APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Feb 1984

Volume 44, Issue 3, pp. 273-354

Page 1 of 2 Pages Next Page | Jump to Page

Direct modulation of semiconductor lasers at f>10 GHz by low‐temperature operation

K. Y. Lau, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 44, 273 (1984); http://dx.doi.org/10.1063/1.94744 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Using a 175‐μm‐long buried‐heterostructure laser fabricated on a semi‐insulating substrate operating at −50 °C, a direct amplitude modulation bandwidth in excess of 10 GHz has been achieved.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes

Distributed Bragg reflector lattice‐matched Pb1−xSnxTe/PbSeyTe1−y diode lasers

Eli Kapon, A. Zussman, and A. Katzir

Appl. Phys. Lett. 44, 275 (1984); http://dx.doi.org/10.1063/1.94745 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Distributed Bragg reflector (DBR) lattice‐matched Pb1−xSnxTe/PbSeyTe1−y diode lasers were fabricated using liquid phase epitaxy. These DBR lasers were operated within a limited range of heat‐sink temperatures 8.5–38 K, and the threshold current density at 20 K was ∼3 kA/cm2. Single longitudinal‐mode operation was obtained up to more than three times the threshold current. The DBR lasers exhibited continuous tuning over a relatively wide range of ∼6 cm−1 near 775 cm−1 (12.9 μm). The average tuning rate was 0.21 cm−1/K, and it was much smaller than the rate for corresponding Fabry–Perot lasers, which was 2.3 cm−1/K.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Low‐loss GaInAsP buried‐heterostructure optical waveguide branches and bends

L. M. Johnson, Z. L. Liau, and S. H. Groves

Appl. Phys. Lett. 44, 278 (1984); http://dx.doi.org/10.1063/1.94746 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Low‐loss GaInAsP buried‐heterostructure waveguide branches and bends have been demonstrated using a novel etch and liquid phase epitaxial regrowth technique. Branching losses as low as 0.4 dB at 1.3‐μm wavelength for a 1° branch have been achieved. The measured waveguide propagation loss is ≤1.5 cm−1.
Show PACS
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Millimeter wave emission from a rotating electron ring in a rippled magnetic field

G. Bekefi, R. E. Shefer, and W. W. Destler

Appl. Phys. Lett. 44, 280 (1984); http://dx.doi.org/10.1063/1.94747 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
We report measurements of millimeter wave emission from a rotating relativistic electron ring (2 MV, 1 kA) in which electrons move in quasi‐circular orbits under the combined action of a uniform axial magnetic field and an azimuthally periodic wiggler magnetic field. We observe radiation at frequencies above 91 GHz, at power levels in excess of 200 kW.
Show PACS
41.60.-m Radiation by moving charges
42.55.Ah General laser theory
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

Linewidth measurements of a (GaAl)As diode laser with a high reflectivity coating

W. Lenth

Appl. Phys. Lett. 44, 283 (1984); http://dx.doi.org/10.1063/1.94748 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The effect of the facet reflectivity on the linewidth of a single‐frequency (GaAl)As diode laser has been studied by measuring the linewidth as a function of the laser output power before and after a high reflectivity coating was applied to one facet of the laser. The observed linewidth reduction arising from the increase in the cavity Q agrees with predictions of linewidth theories. The results indicate that the application of high reflectivity coatings can be a practical method for achieving a substantial reduction of the linewidth of (GaAl)As diode lasers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond time‐resolved reflectivity and transmission at 1.9 and 2.8 μm of laser‐generated plasmas in silicon and germanium

H. M. van Driel, L.‐A. Lompré, and N. Bloembergen

Appl. Phys. Lett. 44, 285 (1984); http://dx.doi.org/10.1063/1.94749 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
We have observed plasmon resonances with 1.9‐μm and 2.8‐μm probe pulses in silicon and germanium, excited by 25‐ps pulses up to 40 mJ/cm2 at 0.53 and 1.06 μm, respectively. Firm values of N/m∗ are derived.
Show PACS
72.30.+q High-frequency effects; plasma effects
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm

W. T. Tsang

Appl. Phys. Lett. 44, 288 (1984); http://dx.doi.org/10.1063/1.94727 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
Current injection Ga0.47In0.53As/InP multiquantum well heterostructure lasers operating at 1.53 μm have been successfully prepared by molecular beam epitaxy. These lasers consist of four ∼70 Å Ga0.47In0.53As wells and three ∼150 Å InP barriers. The threshold current density is 2.7 kA/cm2. In the temperature range of 10–75 °C, the threshold‐temperature dependence can be described closely by a single temperature dependence coefficient T0. The measured T0 is 45 K. No significant improvement in T0 is observed in these multiquantum well lasers over conventional double‐heterostructure lasers operating also at 1.5 μm.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement

D. P. Wilt, B. Schwartz, B. Tell, E. D. Beebe, and R. J. Nelson

Appl. Phys. Lett. 44, 290 (1984); http://dx.doi.org/10.1063/1.94728 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
A channeled substrate buried heterostructure InGaAsP/InP laser is demonstrated using a hybrid technique of Fe ion implantation followed by liquid phase epitaxy. A high resistivity region is formed by the implantation and subsequent anneal of Fe into an n‐type InP substrate, and this is used to provide a self‐aligned current confinement barrier layer. The use of an in situ anneal prior to liquid phase epitaxy minimizes the number of processing steps. Pulsed threshold currents as low as 22 mA have been achieved on devices utilizing broad area metal contacts.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
42.60.By Design of specific laser systems
61.72.U- Doping and impurity implantation

Coupled‐mode analysis of phase‐locked injection laser arrays

J. K. Butler, D. E. Ackley, and D. Botez

Appl. Phys. Lett. 44, 293 (1984); http://dx.doi.org/10.1063/1.94729 (3 pages) | Cited 126 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
A coupled‐mode analysis has been developed to describe the output of phase‐locked injection laser arrays. We show that an array of emitters with weak coupling can only operate in a set of discrete modes determined by the number and the spacing of the emitters. The interaction between emitters leads to a splitting of the common frequency of operation that can be estimated from the coupling strength. The coupled‐mode analysis is compared to calculations based on simple diffraction theory. A consequence of the analysis is an explanation for the commonly observed discrepancy between experimentally observed far‐field lobe(s) widths and those predicted by simple diffraction theory.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Microstructure‐independent acoustoelastic measurement of stress

R. B. Thompson, J. F. Smith, and S. S. Lee

Appl. Phys. Lett. 44, 296 (1984); http://dx.doi.org/10.1063/1.94730 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Measurements are reported of the velocities of horizontally polarized shear waves (fundamental mode) propagating in the plane of aluminum plates under tensile loads applied parallel to the rolling direction. In agreement with the predictions of previous theories, the applied stress is found to be predicted by the expression 2C(ΔV/V), where C is the appropriate second‐order shear elastic constant and ΔV/V is the fractional difference in velocities of waves propagating parallel and perpendicular to the load. The data show that, whereas the individual velocities are strongly influenced by microstructure, the stress prediction based on their difference is not. Included are results illustrating the effects of preferred grain orientation and plastic deformation.
Show PACS
46.80.+j Measurement methods and techniques in continuum mechanics of solids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
81.40.Lm Deformation, plasticity, and creep

Negative ion densities in NF3 discharges

K. E. Greenberg, G. A. Hebner, and J. T. Verdeyen

Appl. Phys. Lett. 44, 299 (1984); http://dx.doi.org/10.1063/1.94731 (2 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
This letter shows that the negative ion density in the NF3 discharge is one to two orders of magnitude larger than the electron density. A XeCl laser was used to photodetach the ions and the resultant excess electron population was measured using microwave interferometry.
Show PACS
52.25.Kn Thermodynamics of plasmas
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
33.80.Eh Autoionization, photoionization, and photodetachment
52.80.Dy Low-field and Townsend discharges

Recrystallization of amorphous gallium arsenide by ion beams

D. K. Sadana, H. Choksi, J. Washburn, P. F. Byrne, and N. W. Cheung

Appl. Phys. Lett. 44, 301 (1984); http://dx.doi.org/10.1063/1.94732 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
An 11‐MV arsenic beam was used to amorphize approximately 3.9 μm of GaAs surface layer at liquid nitrogen temperature. It was found that apparently amorphous gallium arsenide can be reconverted to single crystal by subsequent implantation at higher temperature. The recrystallization by the ion beam proceeded simultaneously from the amorphous surface and the deep amorphous/crystalline interface. Growth of dendrites and/or microtwins occurred at the recrystallizing interfaces. From the comparison of the nuclear stopping curve with the damage distribution in cross‐sectional transmission electron micrograph, the threshold value for converting crystalline GaAs into amorphous GaAs was measured to be between 2–5×1020 keV cm−3.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Enhanced activation of Zn‐implanted GaAs

D. Eirug Davies and P. J. McNally

Appl. Phys. Lett. 44, 304 (1984); http://dx.doi.org/10.1063/1.94733 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Limitations on high level doping have been investigated for implanted Zn in GaAs. Fast diffusive redistribution during the annealing of heavy dose Zn implants generally leads to broader doped layers of lesser concentrations. Though such a redistribution can be prevented by short duration annealing of ∼1 s, this alone is not sufficient to increase the peak concentration. Significantly better activation can be obtained if an excess of As is also provided. It is found that coimplanting As with Zn in addition to short duration annealing provides layers with peak doping concentrations increased to levels approaching 1020 cm−3. Doping enhancement related to encapsulation and the outdiffusion of Ga into SiO2 has also been observed.
Show PACS
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Subbands and charge control in a two‐dimensional electron gas field‐effect transistor

B. Vinter

Appl. Phys. Lett. 44, 307 (1984); http://dx.doi.org/10.1063/1.94734 (3 pages) | Cited 45 times

Full Text: | Download PDF

Show Abstract
A calculation of the subband structure and charge distribution in an AlxGa1−xAs/GaAs heterojunction as a function of gate voltage at room temperature has been performed. The results show that usually about 80% of the electrons in the channel are in the lowest two subbands and describe for the first time quantitatively the transition from the simple capacitive charge control regime to the regime where the channel density is no longer controlled by the gate voltage.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Interaction in Cu/Al and Pt/Cu/Al thin films: Competing oxygen effects and preferential reaction between Pt and CuAl alloy

Chin‐An Chang

Appl. Phys. Lett. 44, 310 (1984); http://dx.doi.org/10.1063/1.94735 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
The effects of oxygen on the interactions of the Cu‐Al thin‐film system are studied using both Cu/Al and Pt/Cu/Al structures. For the Cu/Al structure, oxygen‐enhanced outdiffusion of Al and accumulation of Al on the Cu surface are observed. Using the Pt/Cu/Al structure, however, no surface accumulation of Al on Pt is observed; instead, the observed interdiffusion and alloy formation between Cu and Al are both suppressed by oxygen. At increasing temperatures, Al preferentially outdiffuses from the CuAl alloy to form a Pt Al alloy with the top Pt layer. This last process is also suppressed by oxygen, similar to the binary Pt/Al system reported previously. The mechanisms for the competing interactions and ambient effects observed are discussed.
Show PACS
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Bx Metals, semimetals, and alloys

Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

R. N. Bicknell, R. W. Yanka, N. C. Giles, J. F. Schetzina, T. J. Magee, C. Leung, and H. Kawayoshi

Appl. Phys. Lett. 44, 313 (1984); http://dx.doi.org/10.1063/1.94736 (3 pages) | Cited 49 times

Full Text: | Download PDF

Show Abstract
Growth of epitaxial (100) CdTe films on (100) GaAs substrates by molecular beam epitaxy is discussed. X‐ray diffraction, UV reflectance, photoluminescence, and transmission electron microscopy techniques were employed to characterize the film specimens. The high structural perfection of the layers was evidenced by line dislocation densities of ≤104/cm2 at the free surface of films ≂6.6 μm thick and by measurable excitonic photoluminescence (∼1.504 eV) at room temperature. The CdTe epilayers were smooth and mirrorlike in appearance.
Show PACS
68.55.-a Thin film structure and morphology

Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon

Shuo‐Tung Chang, N. M. Johnson, and S. A. Lyon

Appl. Phys. Lett. 44, 316 (1984); http://dx.doi.org/10.1063/1.94737 (3 pages) | Cited 46 times

Full Text: | Download PDF

Show Abstract
Electron injection into ultrathin nitrided oxides on silicon reveals both high densities of electronic defects, which readily capture electrons, and efficient tunnel emission of trapped charge. High‐temperature nitridation of thermally grown oxides was verified with Auger depth profiling. In 11–17‐nm‐thick nitrided oxides, the electron trap density is ≥1×1019 cm−3 as determined from saturated charge accumulation, the majority of the traps are energetically situated more than 2 eV below the conduction band as determined by post‐injection anneals up to 300 °C, and the capture cross section is of the order of 10−14 cm2 as estimated from the trapping kinetics. Complete extraction of trapped charge is achieved in the thinnest films (e.g., ≤11 nm thick), and the tunnel emission mechanism is evidenced by the independence of the discharge time on temperature. Implications of the above findings for applications of ultrathin nitrided oxides in very large scale integration and for their low sensitivity to ionizing radiation are discussed.
Show PACS
73.61.Ng Insulators
71.55.-i Impurity and defect levels
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Identification of the residual acceptors in undoped high purity InP

B. J. Skromme, G. E. Stillman, J. D. Oberstar, and S. S. Chan

Appl. Phys. Lett. 44, 319 (1984); http://dx.doi.org/10.1063/1.94738 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low‐temperature (1.7–20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109–5×1011 cm−2) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH3‐vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.
Show PACS
78.40.Fy Semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation

Hot electrons in modulation‐doped GaAs‐AlGaAs heterostructures

Jagdeep Shah, A. Pinczuk, H. L. Störmer, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 44, 322 (1984); http://dx.doi.org/10.1063/1.94739 (3 pages) | Cited 54 times

Full Text: | Download PDF

Show Abstract
We have investigated electric field heating of high mobility electrons in modulation‐doped GaAs‐AlGaAs heterostructures by simultaneous measurement of luminescence and mobility. We find that hot electrons have a Fermi‐Dirac distribution function for fields up to 750 V/cm and that the high field mobility of electrons can be understood in terms of field‐induced electron heating and the temperature dependence of low field mobility.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects
78.60.-b Other luminescence and radiative recombination

Effects of UV irradiation on the inverted surface layer in semiconductor‐insulator‐semiconductor devices

Amal K. Ghosh, Joel I. Haberman, and Tom Feng

Appl. Phys. Lett. 44, 324 (1984); http://dx.doi.org/10.1063/1.94740 (2 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Irradiating semiconductor‐insulator‐semiconductor devices with 3650 Å light increases the J0 associated with the minority‐carrier injection/diffusion current, resulting in a concomitant decrease in Voc. This increase in J0 is attributed to a decrease in carrier lifetime in the inverted surface layer as a result of UV irradiation.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
73.40.Ty Semiconductor-insulator-semiconductor structures

Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy

T. Sanada, S. Yamakoshi, O. Wada, T. Fujii, T. Sakurai, and M. Sasaki

Appl. Phys. Lett. 44, 325 (1984); http://dx.doi.org/10.1063/1.94741 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
AlGaAs/GaAs multiquantum well lasers and GaAs metal‐semiconductor field‐effect transistors have been monolithically integrated on a semi‐insulating GaAs substrate by using molecular beam epitaxy. This integrated laser has exhibited cw operation with the low threshold current of 20 mA at room temperature. The laser/field‐effect transistor (FET) characteristics, such as a linear control of laser output power by changing the FET gate voltage, have been confirmed. A conversion ratio of laser output power to FET gate voltage has been measured to be as high as 3.3 mW/V. Rise and fall times of 1 ns have been demonstrated.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.55.Px Semiconductor lasers; laser diodes
85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Thermal diffusion of Pt in silicon from PtSi

S. Mantovani, F. Nava, C. Nobili, M. Conti, and G. Pignatel

Appl. Phys. Lett. 44, 328 (1984); http://dx.doi.org/10.1063/1.94742 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Platinum diffusion in n‐type silicon has been measured using various kinds of spectroscopic techniques for deep energy levels. Platinum acts as an acceptor which captures electrons. An energy level of 0.23±0.02 eV was found for the trap. The diffusion profile can be explained, as in the case of gold, with a kick‐out mechanism involving silicon self‐interstitials. From the model, an activation energy of 5.01 eV for silicon self‐interstitial diffusion can be inferred.
Show PACS
66.30.J- Diffusion of impurities
78.40.Fy Semiconductors

Persistent photoluminescence quenching of 0.68‐eV emission in undoped semi‐insulating GaAs

Phil Won Yu

Appl. Phys. Lett. 44, 330 (1984); http://dx.doi.org/10.1063/1.94743 (3 pages) | Cited 32 times

Full Text: | Download PDF

Show Abstract
The persistent photoluminescence quenching effect is shown to occur on the broad 0.68‐eV emission commonly present in undoped semi‐insulating GaAs bulk materials. The dependence of this persistent emission on below band‐gap energy excitation has been measured. The data indicate involvement of the main deep donor EL2 in the radiative mechanism of the 0.68‐eV emission. The persistent photoluminescence quenching effect can be explained by the presence of both normal and metastable states of EL2.
Show PACS
78.40.Fy Semiconductors
63.20.K- Phonon interactions

Illumination stimulated persistent channel depletion at selectively doped Al0.3Ga0.7As/GaAs interface

A. Kastalsky and J. C. M. Hwang

Appl. Phys. Lett. 44, 333 (1984); http://dx.doi.org/10.1063/1.94750 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
The results of the combined influence of illumination and negative substrate bias on the conductance at Al0.3Ga0.7As/GaAs interface are reported. The observed strong (two to three orders of magnitude) persistent increase in sample resistance is explained with a model of two conducting layers in the heterostructure: (1) an interface channel and (2) a low mobility AlGaAs layer. The simultaneous application of light and substrate bias leads to the generation of electrons and holes, their separation, and their subsequent capture by traps. A counterfield remaining in the sample after the removal of both influences causes a strong persistent channel depetion and an increase of the resistance.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Identification of oxygen‐related midgap level in GaAs

J. Lagowski, D. G. Lin, T. Aoyama, and H. C. Gatos

Appl. Phys. Lett. 44, 336 (1984); http://dx.doi.org/10.1063/1.94751 (3 pages) | Cited 77 times

Full Text: | Download PDF

Show Abstract
An oxygen‐related deep level ELO was identified in GaAs employing Bridgman‐grown crystals with controlled oxygen doping. The activation energy (825±5 meV) of ELO is almost the same as that of the dominant midgap level: EL2 (815±2 meV). This fact impedes the identification of ELO by standard deep level transient spectroscopy. However, we found that the electron capture cross section of ELO is about four times greater than that of EL2. This characteristic served as the basis for the separation and quantitative investigation of ELO employing detailed capacitance transient measurements in conjunction with reference measurements on crystals grown without oxygen doping and containing only EL2.
Show PACS
78.40.Fy Semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close