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15 Jan 1984

Volume 44, Issue 2, pp. 153-269

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Air‐bridge microbolometer for far‐infrared detection

Dean P. Neikirk and David B. Rutledge

Appl. Phys. Lett. 44, 153 (1984); http://dx.doi.org/10.1063/1.94718 (3 pages) | Cited 10 times

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A new microbolometer for far‐infrared detection has been fabricated that allows an increase in sensitivity of a factor of 4 over the best previously reported bolometer. By suspending the detector in the air above its substrate a reduction in the thermal conductance out of the device by a factor of 5 has been achieved. At a modulation frequency of 100 kHz this microbolometer has an electrical noise equivalent power of 2.8×10−11 W(Hz)−1/2. A thermal model is also presented that accurately fits the response of the detector.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
44.10.+i Heat conduction
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Transversely excited N2O sequence band laser

Hiroshi Hara and W. T. Whitney

Appl. Phys. Lett. 44, 155 (1984); http://dx.doi.org/10.1063/1.94695 (2 pages)

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Sequence band operation of a transversely excited nitrous oxide laser is reported for the first time. The sequence laser could be tuned to each V‐R line from R(25) to R(14) and from P(14) to P(26) in the 10.7‐μm band. Output energies were 10 μJ–1 mJ. Improved stability of the discharge at high specific energy loading and use of an intracavity hot cell made sequence band oscillation possible.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Longitudinal‐mode control in integrated semiconductor laser phased arrays by phase velocity matching

E. Kapon, J. Katz, S. Margalit, and A. Yariv

Appl. Phys. Lett. 44, 157 (1984); http://dx.doi.org/10.1063/1.94719 (3 pages) | Cited 10 times

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The spectrum of semiconductor laser arrays with separate contacts is investigated. It is demonstrated that the individual laser currents can be selected such that the array operates in a single longitudinal mode in contrast to the multimode nature of its individual constituents. Moreover, it is possible to tune the lasing frequency by varying the laser currents. Wavelength tuning range of ∼50 Å, with tuning rate of ∼5 Å/mA, is demonstrated. It is suggested that these spectral features, characteristic of lasers which are coupled in parallel, result from the strong frequency dependence of their spatial mode pattern near the phase‐matching frequency of their coupled waveguides.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Influence of orientation dependent growth kinetics on the performance of InGaAsP buried crescent lasers

H. Temkin, R. A. Logan, and J. P. Van der Ziel

Appl. Phys. Lett. 44, 160 (1984); http://dx.doi.org/10.1063/1.94720 (3 pages) | Cited 3 times

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The growth reproducibility of the separate optical confinement buried crescent laser has been studied in the wavelength region of 1.3<λ≤1.62 μm. The performance and yield of λ=1.55 μm lasers were found to be impaired by the competition between the (100) and (111) growth habits leading to the perturbed growth of the active layer. These results are discussed in terms of the crystallographic direction dependence of the liquid‐solid distribution coefficient.
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42.60.By Design of specific laser systems
68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes

4.4‐μm cascade 13C 16O2 laser

R. P. Johnson, D. Cornelison, and C. J. Buzcek

Appl. Phys. Lett. 44, 162 (1984); http://dx.doi.org/10.1063/1.94721 (3 pages) | Cited 3 times

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An in‐cavity hot 13C 16O2 cell is used to obtain a 4.4‐μm lasing from a cascade process in a sealed off 13C 16O2 laser. The 4.4‐μm laser is tunable and operates on the P branch (near 4.44 μm) and the R branch (near 4.39 μm) of the ([10°1]I–[10°0]I) band of 13C 16O2. The laser is mechanically Q switched producing peak powers in excess of 10 W with repetition rates greater than 500 Hz.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Nonlinear prism coupler

C. Liao and G. I. Stegeman

Appl. Phys. Lett. 44, 164 (1984); http://dx.doi.org/10.1063/1.94722 (3 pages) | Cited 20 times

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The problem of coupling an external radiation field into a thin‐film waveguide characterized by a power‐dependent refractive index has been investigated theoretically. The optimum coupling efficiency is found to decrease with increasing power.
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42.82.-m Integrated optics
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Cross‐talk problems in optical directional couplers

Kuo‐Liang Chen and Shyh Wang

Appl. Phys. Lett. 44, 166 (1984); http://dx.doi.org/10.1063/1.94723 (3 pages) | Cited 22 times

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Cross‐talk in optical directional couplers is usually considered to be limited only by the processing technology. We show that unequal coupling of an input wave to the even and the odd mode of the coupling region gives rise to another kind of cross‐talk. The extinction ratio is well approximated by the overlap integral of the fields in the two waveguides. For a given coupling length, the higher the index step a waveguide has, the less the cross‐talk is. For straight couplers without bends one way to eliminate the cross‐talk is to offset the input wave relative to the coupled guides with the penalty of power loss. A three‐waveguide coupler has a different cross‐talk problem of comparable magnitude.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
84.40.Ba Antennas: theory, components and accessories

Stabilization and optimum biasing of dynamic‐single‐mode coupled‐cavity lasers

L. A. Coldren, K. J. Ebeling, R. G. Swartz, and C. A. Burrus

Appl. Phys. Lett. 44, 169 (1984); http://dx.doi.org/10.1063/1.94696 (3 pages) | Cited 4 times

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Stabilization and control of coupled‐cavity lasers are considered. Constant output power plots on the I1 vs I2 plane determine optimum dc bias points and how the rf modulation should be applied. A double feedback‐loop control circuit provides stable, single‐mode operation over wide ranges of temperature and power under modulation. Experiments demonstrate ≥24 dB of spurious mode suppression under almost complete on/off high‐speed modulation over >15 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Use of a single nonlinear Fabry–Perot étalon as optical logic gates

J. L. Jewell, M. C. Rushford, and H. M. Gibbs

Appl. Phys. Lett. 44, 172 (1984); http://dx.doi.org/10.1063/1.94697 (3 pages) | Cited 26 times

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The all‐optical operation of many logic elements (nor, etc.) on a single passive nonlinear Fabry–Perot etalon is discussed. An experiment using dye‐filled etalons verifies the prediction and agrees with a computer simulation. This kind of Fabry–Perot gate should be capable of very high speed operation with minimum energy per cycle.
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42.30.Va Image forming and processing
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Hp Optical processors, correlators, and modulators
89.20.Ff Computer science and technology

Statistical properties of a laser driven by colored noise

Katja Lindenberg, Bruce J. West, and Emilio Cortes

Appl. Phys. Lett. 44, 175 (1984); http://dx.doi.org/10.1063/1.94698 (3 pages) | Cited 16 times

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We obtain an exact analytic solution of the equation of motion for a dye laser with a fluctuating pump parameter of finite correlation time. The exact solution is compared with recent experimental results on the intensity fluctuations of a dye laser. We also obtain a favorable comparison of the experiments to the results obtained from an approximate Fokker–Planck description of the laser.
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42.55.Mv Dye lasers
42.50.-p Quantum optics

Resonance ionization spectroscopy measurement of vapor pressure of rubidium iodide

Gene A. Capelle, Donald A. Jessup, Henry M. Borella, and Larry A. Franks

Appl. Phys. Lett. 44, 177 (1984); http://dx.doi.org/10.1063/1.94699 (3 pages) | Cited 2 times

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Resonance ionization spectroscopy has been used to measure vapor pressure data for a solid (RbI) to very low pressures. A pulsed UV laser was used to dissociate RbI molecules in the vapor phase established over a sample at known temperature. The rubidium atoms were then ionized by a two‐step process using a dye laser tuned to either of two allowed transitions in the ground‐state atomic Rb system. These measurements have extended the RbI vapor pressure versus temperature curve approximatelly 10 orders of magnitude below previously reported experimental data. Although this experiment is limited to RbI, the technique is applicable to a wide variety of solids, both atomic and molecular.
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68.35.Md Surface thermodynamics, surface energies
32.80.Fb Photoionization of atoms and ions

Picosecond time response of a transverse electric atmospheric CO2 laser amplifier

P. Mukherjee and H. S. Kwok

Appl. Phys. Lett. 44, 180 (1984); http://dx.doi.org/10.1063/1.94700 (2 pages) | Cited 1 time

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The gain of an atmospheric pressure CO2 laser amplifier was measured as a function of the input pulse duration for the first time using optical free‐induction decay pulses. It was found that the gain decreases rapidly for pulses shorter than 150 ps, in agreement with the gain bandwidth predictions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Surface and interface acoustic waves in SiO2/YX‐LiNbO3

D. Cullen, G. Meltz, and T. Grudkowski

Appl. Phys. Lett. 44, 182 (1984); http://dx.doi.org/10.1063/1.94701 (3 pages) | Cited 2 times

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For Y‐cut lithium niobate, a leaky shear horizontal (SH) surface wave is known to propagate along the X axis. When an SiO2 film is deposited on the LiNbO3 surface, the SH wave is found experimentally to have low loss and theoretical calculations show the wave to be closely confined to the surface. Two additional acoustic modes are observed in the SiO2/YX‐LiNbO3 configuration. One mode is a Rayleigh‐type surface wave and the other a generalized Stoneley wave. Experimental measurements and theoretical predictions of the wave velocities versus film thickness to wavelength ratio (h/λ) are presented. Measurements of the temperature coefficient of time delay are given for the SH wave showing a zero first order coefficient at h=0.42λ. The sensitivity of this wave to bending strains is also presented.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
62.65.+k Acoustical properties of solids
43.35.Pt Surface waves in solids and liquids

Low‐energy high flux reactive ion etching by rf magnetron plasma

Lin I, D. C. Hinson, W. H. Class, and R. L. Sandstrom

Appl. Phys. Lett. 44, 185 (1984); http://dx.doi.org/10.1063/1.94702 (3 pages) | Cited 16 times

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The magnetron plasma etching of SiO2 and Si in fluorocarbon gas has been investigated. The plasma has high ionization degree, collisionless high density, and low energy ion flux (I∼1.0 mA/cm2, 30≲Ei ≲250 eV at 1 W/cm2) and a controllable etch uniformity. The bulk of the plasma supports an electric field which can be shaped to achieve normal ion bombardment of the etching surface. Good etching anisotropy, high SiO2/Si selectivity, and rates six times greater than conventional reactive ion etching were demonstrated.
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81.65.-b Surface treatments
85.40.Bh Computer-aided design of microcircuits; layout and modeling
52.40.Hf Plasma-material interactions; boundary layer effects
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Early oxidation stage of copper during cw CO2 laser irradiation

I. Ursu, L. C. Nistor, V. S. Teodorescu, I. N. Mihăilescu, L. Nanu, A. M. Prokhorov, N. I. Chapliev, and V. I. Konov

Appl. Phys. Lett. 44, 188 (1984); http://dx.doi.org/10.1063/1.94703 (2 pages) | Cited 18 times

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The early oxidation stage of copper under the action of cw CO2 laser radiation was investigated by transmission electron microscopy, selected area diffraction, and scanning electron microscopy, in correlation with target absorptivity determinations of l0.6‐μm laser light by calorimetry. The results are discussed in connection with available theoretical interpretations.
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81.05.Bx Metals, semimetals, and alloys
79.20.Ds Laser-beam impact phenomena

Growth of single crystal SrF2(001)/GaAs(001) structures by molecular beam epitaxy

P. W. Sullivan

Appl. Phys. Lett. 44, 190 (1984); http://dx.doi.org/10.1063/1.94704 (3 pages) | Cited 24 times

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Epitaxial SrF2 layers were grown onto GaAs (001) at T>250 °C by molecular beam epitaxy. The dominant growth mechanism appears to be by three‐dimensional island growth although significant ordering of the surface occurs on annealing the layers at T>400 °C. Growth of epitaxial GaAs (001) at 540 °C by molecular beam epitaxy onto the SrF2 films has also been demonstrated. The results suggest that stacked, single crystal, alternating layers of GaAs (001) and SrF2 (001) should be amenable to growth by molecular beam epitaxy.
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68.55.-a Thin film structure and morphology

Thin‐film adhesion changes induced by electron irradiation

I. V. Mitchell, J. S. Williams, P. Smith, and R. G. Elliman

Appl. Phys. Lett. 44, 193 (1984); http://dx.doi.org/10.1063/1.94705 (3 pages) | Cited 29 times

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The adhesion of thin films of gold, sputter deposited onto silicon, is shown to be improved by subsequent irradiation with 5–30‐keV electrons. The similarities between electron and heavy ion irradiation effects suggest a common (electronic) origin for the change in interfacial bonding.
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61.80.Fe Electron and positron radiation effects
61.80.Jh Ion radiation effects
68.60.-p Physical properties of thin films, nonelectronic
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Ion implantation induced displacement of Ga and As in GaAs

R. S. Bhattacharya

Appl. Phys. Lett. 44, 195 (1984); http://dx.doi.org/10.1063/1.94706 (3 pages) | Cited 7 times

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Proton induced x‐ray emission has been used, in combination with channeling, to study the displacements of Ga and As atoms in GaAs (100) crystal after ion implantation. O+, S+, and Ar+ ions of various doses were used for implantation. Results indicate a slightly higher displacement of Ga (≲4%) than As atoms for the implantation conditions employed here.
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61.72.U- Doping and impurity implantation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
66.30.J- Diffusion of impurities

Grain growth in Al alloy conductors as a result of rapid annealing

Janet M. Towner, Evert P. van de Ven, and Craig G. Hopkins

Appl. Phys. Lett. 44, 198 (1984); http://dx.doi.org/10.1063/1.94707 (2 pages) | Cited 2 times

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Aluminum and aluminum alloy thin films were rapidly annealed using high intensity visible light. Under suitable conditions, substantial grain growth was achieved in the Al‐Cu and Al‐Si‐Cu conductors and this grain growth had a beneficial effect on electromigration. Unfortunately, this growth did not occur uniformily across the wafer. A second phenomenon, which resulted from thermal cycling, was the solid phase reduction of SiO2 by the overlying Al film.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Role of carbon in hydrogenated amorphous silicon solar cell degradation

R. S. Crandall, D. E. Carlson, A. Catalano, and H. A. Weakliem

Appl. Phys. Lett. 44, 200 (1984); http://dx.doi.org/10.1063/1.94708 (2 pages) | Cited 20 times

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Experiments using a combination of capacitance and photovoltaic transient spectroscopy on hydrogenated amorphous silicon solar cells demonstrate that carbon produces a metastable defect with characteristic energy and emission time. This defect is involved in solar cell degradation.
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84.60.Jt Photoelectric conversion
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys

Trap generation and electron detrapping in SiO2 during high‐field stressing of metal‐oxide‐semiconductor structures

M. M. Heyns, R. F. DeKeersmaecker, and M. W. Hillen

Appl. Phys. Lett. 44, 202 (1984); http://dx.doi.org/10.1063/1.94709 (3 pages) | Cited 31 times

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Direct evidence for electron trap generation during high‐field stressing of thermally grown SiO2 layers is obtained using avalanche injection followed by internal photoemission measurements on Al‐gate metal‐oxide‐semiconductor structures. Avalanche injection is used to fill oxide traps with a minimum risk of oxide degradation. It is shown that traps are created near the Si‐SiO2 interface of a 39‐nm‐thick oxide on p‐Si stressed in accumulation. After intentional charging the centroid of the additional charge distribution corresponding to the newly created traps is located at 5(±2.5) nm from the Si‐SiO2 interface. Any bulk oxide charge is detrapped during a high‐field stress. The importance of these findings in relation to breakdown in SiO2 is indicated.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.22.Jp Dielectric breakdown and space-charge effects

New amorphous silicon nonlinear element for liquid crystal display addressing

N. Szydlo, E. Chartier, N. Proust, and J. Magariño

Appl. Phys. Lett. 44, 205 (1984); http://dx.doi.org/10.1063/1.94710 (2 pages) | Cited 1 time

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A nonlinear element consisting of two back‐to‐back platinum/a‐Si Schottky diodes made on amorphous silicon prepared by chemical vapor deposition of silane and post‐hydrogenation is described. Nonlinearity coefficients α of the I‐V characteristics (I=KVα) in the range 7–15 are obtained depending on doping and thickness of the active layer. The high multiplexing capacity (>1000 rows) at the television frame frequency is demonstrated, for the first time, by simulation on a single twisted‐nematic cell in series with the device.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Sx Metal-semiconductor-metal structures

Picosecond photoresponse in 3He+ bombarded InP photoconductors

P. M. Downey and B. Schwartz

Appl. Phys. Lett. 44, 207 (1984); http://dx.doi.org/10.1063/1.94711 (3 pages) | Cited 21 times

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3He+ bombardment is shown to be an effective means of achieving free‐carrier lifetimes as short as 1 ps in Fe‐doped InP without compromising the dark resistance of the photoconductor. Autocorrelation measurements demonstrate that these bombarded photoconductors operate as sampling gates with 2‐ps sampling apertures and millivolt sensitivity. They exhibit a 10–90% decay time of 30 ps when used as pulse generators; we attribute this behavior to imperfect contacts.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
72.40.+w Photoconduction and photovoltaic effects

Deep level transient spectroscopy of defects introduced by resistive evaporation of metals on silicon

F. D. Auret, R. Kleinhenz, and C. P. Schneider

Appl. Phys. Lett. 44, 209 (1984); http://dx.doi.org/10.1063/1.94712 (3 pages) | Cited 5 times

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Schottky barrier diodes were formed on n‐ and p‐type silicon by resistive evaporation of Ti and Au. The defects introduced in the substrate near the metal‐silicon interface were characterized by deep level transient spectroscopy. For n‐type devices defects were observed at 0.11, 0.14, and 0.17 eV below the conduction band, while for p‐type devices one defect at 0.33 eV above the valence band was measured. All these defects could be removed by annealing the devices at 175 °C for 10 min.
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78.40.Fy Semiconductors
73.40.Sx Metal-semiconductor-metal structures
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Study of electric field enhanced emission of deep levels using a new emission spectroscopic technique

T. T. Nguyen, K. L. Wang, and G. P. Li

Appl. Phys. Lett. 44, 211 (1984); http://dx.doi.org/10.1063/1.94713 (3 pages) | Cited 6 times

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A small capture pulse followed by an emission pulse was used to study the carrier emission of defect centers in the presence of electric field. The capture pulse is used to fill a localized group of centers with electrons in n‐type semiconductors and a reverse pulse causes these centers to emit electrons at an electric field determined by the reverse‐bias pulse. The enhancement of the emission due to the presence of a high electric field can be determined readily from the change of capacitance transients detected using a conventional deep level transient spectroscopy setup. In this technique, a low dc bias is used during the measurement of the capacitance transients and thus results in a high sensitivity of detection. Calculation and experimental results are given for the Ec −0.35 eV center in GaAs.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.40.Fy Semiconductors
79.90.+b Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)
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