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15 Jan 1983

Volume 42, Issue 2, pp. 127-207

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Transversely excited Sr+ recombination laser

M. Brandt

Appl. Phys. Lett. 42, 127 (1983); http://dx.doi.org/10.1063/1.93868 (3 pages) | Cited 5 times

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Operation of a strontium‐ion recombination laser in a transverse‐discharge configuration is reported. Laser oscillation occurred on the 431‐nm transition of Sr+ over a range of discharge parameters, including He gas pressure up to 200 kPa (1500 Torr). Output energy densities of 25 μJ/cm3 have obtained from an active volume of approximately 40 cm3.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Chemical stabilization of the coumarin 1 dye laser

Robert J. von Trebra and Tad H. Koch

Appl. Phys. Lett. 42, 129 (1983); http://dx.doi.org/10.1063/1.93869 (3 pages) | Cited 9 times

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The chemical stabilization of coumarin 1, 7‐diethylamino‐4‐methylcoumarin, in a nitrogen laser pumped dye laser and coumarin 311, 7‐dimethylamino‐4‐methylcoumarin, under cw conditions with sulfur‐free radical chain transfer agents, are described. The mechanism for stabilization involves encounter of triplet coumarin and ground state coumarin with subsequent radical formation and radical disproportionation catalyzed by the chain transfer agents. The output of the coumarin 1 dye laser decreased 10% when the dye solution was stabilized with cysteine hydrochloride over a 12‐h period. The output of the unstabilized dye laser decreased 50% during a similar period of operation.
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42.55.Mv Dye lasers
82.20.Hf Product distribution
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
82.50.-m Photochemistry

Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times

C. T. Seaton, S. D. Smith, F. A. P. Tooley, M. E. Prise, and M. R. Taghizadeh

Appl. Phys. Lett. 42, 131 (1983); http://dx.doi.org/10.1063/1.93870 (3 pages) | Cited 22 times

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We report the novel operation of a natural reflectivity InSb bistable resonator at 77 K, pumped with a cw CO laser at 1819 cm−1, as a single pulse detector with definite threshold energy and as an optical AND gate. The two switching pulses for the AND gate logic operation are 30‐ps single, switched‐out pulses from a mode‐locked neodymium: yttrium aluminum garnet (Nd:YAG) laser. Introduction of a variable time delay between the logic pulses provides a unique technique for measurement of the photogenerated carrier lifetime and yields a recombination time ∼90 ns for a cw CO holding intensity ∼80 W/cm2.
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42.65.-k Nonlinear optics
78.20.-e Optical properties of bulk materials and thin films
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Visible cw single quantum well (AlGa)As diode lasers

C. Lindström, R. D. Burnham, and D. R. Scifres

Appl. Phys. Lett. 42, 134 (1983); http://dx.doi.org/10.1063/1.93871 (3 pages) | Cited 2 times

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In this letter we report on visible cw single quantum well (AlGa)As diode lasers grown by metalorganic chemical vapor deposition. The operating wavelength is 7210 Å. A linear output power up to 10 mW for a threshold current of 75 mA is achieved. The laser consists of a single quantum well double heterostructure with a 9‐μm‐wide proton implanted stripe. Double peaked far‐field patterns, modulation bandwidths to 2.7 GHz, and a flat noise spectra with a reduced shot noise peak at 2 GHz are obtained.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

2.5‐THz frequency difference measurements in the visible using metal‐insulator‐metal diodes

R. E. Drullinger, K. M. Evenson, D. A. Jennings, F. R. Petersen, J. C. Bergquist, Lee Burkins, and H.‐U. Daniel

Appl. Phys. Lett. 42, 137 (1983); http://dx.doi.org/10.1063/1.93852 (2 pages) | Cited 17 times

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Using point‐contact metal‐insulator‐metal diodes, we have demonstrated heterodyne detection of visible laser radiation at frequency differences up to 2.5 THz (generated by a 119‐μm laser). The signal to noise on the observed rf beat falls off at 2.3 dB/octave of laser frequency difference and would seem to indicate that 30‐THz difference beats will be obervable with improved laser stability or signal averaging. While the diode detector ‘‘bandwidth’’ per se has not been evaluated, these measurements demonstrate an increase in the frequency difference which can be measured in the visible by more than an order of magnitude over that previously reported.
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85.30.Hi Surface barrier, boundary, and point contact devices
06.30.Ft Time and frequency

High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy

M. Oron and N. Tamari

Appl. Phys. Lett. 42, 139 (1983); http://dx.doi.org/10.1063/1.93872 (3 pages) | Cited 3 times

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Lasing properties of an InGaAsP (λ=1.3 μm) crescent‐shaped buried heterostructure laser are presented. The structure was grown by single step liquid phase epitaxy on a mesa substrate. High output power in pulsed operation (150 mW/facet) and high external differential quantum efficiency (60%) are realized in this structure even though there is no special layer for current blocking. Fundamental mode operation up to a power level of 30 mW/facet is found. These characteristics are attributed to the effect of the mesa on current flow and they demonstrate the importance of substrate topography on laser performance.
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42.55.Px Semiconductor lasers; laser diodes

Picosecond frequency chirping and dynamic line broadening in InGaAsP injection lasers under fast excitation

Chinlon Lin, T. P. Lee, and C. A. Burrus

Appl. Phys. Lett. 42, 141 (1983); http://dx.doi.org/10.1063/1.93873 (3 pages) | Cited 12 times

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We report the first observation of picosecond time‐resolved frequency chirping within each longitudinal mode of InGaAsP injection lasers under fast excitation. This transient phenomenon is responsible for the characteristic dynamic line broadening observed in the spectra of injection lasers under modulation. The frequency chirping invariably shows a ‘‘red shift’’ during the optical pulse, and is associated with the refractive index increase due to the carrier density decrease in the process of optical pulse generation. The dynamic line broadening will limit the single‐mode fiber transmission bandwidth even when single‐longitudinal‐mode injection lasers are used.
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42.55.Px Semiconductor lasers; laser diodes
62.50.-p High-pressure effects in solids and liquids
71.38.-k Polarons and electron-phonon interactions

High density optical disk with V‐shaped grooves

Michiyoshi Nagashima

Appl. Phys. Lett. 42, 144 (1983); http://dx.doi.org/10.1063/1.93853 (3 pages) | Cited 3 times

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Properties of diffracted light back from an optical disk, which has grooves with a V‐shaped cross‐sectional configuration, are studied by employing scalar diffraction theory. The V‐shaped grooves are spaced bottom to bottom by a presently used track pitch, and all walls of the grooves are capable of storing information. If the optical depth of the V‐shaped groove is one‐fourth of the wavelength of the laser, the 2nd or (−2)nd diffracted light beam contains only the information on a single wall. This property is utilized to double the information density of the optical disk.
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42.79.-e Optical elements, devices, and systems

Ion implanted grating couplers for optical waveguides

J. P. Kurmer and C. L. Tang

Appl. Phys. Lett. 42, 146 (1983); http://dx.doi.org/10.1063/1.93854 (3 pages) | Cited 6 times

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Fabrication of grating couplers by ion implantation for thin‐film optical waveguides is reported. Ion implanted grating couplers were fabricated in both Corning 7059 glass waveguides and Ti‐in‐diffused LiNbO3 waveguides. Experimental coupling efficiencies on the order of a few percent were observed and agree reasonably well with expected theoretical values.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Determination of the minimum x‐ray flux for effective preionization of an XeCl laser

C. R. Tallman and Irving J. Bigio

Appl. Phys. Lett. 42, 149 (1983); http://dx.doi.org/10.1063/1.93855 (3 pages) | Cited 23 times

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We have varied the x‐ray flux used to preionize a discharge‐pumped XeCl laser. With a laser gas pressure of 4 atm, as little as 10−4 rad (∼7×10−9 J/cm2) of 20–40‐kV x rays was found to be sufficient for effectively stabilizing the discharge. The discharge was highly uniform and the laser yielded ∼5 J/l specific energy. This represented a 35% improvement over the performance of the same laser with UV preionization.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Single longitudinal mode operation of high power multiple‐stripe injection lasers

D. E. Ackley

Appl. Phys. Lett. 42, 152 (1983); http://dx.doi.org/10.1063/1.93856 (3 pages) | Cited 31 times

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We report the first observation of single longitudinal mode operation in multiple‐stripe injection lasers. The lasers are fabricated by channel etching and Zn diffusion in three‐layer double heterostructures grown by organometallic vapor phase epitaxy. Linear output characteristics have been observed to cw output powers of 180 mW (uncoated facets) at room temperature with good stripe‐to‐stripe uniformity. Operation in a single longitudinal mode has been seen to 60‐mW output and is evidence for strong stripe‐to‐stripe coupling.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Spectral response of nearly degenerate four‐wave mixing in photorefractive materials

Juan F. Lam

Appl. Phys. Lett. 42, 155 (1983); http://dx.doi.org/10.1063/1.93857 (3 pages) | Cited 5 times

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A theory of nearly degenerate four‐wave mixing in photorefractive materials is presented. We predict the existence of self‐oscillation, intensity‐dependent bandwidth, and nonlinear phase shift effects. UFDAT;8342.65.Cq, 42.80.Ks
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Hp Optical processors, correlators, and modulators

Polarized fluorescence line narrowing measurements of Nd laser glasses: Evidence of stimulated emission cross section anisotropy

D. W. Hall and M. J. Weber

Appl. Phys. Lett. 42, 157 (1983); http://dx.doi.org/10.1063/1.93858 (3 pages) | Cited 11 times

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Polarized 4F3/2→4I11/2 and 4F3/2→4F9/2 emission of Nd3+ in silicate laser glasses are measured using resonant and nonresonant fluorescence line narrowing techniques. The observed depolarization ratio is a measure of the anisotropy of the stimulated emission cross section and the degree of polarization hole burning that will occur for lasers operating in the large‐signal gain regime.
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78.55.Hx Other solid inorganic materials
42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Ce Glasses, quartz

Point‐source x‐ray backlighting for high‐density plasma diagnostics

M. Miyanaga, Y. Kato, and C. Yamanaka

Appl. Phys. Lett. 42, 160 (1983); http://dx.doi.org/10.1063/1.93859 (3 pages) | Cited 13 times

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We have developed a new backlighting method which uses a point x‐ray source. It has the advantages of a large magnification factor, high spatial resolution, and freedom from the source intensity nonuniformity. Initial test results and evaluation of this method in comparison with other methods are presented.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
07.68.+m Photography, photographic instruments; xerography

Dimensionless analysis of ideal imploding liners

R. P. Gupta, M. M. Kekez, J. H. Lau, and G. D. Lougheed

Appl. Phys. Lett. 42, 163 (1983); http://dx.doi.org/10.1063/1.93860 (2 pages) | Cited 1 time

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Optimum designing of an imploding liner system consists of matching the liner dimensions and mass to the driver parameters to achieve high‐energy density in the final pinch phase. Contours of energy efficiency and dimensionless power at the time of liner collapse have been plotted in the space defined by the Katzenstein dimensionless parameters A and B. These plots are shown to be very useful for studying and designing imploding liner systems.
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52.50.Dg Plasma sources
52.55.Ez Theta pinch
52.75.Di Ion and plasma propulsion
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Photovoltaic properties of cadmium sulfide/trivalent‐metal phthalocyanine heterojunction devices

Ah‐Mee Hor, Rafik O. Loutfy, and Cheng‐Kuo Hsiao

Appl. Phys. Lett. 42, 165 (1983); http://dx.doi.org/10.1063/1.93861 (3 pages) | Cited 13 times

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Thin‐film photovoltaic devices consisting of a CdS/trivalent‐metal phthalocyanine heterojunction have been prepared. The devices are fabricated by first electrodepositing a thin film of CdS onto a transparent conducting indium‐tin‐oxide substrate and then depositing phthalocyanine and gold layers sequentially in a vacuum coater. The trivalent‐metal phthalocyanines used are chloroaluminium chlorophthalocyanine (ClAlClPc), chloroaluminium phthalocyanine (ClAlPc), and chloroindium phthalocyanine (ClInPc). Under an AM2 illumination of 75 mW cm−2, these heterojunction devices produce an open‐circuit voltage Voc of 0.70 V and short‐circuit current Jsc of 0.8 mA cm−2. The conversion efficiency is about 0.2%, which represents one of the highest values reported for phthalocyanine photovoltaic devices at high light intensity.
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72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices

Luminescence measurements of laser induced recombination centers in (Al,Ga)As

B. Zysset, R. P. Salathé, and H. H. Gilgen

Appl. Phys. Lett. 42, 168 (1983); http://dx.doi.org/10.1063/1.93862 (3 pages) | Cited 3 times

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The photoluminescence of laser created recombination centers in Al0.22 Ga0.78As has been investigated in the temperature range 30–550 K. A Gaussian type of emmision profile with a half‐width varying from 33 meV at 30 K to 85 meV at 300 K has been found. Profile and variation of half‐width can be described by a configuration‐coordinate (CC) model. The laser generated centers exhibit significant differences compared to native or thermally induced defect centers: the half‐width is much smaller, the peak energy shift with temperature is negative, and the activation energy for quenching is well above room temperature. These differences are explained in terms of the CC model by an unusually low vibration energy of the ground state and possibly by a temperature variation of the separation X0 ofthe potential energy minima of the ground and excited states of the center.
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78.40.Fy Semiconductors
61.72.J- Point defects and defect clusters

Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon

N. Lewis, G. Gildenblat, M. Ghezzo, W. Katz, and G. A. Smith

Appl. Phys. Lett. 42, 171 (1983); http://dx.doi.org/10.1063/1.93863 (2 pages) | Cited 1 time

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Electron microprobe analyses were performed on 75As‐implanted polycrystalline silicon to determine the lateral diffusivity for annealing temperatures between 850 and 1100 °C. A value of 2.5×10−11 cm2/s for the effective lateral diffusion of As in the polycrystalline silicon was determined. Once the grains reached a constant size as a function of annealing time, no change in the value of the diffusion coefficient was noted.
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61.72.U- Doping and impurity implantation
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
66.30.J- Diffusion of impurities
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Nonlinear optical studies of picosecond relaxation times of electrons in n‐GaAs and n‐GaSb

Kathleen Kash, P. A. Wolff, and W. A. Bonner

Appl. Phys. Lett. 42, 173 (1983); http://dx.doi.org/10.1063/1.93864 (3 pages) | Cited 32 times

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The third order nonlinear optical susceptibility of free carriers has been studied in n‐GaAs and n‐GaSb as a function of the frequency difference δω between two Q‐switched CO2 laser beams for different lattice temperatures. The nonlinear response of the electron gas results from the modulation of the carrier mass as the kinetic energy and electron distribution are driven at frequency δω. This modulation arises both from the nonparabolicity of the light mass Γ minimum and, at high temperatures, from the transfer of electrons between the Γ and the heavier mass L minima. The frequency dependence of the response yields the intervalley and energy relaxation times.
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72.15.Lh Relaxation times and mean free paths
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
72.80.Ey III-V and II-VI semiconductors

Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation

A. Neugroschel and F. A. Lindholm

Appl. Phys. Lett. 42, 176 (1983); http://dx.doi.org/10.1063/1.93865 (3 pages) | Cited 8 times

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Experimental evidence for low minority‐carrier diffusivity and mobility in highly doped Si:As is presented and explained by a simple model. The model emphasizes the carrier transport, including trapping, in the tail states of the minority‐carrier band that will influence the minority‐carrier mobility and diffusivity while not influencing the majority‐carrier transport. The measured values for minority holes in n+‐Si:As layers with doping concentrations of about 1.5×1020 cm−3 are Dp≂0.2 cm2/s and μp≂6.3 cm2/Vs, which are about one order of magnitude smaller than the corresponding values for the majority holes. These new results pertain to device design and understanding of heavy doping effects and mechanisms.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Undoped, semi‐insulating GaAs layers grown by molecular beam epitaxy

H. Temkin and J. C. M. Hwang

Appl. Phys. Lett. 42, 178 (1983); http://dx.doi.org/10.1063/1.93866 (3 pages) | Cited 11 times

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Growth of undoped layers of GaAs by molecular beam epitaxy is reported. The resistivity of these layers is consistently greater than 106 Ω cm. Low‐temperature photoluminescence measurements show well resolved exciton bands characteristic of very pure GaAs. The main contaminant is identified as carbon, at an extremely low level, and the spectra are completely free of any carbon‐induced defect bands. The results suggest that the high resistivity of these layers is due to reduction of the background carbon level and the resulting close compensation of residual donors.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Radiation effects on modulation‐doped GaAs‐AlxGa1−xAs heterostructures

D. C. Tsui, A. C. Gossard, and G. J. Dolan

Appl. Phys. Lett. 42, 180 (1983); http://dx.doi.org/10.1063/1.93867 (3 pages) | Cited 8 times

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The effects of 35‐KeV electron beam and 60Co gamma radiation on modulation‐doped GaAs‐AlxGa1−xAs heterostructures were studied by measuring the transport and the quantum transport of and the field effect on, the two‐dimensional (2D) electrons in GaAs at the heterojunction interface. While the γ radiation in doses up to 1.3×106 rad causes no appreciable changes in the 2D transport properties, the electron beam irradiation reduces the electron mobility. This reduction in electron mobility is ∼50% for electron doses of 10−10 C/μm2.
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61.80.Fe Electron and positron radiation effects
61.80.Ed γ-ray effects

Heat treatment of semi‐insulating chromium‐doped gallium arsenide substrates with converted surface removed prior to molecular beam expitaxial growth

S. C. Palmateer, W. J. Schaff, A. Galuska, J. D. Berry, and L. F. Eastman

Appl. Phys. Lett. 42, 183 (1983); http://dx.doi.org/10.1063/1.93874 (3 pages) | Cited 7 times

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Silicon‐doped gallium arsenide molecular beam epitaxy (MBE) layers were grown on chromium‐doped semi‐insulating GaAs (Bridgeman grown) heat‐treated (converted surface removed before growth) or nonheat‐treated substrates. Secondary ion mass spectrometric (SIMS) measurements show a marked reduction of outdiffused manganese in layers grown on heat‐treated substrates with converted surface removed prior to MBE growth. Secondary ion mass spectrometric studies and capacitance voltage free‐carrier profiling indicate a redistribution of Si in layers grown on nonheated substrates not observed in epilayers on heat‐treated substrates (converted surface removed prior to MBE growth).
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Impurity induced disordering of strained GaP‐GaAs1−xPx(x∼0.6) superlattices

M. D. Camras, N. Holonyak, K. Hess, M. J. Ludowise, W. T. Dietze, and C. R. Lewis

Appl. Phys. Lett. 42, 185 (1983); http://dx.doi.org/10.1063/1.93875 (3 pages) | Cited 42 times

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Data are presented showing that Zn diffusion into a strained GaP‐GaAs1−xPx  (x∼0.6) superlattice (40 periods, Lz∼120 Å GaAsP quantum wells, LB∼120 Å GaP barriers) enhances the interdiffusion of As and P (anion interchange) at the heteriointerfaces, thus resulting in disordered indirect gap bulk crystal GaAs1−xPx (x∼0.8).
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66.30.J- Diffusion of impurities
64.70.K- Solid-solid transitions
64.75.-g Phase equilibria
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Nonuniform photoluminescence intensity distribution on semi‐insulating GaAs and effects of Cr and dislocations

K. Kitahara, M. Ozeki, and A. Shibatomi

Appl. Phys. Lett. 42, 188 (1983); http://dx.doi.org/10.1063/1.93876 (3 pages) | Cited 13 times

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The nonuniformity of semi‐insulating GaAs is studied by the near‐band‐edge luminescence (PL) intensity profile along the diameter of circular wafers grown by the liquid encapsulated Czochralski technique. The shapes of the profiles depend on the location of the wafer in the ingots and on the density of Cr. Many sharp peaks are observed in the profiles of undoped and lightly Cr‐doped ingots but are suppressed by heavy doping of Cr. PL intensity is enhanced in the region where dislocation density is high. This correlation is explained by the interaction between the dislocation and the nonradiative center.
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78.40.Fy Semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.U- Doping and impurity implantation
81.10.Fq Growth from melts; zone melting and refining
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