APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Mar 1983

Volume 42, Issue 5, pp. 401-476

Page 1 of 2 Pages Next Page | Jump to Page

Diode laser threshold current density and lasing wavelength as functions of active region thickness

W. Streifer, D. R. Scifres, and R. D. Burnham

Appl. Phys. Lett. 42, 401 (1983); http://dx.doi.org/10.1063/1.93954 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Based on a simple model of the band‐to‐band absorption of a diode laser active region, we formulatean expression for modal gain as a function of pumping current. Using this result yields expressions for threshold current density and lasing photon energy which depend on device parameters including active region thickness, laser length, internal losses, facet reflectivity, etc.
Show PACS
42.55.Px Semiconductor lasers; laser diodes

InGaAsP/InP undercut mesa laser with planar polyimide passivation

U. Koren, T. R. Chen, C. Harder, A. Hasson, K. L. Yu, L. C. Chiu, S. Margalit, and A. Yariv

Appl. Phys. Lett. 42, 403 (1983); http://dx.doi.org/10.1063/1.93955 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
An undercut mesa laser is fabricated on an n+‐InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained.
Show PACS
42.55.Px Semiconductor lasers; laser diodes

High optical power cw operation in visible spectral range by window V‐channeled substrate inner stripe lasers

S. Yamamoto, H. Hayashi, T. Hayakawa, N. Miyauchi, S. Yano, and T. Hijikata

Appl. Phys. Lett. 42, 406 (1983); http://dx.doi.org/10.1063/1.93956 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
High optical power cw operation has been achieved at the wavelength range of 780 nm by newly developed window V‐channeled substrate inner stripe lasers. This laser consists of a waveguiding window region with a plane active layer and a stimulated region with a crescent active layer. These two regions are coupled to each other. cw optical power over 70 mW and low cw threshold current of 30 mA were obtained. Moreover, the fundamental transverse mode was observed up to 60 mW, and it was found that the beam waist along the junction existed at the mirror.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

Ultraviolet photodecomposition for metal deposition: Gas versus surface phase processes

Thomas H. Wood, J. C. White, and B. A. Thacker

Appl. Phys. Lett. 42, 408 (1983); http://dx.doi.org/10.1063/1.93957 (3 pages) | Cited 41 times

Full Text: | Download PDF

Show Abstract
Photodecomposition of organometallic gases has been shown to be potentially useful for high resolution direct metal deposition. However, a number of problems, particularly the low writing rates, must first be solved. An understanding of the deposition mechanism is essential to this task. In particular, the decomposition must be shown to occur either in the gas phase or in the adsorbed layer. We show that this question can be resolved by the dependence of the writing rate on spot size. Measurements of the process show that the decomposition occurs in the gas phase. This result is shown to cause inhomogeneous deposition for exposures through masks with varying feature sizes, and effect will be important to future applications.
Show PACS
42.62.-b Laser applications
79.20.Ds Laser-beam impact phenomena
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Confocal surface acoustic wave microscopy

I. R. Smith, H. K. Wickramasinghe, G. W. Farnell, and C. K. Jen

Appl. Phys. Lett. 42, 411 (1983); http://dx.doi.org/10.1063/1.93958 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
When the scanning acoustic microscope is used in a defocussed mode to measure surface acoustic wave properties, circular surface wave fronts are generated on the specimen which propagate to a diffraction‐limited focus. Thus, high resolution surface wave images are simply formed and a wide range of established nondestructive testing techniques become available to the acoustic microscope. Images obtained in the reflection mode are presented which demonstrate the unexpectedly high spatial resolution.
Show PACS
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Pt Surface waves in solids and liquids
43.20.Fn Scattering of acoustic waves

Directional acoustic microscopy for observation of elastic anisotropy

J. A. Hildebrand and L. K. Lam

Appl. Phys. Lett. 42, 413 (1983); http://dx.doi.org/10.1063/1.93959 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
A directional acoustic microscope is described that has enhanced contrast for elastically anisotropic materials. Directional detection of surface acoustic waves by the acoustic lens is demonstrated on (100) and (111) silicon crystals. The grains of a polycrystalline silicon sample have contrast which varies as a function of lens orientation. Symmetry of contrast variations and measurement of surface wave phase velocity may provide a new way to determine the orientation of microscopic grains.
Show PACS
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Pt Surface waves in solids and liquids
43.35.Gk Phonons in crystal lattices, quantum acoustics
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Plasma parameter estimation from rf impedance measurements in a dry etching system

A. J. van Roosmalen

Appl. Phys. Lett. 42, 416 (1983); http://dx.doi.org/10.1063/1.93948 (3 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
The rf impedance of a dry etching system excited at 13.56 MHz is calculated from the settings of the matching network between the generator and the reactor. It is demonstrated that fundamental plasma parameters, which are useful in the evaluation of dry etching techniques, can be derived from these measurements. For an oxygen discharge at 27 Pa and 350 W m−2 the following parameter values are obtained: maximum ion bombardment energy 76 V, electron density in the glow 5×1014 m−3, ion flux density on the substrates 0.08 A m−2.
Show PACS
52.25.-b Plasma properties
52.70.-m Plasma diagnostic techniques and instrumentation
52.80.Pi High-frequency and RF discharges
81.65.-b Surface treatments

EL2 distributions in doped and undoped liquid encapsulated Czochralski GaAs

D. E. Holmes, R. T. Chen, and J. Yang

Appl. Phys. Lett. 42, 419 (1983); http://dx.doi.org/10.1063/1.93949 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
We compare the longitudinal and radial distributions of EL2 in undoped semi‐insulating and intentionally doped n‐type GaAs crystals grown by the liquid encapsulated Czochralski technique. Longitudinal profiles in undoped crystals are controlled by changes in melt stoichiometry as the crystal is pulled from the melt. EL2 profiles along crystals doped above about 1×1017 cm−3, on the other hand, are controlled primarily by the carrier concentration as a result of the suppression of EL2 by free electrons. Radial EL2 profiles are typically W shaped and M shaped in undoped and doped (above threshold) crystals, respectively. The origin of these radial profiles is discussed in terms of residual stress, melt stoichiometry, and the suppression of EL2 by electrons. Our results are also discussed in the light of the antisite model for EL2.
Show PACS
61.72.-y Defects and impurities in crystals; microstructure
72.80.Ey III-V and II-VI semiconductors
61.50.Nw Crystal stoichiometry
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Time‐dependent small‐angle x‐ray scattering from stress‐induced crazes in polymers

W. S Rothwell, R. H. Martinson, and R. L. Gorman

Appl. Phys. Lett. 42, 422 (1983); http://dx.doi.org/10.1063/1.93950 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
High‐intensity x radiation from the Stanford Synchrotron Radiation Laboratory storage ring has been used in a small‐angle scattering mode to study dynamic deformation behavior in polymers. Complete scattering curves were obtained as a function of time during relaxation with the strain direction oriented parallel and perpendicular to the plane of measurement. Interpretation is made of the resulting information on relative number, size, and time dependence of heterogeneities. A tentative model proposes that the application of stress starts a rapid creation of approximately uniform spherical voids which migrate and coalesce to form crazes and relieve the stress.
Show PACS
61.41.+e Polymers, elastomers, and plastics
62.20.F- Deformation and plasticity
62.20.M- Structural failure of materials
78.70.Ck X-ray scattering

New experimental evidence of surface ripples on gallium arsenide in laser annealing

Noriaki Tsukada, Sumio Sugata, and Yoh Mita

Appl. Phys. Lett. 42, 424 (1983); http://dx.doi.org/10.1063/1.93951 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
This letter presents new experimental evidence of periodic structure or ripples which occur on the surface of crystalline or ion‐implanted gallium arsenide in laser annealing. A new kind of ripple, whose direction does not depend on the electric field vector of the laser beam, appears for the larger angle of incidence between the laser beam direction and the surface normal. The variation in this ripple spacing with the incident angle of the laser beam to the surface normal is different from that for previously reported ripples, whose direction is always found to be almost perpendicular to the electric field vector for the linearly polarized laser beam. We suggest that the spacing for the new ripples can be interpreted from the reinforcement of the initially induced weak and straggling surface disturbances caused by the interference between the incident laser beam and succesively scattered waves.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates

S. Yoshida, S. Misawa, and S. Gonda

Appl. Phys. Lett. 42, 427 (1983); http://dx.doi.org/10.1063/1.93952 (3 pages) | Cited 101 times

Full Text: | Download PDF

Show Abstract
The electrical and luminescent properties of the GaN epitaxial films grown on AlN‐coated sapphire by reactive molecular beam epitaxy have been studied. The GaN films on AlN epitaxial films have larger Hall mobilities and show more intense cathodoluminescence peaks at a wavelength of 360 nm than those of the GaN films grown directly on sapphire, which suggests that the crystal qualities of GaN films are improved by use of AlN‐coated sapphire as substrates. The lattice matching and small difference of the thermal expansion coefficients between GaN and AlN are considered to result in the improvements.
Show PACS
68.55.-a Thin film structure and morphology
78.60.Hk Cathodoluminescence, ionoluminescence
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.60.-p Physical properties of thin films, nonelectronic

Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition

M. A. Khan, R. A. Skogman, R. G. Schulze, and M. Gershenzon

Appl. Phys. Lett. 42, 430 (1983); http://dx.doi.org/10.1063/1.93953 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C2H5)3Ga with NH3. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after compensating the background donor concentration (typically ND ∼1×1019 cm−3) with Be+ or N+ implants. These Schottky barriers were electrically and optically characterized.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.U- Doping and impurity implantation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Electroluminescence in hydrogenated amorphous silicon‐carbon alloy

Hiro Munekata and Hiroshi Kukimoto

Appl. Phys. Lett. 42, 432 (1983); http://dx.doi.org/10.1063/1.93960 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
White electroluminescence (EL) was observed for the first time in the hydrogenated amorphous silicon‐carbon alloy a‐SixC1−x@B:H(x=0.2–0.4) at room temperature. Experiments were carried out for the devices which consisted of an amorphous film sandwiched between two insulating layers of Y2O3. EL is observable above a threshold ac voltage of 100 V. The EL spectrum is slightly different from the photoluminescence spectrum of the amorphous film.
Show PACS
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Kf Glasses (including metallic glasses)

Subnanosecond time‐resolved photoconductive response of semiconducting diamond

Jeff F. Young, L. A. Vermeulen, D. J. Moss, and H. M. van Driel

Appl. Phys. Lett. 42, 434 (1983); http://dx.doi.org/10.1063/1.93961 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The time‐resolved photoconductive response of several natural and synthetic semiconducting (IIb) diamonds has been measured at room temperature using an optoelectronic cross‐correlation technique. The response times are between 100 and 300 ps, indicating a capture cross section for the photoexcited holes of ∼4×10−13 cm−2. We have found that IIb diamonds can serve as a simple, rugged pulsed laser detector for 0.45<λ<4.2 μm.
Show PACS
72.40.+w Photoconduction and photovoltaic effects

Single longitudinal‐mode optical phonon scattering in Ga0.47In0.53As

T. P. Pearsall, R. Carles, and J. C. Portal

Appl. Phys. Lett. 42, 436 (1983); http://dx.doi.org/10.1063/1.93962 (3 pages) | Cited 62 times

Full Text: | Download PDF

Show Abstract
We show that only one of the four Raman active modes in Ga0.47In0.53As shows the required symmetry behavior for longitudinal optical (LO) phonons. An additional mode previously supposed to be LO shows mixed‐mode behavior and may be disorder activated. Our results prove that only one phonon mode in Ga0.47In0.53As is active in scattering electronic carriers, and thus in determining both electron and hole mobilities.
Show PACS
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Computer simulation of carrier transport in planar doped barrier diodes

Robert K. Cook

Appl. Phys. Lett. 42, 439 (1983); http://dx.doi.org/10.1063/1.93963 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The operation of planar doped barrier diodes is studied using a numerical device simulation which solves the carrier energy transport equation self‐consistently with the current continuity equation and Poisson’s equation. This allows the effects of space‐charge injection and carrier heating, which have been neglected in previous studies of these devices, to be studied quantitatively. Results for two different doping profiles are presented and compared with the results calculated using the conventional quasi‐equilibrium transport model. Significant differences between the results are found, demonstrating the importance of including hot‐carrier effects in modeling these devices.
Show PACS
72.20.Ht High-field and nonlinear effects
85.30.De Semiconductor-device characterization, design, and modeling

Novel fine line patterning technique for submicron devices based on selective oxidation of aluminum

Jaime Nulman and J. Peter Krusius

Appl. Phys. Lett. 42, 442 (1983); http://dx.doi.org/10.1063/1.93964 (3 pages)

Full Text: | Download PDF

Show Abstract
A novel fine line patterning technique for the fabrication of submicron devices is described. It is based on local oxidation and anisotropic dry etching of an aluminum film acting as a substitutional mask. Etch selectivities greater than 4:1 between plasma oxidized and unoxidized aluminum have been observed. 1500‐Å‐wide lines with essentially vertical walls have been achieved with this technique. These Al patterns can either be used directly in device structures or as masks for the etching of underlying layers.
Show PACS
85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Melt dynamics of silicon‐on‐sapphire during pulsed laser annealing

Michael O. Thompson, G. J. Galvin, J. W. Mayer, P. S. Peercy, and R. B. Hammond

Appl. Phys. Lett. 42, 445 (1983); http://dx.doi.org/10.1063/1.93965 (3 pages) | Cited 37 times

Full Text: | Download PDF

Show Abstract
Transient electrical conductance measurements have been made on 0.45‐μm silicon‐on‐sapphire during pulsed laser annealing with 25‐ns ruby irradiation. The photoconductive contribution to the transient current was sufficiently small that the entire melt and resolidification process could be directly observed. The technique yields quantitative measures of melt depths, melting velocities (5–13 m/s), and solidification velocities (2.8–3.3 m/s). Combined with the complementary techniques of time‐resolved reflectivity, energy transmission, and calorimetric energy absorption, transient conductance provides a powerful new diagnostic for investigating melt dynamics.
Show PACS
81.40.Tv Optical and dielectric properties related to treatment conditions
72.60.+g Mixed conductivity and conductivity transitions

Observation of oxidation‐enhanced and oxidation‐retarded diffusion of antimony in silicon

T. Y. Tan and B. J. Ginsberg

Appl. Phys. Lett. 42, 448 (1983); http://dx.doi.org/10.1063/1.93966 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
An experiment was carried out to study oxidation‐enhanced and oxidation‐retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160 °C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model assuming that Si self‐interstitials and vacancies coexist in Si in thermal equilibrium at high temperatures. A small adjustment to the interstitial supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects vacancies into (111) wafers in addition to the normal mechanism of interstitial injection due to SiO2 growth.
Show PACS
61.72.Nn Stacking faults and other planar or extended defects
61.72.J- Point defects and defect clusters

Photocapacitance of mobile carriers in hydrogenated amorphous silicon solar cells

Richard S. Crandall

Appl. Phys. Lett. 42, 451 (1983); http://dx.doi.org/10.1063/1.93967 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Measurements of the capacitance due to photogenerated electrons and holes that are displaced by the electric field are described. A model calculation shows that the photocapacitance is a measure of the drift mobility of the carriers.
Show PACS
84.60.Jt Photoelectric conversion

Correlation of Fermi‐level energy and chemistry at InP(100) interfaces

J. R. Waldrop, S. P. Kowalczyk, and R. W. Grant

Appl. Phys. Lett. 42, 454 (1983); http://dx.doi.org/10.1063/1.93968 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
X‐ray photoemission spectroscopy data are used to correlate the interface Fermi‐level pinning energy EiF and the corresponding interface chemistry for n‐type and p‐type InP (100) samples simultaneously subjected to a series of surface treatments. Interfaces of Schottky‐barrier contacts formed during a sequence of Au and of Al depositions made both onto chemically etched and thermally cleaned InP surfaces were investigated. Changes in EiF of up to ∼0.6 eV in the upper half of the InP band gap occurred in response to changes in interface chemistry. The observed behavior of EiF is interpreted in terms of a single defect model with multiple charge states.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.-b Surface treatments

High resolution ion beam lithography at large gaps using stencil masks

J. N. Randall, D. C. Flanders, N. P. Economou, J. P. Donnelly, and E. I. Bromley

Appl. Phys. Lett. 42, 457 (1983); http://dx.doi.org/10.1063/1.93969 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
High resolution masked ion beam lithography (MIBL) is demonstrated at large mask‐to‐sample gaps using two new types of membrane stencil masks. Single layer Si‐rich silicon nitride (SiN) membranes and Si3N4‐SiO2‐Si3N4 (N‐O‐N) sandwich structure membranes are deposited by processes which allow the stress in the films to be adjusted. Transmission holes are reactive‐ion etched entirely through the membranes. This type of stencil mask virtually eliminates mask‐induced scattering. Lines and spaces of 160 nm have been exposed in 0.5‐μm polymethylmethacrylate (PMMA) at gaps as large as 275 μm, using 100‐keV protons. Some of the stencil mask limitations are overcome by multiple exposures. The results suggest that MIBL can be an extremely high resolution proximity printing technique.
Show PACS
61.80.Jh Ion radiation effects
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. Anthony Powell, and Herbert A. Will

Appl. Phys. Lett. 42, 460 (1983); http://dx.doi.org/10.1063/1.93970 (3 pages) | Cited 395 times

Full Text: | Download PDF

Show Abstract
A reproducible process is described for growing a thick single‐crystal layer of cubic SiC on a single‐crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 μm thick and several cm2 in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 cm2/Vs.
Show PACS
81.10.Bk Growth from vapor

Channeling studies of Ge‐GaAs superlattices grown by molecular beam epitaxy

Chin‐An Chang and Wei‐Kan Chu

Appl. Phys. Lett. 42, 463 (1983); http://dx.doi.org/10.1063/1.93971 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
(100) Ge‐GaAs superlattices grown by molecular beam epitaxy have been analyzed using He+ ion channeling spectrometry. Over the individual layer thickness of 25–100 Å for Ge and GaAs in the superlattices, very low dechanneling yields are observed along the 〈110〉 axis. Dechanneling yields along the [100] growth direction, however, are low only for the thicker layer structure, and become increasingly larger than the 〈110〉 ones for the thinner layer structures. These results are opposite to the ones for the InAs‐GaSb superlattices where dechanneling yields along the 〈110〉 axis are much higher than the [100] ones for all the superlattices studied. The channeling results are compared with those using other techniques and their implications on the Ge‐GaAs interfaces discussed.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Flame annealing of arsenic and boron implanted silicon

J. Narayan and R. T. Young

Appl. Phys. Lett. 42, 466 (1983); http://dx.doi.org/10.1063/1.93972 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We have investigated the characteristics of flame annealing of ion implantation damage in (100) and (111) silicon substrates using transmission electron microscopy and Van der Pauw measurements. The temperature of the hydrogen flame ranged from 1050 to 1200 °C and the interaction time from 5 to 10 s. Transmission electron microscopy studies showed that a ‘‘defect‐free’’ annealing could be achieved with concomitant full electrical activation of dopants. The Hall mobility of flame annealed specimens was found to be comparable to pulsed laser annealed specimens.
Show PACS
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.U- Doping and impurity implantation
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close