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1 Feb 1983

Volume 42, Issue 3, pp. 211-305

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Observation of relaxation resonance effects in the field spectrum of semiconductor lasers

K. Vahala, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 42, 211 (1983); http://dx.doi.org/10.1063/1.93894 (3 pages) | Cited 33 times

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Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers. Measurements of their power dependence show they are linked to the relaxation resonance. We attribute these maxima to combined phase and amplitude fluctuations at the relaxation resonance. A theoretical calculation of the field spectrum using the results of a noise analysisincorporating carrier dynamics agrees very well with observations.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.62.-b Laser applications

Photolysis of KI/Xe mixtures at 193 nm: Observation of KXe∗ emission

A. M. Schilowitz and J. R. Wiesenfeld

Appl. Phys. Lett. 42, 213 (1983); http://dx.doi.org/10.1063/1.93895 (3 pages) | Cited 1 time

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Photodissociation of KI at 193 nm in the presence of Xe yields excimer emission in the region 410–530 nm. The intensity distribution differs dramatically from that observed following direct pumping, K (5 2 P)←K (4 2 S), the green emission being significantly weaker than that reported previously. Also, the rate of K(5 2 P) deactivation upon collision with Xe is quite inefficient, k<10−13 cm3 molecule−1 s−1. A simple mechanism involving a curve crossing in KXe resulting in efficient quenching of K (5 2 P) to K(5 2 S) is not supported.
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31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
33.20.Kf Visible spectra
34.20.-b Interatomic and intermolecular potentials and forces, potential energy surfaces for collisions

Picosecond correlation measurements of indium phosphide photoconductors

P. M. Downey, D. H. Auston, and P. R. Smith

Appl. Phys. Lett. 42, 215 (1983); http://dx.doi.org/10.1063/1.93896 (3 pages) | Cited 14 times

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The response times of InP photoconductors under picosecond optical illumination are observed to differ widely depending on whether the electrical bias is dc or a short pulse. The use a pulsed bias gives a slower response (>100 ps) which is more characteristic of the intrinsic material properties, than a dc bias which gives a very fast (<15 ps) response and can be attributed to imperfect contacts.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling

Spectroscopic detection of silylene in the infrared multiphoton decomposition of silane

J. F. O’Keefe and F. W. Lampe

Appl. Phys. Lett. 42, 217 (1983); http://dx.doi.org/10.1063/1.93897 (3 pages) | Cited 18 times

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Spectroscopic examination of the luminescence from SiH4 and SiH4‐SiF4 mixtures that are irradiated with an unfocussed, pulsed CO2 infrared laser at a fluence of 0.75 J/cm2 shows the emission to be due to the transitions SiH2(1B1, ν′=2, 3) →SiH2(1A1, ν″=1) and thus clearly demonstrates the presence of SiH2 in the decomposing gas. The form of the time dependence of the emission is determined by the collisional energy pooling processes that produce highly excited SiH4 molecules and does not permit an assessment of the lifetime of the 1B1 state of SiH2.
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33.20.Kf Visible spectra
42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.50.Hp Processes caused by visible and UV light

Infrared absorption of thin metal films: Pt on Si

G. D. Mahan and D. T. F. Marple

Appl. Phys. Lett. 42, 219 (1983); http://dx.doi.org/10.1063/1.93898 (3 pages) | Cited 14 times

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It is shown that metal films will absorb more infrared radiation if they are made thinner. For most metals, the maximum absorptance is obtained for films which are less than 100 Å in thickness. Experiments are reported here for Pt on Si, for which peak absorptance of 3.39‐μm radiation incident through the Si is found to be 0.5±0.1 for a film 80 Å thick.
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78.66.Bz Metals and metallic alloys

Optically pumped sodium‐dimer supersonic‐beam laser

P. L. Jones, U. Gaubatz, U. Hefter, K. Bergmann, and B. Wellegehausen

Appl. Phys. Lett. 42, 222 (1983); http://dx.doi.org/10.1063/1.93899 (3 pages) | Cited 12 times

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Continuous laser operation in an optically pumped Na2 supersonic beam with thresholds below 1 mW and output powers in the order of 600 μW have been achieved. Laser operation independent of molecular beam parameters is investigated. This novel device holds promise for the creation of molecular beams with highly vibrationally excited molecules.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Saturation splitting of phase‐conjugate line through resonant degenerate four‐wave mixing in SF6

J. L. Boulnois, P. Aubourg, A. Van Lerberghe, and Govind P. Agrawal

Appl. Phys. Lett. 42, 225 (1983); http://dx.doi.org/10.1063/1.93900 (3 pages) | Cited 3 times

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Using the isolated P(33)A 12 one‐photon resonance in SF6 the degenerate four‐wave mixing spectrum is shown to exhibit line splitting below a critical pressure. The dependence of this saturation splitting on the gas pressure and the pump intensity is quantitatively studied.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
33.70.Jg Line and band widths, shapes, and shifts
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes

Surface acoustic wave memory correlator on semi‐insulating GaAs

M. R. Melloch, R. S. Wagers, and R. E. Williams

Appl. Phys. Lett. 42, 228 (1983); http://dx.doi.org/10.1063/1.93889 (3 pages) | Cited 2 times

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Experimental evaluation of a monolithic surface acoustic wave memory correlator fabricated on a semi‐insulating GaAs wafer is reported. The correlator employed the piezoelectricity of the GaAs substrate alone without need for a ZnO overlay. A strip coupling technique was used to couple the acoustic region to the Schottky diode region which was defined by selective ion implantation. The device, with 40 wavelength long interdigital transducers, had a 3‐dB bandwidth of 5 MHz. The 0.8‐μs‐long correlation region had 500 diodes uniformly spaced at a spatial frequency of 0.5 Rayleigh wavelengths at 300 MHz. With all ports untuned, the input‐port transduction loss was 16.9 dB; an external correlation efficiency of −87 dBm was obtained.
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43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Laser implosion of thick low‐Z foam coated glass microballoon

K. Okada, T. Mochizuki, S. Sakabe, H. Shiraga, T. Yabe, and C. Yamanaka

Appl. Phys. Lett. 42, 231 (1983); http://dx.doi.org/10.1063/1.93890 (3 pages) | Cited 8 times

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Driving pressure uniformity on the pusher surface has been significantly improved using a thick low density foam coated pellet with 120‐ps laser pulse irradiation. The pusher surface is geometrically kept at 100 μm from the laser absorption region. The hydrodynamic converging mechanism in the foam medium may be responsible for the observed smoothing.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.35.Tc Shock waves and discontinuities

Optogalvanic effects in the obstructed glow discharge

D. K. Doughty and J. E. Lawler

Appl. Phys. Lett. 42, 234 (1983); http://dx.doi.org/10.1063/1.93891 (3 pages) | Cited 12 times

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An anomalously strong 594.5‐nm optogalvanic effect is observed in an obstructed glow discharge in 1.0 Torr of Ne occurring between plane parallel Al electrodes separated by 1.0 cm. The absolute size of a steady‐state optogalvanic effect is characterized by a dimensionless ratio of the change in power delivered to the load resistor over the absorbed laser power. A ratio of −400 for the 594.5‐nm effect is observed in the obstructed glow discharge, while ratios of −6 are typical for the 594.5‐nm effect in the positive column discharge. The 594.5‐nm effect in the obstructed glow discharge results from a laser induced depletion of metastable atoms which play an important role in electron emission from a cold cathode.
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52.80.Hc Glow; corona
52.75.Kq Plasma switches (e.g., spark gaps)

Abel inversion with a simple analytic representation for experimental data

Moshe Deutsch

Appl. Phys. Lett. 42, 237 (1983); http://dx.doi.org/10.1063/1.93892 (3 pages) | Cited 20 times

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The advantages of using a simple analytic representation for experimental data requiring Abel inversion are explored. A simple yet versatile function is proposed, and its Abel inverse derived. Its use allows not only a fast and accurate inversion of the data but also a simple, straightforward calculation of the magnitude of the error in the inverted values in terms of the mean standard deviations of the parameters defining the proposed function. A full discussion of the sources of error and their relative importance is also presented, as well as a numerical example using simulated data. The analysis indicates that unless the measured data is error free to an extremely high degree, no amplification of the experimental error, inherent in the data, occurs with this inversion method even if only three or four adjustable parameters are employed in defining the analytic function.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Plasma ion temperature measurements via charge exchange recombination radiation

R. J. Fonck, R. J. Goldston, R. Kaita, and D. E. Post

Appl. Phys. Lett. 42, 239 (1983); http://dx.doi.org/10.1063/1.93893 (3 pages) | Cited 57 times

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Spatially and temporally resolved plasma ion temperatures can be determined by measuring the Doppler‐broadened line profiles of transitions excited by charge‐exchange recombination reactions between fast hydrogen atoms and fully ionized low‐Z ions. Plasma rotation velocity profiles can also be obtained. A sample result from the PDX tokamak using He+ radiation is presented, and expected line intensities for model cases for PDX and TFTR are calculated.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Kn Thermodynamics of plasmas

Formation of an amorphous metallic hydride by reaction of hydrogen with crystalline intermetallic compounds—A new method of synthesizing metallic glasses

X. L. Yeh, K. Samwer, and W. L. Johnson

Appl. Phys. Lett. 42, 242 (1983); http://dx.doi.org/10.1063/1.93901 (2 pages) | Cited 133 times

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Noncrystalline metallic hydrides can be formed from certain crystalline Zr3Rh intermetallic phases by hydrogenation. X‐ray diffraction patterns, density measurements, and superconducting properties confirmed the transition from the crystalline to the amorphous phase by this solid state reaction. The transition can be explained in terms of a ‘‘chemical frustration’’ effect.
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61.05.C- X-ray diffraction and scattering
81.05.Kf Glasses (including metallic glasses)
64.70.-p Specific phase transitions
64.60.My Metastable phases

Initial stage of sputtering in silicon oxide

Takeo Hattori, Yukimoto Hisajima, Hiroyuki Saito, Toshihisa Suzuki, Hiroshi Daimon, Yoshitada Murata, and Masaru Tsukada

Appl. Phys. Lett. 42, 244 (1983); http://dx.doi.org/10.1063/1.93902 (3 pages) | Cited 5 times

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The effect of argon ion bombardment on a silicon oxide film prepared on a Si(111) surface by dry oxidation was investigated by measuring partial yield spectra in addition to the oxygen induced Si 2p core level shift. The experimental observations can be understood such that the SiO2 network is decomposed at the initial stage of argon ion bombardment. In the following stage of bombardment, the silicon oxide films are sputter etched resulting in a decrease in the oxide film thickness.
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61.80.Jh Ion radiation effects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
71.20.-b Electron density of states and band structure of crystalline solids

Growth of CdTe films on sapphire by molecular beam epitaxy

T. H. Myers, Yawcheng Lo, R. N. Bicknell, and J. F. Schetzina

Appl. Phys. Lett. 42, 247 (1983); http://dx.doi.org/10.1063/1.93903 (2 pages) | Cited 45 times

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Results of initial attempts to grow cubic‐phase CdTe films on sapphire by molecular beam epitaxy are reported. Depositions have been completed on (1102) R‐plane, (1210) A‐plane, and (0001) basal plane substrates. Substrate temperatures in the range 260–350 °C were employed along with deposition rates of 1.5–7.5 Å/s. Depositions on (1102) sapphire generally produced films containing some elements of the hexagonal phase, as disclosed by x‐ray diffraction and UV reflectance measurements. Sharp cubic‐phase epitaxy was obtained for thick (∼5 μm) CdTe films grown on (1210) and (0001) sapphire substrates. The epitaxial films are smooth and mirrorlike in appearance. Nomarski micrographs show a featureless CdTe surface.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High quality polysilicon by amorphous low pressure chemical vapor deposition

G. Harbeke, L. Krausbauer, E. F. Steigmeier, A. E. Widmer, H. F. Kappert, and G. Neugebauer

Appl. Phys. Lett. 42, 249 (1983); http://dx.doi.org/10.1063/1.93904 (3 pages) | Cited 48 times

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Undoped and in situ phosphorus‐doped low pressure chemical vapor deposited polysilicon films have been studied by various structural analysis and optical techniques as a function of deposition temperature. Polysilicon films of high quality can only be obtained by deposition in the amorphous phase and subsequent crystallization.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Single‐valued strength of ‘‘perfect’’ silica fibers

C. R. Kurkjian and U. C. Paek

Appl. Phys. Lett. 42, 251 (1983); http://dx.doi.org/10.1063/1.93905 (3 pages) | Cited 35 times

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An analysis has been made of the tensile strength statistics of two silica fibers with quite different degrees of diameter uniformity. It has been found that the coefficient of variation in diameter (νd) is equal to that in minimum diameter (νd,min) and that the measured coefficient of variation in breaking load (νL) and breaking stress (calculated assuming constant d) are twice this value. Since νL =νσ =2νd =2νd,min it is clear the apparent variability in strength is the result of the variability in diameter and therefore the real strength is essentially single valued. Because of this lack of statistical variation in breaking strength, it is suggested that these fibers are flaw‐free as drawn.
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62.20.M- Structural failure of materials
46.50.+a Fracture mechanics, fatigue and cracks
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Optically pumped 1.55‐μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy

K. Alavi, H. Temkin, W. R. Wagner, and A. Y. Cho

Appl. Phys. Lett. 42, 254 (1983); http://dx.doi.org/10.1063/1.93906 (3 pages) | Cited 24 times

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We report the first successful realization of room‐temperature laser action at a wavelength of 1.55 μm in a new double heterostructure in which the active layer of GaxAlyIn1−x−yAs is confined between two cladding layers of AluIn1−uAs. The structure was grown on InP by molecular beam epitaxy, and was pumped optically by a Q‐switched yttrium aluminum garnet laser. Peak output power of up to 5 W was obtained at an incident power corresponding to four times that required for threshold without catastrophic degradation. Temperature dependence of the threshold power can be characterized by Pth∼exp(T/T0) with T0=60 °C for 20 °C≤T≤100 °C.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.55.Px Semiconductor lasers; laser diodes

Stimulated emission in strained GaAs1−xPx‐GaAs1−yPy superlattices

M. J. Ludowise, W. T. Dietze, C. R. Lewis, N. Holonyak, K. Hess, M. D. Camras, and M. A. Nixon

Appl. Phys. Lett. 42, 257 (1983); http://dx.doi.org/10.1063/1.93888 (3 pages) | Cited 12 times

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Photoluminescence data are presented on a direct‐well GaAs1−xPx‐GaAs (x∼0.25) strained superlattice (SL) (barrier LB ∼75 Å, quantum well Lz∼75 Å) and on indirect‐well GaP‐GaAs1−xPx (x∼0.6) strained SL’s (LB, Lz∼120 Å and LB, Lz∼60 Å) grown by organometallic vapor phase epitaxy. Stimulated emission (at 300 and at 77 K) is observed in the former but only weak luminescence in the latter, thus establishing that a large density of defects at the heterointerfaces is not necessarily an issue in strained SL’s and that so far zone‐folding effects, and SL ‘‘indirect‐direct’’ conversion, have not been observed in indirect systems.
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42.55.Px Semiconductor lasers; laser diodes
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.20.-e Optical properties of bulk materials and thin films
68.55.-a Thin film structure and morphology

Photoexcited carrier lifetime and Auger recombination in 1.3‐μm InGaAsP

B. Sermage, H. J. Eichler, J. P. Heritage, R. J. Nelson, and N. K. Dutta

Appl. Phys. Lett. 42, 259 (1983); http://dx.doi.org/10.1063/1.93907 (3 pages) | Cited 41 times

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We have measured the time‐resolved decay of photoexcited carriers in InGaAsP subsequent to mode‐locked laser pulse excitation at 1.06 μ. Carrier decay rates were evaluated from bleaching recovery and luminescence decay measurements as a function of injected carrier density over a two‐decade range (1017–1019 cm−3). At low and moderate density the decay rate follows the variation with excitation expected for radiative decay. At high carrier density (above 2×1018 cm−3), the decay rate increases more rapidly with carrier density, indicating the onset of nonradiative recombination which can be accounted for by Auger recombination with an Auger coefficient of A=2.3±1×10−29 cm6 s−1. This compares to the calculated Auger coefficient range of 0.7–1.4×10−28 cm6 s−1. We discuss the influence of our measured decay rates on the threshold temperature dependence of InGaAsP‐1.3 μ lasers by calculating expected T0 values, using a range of representative values for threshold carrier density and temperature dependence of the Auger decay rate. Our results suggest that while Auger recombination does contribute to the temperture dependence of the InGaAsP‐1.3 μ laser it may not alone fully account for the observed room‐ temperature T0 values.
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79.20.Fv Electron impact: Auger emission

Characteristics of modulation‐doped AlxGa1−xAl/GaAs field‐effect transistors: Effect of donor‐electron separation

T. J. Drummond, R. Fischer, S. L. Su, W. G. Lyons, H. Morkoç, K. Lee, and M. S. Shur

Appl. Phys. Lett. 42, 262 (1983); http://dx.doi.org/10.1063/1.93908 (3 pages) | Cited 5 times

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The dc characteristics of modulation‐doped AlxGa1−xAs/GaAs field‐effect transistors have been studied experimentally and theoretically to determine the effect of the thickness of the undoped AlxGa1−xAs spacer layer commonly left at the heterointerface. Increasing the thickness of the spacer layer decreases charge transfer and increases mobility. Current transport in short channel transistors, however, is limited by the electron saturation velocity which is independent of the spacer thickness. Due to increased charge transfer, decreasing the spacer thickness from 100 to 20 Å doubled the maximum saturation current and transconductance. This should allow faster switching speeds to be obtained. A maximum current of 24 mA was obtained for a gate width of 145 μm with a 40‐Å spacer and a transconductance of 250–275 mS/mm was obtained for a device with a 20‐Å spacer. Theoretical results indicate that intrinsic transconductances greater than 900 mS/mm are possible. Preliminary small‐signal rf measurements indicate a maximum available gain of about 9 dB at 8 GHz.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices

Evaluation of aluminum‐GaAs Schottky barriers using Norde’s modified current‐voltage analysis

G. P. Schwartz and G. J. Gualtieri

Appl. Phys. Lett. 42, 265 (1983); http://dx.doi.org/10.1063/1.93909 (3 pages) | Cited 3 times

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Schottky barrier heights for aluminum‐(100) GaAs diodes with and without an interfacial native oxide layer have been evaluated using Norde’s method of current‐voltage analysis. Barrier heights determined by Norde’s method on sputter‐annealed, oxide‐free substrates are systematically lower (0.53–0.59 eV) than values determined by photoresponse measurements (0.78±0.03 eV). Anomalous structure in the form of a second minimum was observed in the Norde plots for unsputtered substrates on which a thin native oxide was present. The barrier heights obtained from the second minimum observed at high forward bias (∼0.75 V) were 0.90–0.95 eV, whereas photoresponse measurements indicated barriers of 1.00±0.01 eV.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
73.40.Ei Rectification
73.40.Ns Metal-nonmetal contacts

Characteristics of Schottky diodes at 10.6 μm

N. Inoue, K. Harakawa, and Y. Yasuoka

Appl. Phys. Lett. 42, 268 (1983); http://dx.doi.org/10.1063/1.93910 (2 pages) | Cited 3 times

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Antenna‐coupled point contact n‐Ge/tungsten Schottky diodes have been used to detect CO2 laser radiation, and a very clear antenna pattern is obtained for an electric field polarized in the plane of incidence. The polarity of the detected voltage of the diode at low frequency and CO2 laser frequency regions indicates that the nonlinear I‐V characteristic of the diode at low frequency persists up to the CO2 laser frequency.
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85.30.De Semiconductor-device characterization, design, and modeling
73.30.+y Surface double layers, Schottky barriers, and work functions

Orientation effect of self‐aligned source/drain planar GaAs Schottky barrier field‐effect transistors

N. Yokoyama, H. Onodera, T. Ohnishi, and A. Shibatomi

Appl. Phys. Lett. 42, 270 (1983); http://dx.doi.org/10.1063/1.93911 (2 pages) | Cited 9 times

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The effect of orientation on self‐aligned source/drain planar GaAs Schottky barrier field‐effect transistors (FET’s) has been investigated. The dependence of the threshold voltage of FET’s on gate length was measured for FET’s oriented in two perpendicular [110] directions. Both stress‐enhanced lateral spread of implanted ions and lateral diffusion at the gate material/GaAs interface are proposed as possible mechanism to account for the orientation effect. The experiments indicate that the preferred direction for the self‐aligned FET fabrication on a (100) substrate is [011].
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85.30.Tv Field effect devices

Plasma enhanced beam deposition of thin dielectric films

R. P. H. Chang and S. Darack

Appl. Phys. Lett. 42, 272 (1983); http://dx.doi.org/10.1063/1.93912 (3 pages) | Cited 6 times

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A low‐temperature (30–250 °C) technique for depositing thin films of stoichiometric, amorphous dielectric layers with a sharp interface between the film and the substrate is proposed and demonstrated. The technique uses a combination of atomic or molecular beams of which at least one of the sources is generated by a plasma. As examples, SiO2 and Al2O3 films have been deposited on Si, GaAs, InP, InGaAs substrates. It is shown that the interface between the dielectric and the semiconductor is extremely sharp and that no native growth of oxides occurred on the semiconductor surface during film deposition. The physical properties of the deposited SiO2 are nearly identical to those of thermal oxides grown on Si. Preliminary electrical properties show that the films have a breakdown field strength of about 5×106 V/cm, and the 1‐MHz C‐V curves shown hystereses of 50 mV with a sweep rate of 100 mV/s. The fixed charge density is about 3.5×1011 cm−2.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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