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15 Oct 1983

Volume 43, Issue 8, pp. 711-801

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Ion‐assisted deposition of bulklike ZrO2 films

P. J. Martin, R. P. Netterfield, W. G. Sainty, G. J. Clark, W. A. Lanford, and S. H. Sie

Appl. Phys. Lett. 43, 711 (1983); http://dx.doi.org/10.1063/1.94485 (3 pages) | Cited 16 times

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Stable thin films of zirconium dioxide are produced by ion‐assisted electron beam deposition at room temperature and 300 °C. The method yields films with substantially increased packing density resulting in refractive indices close to the bulk value. The improvement in optical properties is accompanied by an amorphous to cubic crystalline transition of the film structure which is mixed with a monoclinic phase for heated films.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
75.20.Ck Nonmetals

Subpicosecond electro‐optic shock waves

D. H. Auston

Appl. Phys. Lett. 43, 713 (1983); http://dx.doi.org/10.1063/1.94486 (3 pages) | Cited 48 times

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When an extremely short optical pulse is focused into an electro‐optic material, a moving polarization is produced which radiates in a Cerenkov‐like cone. At the boundary of this shock wave, the electric field consists of an extremely fast electrical transient with a correspondingly wide spectral distribution extending well into the far infrared. When appropriately coupled out of the material, this shock wave can be used as a fast electronic impulse generator or far‐infrared source without requiring subminiature transmission structures to guide the signal.
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78.20.Jq Electro-optical effects

Generation of tunable single‐mode picosecond pulses from an AlGaAs semiconductor laser with grating feedback

S. Lundqvist, T. Andersson, and S. T. Eng

Appl. Phys. Lett. 43, 715 (1983); http://dx.doi.org/10.1063/1.94487 (3 pages) | Cited 16 times

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Widely tunable single‐mode picosecond pulses have been obtained from a buried optical guide AlGaAs semiconductor laser operated with external grating feedback. Intensity autocorrelation measurements show single‐mode 30‐ps pulses. A tuning range of 20 nm, corresponding to more than 70 different laser frequencies, was easily achieved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Dj Gratings

Direct etching of polymeric materials using a XeCl laser

J. E. Andrew, P. E. Dyer, D. Forster, and P. H. Key

Appl. Phys. Lett. 43, 717 (1983); http://dx.doi.org/10.1063/1.94488 (3 pages) | Cited 198 times

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The direct etching of polyethylene terephthalate film using a XeCl laser has been investigated and is shown to be consistent with a thermal model for degradation. Microstructure revealed by deep etching suggests the UV laser may prove useful for studying polymeric materials. Polyimide and photoresist film has also been directly etched.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
42.62.-b Laser applications

Real‐time measurement of picosecond optical pulses from an InGaAsP diode laser using an ultrafast streak camera with infrared frequency up‐conversion

Noriaki Onodera, Hiromasa Ito, and Humio Inaba

Appl. Phys. Lett. 43, 720 (1983); http://dx.doi.org/10.1063/1.94489 (3 pages) | Cited 3 times

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A novel method for real‐time measurement of ultrashort optical pulses generated from InGaAsP diode lasers at the wavelength of 1.3 μm has been realized by means of an ultrafast streak camera incorporating a frequency up‐conversion technique with a LiIO3 crystal pumped by a Q‐switched neodymium: yttrium aluminum garnet (Nd:YAG) laser at 1.064 μm. The optical pulse from an InGaAsP double‐channel planar buried heterostructure (DC‐PBH) diode laser operated by a short pulse current of 1‐ns duration was measured to have a full width at half‐maximum (FWHM) of approximately 28 ps by single shot scanning with the temporal resolution of 8 ps. Using a 15‐mm‐long LiIO3 crystal and 500‐W peak power of the pumping laser pulse focused at 400 μm in diameter, the up‐conversion efficiency and minimum detectable peak power of the diode laser pulse at 1.3 μm were estimated to be approximately 0.65% and 1 mW, respectively. This technique can be widely utilized for real‐time detection of ultrashort optical pulses in the wavelength range beyond 1–10 μm or more.
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42.55.Px Semiconductor lasers; laser diodes
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Single mode operation of 1.5‐μm cleaved‐coupled‐cavity InGaAsP lasers

H. Temkin, J. P. van der Ziel, R. A. Linke, and R. A. Logan

Appl. Phys. Lett. 43, 723 (1983); http://dx.doi.org/10.1063/1.94490 (3 pages) | Cited 2 times

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Single longitudinal mode operation of cleaved‐coupled‐cavity lasers formed by recleaving of 1.5‐μm InGaAsP buried crescent lasers is investigated as a function of bias current, temperature, and modulation frequency. The two‐cavity lasers are made to operate in a stable single mode by adjusting the bias levels of the electrically isolated and optically coupled sections. The wavelength stability with temperature results in a change of only 0.48 Å/°C over a range of 14 °C. Single mode operation is preserved under direct modulation at rates as high as 1 Gb/s. The reduction in linewidth and the absence of partition noise makes these lasers useful for optical transmission through highly dispersive single mode fibers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A 30‐W radio frequency excited waveguide CO2 laser

D. He and D. R. Hall

Appl. Phys. Lett. 43, 726 (1983); http://dx.doi.org/10.1063/1.94491 (3 pages) | Cited 23 times

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We describe the design and preliminary performance characteristics of a compact sealed, transverse rf discharge excited waveguide CO2 laser which is capable of output powers of 30 W and a peak efficiency of 13% from a 37‐cm discharge length.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Pi High-frequency and RF discharges

Phonon assisted gain coefficient in AlGaAs quantum well lasers

Akira Sugimura

Appl. Phys. Lett. 43, 728 (1983); http://dx.doi.org/10.1063/1.94492 (3 pages) | Cited 1 time

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The phonon assisted gain coefficient is evaluated theoretically for AlGaAs quantum well lasers by means of a renormalization theory. It is clarified that the phonon assisted gain coefficient saturates strongly with respect to the phonon number. Its maximum value is smaller than the corresponding gain coefficient of the direct transition. The wavelength, where the phonon assisted gain coefficient is maximum, approaches the direct transition wavelength as the pump rate increases.
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42.55.Px Semiconductor lasers; laser diodes

Fiber optic pulsed laser holography

T. D. Dudderar and J. A. Gilbert

Appl. Phys. Lett. 43, 730 (1983); http://dx.doi.org/10.1063/1.94476 (3 pages) | Cited 1 time

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This study demonstrates that pulsed laser illumination may be used to suppress the ambient motion related instabilities associated with the application of coherent multimode optical fiber image bundles to the recording of remote holograms.
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42.40.Ht Hologram recording and readout methods
42.81.-i Fiber optics
42.60.-v Laser optical systems: design and operation

Stress compensation in laser diodes

H. Koyama, T. Nishioka, K. Isshiki, H. Namizaki, and S. Kawazu

Appl. Phys. Lett. 43, 733 (1983); http://dx.doi.org/10.1063/1.94477 (3 pages) | Cited 3 times

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Stress compensation in GaAs‐(Ga,Al)As laser diodes is discussed. The stress distributions in the laser diodes are theoretically simulated by the finite element method. The photoelastic effect is used to observe the actual strain fields. It is found by simulation that the stress can be minimized by optimizing the Si submount thickness. Lasers fabricated with the optimized submount successfully exhibit low strain fields.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
62.90.+k Other topics in mechanical and acoustical properties of condensed matter (restricted to new topics in section 62)

Efficient discharge pumping of an XeCl laser using a high‐voltage prepulse

William H. Long, Michael J. Plummer, and Eddy A. Stappaerts

Appl. Phys. Lett. 43, 735 (1983); http://dx.doi.org/10.1063/1.94478 (3 pages) | Cited 66 times

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A laser efficiency of 4.2% at 4.2‐J output has been obtained from a self‐sustained discharge‐pumped XeCl laser using a novel high‐voltage prepulse technique to provide efficient energy transfer from a low‐impedance transmission line to the load. High‐pressure discharge‐pumped lasers now offer a reliable, efficient, and scalable alternative to e beams for many applications in the visible and ultraviolet regions of the spectrum.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges

An optical modulator based on electrocapillarity

Michael C. Lea

Appl. Phys. Lett. 43, 738 (1983); http://dx.doi.org/10.1063/1.94479 (3 pages) | Cited 2 times

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An optical modulator based on the electrocapillarity effect has been built and demonstrated. Optically, the device consists of a plane, variable radius circular mirror formed by the contact of mercury and a glass sheet. The mercury is also in contact with an aqueous electrolyte, and the diameter of the mirror is switched between two stable values by applying voltage pulses to the mercury/electrolyte interface. Switching times of 3 ms have been observed.
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42.79.Hp Optical processors, correlators, and modulators
85.60.Pg Display systems

Broadband tuning (ΔE∼100 meV) of Alx Ga1−xAs quantum well heterostructure lasers with an external grating

J. E. Epler, N. Holonyak, R. D. Burnham, C. Lindström, W. Streifer, and T. L. Paoli

Appl. Phys. Lett. 43, 740 (1983); http://dx.doi.org/10.1063/1.94480 (3 pages) | Cited 13 times

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Alx Ga1−xAs‐GaAs quantum well heterostructure laser diodes are shown to be tunable over a 100‐meV range when operated continuously (cw) at room temperature in an external cavity with a grating to control feedback. The gain profile of the n=1 and n′=1′ (electron‐to‐heavy hole and electron‐to‐light hole, e→hh and e→lh) transitions and the n=2 electron‐to‐heavy hole transitions are clearly outlined by the intensity profile of the selected laser lines. The partial homogeneous broadening of the gain profile agrees with rapid carrier relaxation in the well. The diodes contain a single 60–90‐Å GaAs well and are grown by metalorganic chemical vapor deposition.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Low power optical saturation of bound excitons with giant oscillator strength

Mario Dagenais

Appl. Phys. Lett. 43, 742 (1983); http://dx.doi.org/10.1063/1.94481 (3 pages) | Cited 14 times

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The optical saturation of the I2 bound exciton in cadmium sulfide, an exciton bound to a donor, is reported. This system, which decays radiatively in 500 ps, can be saturated with a cw power of only 3.6 μW, which is equivalent to a saturation intensity of 58 W/cm2. Good agreement is found with the predictions of an inhomogeneously broadened two‐level system. Thermal effects appear to play a minimal role.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors

Demonstration of large electron‐beam energy extraction by a tapered‐wiggler free‐electron laser

W. M. Grossman, J. M. Slater, D. C. Quimby, T. L. Churchill, J. Adamski, R. C. Kennedy, and D. R. Shoffstall

Appl. Phys. Lett. 43, 745 (1983); http://dx.doi.org/10.1063/1.94482 (3 pages) | Cited 1 time

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Electron‐beam energy spectral measurements were made on a tapered‐wiggler free‐electron laser amplifier. A 19‐MeV electron beam from a traveling‐wave linear accelerator interacted in a tapered wiggler with an intense 10.6‐μm CO2 laser beam. The electron spectra show a 4% net energy loss and a 9% peak loss. Measurements of electron energy spectra, extraction efficiency as a function of electron‐beam energy, and extraction efficiency as a function of optical power are presented and are consistent with theoretically predicted performance.
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41.60.-m Radiation by moving charges
41.75.Fr Electron and positron beams
42.55.-f Lasers

Measurement of periodic surface heating using surface acoustic waves

R. G. Stearns, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 43, 748 (1983); http://dx.doi.org/10.1063/1.94483 (3 pages) | Cited 5 times

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A new technique is described to measure periodic heating at and near the surface of a material. The technique involves the phase perturbation of a surface acoustic wave propagating through the heated region. Temperature fluctuations can be measured at modulation frequencies of several hertz to hundreds of kilohertz with high sensitivity. A theory is given which predicts the acoustic phase perturbation as a function of thermal modulation frequency, and is shown to agree well with experiment.
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68.35.Md Surface thermodynamics, surface energies
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

1.0‐GHz thin‐film bulk acoustic wave resonators on GaAs

G. R. Kline and K. M. Lakin

Appl. Phys. Lett. 43, 750 (1983); http://dx.doi.org/10.1063/1.94484 (2 pages) | Cited 25 times

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This letter reports on a new fabrication technique and experimental results obtained on bulk acoustic wave resonators using thin piezoelectric composite films of A1N on GaAs insulating substrates. The fabrication involves only a wafer top side planar processing compatible with integrated circuit technology. Resonators have been made in the frequency range UHF to 1 GHz in order to demonstrate the fabrication technique and evaluate material performance in resonator devices. Both longitudinal and shear wave resonators have been measured with temperature coefficients of −24 and −26.5 ppm/°C, respectively. Shear wave results were obtained from tilted c‐axis films grown in a dc planar magnetron sputtering system.
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43.38.Fx Piezoelectric and ferroelectric transducers
43.35.Ns Acoustical properties of thin films

Simple mixture rule for the conductivity of a partially ionized gas

S. W. Simpson and P. Kovitya

Appl. Phys. Lett. 43, 752 (1983); http://dx.doi.org/10.1063/1.94493 (3 pages) | Cited 9 times

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A mixture rule for calculating the electrical conductivity of a partially ionized gas is described. Simple formulae, suitable for rapid computer evaluation of the conductivity for arbitrary species concentrations, are presented. Calculated conductivities are in good agreement with more sophisticated formulations. The average cross‐section data needed to use the mixture rule are given for hydrogen, helium, and argon.
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52.25.Fi Transport properties
52.20.Fs Electron collisions

Ablation and lateral energy transport in high‐Z plasmas produced by lasers

P. D. Gupta, P. A. Naik, and H. C. Pant

Appl. Phys. Lett. 43, 754 (1983); http://dx.doi.org/10.1063/1.94494 (3 pages) | Cited 4 times

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A comparative study of ablation from moderate and high‐Z layered targets of aluminum and gold in the laser intensity range 1011–1013 W/cm2 of a neodymium glass laser is presented. A substantially large lateral energy loss for high‐Z target is observed from measurements of ablation depth, x‐ray emission, and plasma blow‐off.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Fi Transport properties

Crystalline correlation of epitaxial Si films with underlying spinel films in Si/(MgO Al2O3) spinel/Si structure

Koji Egami, Masao Mikami, and Hideki Tsuya

Appl. Phys. Lett. 43, 757 (1983); http://dx.doi.org/10.1063/1.94495 (3 pages) | Cited 8 times

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Using epitaxial magnesia spinel (MgO Al2O3) films on (100) Si, heteroepitaxial Si films (0.6–3 μm) on these substrates are obtained by a conventional chemical vapor deposition method. The crystallinity of both epitaxial Si and spinel films was investigated by x‐ray diffraction techniques. Silicon film quality becomes more perfect on thinner spinel films with smoother surfaces in the range of more than ∼0.1 μm, in spite of the spinel crystal perfection becoming inferior with decreasing film thickness. These results are discussed in terms of the spinel surface roughness effect on Si nuclei coalescence.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Independently variable band gaps and lattice constants in GaAsP strained‐layer superlattices

R. M. Biefeld, P. L. Gourley, I. J. Fritz, and G. C. Osbourn

Appl. Phys. Lett. 43, 759 (1983); http://dx.doi.org/10.1063/1.94496 (3 pages) | Cited 12 times

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The capability of independently varying band gaps and lattice constants in ternary strained‐layer superlattices has been experimentally demonstrated for the first time. High‐quality GaAsxP1−x/GaP superlattices (0<x≤0.62, lattice mismatches up to 2.3%) were grown by metalorganic chemical vapor deposition and their band gaps and lattice constants were measured. The band gaps at each composition agree with calculated values, and differ significantly from the band gaps of bulk alloys with the same lattice constant. This newly demonstrated capability could allow high‐quality heterojunction devices to be grown in a variety of lattice‐mismatched ternary systems.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Optical properties of GaInAs/AlInAs single quantum wells

D. F. Welch, G. W. Wicks, and L. F. Eastman

Appl. Phys. Lett. 43, 762 (1983); http://dx.doi.org/10.1063/1.94497 (3 pages) | Cited 37 times

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Ga0.47In0.53As/Al0.48In0.52As single quantum wells grown by molecular beam epitaxy have exhibited photoluminescence emission from 9668 Å to the 1.55‐μm bulk emission at 4 K. The emission at 9668 Å is 0.474 eV above the band gap of GaInAs. The single quantum well (SQW) is 15 Å wide which is the narrowest SQW reported in any III‐V compound. The effect of varying the buffer layer of the SQW on the photoluminescence intensity of a 65‐Å single quantum well is studied.
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75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Plastic‐deformation‐induced deep level in GaP

M. Zafar Iqbal

Appl. Phys. Lett. 43, 764 (1983); http://dx.doi.org/10.1063/1.94498 (2 pages) | Cited 1 time

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Thermally stimulated current measurements on Schottky barriers evaporated on bent GaP:N epitaxial layers are reported. A pronounced peak corresponding to a deep level with a binding energy of ∼0.57 eV is attributed to dislocations produced during plastic deformation.
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78.40.Fy Semiconductors
81.40.Lm Deformation, plasticity, and creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Donor‐related microdefects at surface of denuded zone in Czochralski‐grown silicon

Ritsuo Takizawa, Akira Ohsawa, Kouichirou Honda, and Nobuo Toyokura

Appl. Phys. Lett. 43, 766 (1983); http://dx.doi.org/10.1063/1.94499 (3 pages) | Cited 1 time

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Microdefects related to donors in the denuded zone formed after (1200–700 °C) annealing were investigated using spreading resistance, etching, and transmission electron microscope methods. It is found that donors are generated about 1×1014 cm−3 even at the surface of the denuded zone and are closely related to small oxygen precipitates rather than dislocation dipoles corresponding to etch pits. Donor formation at 700 °C annealing is concluded to be concerned with small oxygen precipitates nucleated at embryo sites in addition to carbon sites.
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61.72.jd Vacancies
61.72.jj Interstitials
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
72.80.Cw Elemental semiconductors
81.65.-b Surface treatments

Influence of hydrogen on the performance of magnetron‐sputtered amorphous hydrogenated silicon field‐effect transistors

Moafak C. Abdulrida and John Allison

Appl. Phys. Lett. 43, 768 (1983); http://dx.doi.org/10.1063/1.94500 (3 pages) | Cited 1 time

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The characteristics of amorphous hydrongenated silicon field‐effect transistors (a‐Si:H FET’s) depend strongly on the partial hydrogen pressure during rf magnetron sputtering of the active material. The density of states near midgap can be reduced to around 8×1016 cm−3 eV−1, and, as a consequence, the on‐off drain current ratio increases by more than four orders of magnitude at a gate voltage lower than 15 V. The performance of such FET’s, in particular their output characteristics, is found to be comparable to that of glow‐discharge produced devices.
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85.30.Tv Field effect devices
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