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1 Nov 1983

Volume 43, Issue 9, pp. 807-884

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High gain signal amplification in an InSb transphasor at 77 K

F. A. P. Tooley, S. D. Smith, and C. T. Seaton

Appl. Phys. Lett. 43, 807 (1983); http://dx.doi.org/10.1063/1.94515 (3 pages) | Cited 15 times

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We present experimental observations of the variations of the input‐output characteristic of a nonlinear Fabry–Perot resonator as a function of initial detuning. The characteristics include regions with various differential gains, or show hysteresis with the width of the bistable region being variable. Operating the device as a transphasor (optical transistor), a signal of 3 μW can be amplified with a signal power gain of up to 104 with the device operating at 77 K and 1819 cm−1.
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42.79.Hp Optical processors, correlators, and modulators
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.60.Fc Modulation, tuning, and mode locking

Ridged substrate internally diffused stripe AlGaAs laser emitting in the visible wavelength region

T. G. J. van Oirschot, A. Valster, and J. A. de Poorter

Appl. Phys. Lett. 43, 809 (1983); http://dx.doi.org/10.1063/1.94516 (3 pages) | Cited 1 time

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The ridged substrate internally diffused stripe (RIDS) laser, a new gain‐guided AlGaAs diode laser structure emitting light in the short wavelength region, is described. The five‐layer structure, including an intermediate n‐type Ga1−xAlxAs current blocking layer, is grown by one‐step liquid phase epitaxy on a p‐type substrate with a mesa etched in the stripe direction. Above the mesa a narrow current injection path is created by local conversion of the blocking layer due to outdiffusion of p‐type dopants from the neighboring p‐type cladding layer and substrate. Lasers emitting at 770 nm have thus been obtained with cw room‐temperature threshold currents of 70 mA and operating stably in the fundamental transverse mode up to pulsed output powers of 100 mW.
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42.55.Px Semiconductor lasers; laser diodes

Phase matching in frequency mixing with internally generated waves

K. C. Rustagi, S. C. Mehendale, and P. K. Gupta

Appl. Phys. Lett. 43, 811 (1983); http://dx.doi.org/10.1063/1.94517 (3 pages)

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When some of the input waves involved in nonlinear frequency conversion are amplified internally, the phase mismatch is shown to reduce the conversion efficiency significantly even when Maker fringes are washed out.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Fast relaxing absorptive nonlinear refraction in superlattices

S. Y. Yuen

Appl. Phys. Lett. 43, 813 (1983); http://dx.doi.org/10.1063/1.94518 (3 pages) | Cited 40 times

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Two nonlinear optical processes in superlattices are studied. The first involves free‐carrier absorption and the second involves direct intersubband absorption. The optical field modulates the energy‐dependent effective mass or the distribution of electrons among the subbands, giving rise to nonlinear refraction. These processes have picosecond relaxation times and nonlinearities up to four orders of magnitude larger than the nonlinear refractive effects in bulk crystals with comparable relaxation times.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.-y Excitons and related phenomena

Interferometric coupled‐waveguide semiconductor laser: Structural optimization and its performance

Ken‐ichi Kitayama, Ismail H. A. Fattah, and Shyh Wang

Appl. Phys. Lett. 43, 816 (1983); http://dx.doi.org/10.1063/1.94519 (3 pages) | Cited 1 time

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Interferometric effect of coupled‐waveguide semiconductor laser consisting of two active and passive waveguides is investigated theoretically and experimentally. The structural optimization is made to select and control the longitudinal mode. The test GaAlAs laser shows a single longitudinal operation and good temperature stability of lasing wavelength due to the optimized interferometric effect predicted by the theory.
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42.55.Px Semiconductor lasers; laser diodes
42.25.Hz Interference
42.79.Gn Optical waveguides and couplers

Relaxation time broadening on emission spectrum of a Zn‐doped p‐type GaAs injection laser

Minoru Yamada, Akira Tanaka, Kiyoshi Moriya, and Yuichi Kado

Appl. Phys. Lett. 43, 818 (1983); http://dx.doi.org/10.1063/1.94520 (3 pages) | Cited 2 times

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Spontaneous emission and lasing gain profiles of semiconductor injection lasers which have Zn‐doped GaAs active regions were experimentally determined, and the tailing phenomenon into the band gap of these profiles was theoretically explained as a result of relaxation time broadening due to scattering of electrons and holes. Especially, the tail of the gain profile was found to show a concave shape, which was better explained by the relaxation time broadening model than by the band tail state model.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.55.-m Photoluminescence, properties and materials
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Planar monolithic integration of a photodiode and a GaAs preamplifier

R. M. Kolbas, J. Abrokwah, J. K. Carney, D. H. Bradshaw, B. R. Elmer, and J. R. Biard

Appl. Phys. Lett. 43, 821 (1983); http://dx.doi.org/10.1063/1.94507 (3 pages) | Cited 20 times

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A monolithic optical receiver chip consisting of a pin photodiode and a transimpedance preamplifier on a GaAs semi‐insulating substrate is reported. The epitaxial layers for the photodiode are grown by hydride vapor phase epitaxy and the circuit elements are fabricated by selective ion implantation in the semi‐insulating substrate. The integration scheme results in a planar surface which simplifies the processing of optoelectronic integrated chips.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High‐power transverse‐discharge Ca+ recombination laser

M. S. Butler and J. A. Piper

Appl. Phys. Lett. 43, 823 (1983); http://dx.doi.org/10.1063/1.94508 (3 pages) | Cited 5 times

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Operation of a transverse‐discharge‐excited Ca+ recombination laser at high He buffer gas pressures (1200 Torr) and high discharge current densities (103 A/cm2) is reported. Single laser pulse energies at λ373.7 nm exceeding 0.7 mJ have been obtained corresponding to specific energy densities over 35 μJ/cm3. There appear to be no fundamental limitations to attainment of pulse repetition rates in the megahertz range.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Acoustic signals from laser‐annealed amorphous silicon

N. Baltzer, M. von Allmen, and M. W. Sigrist

Appl. Phys. Lett. 43, 826 (1983); http://dx.doi.org/10.1063/1.94509 (3 pages) | Cited 18 times

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Acoustic signals generated by Q‐switch laser irradiation of amorphous Si have been investigated as a function of incident laser fluence. Marked discontinuities in the signal at the recrystallization threshold and at the damage threshold are found. The results indicate that the first effect is due to melting and the second is due to evaporation.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
79.20.Ds Laser-beam impact phenomena

Analysis of epitaxial fluoride‐semiconductor interfaces

J. M. Gibson and Julia M. Phillips

Appl. Phys. Lett. 43, 828 (1983); http://dx.doi.org/10.1063/1.94510 (3 pages) | Cited 27 times

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It is known that the epitaxial quality of alkaline‐earth fluorides on semiconductors is not simply related to the degree of lattice mismatch. The interfacial structure in two such systems has been examined by high‐resolution electron microscopy. For the high‐mismatch system (9%), BaF2 on (111) Ge, an ‘‘incommensurate’’ interface is observed. In contrast, the lower mismatch BaF2 on (100) InP system (5%), displays a locally ‘‘commensurate’’ interface with closely spaced misfit dislocations. These observations demonstrate that epitaxy can occur with or without strong bonding across the substrate overlayer interface, depending on the lattice mismatch. The discovery of a truly incommensurate, epitaxial interface [in the BaF2 on (111) Ge system] is furthermore quite unique.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Phase formation by ion beam mixing in Ni/Al, Pd/Al, and Pt/Al bilayers

M. Nastasi, L. S. Hung, and J. W. Mayer

Appl. Phys. Lett. 43, 831 (1983); http://dx.doi.org/10.1063/1.94511 (3 pages) | Cited 52 times

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Ion beam and thermal reactions in thin‐film bilayers of Ni/Al, Pd/Al, and Pt/Al have been investigated using electron diffraction and Rutherford backscattering (RBS). Ion mixing was performed with 600‐keV Xe ions at room temperature with doses ranging between 0.25 to 12×1015 ions/cm2. The compositions of the ion induced crystalline phases, NiAl and PdAl, differ both from the overall atomic compositions of the ion mixed layers (as determined by RBS) and from the compositions of the layers obtained by thermal annealing. In Pt/Al bilayers ion mixing forms an amorphous region with atomic composition Pt40Al60 while thermal annealing shows the formation of crystalline Pt2Al3. We believe that actual crystal compound formation during mixing is dependent on the high quench rate in the collision cascade region.
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61.80.Jh Ion radiation effects
61.66.Dk Alloys
64.70.K- Solid-solid transitions
64.60.My Metastable phases

Ferroelectric properties of poly(vinylidenefluoride‐trifluoroethylene) copolymer thin films

Kuniko Kimura and Hiroji Ohigashi

Appl. Phys. Lett. 43, 834 (1983); http://dx.doi.org/10.1063/1.94512 (3 pages) | Cited 37 times

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The ferroelectric, piezoelectric, and pyroelectric characteristics in thin films (0.5–2.5 μm thick) of a copolymer composed of 74 mol % vinylidenefluoride and 26 mol % trifluoroethylene have been studied. They maintain remarkable ferroelectricity similar to that found in the thicker films of this copolymer. Both the temperature dependence of the reciprocal dielectric constant 1/ϵ and the biasing field dependence of the phase transition temperature Tc indicate the phase transition to be of a first order. A large pyroelectric coefficient (35–50 μC/m2 K) and the significant piezoelectricity related to e33 have been found in thin films of this copolymer.
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77.80.B- Phase transitions and Curie point
77.70.+a Pyroelectric and electrocaloric effects
77.65.-j Piezoelectricity and electromechanical effects
77.55.-g Dielectric thin films

Extended x‐ray absorption fine structure studies of diffused copper impurities in ZnSe

A. I. Goldman, E. Canova, Y. H. Kao, B. J. Fitzpatrick, R. N. Bhargava, and James C. Phillips

Appl. Phys. Lett. 43, 836 (1983); http://dx.doi.org/10.1063/1.94513 (3 pages) | Cited 2 times

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We have performed the first extended x‐ray absorption fine structure investigation of the local environment around dilute copper impurities diffused into the II‐VI semiconductor ZnSe. An average first nearest neighbor distance of 2.32±0.06 Å is obtained. Our results indicate a rather large distortion of the local environment surrounding the copper impurities and/or displacement of these impurity atoms from simple substitutional sites (CuZn) and high symmetry interstitial sites (CuI).
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.70.Dm X-ray absorption spectra
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
61.72.jd Vacancies
61.72.jj Interstitials

Modified palladium metal‐oxide‐semiconductor structures with increased ammonia gas sensitivity

F. Winquist, A. Spetz, M. Armgarth, C. Nylander, and I. Lundström

Appl. Phys. Lett. 43, 839 (1983); http://dx.doi.org/10.1063/1.94514 (3 pages) | Cited 41 times

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It is known that palladium metal‐oxide‐semiconductor (Pd‐MOS) structures are sensitive detectors for hydrogen gas. We show that the evaporation of a thin film of catalytically active metals on top of the structure can increase the sensitivity towards ammonia considerably. It was found that the thin metal must be in contact with the oxide to cause the increased sensitivity. The largest increase was observed with the transition metals Ir and Pt. The ammonia sensitivity could be enhanced about 60 times compared to that of an unmodified structure
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85.30.-z Semiconductor devices
82.30.Vy Homogeneous catalysis in solution, polymers and zeolites
51.90.+r Other topics in the physics of gases (restricted to new topics in section 51)
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

Photoelectric probing of inhomogeneity in undoped, semi‐insulating GaAs crystals

Yoh Mita, Sumio Sugata, and Noriaki Tsukada

Appl. Phys. Lett. 43, 841 (1983); http://dx.doi.org/10.1063/1.94521 (3 pages) | Cited 8 times

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Photocurrent distribution profiles in undoped, semi‐insulating GaAs crystals have been investigated under 1.06‐μm laser light irradiation. Results were compared with distributions of leakage current, etch pit density, and optical absorption at the same wavelength. It has been shown that inhomogeneities in undoped GaAs crystals have been observed by this method, which are closely related with etch pit density distribution.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors

Current‐voltage transients in (Cd,Zn)S/CuInSe2 solar cells

R. R. Potter and J. R. Sites

Appl. Phys. Lett. 43, 843 (1983); http://dx.doi.org/10.1063/1.94522 (3 pages) | Cited 3 times

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Transients in the current‐voltage characteristics of (Cd,Zn)S/CuInSe2 solar cells after sudden changes in illumination are reported. The transients are found to vary with bias across the cell, intensity, temperature, illumination wavelength, and recent illumination history. Multiple trapping levels, primarily in the CuInSe2 near the interface, are seen as responsible for the observed dc voltage shift and are photoexcited in less than 1 ms. Relaxation in the dark takes tens of seconds and appears dominated by states in the (Cd,Zn)S which gives wavelength dependent effects on fill factor and transient decay.
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84.60.Jt Photoelectric conversion
85.30.-z Semiconductor devices

Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices

I. J. Fritz, L. R. Dawson, and T. E. Zipperian

Appl. Phys. Lett. 43, 846 (1983); http://dx.doi.org/10.1063/1.94523 (3 pages) | Cited 36 times

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We report the first Hall effect and resistivity measurements on strained‐layer superlattices (SLS’s) in the (In,Ga)As system. The samples, grown by molecular beam epitaxy, had 60 periods of alternating, 120‐Å‐thick In0.2Ga0.8 As and GaAs layers. Both uniform‐doped and modulation‐doped structures (with Si donors) were studied. Low‐temperature mobilities of over 3×104 cm2/Vs were obtained for structures with doping in only the central 30‐Å region of each GaAs layer. Our results are comparable to reported results on similar (Al,Ga)As superlattices, confirming that high crystalline quality can be obtained in SLS’s with significant mismatch (∼1.4%) and many interfaces (>100).
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects

Synthesis of metastable, semiconducting Ge‐Sn alloys by pulsed UV laser crystallization

S. Oguz, William Paul, T. F. Deutsch, B‐Y. Tsaur, and D. V. Murphy

Appl. Phys. Lett. 43, 848 (1983); http://dx.doi.org/10.1063/1.94524 (3 pages) | Cited 43 times

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Thin microcrystalline films of the metastable semiconducting alloy Ge1−xSnx (x≊0.22) have been formed using excimer laser radiation to crystallize amorphous sputtered films on glass and semiconducting crystalline substrates. X‐ray diffraction, electroreflectance, and Raman spectroscopy have been used to characterize the semiconducting material which is stable to at least 200 °C. The study demonstrates the possibility of extending earlier studies of amorphous Ge1−xSnx alloys into a crystalline regime with a direct band‐gap variable with x from 0 up to about 0.5 eV. The crystallization technique is potentially applicable to the formation of other metastable semiconducting compounds of device potential.
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68.55.-a Thin film structure and morphology
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Effect of pH on the production of chalcopyrite CuInSe2 prepared by spray pyrolysis

Clayton W. Bates, Masakaza Uekita, Kim F. Nelson, Cammy R. Abernathy, and John B. Mooney

Appl. Phys. Lett. 43, 851 (1983); http://dx.doi.org/10.1063/1.94525 (2 pages) | Cited 8 times

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Thin films (∼1 μm) of CuInSe2 were prepared by spray pyrolysis from solutions with various initial Cu:In:Se ratios and in which 75–90% of the acid was neutralized. The substrate temperature was varied between 225 and 300 °C. The chalcopyrite structure dominated the as‐sprayed films with 90% of the acid neutralized and 300 °C substrate temperature. At 225 °C all films were sphalerite independent of the degree of acid neutralization. Unlike previous studies which only produced the sphalerite structure in films prepared from unneutralized solutions, the present study indicates that the chalcopyrite phase can be produced in as‐sprayed films with a range of initial ratios.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.66.Fn Inorganic compounds

Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor

Shintaro Miyazawa, Yasunobu Ishii, Satoru Ishida, and Yasushi Nanishi

Appl. Phys. Lett. 43, 853 (1983); http://dx.doi.org/10.1063/1.94526 (3 pages) | Cited 77 times

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The threshold voltage of a GaAs metal‐semiconductor field‐effect transistor (MESFET) fabricated on a liquid encapsulated Czochralski grown, semi‐insulating substrate was found to be influenced by growth‐induced dislocations. Field‐effect transistors located at less than 20–30 μm from a dislocation exhibited a threshold voltage lower than that of FET’s located far from a dislocation. The maximum difference in threshold voltage of FET’s located at less than and more than this critical distance was obtained to be about 300 mV. The first definitive correlation between dislocations and FET threshold voltage is reported.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
72.80.Ey III-V and II-VI semiconductors
85.30.Tv Field effect devices

Measurements of threshold carrier density of III‐V semiconductor laser diodes

C. B. Su and R. Olshansky

Appl. Phys. Lett. 43, 856 (1983); http://dx.doi.org/10.1063/1.94527 (3 pages) | Cited 8 times

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A simple and accurate method is described for measurements of the carrier density at lasing threshold in double heterostructure diode lasers. The carrier densities measured are compared with those deduced from differential carrier lifetime measurements. Excellent agreement is obtained for the two independent methods.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

X‐ray photoelectron spectroscopy study of the surface chemistry of freon‐oxygen plasma etched silicon

J. H. Thomas and J‐S. Maa

Appl. Phys. Lett. 43, 859 (1983); http://dx.doi.org/10.1063/1.94528 (3 pages) | Cited 16 times

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X‐ray photoelectron spectroscopy has been used to study residual film formation on silicon exposed to an oxygen‐containing CF4 plasma. Experimental results indicate that the plasma reaction produces a surface phase SixOFy, which varies in thickness with the O content of the plasma. Film thickness is shown to correlate with the previously observed etch rate dependence on oxygen content.
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81.65.-b Surface treatments
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.30.De Semiconductor-device characterization, design, and modeling

Field dependence of two large hole capture cross sections in thermal oxide on silicon

Joseph Jengtao Tzou, Jack Yuan‐Chen Sun, and Chih‐Tang Sah

Appl. Phys. Lett. 43, 861 (1983); http://dx.doi.org/10.1063/1.94529 (3 pages) | Cited 17 times

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The oxide field dependence of the hole capture cross sections of two oxide hole traps is reported. The capture cross section varies with the average oxide field as E−nox with n≂0.6 for the 10−13 cm2 hole trap and n≂0.4 for the 10−14 cm2 hole trap. The observed field dependences can be explained by the potential lowering of a highly localized neutral potential, V(r)=A/rm, with m=4 for the 10−13 cm2 hole trap and m=6.5 for the 10−14 cm2 hole trap.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
85.30.Tv Field effect devices

Direct observation of lattice distortion in a strained‐layer superlattice

J. M. Brown, N. Holonyak, M. J. Ludowise, W. T. Dietze, and C. R. Lewis

Appl. Phys. Lett. 43, 863 (1983); http://dx.doi.org/10.1063/1.94530 (3 pages) | Cited 13 times

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The structure of strained‐layer quantum well heterostructures grown by metalorganic chemical vapor deposition has been examined using both conventional and high resolution electron microscopy. It has been possible to show that the lattice mismatch in superlattice systems containing strain of up to 7.1×10−3 is accommodated by the introduction of a tetragonal expansion and compression of the lattice of successive layers. This can be seen in the splitting of the (001) spots in the electron diffraction pattern and by the bending of (111) lattice fringes at the heterojunction interfaces.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.66.Bi Elemental solids
61.66.Dk Alloys

Orientation effect reduction through capless annealing of self‐aligned planar GaAs Schottky barrier field‐effect transistors

R. A. Sadler and L. F. Eastman

Appl. Phys. Lett. 43, 865 (1983); http://dx.doi.org/10.1063/1.94531 (3 pages) | Cited 1 time

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A reduction in the orientation effect on self‐aligned ion‐implanted planar GaAs Schottky barrier field‐effect transistors (FET’s) has been found. The FET’s were fabricated using capless annealing to avoid thermal stress that occurs at a dielectric/GaAs interface during capped annealing. Both mean and standard deviation in FET threshold voltage as a function of gate length are compared for FET’s oriented in the two perpendicular [110] directions. Very little orientation dependence is observed. Similar high‐speed switching operation is also found for either orientation. These results indicate that stress‐enhanced preferential lateral diffusion which appears to be a major factor in the orientation effect can be reduced through capless annealing.
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85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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