluorescent thin film whose fluorescence efficiency decreases with increasing temperature. Digital processing of the fluorescence image produces a quantitative surface temperature map with simultaneous temperature and spatial resolutions of 0.08 °C and 0.7 μm, respectively. This spatial resolution approaches for the first time the dimensions of state‐of‐the‐art integrated circuits. Extension of this technique into the nanosecond time domain will allow new advances in the fields of photothermal microscopy, integrated circuit diagnostics, and thermal transport measurements.
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07.20.-n Thermal instruments and apparatus
05.70.Ce Thermodynamic functions and equations of state
42.30.Va Image forming and processing
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Secondary electron emission from uranium surfaces due to bombardment by high‐energy ions

Hao‐Lin Chen, Richard Solarz, and Gaylen Erbert

Appl. Phys. Lett. 42, 120 (1983); http://dx.doi.org/10.1063/1.93744 (2 pages) | Cited 2 times

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The secondary emission of electrons from uranium surfaces was studied as a function of energy and type of the bombarding ions in the range 1.0–5.0 keV. The value of the secondary electron yield (i.e., the number of electrons ejected from a surface per impinging ion) was found to increase linearly with increasing ion energy and to scale roughly as the inverse square root of the mass of impinging ions.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Deposition and reactive ion etching of molybdenum

Abdelhak Bensaoula, J. C. Wolfe, James A. Oro, and A. Ignatiev

Appl. Phys. Lett. 42, 122 (1983); http://dx.doi.org/10.1063/1.93743 (2 pages) | Cited 2 times

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The stress in molybdenum films deposited by dc magnetron sputtering in neon has been characterized. Fabrication of 1‐μ‐thick films 2 cm in diameter on polyimide membranes has been achieved with low‐stress material. A reactive ion etching process is described with 75‐nm resolution and 15:1 aspect ratios.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Fermi levels in solution

John O’M. Bockris and Shahed U. M. Khan

Appl. Phys. Lett. 42, 124 (1983); http://dx.doi.org/10.1063/1.93745 (2 pages) | Cited 13 times

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The conventional concept that there is a so‐called Fermi level for electronic states in solution which can be identified with the reversible potential on the vacuum scale of a redox couple present in solution (and in equilibrium with an electrode therein) is not valid. The inner potential of the solution phase should be added to the redox potential (on the vacuum scale) to achieve identity (at equilibrium) with the Fermi level energy of the electron in the metal to that in the solution.
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82.20.Fd Collision theories; trajectory models
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