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15 Feb 1983

Volume 42, Issue 4, pp. 309-398

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Effect of electric fields on Cr redistribution at GaAs surfaces

Camellia M. L. Yee, P. A. Fedders, and C. M. Wolfe

Appl. Phys. Lett. 42, 377 (1983); http://dx.doi.org/10.1063/1.93945 (3 pages) | Cited 3 times

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During the annealing of ion‐implanted Cr‐doped GaAs, Cr often redistributes and accumulates at the surface. Although this behavior has been attributed to strain fields and other mechanisms, the widths of these accumulation regions suggest that electric fields due to surface states are a limiting factor in Cr redistribution. For this reason we have developed a thermodynamic model for Cr redistribution which takes into account the electric field due to surface states. A qualitative fit to SIMS data on annealed unimplanted GaAs samples can be obtained with this model. We have also used applied voltages during annealing to modify the amount of band bending and Cr buildup at the surface. This experiment indicates that the accumulated ions are positively charged. We conclude from these experiments that electric fields play a significant role in the redistribution of Cr at GaAs surfaces.
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72.80.Ey III-V and II-VI semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.35.Md Surface thermodynamics, surface energies

Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

O. Wada, S. Miura, M. Ito, T. Fujii, T. Sakurai, and S. Hiyamizu

Appl. Phys. Lett. 42, 380 (1983); http://dx.doi.org/10.1063/1.93946 (3 pages) | Cited 9 times

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A Schottky barrier photodiode and a field‐effect transistor (FET) have been monolithically integrated on a GaAs substrate using molecular beam epitaxy. The electronic isolation between constituent elements has been achieved by the present device structure in which a semi‐insulating substrate is used. The dark current at the punchthrough voltage as low as 8×10−10 A and a uniform quantum efficiency over the photosensitive area have been observed by the measurements. A linear amplification of the photocurrent by the FET over a wide range of incident light power has been confirmed. The amplification ratio of 19 has been achieved with a 10‐kΩ photodiode load resistor. The present result demonstrates the usefulness of molecular beam epitaxy in realizing optoelectronic integrations.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Hi Surface barrier, boundary, and point contact devices
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Electrical and optical properties of InP grown by molecular beam epitaxy using cracked phosphine

Robert Chow and Young G. Chai

Appl. Phys. Lett. 42, 383 (1983); http://dx.doi.org/10.1063/1.93947 (3 pages) | Cited 6 times

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InP was grown by molecular beam epitaxy on InP(100) substrates using In and phosphorus cracked from PH3. The dependence of the electrical and optical properties of the films on the substrate and cracking furnace temperature is discussed. One film had 40% the photoluminescence intensity of that from an InP bulk standard, an unintentional background‐doping concentration of 1×1016 cm−3, and a mobility of 12 250 cm2/V at 77 °K. The lowest unintentional background doping concentration obtained was 2.1×1015 cm−3 at 77 °K. Surface morphology was excellent for a substrate temperature of 400 °C.
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68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Complete dielectric isolation by highly selective and self‐stopping formation of oxidized porous silicon

R. P. Holmstrom and J. Y. Chi

Appl. Phys. Lett. 42, 386 (1983); http://dx.doi.org/10.1063/1.93916 (3 pages) | Cited 12 times

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Complete dielectric isolation of silicon regions 45 μm wide for microcircuits on silicon substrates is demonstrated by selective formation of oxidized porous silicon in heavily doped n‐type regions. Anodic etching of n‐type silicon in a hydrofluoric acid electrolyte exhibits a concentration‐dependent voltage threshold. This voltage dependence allows the porous silicon formation process to be selective to heavily doped regions and self‐stopping on lightly doped regions. Rapid oxidation of this porous silicon yields an oxide with dielectric properties approaching those of standard thermally grown silicon oxides. This process is an improvement over previously reported processes utilizing porous silicon in that wider regions (up to 300 μm) are dielectrically isolated by an oxide whose thickness is controllable and uniform so that stress and wafer warpage are minimized.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
73.40.Mr Semiconductor-electrolyte contacts
81.90.+c Other topics in materials science (restricted to new topics in section 81)

Low noise niobium dc SQUID with a planar input coil

V. J. de Waal, P. van den Hamer, and T. M. Klapwijk

Appl. Phys. Lett. 42, 389 (1983); http://dx.doi.org/10.1063/1.93917 (3 pages) | Cited 7 times

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A practical all‐niobium dc superconducting quantum interference device (SQUID) with a niobium spiral input coil has been developed. The SQUID utilizes submicron Josephson junctions. The best intrinsic energy resolution obtained with a 1‐nH SQUID is 4×10−32 J/Hz. A 20‐turn 1.2‐μH input coil is coupled to a 2.3‐nH SQUID with an efficiency of 0.5. The energy resolution with respect to the coil is 1×10−30 J/Hz.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
84.32.Hh Inductors and coils; wiring
07.55.-w Magnetic instruments and components

Electron beam writing on a 20‐Å scale in metal β‐aluminas

M. E. Mochel, C. J. Humphreys, J. A. Eades, J. M. Mochel, and A. M. Petford

Appl. Phys. Lett. 42, 392 (1983); http://dx.doi.org/10.1063/1.93918 (3 pages) | Cited 33 times

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Holes 20 Å diameter and lines 20 Å wide can be cut in sodium β‐alumina, sodium β″ alumina, lithium β‐alumina, potassium β‐alumina, lead β‐alumina, and silver β‐alumina using a small focused electron probe (approximately 104 A/cm2). Drilling can proceed along any crystal direction in the specimen and can penetrate material more than 1000 Å thick maintaining the small (20 Å) diameter. The holes and lines remain stable and the specimen can be removed from the electron microscope and replaced later for further drilling or examination at reduced beam intensities.
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61.80.Fe Electron and positron radiation effects
79.20.Kz Other electron-impact emission phenomena
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams

Pulsed UV laser Raman spectroscopy of silane in a linear‐flow chemical vapor deposition reactor

W. G. Breiland and M. J. Kushner

Appl. Phys. Lett. 42, 395 (1983); http://dx.doi.org/10.1063/1.93919 (3 pages) | Cited 12 times

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For the first time, spatially resolved relative concentrations of silane inside a chemical vapor deposition reactor have been measured with spontaneous Raman spectroscopy using the third harmonic of a Q‐switched neodymium:yttrium aluminum garnet laser. Concentration profiles were obtained under both atmospheric and low total pressure conditions. Considerable depletion of silane in the gas phase was observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
68.55.-a Thin film structure and morphology
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
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Erratum: Temperature and thickness effects on the explosive crystallization of amorphous germanium films [Appl. Phys. Lett. 40, 672 (1982)]

R. Koba and C. E. Wickersham

Appl. Phys. Lett. 42, 398 (1983); http://dx.doi.org/10.1063/1.94113 (1 page)

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Abstract Unavailable
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
99.10.Cd Errata
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