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15 May 1984

Volume 44, Issue 10, pp. 941-1018

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Monolithic optoelectronic integration of a GaAlAs laser, a field‐effect transistor, and a photodiode

N. Bar‐Chaim, K. Y. Lau, I. Ury, and A. Yariv

Appl. Phys. Lett. 44, 941 (1984); http://dx.doi.org/10.1063/1.94598 (3 pages) | Cited 5 times

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A low threshold buried heterostructure laser, a metal‐semiconductor field‐effect transistor, and a p‐i‐n photodiode have been integrated on a semi‐insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices

Temperature dependence of threshold current of injection lasers for short pulse excitation

N. K. Dutta, N. A. Olsson, J. P. Heritage, and P. L. Liu

Appl. Phys. Lett. 44, 943 (1984); http://dx.doi.org/10.1063/1.94605 (2 pages) | Cited 5 times

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We report measurements of the temperature dependence of the threshold current of GaAs, 1.3‐μm InGaAsP, and 1.5‐μm InGaAsP double heterostructure lasers using short electrical pulses. T0∼200 K is observed for all the lasers. These high T0 values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T0 of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Low threshold GaInAsP/InP buried‐heterostructure lasers with a chemically etched and mass‐transported mirror

Z. L. Liau, J. N. Walpole, and D. Z. Tsang

Appl. Phys. Lett. 44, 945 (1984); http://dx.doi.org/10.1063/1.94606 (3 pages) | Cited 12 times

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The mass‐transport technique has been used to improve chemically etched mirrors on GaInAsP/InP double heterostructure wafers. Vertical and flat mirror facets have been obtained. Buried‐heterostructure lasers fabricated with one such mirror and the other mirror cleaved show high device yield with threshold currents as low as 6 mA and differential quantum efficiency as high as 33%.
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42.55.Px Semiconductor lasers; laser diodes
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
81.65.-b Surface treatments
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Four‐wave mixing in semi‐insulating InP and GaAs using the photorefractive effect

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, and A. A. Ballman

Appl. Phys. Lett. 44, 948 (1984); http://dx.doi.org/10.1063/1.94607 (3 pages) | Cited 61 times

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The photorefractive effect has been observed for the first time in semi‐insulating InPe:Fe and GaAsCr. These materials are sensitive and versatile recording media for high bit rate parallel optical processing in the 0.8–1.8‐μm spectral region using injection lasers of milliwatt power levels.
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78.20.Jq Electro-optical effects
42.65.-k Nonlinear optics

Excimer laser induced deposition of InP and indium‐oxide films

V. M. Donnelly, M. Geva, J. Long, and R. F. Karlicek

Appl. Phys. Lett. 44, 951 (1984); http://dx.doi.org/10.1063/1.94608 (3 pages) | Cited 31 times

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InP and In‐oxide films have been deposited on quartz, GaAs, and InP substrates by excimer laser induced photodecomposition of (CH3)3InP(CH3)3 and P(CH3)3 vapors at 193 nm. The oxide film refractive index and stoichiometry are close to In2O3. Phosphorus incorporation in the films was greatly enhanced by focusing the laser beam to promote multiple‐photon dissociation processes. These conditions also lead to enhanced carbon inclusion in the films, due to formation of species such as CH and CH2 in the gas phase. However, this carbon inclusion could be suppressed by focusing the beam onto the surface at normal incidence. In the irradiated zone InP could be deposited with P(CH3)3‐to‐(CH3)3InP(CH3)3 ratios of only ∼1:1. The technique offers several potential advantages over conventional metalorganic chemical vapor deposition, including lower temperature, enhanced rates, safer gases, and three‐dimensional film composition control. Strong atomic In emission is observed in the gas phase above the depositing film, due to a multiple photon dissociation process. Gas phase fluorescence from P, CH, and C was also observed. These emissions give insight into the photodecomposition mechanism and also serve as a monitor of metalorganic precursor concentrations.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.20.Ds Laser-beam impact phenomena
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.50.Hp Processes caused by visible and UV light

Theory for cross coupling in ultrasonic transducer arrays

R. L. Baer and G. S. Kino

Appl. Phys. Lett. 44, 954 (1984); http://dx.doi.org/10.1063/1.94609 (3 pages)

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Ultrasonic transducer arrays suffer from the effects of acoustic cross coupling. The beam pattern and temporal response are degraded. The mechanism for acoustic cross coupling has been postulated to be surface wave propagation along the array. Our theory has shown that surface waves are indeed responsible, and that they may propagate in either the backing or load medium. The new theory is based on an extension to periodic systems of the theory for excitation of a uniform semi‐infinite substrate by a single line source. It provides a quantitative model for cross coupling, as well as physical insight into its mechanism.
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43.20.Bi Mathematical theory of wave propagation
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques

Neutralization of a propagating intense ion beam in vacuum

R. N. Sudan

Appl. Phys. Lett. 44, 957 (1984); http://dx.doi.org/10.1063/1.94597 (2 pages) | Cited 7 times

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A simple analysis of the neutralization of an intense ion beam propagating in vacuum is presented which predicts the principal results of previous numerical simulation and experiments.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
29.27.Eg Beam handling; beam transport

Extended growth of subgrain‐boundary‐free silicon‐on‐insulator via thermal gradient variation

El‐Hang Lee

Appl. Phys. Lett. 44, 959 (1984); http://dx.doi.org/10.1063/1.94610 (3 pages) | Cited 10 times

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Morphological variations of graphite strip heater recrystallized silicon‐on‐insulator formed in the initial stage of seeded growth have been analyzed to examine the thermal gradient effect upon the growth stability. Systematic transition of the stable growth into an orderly breakdown of faceted, cellular, and dendritic configurations has been attributed to the decreasing temperature gradient in this region. There are indications that constitutional supercooling could be responsible for the interface stability breakdown and that increased thermal gradients can suppress the onset of breakdown and maintain the stable growth over an extended distance.
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68.55.-a Thin film structure and morphology
61.72.Mm Grain and twin boundaries
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Crystallographic orientation control of silicon stripes in SiO2 grooves using a new double laser annealing technique

Koji Egami, Masakazu Kimura, and Tsuneo Hamaguchi

Appl. Phys. Lett. 44, 962 (1984); http://dx.doi.org/10.1063/1.94611 (3 pages) | Cited 7 times

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Crystallographic orientation control using a new double laser annealing of silicon stripes in SiO2 grooves is presented. In the laser recrystallization of silicon stripes in the structure consisting of SiO2 grooves/polysilicon sublayer/quartz glass substrates, first, a part of the Si stripe is intentionally recrystallized by a cw Nd:yttrium aluminum garnet laser to obtain 〈100〉 texture with a small grain size. Next, using these 〈100〉 oriented Si grains as seed crystals, 〈100〉 oriented large Si stripes are obtained by scanning a cw Ar ion laser along the stripe direction. This double laser annealing technique for orientation control can potentially be used to fabricate three‐dimensional devices.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena

Effects of mercury and krypton on the glow discharge decomposition of disilane

Jean Kenne, Makoto Konagai, and Kiyoshi Takahashi

Appl. Phys. Lett. 44, 965 (1984); http://dx.doi.org/10.1063/1.94612 (3 pages)

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The effects of mercury and krypton on the glow discharge decomposition of disilane have been studied. It is found that mercury‐sensitized plasma decomposition of disilane yields higher deposition rate hydrogenated amorphous silicon (a‐Si:H) films. At a deposition rate as high as 60 Å/s no change was observed on the dark and photoconductivities. A similar effect was obtained in krypton‐sensitized plasma decomposition of disilane.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
52.80.Hc Glow; corona

GaAs light‐emitting diodes fabricated on Ge‐coated Si substrates

Robert M. Fletcher, D. Ken Wagner, and Joseph M. Ballantyne

Appl. Phys. Lett. 44, 967 (1984); http://dx.doi.org/10.1063/1.94613 (3 pages) | Cited 34 times

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Light‐emitting diodes have been fabricated in GaAs grown by metalorganic chemical vapor deposition on vapor‐deposited epitaxial Ge films on Si substrates. The light‐emitting junction was formed by zinc diffusion into the n‐type GaAs layer. Room‐temperature light emission centered at 872 nm has been observed.
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85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
66.30.J- Diffusion of impurities

X‐ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2

R. P. Vasquez, M. H. Hecht, F. J. Grunthaner, and M. L. Naiman

Appl. Phys. Lett. 44, 969 (1984); http://dx.doi.org/10.1063/1.94614 (3 pages) | Cited 49 times

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X‐ray photoelectron spectroscopy has been used to study the composition of 100‐Å thermally grown SiO2 films that have been thermally nitrided in ammonia. The SiOxNy/Si interface was studied both by chemical depth profiling of the oxynitride and by removal of the Si substrate with XeF2. It is found that N is distributed throughout the film, but with the concentration higher at the surface and in a region centered 25 Å from the film/substrate interface. The interface region itself is found to be oxygen‐rich relative to the rest of the film. Possible models which can explain these results are discussed.
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68.60.-p Physical properties of thin films, nonelectronic
81.65.-b Surface treatments
77.55.-g Dielectric thin films
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

X‐ray study on impurity diffusion in a GaAs‐AlAs superlattice

H. Terauchi, S. Sekimoto, N. Sano, H. Kato, and M. Nakayama

Appl. Phys. Lett. 44, 971 (1984); http://dx.doi.org/10.1063/1.94615 (3 pages) | Cited 4 times

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The mechanism of Zn diffusion in a GaAs‐AlAs superlattice has been studied by measuring the x‐ray satellite intensity. The satellite intensity decreases and its width increases with increasng annealing time. The local structure around Zn atom is discussed.
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66.30.J- Diffusion of impurities
61.05.C- X-ray diffraction and scattering
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic

Polymethyl methacrylate resist sensitivity enhancement in x‐ray lithography by in situ polymerization

W.‐T. Liu, J. C. Corelli, A. J. Steckl, J. A. Moore, and J. Silverman

Appl. Phys. Lett. 44, 973 (1984); http://dx.doi.org/10.1063/1.94616 (3 pages)

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X‐ray‐induced grafting of acrylic acid to poly (methyl methacrylate) (PMMA) increases the resist sensitivity by at least three orders of magnitude. Scanning electron microscopy of grafted PMMA revealed micron and submicron features for dose levels as small as 0.1–1 mJ/cm2, thus demonstrating the possibility of using this technique for x‐ray lithography.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.50.-m Photochemistry
61.80.Cb X-ray effects
82.35.-x Polymers: properties; reactions; polymerization

A novel technique to fabricate GaInAsP/InP buried heterostructure laser diodes

K. Imanaka, H. Horikawa, Y. Kawai, and M. Sakuta

Appl. Phys. Lett. 44, 975 (1984); http://dx.doi.org/10.1063/1.94617 (3 pages) | Cited 1 time

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A chemical etching process to obtain a double heterostructure of InP‐GaInAsP‐InP with a very narrow active layer width is proposed in which three layers are etched preferentially. The quaternary layer works as the inner etching mask; the cladding layers above and below the active layer show reversed‐mesa and normal‐mesa shapes, respectively. The method is used to fabricate a buried heterostructure laser which lases at 1.3 μm on the p‐type InP substrate. The fundamental lateral mode operation with threshold current as low as 15 mA is achieved with 0.8‐μm active layer width.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments
81.10.Fq Growth from melts; zone melting and refining

Corrections to enhanced optical nonlinearity of superlattices

G. Cooperman, L. Friedman, and W. L. Bloss

Appl. Phys. Lett. 44, 977 (1984); http://dx.doi.org/10.1063/1.94618 (3 pages) | Cited 23 times

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In recent publications, a large enhancement of the third order nonlinear optical susceptibility was predicted for GaAs–GaAlAs superlattices, as a result of the band nonparabolicities introduced by the additional periodicity of the superlattice. These predictions, based on the tight binding model, are here extended to the more realistic Kronig–Penney model. Results show that corrections to tight binding are non‐negligible; however, enhancements of χ(3) are still large, but reduced by approximately 30%–50% over previous estimates.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics
68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

80‐MW photoconductor power switch

W. C. Nunnally and R. B. Hammond

Appl. Phys. Lett. 44, 980 (1984); http://dx.doi.org/10.1063/1.94619 (3 pages) | Cited 11 times

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The application of photoconductors to fast rise time, high‐power switching is discussed. We report the successful switching of a 100‐kV system to generate a 1.8‐kA, <5‐ns rise time, 200‐ns duration electrical pulse in a 25‐Ω load using a single photoconductor switch excited by a Q‐switched Nd: glass laser. The photoconductor was a 2.5‐cm‐long bar of single‐crystal, high‐resistivity silicon with a 0.5×0.5 cm cross section. Only a depth of about 1 mm of one side was used for conduction.
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84.30.Ng Oscillators, pulse generators, and function generators
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.60.-q Optoelectronic devices
84.32.Dd Connectors, relays, and switches

Minority‐carrier diffusion lengths in GaP/GaAsxP1−x strained‐layer superlattices

P. L. Gourley, R. M. Biefeld, T. E. Zipperian, and J. J. Wiczer

Appl. Phys. Lett. 44, 983 (1984); http://dx.doi.org/10.1063/1.94620 (3 pages) | Cited 16 times

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We have made the first measurements of the minority‐carrier diffusion lengths L∥ and L⊥ respectively in both n‐ and p‐ type GaP/GaAsxP1−x 〈100〉 strained‐layer superlattices (SLS’s) in directions parallel and perpendicular to the interfaces. Using room‐temperature optical techniques, we find that L⊥≊0.1 μm, which is more than an order of magnitude smaller than L∥≊1.5 μm. The latter is comparable to that measured in the bulk materials which comprise the SLS layers, while the former demonstrates the existence of large potential barriers in both the conduction and valence bands.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs

T. F. Kuech, B. S. Meyerson, and E. Veuhoff

Appl. Phys. Lett. 44, 986 (1984); http://dx.doi.org/10.1063/1.94621 (3 pages) | Cited 19 times

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Disilane (Si2H6) is presented as a new silicon doping source in the metalorganic chemical vapor deposition of GaAs together with comparison results obtained using the conventional silane (SiH4) doping source. The doping characteristics of disilane were studied over a wide range of growth conditions: temperature, gas phase stoichiometry, and disilane concentration in the growth ambient. Silicon incorporation by means of disilane pyrolysis showed no temperature dependence, in sharp contrast to the strong temperature activated dependence found when employing silane. The decomposition reaction of disilane proved to be very efficient, reducing the amount of dopant gas required by about two orders of magnitude at the lower growth temperatures. Electrical measurements on disilane‐doped GaAs yield the same high mobilities as obtained in silane‐doped GaAs films, indicative of low compensation.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.U- Doping and impurity implantation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Determination of the capture cross section and degeneracy factor of Si‐SiO2 interface states

Wendell D. Eades and Richard M. Swanson

Appl. Phys. Lett. 44, 988 (1984); http://dx.doi.org/10.1063/1.94622 (3 pages) | Cited 8 times

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A modified form of deep level transient spectroscopy (DLTS) has been employed to perform energy‐resolved measurements of Si‐SiO2 interface states. Decreasing the height of the trap filling pulse from the order of volts, as in the usual DLTS procedure, to tens of millivolts allows trap filling measurements to be made, rendering possible the use of Shockley–Read–Hall theory to show that the degeneracy factor of interface states is around unity. The energy dependence of the capture cross section in the upper band gap is also calculated from Shockley–Read–Hall theory and is contrasted for oxidation ambients with and without added HCl.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Preparation and properties of hydrogenated amorphous silicon films by glow discharge decomposition of silane in cascade reactors

P. N. Dixit, R. Bhattacharya, O. S. Panwar, and V. V. Shah

Appl. Phys. Lett. 44, 991 (1984); http://dx.doi.org/10.1063/1.94623 (3 pages) | Cited 5 times

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A novel and economical method for the preparation of the hydrogenated amorphous silicon films by glow discharge composition of silane in two reactors connected in cascade is presented. Whereas the films obtained from the first reactor have nearly the same dark and photoconductivity as reported in literature, those from the second reactor exhibit four orders less dark conductivity and one order less photoconductivity for the same deposition conditions.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Single crystalline Si islands on an amorphous insulating layer recrystallized by an indirect laser heating technique for three‐dimensional integrated circuits

R. Mukai, N. Sasaki, T. Iwai, S. Kawamura, and M. Nakano

Appl. Phys. Lett. 44, 994 (1984); http://dx.doi.org/10.1063/1.94624 (3 pages) | Cited 11 times

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A new laser recrystallizing technique for producing single crystalline Si islands on an amorphous insulating layer has been developed. Si islands are recrystallized by indirect Ar ion laser heating utilizing a Si cap. This technique is an effective recrystallizing method for fabricating three‐dimensional integrated circuits. During recrystallization, this technique easily and stably produces a desired temperature profile to eliminate grain boundaries in recrystallized Si islands; the interior of the Si islands is kept cooler than the periphery and crystal growth begins from the interior. This desired temperature profile is realized because an Ar ion laser power is absorbed in the Si cap and heat flow takes place to the Si islands laterally as well as vertically from the heated Si cap through a separation cap. Damage to the underlying layer is not observed, which suggests that the laser beam power is cut in the Si cap. No grain boundaries are observed in more than 90% of the Si islands recrystallized with such an arrangement that laser beam traces include Si islands; the size of the islands is 20×60 μm. Field effect mobility of 460 cm2/Vs is obtained for Si on insulator/metal‐oxide‐semiconductor field‐effect transistors fabricated in the recrystallized Si islands with this technique.
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68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Observation of Hg diffusion in CdTe by means of 40‐MeV O5+ ion backscattering

K. Takita, K. Murakami, H. Otake, K. Masuda, S. Seki, and H. Kudo

Appl. Phys. Lett. 44, 996 (1984); http://dx.doi.org/10.1063/1.94595 (3 pages) | Cited 13 times

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Show Abstract
The diffusion profile of Hg in CdTe crystals was observed by means of heavy ion (40 MeV O5+) backscattering. The near‐surface region of CdTe immersed in Hg was investigated up to 1.4 μm from the surface. The observed Hg profile indicated that the concentration of Hg atom at the surface reached 4×1020 cm−3 and the distribution was interpreted by a simple diffusion model. Temperature dependence of the diffusion coefficient was determined to be D=5×103 exp[(−2.0±0.3) eV/kT] (cm2/s). In the case of CdTe immersed in Hg which contained a small amount of Cd, it was found that Hg diffusion did not occur. These experimental facts suggest that the rate of Hg diffusion is controlled by the diffusion of a Cd vacancy which is introduced by the outdiffusion of Cd atoms from CdTe crystals.
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66.30.J- Diffusion of impurities
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Nonlinear carrier dynamics in GaxIn1−xAsyP1−y compounds

E. Wintner and E. P. Ippen

Appl. Phys. Lett. 44, 999 (1984); http://dx.doi.org/10.1063/1.94596 (3 pages) | Cited 48 times

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The nonlinear recovery dynamics of optically excited carriers in thin layer samples of GaInAsP (1.3 μm, 1.55 μm) and GaInAs (1.65 μm) have been studied by picosecond optical pump‐probe measurements of absorption bleaching using pulses at 1.06 μm for both pump and probe. An evaluation of the data was performed by a careful computer model which takes into account the temporal development of the carrier density and absorption, the spatial averaging of the bleaching, and a convolution with the probe beam. The effective Auger coefficients, determined as curve fitting parameters, were found to be A(1.3 μm)=1.5×10−29 cm6/s, A(1.55 μm) =7.5×10−29 cm6/s, and A(1.65 μm)=9.8×10−29 cm6/s.
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75.20.Ck Nonmetals
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
79.20.Ds Laser-beam impact phenomena

Schottky‐barrier height of ideal metal contacts to GaAs

J. R. Waldrop

Appl. Phys. Lett. 44, 1002 (1984); http://dx.doi.org/10.1063/1.94599 (3 pages) | Cited 54 times

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The Schottky‐barrier height ϕB of ideal (no interfacial oxide) contacts to GaAs has been measured for a diverse group of eleven metals, Cu, Pd, Ag, Au, Al, Ti, Pb, Bi, Ni, Cr, and Fe, by using current‐voltage and capacitance‐voltage techniques. The contacts were formed by metal evaporation in ultrahigh vacuum onto clean (100) surfaces of both n‐type and p‐type GaAs. For n‐type contacts ϕB ranged from 0.96 to 0.72 eV, in the metal order listed above; for p‐type contacts ϕB ranged from 0.45 to 0.62 eV. No simple correlation was found between ϕB and metal work function nor between ϕB and the chemical reactivity at the metal‐GaAs interface.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.40.Ei Rectification
85.30.Hi Surface barrier, boundary, and point contact devices
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