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15 Aug 1983

Volume 43, Issue 4, pp. 327-398

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Optical loss increase of phosphor‐doped silica fiber at high temperature in the long wavelength region

Naoshi Uesugi, Tsuneo Kuwabara, Yahei Koyamada, Yukinori Ishida, and Naoya Uchida

Appl. Phys. Lett. 43, 327 (1983); http://dx.doi.org/10.1063/1.94343 (2 pages) | Cited 9 times

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The wavelength‐dependent loss increase in the long wavelength region is revealed for phosphor‐doped silica fiber at a high temperature around 200 °C. The loss increases around 1.3 μm and becomes larger for longer wavelength regions. The loss increase is suppressed by reducing P2O5 dopant concentration. The overtone absorption of Ge–OH at 1.41 μm as well as that of Si–OH at 1.39 μm also increases markedly. The possible origin of the loss increase is discussed.
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42.81.-i Fiber optics
42.25.Lc Birefringence

Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers

K. Y. Lau, I. Ury, N. Bar‐Chaim, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 43, 329 (1983); http://dx.doi.org/10.1063/1.94344 (3 pages) | Cited 2 times

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It is demonstrated experimentally that the intrinsic modulation response of injection lasers can be modified by reducing mirror reflectivities, which leads to suppression of relaxation oscillation resonance and a reduction of nonlinear distortions up to multi‐GHz frequencies. A totally flat response with a 3‐dB bandwidth of 5 GHz was obtained using antireflection coated buried heterostructure lasers fabricated on a semi‐insulating substrate. Harmonic distortions were below 40 dB within the entire 3‐dB bandwidth. These results are in accord with theoretical predictions based on an analysis which include the effects of superluminescence in the laser cavity.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Internal photoemission from quantum well heterojunction superlattices by phononless free‐carrier absorption

L. C. Chiu, J. S. Smith, S. Margalit, and A. Yariv

Appl. Phys. Lett. 43, 331 (1983); http://dx.doi.org/10.1063/1.94345 (2 pages) | Cited 6 times

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The possibility of phononless free‐carrier absorption in quantum well heterojunction superlattices was investigated. Order of magnitude calculation showed that the absorption coefficient was significantly enhanced over the phonon‐assisted process. Important aspects of the enhancement in the design of infrared photodetectors are discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Dp General theory, scattering mechanisms
81.65.-b Surface treatments

Remote sensing applications of pulsed photothermal radiometry

A. C. Tam and B. Sullivan

Appl. Phys. Lett. 43, 333 (1983); http://dx.doi.org/10.1063/1.94346 (3 pages) | Cited 72 times

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The technique of pulsed photothermal radiometry (PPTR) (i.e., detection of the transient infrared thermal radiation from a condensed matter sample heated by a short‐pulsed radiation) is useful for single‐ended remote sensing applications. We demonstrate for the first time such applications for spectroscopic detection, measurement of absolute absorption coefficients in opaque materials, and sensing of dimensions or thermal properties in inhomogeneous materials. Theory of the PPTR technique in the simple case of a semi‐infinite homogeneous material is described.
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07.60.Dq Photometers, radiometers, and colorimeters
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Oxygen vacancies in lithium niobate

K. L. Sweeney and L. E. Halliburton

Appl. Phys. Lett. 43, 336 (1983); http://dx.doi.org/10.1063/1.94347 (3 pages) | Cited 71 times

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Optical absorption peaks at 760 and 500 nm in LiNbO3 are assigned to oxygen vacancies containing one and two electrons, respectively. The 500‐nm band appears after annealing above approximately 500 °C in a vacuum, i.e., a reducing atmosphere, and continues to grow with increasing anneal temperature. Optical bleaching near 77 K destroys the band at 500 nm and produces both a band at 760 nm and a Nb4+ electron spin resonance spectrum. The spectral dependence of the bleaching light required to convert the 500‐nm band to the 760‐nm band is determined.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
76.30.Mi Color centers and other defects
61.72.jn Color centers

Mode‐locked semiconductor lasers with gateable output and electrically controllable optical absorber

W. T. Tsang, N. A. Olsson, and R. A. Logan

Appl. Phys. Lett. 43, 339 (1983); http://dx.doi.org/10.1063/1.94348 (3 pages) | Cited 4 times

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We proposed and demonstrated for the first time an electronically gateable mode‐locked semiconductor laser capable of coding information on the picosecond optical pulses emitted. We further introduced an electronically controllable optical absorber which made it possible to electrically control the optical performance of the mode‐locked semiconductor laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.-e Optical elements, devices, and systems
84.30.-r Electronic circuits

Discovery of dc switching of a bistable boundary layer liquid crystal display

Robert B. Meyer and R. N. Thurston

Appl. Phys. Lett. 43, 342 (1983); http://dx.doi.org/10.1063/1.94330 (3 pages) | Cited 12 times

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A liquid crystal display based on bistable boundary layer configurations has been shown previously [Cheng et al., Appl. Phys. Lett. 40, 1007 (1982)] to have memory, adequate contrast, low‐voltage operation, and a bistability that is relatively insensitive to changes in material properties, cell parameters, and temperature. We report here the discovery that a short, low voltage dc pulse switches the display into one or the other of its bistable states, depending on the polarity of the pulse. Experiments suggest that a storage display of this type having n lines of pels can be rewritten in (50+20n) milliseconds using voltages of less than 2 V. Consequently, a large area, low power, nonrefreshed display is possible.
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85.60.Pg Display systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Monolithic integration of a double heterostructure light‐emitting diode and a field‐effect transistor amplifier using molecular beam grown AlGaAs/GaAs

O. Wada, T. Sanada, H. Hamaguchi, T. Fujii, and T. Sakurai

Appl. Phys. Lett. 43, 345 (1983); http://dx.doi.org/10.1063/1.94331 (3 pages) | Cited 1 time

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A surface emitting AlGaAs/GaAs double heterostructure light‐emitting diode (LED) and an amplifier composed of three GaAs field‐effect transistors have been first integrated on a single GaAs substrate. Molecular beam epitaxy has been extensively used to grow a six‐layer heterostructure involving a high resistivity AlGaAs layer for electronic isolation. Input voltage to output optical power transfer characteristics are presented. It has also been shown that this integrated device successfully operates at the speed limited by the LED rise time, 7 ns in the present case.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Tv Field effect devices
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

XeCl excimer laser excited by longitudinal discharge

Zhenzhuo Zhou, Yongjian Zeng, and Mingxin Qiu

Appl. Phys. Lett. 43, 347 (1983); http://dx.doi.org/10.1063/1.94332 (3 pages) | Cited 6 times

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XeCl excimer laser excited by longitudinal gas discharge is reported. The main characteristics of the laser output and the laser energy in dependence of the operating parameters were measured. The laser pulse duration was 35 ns and the maximum laser energy 317 μJ with improvement by preionization.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
51.70.+f Optical and dielectric properties

Thermoelastic wave generation by resistive heating in silicon

Steven E. Deggendorf and Richard M. White

Appl. Phys. Lett. 43, 350 (1983); http://dx.doi.org/10.1063/1.94333 (2 pages)

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We report the piezoelectric detection and thermoelastic signals resulting from resistive heating within a diffused resistor and commercial packaged transistor. cw and pulse experiments at 5 V and 300 kHz, as well as 5‐V 10‐MHz mixing experiments, result in transducer outputs in the 25 μV–1 mV range. Theoretical values are in good agreement with experimental findings.
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65.40.De Thermal expansion; thermomechanical effects
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
62.30.+d Mechanical and elastic waves; vibrations
43.38.Fx Piezoelectric and ferroelectric transducers

Picosecond air breakdown studies at 0.53 μm

William E. Williams, M. J. Soileau, and Eric W. Van Stryland

Appl. Phys. Lett. 43, 352 (1983); http://dx.doi.org/10.1063/1.94334 (3 pages) | Cited 12 times

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The laser induced breakdown thresholds of laboratory air at 0.53 μm were measured for pulses varying from 30 to 140 ps for a variety of focal spot sizes. The breakdown threshold fields were found to be proportional to 1/(tp)1/2, where tp is the laser pulse width. Comparison with an earlier work at 1.06 μm under similar conditions indicates that the breakdown thresholds are higher at 0.53 than at 1.06 μm. However, this increase falls short of the λ−2 dependence exhibited by cascade ionization.
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51.70.+f Optical and dielectric properties
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Thermal wave remote and nondestructive inspection of polymers

G. Busse and P. Eyerer

Appl. Phys. Lett. 43, 355 (1983); http://dx.doi.org/10.1063/1.94335 (3 pages) | Cited 25 times

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Optically generated thermal waves propagating in various kinds of polymers (adhesives, coatings, fiber reinforced polybutyleneterephthalate, oriented polyethylene) are analyzed by photothermal detection. Some results from this remote technique are difficult to obtain by conventional methods.
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05.70.Ce Thermodynamic functions and equations of state
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
81.70.-q Methods of materials testing and analysis

The amorphous phase and surface mechanical properties of 304 stainless steel implanted with Ti and C

D. M. Follstaedt, F. G. Yost, L. E. Pope, S. T. Picraux, and J. A. Knapp

Appl. Phys. Lett. 43, 358 (1983); http://dx.doi.org/10.1063/1.94336 (3 pages) | Cited 20 times

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The wear tracks resulting from unlubricated pin‐on‐disc tests of 304 stainless steel which was ion implanted with Ti and C have been examined with transmission electron microscopy, scanning electron microscopy, and energy dispersive x‐ray spectroscopy. At light pin loads, where the maximum wear depths were reduced by the implantation from ∼1.5 to ∼0.15 μm, nearly continuous amorphous layers containing Ti were found to exist across the wear tracks. However, the amorphous phase was not observed in deeper wear tracks (≳1 μm) produced by higher loads. This correlation of the presence of the amorphous layer with reduced wear demonstrates that this layer is responsible for the reduction in wear produced by implantation of Ti and C.
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81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
61.72.U- Doping and impurity implantation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Rectification and harmonic generation with metal‐insulator‐metal diodes in the mid‐infrared

H. H. Klingenberg and C. O. Weiss

Appl. Phys. Lett. 43, 361 (1983); http://dx.doi.org/10.1063/1.94337 (3 pages) | Cited 4 times

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Different current‐voltage characteristics were found for diodes with Ni and Nb substrates. The diode bias dependence of the rectified signals at 30, 88, and 118 THz (CO2, He‐Ne, color‐center laser) is found to correspond to the dc characteristics in both cases. Harmonic mixing between CO2 and He‐Ne laser, CO2 and color‐center laser respectively, was obtained for one of these characteristics only.
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73.40.Rw Metal-insulator-metal structures
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
73.40.Jn Metal-to-metal contacts
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Pulsed ion beam technique for measuring diffusion coefficient of a slow diffusant in polymers

T. Venkatesan, D. Edelson, and W. L. Brown

Appl. Phys. Lett. 43, 364 (1983); http://dx.doi.org/10.1063/1.94338 (3 pages) | Cited 7 times

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The determination of diffusion coefficients (D) of small molecules in a polymer for D below 10−10 cm2 s−1 is a difficult measurement using conventional self‐supporting polymer membrane techniques. We propose a new method for obtaining similar information by irradiating a polymer with a pulsed ion beam and studying the evolving gaseous products. Product molecules that are not limited by the rate of their production in the film tend to exhibit diffusion limited dynamical characteristics in their transient evolution from the surface. By numerically modeling the diffusion problem we can extract diffusion coefficients from the data. Since thin films (<1 μm) can be used in these experiments, diffusion coefficients less than 10−10 cm2 s−1, typical of many molecules in polymers, can be measured with ease.
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66.30.-h Diffusion in solids
68.60.-p Physical properties of thin films, nonelectronic
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Whisker growth and cone formation on metal surfaces under ion bombardment

G. K. Wehner

Appl. Phys. Lett. 43, 366 (1983); http://dx.doi.org/10.1063/1.94339 (2 pages) | Cited 10 times

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We were able to show experimentally that the seed metals which can cause cone development on ion bombarded metal targets need not to have a lower sputtering yield as widely believed but a higher melting point. By lowering the bombarding ion energy to near sputtering threshold values (<100 eV) one observes the growth of genuine single crystal whiskers which point in all directions not related to the direction of ion incidence. We are now convinced that (intentional or unintentional) seed cones are the result of an interplay among whisker growth, surface movement of atoms, and the effects of sputtering.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells

T. D. Moustakas, H. P. Maruska, R. Friedman, and M. Hicks

Appl. Phys. Lett. 43, 368 (1983); http://dx.doi.org/10.1063/1.94340 (3 pages) | Cited 6 times

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Intrinsic amorphous silicon films are normally slightly n type. As a result, in n+‐i‐metal and n+‐i‐p+ solar cell structures the major potential barrier is at the i‐m or i‐p+ interfaces. Low levels of boron compensation of the i layer move the Fermi level down to midgap. Further increases in boron render the i layer slightly p type, and move the major barrier to the i‐n+ interface. Therefore, it becomes possible to tailor the level of boron doping throughout the i layer so as to achieve high electric fields in all regions of the layer, and thus maximize the short circuit current.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
61.72.U- Doping and impurity implantation

Influence of doping on the liquid‐amorphous transition induced by picosecond laser irradiation of Si

S. U. Campisano, P. Baeri, Jing‐Ping Zhang, E. Rimini, and A. M. Malvezzi

Appl. Phys. Lett. 43, 370 (1983); http://dx.doi.org/10.1063/1.94341 (3 pages) | Cited 6 times

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The effect of Bi doping on the quench of amorphous Si directly from the melt during 30‐ps, 0.53‐μm laser irradiation has been studied. The amorphous thickness (45 nm) in Bi implanted samples was observed to increase 50% over the corresponding undoped samples (25 nm). No change in the Bi profile was detected upon amorphization.
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61.72.U- Doping and impurity implantation
61.43.Fs Glasses
61.43.-j Disordered solids
81.40.Gh Other heat and thermomechanical treatments
64.70.Ja Liquid-liquid transitions

Measurement of compositional inhomogeneity of liquid phase epitaxial InGaPAs

P. E. Brunemeier, T. J. Roth, N. Holonyak, and G. E. Stillman

Appl. Phys. Lett. 43, 373 (1983); http://dx.doi.org/10.1063/1.94342 (3 pages) | Cited 3 times

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Precision x‐ray measurements have been performed on the compositional inhomogeneity that occurs during the initial part of the liquid phase epitaxial (LPE) growth of InGaPAs on InP substrates from step‐cooled solutions. Double crystal x‐ray diffraction and absorption data are presented on epitaxial layers grown short term (30 ms) and long term (1–2 min). These data are used to determine the difference in alloy composition of the two growth methods. This study indicates that long‐term LPE growth of quaternary alloys is inhomogeneous, while short‐term growth can be made uniform.
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68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

cw laser‐annealing behavior of Se+‐implanted InP investigated by ellipsometry

M. Mizuta and J. L. Merz

Appl. Phys. Lett. 43, 375 (1983); http://dx.doi.org/10.1063/1.94349 (3 pages) | Cited 1 time

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Damage removal of Se+‐implanted InP after cw Ar+ laser annealing has been monitored by measurement of the optical extinction coefficient k. A gradual decrease in k as a function of laser power is observed for room‐temperature ion‐implanted InP samples, compared to a sharp decrease in k for ion‐implanted Si. These data and electrical measurements indicate that the ion‐implantation damage removal process for InP is more complex than for Si.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
42.60.-v Laser optical systems: design and operation
07.60.Fs Polarimeters and ellipsometers

High‐resistivity (>105 Ω cm) InP layers by liquid phase epitaxy

E. A. Rezek, L. M. Zinkiewicz, and H. D. Law

Appl. Phys. Lett. 43, 378 (1983); http://dx.doi.org/10.1063/1.94350 (3 pages) | Cited 6 times

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Experimental conditions suitable for the liquid phase epitaxial growth of InP epilayers with resistivities >105 Ω cm have been investigated. It has been found that the resistivities of Fe‐doped InP layers are, in fact, less than the resistivity of an undoped InP control sample. Furthermore, the resistivity decreases monotonically as more Fe dopant is added to the melt. When Co is used as a dopant, the same growth conditions used for the Fe‐doped InP produce InP epilayers with ρ>105 Ω cm. High‐resistivity InP layers have been reproducibly grown with 1.0 and 0.6 at. % of Co added to the melt. The high‐resistivity InP epilayers have been grown at various temperatures between 715 and 630 °C.
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68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.U- Doping and impurity implantation

Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp

A. N. M. Masum Choudhury, K. Tabatabaie‐Alavi, C. G. Fonstad, and J. C. Gelpey

Appl. Phys. Lett. 43, 381 (1983); http://dx.doi.org/10.1063/1.94351 (3 pages) | Cited 24 times

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A 100‐kW water‐walled dc argon arc lamp has been used for the first time to post anneal ion‐implanted InP samples. Temperatures as high as 925 °C and short cycle times (3 and 10 s) are used for the process. Se and Be were ion implanted into room temperature and hot substrate InP samples. A sputter deposited SiO2 layer, 120 mm thick, covering all wafer surfaces was used as an encapsulant during the lamp anneal. Hot substrate Se implants (400 keV, 1.8×1014 cm−2, 200 °C) show an average mobility of 1415 cm2/Vs and an activation of ∼63%, and room‐temperature Be implants (50 keV, 3.35×1013 cm−2 and 150 keV, 5.74×1013 cm−2) an average mobility of 88 cm2/Vs and activation of ∼45%. This annealing technique is straightforward and gives activations and mobilities comparable to, or better than, the best furnace anneals with sharp profiles and simplified surface encapsulation.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Inductive monopole detector employing planar high order superconducting gradiometer coils

C. D. Tesche, C. C. Chi, C. C. Tsuei, and P. Chaudhari

Appl. Phys. Lett. 43, 384 (1983); http://dx.doi.org/10.1063/1.94352 (3 pages) | Cited 17 times

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The characteristics and performance of a family of high‐order planar gradiometer detectors for inductive detection of magnetic monopoles are discussed. Conventional superconducting magnetometers used for monopole detection must be operated in an extremely stable, low field environment. This places a severe restriction on the cross‐sectional area of such detectors. However, planar gradiometer detectors permit the use of relatively large area detectors in coincidence without requiring a corresponding increase in the stability of the ambient field.
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85.25.-j Superconducting devices
29.40.-n Radiation detectors

Squeezable electron tunneling junctions

John Moreland, S. Alexander, M. Cox, R. Sonnenfeld, and P. K. Hansma

Appl. Phys. Lett. 43, 387 (1983); http://dx.doi.org/10.1063/1.94353 (2 pages) | Cited 25 times

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We report a versatile new technique for constructing electron tunneling junctions with mechanically adjusted artificial barriers. I‐V curves are presented for tunneling between Ag electrodes with vacuum, gas, liquid, or solid in the barrier. An energy gap is apparent in the measured I‐V curve when tunneling occurs between superconducting Pb electrodes.
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73.40.Rw Metal-insulator-metal structures
74.78.-w Superconducting films and low-dimensional structures
73.40.Gk Tunneling
74.50.+r Tunneling phenomena; Josephson effects

Large uniaxial magnetic anisotropy in amorphous Tb‐Fe evaporated thin films

H. Kobayashi, T. Ono, A. Tsushima, and T. Suzuki

Appl. Phys. Lett. 43, 389 (1983); http://dx.doi.org/10.1063/1.94354 (2 pages) | Cited 15 times

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Magnetic properties of amorphous Tb‐Fe alloy films have been investigated for magneto‐optic memory media applications. The perpendicular magnetic anisotropy, saturation magnetization, and Curie temperature were investigated in the samples deposited by vacuum evaporation at different substrate temperatures Ts. A very large value (2×107 erg/cc) of the uniaxial anisotropy constant Ku was found in the samples deposited at a high substrate temperature (400 °C), and it was found also that the saturation magnetization and Curie temperature exhibit a strong dependence on substrate temperature during the evaporation process.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.30.Gw Magnetic anisotropy
75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
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