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1 Feb 1984

Volume 44, Issue 3, pp. 273-354

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Pulsed laser evaporation of Cd3As2

J. J. Dubowski and D. F. Williams

Appl. Phys. Lett. 44, 339 (1984); http://dx.doi.org/10.1063/1.94752 (3 pages) | Cited 4 times

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A pulsed Nd:yttrium aluminum garnet (YAG) laser, power density 4–10×107 W/cm2, was used to prepare thin films of Cd3As2 by evaporation onto room‐temperature substrates. The net deposition rate was 105 Å/s. The film microstructure was composed of amorphous agglomerates, 600–2000 Å in size. The films obtained with power density 7–10×107 W/cm2 were stoichiometric and they had electron concentrations of 2.6–10×1018 cm−3 and electron mobilities of 210–520 cm2/Vs at 300 K.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Direct energy gap of Al1−xInxAs lattice matched to InP

B. Wakefield, M. A. G. Halliwell, T. Kerr, D. A. Andrews, G. J. Davies, and D. R. Wood

Appl. Phys. Lett. 44, 341 (1984); http://dx.doi.org/10.1063/1.94726 (3 pages) | Cited 41 times

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The direct energy gap of thin, undoped epitaxial layers of Al1−xInxAs grown on (100) InP has been measured as a function of In content for values of x between 0.46 and 0.55 using catholuminescence spectroscopy. For the composition lattice matched to InP it was measured to be 1.450 eV at room temperature, and 1.508 eV at 4 K. Over the limited range of compositions studied, it varied as Eg =1.450+2.29 Δx eV at room temperature, and as Eg =1.508+2.22 Δx eV at 4 K, where Δx=(0.52−x), the deviation of x from the lattice‐matched value.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.60.Hk Cathodoluminescence, ionoluminescence
78.40.Fy Semiconductors

Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

A. S. H. Liao, B. Tell, R. F. Leheny, T. Y. Chang, E. A. Caridi, E. Beebe, and J. C. DeWinter

Appl. Phys. Lett. 44, 344 (1984); http://dx.doi.org/10.1063/1.94753 (2 pages)

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In this letter we report the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide metal‐oxide‐semiconductor structure. Our results show that these electrons have a low field mobility which varies from 3000 to 4500 cm2/Vs, compared with 1500 cm2/Vs measured in field‐effect transistor structures. We also deduce a surface state density NSS =1.5×1013 cm−2 eV−1 near the conduction‐band edge.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement

T. J. Donahue, W. R. Burger, and R. Reif

Appl. Phys. Lett. 44, 346 (1984); http://dx.doi.org/10.1063/1.94754 (3 pages) | Cited 18 times

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Specular epitaxial silicon films have been deposited at 775 °C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This is the lowest silicon epitaxial deposition temperature reported for thermally driven chemical vapor deposition. It was found that the predeposition in situ cleaning of the surface, rather than any plasma effects during the deposition, was essential for achieving epitaxial growth at this low temperature. Surface cleaning in these experiments was done by sputtering the wafer in an argon plasma at 775 °C with a dc bias applied to the susceptor. This is the lowest pre‐epitaxial cleaning temperature reported for thermally driven chemical vapor deposition.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Direct heterodyne detection of 245‐GHz radiation using the internal narrowband oscillations of a resistive dc SQUID

J. M. V. Verschueren, A. A. Uiterwaal, R. W. van der Heijden, and P. Wyder

Appl. Phys. Lett. 44, 349 (1984); http://dx.doi.org/10.1063/1.94724 (3 pages)

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A current controlled voltage across a resistive section in a double Josephson junction interferometer (dc resistive superconducting quantum interference device) maintains a difference voltage between the junctions to generate a narrowband oscillatory signal at the beat frequency νq of the individual junction frequencies. This internal oscillation was used to directly down‐convert a signal at 246 GHz to a very low (<1 MHz) intermediate frequency.
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85.25.-j Superconducting devices
29.40.-n Radiation detectors

Ion beam milling of InP with an Ar/O2‐gas mixture

W. Katzschner, A. Steckenborn, R. Löffler, and N. Grote

Appl. Phys. Lett. 44, 352 (1984); http://dx.doi.org/10.1063/1.94725 (3 pages) | Cited 14 times

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Ion beam etching has been successfully applied to InP using an Ar/O2‐gas mixture. Varying angles of beam incidence resulted in different shapes of the etched profiles with the achievement even of undercutting. Good selectivity with respect to Novolak‐type photoresists prevails at higher accelerating voltages.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.82.-m Integrated optics
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