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1 Apr 1983

Volume 42, Issue 7, pp. 551-626

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Use of a superlattice to enhance the interface properties between two bulk heterolayers

T. J. Drummond, J. Klem, D. Arnold, R. Fischer, R. E. Thorne, W. G. Lyons, and H. Morkoç

Appl. Phys. Lett. 42, 615 (1983); http://dx.doi.org/10.1063/1.94021 (3 pages) | Cited 49 times

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Single interface modulation‐doped Alx Ga1−xAs /GaAs heterostructures with the binary on top of ternary were grown by molecular beam epitaxy. By incorporating a 150‐Å‐thick Alx Ga1−xAs /GaAs three‐period superlattice in place of an undoped Alx Ga1−xAs spacer layer, 10‐K mobilities of up to 256 000 cm2/Vs were obtained. This value is about 6.5 times that of the previous best value. This dramatic improvement is tentatively attributed to the relief of strain caused by the small but significant lattice mismatch although impurity trapping by the superlattice may also play a role. Normal modulation‐doped structures where the ternary is grown on top of binary also showed mobility improvement (about 30%) when the undoped AlGaAs spacer layer is replaced with a three‐period superlattice of the same thickness. This concept should have a significant role in heterojunction bipolar transistors, field‐effect transistors, lasers, and other heterojunction devices.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Hydrogen passivation of defects in silicon ribbon grown by the edge‐defined film‐fed growth process

J. I. Hanoka, C. H. Seager, D. J. Sharp, and J. K. G. Panitz

Appl. Phys. Lett. 42, 618 (1983); http://dx.doi.org/10.1063/1.94022 (3 pages) | Cited 48 times

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Electrically active defects in edge‐defined film‐fed grown silicon ribbon solar cells have been passivated using a hydrogen plasma from a Kaufman ion source. Significant improvements in solar cell efficiency for both low diffusion length starting material (∼20 μm) and high diffusion length (∼50 μm) material have been obtained. For the former, passivation has produced solar cell efficiency improvements as high as 41% and in the case of the latter, solar cell efficiencies as high as 14.5% (AM1) have been obtained. Electron beam induced current micrographs are shown which indicate near total defect passivation for at least the top 9 μm of the solar cell.
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72.80.Cw Elemental semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
84.60.Jt Photoelectric conversion

Superconducting properties of a liquid‐infiltration Nb‐Nb3Sn composite formed during a low‐temperature reaction

M. Hong, G. W. Hull, J. T. Holthuis, W. V. Hassenzahl, and J. M. Hong

Appl. Phys. Lett. 42, 621 (1983); http://dx.doi.org/10.1063/1.94023 (3 pages) | Cited 4 times

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A powder metallurgy based ‘‘liquid‐infiltration’’ method was used to produce multifilamentary Nb‐Sn composite wires. New heat treatments combining relatively low‐temperature aging (≤800 °C) and long reaction time (≥ one day) were used to form superconducting A15 Nb3Sn. This heat treatment can be used for large conductors and practical magnets. Transmission electron microscopy studies revealed that the A15 Nb3Sn was formed in fine filaments which were embedded in the ductile Nb matrix. Small, equiaxed A15 grains extended across the reacted filament. A Tc onset of 17.9 K with a 0.4‐K transition width was obtained. Excellent high‐field critical currents, overall Jc’s ≥104 A/cm2 in a field of 18 T at 4.2 K, were achieved.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors

Ion mixing to produce amorphous Mo‐Ru superconducting films

B. X. Liu, B. M. Clemens, R. Gaboriaud, W. L. Johnson, and M‐A. Nicolet

Appl. Phys. Lett. 42, 624 (1983); http://dx.doi.org/10.1063/1.94002 (3 pages) | Cited 11 times

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Amorphous Mo55Ru45 alloy films were formed by ion mixing of multilayered samples. The ion mixed films, which contain no metalloid element, show excellent superconducting properties. The measured properties are correlated with the microstructure obtained by both x‐ray diffraction and transmission electron microscopy.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors
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