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15 Mar 1983

Volume 42, Issue 6, pp. 479-545

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Optoelectronic enhancement of the Sagnac effect in a ring resonator and related effect of directional bistability

A. E. Kaplan

Appl. Phys. Lett. 42, 479 (1983); http://dx.doi.org/10.1063/1.94000 (3 pages) | Cited 3 times

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A substantial enhancement (by orders of magnitude) of the Sagnac effect in a passive ring resonator can be attained by using a nonreciprocal feedback. This feedback is based on the nonreciprocal element controlled by the signal proportional to the difference between intensities of counterpropagating waves, and is an optoelectronic analog of nonlinear nonreciprocity proposed by us earlier. Under some critical conditions, this system can exhibit directional bistability and directional switching of the counterpropagating waves.
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07.60.Dq Photometers, radiometers, and colorimeters
42.62.-b Laser applications
85.70.Sq Magnetooptical devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

First order optoelectronic correlation utilizing metal‐semiconductor‐metal photodetectors

Syoji Yamada, Tsuneo Urisu, Takayuki Sugeta, and Yoshihiko Mizushima

Appl. Phys. Lett. 42, 482 (1983); http://dx.doi.org/10.1063/1.94001 (3 pages) | Cited 2 times

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Optoelectronic correlations between two n‐GaAs metal‐semiconductor‐metal photodetectors were measured. An arrangement of two photosensing areas, each having a separation of far less than the minimum possible wavelength on the stripline, was examined. The equivalent circuit analysis clearly explained the observed correlation signals and revealed the limits of the photodetector response.
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41.60.-m Radiation by moving charges

Electrically amplified optical recording in polymer films

M. A. Bosch, E. Good, and R. A. Lemons

Appl. Phys. Lett. 42, 484 (1983); http://dx.doi.org/10.1063/1.93976 (3 pages) | Cited 3 times

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The laser power required to record high contrast marks in a polymer film can be reduced two orders of magnitude by depositing the film on a transparent conductor‐photoconductor‐conductor sandwich. The sensitivity of this medium is controlled by adjusting the voltage applied to the conductors. In the power limited regime, as little as 0.1 mW of laser power can increase the ohmic heating at the focus enough to produce symmetric micrometer size bubbles in the adjacent polymer film without damaging the photoconductor. However, due to the high dark resistivity of the photoconductor, the power dissipation in the unilluminated region is only ≊0.01 W/cm2.
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07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Continuous 300‐K laser operation of strained superlattices

M. J. Ludowise, W. T. Dietze, C. R. Lewis, M. D. Camras, N. Holonyak, B. K. Fuller, and M. A. Nixon

Appl. Phys. Lett. 42, 487 (1983); http://dx.doi.org/10.1063/1.93977 (3 pages) | Cited 49 times

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Continuous (cw) 300‐K laser operation of a 66‐period lower energy GaAs‐InxGa1−xAs (x∼0.2) strained superlattice (SL) and a higher energy 128‐period GaAs1−xPx‐GaAs (x∼0.25) strained SL is demonstrated. The strained SL’s are grown by organometallic vapor phase epitaxy (OMVPE) or metalorganic chemical vapor deposition (MOCVD) with higher gap quaternary confining layers and LB ∼75 Å barriers and Lz ∼75 Å quantum wells. These SL’s are unstable during high level excitation, failing in 2–20 min when operated cw at 300 K as photopumped lasers.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.20.-e Optical properties of bulk materials and thin films
78.40.Fy Semiconductors

Generation of high‐power picosecond continuously tunable radiation between 215 and 245 nm by mixing of Raman and optical parametric light

Y. Takagi, M. Sumitani, N. Nakashima, D. V. O’Connor, and K. Yoshihara

Appl. Phys. Lett. 42, 489 (1983); http://dx.doi.org/10.1063/1.93978 (3 pages) | Cited 7 times

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Upconversion by mixing of optical parametric light with the fourth harmonic of a neodymium:yttrium aluminum garnet (Nd:YAG) laser and fourth harmonic pumped H2 and N2 Raman light has been used to generate high‐power picosecond continuously tunable UV light ranging from 215–245 nm with an energy of more than 100 μJ. The tunability is based on generation of optical parametric light with a range from 900 to 1400 nm.
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07.60.Rd Visible and ultraviolet spectrometers
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Submicrometer periodicity gratings as artificial anisotropic dielectrics

Dale C. Flanders

Appl. Phys. Lett. 42, 492 (1983); http://dx.doi.org/10.1063/1.93979 (3 pages) | Cited 78 times

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Gratings of dielectric material can act as homogeneous birefringent materials if the wavelength of the incident radiation is greater than twice the period of the grating. For the case of square profile gratings, simple equations predict the birefringence versus linewidth‐to‐period ratio of the gratings. By using x‐ray lithography and reactive ion etching, 240‐nm period gratings of polymethylmethacrylate and silicon nitride were fabricated with various linewidths. The birefringence of these was measured at 632.8 nm and found to agree closely with the theory. Silicon nitride gratings which act as half‐wave and quarter‐wave plates in the visible were made.
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42.25.Lc Birefringence
42.79.Dj Gratings
42.70.Gi Light-sensitive materials
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Near‐field and far‐field patterns of phase‐locked semiconductor laser arrays

D. R. Scifres, W. Streifer, R. D. Burnham, T. L. Paoli, and C. Lindström

Appl. Phys. Lett. 42, 495 (1983); http://dx.doi.org/10.1063/1.93980 (3 pages) | Cited 14 times

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A gain‐guided phase‐locked semiconductor laser array has been observed to emit a single narrow lobed far‐field radiation pattern up to 70 mW, at which power level it exhibits a distinct change. We show that this effect results from a new phase‐locked mode attaining threshold; the original mode remains phase locked above this power level.
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42.62.-b Laser applications
42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Diffusion of nitrogen in α‐Ti

A. Anttila, J. Räisänen, and J. Keinonen

Appl. Phys. Lett. 42, 498 (1983); http://dx.doi.org/10.1063/1.93981 (3 pages) | Cited 38 times

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The diffusion coefficients of nitrogen in polycrystalline α‐Ti have been measured by annealing nitrogen‐implanted titanium samples in the low‐temperature region, i.e., 450–700 °C. The nitrogen profiles were probed with the ( p,γ) resonance broadening method. The implantation energies were 20–60 keV and the fluences were 1016–1018 ion/cm2, corresponding to 1.4 and 14 at. % at the maximum of the N profile, respectively. The concentration change had only a slight effect on the diffusivity. The irradiation effect on the diffusivity was studied by bombarding the samples with 20–60 keV 22Ne+ ions with 1016–1018 ion/cm2 fluences and 600–keV protons with a 1018 proton/cm2 fluence. However, no significant change was observed.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects

Heteroepitaxial Si films on yttria‐stabilized, cubic zirconia substrates

I. Golecki, H. M. Manasevit, L. A. Moudy, J. J. Yang, and J. E. Mee

Appl. Phys. Lett. 42, 501 (1983); http://dx.doi.org/10.1063/1.93982 (3 pages) | Cited 27 times

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Epitaxial single‐crystal growth of Si films has been achieved on the (100), (110), and (111) planes of yttria‐stabilized, cubic zirconia single crystals. The Si films were grown by the pyrolysis of SiH4 at temperatures in the range 950–1075 °C and at deposition rates of 0.08–1.2 μm/min. The structural and electrical properties of the Si films have been determined by Rutherford backscattering and channeling, x‐ray diffraction, and Hall effect measurements. Several 0.4–0.5‐μm‐thick (100) and (110) Si films on cubic zirconia were found to be of higher crystal quality than commercial (100) Si‐on‐sapphire films of similar thickness.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.-p Physical properties of thin films, nonelectronic
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Microprobe Raman analysis of picosecond laser annealed implanted silicon

Y. I. Nissim, J. Sapriel, and J. L. Oudar

Appl. Phys. Lett. 42, 504 (1983); http://dx.doi.org/10.1063/1.93983 (3 pages) | Cited 15 times

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The phase transformation induced by a picosecond laser pulse in implanted amorphized silicon has been studied. A single 30‐ps pulse at 1.06‐ and 0.532‐μm wavelengths from a mode‐locked neodymium:yttrium aluminum garnet laser was used to generate a multiannular (up to five rings) recrystallization pattern on an implanted silicon substrate. A Raman microprobe with a 1‐μm spatial resolution was utilized to investigate the annealed spots. These measurements combined with polarized light scattering experiments resulted in a detailed spatial analysis (parallel and perpendicular to the surface) of the recrystallization pattern, that was related to the picosecond laser energy and wavelength. At high incident energies single crystal silicon is observed in the central spot and in the first recrystallized ring of the annealed area.
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64.60.-i General studies of phase transitions
61.72.U- Doping and impurity implantation

Transient photoconductivity studies of the light soaked state of hydrogenated amorphous silicon

R. A. Street

Appl. Phys. Lett. 42, 507 (1983); http://dx.doi.org/10.1063/1.93984 (3 pages) | Cited 29 times

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Studies of transient photoconductivity show that the primary effect of light soaking in hydrogenated amorphous silicon is to introduce dangling bonds of bulk density 1016–1017 cm−3. Light soaking reduces the μτ product of both electrons and holes to values which are quantitatively related to the observed increase in the dangling bond electron spin resonance (ESR) spin density. In addition, no change in the carrier drift mobilities is detected after light soaking.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors
61.43.Fs Glasses
61.43.-j Disordered solids

Interactions between H2 and N2 plasmas and a GaAs(100) surface: Chemical and electronic properties

P. Friedel and S. Gourrier

Appl. Phys. Lett. 42, 509 (1983); http://dx.doi.org/10.1063/1.93985 (3 pages) | Cited 24 times

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The existence and possible origin of surface states on GaAs surface exposed to an N2 plasma have been studied on surfaces cleaned by H2 plasma in a UHV system. The H2 plasma is shown to be very effective in reducing the C and N concentrations at the surface and to a lesser extent, the O concentration. A subsequent heating around 530 °C removes the remaining oxygen and gives a clean surface. The interaction of these clean surfaces with an N2 plasma shows a two‐time constant behavior: (i) a rapid (5 s for our experimental conditions) dielectric (nitride) formation associated with an increase of the work function; (ii) a slow (∼100 s) decrease of the surface photovoltage and of As concentration at the surface. Comparison of n‐ and p‐type samples seems to indicate that this is due to a reduction of the band bending depending on the final As concentration.
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52.40.Hf Plasma-material interactions; boundary layer effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
75.20.Ck Nonmetals

Auger recombination in InGaAsP

A. Haug

Appl. Phys. Lett. 42, 512 (1983); http://dx.doi.org/10.1063/1.93986 (3 pages) | Cited 23 times

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Auger recombination in InGaAsP is calculated taking into account a realistic band structure instead of the usual parabolic approximation. It follows that the direct conduction‐band process is negligible (at T=300 K), contrary to the parabolic approximation. Actually the valence‐band process prevails by far as long as only direct Auger processes are considered. However, if phonon‐assisted Auger recombination is included the phonon‐assisted conduction‐band process dominates. Altogether, a decrease of Auger recombination results, which is in agreement with experiments.
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79.20.Fv Electron impact: Auger emission
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Substrate surface excitations and ionization of particles sputtered from GaAs

Z. Šroubek

Appl. Phys. Lett. 42, 514 (1983); http://dx.doi.org/10.1063/1.93987 (3 pages) | Cited 2 times

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The ionization probabilities of Ga, As, and Zn sputtered from GaAs by He+ and Ar+ ions at different primary ion energies and angles of incidence have been investigated. The data indicate that electronic excitations in the collision cascade are responsible for the ionization of particles sputtered from GaAs. In the ionization process the local atomic order is preserved.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.90.+b Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)

Epitaxial relations in group‐IIa fluoride/Si(111) heterostructures

Tanemasa Asano and Hiroshi Ishiwara

Appl. Phys. Lett. 42, 517 (1983); http://dx.doi.org/10.1063/1.93988 (3 pages) | Cited 54 times

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CaF2, SrF2, BaF2, and mixed (Ca,Sr)F2 films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF2 and SrF2 films prefer to have orientations rotated 180° about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F2 films have orientations identical to those of the substrate, and the BaF2 film is composed of a mixture of the two. Analysis was also made on a Si/CaF2/Si(111) double heterostructure, which showed that the top Si film is again rotated 180° about the normal to the underlying CaF2 surface.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Effect of gettering on leakage current in shallow junctions

M. Ghezzo, G. Gildenblat, and S. S. Cohen

Appl. Phys. Lett. 42, 519 (1983); http://dx.doi.org/10.1063/1.93989 (3 pages) | Cited 1 time

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Shallow junctions in silicon, which have been subjected to a threshold adjust implant, show an increase of leakage current unless annealed at a high temperature. In very large scale integration technology, a high‐temperature treatment is not desirable. We have found that a backside gettering treatment of the As and P implanted junctions allows the annealing temperature of threshold control implantation to be reduced from 1100 to 950 °C, while maintaining a low level of leakage current density.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Electron spin resonance of dangling bonds in highly disordered layers produced by ion implantation in GaP

T. Matsumori, K. Miyazaki, and S. Shigetomi

Appl. Phys. Lett. 42, 521 (1983); http://dx.doi.org/10.1063/1.93990 (3 pages)

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Electron spin resonance spectrum, which can be interpreted to be due to dangling bonds in highly disordered layers produced by 200‐keV N‐ion implantation in GaP crystals, has been observed. The spectrum is symmetrical, Lorentzian, and isotropic with g=2.0032+0.0004 and a linewidth of ∼6 G and appears only in the case of high dose implantation at doses of 5×1015 cm−2 or above. The isochronal annealing curve of the spectrum has two normal annealing stages and one reverse annealing stage. The reverse and the subsequent normal annealing stages shift toward higher temperatures with increasing ion dose.
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61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
61.72.U- Doping and impurity implantation
76.30.Mi Color centers and other defects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Electronic properties of amorphous silicon selenium films

F. G. Wakim, S. A. Abo‐Namous, A. Al‐Jassar, and M. A. Hassan

Appl. Phys. Lett. 42, 523 (1983); http://dx.doi.org/10.1063/1.93991 (2 pages) | Cited 2 times

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The presence of selenium in amorphous silicon films increases the optical gap from 1.25 to 1.8 eV. At the same time, the room‐temperature resistivity increases by four orders of magnitude and thermal activation energy increases from 0.16 to 0.76 and 0.41 eV for the high and low‐temperature regions, respectively.
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73.61.Ng Insulators
75.20.Ck Nonmetals
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Diffusion limited precipitation of oxygen in dislocation‐free silicon

M. J. Binns, W. P. Brown, J. G. Wilkes, R. C. Newman, F. M. Livingston, S. Messoloras, and R. J. Stewart

Appl. Phys. Lett. 42, 525 (1983); http://dx.doi.org/10.1063/1.93992 (3 pages) | Cited 27 times

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The kinetics of oxygen precipitation in silicon have been determined from measurements of the IR 9‐μm absorption band (4.2 K) and we obtain the time constant τ0 for the exponential approach to equilibrium for several temperatures. The density N of precipitate particles was measured directly by chemical etching, and inferred from IR scattering and cold neutron scattering. We use our values of τ0 and N to calculate the diffusion coefficient of oxygen in bulk silicon. This is the first time that this procedure has been used, and we obtain D=0.02 exp(−2.42 eV/kT) cm2 s−1 in the temperature range 650–1050 °C.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.40.Gh Other heat and thermomechanical treatments
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.S- Impurities in crystals

Electron traps in GaAs1−xPx alloys

E. Calleja, E. Muñoz, and F. Garcia

Appl. Phys. Lett. 42, 528 (1983); http://dx.doi.org/10.1063/1.93993 (3 pages) | Cited 18 times

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Deep level electron traps in vapor phase epitaxial GaAs1−xPx materials have been studied by transient capacitance spectroscopy. Light‐emitting diodes and Schottky barriers with x=0, 0.3, 0.4, 0.65, 0.85, and x=1 have been used. Two traps with emission activation energies of ΔEe =0.16±0.02 eV and 0.27±0.02 eV have been found for all samples with x>0.3. A third level with ΔEe =0.87 eV is present in samples with x=0.3 and occasionally in diodes with x=0.4.
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78.40.Fy Semiconductors

Laser‐controlled etching of chromium‐doped 〈100〉 GaAs

Gary C. Tisone and A. Wayne Johnson

Appl. Phys. Lett. 42, 530 (1983); http://dx.doi.org/10.1063/1.93994 (3 pages) | Cited 32 times

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The photocontrolled etching of 〈100〉 Cr:GaAs in HNO3 is examined in the wavelength region of 334–514 nm with an Ar ion laser. The etching rate decreases with increasing wavelength and correlates with the optical absorption coefficient in the GaAs. The etching process is found to be photochemically and not thermally controlled. Etch rates for the UV are 30(μ/s)/(MW/cm2) for laser intensities between 3 and 80 kW/cm2.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Disappearance of topographical contrast in the backscattered electron image in scanning electron microscopy

T. Ikuta

Appl. Phys. Lett. 42, 533 (1983); http://dx.doi.org/10.1063/1.93995 (2 pages) | Cited 2 times

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A computer analysis of the topographical contrast due to surface projection in the backscattered electron image in the scanning electron microscope is described. Present results show that disappearance of the topographical contrast may occur at a certain condition between the incident beam angle and the detector take‐off angle. This condition just corresponds to the experimental results previously reported.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Amplification of total‐reflection‐mode acoustic surface waves in n‐type GaAs films

Chhi‐Chong Wu and Jensan Tsai

Appl. Phys. Lett. 42, 535 (1983); http://dx.doi.org/10.1063/1.93996 (3 pages) | Cited 3 times

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The effect of nonparabolicty on the amplification of total‐reflection‐mode acoustic surface waves in n‐type GaAs films has been investigated quantum mechanically in the GHz frequency region. Numerical results are obtained for an n‐type GaAs epitaxial layer on a semi‐insulating GaAs substrate at 77 K. Results show that the amplification coefficient oscillates with the frequency in the high‐frequency region due to the inter‐sub‐band transitions.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
77.65.-j Piezoelectricity and electromechanical effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Indium diffusion in cadmium selenide thin‐film transistors with indium‐gold contacts

G. J. Scilla and F. C. Luo

Appl. Phys. Lett. 42, 538 (1983); http://dx.doi.org/10.1063/1.93997 (3 pages) | Cited 1 time

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The thicknesses of the In layer in the composite In‐Au source‐drain contacts for CdSe thin‐film transistors (TFT’s) are found to have significant effects on the performance of the devices. By varying the In thickness from 70 to 180 Å, the TFT’s have been changed from strong enhancement to depletion. This effect can be explained by the lateral diffusion of In into CdSe. Using secondary ion mass spectrometry (SIMS), In has been detected in the CdSe. Annealing the devices in N2 at 375 °C increases the concentration of In in CdSe by a factor of 3.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.40.Sx Metal-semiconductor-metal structures
07.75.+h Mass spectrometers

Fabrication and Josephson behavior of high‐Tc superconductor‐normal‐superconductor microbridges

A. de Lozanne, M. S. DiIorio, and M. R. Beasley

Appl. Phys. Lett. 42, 541 (1983); http://dx.doi.org/10.1063/1.93998 (3 pages) | Cited 5 times

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We describe a simple new technique for fabricating superconductor‐normal metal‐superconductor (SNS) microbridges that allows the use of high‐Tc materials. We have used this technique to make the first high‐Tc SNS microbridges, incorporating Nb3Ge, Nb3Sn, and Nb as the superconductor, and Cu and Au as the normal metal. These devices have a Tc up to 19 K and exhibit very good electrical characteristics over a wide range of temperatures. Both the dc and the ac Josephson effects are clearly displayed by these junctions.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
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