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15 Jun 1984

Volume 44, Issue 12, pp. 1105-1164


Multistability and soliton modes in nonlinear microwave resonators

A. Gasch, B. Wedding, and D. Jäger

Appl. Phys. Lett. 44, 1105 (1984); http://dx.doi.org/10.1063/1.94658 (3 pages) | Cited 7 times

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Nonlinear optical cavities are known to exhibit bistability and multistability. In this letter the properties of microwave Fabry–Perot and ring resonators with second‐order dispersive nonlinearity are analyzed. Experimental results such as multiple‐valued output versus input characteristics, resonance curves, and waveforms are described. On the basis of harmonic and subharmonic generation a new mechanism is found leading to multistability, which is quantitatively attributed to well‐defined soliton modes propagating in the resonator.
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42.65.-k Nonlinear optics
84.30.Bv Circuit theory
84.40.-x Radiowave and microwave (including millimeter wave) technology

Spin polarized photoemission from GaAs and Ge: Temperature dependence of the threshold polarization

R. Allenspach, F. Meier, and D. Pescia

Appl. Phys. Lett. 44, 1107 (1984); http://dx.doi.org/10.1063/1.94659 (3 pages) | Cited 7 times

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The temperature dependence of the photoelectron polarization is identical for GaAs with positive and negative electron affinity, as well as for Ge. It is concluded that the depolarization is due to a surface effect.
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81.65.-b Surface treatments

Dependence of astigmatism, far‐field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry

Takayoshi Mamine

Appl. Phys. Lett. 44, 1109 (1984); http://dx.doi.org/10.1063/1.94660 (3 pages)

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The effects of active layer thickness on the astigmatism, the angle of far‐field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far‐field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.
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42.50.-p Quantum optics
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Emission spectra, surface quality, and mechanism of excimer laser etching of polyimide films

G. Koren and J. T. C. Yeh

Appl. Phys. Lett. 44, 1112 (1984); http://dx.doi.org/10.1063/1.94661 (3 pages) | Cited 56 times

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Emission spectra in the visible and ultraviolet range, and scanning electron microscopy of polyimide films exposed to 193, 248, and 351‐nm laser radiation were used to elucidate the mechanism of the laser etching process. It was found that rough laser etched surfaces, with nonuniformities larger than 0.5 μm, are accompanied by a continuum emission from the blow‐off materials, while smooth surfaces are characterized by strong C2 emission in the A 3Πg→X′ 3Πμ bands. Smoothly etched surfaces were obtained for all laser wavelengths provided the energy absorbed per unit volume in the surface exceeds a threshold value of (5.0±0.5)×104 J/cm3. It is suggested that surface smoothness results from transient melting and that the laser etching mechanism is mostly a statistical thermodynamic process without complete energy randomization.
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42.62.-b Laser applications
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
78.55.Kz Solid organic materials
79.20.Ds Laser-beam impact phenomena

High resolution photothermal laser probe

C. C. Williams

Appl. Phys. Lett. 44, 1115 (1984); http://dx.doi.org/10.1063/1.94662 (3 pages) | Cited 3 times

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At frequencies near 1 GHz, the acoustic wavelength in argon gas becomes half that of visible light, making possible collinear Bragg scattering of laser light by the sound. This acousto‐optic interaction has been used to detect photothermally generated acoustic power at the surface of solids. This new technique provides a noncontacting probe for the detection of 100–1000‐Å thermal waves with optical resolution. The essential features of the theory behind this new photothermal probe are presented along with a description of the experimental implementation. High resolution images of implanted silicon are included which clearly demonstrate the sensitivity of the probe to variations in the thermal characteristics of solids.
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42.62.-b Laser applications
43.58.+z Acoustical measurements and instrumentation
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

Cleaved‐coupled‐cavity lead‐salt diode lasers

Wayne Lo

Appl. Phys. Lett. 44, 1118 (1984); http://dx.doi.org/10.1063/1.94663 (2 pages) | Cited 1 time

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A simple technique has been developed for the fabrication of lead‐salt cleaved‐coupled‐cavity diode lasers. The improvement in spectral purity and the reduction in threshold current of these coupled‐cavity lasers will be discussed.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Further characterization of the 4.4‐μm 13C 16O2 cascade laser

R. P. Johnson

Appl. Phys. Lett. 44, 1119 (1984); http://dx.doi.org/10.1063/1.94664 (3 pages) | Cited 3 times

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Nine distinct rotational laser lines of the ([10° 1]I–[10° 0]I) vibrational band of 13C 16O2 near 4 μm have been observed and identified. Wavelength measurements of these lines are given as well as a simplified design for a CO2 cascade laser resonator.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
33.20.Sn Rotational analysis

Dispersion and polarization dependence of mobile carrier optical nonlinearities

K. C. Rustagi

Appl. Phys. Lett. 44, 1121 (1984); http://dx.doi.org/10.1063/1.94655 (2 pages)

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Based on the author’s earlier work, it is shown that the proper inclusion of carrier scattering should strongly modify the frequency and polarization dependence of optical nonlinearities due to mobile carriers in semiconductors. When the momentum relaxation is much faster than the energy relaxation, the intensity dependent refractive index is enhanced, the induced birefringence becomes a sharp function of the difference frequency ωa−ωb, and a collision induced stimulated Raman effect becomes important.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
63.10.+a General theory
72.10.-d Theory of electronic transport; scattering mechanisms
78.20.-e Optical properties of bulk materials and thin films

Single‐ion recombination lasers in CO2 laser‐vaporized target material

O. R. Wood, J. J. Macklin, and W. T. Silfvast

Appl. Phys. Lett. 44, 1123 (1984); http://dx.doi.org/10.1063/1.94656 (3 pages) | Cited 5 times

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Fifteen recombination lasers have been produced in the ionic species of nine elements by focusing eight transversely excited atmospheric pressure CO2 laser beams onto targets of these materials to produce an elongated gain region in the vaporized plasmas. The results include the first lasers in ionized species and also the first visible lasers excited by this process.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Power dependence of the linewidth enhancement term in semiconductor lasers

W. Elsässer

Appl. Phys. Lett. 44, 1126 (1984); http://dx.doi.org/10.1063/1.94657 (3 pages) | Cited 1 time

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The theory of the spectral linewidth of a single longitudinal laser mode is re‐examined on the basis of a phase diffusion model. The contribution to the linewidth resulting from the coupling of phase and amplitude (self‐coupling term described by the enhancement factor α) is investigated exactly. In particular, the commonly used approximation of a small spontaneous emission rate and/or strongly damped relaxation resonance is not applied. The self‐coupling then results no longer in a constant enhanced slope in the Schawlow‐Townes formula. The enhancement linewidth itself is now no linear function of the inverse optical power and decreases to zero in the limit of high spontaneous emission rates and small optical power. Therefore, deviations from the linear dependence of the mode linewidth on mode power are predicted.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Comparison of XeF2 and F‐atom reactions with Si and SiO2

Dale E. Ibbotson, Daniel L. Flamm, John A. Mucha, and Vincent M. Donnelly

Appl. Phys. Lett. 44, 1129 (1984); http://dx.doi.org/10.1063/1.94665 (3 pages) | Cited 49 times

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Silicon gasification by XeF2 is compared with F‐atom etching under conditions typical of those used in plasma etching. Temperatures ranged from −17 to 360 °C and XeF2 pressures were between 0.05 and 2 Torr. Silicon etching by XeF2 shows a sharply different etch rate/temperature dependence than the Si/F or Si/F2 reaction systems; there is no detectable reaction between XeF2 and SiO2 in contrast to the F‐atom/SiO2 system. These data indicate that physisorption can limit silicon etching by XeF2 and show that basic studies which use XeF2 as a model compound for the etching of silicon and SiO2 by F atoms should be interpreted with caution.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Bx Metals, semimetals, and alloys

Sintering of new oxide ceramics using a high power cw CO2 laser

M. Okutomi, M. Kasamatsu, K. Tsukamoto, S. Shiratori, and F. Uchiyama

Appl. Phys. Lett. 44, 1132 (1984); http://dx.doi.org/10.1063/1.94666 (3 pages) | Cited 12 times

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The sintering of ceramic oxide powders has been investigated using a high power CO2 laser as the heat source. The laser sintering method is very useful for the densification of oxides such as ZrO2, HfO2, and Y2O3 which have high melting points above 2000 °C. The new ceramic in the ternary system of (ZrO2‐Y2O3‐HfO2) processed by the laser method has a high melting point (2850 °C) and a hardness of about 1800 kg/mm2. The new oxide ceramic is composed of the crystalline phase of tetragonal ZrO2 and ZrO2 HfO2 Y2O3 solid solution, and does not show any phase transitions at high temperatures.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
42.62.-b Laser applications

Characterization and optical properties of arrays of small gold particles

H. G. Craighead and G. A. Niklasson

Appl. Phys. Lett. 44, 1134 (1984); http://dx.doi.org/10.1063/1.94667 (3 pages) | Cited 42 times

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Square arrays of 20–35‐nm‐diam gold particles with 50‐nm spacings were formed on thick sapphire substrates by electron beam lithography. After annealing at 125 °C the particles had an approximately circular projection on the substrate with a slightly smaller dimension in the perpendicular direction as inferred from scanning electron microscopy. Optical transmission measurements were made on 15‐μm square areas of particles using an optical microscope modified for microspectroscopy. The regular geometry of the well characterized samples makes possible a detailed comparison to theory.
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68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
41.75.Fr Electron and positron beams
78.66.Bz Metals and metallic alloys

Noncontact thermal‐wave imaging of subsurface structure with infrared detection

H. Ermert, F. H. Dacol, R. L. Melcher, and T. Baumann

Appl. Phys. Lett. 44, 1136 (1984); http://dx.doi.org/10.1063/1.94668 (3 pages) | Cited 6 times

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A noncontact thermal imaging system using infrared detection is described. The system uses a chopped and scanned electron beam as a heat source to produce a temperature pattern on the surface of the sample. The resulting thermal radiation is detected and used for numerical image reconstruction of the sample’s subsurface structure.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
81.70.-q Methods of materials testing and analysis
41.75.Fr Electron and positron beams

Electrical properties of selectively deposited tungsten thin films

W. A. Metz, J. E. Mahan, V. Malhotra, and T. L. Martin

Appl. Phys. Lett. 44, 1139 (1984); http://dx.doi.org/10.1063/1.94669 (3 pages) | Cited 2 times

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Tungsten thin films were selectively deposited onto silicon surfaces by a low pressure chemical vapor deposition process utilizing, sequentially, silicon reduction and then hydrogen reduction of WF6. Surface selectivity and conformal coverage of microelectronic structures is demonstrated. X‐ray diffraction and Auger analysis indicate the films are well crystallized, with the possibility of a fraction of a percent oxygen content. The room‐temperature resistivity is ∼18 μΩ cm, composed of residual and intrinsic contributions of 12 and 6 μΩ cm, respectively. The Hall effect indicates the material is predominantly a hole conductor, with a relatively low Hall mobility that is consistent with the large residual resistivity. Difficulties with a simple interpretation of the Hall effect are discussed.
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73.61.At Metal and metallic alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High‐sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy

C. Y. Chen, B. L. Kasper, and H. M. Cox

Appl. Phys. Lett. 44, 1142 (1984); http://dx.doi.org/10.1063/1.94670 (3 pages) | Cited 13 times

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We report a Ga0.47In0.53As photoconductive detector with a receiver sensitivity better than that of a Ga0.47In0.53As pin photodiode. This is the first time that a 1.3‐μm, 1‐Gbit/s receiver sensitivity for a photoconductive detector as high as −34.4 dBm was achieved at a bit error rate of 10−9. This result represents a 2.9‐dB improvement over the Ga0.47In0.53As pin photodiode used in our measurements. Furthermore, this detector can operate with bias voltage less than 2 V, representing a circuit simplicity over certain detectors. Our study concludes that photoconductive detectors are attractive devices for high data‐rate lightwave communication applications.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.55.-a Thin film structure and morphology
81.10.Bk Growth from vapor

Metal‐amorphous silicon‐silicon tunnel rectifier

E. S. Yang, Q. H. Hua, D. K. Yang, G. S. Yang, and P. S. Ho

Appl. Phys. Lett. 44, 1144 (1984); http://dx.doi.org/10.1063/1.94671 (3 pages) | Cited 1 time

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We report a new metal‐semiconductor thin‐film diode with an I‐V characteristic similar to that of a p‐n junction. Its forward bias current is dominated by majority‐carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I‐V curves, and the Auger depth profile of the interfacial layer are presented.
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73.40.Ns Metal-nonmetal contacts
73.40.Gk Tunneling
68.55.-a Thin film structure and morphology
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

GaAs/(Ca,Sr)F2/(001) GaAs lattice‐matched structures grown by molecular beam epitaxy

S. Siskos, C. Fontaine, and A. Munoz‐Yague

Appl. Phys. Lett. 44, 1146 (1984); http://dx.doi.org/10.1063/1.94672 (3 pages) | Cited 40 times

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Epitaxial growth of GaAs/(Ca, Sr) F2/GaAs structures by means of molecular beam epitaxy has been demonstrated. It has been shown that it was possible to grow layers with good crystalline quality and no noticeable interdiffusion at the interfaces. In addition, the uppermost GaAs layers present interesting electrical properties, exhibiting electron Hall mobilities of about 1300 cm2/Vs.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Ty Semiconductor-insulator-semiconductor structures
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

W. I. Wang

Appl. Phys. Lett. 44, 1149 (1984); http://dx.doi.org/10.1063/1.94673 (3 pages) | Cited 107 times

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We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high‐energy electron diffraction. Low‐temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the epitaxial layers. It is shown for the first time that antiphase disorder could be suppressed. The doped AlGaAs grown directly on Si substrates exhibited PL efficiency similar to that of AlGaAs grown on GaAs substrates.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.J- Electron diffraction and scattering
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
78.40.Fy Semiconductors

Correlation of thermal‐wave imaging to other analysis methods

Jiří Marek and Yale E. Strausser

Appl. Phys. Lett. 44, 1152 (1984); http://dx.doi.org/10.1063/1.94674 (3 pages) | Cited 7 times

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Thermal‐wave microscopy is a recent innovation which is potentially very useful for characterizing defects in semiconductor materials. To help understand the mechanisms which generate contrast in thermal‐wave micrographs we have done a correlation study with optical microscopy, backscattered electron imaging, electron beam induced current imaging, light beam induced current imaging, and x‐ray topography. For this study we used a section of a polycrystalline silicon solar cell. The results show a strong correlation for both crystalline defects and for electrically active defects in this material but thermal‐wave microscopy has the advantages of speed of analysis and lack of specimen preparation required.
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07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
61.72.-y Defects and impurities in crystals; microstructure
43.58.+z Acoustical measurements and instrumentation

Detection of SiH2 in silane and disilane glow discharges by frequency modulation absorption spectroscopy

J. M. Jasinski, E. A. Whittaker, G. C. Bjorklund, R. W. Dreyfus, R. D. Estes, and R. E. Walkup

Appl. Phys. Lett. 44, 1155 (1984); http://dx.doi.org/10.1063/1.94675 (3 pages) | Cited 26 times

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The reactive species SiH2 has been directly observed in dc glow discharges using the technique of frequency modulation absorption spectroscopy. The spatial distribution of SiH2 in the discharge and the relative amounts of SiH2 in silane and disilane discharges have been measured.
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33.20.Kf Visible spectra
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Effect of layer size on lattice distortion in strained‐layer superlattices

J. M. Brown, N. Holonyak, R. W. Kaliski, M. J. Ludowise, W. T. Dietze, and C. R. Lewis

Appl. Phys. Lett. 44, 1158 (1984); http://dx.doi.org/10.1063/1.94676 (3 pages) | Cited 20 times

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The accommodation of lattice mismatch in strained‐layer GaAs‐InxGa1−xAs (x≊0.27) superlattices grown by metalorganic chemical vapor deposition has been examined as a function of layer thickness using transmission electron microscopy. The degree of distortion from cubic is shown to be dependent on the layer thickness and at sufficiently large layer sizes (≳180 Å) dislocations are introduced at the interfaces.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Ferromagnetic resonance imaging using photothermal deflection

U. Netzelmann, U. Krebs, and J. Pelzl

Appl. Phys. Lett. 44, 1161 (1984); http://dx.doi.org/10.1063/1.94677 (2 pages) | Cited 4 times

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The local variation of the ferromagnetic (FMR) resonance absorption scanning along the surface of ferromagnetic metallic films was studied with the photothermal deflection technique. Using a modified commercial electron paramagnetic resonance spectrometer the FMR of an inhomogeneous Ni film was measured as a function of the external magnetic field and laser beam position. The local resolution which depends on characteristics of the laser probe beam and on the thermal diffusion length of the surrounding medium was investigated at different modulation frequencies between 35 Hz and 1 kHz.
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76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
42.30.-d Imaging and optical processing
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

19.1% efficient silicon solar cell

M. A. Green, A. W. Blakers, Jiqun Shi, E. M. Keller, and S. R. Wenham

Appl. Phys. Lett. 44, 1163 (1984); http://dx.doi.org/10.1063/1.94678 (2 pages) | Cited 17 times

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Substantial improvements in silicon solar cell performance are reported. These improvements have been obtained primarily by improved cell open circuit voltage obtained by improved passivation of the cell emitter region. Careful attention to optical design and to the minimization of parasitic resistances has also resulted in the demonstration of short circuit current densities and fill factors comparable to the best values reported for silicon.
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84.60.Jt Photoelectric conversion
85.30.-z Semiconductor devices
72.40.+w Photoconduction and photovoltaic effects
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