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1 Dec 1983

Volume 43, Issue 11, pp. 985-1078

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Photothermal deflection microscopy of dielectric thin films

W. C. Mundy, R. S. Hughes, and C. K. Carniglia

Appl. Phys. Lett. 43, 985 (1983); http://dx.doi.org/10.1063/1.94205 (3 pages) | Cited 4 times

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A system has been developed which employs the photothermal deflection effect to map the absorption characteristics of thin‐film optical coatings used in high‐energy laser applications. The high spatial resolution, low‐level absorption data provided by this system may reveal flaws which could become damage sites when exposed to high‐energy laser radiation. Qualitative data of mappings of areas of the coating in which defects were found which were not observed with Nomarski microscopy are presented. Measurements are in progress to ascertain correlations between the absorption sites and laser induced damage.
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07.60.-j Optical instruments and equipment
42.70.-a Optical materials
75.20.Ck Nonmetals

Room‐temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition

Isao Hino, Akiko Gomyo, Kenichi Kobayashi, Tohru Suzuki, and Katsuhiko Nishida

Appl. Phys. Lett. 43, 987 (1983); http://dx.doi.org/10.1063/1.94206 (3 pages) | Cited 23 times

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Room‐temperature pulsed laser operation of (Al0.3Ga0.7)0.5In0.5P/ Ga0.5In0.5P/ (Al0.3Ga0.7)0.5In0.5P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved for the first time. The lowest threshold current density was 26 kA/cm2 for a diode with a 22‐μm‐wide and 160‐μm‐long stripe. The lasing wavelength was 0.683 μm.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.45.+h Stimulated emission

Equal‐pulse correlation technique for measuring femtosecond excited state relaxation times

A. J. Taylor, D. J. Erskine, and C. L. Tang

Appl. Phys. Lett. 43, 989 (1983); http://dx.doi.org/10.1063/1.94207 (3 pages) | Cited 22 times

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A new technique for measuring extremely fast excited state relaxation times, on the order of or less than the laser pulse width, in the presence of a longer relaxation time is described. The difficulties involved in using the conventional pump‐and‐probe technique and the corresponding advantages of the new technique are illustrated with numerical examples for specific three‐level systems. Qualitative experimental results on semiconductors and organic dye molecules substantiating the results are shown.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques

Photosensitive impregnated porous glass

N. F. Borrelli and D. L. Morse

Appl. Phys. Lett. 43, 992 (1983); http://dx.doi.org/10.1063/1.94208 (2 pages) | Cited 7 times

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Porous glass, impregnated with photosensitive organometallic compounds such as transition metal carbonyls, demonstrates induced optical changes when exposed to light. Both optical absorption and refractive index changes can be induced and are permanent after heating. Examples of high resolution optical patterns produced by this process are shown.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
66.30.J- Diffusion of impurities

Multiline oscillation from a hybrid CO2 laser by cavity length tuning

D. J. Biswas, P. K. Bhadani, A. K. Nath, and U. K. Chatterjee

Appl. Phys. Lett. 43, 994 (1983); http://dx.doi.org/10.1063/1.94209 (2 pages) | Cited 4 times

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A simple method of obtaining multiline oscillation on the P‐branch transitions of the 10.6‐μm band from a hybrid CO2 laser by precisely controlling the cavity length is described. To explain the mechanism of this scheme, theoretical results on multiline oscillation in a hybrid CO2 laser using the rate equation model are presented.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Diode lasers of lead‐europium‐selenide‐telluride grown by molecular beam epitaxy

D. L. Partin

Appl. Phys. Lett. 43, 996 (1983); http://dx.doi.org/10.1063/1.94210 (2 pages) | Cited 15 times

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It is desirable to extend the wavelength coverage of PbSnTe diode lasers to shorter wavelengths (λ<5 μm) and higher operating temperatures. Currently, this range is covered by PbSxSe1−x diode lasers operating below 100 K. Double heterojunction diode lasers have now been fabricated using a new materials system, Pb1−xEuxSeyTe1−y. These structures were grown lattice matched to (100) oriented PbTe substrates by molecular beam epitaxy using PbTe, Eu, Te, PbSe, Tl2Te (p dopant), and Bi2Te3 (n dopant) source ovens. Mesa diodes were fabricated with 20‐μm‐wide stripes using anodic oxide insulation. Diodes have so far been fabricated with up to x=0.010, y=0.011, which operated cw from 4.93 μm (at 30 K) to 4.06 μm (at 136 K). Diodes with x=0.0015, y=0.0020 have operated up to 147 K cw. This is the highest cw operating temperature ever attained with lead‐chalcogenide diode lasers. A wide range of single mode operation with ∼1 mW output power was observed for some of the better diodes. These diodes are useful for ultrahigh resolution spectroscopy, and may be useful in the future for low‐loss, long‐wavelength fiber optics communications.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Jj Ion and electron beam-assisted deposition; ion plating
42.55.Px Semiconductor lasers; laser diodes

17‐GHz bandwidth electro‐optic modulator

C. M. Gee, G. D. Thurmond, and H. W. Yen

Appl. Phys. Lett. 43, 998 (1983); http://dx.doi.org/10.1063/1.94211 (3 pages) | Cited 16 times

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A high‐speed integrated‐optic Ti:LiNbO3 Mach–Zehnder interferometric modulator for 0.83‐μm wavelength operation has been fabricated and characterized. The modulator exhibits smooth, resonance‐free frequency response with a 17‐GHz 3‐dB bandwidth. The modulator has a built‐in phase bias of π/2 for maximum linearity. Complete intensity modulation can be achieved with 120‐mW drive power. Optical modulation was measured up to 18 GHz directly by using a very high‐speed photodiode and indirectly using the swept frequency technique.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics

Effective medium analysis of TeOx optical storage layers

H. Seki

Appl. Phys. Lett. 43, 1000 (1983); http://dx.doi.org/10.1063/1.94221 (3 pages) | Cited 9 times

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The optical properties of Te suboxide type optical memory disk media have been analyzed in terms of the Maxwell Garnett theory of particulate composites. Using the optical indices reported in the literature for amorphous and polycrystalline Te the essential features of the reflectivity spectrum of an optical disc consisting of tellurium suboxide have been simulated. This result supports the interpretation that these suboxide films have extremely fine granular structures. This composite structure has been speculated to be an important factor which enables some of this type of storage medium to repeat numerous amorphous‐crystalline transition cycles.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
75.20.Ck Nonmetals

Single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity lasers

W. T. Tsang, N. A. Olsson, R. A. Logan, J. A. Ditzenberger, I. P. Kaminow, and J.‐S. Ko

Appl. Phys. Lett. 43, 1003 (1983); http://dx.doi.org/10.1063/1.94222 (3 pages) | Cited 10 times

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The single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity (C3) lasers were studied. A high‐speed direct modulation technique for increasing the dynamic range of modulation and for obtaining complete depth of modulation of the optical output power while maintaining single‐frequency operation was proposed and demonstrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Water acoustic microscopy at suboptical wavelengths

B. Hadimioglu and C. F. Quate

Appl. Phys. Lett. 43, 1006 (1983); http://dx.doi.org/10.1063/1.94223 (2 pages) | Cited 23 times

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An acoustic microscope using water as the coupling medium has been operated at frequencies up to 4.4 GHz. The signal‐to‐noise ratio is sufficient for imaging and the acoustic images demonstrate that the resolution is better than 2000 Å when the instrument is operated in the nonlinear regime.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Propagation loss of the acoustic pseudosurface wave on (ZXt)45° GaAs

M. R. Melloch and R. S. Wagers

Appl. Phys. Lett. 43, 1008 (1983); http://dx.doi.org/10.1063/1.94224 (2 pages) | Cited 3 times

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Measurements of propagation loss for the leaky surface acoustic wave on (100)‐cut GaAs with 〈110〉 propagation direction are reported. The measurements were made in the frequency range 200–900 MHz. The propagation loss was determined with a novel technique using a delay line with four interdigital transducers. The effect of a hydrogen implant of dose 1014 cm−2 and energy 120 keV (technique for producing high resistivity isolation regions in GaAs) on propagation loss and macroscopic piezoelecticity are reported.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
77.65.-j Piezoelectricity and electromechanical effects

Collinear investigation of laser initiated reduced density channels

L. D. Horton and R. M. Gilgenbach

Appl. Phys. Lett. 43, 1010 (1983); http://dx.doi.org/10.1063/1.94225 (3 pages) | Cited 5 times

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See Also: Erratum

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The characteristics of reduced density channels generated by laser initiated discharges have been investigated by means of collinear holographic interferometry and schlieren photography. We report the first direct measurements of the density profiles in the interior of such channels. Under unperturbed conditions these channels exhibit azimuthal asymmetries. Gas dynamics within the channel are also presented for the case of incident shock waves reflected from cylindrical and planar boundaries.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.-m Plasma diagnostic techniques and instrumentation
52.25.Kn Thermodynamics of plasmas

Electron kinetics of silane discharges

A. Garscadden, G. L. Duke, and W. F. Bailey

Appl. Phys. Lett. 43, 1012 (1983); http://dx.doi.org/10.1063/1.94226 (3 pages) | Cited 39 times

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A numerical solution of the Boltzmann transport equation for electrons has been used to calculate the electron energy distribution function in silane for a range of applied steady‐state fields. This enables the evaluation of the fractional energy transfer for vibrational excitation and dissociation, the rate coefficients for the different processes and the electron transport properties.
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51.10.+y Kinetic and transport theory of gases
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
34.50.Ez Rotational and vibrational energy transfer
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Influence of Cu as an impurity in Al/Ti and Al/W thin‐film reactions

I. Krafcsik, J. Gyulai, C. J. Palmström, and J. W. Mayer

Appl. Phys. Lett. 43, 1015 (1983); http://dx.doi.org/10.1063/1.94212 (3 pages) | Cited 42 times

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Thin‐film reactions of Al/Ti and Al/W with 3 at. % Cu in Al were investigated by glancing‐angle x‐ray diffraction and Rutherford backscattering for vacuum annealing in the temperature range 300–500 °C. In the Al/Ti system, the intermetallic phase Al3Ti grows as (time)1/2. The presence of Cu in Al retards the growth rate by an order of magnitude at 400 °C and increases the activation energy from 1.8±0.1 to 2.4±0.1 eV. In the Al/W system, the presence of Cu retards the penetration of W into Al.
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66.30.J- Diffusion of impurities
66.30.Ny Chemical interdiffusion; diffusion barriers
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Preparation of ‘‘amorphous’’ Ni60Nb40 by mechanical alloying

C. C. Koch, O. B. Cavin, C. G. McKamey, and J. O. Scarbrough

Appl. Phys. Lett. 43, 1017 (1983); http://dx.doi.org/10.1063/1.94213 (3 pages) | Cited 508 times

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‘‘Amorphous’’ Ni60Nb40 has been prepared by mechanical alloying of elemental nickel and niobium powders in a laboratory ball mill in controlled environments. X‐ray diffraction was used to follow the progress of the mechanical alloying which eventually produced ‘‘amorphous’’ diffraction patterns similar to those for liquid quenched amorphous Ni60Nb40. Crystallization behavior was measured by differential scanning calorimetry for the mechanically alloyed and liquid quenched material. The differences that were observed in this behavior, and in the products of crystallization, may be attributed to impurities (especially oxygen) introduced during mechanical alloying.
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81.05.Kf Glasses (including metallic glasses)
61.66.Dk Alloys
61.43.Fs Glasses
61.43.-j Disordered solids

Strain measurements by channeling angular scans

S. T. Picraux, L. R. Dawson, G. C. Osbourn, R. M. Biefeld, and W. K. Chu

Appl. Phys. Lett. 43, 1020 (1983); http://dx.doi.org/10.1063/1.94214 (3 pages) | Cited 32 times

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We demonstrate the first direct measurement of strain in InxGa1−xAs/GaAs strained‐layer superlattices by ion channeling angular scans. This technique permits quantitative measurement of the strain without requiring computer simulations of dechanneling. The measurements are generally applicable to the study of strain in heteroepitaxial layers.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.-a Thin film structure and morphology

Laser recrystallization of silicon stripes in SiO2 grooves with a polycrystalline silicon sublayer

Koji Egami, Masakazu Kimura, and Tsuneo Hamaguchi

Appl. Phys. Lett. 43, 1023 (1983); http://dx.doi.org/10.1063/1.94215 (3 pages) | Cited 7 times

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A new substrate structure has been proposed for obtaining laser‐recrystallized silicon on quartz glass. Single crystal Si stripes as large at 12×500 μm, dielectrically isolated with a width as small at 1.5 μm, have been obtained by use of the new structure, in which polysilicon stripes are placed in SiO2 grooves and a polycrystalline silicon sublayer is inserted between the SiO2 layer and quartz glass to improve the thermal profile in recrystallization. The proposed structure is useful for realizing both enlargement and positional control of Si grains.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.66.Fn Inorganic compounds
81.10.Fq Growth from melts; zone melting and refining
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Photo‐oxidation of silicon monoxide to silicon dioxide with pulsed far‐ultraviolet (193 nm) laser radiation

S. E. Blum, K. H. Brown, and R. Srinivasan

Appl. Phys. Lett. 43, 1026 (1983); http://dx.doi.org/10.1063/1.94216 (2 pages) | Cited 11 times

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Silicon monoxide films (1000–5000 Å thick) are converted to silicon dioxide when irradiated in air with pulses (∼15 n half‐width) of 193‐nm radiation (40–110 mJ/cm2) from an excimer laser. The quantum efficiency of the process has a minimum value of 0.014.
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77.55.-g Dielectric thin films
61.80.-x Physical radiation effects, radiation damage
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments

Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patterns

Hiroshi Ishiwara, Hiroshi Yamamoto, Seijiro Furukawa, Masao Tamura, and Takashi Tokuyama

Appl. Phys. Lett. 43, 1028 (1983); http://dx.doi.org/10.1063/1.94217 (3 pages) | Cited 27 times

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Lateral solid phase epitaxy of amorphous Si films vacuum evaporated on Si substrates with SiO2 patterns has been investigated, in which the films first grow vertically in the region directly contacted to the Si substrates and then grow laterally onto SiO2 patterns. It was found from transmission electron microscopy and Nomarski optical microscopy that the lateral growth occurred in dense amorphous Si films formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, but it hardly occurred in porous films deposited at room temperature. The maximum length of the epitaxial film on SiO2 was about 6 μm after 10‐h annealing at 600 °C.
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68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electrical properties of undoped and Si‐doped Al0.48In0.52As grown by liquid phase epitaxy

Toshiyuki Tanahashi, Kazuo Nakajima, Akio Yamaguchi, and Itsuo Umebu

Appl. Phys. Lett. 43, 1030 (1983); http://dx.doi.org/10.1063/1.94218 (3 pages) | Cited 8 times

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Electrical properties of undoped Al0.48In0.52As layers grown by liquid phase epitaxy (LPE) were studied for the first time. The carrier concentration n(cm−3) and the mobility μ(cm2/Vs) were μ=4600 cm2/Vs at n=4.7×1015 cm−3 and μ=4500 cm2/Vs at n=5.9×1015 cm−3 at room temperature. The doping data of Si in LPE‐grown Al0.48In0.52As and the resulting mobility and carrier concentration were also studied. The distribution coefficient of Si was determined to be 0.019. The mobility of Al0.48In0.52As is comparable to that of InP when compared at the same carrier concentration.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Anion inclusions in III‐V semiconductors

H. Gant, L. Koenders, F. Bartels, and W. Mönch

Appl. Phys. Lett. 43, 1032 (1983); http://dx.doi.org/10.1063/1.94219 (3 pages) | Cited 9 times

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On all surfaces cleaved from InP, GaP, GaAs, and GaSb a local excess of anion atoms was detected as bright spots in the image of the electron current absorbed by the samples and identified by using a scanning Auger electron spectrometer exhibiting a spatial resolution of 20 μm. Arsenic zones were detected on horizontal Bridgman‐ as well as liquid encapsulation Czochralski grown GaAs indicating their existence to be independent of the crystal growth technique. The densities of anion zones varied between 10 and 500 per square centimeter on a cleave‐to‐cleave basis. Their diameters typically measured approximately 50 μm. The investigations indicate that the anion zones originate from inclusions in the bulk becoming exposed by cleavage.
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61.72.S- Impurities in crystals
81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

High efficient GaAlAs light‐emitting diodes of 660 nm with a double heterostructure on a GaAlAs substrate

Hisanori Ishiguro, Kazuhiro Sawa, Shigeru Nagao, Haruyoshi Yamanaka, and Susumu Koike

Appl. Phys. Lett. 43, 1034 (1983); http://dx.doi.org/10.1063/1.94220 (3 pages) | Cited 13 times

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A new type GaAlAs light‐emitting diode of 660 nm with a double heterostructure fabricated on a GaAlAs substrate has been developed. It can provide high efficiency of 8.0% and high speed response with a cut‐off frequency of 20 MHz. The GaAlAs substrate is transparent at the emission wavelength of 650–660 nm, bringing about a reduction of internal absorption to increase the efficiency. The DH structure produces a high speed of response by confining carriers in the thin active layer.
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85.60.Jb Light-emitting devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.60.Fi Electroluminescence

Effects of power and hydrogen in the discharge on the photovoltaic properties of sputtered amorphous silicon

T. D. Moustakas and H. P. Maruska

Appl. Phys. Lett. 43, 1037 (1983); http://dx.doi.org/10.1063/1.94227 (3 pages) | Cited 4 times

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The photovoltaic properties of amorphous silicon films produced by reactive sputtering have been investigated as a function of power level and hydrogen concentration in the discharge. We find that raising the power in the discharge leads to films with better bulk properties but poorer surface properties. Increasing the hydrogen concentration in the discharge affects the photovoltaic properties of the films by increasing the optical gap of the film and simultaneously decreasing the density of states in the middle of the gap. Because of this dual role of hydrogen, films with optical gaps of 1.7–1.85 eV are capable of generating the same magnitude of short circuit current in sunlight. However, the large gap material is capable of providing a higher open circuit voltage and therefore results in solar cells with better overall performance.
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81.15.Cd Deposition by sputtering
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.05.Kf Glasses (including metallic glasses)

New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy

F. Capasso, K. Alavi, A. Y. Cho, P. W. Foy, and C. G. Bethea

Appl. Phys. Lett. 43, 1040 (1983); http://dx.doi.org/10.1063/1.94228 (3 pages) | Cited 2 times

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We report the first Al0.48In0.52As/Ga0.47In0.53As long wavelength avalanche photodiode. The device, grown by molecular beam epitaxy, has high responsivities over a wide spectral range (0.85–1.7 μm). Avalanche gains of ≂27 at relatively low operating voltages (≲30 V) are observed. The band edge discontinuities of this heterojunction make these devices potentially faster than similar abrupt structures of InP/Ga0.47In0.53As. Fast response with a full width at half‐maximum of ≂250 ps and no tails are observed.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling

Evidence for a dense electron‐hole plasma close to the melting phase transition in silicon

P. M. Fauchet and A. E. Siegman

Appl. Phys. Lett. 43, 1043 (1983); http://dx.doi.org/10.1063/1.94229 (3 pages) | Cited 5 times

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We have studied both theoretically and experimentally the dynamics of laser‐induced electron‐hole plasmas created at the surface of silicon using the strong synergy observed during simultaneous illumination by two picosecond pulses of different wavelengths. In a range of intensities up to those capable of producing a phase transition, we find good agreement between the results of our experiments and the predictions of a conventional model for pulsed laser heating.
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71.35.-y Excitons and related phenomena
72.30.+q High-frequency effects; plasma effects
64.70.D- Solid-liquid transitions
79.20.Ds Laser-beam impact phenomena
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