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15 Nov 1983

Volume 43, Issue 10, pp. 889-980

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Stable longitudinal mode operation in a multiple twisted double‐heterostructure laser

Takashi Sugino and Shyh Wang

Appl. Phys. Lett. 43, 889 (1983); http://dx.doi.org/10.1063/1.94194 (3 pages) | Cited 2 times

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A multiple twisted double‐heterostructure laser is fabricated by connecting a terraced substrate laser and a channeled substrate laser alternately. In addition to a stable tranverse‐mode oscillation due to the built‐in refractive index variation, a stable longitudinal‐mode oscillation is achieved by interferometric effects which are caused by internal reflection at twisted parts of the composite cavity where transition in the laser structure occurs. The laser with two twisted regions shows a threshold current of 92 mA, and wavelength locking over a temperature range of more than 25 °C within which the wavelength changes at a rate of 0.6 Å/ °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Intensity‐dependent index of refraction in multilayers of polydiacetylene

G. M. Carter, Y. J. Chen, and S. K. Tripathy

Appl. Phys. Lett. 43, 891 (1983); http://dx.doi.org/10.1063/1.94195 (3 pages) | Cited 62 times

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We have grown multilayer samples of a polydiacetylene upon a metallized grating forming a planar waveguide structure. By measuring the change with optical intensity in the coupling angle between an input laser beam and a planar waveguide mode in the structure we estimate the intensity‐dependent index of refraction, n2≂10−6 (MW/cm2)−1 (λ>7500 Å), for the polydiacetylene. Also, a large resonant enhancement of the optical nonlinearity was observed.
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75.20.Ck Nonmetals
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Low loss waveguides grown on GaAs using localized vapor phase epitaxy

M. Erman, N. Vodjdani, J. B. Theeten, and J. P. Cabanié

Appl. Phys. Lett. 43, 894 (1983); http://dx.doi.org/10.1063/1.94196 (2 pages) | Cited 7 times

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New type of optical waveguides grown on GaAs by localized epitaxy using vapor phase epitaxy is presented. The guides are grown through a strip opened in a dielectric film and have a triangular cross section. The loss measurements have been performed on waveguides of lengths varying from 1 to 10 mm. Losses as low as 1.5 dB have been found. An original light coupling technique into the guide—through the substrate—has been used. Because of an improved optical confinement due to the structure of the guides and because of their low losses, these waveguides have numerous potential advantages and applications in integrated optics.
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42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films

Optical fiber loss increase in the infrared wavelength region induced by electric current

Yasuji Murakami, Naoshi Uesugi, Kazuhiro Noguchi, and Yutaka Mitsunaga

Appl. Phys. Lett. 43, 896 (1983); http://dx.doi.org/10.1063/1.94197 (2 pages)

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A new phenomenon of silica‐fiber loss increase, which is induced by an electric current applied in water, is reported. It is found from experimental results that the loss increase is caused by hydrogen gas, which is electrolytically produced and is diffused into the fiber interstitially.
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42.81.-i Fiber optics
42.25.Lc Birefringence

B→X transition in 136Xe 19F

Patricia C. Tellinghuisen and Joel Tellinghuisen

Appl. Phys. Lett. 43, 898 (1983); http://dx.doi.org/10.1063/1.94198 (3 pages) | Cited 11 times

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The B→X emission spectrum is analyzed for the single isotopomer 136Xe 19F. Thirteen v′‐v″ bands spanning v′=0–4 and v″=0–5 have been rotationally analyzed. The analysis yields greatly improved spectroscopic constants, permitting precise identification of most of the features in the XeF laser spectrum. No evidence is found for C→X emission in the normal sense. However, it is possible that several previously unassigned features, including one or more reported laser lines, constitute C→X emission enabled through intensity borrowing from B‐X by B‐C perturbative mixing.
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33.20.Kf Visible spectra
33.70.-w Intensities and shapes of molecular spectral lines and bands
33.15.Mt Rotation, vibration, and vibration-rotation constants
33.15.Pw Fine and hyperfine structure

Infrared transparent and electrically conductive thin film of In2O3

Tze‐chiang Chen, Tso‐ping Ma, and Richard C. Barker

Appl. Phys. Lett. 43, 901 (1983); http://dx.doi.org/10.1063/1.94199 (3 pages) | Cited 4 times

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High quality infrared (1–12 μ) transparent and electrically conductive thin films based on thermal reactively evaporated In2O3 have been developed. Optical constants of these films have been obtained by the use of an iteration technique, which involves the formulas for multiple transmission and reflection. The details of the film deposition process and the theoretical foundation leading to its development are discussed in this letter. It has been found that the transparency and conductivity of these films are primarily due to their high electron mobility coupled with an appropriate electron concentration. A multilayer design of a bandpass induced transmission and antireflection coating has been developed and implemented on ZnS and ZnSe substrates for the wavelength range of 8–12 μ. Typical transmittance of 65%–80% with a film sheet resistance of 20–50 Ω/☒ has been achieved. Such a design is applicable to forward‐looking infrared systems where a window having both high electromagnetic (rf and microwave) shielding effectiveness and good infrared transparency are required. The properties of these films lend themselves to many other potential applications.
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75.20.Ck Nonmetals
73.61.Ng Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Monolithic high‐power dual‐wavelength GaAlAs laser array

M. Wada, K. Hamada, H. Shimizu, M. Kume, F. Tajiri, K. Itoh, and G. Kano

Appl. Phys. Lett. 43, 903 (1983); http://dx.doi.org/10.1063/1.94174 (3 pages) | Cited 1 time

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Monolithic integration of high‐power GaAlAs lasers is demonstrated. The new dual‐wavelength laser array is implemented by integrating a twin‐ridge substrate laser and a terraced substrate laser by the one‐step liquid phase epitaxy technique. Both lasers integrated on a GaAs chip continuously operated at the power output as high as (30+30) mW in single longitudinal modes with a wavelength separation of 31 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.60.By Design of specific laser systems
68.55.-a Thin film structure and morphology

Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor

M. A. DiGiuseppe, H. Temkin, L. Peticolas, and W. A. Bonner

Appl. Phys. Lett. 43, 906 (1983); http://dx.doi.org/10.1063/1.94175 (3 pages) | Cited 22 times

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A computer controlled multiple chamber chemical vapor deposition reactor, designed for the growth of InP based alloys, has been constructed. In this system, specular epitaxial layers of InP and In0.53Ga0.47As are grown in separate chambers. This allows for the uninterrupted growth of In0.53Ga0.47As/InP quantum well structures with layer thicknesses of approximately 150 Å. The photoluminescence spectra of these structures exhibit upward energy shifts as large as 71 meV from the band‐gap energy of In0.53Ga0.47As. Laser action at 1.5–1.6‐μm wavelengths has been obtained at temperatures up to 100 °C by optical pumping with a Q‐switched neodymium:yttrium aluminum garnet laser.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.40.Fy Semiconductors
42.55.Px Semiconductor lasers; laser diodes

Observation of optically induced molecular reorientation in films of smectic C liquid crystals

P. H. Lippel and C. Y. Young

Appl. Phys. Lett. 43, 909 (1983); http://dx.doi.org/10.1063/1.94176 (3 pages) | Cited 7 times

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A linearly polarized laser beam incident on a freely suspended film of a smectic C liquid crystal has been observed to reorient the molecules. In films of 4, 4 bis (heptyloxy) azoxybenzene, large reorientations have been observed with an incident optical power of less than 50 mW. Photographs are presented showing the change in molecular orientation as the incident polarization is rotated. A simple theory explaining the effect is also included.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
79.20.Ds Laser-beam impact phenomena
78.20.Jq Electro-optical effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Cascade laser emission of optically pumped Na2 molecules

B. Wellegehausen, W. Luhs, A. Topouzkhanian, and J. d’Incan

Appl. Phys. Lett. 43, 912 (1983); http://dx.doi.org/10.1063/1.94177 (3 pages) | Cited 9 times

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First continuous laser oscillation at wavelengths around 2.5 μm and 1.9 μm/0.9 μm on C 1πu →(3) 1Σ+g →B 1πu/A 1Σ+u cascade transitions of Na2 has been obtained. The C 1πu state is optically pumped with cw krypton and argon ion lasers at wavelengths in the range of 333–351 nm. Gain contributions due to coherent two‐photon and three‐photon processes are involved.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Be Level crossing and optical pumping
33.50.Dq Fluorescence and phosphorescence spectra

Low reflectivity surface acoustic wave transducers on GaAs

T. W. Grudkowski and G. K. Montress

Appl. Phys. Lett. 43, 915 (1983); http://dx.doi.org/10.1063/1.94178 (2 pages) | Cited 1 time

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Experimental results are presented for fabrication and metallization techniques which achieve low reflectivity surface acoustic wave (SAW) interdigital transducer operation on GaAs. The transducer structures considered are single finger pair, quarter wavelength designs with chrome/aluminum/chrome (surface), aluminum (recessed) or gold‐germanium/nickel/gold (surface) metallized electrodes which were fabricated directly onto a semi‐insulating GaAs substrate. Triple transit signal suppression greater than 53 dB for the recessed aluminum metallization and greater than 62 dB for the Au‐Ge/Ni/Au metallization has been achieved for test transducers operating at 159 MHz, compared to typically 30–35 dB for Cr/Al/Cr metallizations. These low reflectivity transducers provide the means for reducing spurious signal responses within monolithic programmable GaAs signal processors and for achieving higher Q performance of SAW resonator filters fabricated on GaAs substrates.
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43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects
72.80.Ey III-V and II-VI semiconductors
43.38.Gy Semiconductor transducers

Generation and detection of ultrasonic Lamb waves in a thin deposited film by using interdigital transducers

Kiyohiko Uozumi, Kaoru Ohsone, and Richard M. White

Appl. Phys. Lett. 43, 917 (1983); http://dx.doi.org/10.1063/1.94179 (3 pages) | Cited 7 times

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Interdigital transducers (IDT’s) have been used to generate and detect ultrasonic Lamb waves in a composite Cu(3 μm)‐ZnO (0.45 μm) film that is much thinner than the acoustic wavelength in a bulk material. rf pulses of 29.0 and 1.31 MHz are applied to one of the pair of IDT’s with 140‐μm period, giving rise to a nondispersive quasi‐symmetric mode of phase velocity 4170 m/s and a dispersive quasi‐antisymmetric mode having a phase velocity of 184 m/s and a group velocity of 362 m/s, respectively. Possible applications to electronic signal processing and material studies are described.
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43.35.Ns Acoustical properties of thin films
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.40.Dx Vibrations of membranes and plates
68.60.-p Physical properties of thin films, nonelectronic

Measurements of plasma ion temperature and rotation velocity using the He II 4686‐Å line produced by charge transfer

R. J. Groebner, N. H. Brooks, K. H. Burrell, and L. Rottler

Appl. Phys. Lett. 43, 920 (1983); http://dx.doi.org/10.1063/1.94180 (3 pages) | Cited 45 times

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Spatially and temporally resolved values of the ion temperature and toroidal rotation velocity near the plasma axis have been obtained in neutral beam‐heated plasmas in the Doublet III tokamak from measurements of the Doppler broadening and Doppler shift of the He II 4686‐Å line, excited by charge transfer reactions between fast hydrogen atoms in the beam and thermal helium ions in the plasma. The measurement technique, which uses visible optics and a multichannel detector, promises to be a straightforward method to obtain ion temperature profiles in beam‐heated tokamaks.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
34.70.+e Charge transfer
52.55.Fa Tokamaks, spherical tokamaks
52.55.Hc Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices

Breakdown of the atmosphere by emission from a millimeter‐wave free‐electron maser

S. H. Gold, W. M. Black, V. L. Granatstein, and A. K. Kinkead

Appl. Phys. Lett. 43, 922 (1983); http://dx.doi.org/10.1063/1.94181 (3 pages) | Cited 3 times

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Production of an atmospheric pressure air breakdown plasma using the emission from a short‐pulse millimeter‐wave free‐electron maser is used to demonstrate frequency tunability over the range 50–100 GHz, via breakdown standing wave patterns, and very high peak power.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
41.75.Fr Electron and positron beams
52.80.Pi High-frequency and RF discharges
42.68.Wt Remote sensing; LIDAR and adaptive systems

Effects of implantation energy and carbon concentration on the friction and wear of titanium‐implanted steel

I. L. Singer and R. A. Jeffries

Appl. Phys. Lett. 43, 925 (1983); http://dx.doi.org/10.1063/1.94182 (3 pages) | Cited 23 times

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Dry sliding friction and wear measurements were used to evaluate two implantation processes which increase the C concentration in Ti‐implanted steels. In the first process, Ti ions were implanted at a low energy (50 keV) in order to enhance the efficiency of vacuum carburization over what is achievable at higher energies (e.g., 190 keV). In the second, a dual implantation process, C ions were implanted into steels already implanted with Ti ions at high energy (190 keV). The first process produced a low friction (μ=0.3), scuff resistant surface at a fluence of 2×1017/cm2, 40% lower than the fluence required for similar behavior by 190‐keV implants. At fluences of 2×1017/cm2 each, the dual implantation produced a modest decrease in friction (μ=0.5), accompanied by stick slip, and some wear resistance compared to nonimplanted steel (μ=0.6). Auger spectroscopy and energy‐dispersive x‐ray analysis were used to analyze the surface composition produced by the two processes at fluences of 2×1017/cm2. The dual implanted surface had more Ti, more C, and a greater C/Ti ratio than the low‐energy implanted surface. The latter, however, had more C derived from vacuum carburization than the dual implanted surface. Both processes resulted in identical surface C concentrations. We concluded, therefore, that the improved tribological surface of Ti‐implanted steel results from vacuum carburization and not just the presence of excess C.
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61.72.U- Doping and impurity implantation
81.40.Pq Friction, lubrication, and wear
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
61.50.Nw Crystal stoichiometry

Conditions for metastable thermal and magnetic domain structures and for observable oscillations in dρ/dT near an electrothermal instability

M. Ausloos, J. B. Sousa, M. M. Amado, and R. P. Pinto

Appl. Phys. Lett. 43, 927 (1983); http://dx.doi.org/10.1063/1.94183 (3 pages) | Cited 2 times

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Experimental conditions for observing a new type of oscillations in the temperature derivative of the electrical resistivity near magnetic transition temperatures are discussed. An electrothermal instability arises due to a nonlinear electrical current‐voltage drop characteristics as in a ballast resistor. Inhomogeneous temperature distributions are found for various experimental conditions.
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72.15.Jf Thermoelectric and thermomagnetic effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
64.60.My Metastable phases
05.70.Ln Nonequilibrium and irreversible thermodynamics

Ion channeling studies of InGaAs/GaAs strained‐layer superlattices

S. T. Picraux, L. R. Dawson, G. C. Osbourn, and W. K. Chu

Appl. Phys. Lett. 43, 930 (1983); http://dx.doi.org/10.1063/1.94184 (3 pages) | Cited 20 times

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The first ion channeling studies of the InxGa1−xAs/GaAs strained‐layer superlattice (SLS) system are reported. The strong orientation dependence of the dechanneling for both axial and planar directions relative to the [100] growth axis indicates that the ≊1% lattice mismatch is accommodated by lattice strain. Tetragonal distortions along the growth direction give rise to alternating tilts for inclined crystal directions which result in significant [110] and (110) dechanneling. Measurements for 40‐layer structures with different In concentrations demonstrate that the channeling technique is a depth‐sensitive probe of the degree of strain in SLS systems.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Pyroelectric properties of the alanine and arsenic‐doped triglycine sulfate single crystals

A. S. Bhalla, C. S. Fang, Y. Xi, and L. E. Cross

Appl. Phys. Lett. 43, 932 (1983); http://dx.doi.org/10.1063/1.94185 (3 pages) | Cited 20 times

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Arsenic‐doped triglycine sulfate single crystals show an enhancement in pyroelectric coefficients and the pyroelectric figures of merit p/K and p/√K by a factor of 2.2 over those of pure triglycine sulfate single crystals at the most desirable operating temperature of the pyroelectric sensors, ≂25 °C. The crystals are inexpensive to produce and show useful pyroelectric properties.
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77.70.+a Pyroelectric and electrocaloric effects
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity

Synthesis of novel inorganic films by ion beam irradiation of polymer films

T. Venkatesan, T. Wolf, D. Allara, B. J. Wilkens, and G. N. Taylor

Appl. Phys. Lett. 43, 934 (1983); http://dx.doi.org/10.1063/1.94186 (3 pages) | Cited 19 times

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We propose a novel technique to convert polymer films into useful inorganic films by ion beam irradiation. Along the track of an ion the polymer is dissociated into smaller fragments. Volatile fragments diffuse through the film and escape. Any element which is not removed in the form of volatile species is subsequently enriched with respect to the other elements. We demonstrate this effect in a polymer poly(dimethylsilylene‐co‐methylphenylsilylene), which initially has a C:Si ratio of 4.5:1. Upon irradiation with 2‐MeV Ar+ ions at a dose of 1015 ions/cm2 the C:Si ratio changes to 3.4:1 as verified by Rutherford backscattering spectrometry. We believe that the effect of the ion beam irradiation is to produce more Si–C bonds at the expense of the C–H and Si–Si bonds, with ≲10% of the original hydrogen being present in the film at high doses. The IR spectra of the film as a function of the irradiation dose show a progressive loss of fine molecular features with significant increase of the refractive index. The IR spectrum at the high doses appears to be due to a mixture of various Si and C bonds. However, the irradiated films are very hard and scratch resistant (knoop value ≳1300), suggesting an increase in the number of silicon carbide bonds.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments

Silicon self‐interstitial supersaturation during phosphorus diffusion

R. M. Harris and D. A. Antoniadis

Appl. Phys. Lett. 43, 937 (1983); http://dx.doi.org/10.1063/1.94187 (3 pages) | Cited 38 times

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The effect of phosphorus introduction and diffusion on the diffusivities of boron, arsenic, and antimony in silicon was studied using arsenic and antimony buried layers in a boron‐doped silicon substrate. It was found that the diffusivity of boron and arsenic was enhanced, while that of antimony was retarded directly under the silicon surface exposed to phosphorus. Since antimony diffuses primarily via a vacancy mechanism while the other two elements via a combination of vacancy and interstitialcy mechanisms, these results suggest that phosphorus predeposition enhances the silicon self‐interstitial concentration and reduces the concentration of vacancies.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.jd Vacancies
61.72.jj Interstitials

Impact ionization near GaAs grain boundaries

G. E. Pike, P. L. Gourley, and S. R. Kurtz

Appl. Phys. Lett. 43, 939 (1983); http://dx.doi.org/10.1063/1.94188 (3 pages) | Cited 7 times

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Electroluminescence from a GaAs bicrystal has been measured at high current densities, and gives direct evidence of impact ionization near the grain boundary. Negative differential capacitance is seen at lower current densities and is associated with barrier height modulation by minority carriers.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.-c Electronic transport in interface structures
78.60.Fi Electroluminescence
61.72.Mm Grain and twin boundaries

Hg vacancy related lifetime in Hg0.68Cd0.32Te by optical modulation spectroscopy

D. L. Polla, R. L. Aggarwal, D. A. Nelson, J. F. Shanley, and M. B. Reine

Appl. Phys. Lett. 43, 941 (1983); http://dx.doi.org/10.1063/1.94189 (3 pages) | Cited 15 times

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The lifetime of excess photogenerated carriers has been measured as a function of temperature and carrier concentration in p‐type Hg0.68Cd0.32Te by contactless optical modulation spectroscopy. An excess carrier lifetime related to impurity substitution on ionized Hg sites is suggested as the dominant Shockley–Read recombination mechanism observed in this material.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
07.60.Rd Visible and ultraviolet spectrometers

1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann

Appl. Phys. Lett. 43, 943 (1983); http://dx.doi.org/10.1063/1.94190 (3 pages) | Cited 341 times

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Well‐resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium‐implanted GaP, GaAs, InP, and Si. The optical transitions occur between the weakly crystal field split spin‐orbit levels, 4I13/2→4I15/2, of Er3+(4f11). Typical spectral linewidths in GaAs are 2 cm−1(0.25 meV) at 6 K and 11 cm−1(1.36 meV) at room temperature.
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78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation
78.30.-j Infrared and Raman spectra

Wafer‐scale laser pantography: Fabrication of n‐metal‐oxide‐semiconductor transistors and small‐scale integrated circuits by direct‐write laser‐induced pyrolytic reactions

Bruce M. McWilliams, Irving P. Herman, Fred Mitlitsky, Roderick A. Hyde, and Lowell L. Wood

Appl. Phys. Lett. 43, 946 (1983); http://dx.doi.org/10.1063/1.94191 (3 pages) | Cited 34 times

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A complete set of processes sufficient for manufacture of n‐metal‐oxide‐semiconductor (n‐MOS) transistors by a laser‐induced direct‐write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n‐doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1‐μm and 1‐μm‐thick gate oxides were micromachined with and without etchant gas, and the exposed p‐Si [100] substrate was cleaned and, at times, etched. Diffusion regions were doped by laser‐induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n‐MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser‐induced surface reactions that have not been reported previously.
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42.62.-b Laser applications
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Optimum emitter grading for heterojunction bipolar transistors

J. R. Hayes, F. Capasso, R. J. Malik, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 43, 949 (1983); http://dx.doi.org/10.1063/1.94192 (3 pages) | Cited 36 times

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A simple procedure has been used to determine the optimum emitter grading for a heterojunction bipolar transistor (ABT). Use of this procedure allows maximum hole confinement in addition to minimum base/emitter turn‐on voltage, leading to a negligible collector/emitter offset voltage, both of which are necessary for high performance devices. By using a parabolic grading function at the emitter/base junction a Np+n Ga0.7Al0.3As/GaAs HBT has been fabricated, using molecular beam epitaxy, with a negligible collector/emitter offset voltage. A similar result can be obtained with a N‐i emitter where the undoped i region is linearly graded.
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85.60.Pg Display systems
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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