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15 Dec 1983

Volume 43, Issue 12, pp. 1083-1134


Maskless chemical etching of submicrometer gratings in single‐crystalline GaAs

D. V. Podlesnik, H. H. Gilgen, R. M. Osgood, and A. Sanchez

Appl. Phys. Lett. 43, 1083 (1983); http://dx.doi.org/10.1063/1.94250 (3 pages) | Cited 25 times

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Submicrometer optical gratings are produced in a GaAs surface by a laser‐enhanced, wet‐etching process which permits the fabrication of different grating profiles. The etch process was investigated by in situ optical measurements of the diffracted beams and electron microscopy.
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81.65.-b Surface treatments
42.79.Dj Gratings

Sealed‐off CO2 lasers with La1−xSrxCoO3 oxide cathodes

N. Karube, N. Iehisa, K. Fukaya, and K. Matsuo

Appl. Phys. Lett. 43, 1086 (1983); http://dx.doi.org/10.1063/1.94251 (3 pages) | Cited 7 times

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Some of the perovskite oxides such as La0.7Sr0.3CoO3 sintered at 1150 °C can have the function, when used as cathode materials in sealed‐off CO2 lasers, to improve both output power and operating life. While the output power of the order of 50 W/m has become obtainable in sealed‐off tubes, the longest life observed was 4400 h. It has been shown that this improvement comes from the simultaneous presence of the following properties in some perovskites, of oxygen emissivity, catalytic activity, metallic conductivity, and low sputtering rate.
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42.60.By Design of specific laser systems
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Intrinsic absorptive optical bistability in CdS

K. Bohnert, H. Kalt, and C. Klingshirn

Appl. Phys. Lett. 43, 1088 (1983); http://dx.doi.org/10.1063/1.94252 (3 pages) | Cited 61 times

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An intrinsic absorptive optical bistability is observed in the transmission of high intensity, nanosecond laser pulses through thin CdS platelets at liquid helium temperature. The bistability is due to a renormalization of the band gap which is caused by the formation of an electron hole plasma and occurs in a broad spectral range below the excitonic resonances. The switching times are in the subnanosecond range. The dependence on photon energy is investigated and discussed.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena
42.62.-b Laser applications

Gigahertz bit rate analog to digital conversion with optical outputs using cleaved‐coupled‐cavity semiconductor lasers

N. A. Olsson, W. T. Tsang, R. A. Logan, and C. K. N. Patel

Appl. Phys. Lett. 43, 1091 (1983); http://dx.doi.org/10.1063/1.94253 (2 pages) | Cited 1 time

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A combined high‐speed analog to digital converter, and optical transmitter, based on the frequency tuning capability of cleaved‐coupled‐cavity semiconductor lasers is proposed and demonstrated. The device, which acts as a level discriminator with optical outputs can either continuously sample the analog input or be strobed at rates up to ∼ 1 Gsamples/s. A four‐level conversion of a 100‐MHz sinusoidal input is shown.
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07.05.Hd Data acquisition: hardware and software
07.05.Kf Data analysis: algorithms and implementation; data management
07.05.Rm Data presentation and visualization: algorithms and implementation
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

High near‐infrared reflectivity modulation with polycrystalline electrochromic WO3 films

R. B. Goldner, D. H. Mendelsohn, J. Alexander, W. R. Henderson, D. Fitzpatrick, T. E. Haas, H. H. Sample, R. D. Rauh, M. A. Parker, and T. L. Rose

Appl. Phys. Lett. 43, 1093 (1983); http://dx.doi.org/10.1063/1.94254 (3 pages) | Cited 25 times

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A near‐infrared reflectivity exceeding 60% at 2.5‐μm wavelength has been observed for a polycrystalline, rf sputter‐deposited electrochromic (EC) WO3 film in a deeply colored state. This reflectivity is considerably higher than that previously reported for a thermally evaporated EC‐WO3 film that was crystallized by a post‐deposition thermal anneal. The shapes of the x‐ray spectra of the two films are also different. The results of ellipsometry measurements of the optical constants provide convincing evidence for the validity of a free‐electron Drude model to explain the reflectivity modulation observed in polycrystalline EC‐WO3.
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75.20.Ck Nonmetals
07.60.Fs Polarimeters and ellipsometers

High‐power phase‐locked arrays of index‐guided diode lasers

D. Botez and J. C. Connolly

Appl. Phys. Lett. 43, 1096 (1983); http://dx.doi.org/10.1063/1.94239 (3 pages) | Cited 48 times

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A nine‐unit phase‐locked array of index‐guided channel‐substrate‐planar large‐optical‐cavity AlGaAs diode lasers is fabricated by one‐step liquid phase epitaxial growth over a 5‐μm period sawtooth grating etched into a GaAs substrate. Two‐lobed, 180° phase shift operation is achieved to 75‐mW cw power and to 400‐mW peak pulsed power. Strong coherent optical coupling between the array units provides single‐longitudinal‐mode array operation to 80‐mW cw output power. The cw and pulsed threshold currents are in the 250–400‐mA range. Single‐lobe, 0° phase shift operation, with the single beam peaked at 0°, is achieved to 200‐mW peak power.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.82.-m Integrated optics

X‐ray generated ultrasound

Kwang Yul Kim and Wolfgang Sachse

Appl. Phys. Lett. 43, 1099 (1983); http://dx.doi.org/10.1063/1.94240 (3 pages) | Cited 6 times

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This letter describes the first observations of x‐ray generated ultrasonic signals in materials. The x rays used were the pulsed x‐ray beams of continuous energy spectrum taken from a high‐energy synchrotron source. The ultrasonic signals were detected with conventional piezoelectric transducers attached to stainless steel specimens.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.70.Dm X-ray absorption spectra
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Hole burning spectroscopy of R′ aggregate color centers in polycrystalline LiF thin films using a GaAlAs diode laser

Carmen Ortiz, Carmen N. Afonso, Peter Pokrowsky, and Gary C. Bjorklund

Appl. Phys. Lett. 43, 1102 (1983); http://dx.doi.org/10.1063/1.94241 (3 pages) | Cited 10 times

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The first spectroscopic measurements of R′ aggregate color centers contained in polycrystalline LiF hosts are reported. The inhomogeneous and homogeneous widths of the 830‐nm zero phonon line are measured by conventional grating spectroscopy and by photochemical hole burning spectroscopy using a current tuned GaAlAs diode laser with 3‐mW output power. An extensive photochemical hole burning comparison between single and polycrystalline samples is presented.
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68.55.-a Thin film structure and morphology

Investigation of the silicon beading phenomena during zone‐melting recrystallization

Z. A. Weinberg, V. R. Deline, T. O. Sedgwick, S. A. Cohen, C. F. Aliotta, G. J. Clark, and W. A. Lanford

Appl. Phys. Lett. 43, 1105 (1983); http://dx.doi.org/10.1063/1.94242 (3 pages) | Cited 7 times

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During recrystallization of encapsulated silicon films on SiO2, by the graphite strip heater technique, the silicon sometimes breaks apart and agglomerates into small beads or stripes. By secondary ion mass spectroscopy analysis, it was found that a high concentration of nitrogen at the interface between the silicon and the top SiO2 capping layer is needed to prevent this from occurring. Incorporation of hydrogen into the crystallization ambient was found to cause the beading to occur. The initial stages of the bead formation were investigated by scanning electron cross‐section microscopy.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Metalorganic chemical vapor deposition of oriented ZnO films over large areas

Frank T. J. Smith

Appl. Phys. Lett. 43, 1108 (1983); http://dx.doi.org/10.1063/1.94243 (3 pages) | Cited 46 times

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A metalorganic chemical vapor deposition process for preparing c‐axis‐oriented ZnO films in a simple system of the type commercially available for SiO2 deposition is described. The resulting layers are highly uniform in thickness and adhere to a variety of substrates. Film properties and structure are described briefly.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.61.Ng Insulators

29Si hyperfine structure of unpaired spins at the Si/SiO2 interface

K. L. Brower

Appl. Phys. Lett. 43, 1111 (1983); http://dx.doi.org/10.1063/1.94244 (3 pages) | Cited 166 times

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The hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2 interface (Pb centers) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interaction S↘⋅math⋅I↘ arises from the 29Si isotope and is characterized by A∥=146.(±5.)×10−4 cm−1 and A⊥=85.(±8.)×10−4 cm−1. An analysis of this hyperfine interaction firmly establishes many of the details in the structure of this interface defect.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
76.30.Mi Color centers and other defects

Optical absorption tail in InP:Mn from surface photovoltage measurements

C. L. Chiang, S. Wagner, and A. A. Ballman

Appl. Phys. Lett. 43, 1113 (1983); http://dx.doi.org/10.1063/1.94245 (3 pages) | Cited 2 times

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The steady‐state surface photovoltage technique was used to determine the optical absorption tail of InP:Mn, by extrapolation from the above‐band‐gap absorption spectrum. Reabsorbed recombination radiation is shown to have no effect on this procedure although it does raise the effective minority‐carrier diffusion length. The tail absorption coefficient of InP:Mn increases with hole density in the range of 4.1×1014 cm to 5.3×1016 cm−3. In the 1016 cm−3 range, the absorption coefficient appears to rise also with the density of dislocations.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Mr Semiconductor-electrolyte contacts

New minority hole sinked photoconductive detector

C. Y. Chen, Y. M. Pang, A. Y. Cho, and P. A. Garbinski

Appl. Phys. Lett. 43, 1115 (1983); http://dx.doi.org/10.1063/1.94246 (3 pages) | Cited 10 times

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We demonstrate a new photoconductive device called minority hole sinked photoconductive detector. This detector has a back gate electrode for removing slow minority holes, resulting in an improvement of the detector’s fall time from 1 ns to 450 ps down to 80 ps. This represents nearly an order of magnitude improvement in the gain‐bandwidth product. Furthermore, the back gate bias can reduce the noise power by 1 dB at 100 MHz and 0.25 dB at 800 MHz at 1.2‐MHz noise bandwidth.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Platinum diffusion into silicon from PtSi

A. Prabhakar, T. C. McGill, and M‐A. Nicolet

Appl. Phys. Lett. 43, 1118 (1983); http://dx.doi.org/10.1063/1.94247 (3 pages) | Cited 12 times

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We have observed platinum diffusion into the silicon underlying a PtSi film. Silicon substrates covered with platinum films were annealed at temperatures from 300 to 800 °C to form the silicide. Backscattering spectrometry spectra show no degradation of the silicide in the samples treated below 700 °C. Deep level transient spectroscopy (DLTS) was used to measure diffused platinum electron traps. Electron trap concentrations in samples treated below 700 °C are below the DLTS detection limit of 5×1011/cm3. Trap concentration profiles for the samples annealed at higher temperatures were obtained. These profiles cannot in general be explained by simple diffusion from an infinite source of platinum at the surface.
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66.30.J- Diffusion of impurities
78.40.Fy Semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Local oxidation induced dislocation generation near [100] Si3N4 film edges

J. Vanhellemont, J. Van Landuyt, S. Amelinckx, C. Claeys, G. Declerck, and R. Van Overstraeten

Appl. Phys. Lett. 43, 1120 (1983); http://dx.doi.org/10.1063/1.94248 (3 pages) | Cited 3 times

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The generation of dislocations at [100] nitride film edges on (001)Czochralski silicon wafers is studied by means of high voltage electron microscopy. After local oxidation 90° (edge) dislocations forming triangular half‐loops with sides lying in [211] and [211] directions in a (011) plane are found. It is observed that the shape of the surface stacking faults is also influenced by the mask orientation and that a denuded zone free from bulk defects is formed at the silicon surface. A novel model to explain the dislocation generation and movement under the influence of the stresses near the Si3N4 film edges is discussed.
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61.72.Lk Linear defects: dislocations, disclinations
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Al‐Si contacts formed by ion irradiation and post‐annealing

L. S. Hung, J. W. Mayer, M. Zhang, and E. D. Wolf

Appl. Phys. Lett. 43, 1123 (1983); http://dx.doi.org/10.1063/1.94249 (3 pages) | Cited 12 times

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Al‐Si contacts have been formed by implantation of As ions through Al‐Si interfaces followed by heat treatment at 400–500 °C for 10 min. The erosion of Si proceeds uniformly in contact areas at the sintering temperatures. Diodes using Al‐Si contacts produced by this technique have been fabricated on thin n+ layers in p‐type Si substrates with junction depths of 0.35 μm and contact areas of 5 μm2. The average leakage current per diode (with an approximate junction area of 14×26 μm2) is about 10−8 A, as compared to the leakage current of 10−5 A for diodes with Al‐Si contacts prepared by sintering of Al on Si at 420 °C. We attribute the improvement to the uniformity of Si erosion after the interfacial oxide has been dispersed by ion irradiation.
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73.40.Ns Metal-nonmetal contacts
61.72.U- Doping and impurity implantation
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
85.30.Kk Junction diodes

Orientation filtering by growth‐velocity competition in zone‐melting recrystallization of silicon on SiO2

H. A. Atwater, C. V. Thompson, Henry I. Smith, and M. W. Geis

Appl. Phys. Lett. 43, 1126 (1983); http://dx.doi.org/10.1063/1.94255 (3 pages) | Cited 8 times

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We describe a method of controlling the in‐plane 〈100〉 directions of grains in (100)‐textured silicon films produced by zone‐melting recrystallization over amorphous SiO2. Grains having in‐plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.
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68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Improvement in high‐field critical currents of in situ processed Nb3Sn by titanium addition

Y. Yoshida, K. Togano, and K. Tachikawa

Appl. Phys. Lett. 43, 1129 (1983); http://dx.doi.org/10.1063/1.94256 (3 pages) | Cited 1 time

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The effects of the addition of a small amount of Ti to in situ processed Nb3Sn tape superconductors have been studied. It has been found that Ti addition significantly improves the critical current density Jc at high magnetic fields above 12 T. A Jc value of 3×104 A/cm2 at a magnetic field of 15 T parallel to the tape surface was obtained for the Cu‐40 (Nb‐1.6 wt. % Ti) tape reacted with Sn at 650 °C for 100 h. This enhancement in high‐field performance can be associated with the incorporation of Ti into the A15 Nb3Sn.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.40.Rs Electrical and magnetic properties related to treatment conditions

Effect of chemical doping on the radiation‐induced conductivity of polyethylene terephthalate

S. R. Kurtz, C. Arnold, and R. C. Hughes

Appl. Phys. Lett. 43, 1132 (1983); http://dx.doi.org/10.1063/1.94257 (3 pages) | Cited 9 times

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A large decrease in the radiation‐induced conductivity of polyethylene terephthalate was produced upon doping films with an electron acceptor molecule. Transient x‐ray photoconductivity data verify that this impurity acts as a deep trap. Charge transfer occurs in the doped dielectric which may be associated with this trapping process.
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72.40.+w Photoconduction and photovoltaic effects
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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