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1 Sep 1983

Volume 43, Issue 5, pp. 401-510

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Wavelength multiplexing of 1.31‐μm InGaAsP buried crescent laser arrays

J. P. van der Ziel, H. Temkin, and R. A. Logan

Appl. Phys. Lett. 43, 401 (1983); http://dx.doi.org/10.1063/1.94394 (3 pages) | Cited 1 time

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A monolithic array of five noninteracting buried crescent lasers has been optically multiplexed using an external cavity with a grating as a dispersive element. The lasers have a center to center separation of 8 μm, and with an external cavity consisting of a 4‐mm focal length lens and a 600‐line/mm grating used in second order, the lasers emit at ≊1.31 μm in essentially single longitudinal modes separated by 19.6 Å. Single longitudinal mode operation has also been obtained using a cleaved coupled cavity (C3) laser array. In this case the dominant mode is determined by the coherent interference of the mode spectrum of the two subcavities.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Selective low‐temperature mass transport in InGaAsP/InP lasers

A. Hasson, L. C. Chiu, T. R. Chen, U. Koren, Z. Rav‐Noy, K. L. Yu, S. Margalit, and A. Yariv

Appl. Phys. Lett. 43, 403 (1983); http://dx.doi.org/10.1063/1.94395 (3 pages) | Cited 4 times

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A low‐temperature mass transport process in InP was investigated. Mass transport of InP was achieved at 570–600 °C in a closed ampoule using iodine or InI as a catalytic transporting agent. Accomplishing the mass transport process at lower temperature has eliminated the problem of thermal etching and resulted in lasers with higher T0.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments
66.90.+r Other topics in nonelectronic transport properties of condensed matter (restricted to new topics in section 66)

Efficient femtosecond optical Kerr shutter

J. Etchepare, G. Grillon, A. Migus, J. L. Martin, and G. Hamoniaux

Appl. Phys. Lett. 43, 406 (1983); http://dx.doi.org/10.1063/1.94396 (2 pages) | Cited 8 times

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Conjugated molecules, with large optical nonlinearities, are tested as materials usable for femtosecond optical Kerr shutter technique. With β‐carotene, in acetone solution, we have achieved responses limited by the 100‐fs width of the optical pulses and characterized by a resolution better than 1 ps with a dynamic range of 100.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
78.20.Ls Magneto-optical effects

Broadly tunable mode‐locked HgCdTe lasers

R. S. Putnam, M. M. Salour, and T. C. Harman

Appl. Phys. Lett. 43, 408 (1983); http://dx.doi.org/10.1063/1.94397 (2 pages) | Cited 5 times

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We report tunable cw mode‐locked laser action from synchronously pumped HgCdTe lasers. 4–8‐μm‐thick liquid phase expitaxial layers lasing at λ=1.2 and λ=1.73–2.0 μm are longitudinally pumped by a neodymium: yttrium aluminum garret (Nd:YAG) laser. Peak output powers of 50 W using a chopped pump beam, and a cw mode‐locked average output power of 5.6 mW, have been achieved at a wavelength of 1.2 μm. Nearly bandwidth‐limited pulses of 6‐ps duration have also been obtained. Tuning from λ=1.82 to 2.0 μm via the Burstein–Moss shift has been accomplished on a single epilayer by varying the loss in the external cavity.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Influence of an external cavity on semiconductor laser phase noise

M. Tamburrini, P. Spano, and S. Piazzolla

Appl. Phys. Lett. 43, 410 (1983); http://dx.doi.org/10.1063/1.94398 (3 pages) | Cited 5 times

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Investigation of phase noise in semiconductor lasers allows one to understand the physical processes that influence both the width and the shape of the emission line. Furthermore, the limitations associated with phase noise have to be taken into account when semiconductor lasers are employed in coherent optical communication systems. In this letter we report phase‐noise measurements on single‐mode semiconductor lasers in the presence of optical feedback. We are able to observe, besides the expected linewidth reduction, a peculiar behavior in the high‐frequency region not yet reported in the literature, strongly dependent on the external cavity length.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Improved welding penetration of a 10‐kW industrial laser

A. S. Kaye, A. G. Delph, E. Hanley, and C. J. Nicholson

Appl. Phys. Lett. 43, 412 (1983); http://dx.doi.org/10.1063/1.94371 (3 pages) | Cited 3 times

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The weld penetration of a multikilowatt CO2 laser has been increased by reducing the laser beam divergence. This near diffraction limited laser has now demonstrated that CO2 lasers are capable of full‐penetration welding of 1‐in. steel with typically 11 kW on the work. Bead‐on‐plate tests combined with previous data indicate that the penetration scales with laser power as P0.8.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
79.20.Ds Laser-beam impact phenomena
42.62.-b Laser applications

Photoluminescence of GaAs‐AlxGa1−xAs multiple quantum well structure under high excitations

Z. Y. Xu, V. G. Kreismanis, and C. L. Tang

Appl. Phys. Lett. 43, 415 (1983); http://dx.doi.org/10.1063/1.94372 (3 pages) | Cited 28 times

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Allowed transitions between the n=1, 2, and 3 subbands of the conduction and valence bands of a multiple quantum well heterostructure of GaAs‐Al0.6Ga0.4As are seen in spontaneous emission under high excitations. The observed peaks agree very well with the calculated locations of the peaks when the finite depth of the potential well and the nonparabolicity of the conduction band are taken into account. The same basic features are seen under cw or picosecond pulse excitation and at room temperature, 77 K, or 4.2 K.
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78.40.Fy Semiconductors
78.45.+h Stimulated emission

Lasing on the B→X band of cadmium monoiodide (CdI) and 114CdI in a UV‐preionized, transverse discharge

D. P. Greene and J. G. Eden

Appl. Phys. Lett. 43, 418 (1983); http://dx.doi.org/10.1063/1.94373 (3 pages) | Cited 8 times

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Stimulated emission on the B→X band of CdI and isotopically enriched (98.6%) 114 CdI has been observed in a UV‐preionized, transverse discharge device with a gain length of 50 cm. For natural CdI, the laser energy is distributed among several transitions between 656 and 658 nm. The isotopically enriched 114CdI spectrum, in contrast, is dominated by a single line at 657.1 nm, which contains >50% of the output energy. With a high‐Q optical cavity, output energies >10 μJ have been measured in a 85‐ns full width at half‐maximum (FWHM) pulse.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Kf Visible spectra
52.80.-s Electric discharges

Control of mutual phase locking of monolithically integrated semiconductor lasers

E. Kapon, J. Katz, C. Lindsey, S. Margalit, and A. Yariv

Appl. Phys. Lett. 43, 421 (1983); http://dx.doi.org/10.1063/1.94374 (3 pages) | Cited 10 times

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The mutual coherence of two coupled semiconductor lasers is investigated experimentally. It is demonstrated that by varying the gain in the overlap region, the degree of phase coherence can be continuously controlled. The quantitative characterization of the degree of phase coherence by fringe visibility is demonstrated.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Double ion exchanged chirp grating lens in lithium niobate waveguides

Christopher Warren, Siamak Forouhar, William S. C. Chang, and S. K. Yao

Appl. Phys. Lett. 43, 424 (1983); http://dx.doi.org/10.1063/1.94375 (3 pages) | Cited 21 times

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An integrated optical chirped grating lens has been produced which exhibits high throughput efficiency (75%) and large angular field of view (3°). The waveguide substrate is x‐cut lithium niobate, and ion exchange in benzoic acid is the method used for making the lens and the waveguide.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

Twisted double‐heterostructure GaAs‐(AlGa)As laser

Takashi Sugino and Shyh Wang

Appl. Phys. Lett. 43, 427 (1983); http://dx.doi.org/10.1063/1.94376 (3 pages) | Cited 4 times

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A novel laser structure in which a terraced substrate laser and a channeled substrate laser are connected is fabricated. The active layer of the composite cavity is twisted in the junction area between the two laser cavities. Internal reflection and polarization change occur in the twisted region. A built‐in refractive index variation is formed by the terraced substrate and the channeled substrate structures. Remarkable characteristics of the laser are a low threshold current of 40 mA, a stable fundamental transverse‐mode and single longitudinal‐mode oscillation, and a wavelength locking over a temperature range of more than 6 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Fabrication of germanium‐coated nickel hollow waveguides for infrared transmission

Mitsunobu Miyagi, Akihito Hongo, Yoshizo Aizawa, and Shojiro Kawakami

Appl. Phys. Lett. 43, 430 (1983); http://dx.doi.org/10.1063/1.94377 (3 pages) | Cited 35 times

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Circular hollow nickel waveguides with an inner germanium layer are fabricated by using a method based on rf sputtering, plating, and etching techniques. Transmission losses less than 0.5 dB are achieved including launching losses for straight waveguides with 1.5 mmϕ×1 m at 10.6‐μm wavelength. Bending losses of the waveguides are also examined.
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42.79.Gn Optical waveguides and couplers
42.62.-b Laser applications
84.40.Az Waveguides, transmission lines, striplines

Transverse second‐order mode oscillations in a twin‐stripe laser with asymmetric injection currents

S. Mukai, H. Yajima, S. Uekusa, and A. Sone

Appl. Phys. Lett. 43, 432 (1983); http://dx.doi.org/10.1063/1.94378 (3 pages) | Cited 7 times

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Transverse second‐order mode oscillations in asymmetrically pumped twin‐stripe lasers are described. Both far‐field patterns and near‐field patterns have two peaks, and a stronger peak appears on the weakly pumped side. The dependence of light intensity in one peak of the far‐field pattern on the current into one stripe shows threshold characteristics. On application of rectangular pulse to one stripe, switching from one peak to the other occurs within 5 ns.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Optical stability of narrow stripe, proton‐isolated AlGaAs double heterostructure lasers with gain guiding

H. W. M. Salemink and J. W. M. Biesterbos

Appl. Phys. Lett. 43, 434 (1983); http://dx.doi.org/10.1063/1.94379 (3 pages) | Cited 1 time

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Optically stable, proton‐isolated, gain‐guided (AlGa)As double heterostructure injection lasers are described. A narrow stripe width (3.5 μm) and a very shallow implantation are employed (1.3 μm from the active layer); this results in a cosh−2‐like optical mode of ∼9.0‐μm full width at half‐maximum. The far‐field profiles possess strong sidelobes at high optical output power. The optical material loss coefficient and the antiguiding parameter are derived from the measured far‐field profiles, using the theory of gain guiding. Key parameters in the description of the optical mode distribution are calculated for several values of output power.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Ultrasonic modulation of persistent spectral holes in crystals

H. Lengfellner, T. R. Gosnell, R. W. Tkach, and A. J. Sievers

Appl. Phys. Lett. 43, 437 (1983); http://dx.doi.org/10.1063/1.94380 (3 pages) | Cited 7 times

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Persistent IR spectral holes in KI@B:ReO−4 and in RbI@B:ReO−4 crystals have been both modulated and erased with 10‐MHz ultrasound. This mechanical modulation of the hole depth leads to a new phase‐insensitive optical detector for ultrasonic waves in solids.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Hot‐electron energy deposition around unsupported laser targets

K. Eidmann, A. Maaswinkel, R. Sigel, S. Witkowski, F. Amiranoff, R. Fabbro, J. D. Hares, and J. D. Kilkenny

Appl. Phys. Lett. 43, 440 (1983); http://dx.doi.org/10.1063/1.94381 (3 pages) | Cited 6 times

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Free‐falling spheres, released by a simple mechanism, are used as laser targets. Hot‐electron energy transport upon one‐sided irradiation with 300‐ps iodine laser pulses (6×1015 W cm−2) is studied by various methods, including x‐ray pinhole photography and time‐resolved shadowgraphy. Spatial energy deposition is consistent with hot‐electron spreading in the presence of self‐generated magnetic fields, as suggested by recent experiments and simulations. The insensitivity of the results to the presence of a supporting stalk is attributed to inductive decoupling of the target. Free‐falling targets open the possibility of highly symmetric implosion experiments.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.80.Vp Discharge in vacuum

Spatially resolved Kα spectra of two‐structure plasmas in a vacuum spark

Shigeru Morita and Junji Fujita

Appl. Phys. Lett. 43, 443 (1983); http://dx.doi.org/10.1063/1.94382 (3 pages) | Cited 10 times

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Spatially resolved Fe Kα spectra in the wavelength range of 1.7–2.0 Å (FeII‐XXVI) and 1.91–1.95 Å (FeII‐XIX) are first observed in a single shot with low‐resolution Johansson and high‐resolution Johann type crystal spectrometers, respectively. The spectra show the evident proof that the vacuum spark plasma has two different structures. One is a thermalized point plasma (≲10 μm) with high temperature (Te ∼2 keV) and high density (ne ∼1021 cm−3). The spectrum contains x‐ray lines from FeXXIII‐XXVI. The other is an extended plasma (∼3 mm) associated with nonthermal electrons, where the region of intense emission of Kα lines from FeIII‐XX shifts toward the cathode with the increase of the ionic charge.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
32.30.Rj X-ray spectra
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Spatial resolution of thermal wave microscopes

L. J. Inglehart, K. R. Grice, L. D. Favro, P. K. Kuo, and R. L. Thomas

Appl. Phys. Lett. 43, 446 (1983); http://dx.doi.org/10.1063/1.94383 (3 pages) | Cited 24 times

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It is demonstrated theoretically and confirmed experimentally that the intrinsic spatial resolution of a thermal wave microscope in the extreme near field limit is independent of thermal wavelength and is determined by the depth of the thermal scatterer beneath the surface of the specimen.
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68.37.-d Microscopy of surfaces, interfaces, and thin films
07.20.-n Thermal instruments and apparatus
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Kinetics of interstitial supersaturation during oxidation of silicon

S. M. Hu

Appl. Phys. Lett. 43, 449 (1983); http://dx.doi.org/10.1063/1.94384 (3 pages) | Cited 18 times

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The kinetics of the supersaturation of self‐interstitials during the thermal oxidation of silicon is reexamined by considering a finite diffusivity of these interstitials. The rate of interstitial generation is assumed to be proportional to the rate of oxidation, and the rate of surface annihilation is assumed to be a first order reaction. The result from an analytical solution shows that within a reasonable oxidation time span, a suitable power‐law kinetics is obtained, with an exponent that falls within the range of most of the reported experimental values.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.Nn Stacking faults and other planar or extended defects
81.65.-b Surface treatments
66.30.J- Diffusion of impurities

Influence of helium I layer formation on the copper‐helium‐4 Kapitza resistance at helium II bath temperatures

Y. I. Kim, Li‐He Lin, C. Chuang, and T. H. K. Frederking

Appl. Phys. Lett. 43, 451 (1983); http://dx.doi.org/10.1063/1.94385 (3 pages) | Cited 2 times

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The transient Kapitza resistance between copper and helium II caused by a step input in power has been studied near 2 K. The resistance is affected by formation of a helium I layer whose thickness, of the order 10−4–10−5 cm, is evaluated as a function of the heat flux density.
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64.70.Ja Liquid-liquid transitions
64.70.K- Solid-solid transitions
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Photodeposition of aluminum oxide and aluminum thin films

R. Solanki, W. H. Ritchie, and G. J. Collins

Appl. Phys. Lett. 43, 454 (1983); http://dx.doi.org/10.1063/1.94386 (3 pages) | Cited 48 times

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Uniform films of Al2O3 have been photodeposited using an excimer laser operating at 248 nm (KrF) or at 193 nm (ArF) and trimethylaluminum and N2O as the reactants. Deposition rates were typically 2000 Å/min and the physical, chemical, and electrical properties of the photodeposited Al2O3 films are comparable to films deposited using conventional techniques. Properties of photodeposited aluminum films are also presented.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.-m Photochemistry
73.61.-r Electrical properties of specific thin films

Absorption of carbon from residual gases during Ti implantation of alloys

I. L. Singer and T. M. Barlak

Appl. Phys. Lett. 43, 457 (1983); http://dx.doi.org/10.1063/1.94387 (3 pages) | Cited 32 times

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Secondary ion mass spectrometry (SIMS) has been used to analyze the surface composition of several steel and Ni‐plated substrates implanted with Ti ions (5×1017 Ti/cm2 at 190 keV). SIMS showed clearly the carbonaceous subsurface layer previously reported in Auger and nuclear backscattering analyses of Ti‐implanted Fe‐based alloys. Moreover, substrates implanted in a vacuum which was backfilled with isotopic 13CO gas showed 20 to 50× higher mass 13/ mass 12 ratios for surface concentrations and integrated subsurface doses than substrates implanted in normal vacuum atmospheres at pressures near 10−6 Torr. Auger analysis confirmed the subsurface C profile and found no O (〈1 at %) below the oxide layer. The experiments provide direct evidence that C atoms can be absorbed from residual gas molecules in a vacuum chamber near room temperatures during implantation of carbide‐forming ions. A second possible source of C atoms is also discussed.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.05.Bx Metals, semimetals, and alloys
61.72.U- Doping and impurity implantation
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Time‐resolved nonlinear luminescence spectroscopy by picosecond excitation correlation

M. Jørgensen and J. M. Hvam

Appl. Phys. Lett. 43, 460 (1983); http://dx.doi.org/10.1063/1.94388 (3 pages) | Cited 19 times

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A time‐resolved nonlinear luminescence spectroscopy based on a picosecond excitation correlation technique is described. It has been used to determine the recombination lifetimes of free and bound excitons in CdSe at low temperature and low exciton density.
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78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena
07.60.Rd Visible and ultraviolet spectrometers

Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition

J. T. Cheung, M. Khoshnevisan, and T. Magee

Appl. Phys. Lett. 43, 462 (1983); http://dx.doi.org/10.1063/1.94389 (3 pages) | Cited 32 times

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The heteroepitaxial growth of (111) CdTe on (100) GaAs substrates has been obtained by laser assisted deposition at 350 °C. Films 5–14 μm thick were characterized by x‐ray diffraction, UV reflectance measurement, and transmission electron microscopy. Results indicate good crystallinity with 105 cm−2 dislocation densities beyond a few microns from the CdTe/GaAs interface.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
75.20.Ck Nonmetals
79.20.Ds Laser-beam impact phenomena

Experimental verification of electron‐hole recombination theory for Si‐SiO2 interface traps with nonequilibrium, steady‐state, admittance measurements

A. K. Agarwal, F. M. Rhodes, and M. H. White

Appl. Phys. Lett. 43, 465 (1983); http://dx.doi.org/10.1063/1.94390 (3 pages) | Cited 2 times

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An analytical and experimental study of deep level Si‐SiO2 interface traps is presented for small‐signal, admittance measurements on a gated‐diode structure. This technique eliminates the minority‐carrier capture process and allows the competing emission process to dominate near the middle of the Si band gap. First‐order rate kinetics has been employed to predict the behavior of the nonequilibrium, steady‐state, occupancy function and ‘‘trap conductance’’ for states in the midgap region. Theory predicts and experimental measurements verify a sudden decrease or ‘‘pinning’’ of the trap conductance. The ratio of electron to hole capture cross sections, R=σn/σp, has a pronounced influence on the trap energy associated with the onset of ‘‘pinning’’, UTP= 1/2 ln(R).
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43.40.Qi Effect of sound on structures, fatigue; spatial statistics of structural vibration
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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