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1 Oct 1983

Volume 43, Issue 7, pp. 619-706

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Longitudinal mode spectrum of GaAs injection lasers under high‐frequency microwave modulation

K. Y. Lau, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 43, 619 (1983); http://dx.doi.org/10.1063/1.94463 (3 pages) | Cited 1 time

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Experimental observations of the lasing spectrum of a single mode semiconductor laser under continuous microwave modulation reveal that the lasing spectrum is apparently locked to a single longitudinal mode for optical modulation depths up to ∼80%, beyond which the lasing spectrum becomes multimoded, whose envelope width increases very rapidly with further increase in modulation depth. These results are satisfactorily explained by a theoretical treatment which enables one to predict the dynamic lasing spectrum of a laser from its cw lasing spectra at various output powers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Relative efficiency of 200Hg 79Br, Hg 79Br, and HgBr electric discharge lasers

F. E. Hanson, H. Rieger, and D. B. Cavanaugh

Appl. Phys. Lett. 43, 622 (1983); http://dx.doi.org/10.1063/1.94464 (2 pages)

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The spectra and relative efficiency of 200Hg 79Br, Hg 79Br, and HgBr in a small UV preionized electric discharge laser have been measured. There is a similar improvement in laser energy for both isotopic samples compared to the natural abundance mixture which can be attributed to a narrower gain spectrum and consequent higher peak gain. At the highest output measured, the increase in laser energy was about 25%. We estimate this is due to roughly 15% increase in small‐signal gain.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Transient stimulated Raman scattering of femtosecond laser pulses

P. G. May and W. Sibbett

Appl. Phys. Lett. 43, 624 (1983); http://dx.doi.org/10.1063/1.94465 (3 pages) | Cited 9 times

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Transient stimulated Raman scattering of amplified pulses from a passively mode‐locked ring cw dye laser has been demonstrated to be a useful method for the production of coherent near infrared femtosecond light pulses. Hypershort Stokes radiation is generated in capillary waveguides containing high pressure hydrogen (830 nm, 1265 nm) and methane (752 nm, 964 nm, 1340 nm) and pulse shortening factors as large as 2.9 have been observed.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
51.70.+f Optical and dielectric properties
42.79.Gn Optical waveguides and couplers

Bandwidth‐limited picosecond pulse generation in a synchronously pumped GaAs laser containing a variable absorber diode

W. A. Stallard and D. J. Bradley

Appl. Phys. Lett. 43, 626 (1983); http://dx.doi.org/10.1063/1.94466 (3 pages) | Cited 7 times

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We report combined active and passive mode locking of an external cavity semiconductor laser containing one absorbing and one gain diode. Compared with active mode locking alone this method requires less critical tuning of the rf modulation frequency and is not limited to operation close to threshold. Colliding pulse mode locking is achieved by placing the absorber diode at one end of the cavity so as to increase the effective absorber cross section. Streak camera measurements show that the pulse trains are free from background noise and that the 30‐ps pulses are bandwidth limited with sech2 profiles.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Fundamental linewidth in solitary, ultranarrow output PbS1−xSex diode lasers

Charles Freed, Joseph W. Bielinski, and Wayne Lo

Appl. Phys. Lett. 43, 629 (1983); http://dx.doi.org/10.1063/1.94467 (3 pages) | Cited 9 times

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The fundamental, quantum phase noise limited Lorentzian linewidth was directly measured from the beat‐note spectra generated by heterodyning PbS1−xSex diode lasers with a stable CO gas laser. The experimental results were matched by calculated theoretical line profiles. Linewidths as narrow as 22 kHz full width at half‐maximum power were observed.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory
42.62.-b Laser applications

Generation and detection of millimeter waves by picosecond photoconductivity

D. H. Auston and P. R. Smith

Appl. Phys. Lett. 43, 631 (1983); http://dx.doi.org/10.1063/1.94468 (3 pages) | Cited 18 times

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Picosecond photoconductors in the form of dielectric resonators have been used to generate and detect extremely short bursts of millimeter wave radiation at 55 GHz with a repetition rate of 100 MHz. Both the generator and detector are tuned to a frequency which is determined by the length of the photoconducting dielectric resonators. The detector, which is phase coherent, has an estimated noise equivalent power of only 4×10−11 W for an integration bandwidth of 1 Hz, and is capable of resolving time intervals corresponding to a small fraction of one millimeter‐wave cycle.
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85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects
42.79.-e Optical elements, devices, and systems

Optical remote monitoring of CH4 gas using low‐loss optical fiber link and InGaAsP light‐emitting diode in 1.33‐μm region

Kinpui Chan, Hiromasa Ito, and Humio Inaba

Appl. Phys. Lett. 43, 634 (1983); http://dx.doi.org/10.1063/1.94469 (3 pages) | Cited 19 times

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Purely optical remote monitoring of low‐level CH4 gas is realized for the first time by the method employing a 2‐km long‐distance, low‐loss silica optical fiber link and a compact absorption cell in conjunction with a high radiant InGaAsP light‐emitting diode (LED) at 1.33 μm. Based on the present experiment, the detection limit of CH4 in air was confirmed to be approximately 2000 ppm, i.e., 4% of the lower explosion limit of CH4. This result supports the conclusion that the fully optical remote sensing system incorporating ultralow loss optical fiber networks and near infrared LEDs or laser diodes can be extensively used for the detection and surveillance of various inflammable and/or explosive gases in industrial and mining complexes as well as in residential areas.
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42.68.Ay Propagation, transmission, attenuation, and radiative transfer
42.68.Bz Atmospheric turbulence effects
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.81.-i Fiber optics
85.60.Jb Light-emitting devices

Simultaneous measurement of magnetic field direction and ion temperature in a plasma by collective scattering with a CO2 laser

W. Kasparek and E. Holzhauer

Appl. Phys. Lett. 43, 637 (1983); http://dx.doi.org/10.1063/1.94452 (2 pages) | Cited 6 times

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The effect of strongly magnetized electrons on the spectrum of collective electron density fluctuations was observed for the first time in a laboratory plasma. A single mode CO2 laser and coherent detection were used to scatter from a hydrogen plasma with the scattering wave vector perpendicular to the magnetic field. The results demonstrate that both the ion temperature and direction of the magnetic field can be measured simultaneously.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Kn Thermodynamics of plasmas
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma

Direct determination of a radiation damage profile with atomic resolution in ion‐irradiated platinum

Dipankar Pramanik and David N. Seidman

Appl. Phys. Lett. 43, 639 (1983); http://dx.doi.org/10.1063/1.94453 (3 pages) | Cited 4 times

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The field‐ion microscope technique has been employed to determine directly a radiation damage profile, with atomic resolution, in a platinum specimen which had been irradiated at 60 K with 20‐keV Kr+ ions to a fluence of 5×1012 cm−2. It is shown that the microscopic spatial vacancy distribution (radiation damage profile) is directly related to the elastically deposited energy profile. The experimentally constructed radiation damage profile is compared with a theoretical damage profile—calculated employing the transport of ions in matter (TRIM) Monte Carlo code—and excellent agreement is obtained between the two. Thus, it is demonstrated that it is possible to go directly from a microscopic spatial distribution of vacancies to a continuous radiation damage profile.
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61.80.Jh Ion radiation effects
61.72.jd Vacancies
61.72.jj Interstitials
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Photoelectrochemical etching of integral lenses on InGaAsP/InP light‐emitting diodes

F. W. Ostermayer, P. A. Kohl, and R. H. Burton

Appl. Phys. Lett. 43, 642 (1983); http://dx.doi.org/10.1063/1.94461 (3 pages) | Cited 33 times

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A photoelectrochemical method has been developed for etching integral lenses on light‐emitting diodes (LED’s). An LED wafer is immersed in an electrolyte and biased at a potential at which the etch rate is directly proportional to light intensity. The image of a photomask is projected onto the surface of the wafer to produce a spatial variation of light intensity to etch the desired shape. The method has been used to etch spherical lenses on the n‐InP substrates of InGaAsP/InP LED’s. Extremely smooth surfaces are obtained for etch rates ≲0.5 μm/min. The resulting lensed LED’s gave the theoretically expected improvement in the light coupled into an optical fiber, indicating that the scattering loss of the lenses was very small. The technique is compatible with the standard LED processing and the apparatus required is relatively simple.
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42.79.Bh Lenses, prisms and mirrors
81.65.-b Surface treatments
82.50.-m Photochemistry
85.60.Jb Light-emitting devices

New types of high efficiency solar cells based on a‐Si

Yoshihiro Hamakawa, Kouha Fujimoto, Kouji Okuda, Yoshio Kashima, Shuichi Nonomura, and Hiroaki Okamoto

Appl. Phys. Lett. 43, 644 (1983); http://dx.doi.org/10.1063/1.94462 (3 pages) | Cited 14 times

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Three types of new structure a‐Si solar cells having more than 9% efficiency are presented. The first one has a high optical reflection back electrode metal alloyed with optically transparent n‐type μc‐Si deposited on the conventional glass substrate a‐SiC/a‐Si heterojunction solar cell. The second type structure is an inverted p‐i‐n solar cell having Ag/TiO2/a‐Si metal‐insulator‐semiconductor type back surface electrode which more efficiently collects longer wavelength photocarriers just above the band edge. The third structure demonstrated here has a‐Si/polycrystalline tandem junction to pick up the energy of longer wavelength photons passing through the front side of the a‐Si solar cell. All key technologies proposed here are practical and offer more promised real alternatives for the fabrication of high efficiency a‐Si solar cells.
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84.60.Jt Photoelectric conversion
85.30.-z Semiconductor devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.43.Fs Glasses
61.43.-j Disordered solids

Electrical characteristics of Be‐implanted GaAs diodes annealed with an ultrahigh power argon arc lamp

K. Tabatabaie‐Alavi, A. N. M. Masum Choudhury, H. Kanbe, C. G. Fonstad, and J. C. Gelpey

Appl. Phys. Lett. 43, 647 (1983); http://dx.doi.org/10.1063/1.94470 (3 pages) | Cited 10 times

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The potential of arc lamp annealing techniques in GaAs device processing is demonstrated by the fabrication of Be‐implanted mesa pin diodes. Implants were done at 50 and 120 keV with doses of 4.4×1014 and 5.1×1014 cm−2, respectively (total dose =9.5×1014 cm−2) into a 14‐μm‐thick undoped (ND−NA≊7.5×1014 cm−3) GaAs epitaxial layer grown by vapor phase epitaxy. Ten‐second annealing cycles with peak temperatures of 950° and 1050 °C have been studied. The electrical characteristics of these diodes are superior to published furnace‐annealed, Be‐implanted GaAs diodes.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
85.30.De Semiconductor-device characterization, design, and modeling
61.72.U- Doping and impurity implantation

Auger voltage contrast depth profiling of shallow p‐n junctions

R. Pantel

Appl. Phys. Lett. 43, 650 (1983); http://dx.doi.org/10.1063/1.94471 (3 pages) | Cited 4 times

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A contactless measurement technique for electrical depth profiling of very shallow p‐n junctions using a scanning Auger microscope is presented. The physical principle is the detection of variations in internal potential via shifts in the Auger peaks. Depth profiling of shallow junctions is realized by ion milling. Deep junctions are more rapidly analyzed via bevelling. For a p‐n junction of classical depth (3500 Å), Auger voltage contrast depth profiling is compared with spreading resistance measurements and shown to be an accurate and sensitive means of detecting low concentrations of electrically active impurities (in the 1015 cm−3 range). The main advantage of the method is excellent depth resolution when using ion milling. This is demonstrated for a very shallow p‐n junction (400 Å).
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.U- Doping and impurity implantation
79.20.Fv Electron impact: Auger emission

Observation of rapid field aided diffusion of silver in metal‐oxide‐semiconductor structures

J. D. McBrayer, R. M. Swanson, T. W. Sigmon, and J. Bravman

Appl. Phys. Lett. 43, 653 (1983); http://dx.doi.org/10.1063/1.94472 (2 pages) | Cited 11 times

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Fast electric field aided diffusion of silver in SiO2 has been observed for fields of 104 V/cm and temperatures as low as 275 °C. The diffusion coefficient of silver in SiO2 is estimated to be 10−13 cm2/s at 300 °C, with an activation energy of 1.24 eV. The consequences of Ag contamination in very large scale integrated metallization systems are discussed.
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66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Subnanosecond pulsed laser annealing of Se‐implanted InP

B. Tell, J. E. Bjorkholm, and E. D. Beebe

Appl. Phys. Lett. 43, 655 (1983); http://dx.doi.org/10.1063/1.94473 (3 pages) | Cited 5 times

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Indium phosphide implanted with Se+ has been laser annealed with 70 ps pulses at both λ=0.53 and 1.06 μm. For doses of 1×1015 cm−2, activations of ∼70% with peak electron concentrations of 6×1019 cm−3 have been achieved, while for doses of 3×1015 cm−2, activations of 33% with peak electron concentrations of 1.2×1020 cm−3 were measured. The carrier depth profiles for the laser annealed samples are shallow while those for thermal annealing are broad compared to the as‐implanted profiles. The morphology of the laser annealed spots is briefly discussed.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Heterojunction formation in (CdZn)S/CuInSe2 ternary solar cells

Richard K. Ahrenkiel, L. L. Kazmerski, R. J. Matson, C. Osterwald, T. P. Massopust, R. A. Mickelsen, and W. S. Chen

Appl. Phys. Lett. 43, 658 (1983); http://dx.doi.org/10.1063/1.94474 (3 pages) | Cited 11 times

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The electrical properties of (CdZn)S/CuInSe2 solar cells have been investigated by combining electron beam induced current measurements and capacitance‐voltage measurements on the same device. In the as‐grown device, the CuInSe2 is lightly doped n type. After baking to about 225 °C in vacuum, the CuInSe2 converts to p type forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.
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84.60.Jt Photoelectric conversion
85.30.-z Semiconductor devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Study of the uniformity and stoichiometry of CoSi2 films using Rutherford backscattering spectroscopy and scanning electron microscopy

Kouichirou Ishibashi and Seijiro Furukawa

Appl. Phys. Lett. 43, 660 (1983); http://dx.doi.org/10.1063/1.94437 (3 pages) | Cited 10 times

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Uniformity and stoichiometry of solid phase epitaxial CoSi2 films were investigated by Rutherford backscattering spectroscopy (RBS) and scanning electron microscopy (SEM). In a series of samples, small deviations of the composition ratio from the silicide stoichiometry were always observed in the RBS spectra for the films. Furthermore, it was found from SEM observation that these films were not uniform and the surfaces of the samples consisted of two kinds of materials. From these results and the spectra of micro Auger electron spectroscopy, it was concluded that the surfaces of the samples consisted of a stoichiometric CoSi2 region and exposed Si regions.
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68.60.-p Physical properties of thin films, nonelectronic
61.50.Nw Crystal stoichiometry
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
82.80.-d Chemical analysis and related physical methods of analysis

Inequality of semiconductor heterojunction conduction‐band‐edge discontinuity and electron affinity difference

Robert S. Bauer, Peter Zurcher, and Henry W. Sang

Appl. Phys. Lett. 43, 663 (1983); http://dx.doi.org/10.1063/1.94438 (3 pages) | Cited 8 times

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The commonly used Anderson electron affinity rule is shown not to provide the band‐edge offsets at the interface between different semiconductors. Using synchrotron radiation excited photoelectron spectroscopy, we determine electron affinities χ of 4.14 +0.17−0.09 eV for a Ge(110) surface and of 4.15 +0.17−0.09 eV for a 18‐Å GaAs(110) epitaxial overlayer on Ge(110). In the same experiment, for the same layers, a conduction‐band discontinuity ΔEc of 0.54±0.08 eV is measured for the heterojunction of GaAs grown by molecular beam epitaxy on Ge(110). Compilation of data on 14 recent photoemission studies confirms that ΔEc≠Δ χ for most heterojunction systems investigated to date.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.-r Electron states at surfaces and interfaces
81.65.-b Surface treatments

High‐efficiency Si solar cells by beam processing

R. T. Young, G. A. van der Leeden, R. L. Sandstrom, R. F. Wood, and R. D. Westbrook

Appl. Phys. Lett. 43, 666 (1983); http://dx.doi.org/10.1063/1.94439 (3 pages) | Cited 10 times

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Utilizing two recently developed beam processing techniques, i.e., gas discharge implantation and XeCl excimer laser annealing, p‐n junction silicon solar cells with total area (∼2 cm2) AM1 efficiencies as high as 16.5% have been made. These cells are of a particularly simple structure, fabricated without any sophisticated processing steps, and subjected to no high‐temperature treatment.
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84.60.Jt Photoelectric conversion
85.30.-z Semiconductor devices

Computer simulation of high speed melting of amorphous silicon

H. C. Webber, A. G. Cullis, and N. G. Chew

Appl. Phys. Lett. 43, 669 (1983); http://dx.doi.org/10.1063/1.94440 (3 pages) | Cited 45 times

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The laser melting of amorphous Si is accurately modelled by computer calculations. It is found that the thermal conductivity of the amorphous phase must be set at approximately 10−2 W/cm K, a value much lower than that of crystalline material to obtain close agreement with experimental measurements. This low value is, however, consistent with the thermal conductivities of other amorphous materials. The results of the computations, when compared with experimental observations, confirm that the melting point of ion implanted amorphous Si is below that of crystalline Si, with a best estimate in the range 1185–1385 K.
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64.70.D- Solid-liquid transitions
42.62.-b Laser applications
44.10.+i Heat conduction
05.70.Ce Thermodynamic functions and equations of state

Effects of doping on transport and deep trapping in hydrogenated amorphous silicon

R. A. Street, J. Zesch, and M. J. Thompson

Appl. Phys. Lett. 43, 672 (1983); http://dx.doi.org/10.1063/1.94441 (3 pages) | Cited 100 times

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We report a quantitative comparison of the trapping rates of carriers at charged and neutral dangling bonds in hydrogenated amorphous silicon (a‐Si:H). The data are obtained from time‐of‐flight photoconductivity studies of doped and undoped samples. The temperature dependence of the trapping rates, as well as the effect of boron doping on the hole drift mobility, is also reported.
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72.80.Ng Disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation

Surface compensation of p‐InP as observed by capacitance dispersion

R. K. Ahrenkiel, P. Sheldon, D. Dunlavy, L. Roybal, and R. E. Hayes

Appl. Phys. Lett. 43, 675 (1983); http://dx.doi.org/10.1063/1.94442 (2 pages) | Cited 7 times

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Very strong capacitance‐voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small‐signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority‐carrier profile in lightly doped or low mobility semiconductors.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Ns Metal-nonmetal contacts

Pressure dependence of the electron capture cross section of the B hole trap in liquid phase epitaxial gallium arsenide

C. E. Barnes and G. A. Samara

Appl. Phys. Lett. 43, 677 (1983); http://dx.doi.org/10.1063/1.94443 (3 pages) | Cited 13 times

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A study of the hydrostatic pressure dependence of the electron capture cross section of the B hole trap in liquid phase epitaxial gallium arsenide has revealed that this cross section is strongly affected by pressure. The results are consistent with, and provide support for, the multiphonon emission model for the capture process at this trap.
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62.50.-p High-pressure effects in solids and liquids
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Reduction in the localized band‐gap states in amorphous silicon by annealing and hydrogen implantation

G. W. Neudeck and T. C. Lee

Appl. Phys. Lett. 43, 680 (1983); http://dx.doi.org/10.1063/1.94444 (3 pages) | Cited 3 times

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The effect of in situ thermal annealing prior to hydrogen implantation is reported on vacuum evaporated amorphous silicon. By performing a 400 °C anneal for 4 h immediately following film deposition the film porosity is greatly reduced. The film is then implanted with hydrogen to a dose of 5×1016/cm2. A field‐effect conductance change of six orders of magnitude was observed which yielded a density of localized states near the Fermi level of 4×1017/cm3 eV.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
71.55.Jv Disordered structures; amorphous and glassy solids
61.72.U- Doping and impurity implantation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon

P. Fahey, R. W. Dutton, and M. Moslehi

Appl. Phys. Lett. 43, 683 (1983); http://dx.doi.org/10.1063/1.94445 (3 pages) | Cited 44 times

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The effect of the silicon thermal nitridation processes, nitridation of SiO2 (oxynitridation), and direct nitridation of the silicon surface on boron and phosphorus diffusion is examined. It is found that oxynitridation results in enhanced diffusion of both impurities while direct nitridation of the silicon surface causes retarded diffusion for both. These phenomena are explained by the mechanisms of silicon self‐interstitial injection in the case of oxynitridation and self‐interstitial depletion in the case of direct nitridation.
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66.30.J- Diffusion of impurities
82.60.-s Chemical thermodynamics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.72.jd Vacancies
61.72.jj Interstitials
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