APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

1 Jul 1983

Volume 43, Issue 1, pp. 1-129

Page 1 of 2 Pages Next Page | Jump to Page

Direct amplitude modulation of short‐cavity GaAs lasers up to X‐band frequencies

K. Y. Lau, N. Bar‐Chaim, I. Ury, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 43, 1 (1983); http://dx.doi.org/10.1063/1.94153 (3 pages) | Cited 52 times

Full Text: | Download PDF

Show Abstract
Experimental and theoretical studies indicate that a high‐frequency laser with bandwidths up to X‐band frequencies (≳10 GHz) should be one having a short cavity with a window structure, and preferably operating at low temperatures. These designs would accomplish the task of shortening the photon lifetime, increasing the intrinsic optical gain, and increasing the internal photon density without inflicting mirror damage. A modulation bandwidth of >8 GHz has been achieved using a 120‐μm laser without any special window structure at room temperature.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Experimental estimation of an optical disk system with V‐shaped grooves

M. Nagashima, M. Takenaga, T. Yamashita, T. Yoshikane, S. Kagata, Y. Okino, and K. Kamio

Appl. Phys. Lett. 43, 4 (1983); http://dx.doi.org/10.1063/1.94165 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A new high‐density optical disk system has been investigated experimentally. In this system, the optical disk has grooves with a V‐shaped cross‐sectional configuration. The V‐shaped grooves are spaced bottom to bottom by the presently used track pitch, and all walls of the grooves are capable of storing information. The cross talk from information on an adjacent wall has been determined to be almost equal to that of the presently used optical disk, and the new system is verified to double the information density of the optical disk.
Show PACS
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.79.-e Optical elements, devices, and systems

Ultraviolet stimulated Raman scattering in multimode silica fibers pumped with excimer lasers

Roberto Pini, Marina Mazzoni, Renzo Salimbeni, Manlio Matera, and Chinlon Lin

Appl. Phys. Lett. 43, 6 (1983); http://dx.doi.org/10.1063/1.94124 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Efficient ultraviolet frequency conversion by stimulated Raman scattering in multimode silica glass fibers is reported. Two orders of stimulated Raman scattering have been obtained in the 313–358‐nm spectral region pumping with the near ultraviolet emission lines of excimer lasers.
Show PACS
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.81.-i Fiber optics

Preparation of 1.78‐μm wavelength Al0.2Ga0.8Sb/GaSb double‐heterostructure lasers by molecular beam epitaxy

W. T. Tsang and N. A. Olsson

Appl. Phys. Lett. 43, 8 (1983); http://dx.doi.org/10.1063/1.94132 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
As the losses due to Rayleigh scattering decrease at a rate of λ4 with increasing wavelength λ, the future generation of optical fibers, light sources, and detectors may well be operating at still longer wavelength beyond 1.55 μm. The present letter reports the first preparation of Al0.2Ga0.8Sb/GaSb double‐heterostructure (DH) lasers by molecular beam epitaxy (MBE) operating at 1.78 μm. For AlxGa1−xSb with x≲0.1, room‐temperature photoluminescent intensity and linewidth similar to those of bulk GaSb substrate of similar carrier concentration were obtained. The Al0.2Ga0.8Sb/GaSb DH laser wafers grown by MBE have smooth, featureless, mirror‐reflecting surfaces. Reflection high‐energy electron diffraction study shows that the abrupt Al0.2Ga0.8Sb/GaSb interfaces were atomically smooth. Initial threshold current measurements gave a pulsed threshold current density of 3.4 kA/cm2 for a diode of 380×200 μm and an active GaSb layer of 0.33 μm.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Beam‐propagation analysis of stripe‐geometry semiconductor lasers: Threshold behavior

G. P. Agrawal, W. B. Joyce, R. W. Dixon, and M. Lax

Appl. Phys. Lett. 43, 11 (1983); http://dx.doi.org/10.1063/1.94138 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The axial and lateral variations of the optical mode and carrier‐density profiles of a gain‐guided double‐heterostructure stripe‐geometry semiconductor laser are analyzed theoretically using a beam‐propagation method based on the fast Fourier transform technique. The numerical results near the laser threshold indicate that the characteristic length lc, over which the lateral mode adjusts itself to small axial variations in the laser structure, is typically in the range 50 μm≲lc≲100 μm.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Periodic window, period doubling, and chaos in a liquid crystal bistable optical device

Jae‐Won Song, Hai‐Young Lee, Sang‐Yung Shin, and Young‐Se Kwon

Appl. Phys. Lett. 43, 14 (1983); http://dx.doi.org/10.1063/1.94150 (3 pages)

Full Text: | Download PDF

Show Abstract
A number of periodic windows, i.e., 3, 4, 5, and 7T (T means a period), as well as period doublings up to 4T and chaos, have been observed in a twisted nematic liquid crystal bistable optical device with a delayed feedback. Universal‐sequence patterns were confirmed in the observed waveforms. A computer simulation based upon a simple broken‐linear modeling of the modulator transmission characteristics shows period doublings, periodic windows, and period mergings. It also exhibits reasonable agreement with the experiment.
Show PACS
42.65.-k Nonlinear optics
42.79.Hp Optical processors, correlators, and modulators
61.30.-v Liquid crystals

Optical pulse compression by nonlinear coupling

Ken‐ichi Kitayama and Shyh Wang

Appl. Phys. Lett. 43, 17 (1983); http://dx.doi.org/10.1063/1.94151 (3 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
Nonlinear coupled waveguide is studied for optical pulse compression, utilizing the power‐dependent performance of such waveguides caused by the intensity‐dependent refractive index in the region of interaction. Theoretical calculations predict that the pulse compression to less than 1/5 of the original pulse width is achievable with a loss of 3 dB.
Show PACS
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Fabrication of periodic Ti:LiNbO3 waveguides by single and double diffusion

Alfredo Yi‐Yan, I. Andonovic, E. Y. B. Pun, and B. Bjortorp

Appl. Phys. Lett. 43, 19 (1983); http://dx.doi.org/10.1063/1.94152 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Periodic index waveguides have been successfully fabricated by diffusing a 200‐Å‐thick titanium film containing a grating pattern into Y‐cut LiNbO3 substrates. Bragg deflectors with efficiencies of up to 64% have been demonstrated in devices having a grating length of 750 μm and a diffusion time of 3 h. Similar devices have also been fabricated using a double‐diffusion process to obtain high grating efficiencies in deeper waveguide layers. A deflection efficiency of 60% has been measured for a device having a total diffusion time of 11 h. While the diffusion of Ti gratings also leads to the formation of a surface corrugation on the waveguides, no increase in random scattering has been observed in the periodic region. The novel method of double diffusion could prove very useful in future integration of optical devices on a single LiNbO3 substrate.
Show PACS
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Electro‐optic analog‐to‐digital converter using channel waveguide Fabry–Perot modulator array

C. L. Chang and C. S. Tsai

Appl. Phys. Lett. 43, 22 (1983); http://dx.doi.org/10.1063/1.94154 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A new electro‐optic analog‐to‐digital converter that makes use of an array of channel waveguide Fabry–Perot modulators is reported. Since this converter utilizes only straight channel waveguides, it should possess the inherent advantages of small substrate size, simple geometrical layout, and low optical insertion loss. Experimental results obtained with a four‐bit converter in a X‐cut LiNbO3 substrate have demonstrated some of these desirable features.
Show PACS
78.20.Jq Electro-optical effects
84.30.Sk Pulse and digital circuits

Continuously operated visible‐light‐emitting lasers using liquid‐phase‐epitaxial InGaPAs grown on GaAs substrates

S. Mukai, H. Yajima, Y. Mitsuhashi, J. Shimada, and N. Kutsuwada

Appl. Phys. Lett. 43, 24 (1983); http://dx.doi.org/10.1063/1.94155 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Continuously operated visible‐light‐emitting InGaPAs lasers are fabricated using liquid‐phase‐epitaxial wafers grown on a GaAs substrate. The wavelength is 785 nm. The lowest threshold current is 80 mA (6 kA/cm2 in current density). The highest quantum efficiency is 33%. The characteristic temperature is 135 K. The InGaPAs lasers free from dark line defects are presumably grown on GaAs.
Show PACS
42.55.Px Semiconductor lasers; laser diodes

Laser writing of discontinuous metal films

V. B. Jipson, H. N. Lynt, and J. F. Graczyk

Appl. Phys. Lett. 43, 27 (1983); http://dx.doi.org/10.1063/1.94156 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Discontinuous films of noble metals formed by thin‐film nucleation demonstrate attractive properties for optical storage applications. Writing energies lower than those for more conventional tellurium based systems have been achieved using 2.0–3.0‐nm gold layers in a trilayer configuration. The discontinuous nature of the film is shown to greatly influence the writing characteristics of these films. This is due to the fact that written spots are now formed through laser induced sintering of the small metallic islands, rather than by film ablation that occurs for continuous films.
Show PACS
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
81.40.Tv Optical and dielectric properties related to treatment conditions
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Electrical and optical properties of ion‐irradiated organic polymer Kapton H

Tatsumi Hioki, Shoji Noda, Masahiro Sugiura, Mitsutaka Kakeno, Kenichi Yamada, and Junichi Kawamoto

Appl. Phys. Lett. 43, 30 (1983); http://dx.doi.org/10.1063/1.94157 (3 pages) | Cited 43 times

Full Text: | Download PDF

Show Abstract
An organic polymer Kapton H film was irradiated with high‐energy (∼MeV) N+2 ions. The specific resistivity of the film irradiated to a dose ∼1017 N/cm2 was estimated to be ∼10−2 Ω cm, which is about 20 orders of magnitude smaller than that of the unirradiated film. With increase of dose, the irradiated region of the film became grayish silver with a remarkable metallic luster. It is suggested that the alterations of the electrical and optical properties of the film result from the decomposition and the subsequent carbonization of the polymer induced by ion irradiation. The properties of the irradiated film are compared with those of the pyrolyzed one.
Show PACS
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Optically pumped cw semiconductor ring laser

A. Fuchs, D. Bebelaar, and M. M. Salour

Appl. Phys. Lett. 43, 32 (1983); http://dx.doi.org/10.1063/1.94158 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We report the first optically pumped semiconductor laser operating in a ring cavity configuration. Output powers of more than 40 mW have been achieved from a CdS platelet optically pumped by an Ar+ laser at 476 nm. Tunability of the laser output was demonstrated from 493–502 nm using an intracavity prism and temperature tuning.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Vacuum ultraviolet fluorescence of helium in bubbles in aluminum and tin

S. E. Donnelly, A. A. Lucas, and J. C. Rife

Appl. Phys. Lett. 43, 35 (1983); http://dx.doi.org/10.1063/1.94159 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Vacuum ultraviolet fluorescence is observed from high density helium (up to three times liquid density) in microbubbles in implanted aluminum and tin. The fluorescence is excited by bombardment with low‐energy electrons (<5 keV). The resulting spectra are attributed to a combination of excimer (higher wavelength) and atomic (lower wavelength) fluorescences. The efficiency of the process is such that it has recently been proposed for the construction of a new solid state vacuum ultraviolet photon source.
Show PACS
78.40.Dw Liquids
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects

1‐W cw Zn ion laser

J. J. Rocca, J. D. Meyer, and G. J. Collins

Appl. Phys. Lett. 43, 37 (1983); http://dx.doi.org/10.1063/1.94160 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We have obtained 1.2 W of cw laser power on the 4911.6‐ and 4924.0‐Å transitions of Zn II by exciting a He‐Zn gas mixture with a dc glow discharge electron beam. In addition, 0.25‐W output power has been obtained on the 6149.9‐Å line of Hg+ using the same excitation scheme. The combination of electron beam ionization of rare gas atoms and subsequent charge transfer excitation to metal ion levels is shown to have the potential of significantly increasing the efficiency of ion lasers. cw multiwatt visible and ultraviolet ion lasers operating at efficiencies >10−3 appear feasible using this excitation scheme.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Optical gain in GaAs doping superlattices

H. Jung, G. H. Döhler, E. O. Göbel, and K. Ploog

Appl. Phys. Lett. 43, 40 (1983); http://dx.doi.org/10.1063/1.94161 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The first optical gain measurements have been performed on GaAs doping superlattices grown by molecular beam epitaxy. A maximum gain of 300 cm−1 is obtained in the layered material at a photon energy of 1.35 eV using an excitation density of only 20 W cm−2. Due to the unique tunable energy gap of doping superlattices, the stimulated emission occurs at photon energies far below the gap of bulk GaAs and can be shifted by appropriate choice of the excitation density. Thus, a strong shift of the energetic position of the gain spectra to 1.40 eV with an increased gain of 400 cm−1 is observed when the excitation density is increased to 500 W cm−2.
Show PACS
78.45.+h Stimulated emission
78.40.Fy Semiconductors
75.20.Ck Nonmetals
78.55.-m Photoluminescence, properties and materials

Amplification of sound by conduction electrons in a piezoelectric superlattice

J. B. Ketterson and G. K. Wong

Appl. Phys. Lett. 43, 43 (1983); http://dx.doi.org/10.1063/1.94162 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
It is shown that the amplification coefficient of sound with a wave vector corresponding to a Brillouin zone edge of a superlattice structure containing at least one piezoelectric component is resonantly enhanced with respect to other wave vectors in the presence of an electron drift velocity which exceeds the sound velocity.
Show PACS
43.60.+d Acoustic signal processing

Energy leakage from Rayleigh waves on a fluid‐loaded, layered half‐space

D. E. Chimenti

Appl. Phys. Lett. 43, 46 (1983); http://dx.doi.org/10.1063/1.94163 (2 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The dispersive energy leakage rate of the zeroth‐order leaky Rayleigh mode on a fluid‐loaded, layered half‐space has been determined experimentally for the first time. Data are presented for a layer of copper on stainless steel and are compared to the prediction of a recent theoretical model. Good agreement with the model calculation is seen in the magnitude of the energy leakage rate, which is related to the lateral displacement of a finite beam, and its dependence on the layer thickness over acoustic wavelength. The rapid variation observed in this rate may be relevant to the design of layer thickness measurements in the acoustic microscope.
Show PACS
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Pt Surface waves in solids and liquids
43.20.Fn Scattering of acoustic waves

Wide‐band monolithic GaAs convolver and memory correlator

M. R. Melloch and R. S. Wagers

Appl. Phys. Lett. 43, 48 (1983); http://dx.doi.org/10.1063/1.94164 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Experimental results for a monolithic GaAs convolver and memory correlator of time bandwidth 660 are reported. The device was fabricated on a semi‐insulating GaAs substrate and ion implantation was used to define the 5.5‐μs‐long Schottky diode region. The interdigital transducers were chirped to provide a 120‐MHz bandwidth at a center frequency of 300 MHz. With an untuned two‐port insertion loss of 67.6 dB, an external convolution efficiency of –107 dBm and an external memory correlation efficiency of –120 dBm were obtained. Convolution and memory correlation with a 95‐MHz chipping rate, 511 chip long, spread spectrum waveform are also demonstrated.
Show PACS
43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

High coupling and high velocity surface acoustic waves using a c‐axis oriented ZnO film on translucent Al2O3 ceramics

Fumio Takeda, Tadashi Shiosaki, and Akira Kawabata

Appl. Phys. Lett. 43, 51 (1983); http://dx.doi.org/10.1063/1.94137 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The layered structure comprising a c‐axis normally oriented ZnO piezoelectric film and a translucent Al2O3 ceramic substrate which has a high surface‐acoustic‐wave velocity and a small surface roughness has given both a high phase velocity Vp and a high coupling k2 for the 0th (Rayleigh) mode, 1st (Sezawa) mode, and leaky mode surface acoustic waves. The measured maximum values of k2 are 3.6% for the 0th mode at h/λ=0.45 where Vp is 3.2 km/s, 5.7% for the 1st mode at h/λ=0.21 where Vp is 5.6 km/s, and 6.7% for the leaky mode at h/λ=0.16 where Vp is 6.2 km/s, where the interdigital transducers are located at the interface in measuring the above values, and also electrically floating plane metals are on top of the ZnO film for the last two values.
Show PACS
43.38.Fx Piezoelectric and ferroelectric transducers
77.65.-j Piezoelectricity and electromechanical effects
81.15.Cd Deposition by sputtering
84.30.Vn Filters

Laser plasma coupling in long pulse, long scale length plasmas

E. M. Campbell, M. D. Rosen, D. W. Phillion, R. H. Price, K. Estabrook, B. F. Lasinski, S. P. Obenschain, E. A. Mclean, R. R. Whitlock, and B. H. Ripin

Appl. Phys. Lett. 43, 54 (1983); http://dx.doi.org/10.1063/1.94118 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Laser plasma coupling under near reactor‐size target conditions is studied at Iλ2≂1014 W/cm2 μm2 with 1‐mm size plasmas, 3‐kJ, 3‐ns irradiations on the 1.064‐μm Shiva laser. Evidence for the occurrence of parametric processes, such as stimulated Brillouin sidescatter and the two‐plasmon decay instability, is observed.
Show PACS
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

An applied voltage to eliminate current transients in a one‐dimensional diode

Michael Lampel and Michael Tiefenback

Appl. Phys. Lett. 43, 57 (1983); http://dx.doi.org/10.1063/1.94119 (2 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Development of sources for heavy ion fusion motivates study of diode current transients. For the one‐dimensional problem a unique applied voltage eliminates transients in the space‐charge‐dominated case:V(t)=V[4/3 (t/τ)−1/3 (t/τ)4] for t<τ, V(t)=V for t≥τ, where L is diode length, V is steady state diode potential, q/m is charge to mass ratio, and τ=3L(m/2qV)1/2 is a particle transit time through the diode. We derive this result and compare it to computer simulations and experimental results.
Show PACS
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
41.75.Fr Electron and positron beams

X‐ray evidence for a terraced GaAs/AlAs superlattice

D. A. Neumann, H. Zabel, and H. Morkoç

Appl. Phys. Lett. 43, 59 (1983); http://dx.doi.org/10.1063/1.94120 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
We report an x‐ray diffraction study of a GaAs/AlAs superlattice, showing satellite reflections which lie on a line making a constant, nonzero angle with the [00L] reciprocal lattice rod containing the fundamental reflections. The results indicate a terraced superlattice structure in which the chemical modulation of the GaAs/AlAs layers is tilted with respect to the (001) lattice planes. This tilt imposes a reduced lateral domain size on the superlattice, which can be deduced from the angular widths of the satellite reflections.
Show PACS
68.55.-a Thin film structure and morphology
61.05.cc Theories of x-ray diffraction and scattering

Determination of the anisotropic potential at the nematic liquid crystal‐to‐wall interface

K. H. Yang and Charles Rosenblatt

Appl. Phys. Lett. 43, 62 (1983); http://dx.doi.org/10.1063/1.94121 (3 pages) | Cited 84 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The integrated birefringence of a surfactant (C16H33NH2)‐aligned methoxybenzylidene butylaniline cell as a function of applied magnetic field (up to 100 kG) has been measured. The Oseen and Frank elastic continuum theory and a generalized torque balance equation at the interface have been utilized for the calculation to fit the measured data. A very good fit to the data was obtained using an anisotropic liquid crystal‐to‐wall interfacial potential of the form C cos2 θ+C4 cos4 θ for the calculation. It was found that C4/C=−0.38.
Show PACS
61.30.Cz Molecular and microscopic models and theories of liquid crystal structure

Cross section for photoelectron capture by IrBr3−6 in AgBr

R. J. Deri and J. P. Spoonhower

Appl. Phys. Lett. 43, 65 (1983); http://dx.doi.org/10.1063/1.94122 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The lifetime of photogenerated electrons in AgBr crystals doped with trivalent iridium ions was determined from photoconductivity measurements. A first‐order electron decay process occurs at Ir3+ sites, with a room‐temperature photoelectron lifetime of 13–150 ps for materials with 89–4 ppm of dopant. A cross section of 26±5 Å2 was deduced for photoelectron capture by IrBr3−6 centers.
Show PACS
71.55.-i Impurity and defect levels
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close