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15 Apr 1983

Volume 42, Issue 8, pp. 631-755

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On the linewidth enhancement factor α in semiconductor injection lasers

K. Vahala, L. C. Chiu, S. Margalit, and A. Yariv

Appl. Phys. Lett. 42, 631 (1983); http://dx.doi.org/10.1063/1.94054 (3 pages) | Cited 43 times

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A simple model for the linewidth enhancement factor α and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results.
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42.55.Ah General laser theory
42.55.Px Semiconductor lasers; laser diodes
72.70.+m Noise processes and phenomena

Index instabilities in proton‐exchanged LiNbO3 waveguides

Alfredo Yi‐Yan

Appl. Phys. Lett. 42, 633 (1983); http://dx.doi.org/10.1063/1.94055 (3 pages) | Cited 37 times

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Measured effective mode indices on a day to day basis reveal an oscillatory behavior which indicates that the index profile of proton‐exchanged LiNbO3 waveguides evolves as a function of time. It is suggested that the profile instability might be brought about by a continuous migration of protons within the thickness of the guiding layer. Some index profile modificaiton may also be introduced during fabrication due to structural changes in the crystal as a function of exchange time.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.70.-a Optical materials

Hard carbon coatings with low optical absorption

B. Dischler, A. Bubenzer, and P. Koidl

Appl. Phys. Lett. 42, 636 (1983); http://dx.doi.org/10.1063/1.94056 (3 pages) | Cited 178 times

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Hydrogenated amorphous (a‐C:H) films were prepared by rf‐plasma deposition from benzene vapor. Complete optical absorption spectra from the UV to the IR (0.2–20.0 μm) have been measured. The optical gap depends linearly on hydrogen content and Eopt can be varied between 0.8 and 1.8 eV. For energies below Eopt the films are almost transparent and absorption is especially low in the 2–6‐μm region (e.g., α=15 cm−1 at λ=2.8 μm). Sharp C–H stretch absorption bands occur near 3.4 μm, giving insight into the microstructure of the films. A newly reported weak band at 3.03 μm is first evidence for C–C triple bonds (sp1 hybridization) in a‐C:H, where sp3 (single) and sp2 (double) C–C bonds dominate.
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75.20.Ck Nonmetals
81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.61.Ng Insulators

Laser oscillation at 3.53 μm from Fe2+ in n‐InP:Fe

P. B. Klein, J. E. Furneaux, and R. L. Henry

Appl. Phys. Lett. 42, 638 (1983); http://dx.doi.org/10.1063/1.94057 (3 pages) | Cited 20 times

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Using pulsed optical excitation (hν>Eg), we have observed laser oscillations at 3.53 μm from the internal d‐shell transitions of Fe2+ in n‐type InP:Fe. The semiconducting nature of the InP host plays an important role in the pumping of the Fe2+ excited state, which occurs via the capture of a conduction‐band electron by Fe3+ created during the exciting pulse.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.40.Fy Semiconductors

Runaway self‐absorption in multikilowatt CO2 lasers

A. S. Kaye and D. L. Naylor

Appl. Phys. Lett. 42, 641 (1983); http://dx.doi.org/10.1063/1.94058 (2 pages)

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Runaway self‐absorption within a CO2 laser cavity, recently reported at high pressure, has also been observed in a low pressure (50 mbar), multikilowatt cw CO2 laser. A numerical model of the laser discharge is used to simulate the runaway absorption and gives results consistent with experiment. Runaway absorption is readily suppressed by eliminating regions of stagnant gas within the cavity.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Nonlinear optical coupling between radiation and confined modes

G. M. Carter and Y. J. Chen

Appl. Phys. Lett. 42, 643 (1983); http://dx.doi.org/10.1063/1.94059 (3 pages) | Cited 42 times

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Equations are developed which describe the coupling between radiation and confined (guided wave or surface plasmon) modes in the presence of an intensity‐dependent index of refraction. Solutions are presented for three numerical examples and comparisons are made with asymptotic solutions. We find that under certain conditions, the addition of the nonlinear index drastically alters the coupling and gives rise to the possibility of optical switching. Experimental parameters for optimizing such switching are discussed.
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42.65.-k Nonlinear optics
42.79.-e Optical elements, devices, and systems

Phase‐locked (GaAl)As laser emitting 1.5 W cw per mirror

D. R. Scifres, R. D. Burnham, C. Lindström, W. Streifer, and T. L. Paoli

Appl. Phys. Lett. 42, 645 (1983); http://dx.doi.org/10.1063/1.94060 (3 pages) | Cited 19 times

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A phase‐locked multiple quantum well (GaAl)As injection laser is demonstrated to emit over 1.5 W/mirror (>3 W total) cw output power at ∼8350 Å with a maximum power conversion efficiency of 17.4%.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.55.-f Lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Integrated optics wave front measurement sensor

R. H. Rediker, T. A. Lind, and F. J. Leonberger

Appl. Phys. Lett. 42, 647 (1983); http://dx.doi.org/10.1063/1.94052 (3 pages) | Cited 3 times

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First results are presented demonstrating the feasibility of using an integrated optics array of Mach–Zehnder dielectric‐waveguide interferometers to measure the phase and amplitude across an optical wave front. The interferometers are formed from single‐mode waveguides produced by Ti diffusion into LiNbO3. The spacing between the arms of the interferometer is 20 μm. The phase difference ϕ between the optical waves incident on the two interferometers arms is measured and compared with theory. The excellent and reproducible agreement between experiment and theory over a number of interferometers suggests that the accuracy of the wave front measurement sensor should be attractively high, limited only by signal statistics and noise considerations. As example, a sensor design is given for which the rms deviation (1σ) in the value of ϕ is less than 4.5° (the rms deviation in the optical path difference is less than λ/80).
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42.82.-m Integrated optics
07.60.Ly Interferometers
42.30.-d Imaging and optical processing

High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers

W. T. Tsang, N. A. Olsson, and R. A. Logan

Appl. Phys. Lett. 42, 650 (1983); http://dx.doi.org/10.1063/1.94053 (3 pages) | Cited 81 times

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We report a new mechanism of direct frequency modulation, the cavity‐mode enhanced frequency modulation (CME‐FM), using the newly developed cleaved‐coupled‐cavity (C3) semiconductor laser. In this operation, one of the diode of the C3 laser was operated as a laser, while the other diode was operated as a frequency modulator. It was shown that a very large frequency excursion of 150 Å and frequency tuning rate of 10 Å/mA have been obtained with a C3 GaInAsP crescent laser operating at 1.3 μm. Time‐resolved spectral and spectral‐resolved pulse response measurements also showed that such C3 lasers operated in highly stable single‐longitudinal mode at all times even under high‐speed direct frequency modulation. In addition to the important application as the optical source in FM optical communication systems, the present CME‐FM C3 laser can also be used as the optical source in wavelength‐division multiplexing systems. Further, it opens the possibility of ultrahigh capacity multilevel optical FM information transmission systems.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Twin‐channel substrate‐mesa‐guide injection lasers fabricated by organometallic vapor phase epitaxy

D. E. Ackley and G. Hom

Appl. Phys. Lett. 42, 653 (1983); http://dx.doi.org/10.1063/1.94061 (3 pages) | Cited 7 times

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An easily fabricated high‐power index‐guided laser, the twin‐channel substrate‐mesa‐guide (TCSM) laser, has been developed for applications in recording, printing, and communications. The TCSM laser is fabricated by one‐step organometallic vapor phase epitaxy (OMVPE) on photolithographically patterned and etched substrates. Linear output characteristics were observed to 40 mW cw with corresponding operation in zero order lateral and transverse modes and no astigmatism. Stable single longitudinal mode oscillation also resulted from the strong refractive index guiding produced by the nonplanar structure.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Inverse Lamb dip spectroscopy using microwave modulation sidebands of CO2 laser lines

Gottfried Magerl, Joan M. Frye, Welf A. Kreiner, and Takeshi Oka

Appl. Phys. Lett. 42, 656 (1983); http://dx.doi.org/10.1063/1.94062 (3 pages) | Cited 9 times

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We report the observation of infrared Lamb dips using a widely tunable laser source. The microwave sidebands generated on CO2 laser lines provide sufficient power (∼0.5 mW) and spectral purity (Δν≲100 kHz) for saturation spectroscopy. Application of this infrared source to the observation of infrared Lamb dip spectra of CH3F and SiF4 is reported.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Ea Infrared spectra
33.20.Vq Vibration-rotation analysis

A new type of laser probe

R. G. Stearns, G. S. Kino, and B. T. Khuri‐Yakub

Appl. Phys. Lett. 42, 659 (1983); http://dx.doi.org/10.1063/1.94063 (3 pages)

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A new technique to measure surface acoustic wave beam profiles is described. A measurement is made of the average phase change of the acoustic wave resulting from periodic heating of the sample surface by an incident modulated laser beam. Scanning of the laser beam across the acoustic wave results in a profile of the energy density in the acoustic beam. To measure the phase change, a surface acoustic wave oscillator configuration is used. Possible application of the technique to the measurement of applied and residual surface stress is discussed.
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43.35.Pt Surface waves in solids and liquids
42.62.-b Laser applications
65.40.De Thermal expansion; thermomechanical effects
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Laser induced deposition of zinc oxide

R. Solanki and G. J. Collins

Appl. Phys. Lett. 42, 662 (1983); http://dx.doi.org/10.1063/1.94064 (2 pages) | Cited 27 times

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We have used an excimer laser to photodeposit uniform (±5%) films of zinc oxide from dimethylzinc and nitrogen dioxide. Deposition rates of 3000 Å/min over 2 cm×5 cm areas were obtained. We have measured the stress, refractive index, etch rate, adhesion, pinhole density, and the stoichiometry of these photodeposited films.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Recombination enhanced dislocation glide in InP single crystals

K. Maeda and S. Takeuchi

Appl. Phys. Lett. 42, 664 (1983); http://dx.doi.org/10.1063/1.94065 (3 pages) | Cited 19 times

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The glide mobility of dislocations in bulk n‐type InP single crystals was measured by the double‐etching method as a function of temperatures with or without 30‐keV electron beam irradiation. The mobility of β dislocations was found to be enhanced by the irradiation in such a manner that the mobility increase is caused by a decrease in the apparent activation energy, which is characteristic of recombination enhanced defect reaction phenomena. The enhancement is not much different in its magnitude from the same type of dislocations in GaAs.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.80.Fe Electron and positron radiation effects
62.20.F- Deformation and plasticity
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Carbon fibers produced by pyrolysis of natural gas in stainless steel tubes

Gary G. Tibbetts

Appl. Phys. Lett. 42, 666 (1983); http://dx.doi.org/10.1063/1.94066 (3 pages) | Cited 56 times

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Carbon fibers of uniform diameter have been grown by pyrolysis of natural gas in type 304 stainless steel (18% Cr, 8% Ni) tubes at temperatures between 950 and 1075 °C. The method utilizes the circulation of wet hydrogen outside the growth tube in order to promote effective nucleation. Fibers 12 cm long having average moduli of 1.8×1011 Pa have been grown.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.10.Bk Growth from vapor

Temperature dependence of liquid crystal tilt angles

H. A. van Sprang and R. G. Aartsen

Appl. Phys. Lett. 42, 669 (1983); http://dx.doi.org/10.1063/1.94067 (3 pages) | Cited 8 times

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In a homogeneous cell the origin of the steep decrease, which is always observed in the liquid crystal tilt angle on an SiO coating as a function of temperature in the range close to Tc, is traced back to the growth of twist domains. It appears that a magnetic null method is unsuited for accurate tilt angle measurements in the relevant temperature region, because it is based on the assumption of a homogeneous director pattern in the sample cell.
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64.70.Ja Liquid-liquid transitions
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
78.20.Fm Birefringence

Ion‐induced amorphous and crystalline phase formation in Al/Ni, Al/Pd, and Al/Pt thin films

L. S. Hung, M. Nastasi, J. Gyulai, and J. W. Mayer

Appl. Phys. Lett. 42, 672 (1983); http://dx.doi.org/10.1063/1.94068 (3 pages) | Cited 111 times

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Amorphization by ion beam irradiation of multilayered samples of Al/Pt, Al/Pd, and Al/Ni has been investigated by selected area diffraction and Rutherford backscattering. With a dose of 2×1014 Xe ions/cm2, uniform mixing is achieved in the Al/Pt system and the amorphous phase is produced over a large composition range. In the Al/Pd and Al/Ni systems, amorphous phases or the equilibrium, crystalline phases are formed depending on the composition of the films. The same results were found when the samples were annealed to form crystalline phases before bombardment. For thin films of these fcc metals, only the simplest intermetallics, NiAl and PdAl, (primitive cubic structures with 2 atoms/cell) were formed in crystalline form by ion‐beam irradiation.
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81.05.Kf Glasses (including metallic glasses)
61.66.Dk Alloys
61.80.Jh Ion radiation effects
64.60.My Metastable phases

Ag photodoping of amorphous chalcogenides

S. A. Lis and J. M. Lavine

Appl. Phys. Lett. 42, 675 (1983); http://dx.doi.org/10.1063/1.94051 (3 pages) | Cited 11 times

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Spectral measurements over the wavelength range of 400–800 nm on As2S3, As2Se3, and GeSe2, measurements on a tuned structure of As2S3, and exact calculations on a multifilm structure support the recent suggestion that the photons relevant to the photodissolution of Ag are absorbed in the Ag and not in the chalcogenide. The observed spectral dependence may be fitted by an internal photoemission model.
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81.05.Kf Glasses (including metallic glasses)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
81.65.-b Surface treatments

Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition

T. Saitoh, S. Muramatsu, T. Shimada, and M. Migitaka

Appl. Phys. Lett. 42, 678 (1983); http://dx.doi.org/10.1063/1.94069 (2 pages) | Cited 39 times

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Amorphous silicon films have been prepared through mercury‐photosensitized decomposition of monosilane gas at low temperatures. The films show optical and electrical properties comparable with those of the best films prepared by plasma chemical vapor deposition. The feasibility of amorphous solar cells with short‐circuit current densities of more than 10 mA/cm2 has been demonstrated by fabrication of a Schottky barrier structure.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Evidence that the gold donor and acceptor in silicon are two levels of the same defect

L‐Å. Ledebo and Zhan‐Guo Wang

Appl. Phys. Lett. 42, 680 (1983); http://dx.doi.org/10.1063/1.94070 (3 pages) | Cited 52 times

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A photocapacitance method was used to monitor the time dependences of the occupation numbers for the gold‐related donor and acceptor in silicon during optical excitation. The experimental data give strong evidence that the donor level corresponds to the +/0 transition and the acceptor to the 0/− transition for one single defect.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors

Picosecond AlxGa1−xAs modulation‐doped optical field‐effect transistor sampling gate

C. G. Bethea, C. Y. Chen, A. Y. Cho, P. A. Garbinski, and B. F. Levine

Appl. Phys. Lett. 42, 682 (1983); http://dx.doi.org/10.1063/1.94071 (3 pages) | Cited 3 times

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New modulation‐doped Alx Ga1−xAs/GaAs metal‐semiconductor field‐effect photodetectors have been fabricated and tested in a novel picosecond optical sampling gate configuration. The rise time was measured to be 12 ps, with a full width at half‐maximum of 27 ps. The optical electronic picosecond cross‐correlation measurement has shown the importance of the two‐dimensional electron gas for high‐speed operation.
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79.20.Ds Laser-beam impact phenomena
42.62.-b Laser applications
85.30.-z Semiconductor devices
85.60.Dw Photodiodes; phototransistors; photoresistors

Rapid temperature variation of hopping conduction in GaAs low‐temperature bolometers

J. K. Wigmore and B. Tlhabologang

Appl. Phys. Lett. 42, 685 (1983); http://dx.doi.org/10.1063/1.94072 (3 pages) | Cited 3 times

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The very rapid temperature dependence between 1 and 4 K of the resistivity of GaAs bolometers was found to follow ρ∼exp(AT−1/4). The most plausible attribution of this behavior was to variable range, single particle, hopping, and our data were consistent with the model of Apsley and Hughes.
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72.80.Cw Elemental semiconductors
78.40.Fy Semiconductors
72.20.-i Conductivity phenomena in semiconductors and insulators
72.90.+y Other topics in electronic transport in condensed matter (restricted to new topics in section 72)

Modification of Schottky barriers in silicon by reactive ion etching with NF3

S. Ashok, T. P. Chow, and B. J. Baliga

Appl. Phys. Lett. 42, 687 (1983); http://dx.doi.org/10.1063/1.94073 (3 pages) | Cited 43 times

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Reactive ion etching of silicon with NF3 gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy. The energetic ions introduce a net positive surface charge which increases the barrier height on  p‐Si and decreases it on n‐Si. The Schottky barrier modification is found to be a function of ion energy as well as gas plasma used.
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52.40.Hf Plasma-material interactions; boundary layer effects
85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions

Self‐interstitial and vacancy contributions to silicon self‐diffusion determined from the diffusion of gold in silicon

F. Morehead, N. A. Stolwijk, W. Meyberg, and U. Gösele

Appl. Phys. Lett. 42, 690 (1983); http://dx.doi.org/10.1063/1.94074 (3 pages) | Cited 43 times

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We present an analysis of gold diffusion profiles in silicon taking into account that both self‐interstitials and vacancies are present at thermal equilibrium. We find that at 1000 °C the contribution of self‐interstitials to silicon self‐diffusion is about equal to that of vacancies.
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61.72.jd Vacancies
61.72.jj Interstitials

Electro‐optical light modulation in InGaAsP/InP double heterostructure diodes

H. G. Bach, J. Krauser, H. P. Nolting, R. A. Logan, and F. K. Reinhart

Appl. Phys. Lett. 42, 692 (1983); http://dx.doi.org/10.1063/1.94075 (3 pages) | Cited 14 times

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The linear electro‐optic coefficient r41 was determined in quaternary double heterostructure waveguides containing a p‐n junction. Over the limited range of measurements, it is independent of wavelength and composition with a value r41=−1.4×10−10 cm/V. A strong quadratic electro‐optic effect has been identified for the first time, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.
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78.20.Jq Electro-optical effects
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
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