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1 Apr 1983

Volume 42, Issue 7, pp. 551-626

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cw electro‐optical characteristics of graded‐index waveguide separate‐confinement heterostructure lasers with proton‐delineated stripe

W. T. Tsang and R. L. Hartman

Appl. Phys. Lett. 42, 551 (1983); http://dx.doi.org/10.1063/1.94024 (3 pages) | Cited 2 times

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Shallow proton‐bombarded stripe‐geometry (5 μm wide, 380 μm long) lasers were fabricated from graded‐index waveguide separate‐confinement heterostructure (GRIN‐SCH) laser wafers grown by molecular beam epitaxy (MBE). Low median cw threshold currents of ∼50 mA were obtained for this stripe‐geometry gain‐guided structure. Such threshold currents represent a reduction by 25% from those of similar geometry lasers fabricated under the same technologies from the lowest threshold regular double heterostructure (DH) lasers wafers grown by MBE or liquid phase epitaxy (LPE). Up to the maximum measured output power of 10 mW/mirror (cw) the linearity is good and the symmetry of the output powers from both mirrors of these GRIN‐SCH (gain guided) lasers compares well to those lasers of the buried heterostructure type (index guided). The average intrawafer variation in the symmetry of the two end mirror outputs can be characterized by the average of the quantity 〈α〉, which is the deviations from unity of the A/B power output ratio measured at 3 mW. For three LPE grown DH wafers 〈α〉 is about ±20%, and varies from ±5% to ±8% for three MBE grown DH wafers. For three GRIN‐SCH wafers, 〈α〉 between ±3% and ±0.8% was obtained. The standard deviations of the cw threshold current distributions for MBE grown lasers (σ≂4 mA dc) are one‐half that for LPE grown lasers. This documents the improved layer thickness and composition control achievable with the MBE growth procedure.
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81.10.Fq Growth from melts; zone melting and refining
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology

Diffraction coupled phase‐locked semiconductor laser array

J. Katz, S. Margalit, and A. Yariv

Appl. Phys. Lett. 42, 554 (1983); http://dx.doi.org/10.1063/1.94025 (3 pages) | Cited 44 times

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A new monolithic, diffraction coupled phase‐locked semiconductor laser array has been fabricated. Stable narrow far‐field patterns (∼3°) and peak power levels of 1 W have been obtained for 100‐μm‐wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.
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42.60.By Design of specific laser systems

1‐Gbit/s code generator and matched filter using an optical fiber tapped delay line

K. P. Jackson, S. A. Newton, and H. J. Shaw

Appl. Phys. Lett. 42, 556 (1983); http://dx.doi.org/10.1063/1.94026 (3 pages) | Cited 4 times

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The macrobend optical fiber tapped delay line is a new device which is ideally suited for the processing of signals that have very large bandwidths. Two new applications of this device are presented: code generation and matched filtering. An 8‐bit code at 1 Gbit/s was generated with a programmable eight tap delay line having 1‐ns tap intervals. Matched filtering at a rate of 1 Gbit/s was also demonstrated with a similar deivce. This letter presents the first fiber optic code generator/matched filter of its kind.
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42.81.-i Fiber optics
06.60.Jn High-speed techniques (microsecond to femtosecond)

Photodeposition of Ti and application to direct writing of Ti:LiNbO3 waveguides

J. Y. Tsao, R. A. Becker, D. J. Ehrlich, and F. J. Leonberger

Appl. Phys. Lett. 42, 559 (1983); http://dx.doi.org/10.1063/1.94027 (3 pages) | Cited 45 times

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An ultraviolet laser photodeposition process based on the photolysis of TiCl4 has been developed. The photochemistry of this new metal‐halide system has been shown to involve a surface‐catalyzed reaction confined to adsorbed molecular layers. By using this process, Ti films have been deposited on LiNbO3 to form, after diffusion, 4‐μm‐wide single‐mode channel waveguides of comparable quality to conventionally fabricated Ti‐indiffused guides. The technique introduces new design flexibility into waveguide fabrication, permitting controlled gradations in the diffused index change and the lateral width along the guide.
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42.79.Gn Optical waveguides and couplers
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
42.82.-m Integrated optics
82.50.-m Photochemistry

Semiconductor integrated étalon interference laser with a curved resonator

Arsam Antreasyan and Shyh Wang

Appl. Phys. Lett. 42, 562 (1983); http://dx.doi.org/10.1063/1.94028 (3 pages) | Cited 5 times

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A semiconductor interferometric laser with a resonator having curved and straight segments is reported. Interference is caused by internal reflection at the junction discontinuity between curved and straight segments due to a slight difference between the wave propagation constants. Lateral mode stability is provided by the fabrication of a buried heterostructure type laser cavity. The outstanding features of the laser are (1) very stable single longitudinal mode and stable lateral mode operation, and (2) a wavelength locking range of up to 23 °C within which the wavelength changes at a rate of 0.5–0.6 Å/°C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

A low‐scattering graded‐index SiO2 planar optical waveguide thermally grown on silicon

David E. Zelmon, Howard E. Jackson, J. T. Boyd, A. Naumaan, and D. B. Anderson

Appl. Phys. Lett. 42, 565 (1983); http://dx.doi.org/10.1063/1.94029 (2 pages) | Cited 7 times

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Planar graded‐index SiO2 optical waveguides characterized by very low scattering have been fabricated on silicon substrates by thermal oxidation. Three samples having thicknesses on the order of 15 μm are characterized by waveguide losses less than 1 dB/cm. The appearance of the waveguide streak and out‐of‐plane scattering measurements using photon counting indicate extremely low scattering. The low scattering along with the weak field confinement present in the graded‐index waveguides is consistent with the dominant waveguide loss being due to coupling to the silicon substrate.
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42.25.Gy Edge and boundary effects; reflection and refraction
42.25.Lc Birefringence
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Low loss poly(methylmethacrylate‐d8) core optical fibers

Toshikuni Kaino, Kaname Jinguji, and Shigeo Nara

Appl. Phys. Lett. 42, 567 (1983); http://dx.doi.org/10.1063/1.94030 (3 pages) | Cited 30 times

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Low loss plastic optical fibers (POF’s) have been prepared employing a poly(methylmethacrylate‐d8) core and fluorinated alkyl methacrylate copolymer cladding with attenuation losses of 20, 25, and 50 dB/km at wavelengths of 660, 780, and 850 nm, respectively. These values were attained using the POF fabrication method which incorporates a closed polymerization and fiber drawing procedure. The POF can allow optical signal transmission over about 1300 m at −34 dBm at a rate up to 10 MHz using a display grade GaAlAs light‐emitting diode whose emission power at 660 nm and 20 mA of forward input current is 1 mW. The loss limit of this poly(methylmethacrylate‐d8) core POF is estimated to be 10 dB/km at 680 nm.
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42.79.Gn Optical waveguides and couplers
42.25.Lc Birefringence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

New concept in optical information storage: Thermal relaxation of strain birefringence

Claudio Puebla and Josef Michl

Appl. Phys. Lett. 42, 570 (1983); http://dx.doi.org/10.1063/1.94004 (3 pages)

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Theoretical and preliminary experimental results are presented to demonstrate a new concept in optical information storage. The recording medium is a birefringent sheet of stretched polymer; the recording event is a modification of the birefringence by the action of heat, for instance, that generated by an absorbed laser pulse, or derived from contact with a heat source; the readout is based on the detection of changes in the state of polarization of a reading beam.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.70.Gi Light-sensitive materials

Conical transducer for generation of acoustic waves in fluids

R. L. Baer, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 42, 573 (1983); http://dx.doi.org/10.1063/1.94005 (2 pages)

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A conical transducer has been developed as an extension of the edge‐bonded transducer. Surface waves on the inside of a conical radiator are used to launch longitudinal waves in fluids. This transducer offers a broad bandwidth and low sidelobe levels.
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43.38.+n Transduction; acoustical devices for the generation and reproduction of sound

Migration of implanted indium in silicon as a function of thermal annealing

R. F. Reihl, G. A. Smith, W. Katz, and E. F. Koch

Appl. Phys. Lett. 42, 575 (1983); http://dx.doi.org/10.1063/1.94006 (3 pages) | Cited 3 times

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The study of indium implantation in silicon has gained considerable interest because of its potential in producing high value resistors in integrated circuits. We have studied the redistribution of indium as a function of high‐temperature anneal and dose. While the data show some anomalous redistribution, the bulk of the implanted indium remains undisturbed supporting a trapping mechanism during solid phase epitaxial growth for high‐temperature thermal anneals up to 1050 °C.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology

Reinvestigation of first phase nucleation in planar metal‐Si reaction couples

Maria Ronay

Appl. Phys. Lett. 42, 577 (1983); http://dx.doi.org/10.1063/1.94007 (3 pages) | Cited 39 times

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It is proposed that the first nucleating phase in planar metal‐silicon reaction couples is that congruently melting phase neighboring the central eutectic in the phase diagram, which is closer in composition to the diffusing species. This phase also must have a low interfacial free energy with one of the elements constituting the phase diagram. The low interfacial free energy is indicated either by eutectic formation with, or, by epitaxial growth on one of the elements. It is suggested that a low‐energy interface is no barrier to diffusion; therefore, phases that nucleate first in metal‐silicon reaction couples are not good as diffusion barriers.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.30.Dz Phase diagrams of other materials
66.30.-h Diffusion in solids
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Picosecond trapping of photocarriers in amorphous silicon

Z. Vardeny, J. Strait, and J. Tauc

Appl. Phys. Lett. 42, 580 (1983); http://dx.doi.org/10.1063/1.94008 (3 pages) | Cited 24 times

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Trapping of photoexcited carriers in the picosecond and subnanosecond time domains was studied by measuring the decay of photoinduced absorption (PA) in a‐Si, a‐Si:F, a‐Si:H, and a‐Si:H:F. We found that when the midgap density of states decreases, both the trapping time and its temperature dependence increase. The observed PA decays are compared to the picosecond photoconductivity decays, and the differences in the response curves are explained. The possibility that geminate recombination might explain our results is ruled out.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ng Disordered solids
78.30.-j Infrared and Raman spectra

Chemically induced interface states in photoelectrochemical cells

M. A. Butler and D. S. Ginley

Appl. Phys. Lett. 42, 582 (1983); http://dx.doi.org/10.1063/1.94009 (3 pages) | Cited 7 times

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This letter reports for the first time a significant improvement of p‐GaP photocathodes for hydrogen evolution by treatment with ruthenium ions. Sub‐band‐gap spectroscopy has revealed that contrary to expectations the ruthenium treatment introduces new states in the gap 1.23 eV above the valence‐band edge and close to a band edge. A new model based upon kinetic considerations is proposed to explain these effects.
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73.40.Mr Semiconductor-electrolyte contacts
82.47.-a Applied electrochemistry
84.60.Jt Photoelectric conversion

Temperature and field dependence of the generation of interface states in the Si‐SiO2 system after high‐field stress

J. K. Wu, S. A. Lyon, and W. C. Johnson

Appl. Phys. Lett. 42, 585 (1983); http://dx.doi.org/10.1063/1.94010 (3 pages) | Cited 11 times

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We have studied the time dependence of the generation of interface states in the Si‐SiO2 system after metal‐oxide‐semiconductor capacitors were stressed by a 7.4‐MV/cm gate positive electric field for 8 h at 90 K. The interface state density increased logarithmically with time for temperatures between 180 and 300 K with fields between +2 and −2 MV/cm. An analysis based upon a distribution of formation energies is proposed to explain the logarithmic time dependence. We find that there are two peaks in this distribution. One peak at 0.7 eV is field independent while the other at 0.9 eV disappears when a zero or negative bias is applied.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

On the mechanism of light‐induced effects in hydrogenated amorphous silicon alloys

S. Guha, J. Yang, W. Czubatyj, S. J. Hudgens, and M. Hack

Appl. Phys. Lett. 42, 588 (1983); http://dx.doi.org/10.1063/1.94011 (2 pages) | Cited 24 times

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We have investigated the effects of both forward bias current soaking in the dark and prolonged light exposure on the photovoltaic properties of lightly doped, n‐ and p‐type hydrogenated amorphous silicon Schottky barrier diodes. The results show that recombination rather than single carrier trapping is responsible for the light‐induced changes.
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84.60.Jt Photoelectric conversion
72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Estimation of the band gap of InPO4

J. F. Wager, C. W. Wilmsen, and L. L. Kazmerski

Appl. Phys. Lett. 42, 589 (1983); http://dx.doi.org/10.1063/1.94003 (3 pages) | Cited 17 times

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The band gap of a thin layer of InPO4 was estimated to be 4.5 eV using a novel approach employing ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. The technique measures the conduction‐band minimum and valence‐band maximum referenced to the In 4d core line energy. Since this technique is highly surface sensitive, it can be used to measure the band gap of a thin layer. This parameter is difficult to measure in such layers using conventional techniques.
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73.40.-c Electronic transport in interface structures
81.65.-b Surface treatments
79.20.Kz Other electron-impact emission phenomena

Development of silver sensitized germanium selenide photoresist by reactive sputter etching in SF6

P. G. Huggett, K. Frick, and H. W. Lehmann

Appl. Phys. Lett. 42, 592 (1983); http://dx.doi.org/10.1063/1.94012 (3 pages) | Cited 11 times

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Silver sensitized germanium selenide/polymer bilevel resist system has been used to pattern structures in SiO2 on silicon. Using reactive sputter etching in an SF6 plasma for developing germanium selenide gives superior results compared to CF4 or CHF3 in terms of sensitivity; 500:1, contrast; 7, and sensitivity; 50 mJ/cm2 at 436 nm. By this method 1‐μ lines and spaces and 1‐μ contact holes have been defined in germanium selenide. These have been transferred into polymer and SiO2 using standard reactive sputter etching with O2 and CHF3, respectively.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.05.Kf Glasses (including metallic glasses)
42.70.Gi Light-sensitive materials
82.50.-m Photochemistry

Electrical and optical properties of sputtered amorphous silicon films prepared under a reduced pumping speed

Nguyen Van Dong, Y. Fournier, and J. Y. Le Ny

Appl. Phys. Lett. 42, 594 (1983); http://dx.doi.org/10.1063/1.94013 (3 pages) | Cited 2 times

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A series of amorphous silicon (a‐Si) films have been deposited by dc sputtering. We have found a new preparation parameter, namely, the pumping speed of the secondary vacuum pump which has a considerable influence on the electronic properties of the material. Samples deposited under a reduced pumping speed possess electrical properties which are extremely sensitive to the presence of hydrogen. Conductivity and photoconductivity may increase over several orders of magnitude with the addition of a relatively small amount of hydrogen.
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81.15.Cd Deposition by sputtering
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Formation of an amorphous Rh‐Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films

S. Herd, K. N. Tu, and K. Y. Ahn

Appl. Phys. Lett. 42, 597 (1983); http://dx.doi.org/10.1063/1.94014 (3 pages) | Cited 80 times

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Interfacial reaction in bilayers of amorphous Si and crystalline Rh thin films has been studied by transmission electron diffraction and microscopy. In a bilayer of ∼190‐Å amorphous Si and ∼60‐Å polycrystalline Rh films, we have observed the formation of an amorphous Rh‐Si alloy film upon thermal annealing at 300 °C. The amorphous alloy film crystallizes into the RhSi phase at 400 °C. On the other hand, no amorphous alloy formation was observed upon annealing a bilayer of ∼150‐Å amorphous Si and ∼100‐Å polycrystalline Rh films; instead, they react at 300 °C to form Rh2Si, followed by the formation of RhSi or a mixture of RhSi and Rh5Si3 around 400 °C.
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68.55.-a Thin film structure and morphology

Lattice location of chromium in semi‐insulating GaAs by ion channeling techniques

T. Haga and Y. Abe

Appl. Phys. Lett. 42, 599 (1983); http://dx.doi.org/10.1063/1.94015 (3 pages) | Cited 11 times

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Proton‐induced x‐ray emission combined with ion channeling techniques has been used to investigate the lattice location of Cr in GaAs grown by the Czochralski method. The angular dependence of Cr x‐ray yields about the 〈100〉 and 〈110〉 directions indicated that the Cr atoms occupied the substitutional sites with no trace of well‐defined Cr interstitials at the concentrations studied. Fe and Ni impurities in Cr‐doped GaAs were located at the substitutional sites whereas Cu impurities were more likely distributed among random sites with respect to the host atoms.
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78.40.Fy Semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
72.80.Ey III-V and II-VI semiconductors

Theory of beam‐induced currents in semiconductors

J. David Zook

Appl. Phys. Lett. 42, 602 (1983); http://dx.doi.org/10.1063/1.94016 (3 pages) | Cited 18 times

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An analytical model is presented for the current flowing in a Schottky diode or shallow p‐n junction when the current is generated by an electron beam or light beam. The model represents an exact solution to the three‐dimensional diffusion equation when the current‐collecting junction is at right angles to a grain boundary or to the semiconductor surface. The finite size of the electron‐hole generation region is readily included in the analysis. The results are given in terms of one‐dimensional integrals which can simply and accurately be evaluated using a programmable hand calculator. The theory provides a basis for using electron‐beam‐induced currents or light‐beam‐induced currents to measure the minority‐carrier diffusion length and surface recombination velocity at a grain boundary or surface.
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84.60.Jt Photoelectric conversion
61.72.Mm Grain and twin boundaries
85.60.-q Optoelectronic devices

Defect states in electron irradiated InGaAsP

M. Levinson and H. Temkin

Appl. Phys. Lett. 42, 605 (1983); http://dx.doi.org/10.1063/1.94017 (3 pages) | Cited 5 times

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Capacitance transient spectroscopy has been used to study defect states in 1‐MeV electron irradiated liquid phase epitaxial InGaAsP. No states were found in the unirradiated material. Irradiation resulted in one electron trap with an electron emission activation energy of 0.38 eV and two hole traps with hole emission activations of 0.29 and 0.46 eV. Annealing behavior and the broad shape of the deep level transient spectroscopy peaks suggest that defect properties are affected by local ordering and stoichiometry in the material. All three defects recover significantly at temperatures <200 °C.
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78.40.Fy Semiconductors
61.72.jd Vacancies
61.72.jj Interstitials
61.80.Fe Electron and positron radiation effects

Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation

Eiichi Suzuki, Yutaka Hayashi, Kenichi Ishii, and Tatsuo Tsuchiya

Appl. Phys. Lett. 42, 608 (1983); http://dx.doi.org/10.1063/1.94018 (3 pages) | Cited 21 times

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Traps introduced by thermal oxidation of a thin nitride film have been investigated using metal‐oxide (top‐oxide)‐nitride‐oxide‐semiconductor memory diodes. Memory properties as a function of the initial nitride thickness before thermal oxidation and the top‐oxide thickness have revealed that the newly created traps are situated mostly at the top‐oxide‐nitride interface. The density of the traps is estimated to be (1.6±0.2)×1013/cm2 independent of the initial nitride thickness and the top‐oxide thickness.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Direct observation of the principal deep level (EL2) in undoped semi‐insulating GaAs

M. R. Brozel, I. Grant, R. M. Ware, and D. J. Stirland

Appl. Phys. Lett. 42, 610 (1983); http://dx.doi.org/10.1063/1.94019 (3 pages) | Cited 63 times

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A high spatial resolution, near infrared absorption method has been used to determine [EL2] concentrations in semi‐insulating undoped Czochralski liquid encapsulated (LEC) GaAs. Fine structure superimposed on the well‐known ‘‘W’’ distribution across 〈110〉 diameters of {001} wafers has been detected. Fine structure has also been directly observed in {110} sections of ingots grown along 〈001〉 using a CCTV vidicon system to observe transmitted infrared radiation. The structure consists of narrow bands of increased absorption which correspond with high densities of dislocations in the same specimens.
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61.72.jn Color centers

Defects in electron‐irradiated, gallium‐doped silicon

Henry M. DeAngelis and Peter J. Drevinsky

Appl. Phys. Lett. 42, 613 (1983); http://dx.doi.org/10.1063/1.94020 (3 pages) | Cited 7 times

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Defect processes were studied in electron‐irradiated, Ga‐doped silicon using deep level transient spectroscopy. Evidence for the production of a Ga‐related defect state is presented. Changes in minority‐carrier lifetime are correlated with recovery and growth of defect states in annealing studies of Ga‐doped silicon.
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61.72.J- Point defects and defect clusters
61.80.Fe Electron and positron radiation effects
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