APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Sep 1983

Volume 43, Issue 6, pp. 517-615

Page 1 of 2 Pages Next Page | Jump to Page

Wideband frequency conversion in the UV by nine orders of stimulated Raman scattering in a XeCl laser pumped multimode silica fiber

Roberto Pini, Renzo Salimbeni, Manlio Matera, and Chinlon Lin

Appl. Phys. Lett. 43, 517 (1983); http://dx.doi.org/10.1063/1.94422 (2 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Efficient wideband frequency conversion of the UV XeCl excimer laser wavelength has been accomplished by stimulated Raman scattering in a multimode UV silica fiber. Nine Stokes orders have been generated in the 308–350‐nm spectral region at 650‐kW input power.
Show PACS
42.81.-i Fiber optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Low‐loss integrated optical waveguides fabricated by nitrogen ion implantation

I. K. Naik

Appl. Phys. Lett. 43, 519 (1983); http://dx.doi.org/10.1063/1.94423 (2 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
A technique for fabricating low‐loss (on the order of 0.1 dB/cm) integrated optical waveguides in amorphous SiO2‐based material by nitrogen ion implantation is reported. By comparing the results of nitrogen implantation and oxygen implantation in SiO2, the mechanism of waveguide formation in the nitrogen‐implanted waveguides is shown to be chemical doping effect of the nitrogen dissolved in amorphous SiO2.
Show PACS
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
61.72.U- Doping and impurity implantation
75.20.Ck Nonmetals

Phase‐locked semiconductor laser array with separate contacts

J. Katz, E. Kapon, C. Lindsey, S. Margalit, U. Shreter, and A. Yariv

Appl. Phys. Lett. 43, 521 (1983); http://dx.doi.org/10.1063/1.94424 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
A new monolithic phase‐locked semiconductor laser array has been fabricated. Employing two‐level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near‐field and far‐field patterns. Threshold currents are approximately 60 mA for each 5‐μm‐wide laser in the array. Phase locking has been observed via the narrowing of the far‐field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.
Show PACS
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Optical recording media with thermal coloration

Akira Morinaka, Shigeru Oikawa, and Hiroki Yamazaki

Appl. Phys. Lett. 43, 524 (1983); http://dx.doi.org/10.1063/1.94425 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Laser recording on novel optical recording media with thermal coloration is reported. The basic recording mechanism is thermally induced chemical reaction between a coloring reagent and a coupling reagent that are deposited in vacuum, separated by a light absorbing layer. Transmittance changes on a 1‐μm size recording pit have been observed by writing with a laser diode at 830 nm. This medium is colored blue, red, or black by selecting a coloring reagent layer. It is applied to multicolor recording by accumulating units of media.
Show PACS
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
79.20.Ds Laser-beam impact phenomena
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
42.70.Gi Light-sensitive materials

Enhanced frequency modulation in cleaved‐coupled‐cavity semiconductor lasers with reduced spurious intensity modulation

W. T. Tsang and N. A. Olsson

Appl. Phys. Lett. 43, 527 (1983); http://dx.doi.org/10.1063/1.94426 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We have observed enhanced analog frequency modulation in a cleaved‐coupled‐cavity (C3) laser. One diode is dc biased above threshold to produce the desired output power and the other diode, the modulator, is biased below threshold with a dc current and a small modulating current superimposed to achieve analog frequency modulation of the output beam. Comparing with direct analog frequency modulation of a conventional semiconductor laser, the C3 laser has allowed us to obtain significantly larger frequency deviation with negligible spurious intensity modulation. Further, the present frequency modulation response is also much more uniform with respect to modulation frequency. In addition, this scheme is applicable to C3 lasers formed from all laser structures.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Electronic wavelength tuning with semiconductor integrated etalon interference lasers

Arsam Antreasyan and Shyh Wang

Appl. Phys. Lett. 43, 530 (1983); http://dx.doi.org/10.1063/1.94427 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A novel method for broadband quasicontinuous wavelength tuning in GaAs‐GaAlAs semiconductor lasers is reported. The wavelenth tuning experiment is performed with an interferometric laser consisting of a resonator with curved and straight segments. By separately pumping different segments of the laser the output wavelength can be tuned over a wide range. The outstanding features of the device are (1) very stable single longitudinal mode and stable transverse mode operation, and (2) a wavelength tuning range of as much as 90 Å.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Passive mode locking of a long pulse XeCl laser

S. Watanabe, M. Watanabe, and A. Endoh

Appl. Phys. Lett. 43, 533 (1983); http://dx.doi.org/10.1063/1.94409 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Passive mode locking has been achieved in a XeCl laser with the gain duration over 150 ns. The saturation characteristics of absorber dyes including BBQ, BPBD, and PTP were measured, resulting in the lowest saturation intensity of BBQ. The almost 100% modulated train of 12 pulses was achieved with the rapid pulse sharpening to the duration of ∼2 ns, when BBQ was used as a saturable absorber.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Modification of optical properties of GaAs‐Ga1−xAlxAs superlattices due to band mixing

Yia‐Chung Chang and J. N. Schulman

Appl. Phys. Lett. 43, 536 (1983); http://dx.doi.org/10.1063/1.94410 (3 pages) | Cited 100 times

Full Text: | Download PDF

Show Abstract
A theoretical calculation of the optical properties of GaAs‐Ga1−xAlxAs superlattices is presented. The calculation includes the detailed atomic nature of the superlattice electronic states in a realistic tight‐binding model. It is found that the mixture of the bulk heavy hole and light hole states in the superlattice wave function substantially affects the optical properties.
Show PACS
78.20.-e Optical properties of bulk materials and thin films
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
71.10.-w Theories and models of many-electron systems

Gain on the green (504 nm) excimer band of I2

K. P. Killeen and J. G. Eden

Appl. Phys. Lett. 43, 539 (1983); http://dx.doi.org/10.1063/1.94411 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Gain on the green excimer band (λ∼504 nm) of the iodine dimer has been observed in electron‐beam‐pumped mixtures of Ar (or Ne), and hydrogen iodide. A peak gain coefficient of γ>1.1% cm−1 is measured at 506 nm with a tunable dye laser and the full width at half‐maximum (FWHM) of the gain spectrum in Ar diluent is 13 nm. Temporally resolved gain and fluorescence measurements show that the green emission originates from an I2 ion pair state other than D′. However, strong collisional coupling between the upper states of the UV (λ=342 nm) and green bands and superfluorescence on the UV band (I342∼2 MW cm−2) appear to limit the green gain coefficient to <20% of its small‐signal value. Consequently, suppression of superfluorescence on the UV D′→A′ bands of the homonuclear halogens should lead to a new family of excimer lasers with wavelengths extending from the green into the ultraviolet.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Kf Visible spectra

Shock wave pressure enhancement using short wavelength (0.35 μm) laser irradiation

R. J. Trainor, N. C. Holmes, R. A. Anderson, E. M. Campbell, W. C. Mead, R. J. Olness, R. E. Turner, and F. Ze

Appl. Phys. Lett. 43, 542 (1983); http://dx.doi.org/10.1063/1.94412 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
Shock velocities in planar aluminum targets irradiated at 0.35‐ and 1.06‐μm laser wavelengths have been measured. Absorbed intensities of ∼1.0×1014 W/cm2, produced by 700‐ps full width at half‐maximum Gaussian pulses, generated shock pressures of 1.0±0.2 and 0.6±0.2 TPa, respectively, demonstrating an enhancement of shock pressure at decreased laser wavelength.
Show PACS
52.35.Tc Shock waves and discontinuities
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Radical species in argon‐silane discharges

R. Robertson, D. Hils, H. Chatham, and A. Gallagher

Appl. Phys. Lett. 43, 544 (1983); http://dx.doi.org/10.1063/1.94413 (3 pages) | Cited 98 times

Full Text: | Download PDF

Show Abstract
SiHn radical densities at the surface of discharges in Ar‐SiH4 mixtures have been measured by low‐energy, electron‐collisional ionization and mass spectrometer detection of SiH+n. The principal radical seen at the substrate surface of a dc proximity discharge is SiH3.
Show PACS
52.80.-s Electric discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Quantitative ion beam process for the deposition of compound thin films

J. M. E. Harper, J. J. Cuomo, and H. T. G. Hentzell

Appl. Phys. Lett. 43, 547 (1983); http://dx.doi.org/10.1063/1.94414 (3 pages) | Cited 49 times

Full Text: | Download PDF

Show Abstract
We describe a quantitative ion beam technique for the deposition of compound thin films. The metal atom flux is supplied by inert ion beam sputtering, and the reactive flux is supplied by a low‐energy ion beam directed at the growing film, allowing the fundamental deposition parameters of arrival rates, ion energy, and direction to be measured and controlled. Analysis gives the sputtering yields and incorporation probabilities as a function of film composition, arrival rate ratios, and ion energy. Results are presented for Al films deposited under a range of N2+ ion bombardment (100–500 eV) up to arrival rate ratios exceeding the value needed to form AlN. Nitrogen ions are almost fully incorporated into Al films, and excess N is rejected above the composition N/Al=1. The microstructure is shown to depend on the N/Al arrival rate ratio and the nitrogen ion energy used during deposition.
Show PACS
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination

R. G. Wilson, D. K. Sadana, T. W. Sigmon, and C. A. Evans

Appl. Phys. Lett. 43, 549 (1983); http://dx.doi.org/10.1063/1.94415 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Correlation is found between the relative densities and depth distributions of defect clusters/disorder/damage measured by cross‐section transmission electron microscopy and Rutherford backscattering and silver atom depth distributions measured by secondary ion mass spectrometry for (100) and (111) silicon implanted with silver ions and annealed at 550 °C.
Show PACS
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects

Dissipation‐theory treatment of the transition from diffusion‐controlled to diffusionless solidification

Michael J. Aziz

Appl. Phys. Lett. 43, 552 (1983); http://dx.doi.org/10.1063/1.94416 (3 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
The steady‐state velocity of a planar liquid‐solid interface is predicted by calculating the free energy dissipated by irreversible processes at the interface and equating it to the available driving free energy. A solute drag term and an intrinsic interfacial mobility term are included in the dissipation calculations for a binary alloy. The solute drag calculation employs a solute trapping model, which has been extended to concentrated alloys. The result is presented in terms of a single unknown parameter, the interfacial diffusivity Di. A transition from diffusion controlled to diffusionless solidification occurs over approximately an order of magnitude in growth velocity, as the interface speed surpasses the maximum speed with which solute atoms can diffuse across the interface to remain ahead of the growing crystal.
Show PACS
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.35.Md Surface thermodynamics, surface energies
66.20.-d Viscosity of liquids; diffusive momentum transport

Photoacoustic determination of thermal diffusivity of solids: Application to CdS

C. L. Cesar, H. Vargas, J. Mendes Filho, and L. C. M. Miranda

Appl. Phys. Lett. 43, 555 (1983); http://dx.doi.org/10.1063/1.94417 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
A novel and simple approach, which uses a lateral heating source for the sample, is proposed as an alternative method for the photoacoustic determination of the thermal diffusivity of solids. The method is experimentally tested using a CdS sample.
Show PACS
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

Characteristics of Schottky diodes with microcluster interface

M. V. Schneider, A. Y. Cho, E. Kollberg, and H. Zirath

Appl. Phys. Lett. 43, 558 (1983); http://dx.doi.org/10.1063/1.94418 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We present experimental evidence that a single Schottky diode on GaAs is an agglomorate of paralleled microjunctions with different barrier heights and saturation currents. The current‐voltage characteristic of the cluster breaks up into sections of exponentials with different slopes as one cools the diode from 300 to 10 K. Noise measurements performed on cooled diodes at 4 GHz also confirm that a single device is a cluster of paralleled diodes.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Optical studies of InxGa1−xAs‐GaAs strained multiquantum well structures

J. Y. Marzin and E. V. K. Rao

Appl. Phys. Lett. 43, 560 (1983); http://dx.doi.org/10.1063/1.94419 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
We present photoluminescence and absorption measurements on molecular beam epitaxy grown strained InxGa1−xAs‐GaAs multiquantum well structures. The absorption results are interpreted as excitonic transitions (n=1, n=2), while the room‐temperature luminescence spectrum shows the corresponding subband to subband transitions, and the low‐temperature luminescence spectrum exhibits only the n=1 excitonic line.
Show PACS
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
75.20.Ck Nonmetals

Characteristic electronic defects at the Si‐SiO2 interface

N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, and P. J. Caplan

Appl. Phys. Lett. 43, 563 (1983); http://dx.doi.org/10.1063/1.94420 (3 pages) | Cited 89 times

Full Text: | Download PDF

Show Abstract
On unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the interface‐state distribution: one ∼0.3 eV above the silicon valence‐band maximum and a second ∼0.25 eV below the conduction band. Isochronal anneals of oxidized silicon, coated with aluminum, show that the spin density and the densities of the two DLTS peaks have the same annealing kinetics. On large‐area, Al‐gated capacitors the spin density can be modulated with an applied voltage; sweeping the silicon band gap at the interface through the Fermi level reveals that the spin density is approximately constant over the central region of the band gap but decreases near the band edges. The variation of the spin density with gate voltage identifies an amphoteric center with both electronic transitions in the band gap. Both the annealing behavior and the voltage dependence of the Pb center support the conclusion that these transitions correspond to the two characteristic peaks in the interface‐state distribution. The ∼0.6 eV separation of the peaks is the effective correlation energy of the dangling orbital on a trivalent silicon defect at the Si‐SiO2 interface. The similarity between the disordered interface and amorphous silicon is discussed.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Ht Other nonmetals
76.30.Mi Color centers and other defects

Surface plasmon emission in metal‐insulator‐degenerate p‐type semiconductor structures

S. R. Whiteley, L. Z. Xie, R. Hemphill, and T. K. Gustafson

Appl. Phys. Lett. 43, 566 (1983); http://dx.doi.org/10.1063/1.94421 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The complex dispersion relation for the antisymmetric plasmon mode in the presence of the tunneling interaction in In‐In2O3‐SnTe tunnel junctions is solved numerically. Net amplification of the mode may be possible at submillimeter and far infrared wavelengths in cooled junctions.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.45.+h Stimulated emission
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.40.Gk Tunneling

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

C. W. Tu, S. R. Forrest, and W. D. Johnston

Appl. Phys. Lett. 43, 569 (1983); http://dx.doi.org/10.1063/1.94428 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
We report the first epitaxial semiconductor‐dielectric‐semiconductor (SDS) double heterostructures using the III‐V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1−xF2/InP(001), were grown by molecular beam epitaxy and have lattice mismatches of −6.9% and +2.0%, respectively. In situ high‐energy electron diffraction showed that the initial stage of epitaxy of the InP/fluoride structure, unlike that of the fluoride/InP structure, exhibits pseudomorphism. Analysis of the electrical properties of SDS devices with an insulator thickness of ∼100 Å indicates both Ohmic and trap‐assisted tunneling conduction.
Show PACS
73.40.Ty Semiconductor-insulator-semiconductor structures
68.55.-a Thin film structure and morphology
73.40.Gk Tunneling
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Sputtered Schottky barrier solar cells on p‐type GaAs

Mousa E. Edweeb, E. J. Charlson, and E. M. Charlson

Appl. Phys. Lett. 43, 572 (1983); http://dx.doi.org/10.1063/1.94429 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Schottky barrier solar cells have been produced on single crystal p‐type GaAs by sputtering gold to form the barrier. The rectifying action for the gold sputtered p‐type device is unique to the method since normal thermal evaporated gold onto p‐type produced Ohmic contacts. The opposite behavior was observed for n‐type GaAs. Barrier heights have been measured for both p‐type (sputtered) and n‐type (thermal) diodes using current‐voltage and capacitance‐voltage methods and are 0.90 and 0.95 eV, respectively. The power conversion efficiencies without AR coatings have values of 6.56% (p) and 5.58% (n). Deep level transient spectroscopy has been used to identify the trap center concentrations and energy levels for both diodes to account for the relatively large dark currents in the p‐type (sputtered) diodes.
Show PACS
73.40.Ns Metal-nonmetal contacts
81.15.Cd Deposition by sputtering
84.60.Jt Photoelectric conversion
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Localized wet‐chemical etching of InP induced by laser heating

J. E. Bjorkholm and A. A. Ballman

Appl. Phys. Lett. 43, 574 (1983); http://dx.doi.org/10.1063/1.94430 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Light at 5145 Å is used to induce rapid localized etching of grooves and holes in InP samples (of all doping types) immersed in aqueous solutions of phosphoric acid. In the absence of light no etching takes place. The process is shown to be thermally activated.
Show PACS
81.65.-b Surface treatments
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
42.60.-v Laser optical systems: design and operation
44.90.+c Other topics in heat transfer (restricted to new topics in section 44)

Deep level impurities and current collection in CdS/CdTe thin‐film solar cells

L. C. Isett

Appl. Phys. Lett. 43, 577 (1983); http://dx.doi.org/10.1063/1.94431 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Current collection in thin‐film CdS/CdTe solar cells prepared by close‐spaced sublimation is limited to the depletion region. The width of the depletion region is altered by minority‐carrier trapping under light bias. The deep levels responsible for this phenomenon have been identified by deep level transient spectroscopy (DLTS). Heat treatment at 373 K changes the energy distribution of the deep levels. Heat treatment with illumination produces an energy level distribution greatly different from that produced by heat treatment without illumination. The observed photocapacitance changes are understood in terms of the emission rates measured in DLTS.
Show PACS
84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling

Wavelength‐selective absorption enhancement in thin‐film solar cells

Ping Sheng, A. N. Bloch, and R. S. Stepleman

Appl. Phys. Lett. 43, 579 (1983); http://dx.doi.org/10.1063/1.94432 (3 pages) | Cited 52 times

Full Text: | Download PDF

Show Abstract
We present the general principle of wavelength‐selective enhancement of absorption in thin‐film solar cells by a periodic grating substrate. By exact numerical calculation we demonstrate that substantial short‐circuit current gains are realizable in thin‐film amorphous silicon (a‐SiHx) solar cells. In particular, for a 0.5‐μm‐thick a‐SiHx solar cell, optimal texturing of an Ag substrate to form a one‐dimensional reflective grating can yield a 2‐mA/cm2 enhancement over the flat substrate case. For a two‐dimensional cross‐hatched grating substrate the enhancement is estimated to be 3.5–4 mA/cm2.
Show PACS
84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.20.Bh Theory, models, and numerical simulation

Incoherent light‐induced diffusion of arsenic into silicon from a spin‐on source

V. E. Borisenko and A. Nylandsted Larsen

Appl. Phys. Lett. 43, 582 (1983); http://dx.doi.org/10.1063/1.94433 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
A new approach to impurity diffusion in semiconductors based on the use of a spin‐on source and short‐time incoherent light exposure has been developed and experimentally investigated for arsenic diffusion into silicon. Arsenic‐doped oxide films, ∼0.19 μm thick, were spin‐on deposited onto 〈100〉 oriented silicon crystals and heated with radiation from a xenon lamp to temperatures between 950 and 1200 °C for times of 10 and 25 s. Arsenic diffused layers tested with resistivity measurements and Rutherford backscattering analysis were characterized by a maximum surface concentration ∼1×1020 atom/cm3 and a maximum depth ∼0.40 μm.
Show PACS
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.80.-x Physical radiation effects, radiation damage
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close