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15 Jul 1983

Volume 43, Issue 2, pp. 131-215

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Comparison of guided‐wave interferometric modulators fabricated on LiNbO3 via Ti indiffusion and proton exchange

R. A. Becker

Appl. Phys. Lett. 43, 131 (1983); http://dx.doi.org/10.1063/1.94280 (3 pages) | Cited 50 times

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Guided‐wave electro‐optic Mach–Zehnder interferometric modulators have been fabricated on LiNbO3. The channel waveguides were formed by titanium indiffusion in some devices and proton exchange in benzoic acid in others. The modulators were tested at 0.85‐μm and/or 1.3‐μm wavelengths for insertion loss, electro‐optic activity, and susceptibility to optical damage. A substantial reduction in the electro‐optic activity accompanied by a reduced susceptibility to optical damage is measured for the proton‐exchanged modulators.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers

Measurement of carrier and lattice heating in 1.3‐μm InGaAsP light‐emitting diodes

J. Manning, R. Olshansky, C. B. Su, and W. Powazinik

Appl. Phys. Lett. 43, 134 (1983); http://dx.doi.org/10.1063/1.94281 (2 pages) | Cited 5 times

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The hot‐carrier effects reported for InGaAsP light‐emitting diodes are shown to result primarily from lattice heating. The small amount of heating observed at currents corresponding to typical threshold current density has negligible effect on the characteristic temperature T0 measured for InGaAsP lasers under pulsed conditions.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Phase‐locked InGaAsP laser array with diffraction coupling

T. R. Chen, K. L. Yu, B. Chang, A. Hasson, S. Margalit, and A. Yariv

Appl. Phys. Lett. 43, 136 (1983); http://dx.doi.org/10.1063/1.94282 (2 pages) | Cited 6 times

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A phase‐locked array of InGaAsP lasers has been fabricated for the first time. This 50‐μm‐wide array utilized diffraction coupling between adjacent lasers to achieve phase locking. Threshold current as low as 200 mA is obtained for arrays with 250‐μm cavity length. Smooth single‐lobe far‐field patterns with beam divergence as narrow as 3° have been achieved.
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42.55.Px Semiconductor lasers; laser diodes

Reliability of constricted double‐heterojunction AlGaAs diode lasers

D. Botez, J. C. Connolly, M. Ettenberg, D. B. Gilbert, and J. J. Hughes

Appl. Phys. Lett. 43, 137 (1983); http://dx.doi.org/10.1063/1.94283 (3 pages) | Cited 1 time

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Constricted double‐heterojunction diode lasers have been life tested at 70 °C heatsink temperature and 3–4 mW/facet in cw operation. A median life of 7800 h is obtained at 70 °C, which extrapolates to 4×105 h median life at room temperature. The extrapolated mean time to failure at room temperature is in excess of 106 h. Single‐longitudinal‐mode cw operation is maintained after 10 000 h of accelerated aging at 70 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Jb Light-emitting devices

Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers

Kerry Vahala and Amnon Yariv

Appl. Phys. Lett. 43, 140 (1983); http://dx.doi.org/10.1063/1.94260 (3 pages) | Cited 24 times

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In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian.
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42.55.Px Semiconductor lasers; laser diodes

Supersonic‐nitrogen flow‐field measurements with the resonant Doppler velocimeter

S. Cheng, M. Zimmermann, and R. B. Miles

Appl. Phys. Lett. 43, 143 (1983); http://dx.doi.org/10.1063/1.94284 (3 pages) | Cited 14 times

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Laser‐induced fluorescence of sodium atoms seeded into a supersonic nitrogen jet is used to determine the velocity, temperature, and pressure of the flow. The visible signal is sufficiently intense for spatially resolved flow visualization purposes.
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47.80.-v Instrumentation and measurement methods in fluid dynamics
47.27.wg Turbulent jets
47.40.Ki Supersonic and hypersonic flows
07.60.Rd Visible and ultraviolet spectrometers

Laser‐controlled chemical etching of aluminum

Jeffrey Y. Tsao and Daniel J. Ehrlich

Appl. Phys. Lett. 43, 146 (1983); http://dx.doi.org/10.1063/1.94285 (3 pages) | Cited 20 times

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A new technique is described for high‐spatial‐resolution (<2‐μm linewidth) etching of Al thin films. The process is based upon moderate local heating by a tightly focused Ar+ laser beam to activate an etching reaction in mixtures of phosphoric acid, nitric acid, and potassium dichromate. By chemically biasing the reaction near its passive/active transition, the laser can enhance the reaction rate by more than six orders of magnitude. The etching mechanism has been studied by etch‐rate measurements, ellipsometry, and Auger spectroscopy, and is ascribed to a competition between the formation of soluble aluminum phosphates and insoluble aluminum oxides.
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81.05.Bx Metals, semimetals, and alloys
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.45.-h Electrochemistry and electrophoresis
79.20.Ds Laser-beam impact phenomena

Optical fiber V‐groove transversal filter

S. A. Newton, K. P. Jackson, and H. J. Shaw

Appl. Phys. Lett. 43, 149 (1983); http://dx.doi.org/10.1063/1.94261 (3 pages) | Cited 3 times

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A novel single mode optical fiber tapped delay line that uses silicon V‐groove substrates to align an array of directional coupler taps has been demonstrated as a transversal filter. The device was used to generate and correlate 4‐bit, 400‐Mb/s coded sequences. The generated codes exhibited an amplitude uniformity of ±0.04 dB. The electrical correlation output was linear over a range of 25 dB and was limited by electronic components external to the fiber filter itself. Extension of the fabrication technique to include hundreds of taps at intervals as short as several picoseconds may be possible.
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42.81.-i Fiber optics
84.30.Vn Filters

Nonlinear photoacoustic measurement of laser pulse correlation functions

A. Schmid, P. Horn, and P. Bräunlich

Appl. Phys. Lett. 43, 151 (1983); http://dx.doi.org/10.1063/1.94262 (3 pages) | Cited 4 times

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A simple method is described for the measurement of temporal characteristics of short picosecond‐nanosecond laser pulses in the visible and near IR. It relies on the photoacoustic detection of two‐photon absorption in thallous halides in an otherwise conventional correlation experiment.
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42.65.-k Nonlinear optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Threshold‐wavelength and threshold‐temperature dependences of GaInAsP/InP lasers with frequency selective feedback operating in the 1.3‐ and 1.5‐μm regions

W. T. Tsang, N. A. Olsson, and R. A. Logan

Appl. Phys. Lett. 43, 154 (1983); http://dx.doi.org/10.1063/1.94263 (3 pages) | Cited 2 times

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We have shown for the first time that a detailed and systematic study of the threshold‐wavelength and the threshold‐temperature dependences at different lasing wavelengths of laser diodes with built‐in frequency selective feedback (FSF) mechanisms such as distributed feedback lasers, distributed Bragg reflector lasers, and lateral‐evanescent field distributed feedback lasers, can be conveniently performed by utilizing external cavity semiconductor lasers with frequency selective feedback. The results obtained show that the position of the FSF lasing mode within the spectral gain profile of the laser significantly affected the threshold current and threshold‐temperature dependence.
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42.55.Px Semiconductor lasers; laser diodes
81.10.Fq Growth from melts; zone melting and refining
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Surface photoacoustic wave spectroscopy of thin films

S. R. J. Brueck, T. F. Deutsch, and D. E. Oates

Appl. Phys. Lett. 43, 157 (1983); http://dx.doi.org/10.1063/1.94264 (3 pages) | Cited 10 times

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Time‐resolved detection of the surface acoustic waves (SAW) generated upon relaxation of energy optically absorbed in surface films has been used to measure surface absorption spectra and laser‐induced desorption cross sections. This new background‐free spectroscopic technique is shown to be highly sensitive to the details of the film/substrate bonding. Minimum detectable molecular surface densities of 2×1011 cm−2 over an area of 10−3 cm2 have been demonstrated for rhodamine‐590 dye on a crystal quartz substrate using a pulsed laser source and an edge‐bonded SAW detector.
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78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
43.35.Pt Surface waves in solids and liquids
68.35.Md Surface thermodynamics, surface energies
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

A novel technique for enhancing photoacoustic signals from solids

P. Ganguly and T. Somasundaram

Appl. Phys. Lett. 43, 160 (1983); http://dx.doi.org/10.1063/1.94265 (3 pages) | Cited 13 times

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Enhancement of the photoacoustic signal from condensed materials by several folds is achieved by the introduction of a liquid with high vapor pressure in the photoacoustic cell. The enhancement is especially marked for low absorption coefficients and high chopping frequencies. Typically the enhancement is two to nine times in the presence of diethyl ether at 293 K. A linear relationship is observed between the enhancement and the vapor pressure of the liquid.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Simultaneous ultraviolet laser triggering of two multimegavolt gas switches

R. G. Adams, D. L. Smith, and J. R. Woodworth

Appl. Phys. Lett. 43, 163 (1983); http://dx.doi.org/10.1063/1.94266 (3 pages) | Cited 2 times

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The output from a low‐beam‐divergence KrF ultraviolet laser has been used to simultaneously trigger two multimegavolt gas‐filled switches emersed in a water dielectric. Focusing 55 mJ of laser energy into the interelectrode gap of each switch has produced simultaneity jitter of ≤1.7 ns for closure of both 2.40‐MV self‐breakdown voltage (SBV) switches. Both switches have displayed essentially identical switching behavior, with individual switch jitter ≲2.3 ns. The triggering delay to switch closure after laser irradiation of the switch has exhibited linear dependence upon switch voltage in the 60%–90% SBV region.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Thin‐film thickness measurements with thermal waves

Allan Rosencwaig, Jon Opsal, and David L. Willenborg

Appl. Phys. Lett. 43, 166 (1983); http://dx.doi.org/10.1063/1.94267 (3 pages) | Cited 44 times

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We have developed a method for measuring the thickness of thin films that is nondestructive, noncontact and that can make measurements with 2‐μm spatial resolution (i.e., 2‐μm spot size) on both optically opaque as well as optically transparent films. With this method, which is based on the use of high‐frequency thermal waves, thicknesses of Al and SiO2 films on Si substrates have been measured in the 500–25 000‐Å range.
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68.60.-p Physical properties of thin films, nonelectronic
42.62.-b Laser applications
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
65.40.De Thermal expansion; thermomechanical effects

Time‐resolved temperature measurement of picosecond laser irradiated silicon

L. A. Lompré, J. M. Liu, H. Kurz, and N. Bloembergen

Appl. Phys. Lett. 43, 168 (1983); http://dx.doi.org/10.1063/1.94268 (3 pages) | Cited 44 times

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Time‐resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100‐nm thickness.
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79.20.Ds Laser-beam impact phenomena

Freedericksz transition of twisted nematic cells

K. H. Yang

Appl. Phys. Lett. 43, 171 (1983); http://dx.doi.org/10.1063/1.94269 (3 pages) | Cited 17 times

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A general formula for calculating the Freedericksz transition of twisted nematic liquid crystal cells has been derived by taking into consideration the following factors: unequal elastic constants and arbitrary dielectric anisotropy for the liquid crystal medium, and a general form of the anisotropic liquid crystal‐to‐substrate interfacial potential with negligible pretilt angle. The numerical computation of the threshold voltage as a function of the anchoring anisotropy has been demonstrated for two nematic mixtures. Increasing the degree of multiplexing of twisted nematic cells seems feasible using certain nematic mixtures with weak anchoring anisotropy.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

InP surface states and reduced surface recombination velocity

L. J. Brillson, Y. Shapira, and A. Heller

Appl. Phys. Lett. 43, 174 (1983); http://dx.doi.org/10.1063/1.94270 (3 pages) | Cited 8 times

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Surface photovoltage and Auger electron spectroscopy studies of ultrahigh vacuum cleaved (110) and chemically treated (110) InP reveal direct optical transitions to and from surface states in the band gap for a wide variety of surface conditions. These states correlate with reported Fermi level pinning behavior but cannot account for the unique reduction in surface recombination velocity at KAg(CN)−2 treated surfaces. This reduction is identified instead with formation of a surface layer which excludes ambient‐induced recombination states.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.-c Electronic transport in interface structures
78.20.Jq Electro-optical effects
79.20.Fv Electron impact: Auger emission

Measurement of local stress in laser‐recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scattering

Paul Zorabedian and Fran Adar

Appl. Phys. Lett. 43, 177 (1983); http://dx.doi.org/10.1063/1.94271 (3 pages) | Cited 32 times

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Raman microprobe measurements of stress have been performed on a laser‐recrystallized, seeded, lateral epitaxial silicon film on an oxidized silicon wafer. The direction‐averaged, planar tensile stress increased from 2×109 dyn/cm2 in the seed region to 5×109 dyn/cm2 in the silicon‐on‐insulator region at distances greater than 20 μm from the seed/silicon‐on‐insulator boundary. Grain‐boundary nucleation observed by optical Nomarski microscopy occurred approximately 11 μm from the seed edge in this film. Depth variations of the stress were observed by comparing measurements using 457‐nm and 514.5‐nm excitation wavelengths.
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68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics
65.40.De Thermal expansion; thermomechanical effects
81.10.Fq Growth from melts; zone melting and refining

Advantages of the HgTe‐CdTe superlattice as an infrared detector material

D. L. Smith, T. C. McGill, and J. N. Schulman

Appl. Phys. Lett. 43, 180 (1983); http://dx.doi.org/10.1063/1.94272 (3 pages) | Cited 93 times

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The HgTe‐CdTe superlattice is found to exhibit properties superior to those of the (Hg, Cd)Te alloy as an infrared detector material. A calculation shows that the superlattice tunneling length is shorter than that of the alloy with the same band gap. For a given cutoff wavelength tolerance, we find that less fractional precision is needed in the superlattice control parameter (layer thicknesses) than in the alloy control parameter (composition). Also, p‐side diffusion currents are expected to be reduced due to the larger superlattice electron effective mass.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
78.20.-e Optical properties of bulk materials and thin films

Inversion layers at PbTe interfaces

F. Cerrina, R. R. Daniels, and V. Fano

Appl. Phys. Lett. 43, 182 (1983); http://dx.doi.org/10.1063/1.94273 (3 pages) | Cited 6 times

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Synchrotron‐radiation photoemission experiments directly demonstrate that the creation of an inversion layer is a common feature of the PbTe‐Al, PbTe‐In, and PbTe‐Ge interface formation processes. This phenomenon is interpreted in terms of the experimentally observed adatom‐Pb exchange reactions.
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73.40.Ns Metal-nonmetal contacts
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments

Profile control by chemically assisted ion‐beam and reactive ion beam etching

J. D. Chinn, I. Adesida, and E. D. Wolf

Appl. Phys. Lett. 43, 185 (1983); http://dx.doi.org/10.1063/1.94274 (3 pages) | Cited 4 times

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Investigations with broad‐beam argon and reactive fluorinated ion beams have shown that the etched wall profiles of silicon at submicrometer linewidths can be controlled by varying the ion energy, current, and partial pressure of XeF2. Inert argon and reactive ion beams generated from xenon difluoride produced overcut profiles resulting from predominantly physical etching mechanisms. With very low partial pressures of XeF2 in the background ambient, purely chemical etching of silicon is low while enhanced line‐on‐sight ion‐assisted etching can be used to produce vertical profiles. By increasing the background partial pressure of XeF2, undercut profiles were produced by purely chemical and chemically assisted ion beam mechanisms. Thus, various wall profiles were produced in silicon within the same broad‐beam ion etching equipment using the same two‐component gas system of Ar and XeF2.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1.3 μm) lasers

R. Hirano, E. Oomura, H. Higuchi, Y. Sakakibara, H. Namizaki, W. Susaki, and K. Fujikawa

Appl. Phys. Lett. 43, 187 (1983); http://dx.doi.org/10.1063/1.94275 (3 pages) | Cited 9 times

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We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when the p‐n junction plane coincides with the surface exposed in the high‐temperature H2 ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 °C.
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42.55.Px Semiconductor lasers; laser diodes

Surface ripples in laser‐photochemical wet etching of gallium arsenide

Noriaki Tsukada, Sumio Sugata, Hiroshi Saitoh, and Yoh Mita

Appl. Phys. Lett. 43, 189 (1983); http://dx.doi.org/10.1063/1.94276 (3 pages) | Cited 9 times

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Surface ripples of submicrometer spatial period are observed in laser enhanced etching with liquid etchants. The surface ripple formation in the laser‐photochemical wet etching is not explained by the surface polariton model which needs melting of the semiconductor surface. To explain this ripple formation, we have to consider other mechanisms for ripple formation which does not need melting of the semiconductor surface, such as Raman excitation of surface polariton, polarization charge model, and bulk‐selvedge coupling model. We suggest that this low power and high speed laser‐photochemical etching provides a valuable one‐step process for producing the fine diffraction gratings required by integrated optics.
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81.65.-b Surface treatments
82.50.-m Photochemistry
42.60.-v Laser optical systems: design and operation
68.35.Ja Surface and interface dynamics and vibrations

On the optical evaluation of the EL2 deep level concentration in semi‐insulating GaAs

W. Walukiewicz, J. Lagowski, and H. C. Gatos

Appl. Phys. Lett. 43, 192 (1983); http://dx.doi.org/10.1063/1.94277 (3 pages) | Cited 17 times

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We present a practical procedure for the evaluation of the Fermi energy in semi‐insulating (SI)GaAs from electrical measurements. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near‐infrared absorption measurements, to SI GaAs. Employing this procedure, we showed that the EL2 concentration in Czochralski‐grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p‐type crystals) rather than abruptly as previously proposed.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Ey III-V and II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Density of gap states of silicon grain boundaries determined by optical absorption

Warren B. Jackson, N. M. Johnson, and D. K. Biegelsen

Appl. Phys. Lett. 43, 195 (1983); http://dx.doi.org/10.1063/1.94278 (3 pages) | Cited 101 times

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The results of optical absorption measurements on fine‐grain polycrystalline‐silicon thin films indicate that the singly occupied dangling silicon bond lies 0.65±0.15 eV below the conduction‐band minimum in the grain boundary. The grain boundary band gap is ∼1.0 eV and there is evidence for exponential tailing of the band edges. The optical absorption was determined by photothermal deflection spectroscopy. The dangling silicon bond density has been measured on polycrystalline‐silicon thin films as a function of hydrogen passivation of the grain boundaries and on silicon‐on‐saphhire films. The optical absorption exhibits a defect shoulder which varies as the dangling bond density.
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61.72.Mm Grain and twin boundaries
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