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15 Feb 1984

Volume 44, Issue 4, pp. 357-469

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Mode‐locked picosecond pulse generation from high power phase‐locked GaAs laser arrays

J. P. van der Ziel, H. Temkin, R. D. Dupuis, and R. M. Mikulyak

Appl. Phys. Lett. 44, 357 (1984); http://dx.doi.org/10.1063/1.94774 (3 pages) | Cited 11 times

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A diffraction‐coupled laser array has been actively mode locked in an external cavity to yield Gaussian pulses as short a 61‐ps full width at half‐maximum with a peak power of 1.1 W and an average power of 0.07 W. The array consists of 10 lasers, each 3 μm wide with 9‐μm center to center spacing. It emits with a stable double‐lobed far‐field pattern characteristic of the out‐of‐phase coupling between neighboring lasers. These arrays may be useful where high peak as well as high average optical powers are required.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Use of a diode laser to observe room‐temperature, low‐power optical bistability in a GaAs‐AlGaAs etalon

S. S. Tarng, H. M. Gibbs, J. L. Jewell, N. Peyghambarian, A. C. Gossard, T. Venkatesan, and W. Wiegmann

Appl. Phys. Lett. 44, 360 (1984); http://dx.doi.org/10.1063/1.94775 (2 pages) | Cited 13 times

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Optical bistability is observed using a single‐mode diode laser in a GaAs‐AlGaAs multiple‐quantum‐well etalon with as low as six mW power at 830 nm.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.60.-v Laser optical systems: design and operation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

CO2 laser using electrochemical transformation of organic compounds

K. Midorikawa, H. Tashiro, and S. Namba

Appl. Phys. Lett. 44, 361 (1984); http://dx.doi.org/10.1063/1.94776 (3 pages) | Cited 1 time

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A novel CO2 laser using electrochemical transformation of organic compounds (ECTO) has been developed. cw CO2 laser action was obtained by applying an electric discharge to the air, which contained organic vapors such as alcohols and benzene derivatives. The CO2 molecules produced by the chemical reaction in the laser tube and the N2 molecules contained in the air were excited by the discharge. The ECTO CO2 laser produced an output power of 7 W, which was comparable to the power obtained from a conventional CO2 laser gas mixture.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
78.60.Ps Chemiluminescence

Optical bistability at the band gap in InAs

C. D. Poole and E. Garmire

Appl. Phys. Lett. 44, 363 (1984); http://dx.doi.org/10.1063/1.94777 (3 pages) | Cited 21 times

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Observation of optical bistability at the band gap in InAs is reported. Clear hysteresis was seen in the reflected signal from a Fabry–Perot etalon consisting of polished n‐type InAs with silver deposited on the back surface. By using the 3.096‐μm line of an HF laser, which matches the band gap at 77 K, bistable switching was achieved with power levels as low as 3 mW (peak intensity 75 W/cm2).
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42.65.-k Nonlinear optics
85.60.-q Optoelectronic devices
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Phase locking of adjacent channel leaky waveguide CO2 lasers

D. G. Youmans

Appl. Phys. Lett. 44, 365 (1984); http://dx.doi.org/10.1063/1.94778 (3 pages) | Cited 21 times

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Phase locking has been achieved between two adjacent waveguide CO2 lasers separated by a thin plate of ZnSe. Radiation leakage from one waveguide to the other through the ZnSe causes the phase locking, and stationary interference fringes demonstrate the relative phase stability. Both waveguide lasers are excited by dc discharges and operate on one of several P or R transitions in the 10.4‐μm band. Phase locking occurs whenever both waveguides are on the same transition. An n by m array of such phase‐locked lasers has the potential of nearly an (n×m)2 increase in the peak of the lasers’ far‐field irradiance distribution.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Gn Optical waveguides and couplers
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Continuous operation of monolithic dynamic‐single‐mode coupled‐cavity lasers

L. A. Coldren, K. J. Ebeling, J. A. Rentschler, C. A. Burrus, and D. P. Wilt

Appl. Phys. Lett. 44, 368 (1984); http://dx.doi.org/10.1063/1.94771 (3 pages) | Cited 2 times

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The first cw monolithic two‐section lasers were fabricated using reactive‐ion‐etched grooves in buried‐crescent wafers. Tunable single‐mode selection with spurious mode levels down ∼20 dB was demonstrated under modulation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics

Temperature dependence of the threshold current of an InGaAsP laser under 130‐ps electrical pulse pumping

Pao‐Lo Liu, J. P. Heritage, and O. E. Martinez

Appl. Phys. Lett. 44, 370 (1984); http://dx.doi.org/10.1063/1.94772 (3 pages) | Cited 5 times

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We have measured the temperature dependence of the threshold current of an InGaAsP injection laser pumped by 130‐ps electrical pulses. By comparing the data with the empirical rule Ith=I0 exp(T/T0), we have observed a T0 of 148 K. The results indicate that we can partially separate carrier depletion processes, e.g., spontaneous radiative, Auger, or other nonradiative recombination, and carrier leakage from the fast stimulated emission process, hence, eliminate their effect on the temperature stability of the threshold current.
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42.55.Px Semiconductor lasers; laser diodes

High efficiency coupling to the overcoated surface plasmon mode in the far infrared

R. J. Seymour, J. J. Krupczak, and G. I. Stegeman

Appl. Phys. Lett. 44, 373 (1984); http://dx.doi.org/10.1063/1.94773 (3 pages) | Cited 6 times

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Trapezoidal gratings, both with and without thin dielectric overcoatings, have been used to couple up to 70% of a 119‐μm laser beam into surface plasmons on a metal surface. The results indicate significant grating induced shifts in the dispersion relations.
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79.20.Ds Laser-beam impact phenomena
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.79.Dj Gratings
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Spectral bistability in coupled cavity semiconductor lasers

N. A. Olsson, W. T. Tsang, R. A. Logan, I. P. Kaminow, and J‐S. Ko

Appl. Phys. Lett. 44, 375 (1984); http://dx.doi.org/10.1063/1.94779 (3 pages) | Cited 7 times

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Bistability in the spectral output of a two‐section cleaved‐coupled‐cavity (C3) semiconductor laser is observed. A wide (10 mA) and temperature insensitive hysteresis loop is obtained at laser currents up to at least 3×Ith and the laser can be switched with subnanosecond electrical pulses between its two spectraly pure states. The switching is characterized by a power‐delay product of 4×10−12 J and a switching time of less than 1 ns.
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42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Operation of cleaved‐coupled‐cavity Pb‐salt diode lasers in the 4–5‐μm spectral region

Kurt J. Linden and Robert E. Reeder

Appl. Phys. Lett. 44, 377 (1984); http://dx.doi.org/10.1063/1.94780 (3 pages) | Cited 3 times

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We have demonstrated operation of a cleaved‐coupled‐cavity (C3) diode laser of PbS1−xSex in the 4–5‐μm infrared spectral region. It was possible to obtain improved laser mode control by adjusting the modulator section current. Reproducible single mode operation with 1.5 mW of cw output power at 175 mA of laser current (power efficiency of 3.5%) was observed. A single mode tuning range of 2.16 cm−1 was obtained at a lower power value. Laser frequency tuning rates were found to be significantly reduced by use of modulator current tuning as opposed to laser current tuning. The observed results suggest that the C3 Pb‐salt laser may provide a much greater degree of mode control than has been possible with single‐cavity lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.60.-q Optoelectronic devices
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Line‐tunable oscillation of a cw NH3 laser from 10.7 to 13.3 μm

C. Rolland, J. Reid, and B. K. Garside

Appl. Phys. Lett. 44, 380 (1984); http://dx.doi.org/10.1063/1.94781 (3 pages) | Cited 17 times

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A cw CO2 laser operating on the R(30) 9‐μm transition is down shifted by 180 MHz in a pair of acousto‐optic modulators, and used to optically pump sR(5,0) transition of NH3 at line center. Vibrational inversion is created in the ν2 mode, and cw oscillation is observed on 20 different NH3 lines, spanning the region between 10.7 and 13.3 μm. Single line output powers as high as 760 mW were measured in a waveguide cavity. The operation of this laser is explained using a simple thermalization model, and several potential applications are discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Parametric generation of tunable picosecond pulses in the medium infrared using AgGaS2 crystals

T. Elsaesser, A. Seilmeier, W. Kaiser, P. Koidl, and G. Brandt

Appl. Phys. Lett. 44, 383 (1984); http://dx.doi.org/10.1063/1.94782 (3 pages) | Cited 36 times

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Infrared pulses were generated over the range from 1.2 to 10 μm in a single path system consisting of two AgGaS2 crystals. A high photon conversion efficiency between 10−1 and 10−3 was found depending upon the emission frequency. A bandwidth of approximately 10 cm−1 for idler pulses between 6 and 10 μm was observed. With a Nd:yttrium aluminum garnet laser pump of 20‐ps pulse duration one observes parametric pulses of 8 ps.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Transverse acceleration of electrons using laser or maser drivers

Neil C. Schoen

Appl. Phys. Lett. 44, 386 (1984); http://dx.doi.org/10.1063/1.94783 (3 pages)

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The utilization of coherent traveling electromagnetic waves to accelerate charged particles has been investigated. In the visible frequency region, electrons can be accelerated to energies in the range of 0.1 GeV within distances of 100 μm for electric fields of 6×1013 V/m. The Rayleigh region of a near diffraction limited laser beam provides the high power densities and proper ‘‘turn‐off’’ to accelerate electrons. The use of masers as drivers for this process is also shown to produce comparable levels of acceleration.
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41.60.-m Radiation by moving charges
41.75.Fr Electron and positron beams
07.77.-n Atomic, molecular, and charged-particle sources and detectors
42.62.-b Laser applications

Coupling mechanism of gain‐guided integrated semiconductor laser arrays

E. Kapon, C. Lindsey, J. Katz, S. Margalit, and A. Yariv

Appl. Phys. Lett. 44, 389 (1984); http://dx.doi.org/10.1063/1.94784 (3 pages) | Cited 16 times

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It is shown that a gain‐guided laser array couples via propagating fields rather than the evanescent mode coupling typically responsible for directional coupling in passive (directional couplers) and active (laser array) devices. We show that these phase‐locked modes exhibit an interference pattern, in the junction plane, which arises from the curvature of the phase fronts of optical fields of the interacting lasers. The experimental results are interpreted with the aid of a simple theoretical model, and the effect of the observed mode pattern on the coupling of gain‐guided lasers is discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Gn Optical waveguides and couplers

Characterization of surface defects using a pulsed acoustic laser probe

R. L. Jungerman, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 44, 392 (1984); http://dx.doi.org/10.1063/1.94785 (2 pages) | Cited 5 times

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A pulsed acoustic laser probe is used to measure vertical acoustic displacements in the near field of surface defects. A method of optically determining acoustic reflection coefficients in the time domain is presented. The spatial variation of acoustic displacements over a slot is modeled with a static theory. This theory estimates a depth of 230 μm for a 250‐μm‐deep slot. A near field image of a fatigue crack demonstrates an application of the technique.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
42.81.-i Fiber optics
43.40.Cw Vibrations of strings, rods, and beams
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Interaction of a modulated intense relativistic electron beam with a cavity

M. Friedman and V. Serlin

Appl. Phys. Lett. 44, 394 (1984); http://dx.doi.org/10.1063/1.94786 (2 pages) | Cited 4 times

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The mutual interaction between intense relativistic electron bunches and a cavity was investigated. It was found that this interaction generated an oscilating voltage in the cavity with an amplitude and a phase that depended on (1) the frequency of the modulated electron beam, (2) the characteristic frequency of the cavity, (3) the characteristic impedance of the cavity, and (4) peak beam current. This voltage caused energy exchange between electrons within a bunch resulting in modifications of the shape and peak current of the bunches. For a ‘‘critical’’ cavity geometry the voltage increased to a high amplitude, drastically reducing beam peak and average currents.
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52.75.Di Ion and plasma propulsion
41.75.Fr Electron and positron beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
29.20.-c Accelerators

Characteristics of a microwave plasma disk ion source

Jes Asmussen and Joseph Root

Appl. Phys. Lett. 44, 396 (1984); http://dx.doi.org/10.1063/1.94787 (3 pages) | Cited 13 times

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This letter describes an ion source using a cylindrical microwave cavity operating in a hybrid mode associated with the TE211 empty cavity mode. The design principles and associated electrical systems are also discussed. Extracted beam current versus accelerating voltage, and specific energy versus extracted beam current are displayed over the range of flow rates 20–80 sccm and absorbed powers 80–150 W. The results show the feasibility of this concept. The ion source has many potential uses such as space propulsion, material processing, and neutral beam ion sources.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.75.-d Plasma devices

Absolutely uniform illumination of laser fusion pellets

Andrew J. Schmitt

Appl. Phys. Lett. 44, 399 (1984); http://dx.doi.org/10.1063/1.94788 (3 pages) | Cited 23 times

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Absolutely uniform illumination of spherical laser fusion pellets is possible when the energy deposition from a single beam is given by a simple cos2 θ distribution. Conditions can be derived for which the laser beam targeting angles allow this absolute illumination uniformity. Configurations based upon the cube and higher order Platonic solids satisfy the constraints, as well as an infinite class of other less symmetric configurations.
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42.15.Eq Optical system design
28.52.-s Fusion reactors

Electric field induced morphological changes in nylon 11

E. W. Jacobs and J. C. Hicks

Appl. Phys. Lett. 44, 402 (1984); http://dx.doi.org/10.1063/1.94789 (2 pages) | Cited 4 times

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Electric field induced changes in the x‐ray diffraction pattern of nylon 11 films containing a mixture of the alpha and gamma crystal phases are presented. These changes indicate an orientation of crystallites such that dipoles are aligned in the direction of the poling field. Correlation between this crystal orientation and piezoelectric activity was observed.
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77.65.-j Piezoelectricity and electromechanical effects
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.41.+e Polymers, elastomers, and plastics
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Channeling in low energy boron ion implantation

A. E. Michel, R. H. Kastl, S. R. Mader, B. J. Masters, and J. A. Gardner

Appl. Phys. Lett. 44, 404 (1984); http://dx.doi.org/10.1063/1.94790 (3 pages) | Cited 36 times

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The effects of both planar and axial channeling on the profile of 5‐keV boron ions implanted into (100) oriented silicon wafers are demonstrated. A tilt angle of 12° from the (100) axis in a ‘‘random’’ crystallographic direction is required to minimize the (100) axial channeling tail. It is also shown that the effect of channeling along 100 planar channels produces a negligible addition to the channeling tail, whereas channeling along the (110) planar channels produces a measurable contribution. Implantation through a thin, 8‐nm, thermally grown silicon dioxide layer with the ion beam aligned along the (100) direction produces an ion profile comparable to an offset of 9° in a random direction.
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61.72.U- Doping and impurity implantation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Phase relations in the Cu, In, Se system and the properties of CuInSe2 single crystals

K. J. Bachmann, M. Fearheiley, Y. H. Shing, and N. Tran

Appl. Phys. Lett. 44, 407 (1984); http://dx.doi.org/10.1063/1.94791 (3 pages) | Cited 29 times

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Experimental data on the phase relations in the Cu, In, Se system are presented and the growth of single crystals of CuInSe2 from the melt is described. Hall measurements on both n‐ and p‐type crystals reveal that impurity conduction dominates the low‐temperature transport properties. Type conversion by annealing of initially n‐type crystals in excess selenium vapor leads to a substantial increase in the compensation level.
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64.70.D- Solid-liquid transitions
81.10.Fq Growth from melts; zone melting and refining
72.80.Jc Other crystalline inorganic semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Improvement of crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs by heat treatment

Shintaro Miyazawa, Takashi Honda, Yasunobu Ishii, and Satoru Ishida

Appl. Phys. Lett. 44, 410 (1984); http://dx.doi.org/10.1063/1.94792 (3 pages) | Cited 41 times

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Crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs (100) wafers were evidently improved by annealing at 800 °C for more than 12 h. The improvement was confirmed by observing cathodoluminescence intensity line scanning profile and by measuring field‐effect transistor (FET) threshold voltage standard deviation σVth. σVth for 14‐h and 18‐h annealed/polished wafers exhibited about one‐half that for a nonannealed wafer. Direct evidence of the improvement was also obtained by measuring dislocation effect on FET threshold voltage.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.50.Nw Crystal stoichiometry
78.60.Hk Cathodoluminescence, ionoluminescence
85.30.Tv Field effect devices

Bias effects on the deposition of hydrogenated amorphous silicon film in a glow discharge

K. Ando, M. Aozasa, and R. G. Pyon

Appl. Phys. Lett. 44, 413 (1984); http://dx.doi.org/10.1063/1.94793 (3 pages) | Cited 12 times

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Bias effects on the deposition of hydrogenated amorphous silicon (a‐Si:H) film in the glow discharge were investigated by triode system which can control the negative bias without changing the other deposition conditions. The growth rate, H content, and photoconductivity of the film deposited at the substrate temperature 300–320 °C increased with the negatively enhanced bias. The results would be due to the enhancement of  ion flow by the bias and show that the bias has an advantage for the improvement of the a‐Si:H film characteristics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.80.Hc Glow; corona
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids

Gap states in silicon nitride

John Robertson and Martin J. Powell

Appl. Phys. Lett. 44, 415 (1984); http://dx.doi.org/10.1063/1.94794 (3 pages) | Cited 181 times

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The energy levels of defect states in amorphous silicon nitride have been calculated and the results are used to identify the nature of trap states responsible for charge trapping during transport and the charge storage leading to memory action. We argue that the Si dangling bond is the memory trap in chemical vapor deposited memory devices and is also the center in plasma‐deposited nitride responsible for hopping at low electric fields and for charge‐trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
71.20.-b Electron density of states and band structure of crystalline solids
73.61.Ng Insulators

Determination of SiO2 trapped charge distribution by capacitance‐voltage analysis of undoped polycrystalline silicon‐oxide‐silicon capacitors

Y. Nissan‐Cohen, J. Shappir, and D. Frohman‐Bentchkowsky

Appl. Phys. Lett. 44, 417 (1984); http://dx.doi.org/10.1063/1.94795 (3 pages) | Cited 16 times

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Capacitance measurements on undoped polycrystalline silicon gate capacitors are used for oxide trapping characterization. In this structure, a field‐effect modulation on both interfaces is observed in a single C‐V plot. A variation in the insulator charge state is detected by its effect on both interfaces. The main advantage of this method is that both trapped charge magnitude and centroid are obtained by a single measurement with a minimal disturbance of the charge distribution. The method is demonstrated on thin oxide capacitors subjected to negative or positive charge trapping. The induced positive and negative charge magnitude and location dependence on the injection conditions are measured and analyzed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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