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15 Feb 1984

Volume 44, Issue 4, pp. 357-469

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Influence of as‐deposited film structure on 〈100〉 texture in laser‐recrystallized silicon on fused quartz

Masakazu Kimura and Koji Egami

Appl. Phys. Lett. 44, 420 (1984); http://dx.doi.org/10.1063/1.94770 (3 pages) | Cited 15 times

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A strong 〈100〉 texture has been achieved in cw neodymium:yttrium aluminum garnet laser recrystallization of the 700 °C low pressure chemical vapor deposited (LPCVD) polycrystalline silicon films which exhibit 〈100〉 preferred orientation. When 〈110〉 texture is dominant in as‐deposited films, the 〈100〉 texture is not so strong as in the 700 °C LPCVD films. The dependence of the 〈100〉 texture on as‐deposited film structure implies that the 〈100〉 grain growth occurs under such a melting condition as the initial film structure is partially maintained.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.-v Laser optical systems: design and operation

Open‐tube isothermal vapor phase epitaxy of Hg1−xCdxTe on CdTe

S. H. Shin and J. G. Pasko

Appl. Phys. Lett. 44, 423 (1984); http://dx.doi.org/10.1063/1.94796 (3 pages) | Cited 15 times

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Device‐quality Hg1−xCdxTe (0.2≤x≤0.35) epitaxial layers have been grown on CdTe substrates by open‐tube isothermal vapor phase epitaxy (ISOVPE). The surface morphology of the layers is mirrorlike, and the Hall data are comparable to those for HgCdTe grown by liquid phase epitaxy (LPE). Photovoltaic devices with a cutoff wavelength of 4.1 μm at 77 K were fabricated on an ISOVPE HgCdTe epilayer. Their performance is comparable with those that we have obtained for such devices fabricated on LPE HgCdTe epilayers.
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68.55.-a Thin film structure and morphology
85.60.Dw Photodiodes; phototransistors; photoresistors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Hydrogen diffusion along passivated grain boundaries in silicon ribbon

C. Dubé, J. I. Hanoka, and D. B. Sandstrom

Appl. Phys. Lett. 44, 425 (1984); http://dx.doi.org/10.1063/1.94797 (3 pages) | Cited 33 times

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Using the electron beam induced current mode of the scanning electron microscope, a technique has been developed to study the extent of hydrogen passivation and diffusion along grain boundaries in silicon ribbon grown by the edge‐defined film‐fed growth process. Passivation and diffusion depths x, ranging from a few microns to more than 200 microns have been found. Grain boundary diffusivities of 10−8–10−9 cm2/s have been measured. A finite width to the spatial distribution of recombination centers along the grain boundaries has been found and measurements of the surface recombination velocity S, indicate that, for S≥2×104 cm/s, ln S∝x.
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66.30.J- Diffusion of impurities
81.65.-b Surface treatments
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Mm Grain and twin boundaries

Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures

K. Meehan, J. M. Brown, M. D. Camras, N. Holonyak, R. D. Burnham, T. L. Paoli, and W. Streifer

Appl. Phys. Lett. 44, 428 (1984); http://dx.doi.org/10.1063/1.94798 (3 pages) | Cited 10 times

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Transmission electron microscopy and photoluminescence data are used to show that a single GaAs quantum well (Lz ≊70 Å) confined by Alx′Ga1−x′As (x′∼0.3) layers can, via low‐temperature (600 °C) Zn diffusion, be interdiffused (‘‘absorbed’’) into the confining layers (impurity‐assisted Al‐Ga interdiffusion) and be shifted to higher gap (x=0→x′∼0.3) without damaging the crystal or ruining its capability to operate as a continuous 300‐K low threshold photopumped laser.
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66.30.J- Diffusion of impurities
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.55.Px Semiconductor lasers; laser diodes
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Raman spectroscopy of PtSi formation at the Pt/Si(100) interface

J. C. Tsang, Y. Yokota, R. Matz, and G. Rubloff

Appl. Phys. Lett. 44, 430 (1984); http://dx.doi.org/10.1063/1.94755 (3 pages) | Cited 16 times

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We demonstrate the use of Raman spectroscopy with a multichannel detector to characterize the growth of PtSi on Si(100). The vibrational modes of surface silicide layers as thin as 10 Å and PtSi layers less than 40 Å thick buried under 140 Å of Pt have been observed without the need for any special sample geometry for signal enhancement. The Raman spectra can identify the silicide layer, estimate its thickness, and demonstrate its crystalline quality. This can be done on an arbitrary substrate, in air and without any special sample preparation.
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78.30.Er Solid metals and alloys
68.35.Ja Surface and interface dynamics and vibrations
68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Minority‐carrier injection annealing of electron irradiation‐induced defects in InP solar cells

M. Yamaguchi, K. Ando, A. Yamamoto, and C. Uemura

Appl. Phys. Lett. 44, 432 (1984); http://dx.doi.org/10.1063/1.94756 (3 pages) | Cited 24 times

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The first observation of minority‐carrier injection annealing of radiation‐induced defects in InP is reported. Minority‐carrier injection due to both forward bias application and light illumination at room temperature after electron irradiation is shown to enhance defect annealing in p‐InP and to result in the recovery of InP solar cell properties. These results suggest that most InP‐based devices under minority‐carrier injection mode operation conditions are more radiation resistant than any other material‐based devices.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Fe Electron and positron radiation effects
84.60.Jt Photoelectric conversion

Improved GaAs/AlGaAs single quantum wells through the use of thin superlattice buffers

W. T. Masselink, M. V. Klein, Y. L. Sun, Y. C. Chang, R. Fischer, T. J. Drummond, and H. Morkoç

Appl. Phys. Lett. 44, 435 (1984); http://dx.doi.org/10.1063/1.94757 (3 pages) | Cited 24 times

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In general, single GaAs quantum wells surrounded by AlxGa1−xAs cladding layers show only weak photoluminescence corresponding to exciton recombination. This is attributed to the poor quality of the AlGaAs in the lower cladding layer resulting in a degraded interface and poor GaAs in the quantum well. The situation gets worse when the thickness of the bottom AlGaAs layer is increased, the GaAs thickness is reduced, or the Al mole fraction is increased. Using a graded three‐period superlattice ahead of the quantum well causes the intensity of the photoluminescence associated with exciton recombination to increase to more than 160 times that associated with the conventional structure. This exciton recombination peak is due to either very shallow bound or free‐electron recombination and has a full width at half‐maximum of only 2 meV.
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78.55.-m Photoluminescence, properties and materials
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.35.-y Excitons and related phenomena

Beryllium implantation doping of InGaAs

B. Tell, R. F. Leheny, A. S. H. Liao, T. J. Bridges, E. G. Burkhardt, T. Y. Chang, and E. D. Beebe

Appl. Phys. Lett. 44, 438 (1984); http://dx.doi.org/10.1063/1.94758 (3 pages) | Cited 14 times

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Ion implantation doping of Be acceptors in n‐In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is achieved with rapid (30 s) thermal anneals compared to conventional 15‐min furnace anneals, resulting in p‐n junction depths less than 1 μm with peak acceptor concentrations greater than 1018 cm−3. Electrical profiles and p‐n junction characteristics are presented.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Nitrogen in silicon: Towards the identification of the 1.1223‐eV (A,B,C) photoluminescence lines

R. Sauer, J. Weber, and W. Zulehner

Appl. Phys. Lett. 44, 440 (1984); http://dx.doi.org/10.1063/1.94759 (3 pages) | Cited 17 times

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We show that the ‘‘new’’ photoluminescence line in silicon at 1.1223 eV which was recently reported and ascribed to a nitrogen complex is identical with the A line of the isoelectronic A, B, C exciton system as previously studied. New data are presented which confirm that nitrogen is incorporated in the optical center. Further defect constituents cannot be identified on the basis of the present data.
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78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena
78.30.-j Infrared and Raman spectra

Anodic sulfide films on Hg1−xCdxTe

Y. Nemirovsky and L. Burstein

Appl. Phys. Lett. 44, 443 (1984); http://dx.doi.org/10.1063/1.94760 (2 pages) | Cited 27 times

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A novel anodic sulfidization process for forming native sulfide films on Hg1−xCdxTe is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native homogeneous CdS films are formed with an abrupt interfacial transition. The measured capacitance‐voltage characteristics of metal‐insulator‐semiconductor devices indicate that the films have a low negative fixed surface charge density of the order of –1×1011 e cm−2 and a relatively low concentration of fast surface charge density. The native sulfide films leave the surface of p‐type Hg1−xCdxTe practically at flat band and in this respect are superior to native oxide films which invert the surface of p‐type material. The new surface passivation is in particular suitable for photovoltaic diodes implemented on p‐type Hg1−xCdxTe.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.-z Semiconductor devices

Solid phase epitaxy of silicon on gallium phosphide

T. de Jong, F. W. Saris, Y. Tamminga, and J. Haisma

Appl. Phys. Lett. 44, 445 (1984); http://dx.doi.org/10.1063/1.94761 (2 pages) | Cited 7 times

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Epitaxial silicon films have been grown on gallium phosphide by molecular beam and solid phase epitaxy or combinations of both methods. During molecular beam epitaxial growth Ga segregates on top of the Si films, which can be considerably reduced by solid phase epitaxy but not completely suppressed. The cause of segregation is investigated using Rutherford backscattering, defect etching, and scanning electron microscopic inspection. We conclude that imperfections in the epitaxial layer act as diffusion pipes for atoms.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
64.75.-g Phase equilibria

Photoinduced quenching of infrared absorption nonuniformities of large diameter GaAs crystals

M. S. Skolnick, L. J. Reed, and A. D. Pitt

Appl. Phys. Lett. 44, 447 (1984); http://dx.doi.org/10.1063/1.94762 (3 pages) | Cited 26 times

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Low‐temperature quenching of inhomogeneities in two‐dimensional infrared images of large diameter liquid encapsulated Czochralski (LEC) crystals of semi‐insulating GaAs is reported. The temperature and wavelength dependence of the ‘‘fatiguing’’ phenomena have the same characteristics as those reported for the deep donor EL2. These results demonstrate in a clear way that the dominant nonuniformities of the infrared (0.7–1.4 eV) transmission of LEC GaAs are due to fluctuations in the concentration of neutral EL2. In the quenched state, weak nonuniformities with reverse contrast to EL2 still remain. These may be due to a photoelastic effect in the strain fields of dislocations, or to the presence of another center whose spatial fluctuations are the reverse of those of EL2.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.J- Point defects and defect clusters
78.30.Hv Other nonmetallic inorganics

High quantum efficiency amorphous silicon photodetectors with picosecond response times

A. M. Johnson, A. M. Glass, D. H. Olson, W. M. Simpson, and J. P. Harbison

Appl. Phys. Lett. 44, 450 (1984); http://dx.doi.org/10.1063/1.94763 (3 pages) | Cited 6 times

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Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling oscilloscope limited response times of 40 ps (full width at half‐maximum) have been fabricated. Utilizing ultrathin films of rf glow discharge deposited hydrogenated amorphous silicon, carrier sweep‐out was achieved in a new microstrip transmission line structure. The performance of these devices, for picosecond pulse detection, is now comparable to that of crystalline semiconductor detectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors

S. M. Goodnick, T. Hwang, and C. W. Wilmsen

Appl. Phys. Lett. 44, 453 (1984); http://dx.doi.org/10.1063/1.94764 (3 pages) | Cited 15 times

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The drift in channel current of SiO2/InP metal‐insulator‐semiconductor field‐effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In2O3 within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO2/InP interface.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling

Sensitive reflection high‐energy electron diffraction measurement of the local misorientation of vicinal GaAs surfaces

P. R. Pukite, J. M. Van Hove, and P. I. Cohen

Appl. Phys. Lett. 44, 456 (1984); http://dx.doi.org/10.1063/1.94765 (3 pages) | Cited 15 times

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Reflection high‐energy electron diffraction (RHEED) is used to determine the local misorientation of vicinal, molecular beam epitaxy prepared GaAs surfaces. With the glancing angle of incidence fixed, the intensity along the (00) streak is measured for different crystal azimuths. The specular beam is observed to split by an amount that depends upon the scattering geometry and surface misorientation. The method is applied to surfaces misoriented with respect to low‐index bulk planes by an average polar angle of 2°, 1°, and 5 mrad. Local polar and azimuthal misorientations were determined to within 5% and 10°, respectively. The measurement shows that an important mechanism responsible for RHEED streaks is diffraction from ordered staircase steps.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon

C. Carter, W. Maszara, D. K. Sadana, G. A. Rozgonyi, J. Liu, and J. Wortman

Appl. Phys. Lett. 44, 459 (1984); http://dx.doi.org/10.1063/1.94766 (3 pages) | Cited 54 times

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Shallow BF2 and B implants (42 keV, 2×1015 cm−2) were conducted at either liquid nitrogen or room temperature into deeply preamorphized (100) Si. Cross‐sectional transmission electron microscopy revealed that subsequent rapid thermal annealing (RTA) of the room‐temperature implanted BF2 sample in the temperature range 950–1150 °C for 10 s created three classes of secondary defects at three different depth levels. The depths corresponded closely to the projected range of the BF2 implant, the deep amorphous/crystalline interface, and the region immediately below the interface. In contrast, RTA of preamorphized Si with or without the shallow B implant both resulted in a high perfection surface region with secondary defects only in the region below the deep amorphous/crystalline interface. A phenomenological model for nucleation of the separate layers of defects is presented.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
71.55.Jv Disordered structures; amorphous and glassy solids
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Inhibition of acid etching of Pt by pre‐exposure to oxygen plasma

M. J. Kim, L. A. Gruenke, R. J. Saia, and S. S. Cohen

Appl. Phys. Lett. 44, 462 (1984); http://dx.doi.org/10.1063/1.94767 (3 pages) | Cited 3 times

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Platinum etching characteristics in aqua regia have been studied. It was found that prior exposure to an oxygen plasma inhibits the dissolution of platinum in aqua regia. Oxygen, far more abundant in the exposed platinum than in the unexposed platinum, plays a key role in forming an inhibition layer, such as PtO2, which prevents chlorine ion attack. This inhibition layer appears to retard platinum etching effectively in chlorine‐based etch solutions. The layer has been observed to form at a fast rate, and it is insensitive to the oxygen partial pressure in the plasma chamber. The insoluble characteristics of both the inhibited platinum and the platinum silicide in aqua regia make it feasible to form an unframed contact interconnection for applications of very large scale integration.
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81.05.Bx Metals, semimetals, and alloys
81.15.Cd Deposition by sputtering

IV curves of long annular Josephson junctions

A. Davidson and N. F. Pedersen

Appl. Phys. Lett. 44, 465 (1984); http://dx.doi.org/10.1063/1.94768 (3 pages) | Cited 14 times

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IV curves of long annular Josephson junctions (circumference much larger than the Josephson penetration depth) have been investigated numerically. It is concluded that an experiment on such a system is preferable to the usual linear geometries and will allow a study both of the undisturbed motion of a fluxon, and the fluxon‐antifluxon collision process. The simulations show that the fluxon‐antifluxon collisions generate long wavelength plasma oscillations which may give rise to fine structure in the IV curves.
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74.50.+r Tunneling phenomena; Josephson effects

High resolution electron beam lithography on CaF2

P. M. Mankiewich, H. G. Craighead, T. R. Harrison, and A. H. Dayem

Appl. Phys. Lett. 44, 468 (1984); http://dx.doi.org/10.1063/1.94769 (2 pages) | Cited 23 times

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We have fabricated 30‐nm lines on 200‐nm centers in CaF2 using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF2 film and reaction to CaO followed by development in H2O.
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81.65.-b Surface treatments
41.75.Fr Electron and positron beams
82.50.-m Photochemistry
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