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1 Mar 1984

Volume 44, Issue 5, pp. 473-567

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Schottky barrier restricted arrays of phase‐coupled AlGaAs quantum well lasers

H. Temkin, R. D. Dupuis, R. A. Logan, and J. P. van der Ziel

Appl. Phys. Lett. 44, 473 (1984); http://dx.doi.org/10.1063/1.94822 (3 pages) | Cited 14 times

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Simple, self‐aligned phase‐coupled laser arrays consisting of ten 3‐μm‐wide stripes are described. The current flow was confined to the stripes by a Schottky barrier over the remainder of the laser chip. This process, applied to the AlGaAs graded‐index structures grown by metalorganic vapor phase epitaxy, produced arrays with threshold currents as low as 20 mA/stripe. The devices are capable of output powers of up to 1 W/facet and operate at temperatures as high as 100 °C with a stable far‐field pattern. In addition, novel information on the phase coupling in these gain‐guided arrays has been obtained.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure

S. D. Hersee, B. de Cremoux, and J. P. Duchemin

Appl. Phys. Lett. 44, 476 (1984); http://dx.doi.org/10.1063/1.94823 (3 pages) | Cited 33 times

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We describe the characteristics of graded‐index separate‐confinement heterostructure (GRIN‐SCH) quantum well laser structures for a wide range of quantum well thickness and graded layer composition. It was deduced that the ‘‘GRIN’’ region enhances carrier confinement and assists the thermalization of carriers into the quantum well. A maximum value of T0 of 190 K was measured for these single quantum well lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.50.-p Quantum optics
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Coupled parallel waveguide semiconductor laser

S. Mukai, E. Kapon, J. Katz, C. Lindsey, Z. Rav‐Noy, S. Margalit, and A. Yariv

Appl. Phys. Lett. 44, 478 (1984); http://dx.doi.org/10.1063/1.94824 (3 pages) | Cited 1 time

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The operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated. One of the cavities (‘‘control’’ cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser. With a minor modification, the same device can operate as an independent two‐wavelength laser source.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Measurements of intensity fluctuations of an InGaAsP external cavity laser

Pao‐Lo Liu, G. Eisenstein, R. S. Tucker, and I. P. Kaminow

Appl. Phys. Lett. 44, 481 (1984); http://dx.doi.org/10.1063/1.94825 (3 pages) | Cited 4 times

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We have measured the statistical distributions of intensity fluctuations in an external cavity semiconductor laser. The cavity was formed by coupling a 6.8‐cm‐long multimode fiber to an antireflection coated, 10‐μm‐wide InGaAsP ridge‐waveguide laser. The fluctuations of the intensity of the laser are small when the cavity is adjusted for single‐longitudinal‐mode operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Improved linearity and kink criteria for 1.3‐μm InGaAsP‐InP channeled substrate buried heterostructure lasers

N. K. Dutta, D. P. Wilt, P. Besomi, W. C. Dautremont‐Smith, P. D. Wright, and R. J. Nelson

Appl. Phys. Lett. 44, 483 (1984); http://dx.doi.org/10.1063/1.94826 (3 pages) | Cited 5 times

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Nonlinearities or kinks in the light‐current characteristics of channeled substrate buried heterostructure lasers are associated with higher order transverse mode transition and lateral mode movement. The active area has been reduced to stabilize the transverse mode. Fundamental mode operation up to high powers (24 mW/facet) has been obtained in devices with threshold current as low as 15 mA. Measurements and calculations are presented which show that nonlinearities occur at higher output power in lasers with reduced active area.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Microwave integrated optical modulator

Peter S. Cross, Richard A. Baumgartner, and Brian H. Kolner

Appl. Phys. Lett. 44, 486 (1984); http://dx.doi.org/10.1063/1.94806 (3 pages) | Cited 9 times

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A Ti‐diffused lithium niobate, traveling wave modulator has been fabricated and tested at microwave frequencies. A Mach–Zehnder interferometer optical configuration and a coplanar waveguide electrical transmission line are used. For a 4‐mm interaction length, the modulator has a 3‐dB bandwidth of 13 GHz and requires only 2 V to switch at λ=840 nm. The frequency response is measured directly using an ultrahigh speed photodiode, and the test setup therefore constitutes the highest bandwidth efficient electro‐optical transmission system ever reported.
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42.79.Hp Optical processors, correlators, and modulators
42.60.Fc Modulation, tuning, and mode locking
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Consequences of a lower level population on the modeling of a homogeneously broadened injection laser

Daniel T. Cassidy

Appl. Phys. Lett. 44, 489 (1984); http://dx.doi.org/10.1063/1.94807 (3 pages) | Cited 5 times

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An exact, analytic solution has been found for the coupled, nonlinear differential equations which describe the amplification of mode intensities for propagation through a homogeneously broadened amplifier with negligible population in the lower level. It is shown in this letter that the predictions of an analytic laser model based on the solutions to these equations can be scaled in a straight forward and easy manner to include the effects of a constant, lower level population.
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42.55.Px Semiconductor lasers; laser diodes
63.10.+a General theory

Raman scattering spectrum analyses for fluorine‐doped silica optical fibers

Kazuhiro Noguchi, Yasuji Murakami, Naoshi Uesugi, and Koushi Ishihara

Appl. Phys. Lett. 44, 491 (1984); http://dx.doi.org/10.1063/1.94808 (3 pages) | Cited 12 times

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Raman scattering spectra for fluorine‐doped silica fibers are measured. A Raman scattering peak, assigned to be the Si–F bond in the fibers, is observed at a wave number of 930 cm−1. Heat tests in a hydrogen gas atmosphere are carried out. The result shows that the fiber loss due to the hydroxyl group, which is produced by the heat test, decreases by fluorine doping. These phenomena show that the Si–O–Si bond defects are filled with doped fluorine atoms, and oxygen atoms positioned at the defects are exchanged by the fluorine atoms.
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78.30.Hv Other nonmetallic inorganics
42.81.-i Fiber optics
42.25.Lc Birefringence
81.05.Kf Glasses (including metallic glasses)

Hot‐electron energy deposition profiles in CO2 laser target interaction: A comparison between Kα and continuum measurements

J. C. Kieffer, H. Pépin, and F. Amiranoff

Appl. Phys. Lett. 44, 494 (1984); http://dx.doi.org/10.1063/1.94809 (3 pages) | Cited 8 times

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In CO2 laser target interaction, the axial and lateral hot‐electron energy deposition profiles are determined from Kα emission and compared with those inferred from hard x‐ray continuum spectra, in the same experimental conditions. The two approaches are complementary and give the same results provided that the continuum and the Kα are produced by a similar electron distribution.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Fi Transport properties

Novel x‐ray backlighting method for measuring areal densities of Rayleigh–Taylor unstable, ablatively driven targets

J. Grun and S. Kacenjar

Appl. Phys. Lett. 44, 497 (1984); http://dx.doi.org/10.1063/1.94810 (3 pages) | Cited 4 times

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We describe a face‐on x‐ray backlighting method that does not require a dedicated laser beam and a separate x‐ray source. This method is used to measure the lateral mass transfer characteristic of the Rayleigh–Taylor instability in ablatively accelerated, laser driven targets.
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47.20.-k Flow instabilities
52.70.-m Plasma diagnostic techniques and instrumentation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Fi Transport properties

Transport properties of composites having the CsCl structure

R. C. McPhedran

Appl. Phys. Lett. 44, 500 (1984); http://dx.doi.org/10.1063/1.94811 (3 pages) | Cited 4 times

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A formulation is presented for the problem of calculating the effective transport coefficient of a three‐phase composite material, having two phases of spherical inclusions arranged in the CsCl structure in a matrix material. A formula is given for the effective transport coefficient ϵ taking into account dipole and octupole terms in multipole field expansions. The flexibility of the formula in modelling the behavior of ϵ over a wide range of volume fractions is demonstrated.
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72.10.Bg General formulation of transport theory
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
77.22.Ch Permittivity (dielectric function)

Electron beam cutting in amorphous alumina sheets

M. E. Mochel, J. A. Eades, M. Metzger, J. I. Meyer, and J. M. Mochel

Appl. Phys. Lett. 44, 502 (1984); http://dx.doi.org/10.1063/1.94812 (3 pages) | Cited 11 times

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We have found that nanometer diameter holes and slots can be cut in thin sheets of amorphous alumina using an intense electron beam. The holes, formed by a nonthermal process, are uniform in diameter, are surrounded by metallic aluminum, and can penetrate a 100‐nm sheet in a few seconds. The amorphous alumina sheets are formed by anodization of electropolished high purity aluminum. The electron beam cutting seems very similar to the process reported in the metal β‐aluminas. Since uniform, stable, and easily handled sheets of amorphous alumina can be fabricated and electron beam cut, this process is now practical for nanolithography as well as many other applications.
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61.80.Fe Electron and positron radiation effects
79.20.Kz Other electron-impact emission phenomena
81.05.Bx Metals, semimetals, and alloys
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Location of Te in epitaxially regrown Si layers

I. Dézsi, M. Van Rossum, G. Langouche, R. Coussement, D. Schroyen, and M. F. Wu

Appl. Phys. Lett. 44, 505 (1984); http://dx.doi.org/10.1063/1.94813 (3 pages) | Cited 2 times

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Single crystal of Si was implanted with 125mTe along (100) direction with a dose of 2×1015 atoms/cm2. The epitaxial regrowth was studied by Mössbauer spectroscopy. The symmetry around the Te atoms was found to be lower than cubic after oven annealing.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
76.80.+y Mössbauer effect; other γ-ray spectroscopy
78.40.Fy Semiconductors

High‐quality single GaAs quantum wells grown by metalorganic chemical vapor deposition

R. C. Miller, R. D. Dupuis, and P. M. Petroff

Appl. Phys. Lett. 44, 508 (1984); http://dx.doi.org/10.1063/1.94814 (3 pages) | Cited 19 times

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GaAs‐AlxGa1−xAs single and multiquantum well structures grown by metalorganic chemical vapor deposition have been examined for the first time in detail using low‐temperature photoluminescence, cathodoluminescence, and transmission electron microscopy. The better heterointerfaces are very uniform with a large scale roughness of approximately plus or minus a monolayer along the interface on a scale of the exciton diameter or larger and a composition gradient width of less than three monolayers across the interface. The GaAs well interface roughness and associated impurity luminescence are not very sensitive to the thickness of the AlxGa1−xAs prelayer. With nonoptimum growth conditions, the quantum well photoluminescence characteristics suggest a substantial amount of band filling due to holes presumably from the AlxGa1−xAs layers.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors

Stability of NiSi2 and CoSi2 in contact with their free metal

E. C. Cahoon, C. M. Comrie, and R. Pretorius

Appl. Phys. Lett. 44, 511 (1984); http://dx.doi.org/10.1063/1.94815 (3 pages) | Cited 10 times

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Rutherford backscattering has been used to study metal/disilicide thin‐film interactions for Ni and Co. Upon heating, the metal reacted with disilicide to produce the phase M2Si in both cases. On further heating the M2Si itself reacted with the disilicide to form MSi. In the case of Co it was found that after all the metal had been converted to CoSi in this way, the reaction stopped. However, with Ni the disilicide substrate continued to dissociate into NiSi and Si even after all the original Ni had reacted to form NiSi. The stability of NiSi2 under various conditions was investigated and it appears that twin requirements of a crystalline silicon substrate on which the excess Si can regrow and nucleation sites in the form of NiSi are necessary in order to induce dissociation.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
66.30.Fq Self-diffusion in metals, semimetals, and alloys
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Infrared spectrum of interstitial oxygen in silicon

Michael Stavola

Appl. Phys. Lett. 44, 514 (1984); http://dx.doi.org/10.1063/1.94816 (3 pages) | Cited 45 times

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A stress‐induced dichroism study of the 1106‐cm−1 and 515‐cm−1 modes of interstitial oxygen in silicon has been undertaken in order to assign the 515‐cm−1 mode. It has been found that the 515‐cm−1 mode is due to the symmetric stretching motion of the Si–O–Si ‘‘defect molecule’’ that has often been used to explain the vibrational spectrum of interstitial oxygen. The implications of the assignment to both the structure of the oxygen interstitial and to the characterization of oxygen concentration are discussed.
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78.30.Hv Other nonmetallic inorganics
78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
61.72.jd Vacancies
61.72.jj Interstitials

Spectroscopic ellipsometric and He backscattering analyses of crystalline Si‐SiO2 mixtures grown by molecular beam epitaxy

T. J. Maloney, D. E. Aspnes, H. Arwin, and T. W. Sigmon

Appl. Phys. Lett. 44, 517 (1984); http://dx.doi.org/10.1063/1.94817 (3 pages) | Cited 12 times

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Single‐crystal layers of silicon oxide (SiOz) grown on crystalline Si (c‐Si) substrates by molecular beam epitaxy have been analyzed by spectroscopic ellipsometry (SE) and 2.2‐MeV He backscattering. The optical properties of SiOz clearly indicate that it is a phase‐separated mixture of c‐Si and SiO2. Backscattering data combined with the SE results show that SiOz consists of 43 vol. % c‐Si, 43 vol. % voids, and 14 vol. % SiO2. The results suggest that registry is preserved by the c‐Si inclusions, which also act as nucleation sites for subsequently grown epitaxial c‐Si films. The tendency of SiOz to oxidize rapidly at high temperature suggests that it may be useful for dielectrically isolating epitaxial c‐Si films.
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68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
07.60.Fs Polarimeters and ellipsometers
68.60.-p Physical properties of thin films, nonelectronic

Spatially resolved observation of carrier leakage in 1.3‐μm In1−xGaxAsyP1−y lasers

Liang‐Hui Chen, J. C. V. Mattos, F. C. Prince, and N. B. Patel

Appl. Phys. Lett. 44, 520 (1984); http://dx.doi.org/10.1063/1.94818 (3 pages) | Cited 6 times

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We report spatially resolved observation of carrier leakage over heterobarriers between a thin InGaAsP active layer (eg∼0.9 eV) and symmetric InGaAsP confining layers (Eg∼1.28 eV), in a double‐heterostructure laser. Peaks of short wavelength emission of about 1 μm were found to originate from the confining layers indicating that significant carrier leakage, not only of electrons but also of holes can occur. Additional experimental observations suggest that the surprising observation of significant hole leakage may be due to the existence of hot holes created by Auger and/or intervalence band absorption processes.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Polarization hysteresis in dielectric films using light diffraction by acoustic waves

Alfred E. Attard and John F. Kuehls

Appl. Phys. Lett. 44, 522 (1984); http://dx.doi.org/10.1063/1.94819 (3 pages) | Cited 3 times

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A new method for determining polarization hysteresis in dielectric films is described. The technique is capable of determining the type of polarization as well as the relaxation time. Results are described for Mylar.
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77.55.-g Dielectric thin films
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
77.22.Ej Polarization and depolarization
78.20.Jq Electro-optical effects

‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si

A. Addamiano and J. A. Sprague

Appl. Phys. Lett. 44, 525 (1984); http://dx.doi.org/10.1063/1.94820 (3 pages) | Cited 84 times

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The nature of the buffer layers needed for the single crystal deposition of cubic SiC on Si substrates was studied. It is concluded that the buffer layer is a stressed monocrystalline layer of cubic SiC.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

SiOxNy capped annealing for Si‐implanted GaAs

M. Kuzuhara and H. Kohzu

Appl. Phys. Lett. 44, 527 (1984); http://dx.doi.org/10.1063/1.94821 (3 pages) | Cited 22 times

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Si‐implanted GaAs was successfully annealed with silicon oxynitride (SiOxNy) encapsulant. By using SiOxNy encapsulant with about 1.75 refractive index, a maximum electrical activation of 87%, which is 30–50% higher than that obtained after SiO2 or Si3N4 capped annealing, was achieved on Si‐implanted GaAs (5×1012 cm−2, 100 keV). In addition, electrical activation after SiOxNy capped annealing remains constant against the variation of film thickness up to 2300 Å, indicating minimized interfacial stress between SiOxNy film and GaAs substrate. A maximum carrier concentration of 2.5×1018 cm−3, which is the highest value ever reported on Si‐implanted GaAs, was obtained after SiOxNy capped annealing for 7×1013 cm−2 dose. The controlled amount of Ga outdiffusion in combination with the reduced interfacial stress is considered to be responsible for this high electrical activation.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Characterization of laser annealed InP with ellipsometry and Hall effect measurement

R. Fremunt, Y. Hirayama, F. Arai, and T. Sugano

Appl. Phys. Lett. 44, 530 (1984); http://dx.doi.org/10.1063/1.94827 (3 pages) | Cited 3 times

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Indium phosphide layers into which sulphur ions were implanted at room temperature in the dose range of 5×1013–1×1015 cm−2 were annealed with continuous wave (cw) Nd:yttrium aluminum garnet (YAG) laser beam in double scan with the power density from 1.8 to 5.4×104 W cm−2 at a dwell time of 3.6 ms. Following annealing the samples were characterized by ellipsometry and the electrical activity of implanted ions was assessed by Van der Pauw type Hall measurements. At high doses, electrical activity over 20% and electron mobility of about 1500 cm2/V s were obtained, but electrical properties were poor at low doses. It is assumed that the effect of activated impurities is compensated by defects, which were induced by cw Nd:YAG laser annealing, to a large extent.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
07.60.Fs Polarimeters and ellipsometers
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena

Inelastic tunneling characteristics of AlAs/GaAs heterojunctions

R. T. Collins, J. Lambe, T. C. McGill, and R. D. Burnham

Appl. Phys. Lett. 44, 532 (1984); http://dx.doi.org/10.1063/1.94828 (3 pages) | Cited 23 times

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We report the first observation of inelastic tunneling in electronic transport perpendicular to a thin AlAs layer sandwiched between two GaAs layers. Temperature dependent I–V, first derivative (dI/dV), and second derivative (d2I/dV2) measurements were made on AlAs/GaAs double heterojunctions for a range of AlAs layer thicknesses and dopings. For p‐type AlAs barriers current transport at 4.2 K was due to tunneling, and reproducible structure was seen in the second derivative spectrum. This structure was associated with the inelastic excitation of AlAs optical phonons and with a density‐of‐states effect caused by optical phonon‐electron coupling in the GaAs. A different second derivative spectrum which also exhibited reproducible structure was obtained for n‐type AlAs layers. Several possible explanations for these differences are proposed.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Raman microprobe determination of local crystal orientation in laser annealed silicon

J. B. Hopkins, L. A. Farrow, and G. J. Fisanick

Appl. Phys. Lett. 44, 535 (1984); http://dx.doi.org/10.1063/1.94829 (3 pages) | Cited 13 times

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In this letter we discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, nondestructive analysis of the local crystal orientation of a polycrystalline silicon sample grown over SiO2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane, as well as the degree of tipping of the crystal plane away from the plane of the Si substrate.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
78.30.Hv Other nonmetallic inorganics
81.10.Bk Growth from vapor
63.20.-e Phonons in crystal lattices

Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cells

Brian W. Faughnan and Richard S. Crandall

Appl. Phys. Lett. 44, 537 (1984); http://dx.doi.org/10.1063/1.94830 (3 pages) | Cited 26 times

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Using a carrier collection length lc, defined for penetrating light, a convenient technique for measuring lc, in pin cells is demonstrated. We show experimentally that lc, predicts the fill factor measured with white light under AM1 conditions for a wide variety of pin cells. A simple model is presented which fits the experimental results. The implications of these results on the carrier collection loss for strongly absorbed light are discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
75.20.Ck Nonmetals
84.60.Jt Photoelectric conversion
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