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1 Aug 1983

Volume 43, Issue 3, pp. 217-324

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Carrier leakage and temperature dependence of InGaAsP lasers

T. R. Chen, B. Chang, L. C. Chiu, K. L. Yu, S. Margalit, and A. Yariv

Appl. Phys. Lett. 43, 217 (1983); http://dx.doi.org/10.1063/1.94305 (2 pages) | Cited 17 times

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A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.
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42.55.Px Semiconductor lasers; laser diodes
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Suppression of feedback‐induced noise in short‐cavity V‐channeled substrate inner stripe lasers with self‐oscillation

S. Matsui, H. Takiguchi, H. Hayashi, S. Yamamoto, S. Yano, and T. Hijikata

Appl. Phys. Lett. 43, 219 (1983); http://dx.doi.org/10.1063/1.94306 (3 pages) | Cited 23 times

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Self‐oscillations of V‐channeled substrate inner stripe (VSIS) lasers with index guiding and the influence of external feedback on low‐frequency noise generation are presented. The self‐oscillation is induced by means of shortening a cavity length of VSIS laser to 110 μm. VSIS lasers with self‐oscillation have the fundamental linewidth of 0.56 Å below 3 mW and are not sensitive to both phase and amplitude of the externally reflected light. Signal to noise ratio of short‐cavity VSIS laser at 1 MHz with a 10‐KHz bandwidth was 97 dB at 0.05% optical feedback.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.62.-b Laser applications

Long‐range surface plasmons in electrode structures

G. I. Stegeman and J. J. Burke

Appl. Phys. Lett. 43, 221 (1983); http://dx.doi.org/10.1063/1.94307 (3 pages) | Cited 15 times

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We show that surface plasmon polaritons guided by thin metal electrodes can achieve millimeter plus propagation distances in the near infrared.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.79.Gn Optical waveguides and couplers
73.40.-c Electronic transport in interface structures
73.61.At Metal and metallic alloys

Operation of an inductively ballasted helical TE‐CO2 laser

D. J. Biswas, P. K Bhadani, P. R. K. Rao, U. K. Chatterjee, A. K. Nath, and U. Nundy

Appl. Phys. Lett. 43, 224 (1983); http://dx.doi.org/10.1063/1.94308 (2 pages)

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We report here the successful operation of a Beaulieu‐type TE‐CO2 laser using equalizing inductances. An improvement of 50% or more in the efficiency was observed over resistance‐ballast system.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Hc Glow; corona

Streak camera study of short pulse generation in an optically pumped GaAs/(GaAl)As laser

M. D. Dawson, W. Sibbett, J. I. Vukusic, P. Dawson, G. Duggan, and C. T. Foxon

Appl. Phys. Lett. 43, 226 (1983); http://dx.doi.org/10.1063/1.94309 (3 pages) | Cited 2 times

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A synchronously operated picosecond streak camera has been used in a direct time‐resolved study of luminescence and laser emission from a GaAs/(GaAl)As double heterostructure laser pumped by <90 ps, 514‐nm optical pulses from a mode‐locked Ar ion laser. Semiconductor laser pulse widths down to 20 ps were recorded and the dependence of the temporal characteristics of these pulses on average pump power was investigated.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.40.Fy Semiconductors
07.68.+m Photography, photographic instruments; xerography

90‐fs tunable optical pulses obtained by two‐stage pulse compression

B. Nikolaus and D. Grischkowsky

Appl. Phys. Lett. 43, 228 (1983); http://dx.doi.org/10.1063/1.94302 (3 pages) | Cited 37 times

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We report a factor of 65 compression of the 5.9‐ps [full width at half‐maximum (FWHM)] pulses from a mode‐locked dye laser by a two‐stage technique. In each stage the laser pulses were frequency broadened and linearly chirped by passage through a single‐mode optical fiber, and then compressed by traversal of a diffraction grating based dispersive delay line. The final compressed output pulses had pulse widths of 90 fs (FWHM), peak powers of more than five times that of the input pulses, and were continuously tunable over the 300‐Å range of the laser dye.
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42.65.-k Nonlinear optics
42.81.-i Fiber optics

Anomalous longitudinal mode behavior of a deep Zn‐diffused GaAs/GaAlAs laser

H. K. Choi and Shyh Wang

Appl. Phys. Lett. 43, 230 (1983); http://dx.doi.org/10.1063/1.94303 (3 pages) | Cited 2 times

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Observation of anomalous longitudinal mode behavior from deep Zn‐diffused GaAs/GaAlAs lasers is reported. Single longitudinal mode operation is maintained without any mode hopping over a temperature range of more than 40 °C when the current is fixed. The spectrum, however, is quite sensitive to current changes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Laser driven compression experiments using low x‐ray opacity polymer shells

J. D. Kilkenny, B. J. MacGowan, and P. T. Rumsby

Appl. Phys. Lett. 43, 233 (1983); http://dx.doi.org/10.1063/1.94304 (3 pages) | Cited 2 times

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See Also: Erratum

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The use of polymer shells, filled with dichlorodifluoromethane in laser compression experiments is described. The absence of shell emission leads to chlorine spectra with little contaminating shell continuum emission. The low x‐ray opacity of polymer indicates that chlorine heliumlike emission could be detected even with compressed shell areal density of 0.1 gm cm−2.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
32.30.Rj X-ray spectra

Effect of an active layer thickness on lateral and longitudinal modes of a gain guiding laser with a tapered stripe structure

Takayoshi Mamine and Hiroji Kawai

Appl. Phys. Lett. 43, 235 (1983); http://dx.doi.org/10.1063/1.94310 (3 pages) | Cited 2 times

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Effect of an active layer thickness on the lateral and longitudinal modes of the gain guiding laser with a tapered stripe structure has been studied. We observed broadening in the linewidth of each longitudinal mode as well as continuous emission spectra for the tapered stripe lasers with the thicker active layer of more than 0.1 μm. From the measurement of longitudinal as well as lateral modes, it is concluded that hole burning effect is enhanced in the thicker active layer as was pointed out by Copeland. The experimental results observed for the tapered stripe lasers are inherent to gain guiding lasers with a stripe geometry structure.
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42.50.-p Quantum optics
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Surface acoustic wave mode conversion resonator

S. J. Martin, R. L. Gunshor, M. R. Melloch, S. Datta, and R. F. Pierret

Appl. Phys. Lett. 43, 238 (1983); http://dx.doi.org/10.1063/1.94311 (3 pages) | Cited 2 times

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It is well known that a ZnO‐on‐Si structure supports two distinct surface waves, called the Rayleigh and the Sezawa modes, if the ZnO layer is sufficiently thick. Herein we report a unique surface wave resonator that operates by efficiently converting between the two modes at the resonant frequency. The mode conversion resonator promises enhanced out‐of‐band signal rejection since input and output coupling is effected through different modes.
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43.35.Pt Surface waves in solids and liquids
43.38.Fx Piezoelectric and ferroelectric transducers

Oxygen‐induced recombination centers in as‐grown Czochralski silicon crystals

K. Nauka, H. C. Gatos, and J. Lagowski

Appl. Phys. Lett. 43, 241 (1983); http://dx.doi.org/10.1063/1.94312 (3 pages) | Cited 14 times

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Simultaneous quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime were obtained, for the first time, in Czochralski‐grown Si crystals employing double laser absorption scanning. It was found that oxygen concentration maxima and minima along the crystal growth direction coincide with lifetime minima and maxima, respectively. It was further found that the magnitude of oxygen‐induced lifetime changes increases dramatically in going from the center to the periphery of the crystal. The present findings imply that ‘‘as‐grown’’ oxygen precipitates are involved in lifetime limiting processes.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.jd Vacancies
61.72.jj Interstitials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Epitaxial NiSi2 formation by pulsed laser irradiation of thin Ni layers deposited on Si substrates

M. G. Grimaldi, P. Baeri, E. Rimini, and G. Celotti

Appl. Phys. Lett. 43, 244 (1983); http://dx.doi.org/10.1063/1.94313 (3 pages) | Cited 14 times

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Pulsed laser irradiation was used to induce silicide formation in Ni thin layer deposited onto Si substrates of 〈100〉 and 〈111〉 orientation, respectively. Suitable energy densities of the 30‐ns Nd glass laser pulse produced epitaxial NiSi2 silicide for a 15‐nm‐thick Ni layer. Irradiation of thicker metal films formed instead several silicides of nonuniform composition.
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68.55.-a Thin film structure and morphology
61.80.-x Physical radiation effects, radiation damage
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Temperature‐dependent ion mixing and diffusion during sputtering of thin films of CrSi2 on silicon

U. Shreter, R. Fernandez, and M‐A. Nicolet

Appl. Phys. Lett. 43, 247 (1983); http://dx.doi.org/10.1063/1.94314 (3 pages) | Cited 4 times

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Measurements of sputtering yields and composition profiles have been carried out using backscattering spectrometry for samples of CrSi2 on Si irradiated with 200‐keV Xe ions. When the CrSi2 layer is thinner than the ion range, the sputtering yield ratio of Si to Cr increases from 3.5 for room‐temperature irradiation to 65 at 290 °C. For a thick sample, the corresponding increase is from 2.4 to 4.0. only. These changes are explained in terms of a rise in the Si surface concentration at 290 °C. The driving force for this process seems to be the establishment of stoichiometric CrSi2 compound. Transport of Si to the surface is by ion mixing in the thin sample and thermal diffusion through the thick layer.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.60.-p Physical properties of thin films, nonelectronic
64.75.-g Phase equilibria

Growth of metastable Cu1−xCrx solid solutions by ion mixing during bias‐sputter deposition

S. M. Shin, M. A. Ray, J. M. Rigsbee, and J. E. Greene

Appl. Phys. Lett. 43, 249 (1983); http://dx.doi.org/10.1063/1.94315 (3 pages) | Cited 18 times

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The Cu‐Cr system exhibits a miscibility gap in the liquid and has essentially no solid solubility. However, using low energy, <160 eV, Ar+ ion bombardment of the growing film to promote ballistic collisional mixing, metastable single phase face‐centered‐cubic Cu‐rich and body‐centered‐cubic Cr‐rich solid solutions have been grown on amorphous glass substrates at 75 °C. The films were typically 1 μm thick with average grain sizes of 90 and 110 nm, respectively, and a (111) preferred orientation. Annealing studies combined with x‐ray and electron diffraction analyses showed that the films have good thermal stability against phase separation at temperatures up to 400 °C. The metastable to equilibrium phase transformation occurred with the precipitation of an essentially pure second phase, rather than through a continuous series of metastable states, due to structural constraints.
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68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria
64.60.My Metastable phases
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Pore size distribution of shaley rock by small angle neutron scattering

P. L. Hall, D. F. R. Mildner, and R. L. Borst

Appl. Phys. Lett. 43, 252 (1983); http://dx.doi.org/10.1063/1.94316 (3 pages) | Cited 8 times

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Information concerning pore microstructure of shaly rocks is of considerable relevance to petroleum exploration and production. Pore sizes and distributions within shaly samples have been determined by small angle neutron scattering. The data are indicative of a considerable spread of pore dimension, showing inhomogeneities with a range from 20 Å and greater. The cumulative pore volumes are compared with those derived from mercury intrusion porosimetry and nitrogen adsorption and desorption isotherms.
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91.60.-x Physical properties of rocks and minerals
61.05.F- Neutron diffraction and scattering
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
89.20.Bb Industrial and technological research and development

Epitaxial growth of Hg0.7Cd0.3Te by laser‐assisted deposition

J. T. Cheung

Appl. Phys. Lett. 43, 255 (1983); http://dx.doi.org/10.1063/1.94317 (3 pages) | Cited 13 times

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Epitaxial n‐type Hg0.7Cd0.3Te layers on (111)A CdTe substrates have been grown at 130 °C by laser‐assisted deposition. Mobility and carrier concentration values at 77 K range from 4000 to 7000 cm2/Vs and 0.7 to 3×1016 cm−3, respectively. Films can be converted to  p type after annealing at 410 °C. Implanted n+/p photodiodes have been demonstrated.
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68.55.-a Thin film structure and morphology
42.60.-v Laser optical systems: design and operation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Pulsed neodymium: yttrium aluminum garnet laser (532 nm) melting of crystalline silicon: Experiment and theory

D. H. Lowndes, R. F. Wood, and R. D. Westbrook

Appl. Phys. Lett. 43, 258 (1983); http://dx.doi.org/10.1063/1.94318 (3 pages) | Cited 19 times

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Time‐resolved reflectivity measurements have been used to determine both the time of onset‐of‐melting and the duration of melting resulting from frequency‐doubled neodymium: yttrium aluminum garnet (532 nm) pulsed‐laser irradiation of crystalline silicon. Substantially shorter surface melt durations were obtained with increasing energy density El than were reported earlier by others. Thermal melting model calculations, which take into account the temperature‐dependent optical and thermal properties of silicon, are in substantial agreement with the observed El dependence of the onset of melting and surface melt duration. Inclusion of intensity‐dependent absorption in the modeling further improves this agreement.
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64.70.D- Solid-liquid transitions
05.70.-a Thermodynamics
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

High‐speed GaAlAs/GaAs p‐i‐n photodiode on a semi‐insulating GaAs substrate

N. Bar‐Chaim, K. Y. Lau, I. Ury, and A. Yariv

Appl. Phys. Lett. 43, 261 (1983); http://dx.doi.org/10.1063/1.94319 (2 pages) | Cited 5 times

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A high‐speed, high‐responsivity GaAlAs/GaAs p‐i‐n photodiode has been fabricated on a GaAs semi‐insulating substrate. The 75‐μm‐diam photodiode has a 3‐dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate

M. Kimura, K. Egami, M. Kanamori, and T. Hamaguchi

Appl. Phys. Lett. 43, 263 (1983); http://dx.doi.org/10.1063/1.94320 (3 pages) | Cited 6 times

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Epitaxial film transfer, a new technique for producing a single crystal Si film with both large size and high quality on an insulating substrate, is demonstrated. The technique in which an epitaxial Si film is transferred to a secondary substrate by using three fundamental processes of epitaxial growth, bonding of two wafers, and substrate elimination, can produce a 2‐in. single crystal Si film as thin as 1.5 μm on a insulating substrate. Thickness variation can be controlled to ±0.06 μm across a 2‐in. wafer. An epitaxial Si film is transferred without significant degradation in quality although a fine film waving exists.
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68.55.-a Thin film structure and morphology

Hall mobility in undoped microcrystalline Si:H,Cl films

V. Augelli, R. Murri, and T. Ligonzo

Appl. Phys. Lett. 43, 266 (1983); http://dx.doi.org/10.1063/1.94321 (2 pages)

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The Hall mobility in undoped microcrystalline Si:H, Cl films has been measured in the temperature range 130<T<300 K. The dependence of μH on the temperature clearly evidences two different transport mechanisms. Above T0≂200 K, the Hall mobility has an activation energy of about 0.3 eV, while below T0 it is practically temperature independent.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Fr Low-field transport and mobility; piezoresistance

Anodic bonding of gallium arsenide to glass

Bertil Hök, Chantal Dubon, and Christer Ovrén

Appl. Phys. Lett. 43, 267 (1983); http://dx.doi.org/10.1063/1.94322 (3 pages) | Cited 1 time

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We describe a modified anodic bonding technique for hermetic sealing between GaAs and glass, the modification being called for by the formation of a nonadherent oxide layer during the bonding process. We show that this can be avoided by prebaking the glass and performing the bonding operation in a reducing atmosphere. With this technique, strong, hermetic seals can be produced. Parameter dependence has been studied theoretically by solving the continuity equation for a one‐dimensional model of the experimental situation. Experimentally, the bonds were evaluated with a number of methods, giving support for a model consisting of a high‐field, sodium‐depleted zone in the interface region during bond formation. The described technique is of particular interest for optoelectronic devices requiring transparent and hermetic seals.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Md Surface thermodynamics, surface energies
85.60.-q Optoelectronic devices

Photoluminescence associated with thermally induced microdefects in Czochralski‐grown silicon crystals

Michio Tajima, U. Gösele, J. Weber, and R. Sauer

Appl. Phys. Lett. 43, 270 (1983); http://dx.doi.org/10.1063/1.94323 (3 pages) | Cited 19 times

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Photoluminescence in the photon energy range 0.7–1.2 eV is investigated for commercial Czochralski‐grown Si crystals subjected to isothermal annealing at 650 °C for 1–450 h. A strong and sharp line appears at 0.903 eV at certain annealing stages, regardless of the sources and the conductivity type of starting materials. The intensity dependence of the 0.903‐eV line on the annealing time coincides with the concentration dependence expected for Si self‐interstitials emitted during the oxygen precipitation process. This is experimental evidence that microdefects responsible for this line are correlated with Si self‐interstitials.
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81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.jd Vacancies
61.72.jj Interstitials
78.40.Fy Semiconductors

Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane

M. Meunier, T. R. Gattuso, D. Adler, and J. S. Haggerty

Appl. Phys. Lett. 43, 273 (1983); http://dx.doi.org/10.1063/1.94324 (3 pages) | Cited 25 times

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The electronic properties of hydrogenated amorphous silicon (a‐Si:H) produced by laser‐induced chemical vapor deposition of silane are reported. Spin density and both optical gap and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported. Film properties are superior to those produced by conventional chemical vapor deposition of silane.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.43.Fs Glasses
61.43.-j Disordered solids

New thermal‐neutron solid‐state electronic detector based on HgI2 single crystals

M. Melamud, Z. Burshtein, A. Levi, and M. M. Schieber

Appl. Phys. Lett. 43, 275 (1983); http://dx.doi.org/10.1063/1.94325 (3 pages) | Cited 1 time

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The use of HgI2 as a thermal‐neutron solid‐state electronic detector, in particular its application for neutron diffractometry, is demonstrated for the first time. A single crystal HgI2 detector is used to count prompt gamma emissions (0.2–5 MeV) from (n,γ) nuclear reactions in Gd or Cd foils. The neutron counting efficiency depends on the HgI2 detector thickness. For a 1‐mm thickness of HgI2 the efficiency is about 10% compared to the efficiency of a 10BF3 gas detector.
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29.40.Wk Solid-state detectors
29.30.Hs Neutron spectroscopy
29.30.Kv X- and γ-ray spectroscopy
78.70.-g Interactions of particles and radiation with matter

Long‐lived GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy

C. Lindström, T. L. Paoli, R. D. Burnham, D. R. Scifres, and W. Streifer

Appl. Phys. Lett. 43, 278 (1983); http://dx.doi.org/10.1063/1.94301 (3 pages) | Cited 4 times

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Proton‐defined stripe geometry GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy have been operated continuously at 5 mW/facet for over 1800 h at 70 °C and over 1100 h at 100 °C. With a 0.7‐eV activation energy, these times extrapolate respectively to 11.7 and 47.9 years of continuous operation at 20 °C. In the present mode of degradation, we estimate that the mean time to double the initial operating current is greater than 138 years at 20 °C.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Jj Ion and electron beam-assisted deposition; ion plating
42.55.Px Semiconductor lasers; laser diodes
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